JP5386764B2 - 光検出素子 - Google Patents
光検出素子 Download PDFInfo
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- JP5386764B2 JP5386764B2 JP2010532978A JP2010532978A JP5386764B2 JP 5386764 B2 JP5386764 B2 JP 5386764B2 JP 2010532978 A JP2010532978 A JP 2010532978A JP 2010532978 A JP2010532978 A JP 2010532978A JP 5386764 B2 JP5386764 B2 JP 5386764B2
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- 239000004065 semiconductor Substances 0.000 claims description 66
- 238000009792 diffusion process Methods 0.000 claims description 61
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- 240000002329 Inga feuillei Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
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- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
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- CBHCDHNUZWWAPP-UHFFFAOYSA-N pecazine Chemical compound C1N(C)CCCC1CN1C2=CC=CC=C2SC2=CC=CC=C21 CBHCDHNUZWWAPP-UHFFFAOYSA-N 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
Description
文献1:米国特許第4,904,608号公報
文献2:“Wide-Wavelength InGaAs/InP PIN Photodiodes Sensitive from 0.7 to 1.6μm”,Shuzo Kagawa他, Japanese Journal of Applied Physics 28(1989) pp.1843-1846.
文献3:米国特許第4,887,138号公報
文献4:特開昭62-141769号公報
文献5:特開昭62-141770号公報
文献6:特開昭61-280665号公報
文献7:特開昭62-139354号公報
文献8:“Characterization and Modeling of Three-Terminal Heterojunction Phototransistors Using and InGaP Layer for Passivation”,Shin-Wei Tan 他, IEEE Transactions on Electron Devices, Vol. 52, No.2, pp.204-210, February 2005.
文献9:“Hight gain and wide dynamic range puchthrough heterojunction phototransistors”,Y.Wang 他, J.Appl.Phys.74(11) pp.6987-6981,December 1993.
文献10:米国特許第7,067,853号公報
文献11:“Segregation of Zinc in InGaAs/InP Heterostructures During Diffusion: Experiment and Numerical Modeling”,F.Dildey 他, Japaniese Journal of Applied Physics vol.29, No.5 (1990) pp.810-812.
文献12:"Zn-Diffusion-Induced Disordering of InGaAs/AlGaInAs Multiple Quantum Well and Its Application to Long-wavelength Laser",K.Goto他. Japanese Journal of Applied Phys. Vol.33 (1994) pp.5774-5778
第一導電型の第一半導体層により構成されるコレクタ層と、その上に形成され、第一導電型とは逆極性の第二導電型の第二半導体層となるベース層と、第二半導体層の上に形成され、第二半導体層に比して相対的にワイドギャップな半導体から成る第一導電型の第三半導体層によるエミッタ層と、第一半導体層の下に設けられ、第一半導体層に比して相対的にワイドギャップな半導体から成る第一導電型のワイドギャップバッファ層と、このワイドギャップバッファ層の下に位置する基板とを含み;
積層関係にある第一、第二、第三半導体層はメサエッチングにより島状に切り出されたメサ構造であって、このメサ構造の側面は空間に露呈した露呈側面となっているヘテロ接合バイポーラフォトトランジスタ構造を有し;
当該メサ構造の露呈側面から素子の内部に向かって所定の横方向寸法分だけ、第二半導体層と同一導電型である上記第二導電型の半導体層に転換された、平面的に見るとリング状の拡散領域が設けられていると共に;
エミッタ層の上記基板主面と平行な表面にあって側面から素子内部に向かう表面部分にも、所定の横方向寸法分だけ、第二導電型の拡散領域が設けられ;
ワイドギャップバッファ層の基板主面と平行な表面部分にも、メサ構造に接する部分から横方向外方向に向かい、所定の横方向寸法分だけ、第二導電型の拡散領域が設けられていること;
を特徴とする光検出素子を提案する。
上記のエミッタ層の上にエミッタコンタクト層が設けられ;
エミッタ層にあってこのエミッタコンタクト層に触れずに平面的に見てエミッタコンタクト層の周囲に沿う部分には、周方向にリング状に閉じ、エミッタ層を上下に貫く追加の拡散領域が設けられていること;
を特徴とする光検出素子も提案する。
4 ベース層
5 第二メサ構造
6 拡散領域
7 メサ構造
10 コレクタ層
