JP2005045016A - 半導体集積回路 - Google Patents
半導体集積回路 Download PDFInfo
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- JP2005045016A JP2005045016A JP2003277461A JP2003277461A JP2005045016A JP 2005045016 A JP2005045016 A JP 2005045016A JP 2003277461 A JP2003277461 A JP 2003277461A JP 2003277461 A JP2003277461 A JP 2003277461A JP 2005045016 A JP2005045016 A JP 2005045016A
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- 239000004065 semiconductor Substances 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 27
- 238000009792 diffusion process Methods 0.000 abstract description 55
- 230000003071 parasitic effect Effects 0.000 abstract description 26
- 229910021332 silicide Inorganic materials 0.000 abstract description 14
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 230000001681 protective effect Effects 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
出力MOSトランジスタのドレイン部における寄生容量、寄生抵抗が小さく、高速回路動作可能なESD耐性の強化された出力回路を提供する。
【解決手段】
出力端子と接地端子間(または電源端子間)に専用の静電保護回路が設けられており、この静電保護回路と並列接続された出力回路は、ソース・ドレイン領域の全域がシリサイド化された第1MOSトランジスタと第2MOSトランジスタのカスコード接続で構成されている。両トランジスタのゲート電極は内部回路に接続されており、第1MOSトランジスタのソース拡散層と第2MOSトランジスタのドレイン拡散層は各々離間して形成されてメタル配線で接続されている。
【選択図】 図2
Description
32 抵抗体
36、46 NMOSソース
40、50 NMOSゲート
55 フィールド絶縁膜
56 N+ドレインコンタクト領域
60〜68 N+拡散層
69〜76 ポリシリコン(ゲート電極)
110、210 第1NMOSトランジスタ
111、211 第2NMOSトランジスタ
33、34、112 出力端子
32、38、113 接地端子
114 ESD保護回路
41、115、215 内部回路
116 出力回路
120、220 P型シリコン基板
121 第1NMOSドレイン領域(N+拡散層)
122 第1NMOSゲート電極(N+拡散層)
123 第1NMOSソース領域(N+拡散層)
124 第2NMOSドレイン領域(N+拡散層)
125 第2NMOSゲート電極(N+拡散層)
126 第2NMOSソース領域(N+拡散層)
127 出力回路コンタクト領域(高濃度P+拡散層)
130 メタル配線
131 シャロートレンチアイソレーション
54、58、132、232 シリサイド膜
140、240 寄生NPNバイポーラ
141、241 P型シリコン基板の寄生抵抗
260 Nウェル
Claims (6)
- 半導体基板上に構成される半導体集積回路において、出力端子と接地端子間に設けられた静電保護回路と、前記出力端子と前記接地端子間にカスコード接続された第1MOSトランジスタと第2MOSトランジスタを備えた出力回路とを有し、前記第1MOSトランジスタは第1ドレイン領域および第1ソース領域および第1ゲート電極で構成され、前記第2MOSトランジスタは第2ドレイン領域および第2ソース領域および第2ゲート電極で構成されており、前記第1ドレイン領域は前記出力端子へ接続されており、前記第1ソース領域は前記第2ドレイン領域へ接続されており、前記第2ソース領域は前記接地端子へ接続されており、前記第1ゲート電極および前記第2ゲート電極は内部回路へ接続されており、前記第1ソース領域と前記第2ドレイン領域は各々離間して形成されていることを特徴とする半導体集積回路。
- 前記第1ドレイン領域、前記第1ソース領域、前記第2ドレイン領域、前記第2ソース領域ともその全域がシリサイド化されていることを特徴とする請求項1記載の半導体集積回路。
- 前記第1ソース領域と前記第2ドレイン領域との間に、前記出力回路の基板コンタクト領域が設けられていることを特徴とする請求項1記載の半導体集積回路。
- 半導体基板上に構成される半導体集積回路において、出力端子と電源端子間に設けられた静電保護回路と、前記出力端子と前記電源端子間にカスコード接続された第3MOSトランジスタと第4MOSトランジスタを備えた出力回路とを有し、前記第3MOSトランジスタは第3ドレイン領域および第3ソース領域および第3ゲート電極で構成され、前記第4MOSトランジスタは第4ドレイン領域および第4ソース領域および第4ゲート電極で構成されており、前記第3ドレイン領域は前記出力端子へ接続されており、前記第3ソース領域は前記第4ドレイン領域へ接続されており、前記第4ソース領域は前記電源端子へ接続されており、前記第3ゲート電極および前記第4ゲート電極は内部回路へ接続されており、前記第3ソース領域と前記第4ドレイン領域は各々離間して形成されていることを特徴とする半導体集積回路。
- 前記第3ドレイン領域、前記第3ソース領域、前記第4ドレイン領域、前記第4ソース領域ともその全域がシリサイド化されていることを特徴とする請求項4記載の半導体集積回路。
- 前記第3ソース領域と前記第4ドレイン領域との間に、前記出力回路の基板コンタクト領域が設けられていることを特徴とする請求項4記載の半導体集積回路。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003277461A JP2005045016A (ja) | 2003-07-22 | 2003-07-22 | 半導体集積回路 |
KR1020040051399A KR20050011681A (ko) | 2003-07-22 | 2004-07-02 | 반도체 집적회로 |
US10/894,016 US20050017306A1 (en) | 2003-07-22 | 2004-07-20 | Semiconductor integrated circuit |
TW093121912A TW200509372A (en) | 2003-07-22 | 2004-07-22 | Semiconductor integrated circuit |
CNA2004100544416A CN1577859A (zh) | 2003-07-22 | 2004-07-22 | 半导体集成电路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003277461A JP2005045016A (ja) | 2003-07-22 | 2003-07-22 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005045016A true JP2005045016A (ja) | 2005-02-17 |
JP2005045016A5 JP2005045016A5 (ja) | 2005-09-02 |
Family
ID=34074639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003277461A Pending JP2005045016A (ja) | 2003-07-22 | 2003-07-22 | 半導体集積回路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050017306A1 (ja) |
JP (1) | JP2005045016A (ja) |
KR (1) | KR20050011681A (ja) |
CN (1) | CN1577859A (ja) |
TW (1) | TW200509372A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113497030A (zh) * | 2020-04-08 | 2021-10-12 | 新唐科技股份有限公司 | 半导体装置 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7595245B2 (en) * | 2005-08-12 | 2009-09-29 | Texas Instruments Incorporated | Semiconductor device having a gate electrode material feature located adjacent a gate width side of its gate electrode and a method of manufacture therefor |
JP4995455B2 (ja) | 2005-11-30 | 2012-08-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5586819B2 (ja) * | 2006-04-06 | 2014-09-10 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置 |
JP5171412B2 (ja) * | 2007-10-01 | 2013-03-27 | 株式会社ジャパンディスプレイウェスト | 液晶表示装置及び電子機器 |
KR100952245B1 (ko) * | 2007-12-26 | 2010-04-09 | 주식회사 동부하이텍 | 정전기 방전 보호회로 및 그 제조 방법 |
US7701682B2 (en) * | 2008-01-31 | 2010-04-20 | Freescale Semiconductors, Inc. | Electrostatic discharge protection |
CN102386218B (zh) * | 2010-08-31 | 2013-10-23 | 上海华虹Nec电子有限公司 | BiCMOS工艺中的垂直寄生型PNP器件及其制造方法 |
JP5581907B2 (ja) * | 2010-09-01 | 2014-09-03 | 株式会社リコー | 半導体集積回路及び半導体集積回路装置 |
CN102437180B (zh) * | 2011-11-21 | 2013-09-11 | 上海华虹Nec电子有限公司 | 超高压锗硅hbt器件及其制造方法 |
US9553011B2 (en) | 2012-12-28 | 2017-01-24 | Texas Instruments Incorporated | Deep trench isolation with tank contact grounding |
WO2014113970A1 (en) * | 2013-01-25 | 2014-07-31 | Suzhou Red Maple Wind Blade Mould Co., Ltd | Electrostatic elimination from a mould |
JP2014187288A (ja) * | 2013-03-25 | 2014-10-02 | Toshiba Corp | 静電保護回路 |
US9472948B2 (en) * | 2013-09-30 | 2016-10-18 | Infineon Technologies Ag | On chip reverse polarity protection compliant with ISO and ESD requirements |
US10361186B1 (en) * | 2018-02-07 | 2019-07-23 | Infineon Technologies Ag | Suppression of parasitic discharge path in an electrical circuit |
CN109063289B (zh) * | 2018-07-19 | 2022-12-30 | 北京顿思集成电路设计有限责任公司 | 半导体器件的评估方法 |
CN113258920B (zh) * | 2021-05-08 | 2023-12-22 | 华润微集成电路(无锡)有限公司 | 一种信号电平转换电路 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US58027A (en) * | 1866-09-11 | Improved roller for wringers | ||
US5019888A (en) * | 1987-07-23 | 1991-05-28 | Texas Instruments Incorporated | Circuit to improve electrostatic discharge protection |
US5440162A (en) * | 1994-07-26 | 1995-08-08 | Rockwell International Corporation | ESD protection for submicron CMOS circuits |
US5635737A (en) * | 1994-09-23 | 1997-06-03 | Aspec Technology, Inc. | Symmetrical multi-layer metal logic array with extension portions for increased gate density and a testability area |
US6232165B1 (en) * | 1998-12-09 | 2001-05-15 | Winbond Electronics Corporation | Buried guard rings and method for forming the same |
US6466423B1 (en) * | 2000-01-06 | 2002-10-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electrostatic discharge protection device for mixed voltage application |
JP3983067B2 (ja) * | 2001-03-19 | 2007-09-26 | Necエレクトロニクス株式会社 | 半導体集積回路の静電保護回路 |
US6444511B1 (en) * | 2001-05-31 | 2002-09-03 | Taiwan Semiconductor Manufacturing Company | CMOS output circuit with enhanced ESD protection using drain side implantation |
-
2003
- 2003-07-22 JP JP2003277461A patent/JP2005045016A/ja active Pending
-
2004
- 2004-07-02 KR KR1020040051399A patent/KR20050011681A/ko not_active Application Discontinuation
- 2004-07-20 US US10/894,016 patent/US20050017306A1/en not_active Abandoned
- 2004-07-22 CN CNA2004100544416A patent/CN1577859A/zh active Pending
- 2004-07-22 TW TW093121912A patent/TW200509372A/zh unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113497030A (zh) * | 2020-04-08 | 2021-10-12 | 新唐科技股份有限公司 | 半导体装置 |
CN113497030B (zh) * | 2020-04-08 | 2023-09-08 | 新唐科技股份有限公司 | 半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20050011681A (ko) | 2005-01-29 |
CN1577859A (zh) | 2005-02-09 |
US20050017306A1 (en) | 2005-01-27 |
TW200509372A (en) | 2005-03-01 |
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