JP5203850B2 - 静電気保護素子 - Google Patents
静電気保護素子 Download PDFInfo
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- JP5203850B2 JP5203850B2 JP2008213884A JP2008213884A JP5203850B2 JP 5203850 B2 JP5203850 B2 JP 5203850B2 JP 2008213884 A JP2008213884 A JP 2008213884A JP 2008213884 A JP2008213884 A JP 2008213884A JP 5203850 B2 JP5203850 B2 JP 5203850B2
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- 239000012535 impurity Substances 0.000 claims description 365
- 239000004065 semiconductor Substances 0.000 claims description 82
- 230000015556 catabolic process Effects 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 379
- 238000009792 diffusion process Methods 0.000 description 67
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 230000003321 amplification Effects 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
- 230000007935 neutral effect Effects 0.000 description 8
- 238000003199 nucleic acid amplification method Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 230000002427 irreversible effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7436—Lateral thyristors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Description
2 P-型不純物層(P型分離層)
3 N--型不純物層(第1不純物層)
4 N-型不純物層(第4不純物層)
5 P型不純物層(第2不純物層、ゲート)
6 N++型不純物層(第3不純物層、カソード)
7 P+型不純物層(ゲートコンタクト)
8 P+型不純物層(第5不純物層、アノード)
9 N++型不純物層(第6不純物層)
10 P+型不純物層(P型分離層)
11 素子分離絶縁膜
20 層間絶縁膜
21 NPNトランジスタ
22 PNPトランジスタ
23 アノード内蔵抵抗
24 コレクタ内蔵抵抗
25 ゲート内蔵抵抗
30 入出力PAD(入出力端子)
31、32、33、34 金属電極
40 内部回路(被保護回路)
50 保護抵抗
101 P型半導体基板
102 P-型拡散層(P型分離層)
103 N--型拡散層
104 N+型拡散層(コレクタ)
105 P型拡散層(ベース)
106 N++型拡散層(エミッタ)
107 P+型拡散層(ベースコンタクト)
109 N++型拡散層(コレクタコンタクト)
110 高濃度P型拡散層(P型分離層)
Claims (8)
- 半導体基板に形成される静電気保護素子において、
第1導電型の半導体基板と、
前記半導体基板に形成された、前記第1導電型とは反対導電型である第2導電型の第1不純物層と、
前記第1不純物層内に形成され、ゲートとして動作する第1導電型の第2不純物層と、
前記第2不純物層内に形成され、カソードとして動作する第2導電型の第3不純物層と、
前記第2不純物層から一定距離離間して前記第1不純物層内に形成され、サイリスタを構成するNPNトランジスタのコレクタおよびPNPトランジスタのベースとして動作する第2導電型の第4不純物層と、
前記第4不純物層内に形成され、アノードとして動作する第1導電型の第5不純物層と、
前記第4不純物層内に形成され、サイリスタを構成するPNPトランジスタのベースに電位を供給するコンタクト層となる第2導電型の第6不純物層と、を備え、
前記第4不純物層の不純物濃度は前記第1不純物層の不純物濃度よりも高く、かつ前記第4不純物層の底部が前記第2不純物層の底部より深いことを特徴とする静電気保護素子。 - 前記第5不純物層の不純物濃度は前記第4不純物層の不純物濃度よりも高い、請求項1記載の静電気保護素子。
- 前記静電気保護素子は、入出力端子、電源端子および被保護回路を有する半導体装置に内蔵され、
前記第2不純物層および前記第3不純物層は、前記半導体装置の最低電位に共通接続され、前記第5不純物層および前記第6不純物層は、前記入出力端子と前記被保護回路との両方に共通接続、または前記電源端子と前記被保護回路との両方に共通接続された請求項1または2記載の静電気保護素子。 - 前記第5不純物層および前記第6不純物層は、別々の配線を介してそれぞれ独立に前記被保護回路に接続された請求項3記載の静電気保護素子。
- 前記第1不純物層がエピタキシャル成長法によって形成された請求項1から3のいずれか1項に記載の静電気保護素子。
- 前記第4不純物層の底部が前記第1不純物層の底部より深い、あるいは同一深さである、請求項1から3のいずれか1項に記載の静電気保護素子。
- 前記静電気保護素子は、第2導電型のウェル層内に形成された高耐圧半導体素子と、第2導電型のウェル層内に形成された低耐圧半導体素子とを含む被保護回路を有する半導体装置に内蔵され、
前記高耐圧半導体素子が形成される第2導電型のウェル層および前記第1不純物層が同一の不純物プロファイルを有し、
前記低耐圧半導体素子が形成される第2導電型のウェル層および前記第4不純物層が同一の不純物プロファイルを有する、請求項1から3のいずれか1項に記載の静電気保護素子。 - 前記被保護回路が、第1導電型の高濃度不純物層を含むコンタクト層を有する半導体素子と、第2導電型の高濃度不純物層を含むコンタクト層を有する半導体素子とを含み、
前記第1導電型のコンタクト層および前記第5不純物層が同一の不純物プロファイルを有し、
前記第2導電型のコンタクト層、前記第3不純物層および前記第6不純物層が同一の不純物プロファイルを有する、請求項7記載の静電気保護素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008213884A JP5203850B2 (ja) | 2008-08-22 | 2008-08-22 | 静電気保護素子 |
US12/542,998 US7821029B2 (en) | 2008-08-22 | 2009-08-18 | Electrostatic protection element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008213884A JP5203850B2 (ja) | 2008-08-22 | 2008-08-22 | 静電気保護素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010050328A JP2010050328A (ja) | 2010-03-04 |
JP5203850B2 true JP5203850B2 (ja) | 2013-06-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008213884A Expired - Fee Related JP5203850B2 (ja) | 2008-08-22 | 2008-08-22 | 静電気保護素子 |
Country Status (2)
Country | Link |
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US (1) | US7821029B2 (ja) |
JP (1) | JP5203850B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8455950B2 (en) | 2010-06-04 | 2013-06-04 | Texas Instruments Incorporated | ESD diode with PSD partially overlying P-Epi circumferential of PSD |
US8710627B2 (en) * | 2011-06-28 | 2014-04-29 | Alpha And Omega Semiconductor Incorporated | Uni-directional transient voltage suppressor (TVS) |
JP5849670B2 (ja) | 2011-12-09 | 2016-02-03 | セイコーエプソン株式会社 | 半導体装置 |
EP2879182B1 (en) * | 2013-11-28 | 2018-07-11 | Nxp B.V. | Transistor, amplifier circuit and integrated circuit |
JP6590844B2 (ja) | 2017-02-13 | 2019-10-16 | 株式会社豊田中央研究所 | 半導体装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5747834A (en) | 1995-09-29 | 1998-05-05 | Texas Instruments Inc | Adjustable Bipolar SCR holding voltage for ESD protection circuits in high speed Bipolar/BiCMOS circuits |
KR970018516A (ko) | 1995-09-29 | 1997-04-30 | 윌리엄 이. 힐러 | 고속 바이폴라/bicmos 회로 esd 보호를 위해 트리거하는 향상된 바이폴라 scr |
US5808342A (en) | 1996-09-26 | 1998-09-15 | Texas Instruments Incorporated | Bipolar SCR triggering for ESD protection of high speed bipolar/BiCMOS circuits |
JP2002110811A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体保護装置 |
JP4437682B2 (ja) * | 2004-03-17 | 2010-03-24 | 日本電信電話株式会社 | 低容量esd保護回路 |
US7202531B2 (en) * | 2004-04-16 | 2007-04-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
JP2005333120A (ja) * | 2004-04-23 | 2005-12-02 | Nec Electronics Corp | 静電保護素子 |
JP2006093361A (ja) * | 2004-09-24 | 2006-04-06 | Matsushita Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2006128293A (ja) | 2004-10-27 | 2006-05-18 | Matsushita Electric Ind Co Ltd | 半導体集積回路の静電気保護素子 |
TWI257698B (en) * | 2005-07-22 | 2006-07-01 | Winbond Electronics Corp | Device for electrostatic discharge protection |
JP2007242923A (ja) | 2006-03-09 | 2007-09-20 | Matsushita Electric Ind Co Ltd | 半導体集積回路の静電気保護素子 |
JP2007294613A (ja) * | 2006-04-24 | 2007-11-08 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
-
2008
- 2008-08-22 JP JP2008213884A patent/JP5203850B2/ja not_active Expired - Fee Related
-
2009
- 2009-08-18 US US12/542,998 patent/US7821029B2/en active Active
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Publication number | Publication date |
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JP2010050328A (ja) | 2010-03-04 |
US20100044750A1 (en) | 2010-02-25 |
US7821029B2 (en) | 2010-10-26 |
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