DE60322828D1 - Emitterschaltkonfiguration und entsprechende integrierte Struktur - Google Patents

Emitterschaltkonfiguration und entsprechende integrierte Struktur

Info

Publication number
DE60322828D1
DE60322828D1 DE60322828T DE60322828T DE60322828D1 DE 60322828 D1 DE60322828 D1 DE 60322828D1 DE 60322828 T DE60322828 T DE 60322828T DE 60322828 T DE60322828 T DE 60322828T DE 60322828 D1 DE60322828 D1 DE 60322828D1
Authority
DE
Germany
Prior art keywords
integrated structure
switching configuration
corresponding integrated
emitter switching
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60322828T
Other languages
English (en)
Inventor
Cesare Ronsisvalle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60322828D1 publication Critical patent/DE60322828D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0416—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/04166—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE60322828T 2003-01-31 2003-01-31 Emitterschaltkonfiguration und entsprechende integrierte Struktur Expired - Lifetime DE60322828D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03425056A EP1443649B1 (de) 2003-01-31 2003-01-31 Emitterschaltkonfiguration und entsprechende integrierte Struktur

Publications (1)

Publication Number Publication Date
DE60322828D1 true DE60322828D1 (de) 2008-09-25

Family

ID=32605502

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60322828T Expired - Lifetime DE60322828D1 (de) 2003-01-31 2003-01-31 Emitterschaltkonfiguration und entsprechende integrierte Struktur

Country Status (3)

Country Link
US (1) US7095084B2 (de)
EP (1) EP1443649B1 (de)
DE (1) DE60322828D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100648276B1 (ko) * 2004-12-15 2006-11-23 삼성전자주식회사 역방향 다이오드가 구비된 수직형 디모스 소자
US7466009B2 (en) 2006-06-05 2008-12-16 Texas Instruments Incorporated Method for reducing dislocation threading using a suppression implant
JP4424368B2 (ja) * 2007-04-18 2010-03-03 株式会社日立製作所 半導体装置およびそれを用いたプラズマディスプレイ駆動用半導体集積回路装置
JP5124533B2 (ja) * 2009-06-30 2013-01-23 株式会社日立製作所 半導体装置、それを用いたプラズマディスプレイ駆動用半導体集積回路装置、及びプラズマディスプレイ装置
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base
US9871510B1 (en) 2016-08-24 2018-01-16 Power Integrations, Inc. Clamp for a hybrid switch
TWI726515B (zh) * 2019-12-04 2021-05-01 台灣茂矽電子股份有限公司 瞬態電壓抑制二極體結構及其製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61112421A (ja) * 1984-11-06 1986-05-30 Mitsubishi Electric Corp バイポ−ラ・ダ−リントン・パワ−トランジスタの駆動回路
JPS61288616A (ja) * 1985-06-17 1986-12-18 Fuji Electric Co Ltd 半導体装置
EP0675584B1 (de) * 1994-03-29 1999-01-13 STMicroelectronics S.r.l. Leistungsendstufe mit begrenzter Stromsenkung während Hochimpedanzphase
DE69534839D1 (de) * 1995-07-31 2006-05-04 Sgs Thomson Microelectronics Schaltung zum gesteuerten unabhängigen Verbrauchen von gespeicherter induktiver Energie mehrerer induktiver Lasten
US6127723A (en) * 1998-01-30 2000-10-03 Sgs-Thomson Microelectronics, S.R.L. Integrated device in an emitter-switching configuration
EP0959562A1 (de) * 1998-05-21 1999-11-24 STMicroelectronics S.r.l. Schaltung zum Steuern des Schaltens einer Last mittels einer Emitterschaltvorrichtung
US6441445B1 (en) * 1998-10-06 2002-08-27 Stmicroelectronics S.R.L. Integrated device with bipolar transistor and electronic switch in “emitter switching” configuration
IT1309699B1 (it) * 1999-02-18 2002-01-30 St Microelectronics Srl Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switching

Also Published As

Publication number Publication date
US7095084B2 (en) 2006-08-22
US20040262696A1 (en) 2004-12-30
EP1443649A1 (de) 2004-08-04
EP1443649B1 (de) 2008-08-13

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Legal Events

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