JP4715203B2 - 光検出器回路 - Google Patents
光検出器回路 Download PDFInfo
- Publication number
- JP4715203B2 JP4715203B2 JP2004520807A JP2004520807A JP4715203B2 JP 4715203 B2 JP4715203 B2 JP 4715203B2 JP 2004520807 A JP2004520807 A JP 2004520807A JP 2004520807 A JP2004520807 A JP 2004520807A JP 4715203 B2 JP4715203 B2 JP 4715203B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- layer
- semiconductor substrate
- apd
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 53
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 41
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 11
- 238000005286 illumination Methods 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- 230000004044 response Effects 0.000 description 7
- 150000003377 silicon compounds Chemical class 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本発明の1つの態様によると、光ダイオード検出器及び関連する読出回路を含む光検出器回路が提供され、該検出器回路は、読出回路を支持する1つの導電型の半導体ハンドル基板と、読出回路をハンドル基板から電気的に絶縁するハンドル基板上の絶縁層とを含み、光ダイオード検出器は、ハンドル基板に組み込まれたハンドル基板とは反対の導電型の第1アクティブ領域と、ハンドル基板に組み込まれた上記1つの導電型の第2アクティブ領域とを有するアバランシェ光ダイオードを含み、第1アクティブ領域と第2アクティブ領域との間のハンドル基板内にアクティブ電気光学接合を定めるようになっている。
こうした配置は、APDが相対的に高い逆バイアス(15‐30V)で動作し、CMOS回路が低電圧(5V)で動作するという点で、APDにCMOS回路を組み合わせる問題を克服しており、かつ、この配置は、高バイアス電圧が隣接するCMOSトランジスタの動作に影響を与えないようにするものでなければならない。基板にドーピング井戸を形成することによって、必要とされる電気的隔離をバルク・シリコン・ウェハに形成することが可能であるが、この種の隔離は装置及び回路設計上の制限になる。対照的に、本発明は、(典型的には約600μm厚)ハンドルウェハにAPDを形成し、かつウェハ上に形成された(典型的に約500nm厚)酸化物層の上面の(典型的に約300nm厚)薄いシリコン層にCMOS読出回路を形成することを提案するものであり、その結果、酸化物層によって、トランジスタとAPDとは電気的に隔離される。
Claims (5)
- 光ダイオード検出器及び関連する読出回路を含む光検出器回路であって、
該回路は、前記読出回路を支持し、かつ、それから電気的に絶縁された半導体基板を含み、
前記光ダイオード検出器は、前記半導体基板の薄肉にされた部分に組み込まれたアクティブ領域を有し、
前記半導体基板は、該半導体基板の裏面からの光が前記読出回路に入射するのを遮る遮光層を有する
ことを特徴とする光検出器回路。 - 前記半導体基板は、該半導体基板の裏面にドープ層を有し、
該回路は、前記ドープ層に接続された金属接点を有する
ことを特徴とする請求項1に記載の光検出器回路。 - 光ダイオード検出器及び関連する読出回路を組み込む光検出器回路を製造する方法であって、
半導体基板上に電気的絶縁層を形成する段階と、
前記電気的絶縁層の上面に前記読出回路を形成する段階と、
前記半導体基板上に前記光ダイオード検出器を形成する段階と、
前記半導体基板のうち前記光ダイオード検出器の近くを薄肉にする段階と、
前記半導体基板に、該半導体基板の裏面からの光が前記読出回路に入射するのを遮る遮光層を形成する段階と
を含むことを特徴とする光検出器回路の製造方法。 - 前記半導体基板を含む第1の半導体ウェハと、内部に前記読出回路が形成された半導体層を含む第2の半導体ウェハとの間に、サンドイッチ状に前記電気的絶縁層を形成する段階をさらに含む
ことを特徴とする請求項3に記載の光検出器回路の製造方法。 - 前記第1の半導体ウェハおよび前記第2の半導体ウェハが一体結合される前に前記第1の半導体ウェハまたは前記第2の半導体ウェハに、前記遮光層が形成される
ことを特徴とする請求項4に記載の光検出器回路の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0216075.2A GB0216075D0 (en) | 2002-07-11 | 2002-07-11 | Photodetector circuits |
GB0216075.2 | 2002-07-11 | ||
PCT/GB2003/002851 WO2004008537A2 (en) | 2002-07-11 | 2003-07-03 | Photodetector circuits |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005532695A JP2005532695A (ja) | 2005-10-27 |
JP4715203B2 true JP4715203B2 (ja) | 2011-07-06 |
Family
ID=9940248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004520807A Expired - Lifetime JP4715203B2 (ja) | 2002-07-11 | 2003-07-03 | 光検出器回路 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7453131B2 (ja) |
EP (1) | EP1532686A2 (ja) |
JP (1) | JP4715203B2 (ja) |
AU (1) | AU2003253098A1 (ja) |
CA (1) | CA2492696A1 (ja) |
GB (1) | GB0216075D0 (ja) |
TW (1) | TW200402146A (ja) |
WO (1) | WO2004008537A2 (ja) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7643755B2 (en) | 2003-10-13 | 2010-01-05 | Noble Peak Vision Corp. | Optical receiver comprising a receiver photodetector integrated with an imaging array |
JP4654623B2 (ja) * | 2004-07-08 | 2011-03-23 | ソニー株式会社 | 固体撮像装置の製造方法 |
DE102004060365B4 (de) * | 2004-12-15 | 2009-03-19 | Austriamicrosystems Ag | Bauelement mit Halbleiterübergang und Verfahren zur Herstellung |
JP4725095B2 (ja) | 2004-12-15 | 2011-07-13 | ソニー株式会社 | 裏面入射型固体撮像装置及びその製造方法 |
US20060157806A1 (en) * | 2005-01-18 | 2006-07-20 | Omnivision Technologies, Inc. | Multilayered semiconductor susbtrate and image sensor formed thereon for improved infrared response |
US7782921B2 (en) * | 2005-03-28 | 2010-08-24 | Intel Corporation | Integrated optical detector in semiconductor reflector |
GB2426576A (en) * | 2005-05-27 | 2006-11-29 | Sensl Technologies Ltd | Light sensor module comprising a plurality of elements in a close-tiled arrangement |
US7608823B2 (en) * | 2005-10-03 | 2009-10-27 | Teledyne Scientific & Imaging, Llc | Multimode focal plane array with electrically isolated commons for independent sub-array biasing |
US7671460B2 (en) * | 2006-01-25 | 2010-03-02 | Teledyne Licensing, Llc | Buried via technology for three dimensional integrated circuits |
CN101379615B (zh) * | 2006-02-01 | 2013-06-12 | 皇家飞利浦电子股份有限公司 | 盖革式雪崩光电二极管 |
US7629661B2 (en) * | 2006-02-10 | 2009-12-08 | Noble Peak Vision Corp. | Semiconductor devices with photoresponsive components and metal silicide light blocking structures |
US20080012087A1 (en) * | 2006-04-19 | 2008-01-17 | Henri Dautet | Bonded wafer avalanche photodiode and method for manufacturing same |
JP5006581B2 (ja) * | 2006-06-01 | 2012-08-22 | ルネサスエレクトロニクス株式会社 | 固体撮像装置 |
TWI443817B (zh) | 2006-07-03 | 2014-07-01 | Hamamatsu Photonics Kk | Photodiode array |
US7586602B2 (en) * | 2006-07-24 | 2009-09-08 | General Electric Company | Method and apparatus for improved signal to noise ratio in Raman signal detection for MEMS based spectrometers |
GB2442253A (en) * | 2006-09-13 | 2008-04-02 | X Fab Uk Ltd | A Semiconductor device |
JP2008172580A (ja) * | 2007-01-12 | 2008-07-24 | Toshiba Corp | 固体撮像素子及び固体撮像装置 |
US7923763B2 (en) * | 2007-03-08 | 2011-04-12 | Teledyne Licensing, Llc | Two-dimensional time delay integration visible CMOS image sensor |
US7498650B2 (en) * | 2007-03-08 | 2009-03-03 | Teledyne Licensing, Llc | Backside illuminated CMOS image sensor with pinned photodiode |
SE531025C2 (sv) * | 2007-04-02 | 2008-11-25 | Bo Cederwall | System och metod för fotondetektion och för mätning av fotonflöden |
KR101423055B1 (ko) * | 2007-04-18 | 2014-07-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 갖는 광전 변환 소자 및 이것을 사용한반도체 장치 |
US20110316105A1 (en) * | 2007-05-21 | 2011-12-29 | Sanders Thomas J | Monolithic Nuclear Event Detector and Method of Manufacture |
US8084739B2 (en) | 2008-07-16 | 2011-12-27 | Infrared Newco., Inc. | Imaging apparatus and methods |
US8686365B2 (en) | 2008-07-28 | 2014-04-01 | Infrared Newco, Inc. | Imaging apparatus and methods |
US8410568B2 (en) * | 2008-08-29 | 2013-04-02 | Tau-Metrix, Inc. | Integrated photodiode for semiconductor substrates |
US7795650B2 (en) * | 2008-12-09 | 2010-09-14 | Teledyne Scientific & Imaging Llc | Method and apparatus for backside illuminated image sensors using capacitively coupled readout integrated circuits |
JP4924617B2 (ja) * | 2009-01-05 | 2012-04-25 | ソニー株式会社 | 固体撮像素子、カメラ |
US8436423B2 (en) * | 2010-01-21 | 2013-05-07 | Roper Scientific, Inc. | Solid state back-illuminated photon sensor |
US8653434B2 (en) * | 2010-04-08 | 2014-02-18 | Bae Systems Information And Electronic Systems Integration Inc. | Avalanche photodiode operating voltage selection algorithm |
US8368159B2 (en) | 2011-07-08 | 2013-02-05 | Excelitas Canada, Inc. | Photon counting UV-APD |
JP2013098446A (ja) * | 2011-11-04 | 2013-05-20 | Sony Corp | 固体撮像素子、固体撮像素子の製造方法、及び、電子機器 |
US9490385B2 (en) | 2012-05-29 | 2016-11-08 | Hewlett Packard Enterprise Development Lp | Devices including independently controllable absorption region and multiplication region electric fields |
US9786702B2 (en) | 2012-09-20 | 2017-10-10 | Semiconductor Components Industries, Llc | Backside illuminated image sensors having buried light shields with absorptive antireflective coating |
US9041081B2 (en) | 2012-09-20 | 2015-05-26 | Semiconductor Components Industries, Llc | Image sensors having buried light shields with antireflective coating |
WO2014097519A1 (ja) * | 2012-12-18 | 2014-06-26 | パナソニック株式会社 | 半導体光検出器 |
JP5925711B2 (ja) * | 2013-02-20 | 2016-05-25 | 浜松ホトニクス株式会社 | 検出器、pet装置及びx線ct装置 |
JP6090060B2 (ja) * | 2013-08-23 | 2017-03-08 | 株式会社豊田中央研究所 | シングルフォトンアバランシェダイオード |
US9305952B2 (en) | 2013-08-27 | 2016-04-05 | Semiconductor Components Industries, Llc | Image sensors with inter-pixel light blocking structures |
KR102093343B1 (ko) | 2013-10-23 | 2020-03-25 | 삼성전자주식회사 | 이미지 센서 및 이미지 센서를 구동하는 방법 |
US9410901B2 (en) * | 2014-03-17 | 2016-08-09 | Kla-Tencor Corporation | Image sensor, an inspection system and a method of inspecting an article |
CN104362164A (zh) * | 2014-11-21 | 2015-02-18 | 北京思比科微电子技术股份有限公司 | 提高饱和容量的背照式图像传感器结构 |
DE102014119300A1 (de) * | 2014-12-19 | 2016-06-23 | Leica Microsystems Cms Gmbh | Verfahren zum Erhöhen des dynamischen Bereichs eines Silizium-Photomultipliers (SiPM) |
US9754981B2 (en) | 2015-06-05 | 2017-09-05 | General Electric Company | Solid state photomultiplier having an intermediate region coupled between high and low voltage regions and associated detector |
US11297258B2 (en) * | 2015-10-01 | 2022-04-05 | Qualcomm Incorporated | High dynamic range solid state image sensor and camera system |
CN109716525B (zh) * | 2016-09-23 | 2020-06-09 | 苹果公司 | 堆叠式背面照明spad阵列 |
JP2017005276A (ja) * | 2016-09-30 | 2017-01-05 | 株式会社豊田中央研究所 | シングルフォトンアバランシェダイオード |
EP3331034B1 (en) * | 2016-12-05 | 2022-02-02 | ams International AG | Radiation-hard high-speed photodiode device |
EP3574344B1 (en) | 2017-01-25 | 2024-06-26 | Apple Inc. | Spad detector having modulated sensitivity |
US10656251B1 (en) | 2017-01-25 | 2020-05-19 | Apple Inc. | Signal acquisition in a SPAD detector |
US10962628B1 (en) | 2017-01-26 | 2021-03-30 | Apple Inc. | Spatial temporal weighting in a SPAD detector |
EP3622561B1 (en) * | 2017-05-08 | 2022-06-15 | Vrije Universiteit Brussel | Detector for fast-gated detection of electromagnetic radiation |
JP6932580B2 (ja) * | 2017-08-04 | 2021-09-08 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
US11233966B1 (en) | 2018-11-29 | 2022-01-25 | Apple Inc. | Breakdown voltage monitoring for avalanche diodes |
JP2022084969A (ja) * | 2019-04-09 | 2022-06-08 | パナソニックIpマネジメント株式会社 | 光デバイス |
US11476372B1 (en) | 2020-05-13 | 2022-10-18 | Apple Inc. | SPAD-based photon detectors with multi-phase sampling TDCs |
CN112271233B (zh) * | 2020-09-25 | 2023-04-07 | 华东光电集成器件研究所 | 一种硅基背照pin器件结构的制备方法 |
US20240210529A1 (en) * | 2021-05-20 | 2024-06-27 | Sony Semiconductor Solutions Corporation | Photodetector and distance measurement apparatus |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5786615A (en) * | 1993-03-01 | 1998-07-28 | Seiko Instruments Inc. | Junction field-effect transistor (JFET) semiconductor integrated circuit device including JFET |
US20020024058A1 (en) * | 2000-08-16 | 2002-02-28 | Marshall Gillian F. | Photodetector circuit |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5596186A (en) * | 1993-12-08 | 1997-01-21 | Nikon Corporation | High sensitivity silicon avalanche photodiode |
US5798558A (en) * | 1995-06-27 | 1998-08-25 | Mission Research Corporation | Monolithic x-ray image detector and method of manufacturing |
FR2742878B1 (fr) | 1995-12-20 | 1998-01-16 | Commissariat Energie Atomique | Detecteur de rayonnements ionisants ultra-mince et procedes de realisation d'un tel detecteur |
US6204087B1 (en) * | 1997-02-07 | 2001-03-20 | University Of Hawai'i | Fabrication of three-dimensional architecture for solid state radiation detectors |
WO2000021280A1 (en) | 1998-10-07 | 2000-04-13 | California Institute Of Technology | Silicon-on-insulator (soi) active pixel sensors with the photosites implemented in the substrate |
US6285018B1 (en) * | 1999-07-20 | 2001-09-04 | Intevac, Inc. | Electron bombarded active pixel sensor |
WO2001082382A1 (en) * | 2000-04-20 | 2001-11-01 | Digirad Corporation | Fabrication of low leakage-current backside illuminated photodiodes |
-
2002
- 2002-07-11 GB GBGB0216075.2A patent/GB0216075D0/en not_active Ceased
-
2003
- 2003-07-03 CA CA002492696A patent/CA2492696A1/en not_active Abandoned
- 2003-07-03 US US10/520,849 patent/US7453131B2/en not_active Expired - Lifetime
- 2003-07-03 EP EP03763962A patent/EP1532686A2/en not_active Withdrawn
- 2003-07-03 JP JP2004520807A patent/JP4715203B2/ja not_active Expired - Lifetime
- 2003-07-03 WO PCT/GB2003/002851 patent/WO2004008537A2/en active Application Filing
- 2003-07-03 AU AU2003253098A patent/AU2003253098A1/en not_active Abandoned
- 2003-07-10 TW TW092118846A patent/TW200402146A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5786615A (en) * | 1993-03-01 | 1998-07-28 | Seiko Instruments Inc. | Junction field-effect transistor (JFET) semiconductor integrated circuit device including JFET |
US20020024058A1 (en) * | 2000-08-16 | 2002-02-28 | Marshall Gillian F. | Photodetector circuit |
Also Published As
Publication number | Publication date |
---|---|
CA2492696A1 (en) | 2004-01-22 |
GB0216075D0 (en) | 2002-08-21 |
US20050253132A1 (en) | 2005-11-17 |
TW200402146A (en) | 2004-02-01 |
JP2005532695A (ja) | 2005-10-27 |
US7453131B2 (en) | 2008-11-18 |
EP1532686A2 (en) | 2005-05-25 |
WO2004008537A3 (en) | 2004-09-23 |
AU2003253098A1 (en) | 2004-02-02 |
WO2004008537A2 (en) | 2004-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4715203B2 (ja) | 光検出器回路 | |
US6858912B2 (en) | Photodetector circuit | |
US6051857A (en) | Solid-state imaging device and method of detecting optical signals using the same | |
US7973377B2 (en) | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry | |
US7160753B2 (en) | Silicon-on-insulator active pixel sensors | |
US5430321A (en) | Photodiode structure | |
US6169318B1 (en) | CMOS imager with improved sensitivity | |
JP4127416B2 (ja) | 光センサ、光センサの作製方法、リニアイメージセンサ及びエリアセンサ | |
JP4037367B2 (ja) | 光検出器回路 | |
WO2000052765A1 (en) | Active pixel sensor with fully-depleted buried photoreceptor | |
KR101331992B1 (ko) | 실리콘 기판 및 실리콘 회로에 집적되는 고립된 게르마늄 광 검출기들을 포함하는 이미지 센서 | |
JP2000312024A (ja) | 受光素子及びそれを有する光電変換装置 | |
US8212327B2 (en) | High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme | |
TWI413246B (zh) | 在一互補式金氧半導體像素中之半島形傳送閘 | |
JP2009238985A (ja) | 半導体撮像素子およびその製造方法 | |
US20080017893A1 (en) | Back-lit image sensor | |
TWI286357B (en) | Photodetector circuits | |
US6228674B1 (en) | CMOS sensor and method of manufacture | |
CN114613795A (zh) | 用于红外图像传感器的新型像素结构及制作方法 | |
JP2000286443A (ja) | 受光素子及びそれを用いた光電変換装置 | |
Chiang et al. | High-gain photodetectors in thin-film transistors fabricated from laser-crystallized silicon on fused silica | |
JPS61285755A (ja) | 光電変換装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060703 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091124 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100223 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100302 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20100521 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100521 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20100521 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100524 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20100527 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100720 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110301 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110314 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4715203 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140408 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |