CN102386218B - BiCMOS工艺中的垂直寄生型PNP器件及其制造方法 - Google Patents
BiCMOS工艺中的垂直寄生型PNP器件及其制造方法 Download PDFInfo
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- CN102386218B CN102386218B CN201010270115.4A CN201010270115A CN102386218B CN 102386218 B CN102386218 B CN 102386218B CN 201010270115 A CN201010270115 A CN 201010270115A CN 102386218 B CN102386218 B CN 102386218B
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Description
Claims (16)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010270115.4A CN102386218B (zh) | 2010-08-31 | 2010-08-31 | BiCMOS工艺中的垂直寄生型PNP器件及其制造方法 |
US13/220,485 US8637959B2 (en) | 2010-08-31 | 2011-08-29 | Vertical parasitic PNP device in a BiCMOS process and manufacturing method of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201010270115.4A CN102386218B (zh) | 2010-08-31 | 2010-08-31 | BiCMOS工艺中的垂直寄生型PNP器件及其制造方法 |
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Publication Number | Publication Date |
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CN102386218A CN102386218A (zh) | 2012-03-21 |
CN102386218B true CN102386218B (zh) | 2013-10-23 |
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CN201010270115.4A Active CN102386218B (zh) | 2010-08-31 | 2010-08-31 | BiCMOS工艺中的垂直寄生型PNP器件及其制造方法 |
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US (1) | US8637959B2 (zh) |
CN (1) | CN102386218B (zh) |
Families Citing this family (3)
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CN104900686B (zh) * | 2014-03-03 | 2018-10-26 | 中芯国际集成电路制造(上海)有限公司 | 晶体管及其制造方法 |
JP6830390B2 (ja) * | 2017-03-28 | 2021-02-17 | エイブリック株式会社 | 半導体装置 |
US10916642B2 (en) | 2019-04-18 | 2021-02-09 | Globalfoundries U.S. Inc. | Heterojunction bipolar transistor with emitter base junction oxide interface |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5547893A (en) * | 1995-12-27 | 1996-08-20 | Vanguard International Semiconductor Corp. | method for fabricating an embedded vertical bipolar transistor and a memory cell |
CN101459130A (zh) * | 2007-12-14 | 2009-06-17 | 上海华虹Nec电子有限公司 | BiCMOS工艺中寄生垂直PNP及制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10223785A (ja) * | 1997-02-06 | 1998-08-21 | Citizen Watch Co Ltd | 半導体装置とその製造方法 |
US6054344A (en) * | 1998-10-30 | 2000-04-25 | Taiwan Semiconductor Manufacturing Company | OTP (open trigger path) latchup scheme using buried-diode for sub-quarter micron transistors |
US6770952B2 (en) * | 2001-04-30 | 2004-08-03 | Texas Instruments Incorporated | Integrated process for high voltage and high performance silicon-on-insulator bipolar devices |
JP2005045016A (ja) * | 2003-07-22 | 2005-02-17 | Nec Electronics Corp | 半導体集積回路 |
-
2010
- 2010-08-31 CN CN201010270115.4A patent/CN102386218B/zh active Active
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2011
- 2011-08-29 US US13/220,485 patent/US8637959B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5547893A (en) * | 1995-12-27 | 1996-08-20 | Vanguard International Semiconductor Corp. | method for fabricating an embedded vertical bipolar transistor and a memory cell |
CN101459130A (zh) * | 2007-12-14 | 2009-06-17 | 上海华虹Nec电子有限公司 | BiCMOS工艺中寄生垂直PNP及制备方法 |
Non-Patent Citations (1)
Title |
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JP特开平10-223785A 1998.08.21 |
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Publication number | Publication date |
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US8637959B2 (en) | 2014-01-28 |
US20120049327A1 (en) | 2012-03-01 |
CN102386218A (zh) | 2012-03-21 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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