TW201603304A - 光感測器及其製造方法 - Google Patents
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Abstract
一種光感測器的改良結構,包含在一半導體基板上設置兩端式雙極性光電晶體,該兩端式雙極性光電晶體具有基極、集極與射極端點。透過金屬導線或者離子摻雜形成電性傳導區域連結基板和該兩端式光電晶體基極,藉以導引基板照光後產生的光電流至基極端點,用以增加兩端式光電晶體元件光感測能力。
Description
本發明涉及一種半導體裝置及其製作方法,尤其有關於光感測半導體元件及其製造方法。
在光感測元件領域中,光電晶體可以設計成二端式或者三端式元件。當元件設計成三端式元件時,雖然可以獲得較高之光電流增益,但三端式元件也具有較大的穩態電流,容易造成元件漏電流增加與靜態功率損害的問題。此外,若想從三端式光電晶體的總電流中萃取所需的光電流亦需要額外的技術設計,因此造成諸多不便。然而,對於一個兩端式光電晶體而言,由於其基極通常處於浮接的狀態,雖然可以有效的降低元件漏電流,但同時也降低了光電流增益。綜合上述,目前光電晶體仍面臨許多亟需改善的問題。
有鑑於此,有必要提供一種光感測器及其製造方法。
一種光感測元件結構,係形成於一基板上,包含: 至少一個光電晶體設置於該基板上,該光電晶體具有一基極區域;及一電性傳導區,其改良在於該電性傳導區電性連結該基板與該光電晶體之基極區域。
一種光感測元件結構的製造方法,包含形成至少一個光電晶體於該光感測元件結構的步驟:
提供一P型傳導半導體基板;
形成一N型傳導內埋區域於該P型傳導半導體基板;
形成一N型傳導磊晶區域鄰近於該N型傳導內埋區域;
形成一P型傳導基極鄰近於該N型傳導磊晶區域;
形成一射極區域覆蓋部分該P型傳導基極;以及
形成一電性傳導區電性連結該P型傳導基極與該P型傳導半導體基板。
一種光感測元件結構的製造方法,包含形成至少一個光電晶體於該光感測元件結構上的步驟:
提供一P型傳導基板;
形成一N型傳導區域於該P型傳導基板上;
形成一P型傳導區域鄰近於該N型傳導區域;
摻雜部分該P型傳導區域形成至少一個集極和至少一個射極區域;
形成一N型通道金氧半場效電晶體於該P型傳導區域上;以及
形成一電性傳導區電性連結該P型傳導區域與該P型傳導基板。
一種光敏元件,包含:
一第一傳導類型之基板;
一第二傳導類型之內埋層,設置於該基板上;以及
至少一個光電晶體設置於該基板上,該光電晶體包含一第一傳導類型之基極;
其中,一電性傳導區電性連結該第一傳導類型基板與該光電晶體之第一傳導類型基極。
一種光敏元件,包含:
一第一傳導類型之基板;
一第二傳導類型之電性絕緣區域,設置於該第一傳導類型基板上; 以及
一個或複數個光電晶體,設置於該第一傳導類型基板上,該光電晶體具有包覆於該絕緣區域內的第一傳導類型基極;
其中,一電性傳導區電性連結該第一傳導類型基板與該光電晶體之第一傳導類型基極。
一種半導體元件,包含:
一基板; 以及
一兩端式光敏電晶體,該兩端式光敏電晶體具有一基極;
其中,一電性傳導區電性連結該基板與該兩端式光敏電晶體之基極。
圖 1係本發明第一實施例之光感測元件結構的上視圖。
圖2係本發明之圖1光感測元件結構沿著A-A’線段的剖面圖。
圖3A係本發明一實施例光敏元件,具有基板與基極形成一電性連結的示意圖。
圖3B係本發明另一實施例光敏元件,具有基板與基極形成一電性連結的示意圖。
圖4係本發明一實施例光感測元件結構上光電晶體,於不同光照射強度下產生的光電流圖。
圖5係本發明矽鍺雙極互補式金氧半異質接面光電晶體,在基板與基極具有及未具有電性連接的光頻譜響應圖。
