DE60322828D1 - Emitterschaltkonfiguration und entsprechende integrierte Struktur - Google Patents
Emitterschaltkonfiguration und entsprechende integrierte StrukturInfo
- Publication number
- DE60322828D1 DE60322828D1 DE60322828T DE60322828T DE60322828D1 DE 60322828 D1 DE60322828 D1 DE 60322828D1 DE 60322828 T DE60322828 T DE 60322828T DE 60322828 T DE60322828 T DE 60322828T DE 60322828 D1 DE60322828 D1 DE 60322828D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated structure
- switching configuration
- corresponding integrated
- emitter switching
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0416—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/04166—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit in bipolar transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03425056A EP1443649B1 (de) | 2003-01-31 | 2003-01-31 | Emitterschaltkonfiguration und entsprechende integrierte Struktur |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60322828D1 true DE60322828D1 (de) | 2008-09-25 |
Family
ID=32605502
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60322828T Expired - Lifetime DE60322828D1 (de) | 2003-01-31 | 2003-01-31 | Emitterschaltkonfiguration und entsprechende integrierte Struktur |
Country Status (3)
Country | Link |
---|---|
US (1) | US7095084B2 (de) |
EP (1) | EP1443649B1 (de) |
DE (1) | DE60322828D1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100648276B1 (ko) * | 2004-12-15 | 2006-11-23 | 삼성전자주식회사 | 역방향 다이오드가 구비된 수직형 디모스 소자 |
US7466009B2 (en) | 2006-06-05 | 2008-12-16 | Texas Instruments Incorporated | Method for reducing dislocation threading using a suppression implant |
JP4424368B2 (ja) * | 2007-04-18 | 2010-03-03 | 株式会社日立製作所 | 半導体装置およびそれを用いたプラズマディスプレイ駆動用半導体集積回路装置 |
JP5124533B2 (ja) * | 2009-06-30 | 2013-01-23 | 株式会社日立製作所 | 半導体装置、それを用いたプラズマディスプレイ駆動用半導体集積回路装置、及びプラズマディスプレイ装置 |
US10553633B2 (en) * | 2014-05-30 | 2020-02-04 | Klaus Y.J. Hsu | Phototransistor with body-strapped base |
US9871510B1 (en) | 2016-08-24 | 2018-01-16 | Power Integrations, Inc. | Clamp for a hybrid switch |
TWI726515B (zh) * | 2019-12-04 | 2021-05-01 | 台灣茂矽電子股份有限公司 | 瞬態電壓抑制二極體結構及其製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61112421A (ja) * | 1984-11-06 | 1986-05-30 | Mitsubishi Electric Corp | バイポ−ラ・ダ−リントン・パワ−トランジスタの駆動回路 |
JPS61288616A (ja) * | 1985-06-17 | 1986-12-18 | Fuji Electric Co Ltd | 半導体装置 |
EP0675584B1 (de) * | 1994-03-29 | 1999-01-13 | STMicroelectronics S.r.l. | Leistungsendstufe mit begrenzter Stromsenkung während Hochimpedanzphase |
DE69534839D1 (de) * | 1995-07-31 | 2006-05-04 | Sgs Thomson Microelectronics | Schaltung zum gesteuerten unabhängigen Verbrauchen von gespeicherter induktiver Energie mehrerer induktiver Lasten |
US6127723A (en) * | 1998-01-30 | 2000-10-03 | Sgs-Thomson Microelectronics, S.R.L. | Integrated device in an emitter-switching configuration |
EP0959562A1 (de) * | 1998-05-21 | 1999-11-24 | STMicroelectronics S.r.l. | Schaltung zum Steuern des Schaltens einer Last mittels einer Emitterschaltvorrichtung |
US6441445B1 (en) * | 1998-10-06 | 2002-08-27 | Stmicroelectronics S.R.L. | Integrated device with bipolar transistor and electronic switch in “emitter switching” configuration |
IT1309699B1 (it) * | 1999-02-18 | 2002-01-30 | St Microelectronics Srl | Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switching |
-
2003
- 2003-01-31 EP EP03425056A patent/EP1443649B1/de not_active Expired - Lifetime
- 2003-01-31 DE DE60322828T patent/DE60322828D1/de not_active Expired - Lifetime
-
2004
- 2004-01-30 US US10/769,563 patent/US7095084B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20040262696A1 (en) | 2004-12-30 |
EP1443649A1 (de) | 2004-08-04 |
EP1443649B1 (de) | 2008-08-13 |
US7095084B2 (en) | 2006-08-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |