CN105226128B - 光感测组件及其制造方法 - Google Patents

光感测组件及其制造方法 Download PDF

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CN105226128B
CN105226128B CN201410621543.5A CN201410621543A CN105226128B CN 105226128 B CN105226128 B CN 105226128B CN 201410621543 A CN201410621543 A CN 201410621543A CN 105226128 B CN105226128 B CN 105226128B
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徐永珍
廖伟杰
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Wispro Technology Consulting Corp Ltd
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Abstract

一种光感测组件的改良结构，包含在一半导体基板上设置两端式双极性光敏晶体管，该两端式双极性光敏晶体管具有基极、集极与射极端点。透过金属导线或者离子掺杂形成电性传导区域连接基板和该两端式光敏晶体管基极，以导引基板照光后产生的光电流至基极端点，用以增加两端式光敏晶体管组件光感测能力。

Description

光感测组件及其制造方法
技术领域
本发明涉及一种半导体装置及其制作方法，尤其有关于光感测半导体组件及其制造方法。
背景技术
在光感测组件领域中，光敏晶体管可以设计成二端式或者三端式组件。当组件设计成三端式组件时，虽然可以获得较高的光电流增益，但三端式组件也具有较大的稳态电流，容易造成组件漏电流增加与静态功率损害的问题。此外，若想从三端式光敏晶体管的总电流中萃取所需的光电流亦需要额外的技术设计，因此造成诸多不便。然而，对于一个两端式光敏晶体管而言，由于其基极通常处于浮接的状态，虽然可以有效的降低组件漏电流，但同时也降低了光电流增益。综合上述，目前光敏晶体管仍面临许多亟需改善的问题。
发明内容
有鉴于此，有必要提供一种光传感器。
一种光感测组件结构，形成于一基板上，包含:至少一个光敏晶体管设置于该基板上，该光敏晶体管具有一基极区域；及一电性传导区，其改良在于该电性传导区电性连结该基板与该光敏晶体管的基极区域。
一种光感测组件结构的制造方法，包含形成至少一个光敏晶体管于该光感测组件结构的步骤:
提供一P型传导半导体基板；
形成一N型传导内埋区域于该P型传导半导体基板；
形成一N型传导磊晶区域邻近于该N型传导内埋区域；
形成一P型传导基极邻近于该N型传导磊晶区域；
形成一射极区域覆盖部分该P型传导基极；以及
形成一电性传导区电性连结该P型传导基极与该P型传导半导体基板。
一种光感测组件结构的制造方法，包含形成至少一个光敏晶体管于该光感测组件结构上的步骤：
提供一P型传导基板；
形成一N型传导区域于该P型传导基板上；
形成一P型传导区域邻近于该N型传导区域；
掺杂部分该P型传导区域形成至少一个集极和至少一个射极区域；
形成一N型通道金氧半场效晶体管于该P型传导区域上；以及
形成一电性传导区电性连接该P型传导区域与该P型传导基板。
一种光敏组件，包含：
一第一传导类型的基板；
一第二传导类型的内埋层，设置于该基板上；以及
至少一个光敏晶体管设置于该基板上，该光敏晶体管包含一第一传导类型的基极；
其中，一电性传导区电性连结该第一传导类型基板与该光敏晶体管的第一传导类型基极。
