JP6255421B2 - Ｅｓｄ自己保護を有するｄｍｏｓ半導体デバイスおよびそれを備えたｌｉｎバスドライバ - Google Patents

Ｅｓｄ自己保護を有するｄｍｏｓ半導体デバイスおよびそれを備えたｌｉｎバスドライバ Download PDF

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JP6255421B2
JP6255421B2 JP2015555433A JP2015555433A JP6255421B2 JP 6255421 B2 JP6255421 B2 JP 6255421B2 JP 2015555433 A JP2015555433 A JP 2015555433A JP 2015555433 A JP2015555433 A JP 2015555433A JP 6255421 B2 JP6255421 B2 JP 6255421B2
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diffusion
output driver
driver cell
well
open drain
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JP2016508671A (ja
JP2016508671A5 (enExample
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フィリップ ドゥバル，
フィリップ ドゥバル，
マリヤ フェルナンデス，
マリヤ フェルナンデス，
パトリック ベスー，
パトリック ベスー，
ローハン ブライトワイテ，
ローハン ブライトワイテ，
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Microchip Technology Inc
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Microchip Technology Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2015555433A 2013-01-30 2014-01-29 Ｅｓｄ自己保護を有するｄｍｏｓ半導体デバイスおよびそれを備えたｌｉｎバスドライバ Active JP6255421B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361758590P 2013-01-30 2013-01-30
US61/758,590 2013-01-30
PCT/US2014/013671 WO2014120824A1 (en) 2013-01-30 2014-01-29 Dmos semiconductor device with esd self-protection and lin bus driver comprising the same

Publications (3)

Publication Number Publication Date
JP2016508671A JP2016508671A (ja) 2016-03-22
JP2016508671A5 JP2016508671A5 (enExample) 2017-03-02
JP6255421B2 true JP6255421B2 (ja) 2017-12-27

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US (1) US9607978B2 (enExample)
EP (1) EP2951865B1 (enExample)
JP (1) JP6255421B2 (enExample)
KR (1) KR20150114982A (enExample)
CN (1) CN104969355B (enExample)
TW (1) TWI614871B (enExample)
WO (1) WO2014120824A1 (enExample)

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CN109962098A (zh) * 2019-02-25 2019-07-02 中国科学院微电子研究所 双向可控硅静电放电保护结构及soi结构
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Publication number Publication date
JP2016508671A (ja) 2016-03-22
CN104969355B (zh) 2018-02-13
WO2014120824A1 (en) 2014-08-07
KR20150114982A (ko) 2015-10-13
EP2951865B1 (en) 2020-03-25
EP2951865A1 (en) 2015-12-09
TWI614871B (zh) 2018-02-11
CN104969355A (zh) 2015-10-07
US9607978B2 (en) 2017-03-28
US20140210007A1 (en) 2014-07-31
TW201444051A (zh) 2014-11-16

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