11 ワイドギャップバッファ層
12 基板
31,32 拡散領域
41 光吸収層(感光領域)
46,47 pn接合ないし表面領域
Claims (2)
- 第一導電型の第一半導体層により構成されるコレクタ層と、その上に形成され、該第一導電型とは逆極性の第二導電型の第二半導体層となるベース層と、該第二半導体層の上に形成され、該第二半導体層に比して相対的にワイドギャップな半導体から成る上記第一導電型の第三半導体層によるエミッタ層と、該第一半導体層の下に設けられ、該第一半導体層に比して相対的にワイドギャップな半導体から成る上記第一導電型のワイドギャップバッファ層と、該ワイドギャップバッファ層の下に位置する基板とを含み;
積層関係にある上記第一、第二、第三半導体層はメサエッチングにより島状に切り出されたメサ構造であって、該メサ構造の側面は空間に露呈した露呈側面となっているヘテロ接合バイポーラフォトトランジスタ構造を有し;
該メサ構造の上記露呈側面から素子の内部に向かって所定の横方向寸法分だけ、上記第二半導体層と同一導電型である上記第二導電型の半導体層に転換された、平面的に見るとリング状の拡散領域が設けられていると共に;
上記エミッタ層の上記基板主面と平行な表面にあって側面から素子内部に向かう表面部分にも、所定の横方向寸法分だけ、上記第二導電型の拡散領域が設けられ;
上記ワイドギャップバッファ層の基板主面と平行な表面部分にも、上記メサ構造に接する部分から横方向外方向に向かい、所定の横方向寸法分だけ、上記第二導電型の拡散領域が設けられていること;
を特徴とする光検出素子。 - 請求項1記載の光検出素子であって;
上記エミッタ層の上にエミッタコンタクト層が設けられ;
該エミッタ層にあって該エミッタコンタクト層に触れずに平面的に見て該エミッタコンタクト層の周囲に沿う部分には、周方向にリング状に閉じ、該エミッタ層を上下に貫く追加の拡散領域が設けられていること;
を特徴とする光検出素子。
Priority Applications (1)
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JP2010532978A JP5386764B2 (ja) | 2008-10-10 | 2009-10-06 | 光検出素子 |
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JP2008264251 | 2008-10-10 | ||
JP2008264251 | 2008-10-10 | ||
JP2009075596 | 2009-03-26 | ||
JP2009075596 | 2009-03-26 | ||
PCT/JP2009/067689 WO2010041756A1 (ja) | 2008-10-10 | 2009-10-06 | 光検出素子 |
JP2010532978A JP5386764B2 (ja) | 2008-10-10 | 2009-10-06 | 光検出素子 |
Publications (2)
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JPWO2010041756A1 JPWO2010041756A1 (ja) | 2012-03-08 |
JP5386764B2 true JP5386764B2 (ja) | 2014-01-15 |
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JP2010532978A Expired - Fee Related JP5386764B2 (ja) | 2008-10-10 | 2009-10-06 | 光検出素子 |
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US (1) | US8530933B2 (ja) |
JP (1) | JP5386764B2 (ja) |
WO (1) | WO2010041756A1 (ja) |
Cited By (1)
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KR101766247B1 (ko) | 2016-04-26 | 2017-08-08 | 국방과학연구소 | 평면형 포토 다이오드 |
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JP5942068B2 (ja) * | 2010-01-25 | 2016-06-29 | アイアールスペック株式会社 | 化合物半導体受光素子アレイ |
IL220675B (en) * | 2012-06-28 | 2019-10-31 | Elta Systems Ltd | phototransistor |
JP2015073001A (ja) * | 2013-10-02 | 2015-04-16 | 三菱電機株式会社 | 半導体素子 |
US10553633B2 (en) * | 2014-05-30 | 2020-02-04 | Klaus Y.J. Hsu | Phototransistor with body-strapped base |
US9704832B1 (en) | 2016-02-29 | 2017-07-11 | Ixys Corporation | Die stack assembly using an edge separation structure for connectivity through a die of the stack |
CN109643733B (zh) * | 2016-08-19 | 2022-04-15 | 罗姆股份有限公司 | 半导体装置及半导体装置的制造方法 |
WO2018212175A1 (ja) * | 2017-05-15 | 2018-11-22 | ソニーセミコンダクタソリューションズ株式会社 | 光電変換素子および撮像素子 |
US11309412B1 (en) * | 2017-05-17 | 2022-04-19 | Northrop Grumman Systems Corporation | Shifting the pinch-off voltage of an InP high electron mobility transistor with a metal ring |