圖6係本發明矽鍺雙極互補式金氧半異質接面光電晶體,在具有基板與基極電性連接情況,其集極與基板電流之頻譜響應圖。
圖7係本發明一實施例光感測元件結構上之互補式金氧半光電晶體,在具有金屬材料或離子摻雜形成一電性傳導區域電性連結基板與基極的橫切面圖。
圖8A係本發明之另一實施例之光敏元件,透過一金屬連線形成基板與基極電性連結的電路圖。
圖8B係本發明之另一實施例之光敏元件,具有一離子摻雜形成基板與基極電性連結的電路圖。
圖9係本發明一實施例矽鍺雙極互補式金氧半異質接面光電晶體,具有延伸基極,藉此形成基板與基極連結的上視圖。
圖10係本發明一實施例互補式金氧半光電晶體,具有N型場效電晶體以及具有利用金屬導線形成基板與基極相連結的之上視圖。
圖11係本發明圖10沿著B-B’線段的剖面圖。
圖12係本發明一實施例互補式金氧半光電晶體,具有N型場效電晶體以及具有基板與基極相連結之上視圖。
圖13係本發明圖12沿著C-C’線段的橫切面圖。
圖14係本發明一實施例影像感測單元由光電晶體組成之結構示意圖。
圖15係本發明一實施例影像感測模組由光電晶體組成之方塊圖。
圖16係本發明一實施例影像處理系統由光電晶體組成之方塊圖。
圖17係本發明一實施例之光電感測元件結構上光電晶體製造流程圖。
圖18係本發明另一實施例之光電感測元件結構上光電晶體製造流程圖。
本發明之構思可以利用不同形式之實施例表示,說明書所示附圖與文中說明係為本發明之一實施範例,並非意圖將本發明限制於所示附圖及/或所描述之特定實施例中。
本發明第一實施例之光感測元件結構1可參閱圖1,圖1係該光感測元件結構1元件之上視圖,該元件長度和寬度皆為60微米。其中,該光感測元件結構1係藉由堆疊不同的結構層,在該光感測元件結構1上形成一個或複數個標準矽鍺異質接面雙極性光電晶體,該光電晶體結構層可區分為一基板區域3(簡稱基板)、一集極區域 20(簡稱集極),一基極區域 25(簡稱基極),以及覆蓋部分基極區域25之射極區域12(簡稱射極)。
圖2係本發明第一實施例的光感測元件結構1沿著圖一A-A’切線的剖面圖,圖2的編號若與圖1相近,代表相類似的組成元素。圖2所示的基板3係P型傳導半導體,該基板3內包含一N型傳導半導體內埋層22;設置於鄰近該N型傳導半導體內埋層22的區域為一N型傳導半導體的磊晶層24,該N型傳導內埋層22通常具有1019/cm3-1021/cm3左右的離子摻雜濃度,其離子摻雜濃度一般高於於該N型傳導磊晶層24;設置於鄰近該N型傳導磊晶層的區域為一N型傳導的集極區域20,該N型傳導集極區域20通常亦具有比該N型傳導磊晶層24較高的離子摻雜濃度;設置於鄰近該N型傳導磊晶層24的區域為一P型傳導半導體層,為該光電晶體之基極區域25。
請參閱圖2,該光感測元件結構具有一離子重摻雜區域15,設置於該電晶體的基板區域3上,藉以降低端點電阻值,並且設置複數個場氧化層(FOX)14於該離子重摻雜區域15和集極區域20之間,藉此形成電性絕緣。該射極區域12由N型傳導的多晶矽材料所組成,相較於該N型傳導磊晶層具有較高的離子摻雜濃度,該N型傳導射極區域12同時覆蓋部分P型傳導基極區域25。另外,該光感測元件結構上設置複數個金屬接觸端10於該重摻雜區域15、集極區域20、基極區域25以及射極區域12之上,藉此形成元件金屬接觸,以降低傳導電阻。其中,該離子重摻雜區域15的金屬接觸端10藉由一金屬導線5所形成的電性傳導區域電性連結至該基極區域25。
圖3A和B係本發明第一實施例光敏元件的電路結構圖,如圖3A和B所示,該光敏元件具有基極50、集極55、射極60以及P型基板56等組成單元。圖3A表現本發明一實施例的一個構向,該基極50利用一金屬導線70形成電性傳導區電性連結至該P型基板56;圖3B表現另一種構向,該基極50利用一離子重摻雜區域80形成一電性傳導區電性連結該P型基板56。
圖4係本發明第一實施例光感測元件結構1的光電流對光照射強度的對應圖,當該光感測元件結構1在施加一較小的偏壓(VCE=1.2V)情況下,傳統結構的光感測元件結構,具有長寬皆為60微米的元件尺寸,其基板與基極並未形成任何電性傳導區域,該結構已具有可觀察的集極輸出電流,當輸入光照射功率在一個寬廣的動態範圍下(涵蓋120dB),該光電流對光照射強度的關係呈現相當線性的行為。請參閱圖4,當光照射強度低至0.01流明,其光輸出電流仍有1.7奈安培,相當於電流密度為每平方公分47.2微安培,相同元件與光照射強度下,偵測到的暗電流僅為1.7微微安培,該傳統光感測元件結構的訊號對雜訊比在0.01流明的光照射強度下可保持為60dB。
另外,本發明第一實施例中矽鍺異質接面光電晶體,其特徵在於具有一電性傳導區域電性連結該光電晶體之基極與該基板。圖4為此光感測元件結構對於多種入射光線強度所偵測到的光感應電流,相較於傳統元件的光感測元件結構,其光電晶體之基極與基板並未具有一電性傳導區域形成一電性連結,具有一百倍以上的光電流增強效果,在入射光強度為0.01流明的環境下,偵測到的光感應電流可達到0.2微安培,驗證本發明之光感測元件結構的基極若與基板若形成一電性傳導區域,提供兩者形成一電性連結,可以有效的增加該元件的光感應能力。另外,在相同入射光強度為0.01流明的環境下,在相同的外在施加偏壓下(VCE=1.2V),該元件的暗電流僅為18微微安培,等同於每平方公分0.5微安培的電流密度。當一矽鍺異質接面光電晶體具有一基極與基板電性傳導區域形成電性連結的結構,相較於傳統結構光感測元件結構的訊號對雜訊比,在0.01流明的光照射下,可以有效的從60dB提昇至80dB。
請參照第5圖,本發明第一實施例中,光感測元件結構上的矽鍺異質接面光電晶體(HPT)處於不同入射光波長的情況下,所產生的光響應度散布圖。圖5上有三條曲線分別代表具有傳統結構的矽鍺異質接面光電晶體元件的集極電流(HPT_IC)和射極(HPT_IE)電流,詳細電流值請參照圖5中右側刻度,以及具有基極與基板電性傳導區域形成電性連結的矽鍺異質接面光電晶體元件的光電流(HPT_I),詳細電流值請參照圖5中左側刻度。該傳統結構的矽鍺異質接面光電晶體,其光電晶體的基極與基板並未形成一電行傳導區域造成電性連結,當元件施加偏壓VCE為1.2 V,入射波光長為630奈米的情況下,該元件的集極電流具有一峰值,該峰值在630奈米入射光下,每瓦的入射功率可以產生3.7安培的光電流。由於一般光感測元件結構都具有一N型傳導的內埋層,該N型傳導內埋層與P型傳導的基板形成一額外的寄生PN接面,可以用於接收入射光,以產生額外的集極電流,該額外的集極電流雖然不能藉由二端式異質接面光電晶體產生電流放大的效果,但會隨著入射光的波長增加而增加,其原因在於此寄生PN接面的空乏區相當寬廣以及基板厚度相當的厚,因此在長波長的入射光照射下,元件所產生的集極電流的值通常會大於射極電流值。
請參照圖5,本發明一具體實施例中矽鍺異質接面光電晶體,處於不同入射光波長的情況下,對應產生的光響應度散布圖。其中,當傳統結構矽鍺異質接面光電晶體,處於較短波長的入射波長光照射環境下,元件的射極與集極的光響應度曲線大致上重疊,且集極電流略大於射極電流,但隨著入射光波長增加,集極與射極的光響應度曲線逐漸的分開不重疊,但仍保持集極電流大於射極電流的關係。由於光感應器元件結構的基板在長波長的入射光照射情況下,相較於短波長入射光照射可以產生較多的電洞,且在一矽鍺異質接面光電晶體元件其基極與基板形成一電性傳導區域的元件中,基板照射長波長光後所產生的電洞可以被導引到基極端形成光電流輸出,因此該元件光響應度的峰值會落在較長波長的入射光位置,同時光響應度的峰值會相較於傳統結構的元件高。請參照圖5,在每瓦入射光能量照射下,一矽鍺異質接面光電晶體具有其基極與基板形成一電性傳導區域產生電性連接的結構,其元件光響應峰值可以高達75安培。
請參照圖6係本發明一具體實施例中矽鍺異質接面光電晶體的光響應度散布圖。該矽鍺異質接面光電晶體元件(HPT)具有其基極與基板形成一電性傳導區域產生電性連結的結構,該元件的集極電流(Ic)和基板電流(Isub)與總集極電流(Ic+Isub)分別標示於圖6的不同曲線中。請參照圖6,該矽鍺異質接面光電晶體的基板電流Isub(電洞為主),相較於該元件集極電流Ic的峰值,位處在較長波長的位置。上述結果與具有基板與基極電性連結的矽鍺異質接面光電晶體所量測到的光響應度結果一致,代表基板藉由長波長入射光照射下所產生的載子可以提供基板一額外的光電流產生,進而增加元件輸出電流。
圖7係本發明另一實施例的光感測器元件結構的剖面圖,該光感測元件結構包含一個以上具有互補式金屬氧化物半導體(CMOS)結構的光電晶體2,該CMOS光電晶體 2可與一般業界標準半導體製程相容,該CMOS光電晶體2具有一橫向NPN雙極性接面電晶體的結構,包含一N型傳導射極區域122、一P型傳導基極區域250和一N型傳導集極區域200。該CMOS光電晶體2設置於一P型傳導半導體井22上,該P型傳導半導體井222與一P型傳導基板30,藉由一設置於兩者間的N型傳導半導體層220形成電性隔絕。其中,本發明特徵在於將該P型傳導基極區域250與該P型傳導基板30藉由一電性傳導區85產生一電性連結關係。
圖8A-8B係一光敏元件電路圖,該光敏元件具有一個以上的CMOS光電晶體2,該CMOS光電晶體2的電路結構具有一集極端點95、一射極端點90、一基極端點85,一基板端點96,當傳統CMOS光電晶體操作於一般狀態下,該基極端點96設計為一浮接狀態,光電流訊號僅由集極端點95與射極端點90輸出。請參閱圖8A係本發明之一面向,由於該基板端點96與該基極端點85在一般操作狀態下,並未存有任何電性連結的關係。藉由設置一金屬導線92於該光電晶體之基板端點96與基極端點85之間,形成一電性傳導區域進而產生一電性連結關係,該金屬導線92材料可為鋁、銅、金、銀、石墨烯、氧化銦錫(ITO)或相類似之電性良導體。參閱圖8B係本發明之另一面向,該光電晶體之該基板端點96與基極端點85之間可透過一離子重摻雜方式,形成一電性傳導區域80,進而產生一電性連結該基板端點96與該基極端點85。
圖9係本發明另一實施例光感測元件結構4的上視圖,該光感測元件結構4包含一個以上的光電晶體,該光電晶體具有一基板(圖中未標示)、一集極區域110與一集極區域接觸點115、一射極區域101與一射極區域接處點105以及一基極區域118。該基極區域118兩側利用離子重摻雜的方式往外延伸,越過該集極區域110藉由一電性傳導區域直接與基板相互連結,形成一電性連結路徑。利用上述離子重摻雜的方式,延伸該基極區域118直接與基板形成電性接觸,而不需要透過任何金屬導線或接觸孔的方式,可以有效的減少線電阻以及接觸電阻。
參閱圖10係本發明另一實施例光感測元件結構6的上視圖,圖11係本發明另一實施例光感測元件結構6於圖10中沿著B-B’切線的剖面圖。此實施例相似於圖7所示的結構,不同之處在於此光感測元件結構利用一N型傳導金屬氧化物半導體(金氧半)場效電晶體130取代圖7原先標示之場氧化層(FOX),該金氧半場效電晶體130設置於一集極區域127與一射極區域125之間,使得該集極區域127與該射極區域125兩者形成一電性隔離。該N型傳導金氧半導體場效電晶體130的汲極區域與源極區域可以視為該光感測元件結構上一光電晶體的集極區域127與射極區域125,同時該N型傳導金氧半場效電晶體130的通道寬度可以利用標準半導體製程中的最小通道長度規則進行製造,以減少該光電晶體的集極區域127與射極區域125之間的距離。請參閱圖10,該光電晶體的基板區域30藉由一金屬導線50產生一電性傳導區域產生電性連結至該電晶體的基極區域250。請參閱圖11,該光電晶體操作在兩端式光電晶體情況下,該N型傳導金氧半場效電晶體130的閘極126原始情況是處於浮接的狀態。另外該光電晶體的基極區域250與射極區域125藉由場氧化層(FOX)形成電性隔絕。
參閱圖12係本發明另一實施例光感測元件結構7的上視圖,圖13係本發明另一實施例光感測元件結構7於圖12中沿著C-C’切線的剖面圖。此實施例相似於圖10與圖11所示的結構,不同在於該光感測元件結構7上具有一個以上的光電晶體,該電晶體的基極區域123藉由一離子重摻雜的方式,跨過一N型傳導井220所形成的電性隔絕區域,形成一電性傳導區域產生一電性連接路徑至該電晶體的基板30。
請參閱圖14係本發明另一實施例的影像感測像素的電路圖,本發明所揭露之光感測元件結構上的光電晶體11,可以構成該影像感測像素51中的一個光感測單元,入射光線可以藉由該光電晶體11偵測並轉換成電訊號,產生電荷累積於該影像感測像素51的一浮接端點 DR。該影像感測像素單元51具有一重置電晶體T1用於重置該浮接端點DR的累積電荷量,並且作為一個訊號參考值,該重置電晶體T1的閘極端連接到一個訊號重置線RSL,該訊號重置線RSL可提供訊號控制該重置電晶體M1進行訊號更新。該影像感測像素51包含一源極隨偶器T2用於緩衝該影像感測像素51的輸出訊號。該影像感測像素51包含一選擇電晶體T3用於選擇輸出該影像感測像素51的訊號電壓值Vout,該選擇電晶體M3的閘極連結到一個訊號位元線WDL進行訊號選擇控制。
參閱圖15係本發明另一實施例影像感測模組的結構圖,該影像感測模組300包含由一光感測元件結構上複數個光電晶體,該複數個光電晶體形成複數個影像感測像素51,該光電晶體可以排列成單行、單列、多行、多列或者矩陣的形式。請參閱圖15,由該光電晶體排列成矩陣形式的一影像感測矩陣301可藉由一電性連結至行解碼器302、列解碼器310、多功器315與類比/數位轉換器316,萃取每一影像感測像素51接收入射光後所產生的電訊號,接著進行後續的電訊號處理,而產生影像讀取與轉換的功能。請參閱圖16係本發明另一實施例影像處理系統的方塊圖,其中該影像處理系統400包含一影像感測模組300,該影像感測模組300用以讀取和處理每一影像感測像素的電訊號,接著透過該影像處理系統400的顯示單元401將影像資訊顯示於使用者知悉,或者將影像資訊儲存於該影像處理系統400的記憶模組402內。
請參閱圖17係本發明之另一實施例製造光感測元件結構中的光電晶體方法之流程圖,其中所列的步驟可以增加或減少,製程步驟的順序也可以調換。首先,步驟S01提供一P型傳導(p-type)的基板,步驟S02形成一N型傳導(n-type well)內埋區域於該P型傳導基板(p-type substrate)內,步驟S03形成一N型傳導磊晶區(n-type epitaxy)於該N型傳導內埋區(buried layer)上,步驟S04形成一P型傳導基極區域於該N型傳導磊晶區上,步驟S05形成一射極區域覆蓋該P型傳導基極區域,步驟S06該P型傳導基極區域產生一電性傳導區電性連結至該P型傳導基板。
