CN102403222B - 锗硅异质结双极晶体管的制造方法 - Google Patents
锗硅异质结双极晶体管的制造方法 Download PDFInfo
- Publication number
- CN102403222B CN102403222B CN201010277649XA CN201010277649A CN102403222B CN 102403222 B CN102403222 B CN 102403222B CN 201010277649X A CN201010277649X A CN 201010277649XA CN 201010277649 A CN201010277649 A CN 201010277649A CN 102403222 B CN102403222 B CN 102403222B
- Authority
- CN
- China
- Prior art keywords
- base
- region
- window
- emitter
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910000577 Silicon-germanium Inorganic materials 0.000 title abstract description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title abstract description 4
- 150000002500 ions Chemical class 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000002513 implantation Methods 0.000 claims abstract description 20
- 229910052796 boron Inorganic materials 0.000 claims abstract description 14
- 238000005468 ion implantation Methods 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 7
- -1 boron ions Chemical class 0.000 claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 36
- 229910052760 oxygen Inorganic materials 0.000 claims description 36
- 239000001301 oxygen Substances 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 238000005516 engineering process Methods 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052732 germanium Inorganic materials 0.000 claims description 18
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 18
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 229910021332 silicide Inorganic materials 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000007943 implant Substances 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 230000009514 concussion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (9)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010277649XA CN102403222B (zh) | 2010-09-09 | 2010-09-09 | 锗硅异质结双极晶体管的制造方法 |
US13/229,570 US20120064688A1 (en) | 2010-09-09 | 2011-09-09 | Method for manufacturing silicon-germanium heterojunction bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010277649XA CN102403222B (zh) | 2010-09-09 | 2010-09-09 | 锗硅异质结双极晶体管的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102403222A CN102403222A (zh) | 2012-04-04 |
CN102403222B true CN102403222B (zh) | 2013-09-11 |
Family
ID=45807118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010277649XA Active CN102403222B (zh) | 2010-09-09 | 2010-09-09 | 锗硅异质结双极晶体管的制造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20120064688A1 (zh) |
CN (1) | CN102403222B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102446965B (zh) * | 2010-10-14 | 2013-09-11 | 上海华虹Nec电子有限公司 | 锗硅异质结双极晶体管 |
US9166067B2 (en) * | 2012-06-12 | 2015-10-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Device layout for reference and sensor circuits |
US8736355B2 (en) * | 2012-06-12 | 2014-05-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Device layout for reference and sensor circuits |
CN103681320B (zh) * | 2012-08-30 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | 锗硅异质结双极型三极管器件的制造方法 |
CN103730354A (zh) * | 2012-10-10 | 2014-04-16 | 上海华虹宏力半导体制造有限公司 | 锗硅异质结双极晶体管的制造方法 |
US8785977B2 (en) * | 2012-11-08 | 2014-07-22 | Shanghai Hua Hong Nec Electronics Co., Ltd. | High speed SiGe HBT and manufacturing method thereof |
CN103594500B (zh) * | 2013-12-02 | 2018-08-10 | 上海集成电路研发中心有限公司 | 一种锗硅异质结双极晶体管的制造方法 |
CN104576715A (zh) * | 2014-07-24 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | 锗硅异质结双极晶体管及制造方法 |
US10431654B2 (en) | 2015-06-25 | 2019-10-01 | International Business Machines Corporation | Extrinsic base doping for bipolar junction transistors |
RU2734060C1 (ru) * | 2019-11-05 | 2020-10-12 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) | Способ изготовления полупроводникового прибора |
CN111048584B (zh) * | 2019-12-23 | 2021-05-11 | 复旦大学 | 一种高线性氮化镓hbt射频功率器件及其制备方法 |
CN111463120B (zh) * | 2020-03-25 | 2023-02-17 | 派恩杰半导体(杭州)有限公司 | 一种碳化硅mosfet的沟道倾斜注入制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7022578B2 (en) * | 2003-10-09 | 2006-04-04 | Chartered Semiconductor Manufacturing Ltd. | Heterojunction bipolar transistor using reverse emitter window |
US7265018B2 (en) * | 2004-09-21 | 2007-09-04 | International Business Machines Corporation | Method to build self-aligned NPN in advanced BiCMOS technology |
CN101101922A (zh) * | 2007-08-01 | 2008-01-09 | 中电华清微电子工程中心有限公司 | Npn型的锗硅异质结双极晶体管及其制造方法 |
CN101459076A (zh) * | 2007-12-13 | 2009-06-17 | 上海华虹Nec电子有限公司 | SiGe HBT晶体管的制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3895595B2 (ja) * | 1999-05-27 | 2007-03-22 | フラウンホーファー−ゲゼルシャフト・ツール・フェルデルング・デル・アンゲヴァンテン・フォルシュング・アインゲトラーゲネル・フェライン | 背面接触により電気コンポーネントを垂直に集積する方法 |
JP2003045884A (ja) * | 2001-07-31 | 2003-02-14 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US6770541B1 (en) * | 2003-02-20 | 2004-08-03 | Newport Fab, Llc | Method for hard mask removal for deep trench isolation and related structure |
US6864560B2 (en) * | 2003-03-28 | 2005-03-08 | International Business Machines Corporation | Bipolar transistor structure with a shallow isolation extension region providing reduced parasitic capacitance |
US7049240B2 (en) * | 2003-11-10 | 2006-05-23 | United Microelectronics Corp. | Formation method of SiGe HBT |
US20060292809A1 (en) * | 2005-06-23 | 2006-12-28 | Enicks Darwin G | Method for growth and optimization of heterojunction bipolar transistor film stacks by remote injection |
US8067290B2 (en) * | 2009-01-27 | 2011-11-29 | Infineon Technologies Ag | Bipolar transistor with base-collector-isolation without dielectric |
-
2010
- 2010-09-09 CN CN201010277649XA patent/CN102403222B/zh active Active
-
2011
- 2011-09-09 US US13/229,570 patent/US20120064688A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7022578B2 (en) * | 2003-10-09 | 2006-04-04 | Chartered Semiconductor Manufacturing Ltd. | Heterojunction bipolar transistor using reverse emitter window |
US7265018B2 (en) * | 2004-09-21 | 2007-09-04 | International Business Machines Corporation | Method to build self-aligned NPN in advanced BiCMOS technology |
CN101101922A (zh) * | 2007-08-01 | 2008-01-09 | 中电华清微电子工程中心有限公司 | Npn型的锗硅异质结双极晶体管及其制造方法 |
CN101459076A (zh) * | 2007-12-13 | 2009-06-17 | 上海华虹Nec电子有限公司 | SiGe HBT晶体管的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102403222A (zh) | 2012-04-04 |
US20120064688A1 (en) | 2012-03-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102403222B (zh) | 锗硅异质结双极晶体管的制造方法 | |
CN102097464B (zh) | 高压双极晶体管 | |
CN102412281B (zh) | 锗硅异质结双极晶体管 | |
CN102347354B (zh) | 锗硅异质结双极晶体管及制造方法 | |
CN102446965B (zh) | 锗硅异质结双极晶体管 | |
US8216925B2 (en) | Transistor structure having a trench drain | |
CN102088029B (zh) | SiGe BiCMOS工艺中的PNP双极晶体管 | |
CN100361315C (zh) | 垂直dmos晶体管装置、集成电路及其制造方法 | |
CN102931226B (zh) | 自对准锗硅异质结双极型三极管及其制作方法 | |
CN102104064B (zh) | SiGe HBT工艺中的寄生横向型PNP三极管及其制造方法 | |
CN102544081B (zh) | 锗硅异质结npn三极管及制造方法 | |
CN102403344B (zh) | 锗硅BiCMOS工艺中的寄生PNP双极晶体管 | |
CN102544079B (zh) | 锗硅异质结npn晶体管及制造方法 | |
CN102064190B (zh) | SiGe BiCMOS工艺中的SiGe PNP双极晶体管 | |
CN103050537A (zh) | 射频横向双扩散场效应晶体管及其制造方法 | |
CN103035690A (zh) | 超高压锗硅异质结双极晶体管及其制备方法 | |
CN103137675B (zh) | 具有高击穿电压的锗硅异质结双极晶体管结构及其制作方法 | |
CN102544082B (zh) | 锗硅异质结npn三极管器件及制造方法 | |
CN102456726B (zh) | 锗硅异质结双极晶体管 | |
US8008719B2 (en) | Transistor structure having dual shield layers | |
CN102544080A (zh) | 锗硅异质结双极晶体管及制造方法 | |
CN103137678B (zh) | 锗硅异质结双极晶体管及制造方法 | |
CN114864681A (zh) | Nldmos器件、nldmos器件的制备方法及芯片 | |
CN103066119A (zh) | 锗硅异质结双极晶体管及制造方法 | |
CN103730354A (zh) | 锗硅异质结双极晶体管的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131219 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20131219 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |