CN104969355B - Esd自我保护及含该保护的lin总线驱动器的dmos半导体装置 - Google Patents

Esd自我保护及含该保护的lin总线驱动器的dmos半导体装置 Download PDF

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Publication number
CN104969355B
CN104969355B CN201480006578.6A CN201480006578A CN104969355B CN 104969355 B CN104969355 B CN 104969355B CN 201480006578 A CN201480006578 A CN 201480006578A CN 104969355 B CN104969355 B CN 104969355B
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diffusion
well
protection circuit
gate
drain
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CN104969355A (zh
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菲利普·德沃尔
马丽亚·费尔南德斯
帕特里克·贝萨厄泽
罗恩·布雷思韦特
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Microchip Technology Inc
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Microchip Technology Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
CN201480006578.6A 2013-01-30 2014-01-29 Esd自我保护及含该保护的lin总线驱动器的dmos半导体装置 Active CN104969355B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361758590P 2013-01-30 2013-01-30
US61/758,590 2013-01-30
PCT/US2014/013671 WO2014120824A1 (en) 2013-01-30 2014-01-29 Dmos semiconductor device with esd self-protection and lin bus driver comprising the same

Publications (2)

Publication Number Publication Date
CN104969355A CN104969355A (zh) 2015-10-07
CN104969355B true CN104969355B (zh) 2018-02-13

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US (1) US9607978B2 (enExample)
EP (1) EP2951865B1 (enExample)
JP (1) JP6255421B2 (enExample)
KR (1) KR20150114982A (enExample)
CN (1) CN104969355B (enExample)
TW (1) TWI614871B (enExample)
WO (1) WO2014120824A1 (enExample)

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KR102633136B1 (ko) 2019-01-10 2024-02-02 삼성전자주식회사 집적회로 칩과 이를 포함하는 집적회로 패키지 및 디스플레이 장치
CN109935581B (zh) * 2019-02-25 2021-04-13 中国科学院微电子研究所 双向可控硅静电放电保护结构及soi结构
CN109935582B (zh) * 2019-02-25 2021-04-06 中国科学院微电子研究所 双向可控硅静电放电保护结构及soi结构
CN109962098A (zh) * 2019-02-25 2019-07-02 中国科学院微电子研究所 双向可控硅静电放电保护结构及soi结构
JP7268408B2 (ja) 2019-03-06 2023-05-08 ユナイテッド・セミコンダクター・ジャパン株式会社 半導体装置及びその製造方法
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KR102887191B1 (ko) 2020-04-16 2025-11-17 삼성디스플레이 주식회사 표시 장치
CN111384046A (zh) * 2020-04-27 2020-07-07 上海华力微电子有限公司 一种硅控整流器及其制造方法
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Also Published As

Publication number Publication date
JP2016508671A (ja) 2016-03-22
JP6255421B2 (ja) 2017-12-27
WO2014120824A1 (en) 2014-08-07
KR20150114982A (ko) 2015-10-13
EP2951865B1 (en) 2020-03-25
EP2951865A1 (en) 2015-12-09
TWI614871B (zh) 2018-02-11
CN104969355A (zh) 2015-10-07
US9607978B2 (en) 2017-03-28
US20140210007A1 (en) 2014-07-31
TW201444051A (zh) 2014-11-16

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