請參閱圖18係本發明之另一實施例製造光感測元件結構中的光電晶體製造方法之流程圖,所列的步驟可以額外增加或減少,製造步驟的順序也可以調換。首先,步驟S10提供一P型傳導的基板,步驟S11形成一N型傳導井於該P型傳導基板內,步驟S12形成一P型傳導井於該N型傳導井上,步驟S13在該P型傳導井上藉由摻雜的方式形成至少一個集極區域與至少一個射極區域,步驟S14在該P型傳導井上形成至少一個N型傳導通道金屬氧化物半導體場效電晶體,步驟S15該P型傳導井形成一電性傳導區電性連結至該P型傳導基板。
雖然本發明以優選實施例揭示如上,然其並非用以限定本發明,任何本領域技術人員,在不脫離本發明的精神和範圍內,當可做各種的變化,這些依據本發明精神所做的變化,都應包含在本發明所要求的保護範圍之內。
3‧‧‧基板
5‧‧‧金屬導線
10‧‧‧金屬接觸端
12‧‧‧射極區域
14‧‧‧場氧化層(FOX)
15‧‧‧離子重摻雜區域
20‧‧‧N型傳導集極區域
22‧‧‧N型傳導半導體內埋層
24‧‧‧N型傳導半導體磊晶層
25‧‧‧基極區域
無
1‧‧‧光敏電晶體
3‧‧‧基板區
5‧‧‧金屬連接體
10‧‧‧金屬觸點
12‧‧‧射極區
13、14‧‧‧場氧化層
15‧‧‧摻雜區
20‧‧‧集極區
22‧‧‧埋層
25‧‧‧基極區
Claims (25)
- 一種光感測元件結構,係形成於一基板上,包含: 至少一個光電晶體設置於該基板上,該光電晶體具有一基極區域;及一電性傳導區,其改良在於該電性傳導區電性連結該基板與該光電晶體之基極區域。
- 如申請專利權利範圍第1項之光感測元件結構,其進一步包含設置一N型摻雜內埋層於該基板,其中該基板為P型傳導體,該光電晶體設置於該N型摻雜內埋層上。
- 如申請專利權利範圍第2項之光感測元件結構,其中該光電晶體包含:在上述N型摻雜內埋層鄰近區域設置N型傳導磊晶層;在該N型傳導磊晶層鄰近區域設置P型傳導體基極;於該P型傳導體基極部分鄰近區域設置N型傳導體的射極。
- 如申請專利權利範圍第1項之光感測元件結構,其進一步包含設置一N型傳導區域於該基板,其中該基板為P型傳導體,該至少一個光電晶體設置於該N型傳導區域。
- 如申請專利權利範圍第4項之光感測元件結構,其進一步包含一P型傳導區域,設置於鄰近該N型傳導區域,其中該P型傳導區域包含基極區域。
- 如申請專利權利範圍第5項之光感測元件結構,其進一步包含一射極與集極於該P型傳導區域,且該射極與該集極藉由一N型通道金氧半場效電晶體形成隔離。
- 如申請專利權利範圍第1項之光感測元件結構,其中該電性傳導區可為金屬材料或摻雜材料。
- 如申請專利權利範圍第1項之光感測元件結構,其中該至少一個光電晶體可排列成一維形式。
- 如申請專利權利範圍第1項之光感測元件結構,其中該至少一個光電晶體可排列成二維形式。
- 如申請專利權利範圍第1項之光感測元件結構,其中該光感測元件結構係包含於一電子裝置模組,該電子裝置模組包含複數個以二維矩陣形式排列的光電晶體、一多工器單元和一解碼單元,其中至少一個光電晶體電性連結到該多工器單元或解碼單元。
- 一種光感測元件結構的製造方法,包含形成至少一個光電晶體於該光感測元件結構的步驟:
提供一P型傳導半導體基板;
形成一N型傳導內埋區域於該P型傳導半導體基板;
形成一N型傳導磊晶區域鄰近於該N型傳導內埋區域;
形成一P型傳導基極鄰近於該N型傳導磊晶區域;
形成一射極區域覆蓋部分該P型傳導基極;以及
形成一電性傳導區電性連結該P型傳導基極與該P型傳導半導體基板。 - 一種光感測元件結構的製造方法,包含形成至少一個光電晶體於該光感測元件結構上的步驟:
提供一P型傳導基板;
形成一N型傳導區域於該P型傳導基板上;
形成一P型傳導區域鄰近於該N型傳導區域;
摻雜部分該P型傳導區域形成至少一個集極和至少一個射極區域;
形成一N型通道金氧半場效電晶體於該P型傳導區域上;以及
形成一電性傳導區電性連結該P型傳導區域與該P型傳導基板。 - 如申請專利權利範圍第11與12項之光感測元件結構的製造方法,其中該電性傳導區可為金屬材料或摻雜材料。
- 如申請專利權利範圍第11與12項之光感測元件結構的製造方法,其中該至少一個光電晶體可排列成一維形式。
- 如申請專利權利範圍第11與12項之光感測元件結構的製造方法,其中該至少一個光電晶體可排列成二維形式。
- 一種光敏元件,包含:
一第一傳導類型之基板;
一第二傳導類型之內埋層,設置於該基板上;以及
至少一個光電晶體設置於該基板上,該光電晶體包含一第一傳導類型之基極;
其中,一電性傳導區電性連結該第一傳導類型基板與該光電晶體之第一傳導類型基極。 - 一種光敏元件,包含:
一第一傳導類型之基板;
一第二傳導類型之電性絕緣區域,設置於該第一傳導類型基板上; 以及
一個或複數個光電晶體,設置於該第一傳導類型基板上,該光電晶體具有包覆於該絕緣區域內的第一傳導類型基極;
其中,一電性傳導區電性連結該第一傳導類型基板與該光電晶體之第一傳導類型基極。 - 如申請專利權利範圍第16與17項之光敏元件,其中該至少一個光電晶體可排列成一維形式。
- 如申請專利權利範圍第16與17項之光敏元件,其中該至少一個光電晶體可排列成二維形式。
- 如申請專利權利範圍第16與17項之光感測元件結構,其中該電性傳導區可為金屬材料或摻雜材料。
- 一種半導體元件,包含:
一基板; 以及
一兩端式光敏電晶體,該兩端式光敏電晶體具有一基極;
其中,一電性傳導區電性連結該基板與該兩端式光敏電晶體之基極。 - 如申請專利權利範圍第21項之半導體元件,其中該基板與該兩端式光敏電晶體基極為浮接狀態。
- 如申請專利權利範圍第21項之半導體元件,其中該電性傳導區可為金屬材料或摻雜材料。
- 如申請專利權利範圍第21之半導體元件,其中該基板為一P型傳導體,且該兩端式光敏電晶體基極為一P型傳導體。
- 如申請專利權利範圍第24之半導體元件,其中該基板與該兩端式光敏電晶體之基極藉由一N型傳導區域形成電性隔絕。
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2014
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TWI746067B (zh) * | 2019-12-03 | 2021-11-11 | 義明科技股份有限公司 | 光感測器及其感測方法 |
TWI821781B (zh) * | 2021-07-29 | 2023-11-11 | 神盾股份有限公司 | 光感測裝置 |
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US20150349186A1 (en) | 2015-12-03 |
CN105226128A (zh) | 2016-01-06 |
CN105226128B (zh) | 2017-05-17 |
US10553633B2 (en) | 2020-02-04 |
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