JP2017199935A - 平面のアバランシェ・フォトダイオード - Google Patents
平面のアバランシェ・フォトダイオード Download PDFInfo
- Publication number
- JP2017199935A JP2017199935A JP2017146759A JP2017146759A JP2017199935A JP 2017199935 A JP2017199935 A JP 2017199935A JP 2017146759 A JP2017146759 A JP 2017146759A JP 2017146759 A JP2017146759 A JP 2017146759A JP 2017199935 A JP2017199935 A JP 2017199935A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- avalanche photodiode
- semiconductor layer
- multiplication
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 67
- 238000010521 absorption reaction Methods 0.000 claims abstract description 28
- 230000000903 blocking effect Effects 0.000 claims abstract description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims 1
- -1 indium aluminum arsenic Chemical compound 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 11
- 230000005684 electric field Effects 0.000 description 9
- 239000006096 absorbing agent Substances 0.000 description 6
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 6
- 230000005641 tunneling Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (11)
- 第1の半導体層と、
前記第1の半導体層に直接隣接する増倍層と、
前記第1の半導体層の反対側で、前記増倍層に直接隣接する電荷制御層と、
低ドープであり、又は意図的にはドープされておらず、前記増倍層の反対側で、前記電荷制御層に直接隣接する第2の半導体層と、
前記第1の半導体層の反対側で、前記第2の半導体層に直接隣接する勾配吸収層と、
前記第2の半導体層の反対側で、前記勾配吸収層に直接隣接して位置するブロッキング層と
を備え、
前記勾配吸収層は、前記電荷制御層と前記増倍層の断面幅よりも短い断面幅を有し、前記電荷制御層と前記増倍層の断面幅はそれぞれ等しいアバランシェ・フォトダイオード。 - 前記第1の半導体層が、リン化インジウムから作られる、請求項1に記載のアバランシェ・フォトダイオード。
- 前記第1の半導体層が、n+ドープされている、請求項2に記載のアバランシェ・フォトダイオード。
- 前記増倍層が、インジウム・アルミニウム・ヒ素から作られる、請求項1に記載のアバランシェ・フォトダイオード。
- 前記勾配吸収層が、インジウム・ガリウム・ヒ素から作られる、請求項1に記載のアバランシェ・フォトダイオード。
- 前記勾配吸収層が、p+ドープされている、請求項1に記載のアバランシェ・フォトダイオード。
- 前記第1の半導体層に隣接する第1のコンタクトをさらに備える、請求項1に記載のアバランシェ・フォトダイオード。
- 前記勾配吸収層が、前記第2の半導体層の上に小面積の吸収領域を画定するようにエッチングされている、請求項1に記載のアバランシェ・フォトダイオード。
- 前記第2の半導体層の上の前記小面積の吸収領域に隣接する第2のコンタクトをさらに備える、請求項8に記載のアバランシェ・フォトダイオード。
- 前記アバランシェ・フォトダイオードの少なくとも一部分が、不活性化構造で不活性化される、請求項9に記載のアバランシェ・フォトダイオード。
- 前記不活性化構造が、ベンゾシクロブテンから作られる、請求項10に記載のアバランシェ・フォトダイオード。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261648401P | 2012-05-17 | 2012-05-17 | |
US61/648,401 | 2012-05-17 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015514068A Division JP2015520950A (ja) | 2012-05-17 | 2013-05-17 | 平面のアバランシェ・フォトダイオード |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020037839A Division JP2020107901A (ja) | 2012-05-17 | 2020-03-05 | 平面のアバランシェ・フォトダイオード |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2017199935A true JP2017199935A (ja) | 2017-11-02 |
Family
ID=49624256
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015514068A Pending JP2015520950A (ja) | 2012-05-17 | 2013-05-17 | 平面のアバランシェ・フォトダイオード |
JP2017146759A Pending JP2017199935A (ja) | 2012-05-17 | 2017-07-28 | 平面のアバランシェ・フォトダイオード |
JP2020037839A Pending JP2020107901A (ja) | 2012-05-17 | 2020-03-05 | 平面のアバランシェ・フォトダイオード |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015514068A Pending JP2015520950A (ja) | 2012-05-17 | 2013-05-17 | 平面のアバランシェ・フォトダイオード |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020037839A Pending JP2020107901A (ja) | 2012-05-17 | 2020-03-05 | 平面のアバランシェ・フォトダイオード |
Country Status (7)
Country | Link |
---|---|
US (1) | US20150115319A1 (ja) |
EP (1) | EP2850665A4 (ja) |
JP (3) | JP2015520950A (ja) |
KR (1) | KR20150012303A (ja) |
CN (2) | CN108075010A (ja) |
CA (1) | CA2873841C (ja) |
WO (1) | WO2013176976A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10032950B2 (en) | 2016-02-22 | 2018-07-24 | University Of Virginia Patent Foundation | AllnAsSb avalanche photodiode and related method thereof |
KR20180119203A (ko) | 2017-04-24 | 2018-11-02 | 한국전자통신연구원 | 광 검출 소자 |
CN110518085B (zh) * | 2019-05-05 | 2021-05-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | 锑化物超晶格雪崩光电二极管及其制备方法 |
CN113594290B (zh) * | 2020-04-30 | 2023-09-08 | 成都英飞睿技术有限公司 | 一种延伸波长响应截止探测器及其制作方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004031707A (ja) * | 2002-06-26 | 2004-01-29 | Ntt Electornics Corp | アバランシ・フォトダイオード |
JP2005539368A (ja) * | 2002-02-01 | 2005-12-22 | ピコメトリックス インコーポレイテッド | プレーナ・アバランシェ・フォトダイオード |
US20060001118A1 (en) * | 2004-06-30 | 2006-01-05 | Boisvert Joseph C | Low capacitance avalanche photodiode |
JP2007250585A (ja) * | 2006-03-13 | 2007-09-27 | Nec Corp | 半導体光素子 |
JP2007311455A (ja) * | 2006-05-17 | 2007-11-29 | Nec Corp | 半導体受光素子 |
JP2010147177A (ja) * | 2008-12-17 | 2010-07-01 | Ntt Electornics Corp | アバランシ・フォトダイオード |
JP2011198808A (ja) * | 2010-03-17 | 2011-10-06 | Renesas Electronics Corp | アバランシェフォトダイオード |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2699807B2 (ja) * | 1993-06-08 | 1998-01-19 | 日本電気株式会社 | 組成変調アバランシ・フォトダイオード |
JPH11330536A (ja) * | 1998-05-13 | 1999-11-30 | Nec Corp | 半導体受光素子 |
JP3141847B2 (ja) * | 1998-07-03 | 2001-03-07 | 日本電気株式会社 | アバランシェフォトダイオード |
US20030111675A1 (en) * | 2001-11-27 | 2003-06-19 | Jds Uniphase Corporation | Doped absorption for enhanced responsivity for high speed photodiodes |
US7072557B2 (en) * | 2001-12-21 | 2006-07-04 | Infinera Corporation | InP-based photonic integrated circuits with Al-containing waveguide cores and InP-based array waveguide gratings (AWGs) and avalanche photodiodes (APDs) and other optical components containing an InAlGaAs waveguide core |
CN100474634C (zh) * | 2002-02-01 | 2009-04-01 | 派克米瑞斯公司 | 改进的光电探测器 |
JP2005516414A (ja) * | 2002-02-01 | 2005-06-02 | ピコメトリックス インコーポレイテッド | 充電制御アバランシェ・フォトダイオードおよびその製造方法 |
JP2005223022A (ja) * | 2004-02-03 | 2005-08-18 | Ntt Electornics Corp | アバランシ・フォトダイオード |
CA2564218A1 (en) * | 2004-04-30 | 2005-12-01 | Picometrix, Llc | Planar avalanche photodiode |
US7683397B2 (en) * | 2006-07-20 | 2010-03-23 | Intel Corporation | Semi-planar avalanche photodiode |
US8212286B2 (en) * | 2007-12-26 | 2012-07-03 | Nec Corporation | Semiconductor light receiving element |
EP2200096B1 (en) * | 2008-12-18 | 2019-09-18 | Alcatel Lucent | Avalanche photodiode |
JP2010278406A (ja) * | 2009-06-01 | 2010-12-09 | Opnext Japan Inc | アバランシェホトダイオード及びこれを用いた光受信モジュール |
-
2013
- 2013-05-17 US US14/400,478 patent/US20150115319A1/en not_active Abandoned
- 2013-05-17 EP EP13793205.9A patent/EP2850665A4/en not_active Withdrawn
- 2013-05-17 CN CN201711451881.9A patent/CN108075010A/zh active Pending
- 2013-05-17 CN CN201380025871.2A patent/CN104603958A/zh active Pending
- 2013-05-17 JP JP2015514068A patent/JP2015520950A/ja active Pending
- 2013-05-17 WO PCT/US2013/041536 patent/WO2013176976A1/en active Application Filing
- 2013-05-17 CA CA2873841A patent/CA2873841C/en active Active
- 2013-05-17 KR KR20147035498A patent/KR20150012303A/ko not_active IP Right Cessation
-
2017
- 2017-07-28 JP JP2017146759A patent/JP2017199935A/ja active Pending
-
2020
- 2020-03-05 JP JP2020037839A patent/JP2020107901A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005539368A (ja) * | 2002-02-01 | 2005-12-22 | ピコメトリックス インコーポレイテッド | プレーナ・アバランシェ・フォトダイオード |
JP2004031707A (ja) * | 2002-06-26 | 2004-01-29 | Ntt Electornics Corp | アバランシ・フォトダイオード |
US20060001118A1 (en) * | 2004-06-30 | 2006-01-05 | Boisvert Joseph C | Low capacitance avalanche photodiode |
JP2007250585A (ja) * | 2006-03-13 | 2007-09-27 | Nec Corp | 半導体光素子 |
JP2007311455A (ja) * | 2006-05-17 | 2007-11-29 | Nec Corp | 半導体受光素子 |
JP2010147177A (ja) * | 2008-12-17 | 2010-07-01 | Ntt Electornics Corp | アバランシ・フォトダイオード |
JP2011198808A (ja) * | 2010-03-17 | 2011-10-06 | Renesas Electronics Corp | アバランシェフォトダイオード |
Also Published As
Publication number | Publication date |
---|---|
KR20150012303A (ko) | 2015-02-03 |
WO2013176976A1 (en) | 2013-11-28 |
US20150115319A1 (en) | 2015-04-30 |
CA2873841A1 (en) | 2013-11-28 |
EP2850665A4 (en) | 2016-03-02 |
CN108075010A (zh) | 2018-05-25 |
CA2873841C (en) | 2021-01-05 |
CN104603958A (zh) | 2015-05-06 |
JP2020107901A (ja) | 2020-07-09 |
WO2013176976A8 (en) | 2015-01-08 |
EP2850665A1 (en) | 2015-03-25 |
JP2015520950A (ja) | 2015-07-23 |
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