JP2016508671A5 - - Google Patents
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- Publication number
- JP2016508671A5 JP2016508671A5 JP2015555433A JP2015555433A JP2016508671A5 JP 2016508671 A5 JP2016508671 A5 JP 2016508671A5 JP 2015555433 A JP2015555433 A JP 2015555433A JP 2015555433 A JP2015555433 A JP 2015555433A JP 2016508671 A5 JP2016508671 A5 JP 2016508671A5
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- output driver
- driver cell
- open drain
- drain output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 claims description 159
- 239000002184 metal Substances 0.000 claims description 12
- 230000000903 blocking effect Effects 0.000 claims description 8
- 239000006185 dispersion Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 210000000746 body region Anatomy 0.000 claims description 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361758590P | 2013-01-30 | 2013-01-30 | |
| US61/758,590 | 2013-01-30 | ||
| PCT/US2014/013671 WO2014120824A1 (en) | 2013-01-30 | 2014-01-29 | Dmos semiconductor device with esd self-protection and lin bus driver comprising the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016508671A JP2016508671A (ja) | 2016-03-22 |
| JP2016508671A5 true JP2016508671A5 (enExample) | 2017-03-02 |
| JP6255421B2 JP6255421B2 (ja) | 2017-12-27 |
Family
ID=50102256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015555433A Active JP6255421B2 (ja) | 2013-01-30 | 2014-01-29 | Esd自己保護を有するdmos半導体デバイスおよびそれを備えたlinバスドライバ |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9607978B2 (enExample) |
| EP (1) | EP2951865B1 (enExample) |
| JP (1) | JP6255421B2 (enExample) |
| KR (1) | KR20150114982A (enExample) |
| CN (1) | CN104969355B (enExample) |
| TW (1) | TWI614871B (enExample) |
| WO (1) | WO2014120824A1 (enExample) |
Families Citing this family (33)
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| JP6063677B2 (ja) * | 2012-09-06 | 2017-01-18 | ローム株式会社 | 信号検出回路及びイグナイタ |
| DE102015204924B4 (de) * | 2015-03-18 | 2022-05-25 | Röchling Automotive SE & Co. KG | LIN-Netzwerk |
| US9831340B2 (en) * | 2016-02-05 | 2017-11-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and associated fabricating method |
| US10498326B2 (en) * | 2016-03-01 | 2019-12-03 | Texas Instruments Incorporated | Output driver with power down protection |
| JP6740831B2 (ja) * | 2016-09-14 | 2020-08-19 | 富士電機株式会社 | 半導体装置 |
| US9613948B1 (en) * | 2016-09-22 | 2017-04-04 | United Microelectronics Corp. | Electrostatic discharge protection semiconductor device |
| KR102166618B1 (ko) * | 2016-09-26 | 2020-10-16 | 온세미컨덕터코리아 주식회사 | 정전기 방전 회로 및 그 제조 방법 |
| US10600776B2 (en) * | 2017-02-24 | 2020-03-24 | Nxp B.V. | Device and method for electrostatic discharge (ESD) protection |
| WO2019005081A1 (en) * | 2017-06-29 | 2019-01-03 | Intel Corporation | GROUP III NITRIDE TRANSISTOR STRUCTURE WITH INTEGRATED DIODE |
| US10861844B2 (en) * | 2017-08-07 | 2020-12-08 | Texas Instruments Incorporated | ESD device with fast response and high transient current |
| US10453836B2 (en) * | 2017-08-17 | 2019-10-22 | Globalfoundries Singapore Pte. Ltd. | High holding high voltage (HHHV) FET for ESD protection with modified source and method for producing the same |
| TWI777971B (zh) | 2017-08-28 | 2022-09-21 | 聯華電子股份有限公司 | 雙極性電晶體及其製作方法 |
| WO2019066972A1 (en) | 2017-09-29 | 2019-04-04 | Intel Corporation | GROUP III NITRIDE SCHOTTKY DIODES |
| DE112017007912T5 (de) | 2017-09-29 | 2020-07-02 | Intel Corporation | Gruppe-iii-nitrid-antennendiode |
| US10340266B2 (en) * | 2017-10-02 | 2019-07-02 | Globalfoundries Singapore Pte. Ltd. | ESD protection circuit and method of making the same |
| HK1244177A2 (zh) * | 2018-03-27 | 2018-07-27 | 蒙若贤 | 用於沟道型dmos的集成堆叠在沟道中的防静电网络 |
| CN109742071B (zh) * | 2019-01-07 | 2021-04-13 | 中国科学院微电子研究所 | 一种soi功率开关的esd保护器件 |
| CN109786374B (zh) * | 2019-01-07 | 2021-07-13 | 中国科学院微电子研究所 | 一种soi功率开关的esd保护器件 |
| KR102633136B1 (ko) | 2019-01-10 | 2024-02-02 | 삼성전자주식회사 | 집적회로 칩과 이를 포함하는 집적회로 패키지 및 디스플레이 장치 |
| CN109935581B (zh) * | 2019-02-25 | 2021-04-13 | 中国科学院微电子研究所 | 双向可控硅静电放电保护结构及soi结构 |
| CN109935582B (zh) * | 2019-02-25 | 2021-04-06 | 中国科学院微电子研究所 | 双向可控硅静电放电保护结构及soi结构 |
| CN109962098A (zh) * | 2019-02-25 | 2019-07-02 | 中国科学院微电子研究所 | 双向可控硅静电放电保护结构及soi结构 |
| JP7268408B2 (ja) | 2019-03-06 | 2023-05-08 | ユナイテッド・セミコンダクター・ジャパン株式会社 | 半導体装置及びその製造方法 |
| CN110289257B (zh) * | 2019-06-28 | 2021-09-14 | 湖南师范大学 | 一种双向增强型栅控可控硅静电保护器件及其制作方法 |
| KR102887191B1 (ko) | 2020-04-16 | 2025-11-17 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN111384046A (zh) * | 2020-04-27 | 2020-07-07 | 上海华力微电子有限公司 | 一种硅控整流器及其制造方法 |
| US10938387B1 (en) | 2020-06-24 | 2021-03-02 | Cypress Semiconductor Corporation | Local interconnect network (LIN) driver circuit |
| CN113345964B (zh) * | 2021-05-17 | 2022-05-10 | 杰华特微电子股份有限公司 | 一种横向双扩散晶体管 |
| KR102820470B1 (ko) * | 2021-05-21 | 2025-06-16 | 삼성전자주식회사 | 반도체 보호 소자 |
| TWI775688B (zh) * | 2021-11-29 | 2022-08-21 | 世界先進積體電路股份有限公司 | 靜電放電防護結構 |
| US12057444B2 (en) * | 2022-06-23 | 2024-08-06 | Globalfoundries U.S. Inc. | Operating voltage-triggered semiconductor controlled rectifier |
| US20240170531A1 (en) * | 2022-11-17 | 2024-05-23 | Globalfoundries U.S. Inc. | Structure with buried doped region and methods to form same |
| US20240332283A1 (en) * | 2023-03-28 | 2024-10-03 | Infineon Technologies Ag | ESD Protection Device |
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| JPS51156742U (enExample) * | 1975-06-09 | 1976-12-14 | ||
| US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
| EP0210173B1 (en) * | 1984-05-02 | 1990-08-16 | Alcatel N.V. | Semiconductor device and arrangement |
| US4947226A (en) * | 1987-12-08 | 1990-08-07 | Hoenywell, Inc. | Bilateral switching device |
| JPH06334131A (ja) * | 1993-05-27 | 1994-12-02 | Hitachi Ltd | 半導体集積回路装置 |
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| JP4471480B2 (ja) * | 2000-10-18 | 2010-06-02 | 三菱電機株式会社 | 半導体装置 |
| US20020076876A1 (en) * | 2000-12-15 | 2002-06-20 | Ming-Dou Ker | Method for manufacturing semiconductor devices having ESD protection |
| JP2002198438A (ja) * | 2000-12-26 | 2002-07-12 | Toshiba Corp | パワーmosトランジスタ |
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| US6465308B1 (en) * | 2001-05-24 | 2002-10-15 | Taiwan Semiconductor Manufacturing Company | Tunable threshold voltage of a thick field oxide ESD protection device with a N-field implant |
| JP3824310B2 (ja) * | 2002-01-18 | 2006-09-20 | ローム株式会社 | 二重拡散型mosfetおよびこれを用いた半導体装置 |
| AU2003278522A1 (en) * | 2002-11-25 | 2004-06-18 | Koninklijke Philips Electronics N.V. | Method and circuit arrangement for esd protection of a connection terminal |
| TWI263311B (en) * | 2003-12-22 | 2006-10-01 | Vanguard Int Semiconduct Corp | High-voltage device structure having high endurance capability of ESD |
| US8890248B2 (en) * | 2004-08-26 | 2014-11-18 | Texas Instruments Incorporation | Bi-directional ESD protection circuit |
| US7446990B2 (en) * | 2005-02-11 | 2008-11-04 | Freescale Semiconductor, Inc. | I/O cell ESD system |
| JP4864344B2 (ja) * | 2005-05-16 | 2012-02-01 | パナソニック株式会社 | 半導体装置 |
| KR100628250B1 (ko) * | 2005-09-28 | 2006-09-27 | 동부일렉트로닉스 주식회사 | 전력용 반도체 소자 및 그의 제조방법 |
| US7402846B2 (en) * | 2005-10-20 | 2008-07-22 | Atmel Corporation | Electrostatic discharge (ESD) protection structure and a circuit using the same |
| JP5108250B2 (ja) * | 2006-04-24 | 2012-12-26 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
| JP4616856B2 (ja) * | 2007-03-27 | 2011-01-19 | 株式会社日立製作所 | 半導体装置、及び半導体装置の製造方法 |
| US7719026B2 (en) * | 2007-04-11 | 2010-05-18 | Fairchild Semiconductor Corporation | Un-assisted, low-trigger and high-holding voltage SCR |
| US7843002B2 (en) * | 2007-07-03 | 2010-11-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fully isolated high-voltage MOS device |
| TW200905860A (en) * | 2007-07-31 | 2009-02-01 | Amazing Microelectroing Corp | Symmetric type bi-directional silicon control rectifier |
| US8018000B2 (en) * | 2008-01-11 | 2011-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrostatic discharge protection pattern for high voltage applications |
| JP5515248B2 (ja) * | 2008-03-26 | 2014-06-11 | 富士電機株式会社 | 半導体装置 |
| US8283727B1 (en) * | 2008-05-02 | 2012-10-09 | Cypress Semiconductor Corporation | Circuit with electrostatic discharge protection |
| JP2010010264A (ja) * | 2008-06-25 | 2010-01-14 | Denso Corp | 半導体装置 |
| JP5172654B2 (ja) * | 2008-12-27 | 2013-03-27 | 株式会社東芝 | 半導体装置 |
| JP5460279B2 (ja) * | 2009-12-11 | 2014-04-02 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| CN101826523B (zh) * | 2010-04-14 | 2012-04-25 | 电子科技大学 | 一种栅控二极管触发的可控硅整流式静电释放保护电路结构 |
| US8519434B2 (en) * | 2011-03-22 | 2013-08-27 | Macronix International Co., Ltd. | Self detection device for high voltage ESD protection |
| WO2013013035A1 (en) | 2011-07-21 | 2013-01-24 | Microchip Technology Incorporated | Multi-channel homogenous path for enhanced mutual triggering of electrostatic discharge fingers |
| US8848325B2 (en) * | 2012-02-21 | 2014-09-30 | Macronix International Co., Ltd. | High voltage semiconductor element and operating method thereof |
| US9559170B2 (en) * | 2012-03-01 | 2017-01-31 | X-Fab Semiconductor Foundries Ag | Electrostatic discharge protection devices |
| US9293460B2 (en) * | 2012-08-24 | 2016-03-22 | Texas Instruments Incorporated | ESD protection device with improved bipolar gain using cutout in the body well |
| WO2014041388A1 (en) * | 2012-09-12 | 2014-03-20 | Freescale Semiconductor, Inc. | A semiconductor device and an integrated circuit comprising an esd protection device, esd protection devices and a method of manufacturing the semiconductor device |
| US8963253B2 (en) * | 2012-10-23 | 2015-02-24 | Macronix International Co., Ltd. | Bi-directional bipolar junction transistor for high voltage electrostatic discharge protection |
| US8664690B1 (en) * | 2012-11-15 | 2014-03-04 | Macronix International Co., Ltd. | Bi-directional triode thyristor for high voltage electrostatic discharge protection |
-
2014
- 2014-01-29 KR KR1020157023604A patent/KR20150114982A/ko not_active Ceased
- 2014-01-29 JP JP2015555433A patent/JP6255421B2/ja active Active
- 2014-01-29 CN CN201480006578.6A patent/CN104969355B/zh active Active
- 2014-01-29 WO PCT/US2014/013671 patent/WO2014120824A1/en not_active Ceased
- 2014-01-29 US US14/167,331 patent/US9607978B2/en active Active
- 2014-01-29 EP EP14704489.5A patent/EP2951865B1/en active Active
- 2014-02-05 TW TW103103821A patent/TWI614871B/zh active
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