一种半导体组件，包含：
一基板；以及
一两端式光敏晶体管，该两端式光敏晶体管具有一基极；
其中，一电性传导区电性连结该基板与该两端式光敏晶体管的基极。
附图说明
图1是本发明第一实施例的光感测组件结构的上视图。
图2是本发明的图1光感测组件结构沿着A-A’线段的剖面图。
图3A是本发明一实施例光敏组件，具有基板与基极形成一电性连结的示意图。
图3B是本发明另一实施例光敏组件，具有基板与基极形成一电性连结的示意图。
图4是本发明一实施例光感测组件结构上光敏晶体管，于不同光照射强度下产生的光电流图。
图5是本发明硅锗双极互补式金氧半异质接面光敏晶体管，在基板与基极具有及未具有电性连接的光频谱响应图。
图6是本发明硅锗双极互补式金氧半异质接面光敏晶体管，在具有基板与基极电性连接情况，其集极与基板电流的频谱响应图。
图7是本发明一实施例光感测组件结构上的互补式金氧半光敏晶体管，在具有金属材料或离子掺杂形成一电性传导区域电性连接基板与基极的横切面图。
图8A是本发明的另一实施例的光敏组件，透过一金属联机形成基板与基极电性连接的电路图。
图8B是本发明的另一实施例的光敏组件，具有一离子掺杂形成基板与基极电性连接的电路图。
图9是本发明一实施例硅锗双极互补式金氧半异质接面光敏晶体管，具有延伸基极，以此形成基板与基极连结的上视图。
图10是本发明一实施例互补式金氧半光敏晶体管，具有N型场效晶体管以及具有利用金属导线形成基板与基极相连结的的上视图。
图11是本发明图10沿着B-B’线段的剖面图。
图12是本发明一实施例互补式金氧半光敏晶体管，具有N型场效晶体管以及具有基板与基极相连结的上视图。
图13是本发明图12沿着C-C’线段的横切面图。
图14是本发明一实施例影像感测单元由光敏晶体管组成的结构示意图。
图15是本发明一实施例影像感测模块由光敏晶体管组成的方块图。
图16是本发明一实施例图像处理系统由光敏晶体管组成的方块图。
图17是本发明一实施例的光电感测组件结构上光敏晶体管制造流程图。
图18是本发明另一实施例的光电感测组件结构上光敏晶体管制造流程图。
主要元件符号说明
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
本发明的构思可以利用不同形式的实施例表示，说明书所示附图与文中说明为本发明的一实施范例，并非意图将本发明限制于所示附图及/或所描述的特定实施例中。
本发明第一实施例的光感测组件结构1可参阅图1，图1是该光感测组件结构1组件的上视图，该组件长度和宽度皆为60微米。其中，该光感测组件结构1通过堆栈不同的结构层，在该光感测组件结构1上形成一个或多个标准硅锗异质接面双极性光敏晶体管，该光敏晶体管结构层可区分为一基板区域3(简称基板)、一集极区域20(简称集极)，一基极区域25(简称基极)，以及覆盖部分基极区域25的射极区域12(简称射极)。
图2是本发明第一实施例的光感测组件结构1沿着图1A-A’切线的剖面图，图2的编号若与图1相近，代表相类似的组成元素。图2所示的基板3是P型传导半导体，该基板3内包含一N型传导半导体内埋层22；设置于邻近该N型传导半导体内埋层22的区域为一N型传导半导体的磊晶层24，该N型传导内埋层22通常具有1019/cm3-1021/cm3左右的离子掺杂浓度，其离子掺杂浓度一般高于于该N型传导磊晶层24；设置于邻近该N型传导磊晶层的区域为一N型传导的集极区域20，该N型传导集极区域20通常亦具有比该N型传导磊晶层24较高的离子掺杂浓度；设置于邻近该N型传导磊晶层24的区域为一P型传导半导体层，为该光敏晶体管的基极区域25。
请参阅图2，该光感测组件结构具有一离子重掺杂区域15，设置于该晶体管的基板区域3上，以降低端点电阻值，并且设置多个场氧化层(FOX)14于该离子重掺杂区域15和集极区域20之间，以此形成电性绝缘。该射极区域12由N型传导的多晶硅材料所组成，相较于该N型传导磊晶层具有较高的离子掺杂浓度，该N型传导射极区域12同时覆盖部分P型传导基极区域25。另外，该光感测组件结构上设置多个金属接触端10于该重掺杂区域15、集极区域20、基极区域25以及射极区域12之上，以此形成组件金属接触，以降低传导电阻。其中，该离子重掺杂区域15的金属接触端10通过一金属导线5所形成的电性传导区域电性连接至该基极区域25。
图3A和B是本发明第一实施例光敏组件的电路结构图，如图3A和B所示，该光敏组件具有基极50、集极55、射极60以及P型基板56等组成单元。图3A表现本发明一实施例的一个构向，该基极50利用一金属导线70形成电性传导区电性连结至该P型基板56；图3B表现另一种构向，该基极50利用一离子重掺杂区域80形成一电性传导区电性连结该P型基板56。
图4是本发明第一实施例光感测组件结构1的光电流对光照射强度的对应图，当该光感测组件结构1在施加一较小的偏压(VCE＝1.2V)情况下，传统结构的光感测组件结构，具有长宽皆为60微米的组件尺寸，其基板与基极并未形成任何电性传导区域，该结构已具有可观察的集极输出电流，当输入光照射功率在一个宽广的动态范围下(涵盖120dB)，该光电流对光照射强度的关系呈现相当线性的行为。请参阅图4，当光照射强度低至0.01流明，其光输出电流仍有1.7奈安培，相当于电流密度为每平方公分47.2微安培，相同组件与光照射强度下，侦测到的暗电流仅为1.7微微安培，该传统光感测组件结构的讯号对噪声比在0.01流明的光照射强度下可保持为60dB。
另外，本发明第一实施例中硅锗异质接面光敏晶体管，其特征在于具有一电性传导区域电性连接该光敏晶体管的基极与该基板。图4为此光感测组件结构对于多种入射光线强度所侦测到的光感应电流，相较于传统组件的光感测组件结构，其光敏晶体管的基极与基板并未具有一电性传导区域形成一电性连结，具有一百倍以上的光电流增强效果，在入射光强度为0.01流明的环境下，侦测到的光感应电流可达到0.2微安培，验证本发明的光感测组件结构的基极若与基板若形成一电性传导区域，提供两者形成一电性连结，可以有效的增加该组件的光感应能力。另外，在相同入射光强度为0.01流明的环境下，在相同的外在施加偏压下(VCE＝1.2V)，该组件的暗电流仅为18微微安培，等同于每平方公分0.5微安培的电流密度。当一硅锗异质接面光敏晶体管具有一基极与基板电性传导区域形成电性连接的结构，相较于传统结构光感测组件结构的讯号对噪声比，在0.01流明的光照射下，可以有效的从60dB提升至80dB。
请参照第5图，本发明第一实施例中，光感测组件结构上的硅锗异质接面光敏晶体管(HPT)处于不同入射光波长的情况下，所产生的光响应度散布图。图5上有三条曲线分别代表具有传统结构的硅锗异质接面光敏晶体管组件的集极电流(HPT_IC)和射极(HPT_IE)电流，详细电流值请参照图5中右侧刻度，以及具有基极与基板电性传导区域形成电性连接的硅锗异质接面光敏晶体管组件的光电流(HPT_I)，详细电流值请参照图5中左侧刻度。该传统结构的硅锗异质接面光敏晶体管，其光敏晶体管的基极与基板并未形成一电行传导区域造成电性连接，当组件施加偏压VCE为1.2V，入射波光长为630奈米的情况下，该组件的集极电流具有一峰值，该峰值在630奈米入射光下，每瓦的入射功率可以产生3.7安培的光电流。由于一般光感测组件结构都具有一N型传导的内埋层，该N型传导内埋层与P型传导的基板形成一额外的寄生PN接面，可以用于接收入射光，以产生额外的集极电流，该额外的集极电流虽然不能通过二端式异质接面光敏晶体管产生电流放大的效果，但会随着入射光的波长增加而增加，其原因在于此寄生PN接面的空乏区相当宽广以及基板厚度相当的厚，因此在长波长的入射光照射下，组件所产生的集极电流的值通常会大于射极电流值。
请参照图5，本发明一具体实施例中硅锗异质接面光敏晶体管，处于不同入射光波长的情况下，对应产生的光响应度散布图。其中，当传统结构硅锗异质接面光敏晶体管，处于较短波长的入射波长光照射环境下，组件的射极与集极的光响应度曲线大致上重迭，且集极电流略大于射极电流，但随着入射光波长增加，集极与射极的光响应度曲线逐渐的分开不重迭，但仍保持集极电流大于射极电流的关系。由于光传感器组件结构的基板在长波长的入射光照射情况下，相较于短波长入射光照射可以产生较多的电洞，且在一硅锗异质接面光敏晶体管组件其基极与基板形成一电性传导区域的组件中，基板照射长波长光后所产生的电洞可以被导引到基极端形成光电流输出，因此该组件光响应度的峰值会落在较长波长的入射光位置，同时光响应度的峰值会相较于传统结构的组件高。请参照图5，在每瓦入射光能量照射下，一硅锗异质接面光敏晶体管具有其基极与基板形成一电性传导区域产生电性连接的结构，其组件光响应峰值可以高达75安培。
请参照图6是本发明一具体实施例中硅锗异质接面光敏晶体管的光响应度散布图。该硅锗异质接面光敏晶体管组件(HPT)具有其基极与基板形成一电性传导区域产生电性连接的结构，该组件的集极电流(Ic)和基板电流(Isub)与总集极电流(Ic+Isub)分别标示于图6的不同曲线中。请参照图6，该硅锗异质接面光敏晶体管的基板电流Isub(电洞为主)，相较于该组件集极电流Ic的峰值，位处在较长波长的位置。上述结果与具有基板与基极电性连结的硅锗异质接面光敏晶体管所量测到的光响应度结果一致，代表基板通过长波长入射光照射下所产生的载子可以提供基板一额外的光电流产生，进而增加组件输出电流。
图7是本发明另一实施例的光传感器组件结构的剖面图，该光感测组件结构包含一个以上具有互补式金属氧化物半导体(CMOS)结构的光敏晶体管2，该CMOS光敏晶体管2可与一般业界标准半导体制程兼容，该CMOS光敏晶体管2具有一横向NPN双极性接面晶体管的结构，包含一N型传导射极区域122、一P型传导基极区域250和一N型传导集极区域200。该CMOS光敏晶体管2设置于一P型传导半导体井22上，该P型传导半导体井222与一P型传导基板30，通过一设置于两者间的N型传导半导体层220形成电性隔绝。其中，本发明特征在于将该P型传导基极区域250与该P型传导基板30通过一电性传导区85产生一电性连结关系。
图8A-8B是一光敏组件电路图，该光敏组件具有一个以上的CMOS光敏晶体管2，该CMOS光敏晶体管2的电路结构具有一集极端点95、一射极端点90、一基极端点85，一基板端点96，当传统CMOS光敏晶体管操作于一般状态下，该基极端点96设计为一浮接状态，光电流讯号仅由集极端点95与射极端点90输出。请参阅图8A是本发明的一面向，由于该基板端点96与该基极端点85在一般操作状态下，并未存有任何电性连结的关系。通过设置一金属导线92于该光敏晶体管的基板端点96与基极端点85之间，形成一电性传导区域进而产生一电性连接关系，该金属导线92材料可为铝、铜、金、银、石墨烯、氧化铟锡(ITO)或相类似的电性良导体。参阅图8B是本发明的另一面向，该光敏晶体管的该基板端点96与基极端点85之间可透过一离子重掺杂方式，形成一电性传导区域80，进而产生一电性连结该基板端点96与该基极端点85。
图9是本发明另一实施例光感测组件结构4的上视图，该光感测组件结构4包含一个以上的光敏晶体管，该光敏晶体管具有一基板(图中未标示)、一集极区域110与一集极区域接触点115、一射极区域101与一射极区域接处点105以及一基极区域118。该基极区域118两侧利用离子重掺杂的方式往外延伸，越过该集极区域110通过一电性传导区域直接与基板相互连结，形成一电性连接路径。利用上述离子重掺杂的方式，延伸该基极区域118直接与基板形成电性接触，而不需要透过任何金属导线或接触孔的方式，可以有效的减少线电阻以及接触电阻。
参阅图10是本发明另一实施例光感测组件结构6的上视图，图11是本发明另一实施例光感测组件结构6于图10中沿着B-B’切线的剖面图。此实施例相似于图7所示的结构，不同之处在于此光感测组件结构利用一N型传导金属氧化物半导体(金氧半)场效晶体管130取代图7原先标示的场氧化层(FOX)，该金氧半场效晶体管130设置于一集极区域127与一射极区域125之间，使得该集极区域127与该射极区域125两者形成一电性隔离。该N型传导金氧半导体场效晶体管130的漏极区域与源极区域可以视为该光感测组件结构上一光敏晶体管的集极区域127与射极区域125，同时该N型传导金氧半场效晶体管130的通道宽度可以利用标准半导体制程中的最小信道长度规则进行制造，以减少该光敏晶体管的集极区域127与射极区域125之间的距离。请参阅图10，该光敏晶体管的基板区域30通过一金属导线50产生一电性传导区域产生电性连接至该晶体管的基极区域250。请参阅图11，该光敏晶体管操作在两端式光敏晶体管情况下，该N型传导金氧半场效晶体管130的闸极126原始情况是处于浮接的状态。另外该光敏晶体管的基极区域250与射极区域125通过场氧化层(FOX)形成电性隔绝。
参阅图12是本发明另一实施例光感测组件结构7的上视图，图13是本发明另一实施例光感测组件结构7于图12中沿着C-C’切线的剖面图。此实施例相似于图10与图11所示的结构，不同在于该光感测组件结构7上具有一个以上的光敏晶体管，该晶体管的基极区域123通过一离子重掺杂的方式，跨过一N型传导井220所形成的电性隔绝区域，形成一电性传导区域产生一电性连接路径至该晶体管的基板30。
请参阅图14是本发明另一实施例的影像感测像素的电路图，本发明所揭露的光感测组件结构上的光敏晶体管11，可以构成该影像感测像素51中的一个光感测单元，入射光线可以通过该光敏晶体管11侦测并转换成电讯号，产生电荷累积于该影像感测像素51的一浮接端点DR。该影像感测像素单元51具有一重置晶体管T1用于重置该浮接端点DR的累积电荷量，并且作为一个讯号参考值，该重置晶体管T1的闸极端连接到一个讯号重置线RSL，该讯号重置线RSL可提供讯号控制该重置晶体管M1进行讯号更新。该影像感测像素51包含一源极随偶器T2用于缓冲该影像感测像素51的输出讯号。该影像感测像素51包含一选择晶体管T3用于选择输出该影像感测像素51的讯号电压值Vout，该选择晶体管M3的闸极连接到一个讯号位线WDL进行讯号选择控制。
参阅图15是本发明另一实施例影像感测模块的结构图，该影像感测模块300包含由一光感测组件结构上多个光敏晶体管，该多个光敏晶体管形成多个影像感测像素51，该光敏晶体管可以排列成单行、单列、多行、多列或者矩阵的形式。请参阅图15，由该光敏晶体管排列成矩阵形式的一影像感测矩阵301可通过一电性连结至行译码器302、列译码器310、多功器315与模拟/数字转换器316，萃取每一影像感测像素51接收入射光后所产生的电讯号，接着进行后续的电讯号处理，而产生影像读取与转换的功能。请参阅图16是本发明另一实施例图像处理系统的方块图，其中该图像处理系统400包含一影像感测模块300，该影像感测模块300用以读取和处理每一影像感测像素的电讯号，接着透过该图像处理系统400的显示单元401将影像信息显示于用户知悉，或者将影像信息储存于该图像处理系统400的记忆模块402内。
请参阅图17是本发明的另一实施例制造光感测组件结构中的光敏晶体管方法的流程图，其中所列的步骤可以增加或减少，制程步骤的顺序也可以调换。首先，步骤S01提供一P型传导(p-type)的基板，步骤S02形成一N型传导(n-type well)内埋区域于该P型传导基板(p-type substrate)内，步骤S03形成一N型传导磊晶区(n-type epitaxy)于该N型传导内埋区(buried layer)上，步骤S04形成一P型传导基极区域于该N型传导磊晶区上，步骤S05形成一射极区域覆盖该P型传导基极区域，步骤S06该P型传导基极区域产生一电性传导区电性连结至该P型传导基板。
请参阅图18是本发明的另一实施例制造光感测组件结构中的光敏晶体管制造方法的流程图，所列的步骤可以额外增加或减少，制造步骤的顺序也可以调换。首先，步骤S10提供一P型传导的基板，步骤S11形成一N型传导井于该P型传导基板内，步骤S12形成一P型传导井于该N型传导井上，步骤S13在该P型传导井上通过掺杂的方式形成至少一个集极区域与至少一个射极区域，步骤S14在该P型传导井上形成至少一个N型传导通道金属氧化物半导体场效晶体管，步骤S15该P型传导井形成一电性传导区电性连结至该P型传导基板。
以上实施例仅用以说明本发明的技术方案而非限制，尽管参照较佳实施例对本发明进行了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或等同替换，而不脱离本发明技术方案的精神和范围。

Claims (25)

1.一种光感测组件结构，形成于一基板上，包含:至少一个光敏晶体管设置于该基板上，该光敏晶体管具有一基极区域；及一电性传导区，其特征在于,该电性传导区电性连结该基板与该光敏晶体管的基极区域；
其中，该电性传导区为一金属导线或该电性传导区为该基极区域两侧利用离子重掺杂方式向外延伸至该基板形成电性连接。
2.如权利要求1所述的光感测组件结构，其特征在于：其进一步包含设置一N型掺杂内埋层于该基板，其中该基板为P型传导体，该光敏晶体管设置于该N型掺杂内埋层上。
3.如权利要求2所述的光感测组件结构，其特征在于：其中该光敏晶体管包含：在该N型掺杂内埋层邻近区域设置N型传导磊晶层；在该N型传导磊晶层邻近区域设置P型传导体基极；于该P型传导体基极部分邻近区域设置N型传导体的射极。
4.如权利要求1所述的光感测组件结构，其特征在于：其进一步包含设置一N型传导区域于该基板，其中该基板为P型传导体，该至少一个光敏晶体管设置于该N型传导区域。
5.如权利要求4所述的光感测组件结构，其特征在于：其进一步包含一P型传导区域，设置于邻近该N型传导区域，其中该P型传导区域包含基极区域。
6.如权利要求5所述的光感测组件结构，其特征在于：其进一步包含一射极与集极于该P型传导区域，且该射极与该集极电性隔离，所述射极为一N型通道金氧半场效晶体管的源极，所述集极为所述N型通道金氧半场效晶体管的漏极。
7.如权利要求1所述的光感测组件结构，其特征在于：该至少一个光敏晶体管为多个，该多个光敏晶体管排列成一维形式。
8.如权利要求1所述的光感测组件结构，其特征在于：该至少一个光敏晶体管为多个，该多个光敏晶体管排列成二维形式。
9.如权利要求1所述的光感测组件结构，其特征在于：其中该光感测组件结构包含于一电子装置模块，该电子装置模块包含多个以二维矩阵形式排列的光敏晶体管、一多任务器单元和一译码单元，其中至少一个光敏晶体管电性连接到该多任务器单元或译码单元。
10.一种光感测组件结构的制造方法，包含形成至少一个光敏晶体管于该光感测组件结构的步骤:
提供一P型传导半导体基板；
形成一N型传导内埋区域于该P型传导半导体基板；
形成一N型传导磊晶区域邻近于该N型传导内埋区域；
形成一P型传导基极邻近于该N型传导磊晶区域；
形成一射极区域覆盖部分该P型传导基极；以及
形成一电性传导区电性连结该P型传导基极与该P型传导半导体基板；
其中，该电性传导区为一金属导线或该电性传导区为该基极区域两侧利用离子重掺杂方式向外延伸至该基板形成电性连接。
11.如权利要求10所述的光感测组件结构的制造方法，其特征在于：该至少一个光敏晶体管为多个，该多个光敏晶体管排列成一维形式。
12.如权利要求10所述的光感测组件结构的制造方法，其特征在于：该至少一个光敏晶体管为多个，该多个光敏晶体管排列成二维形式。
13.一种光感测组件结构的制造方法，包含形成至少一个光敏晶体管于该光感测组件结构上的步骤：
提供一P型传导基板；
形成一N型传导区域于该P型传导基板上；
形成一P型传导区域邻近于该N型传导区域，该P型传导区域包含基极区域；
掺杂部分该P型传导区域形成至少一个集极和至少一个射极区域；
形成一N型通道金氧半场效晶体管于该P型传导区域上；以及
形成一电性传导区电性连接该P型传导区域与该P型传导基板；
其中，该电性传导区为一金属导线或该电性传导区为该基极区域两侧利用离子重掺杂方式向外延伸至该基板形成电性连接。
14.如权利要求13所述的光感测组件结构的制造方法，其特征在于：该至少一个光敏晶体管为多个，该多个光敏晶体管排列成一维形式。
15.如权利要求13所述的光感测组件结构的制造方法，其特征在于：该至少一个光敏晶体管为多个，该多个光敏晶体管排列成二维形式。
16.一种光敏组件，包含：
一第一传导类型的基板；
一第二传导类型的内埋层，设置于该基板上；以及
至少一个光敏晶体管设置于该基板上，该光敏晶体管包含一第一传导类型的基极；
一电性传导区电性连结该第一传导类型基板与该光敏晶体管的第一传导类型基极；
其中，该电性传导区为一金属导线或该电性传导区为该基极区域两侧利用离子重掺杂方式向外延伸至该基板形成电性连接。
17.如权利要求16所述的光敏组件，其特征在于：该至少一个光敏晶体管为多个，该多个光敏晶体管排列成一维形式。
18.如权利要求16所述的光敏组件，其特征在于：该至少一个光敏晶体管为多个，该多个光敏晶体管排列成二维形式。
19.一种光敏组件，包含：
一第一传导类型的基板；
一第二传导类型的电性绝缘区域，设置于该第一传导类型基板上；以及
一个或多个光敏晶体管，设置于该第一传导类型基板上，该光敏晶体管具有包覆于该绝缘区域内的第一传导类型基极；
一电性传导区电性连结该第一传导类型基板与该光敏晶体管的第一传导类型基极；
其中，该电性传导区为一金属导线或该电性传导区为该基极区域两侧利用离子重掺杂方式向外延伸至该基板形成电性连接。
20.如权利要求19所述的光敏组件，其特征在于：该多个光敏晶体管排列成一维形式。
21.如权利要求19所述的光敏组件，其特征在于：该多个光敏晶体管排列成二维形式。
22.一种半导体组件，包含：
一基板；以及
一两端式光敏晶体管，该两端式光敏晶体管具有一基极；
一电性传导区电性连结该基板与该两端式光敏晶体管的基极；
其中，该电性传导区为一金属导线或该电性传导区为该基极区域两侧利用离子重掺杂方式向外延伸至该基板形成电性连接。
23.如权利要求22所述的半导体组件，其特征在于：其中该基板与该两端式光敏晶体管基极为浮接状态。
24.如权利要求22所述的半导体组件，其特征在于：其中该基板为一P型传导体，且该两端式光敏晶体管基极为一P型传导体。
25.如权利要求24所述的半导体组件，其特征在于：其中该基板与该两端式光敏晶体管的基极通过一N型传导区域形成电性隔绝。
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