EP3704516A4 (en) * | 2017-10-30 | 2021-05-19 | Shenzhen Genorivision Technology Co. Ltd. | HIGH TIME RESOLUTION LIDAR DETECTOR |
CN108039363A (zh) * | 2017-11-30 | 2018-05-15 | 电子科技大学 | 光驱动SiC/GaN基半导体器件及其制作工艺 |
US10854646B2 (en) | 2018-10-19 | 2020-12-01 | Attollo Engineering, LLC | PIN photodetector |
US11522343B2 (en) * | 2019-06-28 | 2022-12-06 | Sumitomo Electric Industries, Ltd. | Surface-emitting laser and method of manufacturing the same |
CN111952385B (zh) * | 2020-08-21 | 2022-08-02 | 中国科学院长春光学精密机械与物理研究所 | 一种二维材料极化激元与异质结结合的红外光探测器 |
CN112103660B (zh) * | 2020-09-17 | 2022-01-21 | 中国人民解放军国防科技大学 | C波段宽带能量选择表面 |
CN118073459B (zh) * | 2024-04-18 | 2024-08-23 | 中国科学院宁波材料技术与工程研究所 | 一种光电晶体管及其制备方法 |
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JPS60213067A (ja) * | 1984-04-06 | 1985-10-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS61255075A (ja) * | 1985-05-03 | 1986-11-12 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 漏洩電流の低いpinフォトダイオード及びその製造方法 |
JPS63227053A (ja) * | 1987-03-17 | 1988-09-21 | Matsushita Electric Ind Co Ltd | 半導体受光素子 |
JP2005166837A (ja) * | 2003-12-01 | 2005-06-23 | Hamamatsu Photonics Kk | 半導体受光素子の製造方法 |
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JP2506074B2 (ja) | 1985-06-06 | 1996-06-12 | 株式会社東芝 | ヘテロ接合バイポ−ラトランジスタ及びその製造方法 |
JPS61198776A (ja) * | 1985-02-28 | 1986-09-03 | Fujitsu Ltd | ヘテロ接合バイポ−ラトランジスタおよびその製造方法 |
US4806997A (en) * | 1985-06-14 | 1989-02-21 | AT&T Laboratories American Telephone and Telegraph Company | Double heterostructure optoelectronic switch |
JPS62139354A (ja) | 1985-12-13 | 1987-06-23 | Nippon Telegr & Teleph Corp <Ntt> | ダブルヘテロ接合バイポ−ラトランジスタ及びその製法 |
JPH0671004B2 (ja) | 1985-12-16 | 1994-09-07 | 日本電気株式会社 | バイポ−ラトランジスタ |
JPH0671003B2 (ja) | 1985-12-16 | 1994-09-07 | 日本電気株式会社 | バイポ−ラトランジスタ |
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JPH05291605A (ja) | 1992-04-10 | 1993-11-05 | Mitsubishi Electric Corp | 半導体受光素子 |
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2009
- 2009-10-06 JP JP2010532978A patent/JP5386764B2/ja not_active Expired - Fee Related
- 2009-10-06 US US12/998,343 patent/US8530933B2/en not_active Expired - Fee Related
- 2009-10-06 WO PCT/JP2009/067689 patent/WO2010041756A1/ja active Application Filing
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JPS61255075A (ja) * | 1985-05-03 | 1986-11-12 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 漏洩電流の低いpinフォトダイオード及びその製造方法 |
JPS63227053A (ja) * | 1987-03-17 | 1988-09-21 | Matsushita Electric Ind Co Ltd | 半導体受光素子 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101766247B1 (ko) | 2016-04-26 | 2017-08-08 | 국방과학연구소 | 평면형 포토 다이오드 |
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US20110193133A1 (en) | 2011-08-11 |
WO2010041756A1 (ja) | 2010-04-15 |
US8530933B2 (en) | 2013-09-10 |
JPWO2010041756A1 (ja) | 2012-03-08 |
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