CN103811540B - 锗硅hbt晶体管及其版图结构和其制造方法 - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
本发明公开了一种锗硅HBT晶体管，包括：位于硅衬底上的隔离区，位于隔离区之间的N型注入区，位于隔离区下侧N型注入区两侧的N型重掺杂区，位于隔离区底侧与N型注入区和N型重掺杂区相接的P型浅埋层，位于隔离区和N型注入区上方的锗硅区，位于锗硅区上方的氧化隔离物，位于氧化隔离物和锗硅区上方的多晶硅层，侧墙位于锗硅区和多晶硅层的两侧，N型重掺杂区通过深通孔引出形成集电极，锗硅区、多晶硅层通过接触孔引出形成发射极、基极；其中，多晶硅层的面积小于锗硅区的面积。本发明还公开了所述锗硅HBT晶体管的版图结构和制造方法。本发明的锗硅HBT晶体管在不改变集电区的厚度和掺杂浓度前提下，能提高器件的击穿电压。
Description
技术领域
本发明涉及集成电路制造领域，特别是涉及一种锗硅HBT晶体管。本发明还涉及所述一种所述锗硅HBT晶体管的版图结构和一种所述锗硅HBT晶体管的制造方法。
背景技术
由于现代通信对高频带下高性能、低噪声和低成本的RF组件的需求，传统的Si(硅)材料器件无法满足性能规格、输出功率和线性度新的要求，功率SiGe HBT(硅锗异质结双极晶体管)则在更高、更宽的频段的功放中发挥重要作用。与砷化镓器件相比，虽然在频率上还处劣势，但SiGe HBT凭着更好的热导率和良好的衬底机械性能，较好地解决了功放的散热问题，SiGe HBT还具有更好的线性度、更高集成度；SiGe HBT仍然属于硅基技术，和CMOS工艺有良好的兼容性，SiGe BiCMOS工艺为功放与逻辑控制电路的集成提供极大的便利，也降低了工艺成本。
国际上目前已经广泛采用SiGe HBT作为高频大功率功放器件应用于无线通讯产品，如手机中的功率放大器和低噪声放大器等。为了提高射频功率放大器的输出功率，在器件正常工作范围内通过提高工作电流和提高工作电压都是有效的方式。对于用于锗硅HBT，高耐压器件可使电路在相同功率下获得较小电流，从而降低功耗，因而需求广泛。因此在如何保持器件的特征频率的同时进一步提高SiGe HBT耐压越来越成为锗硅HBT器件的研究热点。
发明内容
本发明要解决的技术问题是提供一种在不改变集电区的厚度和掺杂浓度前提下，能提高器件的击穿电压的锗硅HBT晶体管。本发明还提供了一种所述锗硅HBT晶体管的版图结构和一种所述锗硅HBT晶体管的制造方法。
为解决上述技术问题，本发明的锗硅HBT晶体管，包括：位于硅衬底101上的隔离区301，位于隔离区301之间的N型注入区202，位于隔离区301下侧N型注入区202两侧的N型重掺杂区201，位于隔离区301底侧与N型注入区202和N型重掺杂区201相接的P型浅埋层203，位于隔离区301和N型注入区202上方的锗硅区402，位于锗硅区402上方的隔离氧化物503，位于隔离氧化物503和锗硅区402上方的多晶硅层502，侧墙401、501位于锗硅区402和多晶硅层502的两侧，N型重掺杂区201通过深接触孔602引出形成集电极，锗硅区402、多晶硅层502通过接触孔601引出形成发射极、基极；其中，多晶硅层502的面积小于锗硅区402的面积。
进一步改进，P型浅埋层203掺杂浓度小于N型重掺杂区201的掺杂浓度，P型浅埋层203在竖直方向距离晶体管顶面的深度小于N型重掺杂区201在竖直方向距离晶体管顶面的深度。
进一步改进，P型浅埋层203与N型重掺杂区201在竖直方向相交区域的宽度是6微米至完全相交。
进一步改进，N型注入区202为中低剂量掺杂，注入的剂量范围为1E12cm-2至8E14cm-2。
一种所述锗硅HBT晶体管的版图结构，其中，N型注入区202在版图上是闭合形状图形，能为带圆角的矩形、八边形或圆形。
进一步改进，P型浅埋层203在版图上介于N型重掺杂区201和N型注入区202之间，P型浅埋层203在版图是闭合形状图形，能为带角的矩形、八边形或圆形。
进一步改进，P型浅埋层203在版图上是由多段构成的分段式结构，每段P型浅埋层203在版图上的长度为0.1微米至10微米，两段P型浅埋层203之间距离为0.1微米至10微米。
一种锗硅HBT晶体管的制造方法，包括：
(1)在硅衬底101上通过浅槽隔离或场氧隔离技术制造隔离区301,注入形成N型重掺杂区201；
(2)注入中低掺杂形成N型注入区202；
(3)在器件纵向注入形成P型浅埋层203；
(4)外延重掺杂的锗硅区402；
(5)经过高剂量杂质离子注入并退火激活制造多晶硅层502，剂量为大于2E15cm-2；
(6)将N型重掺杂区201通过深接触孔602引出，深接触孔602中填入钛/氮化钛过渡金属层以及金属钨，形成集电极；锗硅区402、多晶硅层502通过接触孔601引出形成发射极、基极。
本发明通过N型注入区202与P型浅埋层203的耗尽改善集电区(即N型注入区202)和基区(锗硅区402)之间的结耗尽分布，从而提高HBT的集电区和基区击穿电压BVCEO；通过制作N型重掺杂区201和N型注入区202，来降低集电区与硅衬底101的寄生电容；由于N型注入区202与P型浅埋层203的横向耗尽，此集电区(N型注入区202)注入可比通常高击穿电压HBT更浓，从而降低集电区纵向导通电阻；由于N型重掺杂区201与P型浅埋层203的纵向耗尽，及深接触孔602结构可距离器件主体部分很近，避免了过大的横向集电极电阻，同时减小集电极的寄生电容。
本发明的锗硅HBT晶体管在不改变集电区的厚度和掺杂浓度前提下能提高器件的击穿电压，降低集电区导通电阻，从而获得高耐压低电阻即低功耗的锗硅HBT晶体管。
附图说明
下面结合附图与具体实施方式对本发明作进一步详细的说明：
图1是本发明锗硅HBT晶体管的结构示意图。
图2是本发明锗硅HBT晶体管版图结构一实施例的示意图。
图3是本发明锗硅HBT晶体管版图结构另一实施例的示意图。
附图标记说明
101是硅衬底
201是N型重掺杂区
202是N型注入区
203是P型浅埋层
301是隔离区
401、501是侧墙
402锗硅区
502是多晶硅层
503是隔离氧化物
601是接触孔
602是深接触孔
603是金属连线
A-A是竖直方向
具体实施方式
如图1所示，本发明的锗硅HBT晶体管，包括：位于硅衬底101上的隔离区301，位于隔离区301之间的N型注入区202，位于隔离区301下侧N型注入区202两侧的N型重掺杂区201，位于隔离区301底侧与N型注入区202和N型重掺杂区201相接的P型浅埋层203，位于隔离区301和N型注入区202上方的锗硅区402，位于锗硅区402上方的隔离氧化物503，位于隔离氧化物503和锗硅区402上方的多晶硅层502，侧墙401、501位于锗硅区402和多晶硅层502的两侧，N型重掺杂区201通过深接触孔602引出形成集电极，锗硅区402、多晶硅层502通过接触孔601引出形成发射极、基极；其中，多晶硅层502的面积小于锗硅区402的面积，P型浅埋层203掺杂浓度小于N型重掺杂区201的掺杂浓度，P型浅埋层203距离晶体管顶面的深度度小于N型重掺杂区201晶体管顶面的深度，P型浅埋层203与N型重掺杂区201在竖直方向(A-A方向)相交区域的宽度是6微米至完全相交，N型注入区202为中低剂量掺杂。
如图2所示，所述锗硅HBT晶体管的版图结构，N型注入区202在版图上是闭合形状图形，能为带圆角的矩形、八边形或圆形，本实施例中为带圆角的矩形；P型浅埋层203在版图上介于N型重掺杂区201和N型注入区202之间，P型浅埋层203在版图是闭合形状图形，能为带角的矩形、八边形或圆形。
如图3所示，所述锗硅HBT晶体管的版图结构的另一实施例，P型浅埋层203在版图上是由多段构成的分段式结构，每段P型浅埋层203在版图上的长度为0.1微米至10微米，两段P型浅埋层203之间距离为0微米至10微米，优选距离为2.5微米、5微米或7.5微米,。
一种锗硅HBT晶体管的制造方法，包括：
(1)在硅衬底101上通过浅槽隔离或场氧隔离技术制造隔离区301,注入形成N型重掺杂区201；
(2)注入中低掺杂形成N型注入区202；
(3)在器件纵向注入形成P型浅埋层203；
(4)外延重掺杂的锗硅区402；
(5)经过高剂量杂质离子注入并退火激活制造多晶硅层502，剂量为大于2E15cm-2；
(6)将N型重掺杂区201通过深接触孔602引出，深接触孔602中填入钛/氮化钛过渡金属层以及金属钨，形成集电极；锗硅区402、多晶硅层502通过接触孔601引出形成发射极、基极。
以上通过具体实施方式和实施例对本发明进行了详细的说明，但这些并非构成对本发明的限制。在不脱离本发明原理的情况下，本领域的技术人员还可做出许多变形和改进，这些也应视为本发明的保护范围。
Claims (8)
1.一种锗硅HBT晶体管，包括：位于硅衬底(101)上的隔离区(301)，位于隔离区(301)之间的N型注入区(202)，位于隔离区(301)下侧N型注入区(202)两侧的N型重掺杂区(201)，位于隔离区(301)和N型注入区(202)上方的锗硅区(402)，位于锗硅区(402)上方的隔离氧化物(503)，位于隔离氧化物(503)和锗硅区(402)上方的多晶硅层(502)，侧墙(401、501)位于锗硅区(402)和多晶硅层(502)的两侧，N型重掺杂区(201)通过深接触孔(602)引出形成集电极，锗硅区(402)、多晶硅层(502)通过接触孔(601)引出形成发射极、基极；多晶硅层(502)的面积小于锗硅区(402)的面积；其特征是：还包括位于隔离区(301)底侧与N型注入区(202)和N型重掺杂区(201)相接的P型浅埋层(203)。
2.如权利要求1所述的锗硅HBT晶体管，其特征是：P型浅埋层(203)掺杂浓度小于N型重掺杂区(201)的掺杂浓度，P型浅埋层(203)在竖直方向距离晶体管顶面的深度小于N型重掺杂区(201)在竖直方向距离晶体管顶面的深度。
3.如权利要求1所述的锗硅HBT晶体管，其特征是：P型浅埋层(203)与N型重掺杂区(201)在竖直方向相交区域的宽度是6微米至完全相交。
4.如权利要求1所述的锗硅HBT晶体管，其特征是：N型注入区(202)为中低剂量掺杂，注入的剂量范围为1E12cm-2至8E14cm-2。
5.一种如权利要求1-4任意一项所述锗硅HBT晶体管的版图结构，其特征是：N型注入区(202)在版图上是闭合形状图形，能为圆角的矩形、八边形或圆形。
6.一种如权利要求1-4任意一项所述锗硅HBT晶体管的版图结构，其特征是：P型浅埋层(203)在版图上介于N型重掺杂区(201)和N型注入区(202)之间，P型浅埋层(203)在版图是闭合形状图形，能为带角的矩形、八边形或圆形。
7.一种如权利要求6所述锗硅HBT晶体管的版图结构，其特征是：P型浅埋层(203)在版图上是由多段构成的分段式结构，每段P型浅埋层(203)在版图上的长度为0.1微米至10微米，两段P型浅埋层(203)之间距离为0.1微米至10微米。
8.一种锗硅HBT晶体管的制造方法，其特征是，包括：
(1)在硅衬底(101)上通过浅槽隔离或场氧隔离技术制造隔离区(301),注入形成N型重掺杂区(201)；
(2)注入中低掺杂形成N型注入区(202)；
(3)在器件纵向注入形成P型浅埋层(203)；
(4)外延重掺杂的锗硅区(402)；
(5)经过高剂量杂质离子注入并退火激活制造多晶硅层(502)，剂量为大于2E15cm-2；
(6)将N型重掺杂区(201)通过深接触孔(602)引出，深接触孔(602)中填入钛/氮化钛过渡金属层以及金属钨，引出形成集电极；锗硅区(402)、多晶硅层(502)通过接触孔(601)引出形成发射极、基极。
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| CN102437180A (zh) * | 2011-11-21 | 2012-05-02 | 上海华虹Nec电子有限公司 | 超高压锗硅hbt器件及其制造方法 |
| CN102446965A (zh) * | 2010-10-14 | 2012-05-09 | 上海华虹Nec电子有限公司 | 锗硅异质结双极晶体管 |
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