CN102446965B - 锗硅异质结双极晶体管 - Google Patents
锗硅异质结双极晶体管 Download PDFInfo
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- CN102446965B CN102446965B CN2010105074183A CN201010507418A CN102446965B CN 102446965 B CN102446965 B CN 102446965B CN 2010105074183 A CN2010105074183 A CN 2010105074183A CN 201010507418 A CN201010507418 A CN 201010507418A CN 102446965 B CN102446965 B CN 102446965B
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- ion implanted
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- bipolar transistor
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 38
- 239000001301 oxygen Substances 0.000 claims abstract description 38
- 238000005468 ion implantation Methods 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 238000002347 injection Methods 0.000 claims description 21
- 239000007924 injection Substances 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000002513 implantation Methods 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 229910052732 germanium Inorganic materials 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 8
- 239000002356 single layer Substances 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 119
- 238000005530 etching Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010105074183A CN102446965B (zh) | 2010-10-14 | 2010-10-14 | 锗硅异质结双极晶体管 |
US13/271,126 US8395188B2 (en) | 2010-10-14 | 2011-10-11 | Silicon-germanium heterojunction bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010105074183A CN102446965B (zh) | 2010-10-14 | 2010-10-14 | 锗硅异质结双极晶体管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102446965A CN102446965A (zh) | 2012-05-09 |
CN102446965B true CN102446965B (zh) | 2013-09-11 |
Family
ID=45933392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010105074183A Active CN102446965B (zh) | 2010-10-14 | 2010-10-14 | 锗硅异质结双极晶体管 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8395188B2 (zh) |
CN (1) | CN102446965B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103094318B (zh) * | 2011-11-03 | 2016-08-17 | 上海华虹宏力半导体制造有限公司 | 一种SiGe HBT器件结构及其制造方法 |
CN103035690B (zh) * | 2012-06-08 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | 击穿电压为7-10v锗硅异质结双极晶体管及其制备方法 |
US8785977B2 (en) * | 2012-11-08 | 2014-07-22 | Shanghai Hua Hong Nec Electronics Co., Ltd. | High speed SiGe HBT and manufacturing method thereof |
CN103811540B (zh) * | 2012-11-15 | 2016-08-10 | 上海华虹宏力半导体制造有限公司 | 锗硅hbt晶体管及其版图结构和其制造方法 |
US10553633B2 (en) * | 2014-05-30 | 2020-02-04 | Klaus Y.J. Hsu | Phototransistor with body-strapped base |
DE102016220749B4 (de) * | 2016-10-21 | 2019-07-11 | Infineon Technologies Ag | Verfahren zur Herstellung von Ätzstoppbereichen zum Kontaktieren von Halbleitervorrichtungen |
CN108375446B (zh) * | 2018-04-17 | 2023-04-28 | 南京信息工程大学 | 一种探空巨压阻气压传感器阵列装置及测量方法 |
US10680086B2 (en) * | 2018-06-18 | 2020-06-09 | Qualcomm Incorporated | Radio frequency silicon-on-insulator integrated heterojunction bipolar transistor |
CN112071757B (zh) * | 2020-08-28 | 2023-10-03 | 重庆中科渝芯电子有限公司 | 一种基于BiCMOS工艺的硅锗异质结双极晶体管的制造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101101922A (zh) * | 2007-08-01 | 2008-01-09 | 中电华清微电子工程中心有限公司 | Npn型的锗硅异质结双极晶体管及其制造方法 |
CN101752414A (zh) * | 2009-12-17 | 2010-06-23 | 上海集成电路研发中心有限公司 | 一种三极管 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6815800B2 (en) * | 2002-12-09 | 2004-11-09 | Micrel, Inc. | Bipolar junction transistor with reduced parasitic bipolar conduction |
US8847359B2 (en) * | 2008-08-06 | 2014-09-30 | Texas Instruments Incorporated | High voltage bipolar transistor and method of fabrication |
CN102231379B (zh) * | 2009-12-21 | 2013-03-13 | 上海华虹Nec电子有限公司 | SiGe异质结双极晶体管多指结构 |
CN102403222B (zh) * | 2010-09-09 | 2013-09-11 | 上海华虹Nec电子有限公司 | 锗硅异质结双极晶体管的制造方法 |
-
2010
- 2010-10-14 CN CN2010105074183A patent/CN102446965B/zh active Active
-
2011
- 2011-10-11 US US13/271,126 patent/US8395188B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101101922A (zh) * | 2007-08-01 | 2008-01-09 | 中电华清微电子工程中心有限公司 | Npn型的锗硅异质结双极晶体管及其制造方法 |
CN101752414A (zh) * | 2009-12-17 | 2010-06-23 | 上海集成电路研发中心有限公司 | 一种三极管 |
Also Published As
Publication number | Publication date |
---|---|
US20120091509A1 (en) | 2012-04-19 |
CN102446965A (zh) | 2012-05-09 |
US8395188B2 (en) | 2013-03-12 |
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SE01 | Entry into force of request for substantive examination | ||
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140116 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140116 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |