CN102412281B - 锗硅异质结双极晶体管 - Google Patents
锗硅异质结双极晶体管 Download PDFInfo
- Publication number
- CN102412281B CN102412281B CN2010102917661A CN201010291766A CN102412281B CN 102412281 B CN102412281 B CN 102412281B CN 2010102917661 A CN2010102917661 A CN 2010102917661A CN 201010291766 A CN201010291766 A CN 201010291766A CN 102412281 B CN102412281 B CN 102412281B
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- deep hole
- bipolar transistor
- heterojunction bipolar
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- 229910000577 Silicon-germanium Inorganic materials 0.000 title abstract description 7
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title abstract description 3
- 238000002347 injection Methods 0.000 claims abstract description 20
- 239000007924 injection Substances 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 34
- 229910052760 oxygen Inorganic materials 0.000 claims description 34
- 239000001301 oxygen Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000005516 engineering process Methods 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 238000002513 implantation Methods 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910052732 germanium Inorganic materials 0.000 claims description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 13
- 238000005468 ion implantation Methods 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 150000001638 boron Chemical class 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (12)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010102917661A CN102412281B (zh) | 2010-09-26 | 2010-09-26 | 锗硅异质结双极晶体管 |
US13/239,250 US8378457B2 (en) | 2010-09-26 | 2011-09-21 | Silicon-germanium heterojunction bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010102917661A CN102412281B (zh) | 2010-09-26 | 2010-09-26 | 锗硅异质结双极晶体管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102412281A CN102412281A (zh) | 2012-04-11 |
CN102412281B true CN102412281B (zh) | 2013-07-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010102917661A Active CN102412281B (zh) | 2010-09-26 | 2010-09-26 | 锗硅异质结双极晶体管 |
Country Status (2)
Country | Link |
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US (1) | US8378457B2 (zh) |
CN (1) | CN102412281B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103094361B (zh) * | 2011-11-03 | 2015-12-09 | 上海华虹宏力半导体制造有限公司 | 一种SiGe HBT工艺中的PIS电容器及其制造方法 |
CN103035690B (zh) * | 2012-06-08 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | 击穿电压为7-10v锗硅异质结双极晶体管及其制备方法 |
US8785977B2 (en) * | 2012-11-08 | 2014-07-22 | Shanghai Hua Hong Nec Electronics Co., Ltd. | High speed SiGe HBT and manufacturing method thereof |
US10553633B2 (en) * | 2014-05-30 | 2020-02-04 | Klaus Y.J. Hsu | Phototransistor with body-strapped base |
US9892958B2 (en) * | 2014-12-02 | 2018-02-13 | Globalfoundries Inc. | Contact module for optimizing emitter and contact resistance |
US10153361B2 (en) | 2016-11-23 | 2018-12-11 | Globalfoundries Inc. | Heterojunction bipolar transistor device integration schemes on a same wafer |
CN109950258B (zh) * | 2017-12-20 | 2021-01-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制造方法 |
US11233140B2 (en) | 2019-04-23 | 2022-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and manufacturing method thereof |
DE102020103046B4 (de) * | 2019-04-23 | 2024-03-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleitervorrichtung und herstellungsverfahren dafür |
CN111834226A (zh) * | 2019-04-23 | 2020-10-27 | 台湾积体电路制造股份有限公司 | 半导体器件及其制造方法 |
US11557650B2 (en) * | 2019-04-23 | 2023-01-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11393713B2 (en) * | 2019-04-23 | 2022-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method therefore |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5949097A (en) * | 1995-03-17 | 1999-09-07 | Hitachi, Ltd. | Semiconductor device, method for manufacturing same, communication system and electric circuit system |
CN101101922A (zh) * | 2007-08-01 | 2008-01-09 | 中电华清微电子工程中心有限公司 | Npn型的锗硅异质结双极晶体管及其制造方法 |
CN101179024A (zh) * | 2006-11-08 | 2008-05-14 | 国际商业机器公司 | 单晶外部基极和发射极异质结构双极晶体管及相关方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6724066B2 (en) * | 2001-04-30 | 2004-04-20 | Texas Instruments Incorporated | High breakdown voltage transistor and method |
US6770952B2 (en) * | 2001-04-30 | 2004-08-03 | Texas Instruments Incorporated | Integrated process for high voltage and high performance silicon-on-insulator bipolar devices |
JP2004079719A (ja) * | 2002-08-15 | 2004-03-11 | Nec Electronics Corp | 半導体装置及びその製造方法 |
US7091099B2 (en) * | 2003-03-25 | 2006-08-15 | Matsushita Electric Industrial Co., Ltd. | Bipolar transistor and method for fabricating the same |
US7119401B2 (en) * | 2004-01-07 | 2006-10-10 | International Business Machines Corporation | Tunable semiconductor diodes |
US7679164B2 (en) * | 2007-01-05 | 2010-03-16 | International Business Machines Corporation | Bipolar transistor with silicided sub-collector |
US8217380B2 (en) * | 2008-01-09 | 2012-07-10 | International Business Machines Corporation | Polysilicon emitter BJT access device for PCRAM |
CN102347354B (zh) * | 2010-08-05 | 2013-04-24 | 上海华虹Nec电子有限公司 | 锗硅异质结双极晶体管及制造方法 |
-
2010
- 2010-09-26 CN CN2010102917661A patent/CN102412281B/zh active Active
-
2011
- 2011-09-21 US US13/239,250 patent/US8378457B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5949097A (en) * | 1995-03-17 | 1999-09-07 | Hitachi, Ltd. | Semiconductor device, method for manufacturing same, communication system and electric circuit system |
CN101179024A (zh) * | 2006-11-08 | 2008-05-14 | 国际商业机器公司 | 单晶外部基极和发射极异质结构双极晶体管及相关方法 |
CN101101922A (zh) * | 2007-08-01 | 2008-01-09 | 中电华清微电子工程中心有限公司 | Npn型的锗硅异质结双极晶体管及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20120074465A1 (en) | 2012-03-29 |
CN102412281A (zh) | 2012-04-11 |
US8378457B2 (en) | 2013-02-19 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131219 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20131219 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |