CN104685095A - 用于制造太阳能电池的双掩模装置 - Google Patents

用于制造太阳能电池的双掩模装置 Download PDF

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CN104685095A
CN104685095A CN201380026127.4A CN201380026127A CN104685095A CN 104685095 A CN104685095 A CN 104685095A CN 201380026127 A CN201380026127 A CN 201380026127A CN 104685095 A CN104685095 A CN 104685095A
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CN104685095B (zh
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T·布卢克
I·拉奇福特
V·沙阿
A·里波萨恩
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Abstract

用于在处理期间支撑基片的装置，其具有晶片承载器，所述晶片承载器具有用于支撑基片并将基片限制到预定位置的基座。内掩模被构造用于放置在基片的顶部上，所述内掩模具有用于掩蔽基片的未被处理的部分、但暴露基片的剩余部分以用于处理的开口图案。外掩模被构造用于放置在内掩模的顶部上，所述外掩模具有暴露内掩模的具有所述开口图案的那部分、但覆盖内掩模的外周的开口。

Description

用于制造太阳能电池的双掩模装置
相关申请
本申请要求享有2012年4月19日提交的美国临时申请序列号61/635,804和2012年4月26日提交的美国临时申请序列号61/639,052的优先权益，这些申请的全部公开内容通过引用被合并于此。
技术领域
本申请涉及掩蔽制造，诸如在太阳能电池的制造中利用掩模的掩蔽制造。
背景技术
在太阳能电池的各个制造阶段期间，可能期望的是使用掩模以便遮挡太阳能电池的一些部分免受特定的制造过程。例如，掩模可以被用于触点的形成或用于边缘排除以便防止电池的分流(shunting)。也即，对于在正面和背面上具有触点的电池来说，用于形成触点的材料可能被沉积在晶片的边缘上并且分流该正面和背面触点。因此，至少在该正面或背面触点的制造期间使用掩模来排除电池的边缘是可取的。
如同另一例证，对于硅太阳能电池的制造而言，在背表面上沉积覆层金属(blanket metal)以充当反光镜和电导体是值得期望的。该金属通常为铝，但该覆层金属可以是出于多个理由(诸如成本、传导性、可焊性、等等)而被使用的任何金属。沉积的膜厚度可以从非常薄(例如，大约10nm)到高达非常厚(例如，2-3um)。然而，有必要防止覆层金属包裹在硅晶片的边缘周围，因为这将产生太阳能电池的前表面和后表面之间的阻性连接，即，分流。为防止这种连接，晶片背面边缘上的排除区域可以被形成。该排除区域的典型尺度为小于2mm宽，但优选是尽可能细地形成该排除区域。
产生该排除区域的一种方法是通过使用掩模；然而，利用掩模有着很多挑战。由于太阳能产业的高度竞争的性质，掩模必须制造起来很便宜。而且，由于太阳能制造装备的高产出量(通常每小时1500-2500件电池)，掩模必须在高产量的制造中使用起来快速而容易。而且，由于掩模是被用来防止膜沉积在晶片的某些部分上的，因此其必须能够吸收和容纳沉积物积累。此外，由于膜沉积是在升高的温度下完成的，因此该掩模必须能够在升高的温度下(例如，高达350℃)正确地发挥作用，同时仍能精确地维持排除区域的宽度，同时适应因热应力而致的基片翘曲。
发明内容
下列发明内容被包括以便提供对本发明的一些方面和特征的基本理解。此发明内容不是对本发明的宽泛概述，并且同样地，其并不意在特别地识别本发明的关键或关键性要素、或者描绘本发明的范围。其唯一的目的是作为在下面呈现的更详细说明的序言而以简化的形式呈现本发明的一些概念。
本发明的各实施方式通过使用双掩模装置而解决了使用掩模的以上问题。两部分式掩蔽系统被构造用于掩蔽半导体晶片，并且包括：内掩模，其由平坦的金属片构成，所述金属片具有暴露晶片的将被处理的一些部分的孔口；和，外掩模，其被构造用于放置在所述内掩模上面并掩蔽所述内掩模，所述外掩模具有尺寸和形状类似于晶片的尺寸和形状的敞开式切口，所述外掩模具有大于所述内掩模厚度的厚度。掩模框架可以被构造成支撑所述内掩模和外掩模，使得所述外掩模被夹在所述掩模框架和所述内掩模之间。在其中所述双掩模装置被用于边缘隔离的一个实例中，所述内掩模中的敞开式切口具有略小于晶片的尺寸，使得当所述内掩模被置于晶片上时，所述内掩模覆盖晶片的外周边缘，并且所述外掩模中的敞开式切口略小于所述内掩模中的敞开式切口。顶部框架承载器可以被用来保持所述内掩模和外掩模并且使所述内掩模和外掩模固定至所述晶片基座。
上掩模或外掩模可以由薄的(例如，大约0.03”)铝、钢或其它类似材料制成，并且被构造成与基片承载器配合。内掩模由非常薄的(例如，大约0.001到0.003”)平坦钢片、或其它磁性材料制成，并且被构造成被嵌套在所述外掩模内。
根据另外的实施方式，提供了用于在处理期间支撑晶片的装置，其包括：晶片承载器或基座，其具有凸起式框架，所述凸起式框架具有用于在晶片外周的周围支撑晶片并将晶片限制至预定位置的凹部；内掩模，其被构造用于放置在所述凸起式框架的顶部上，所述内掩模具有孔口配置，所述孔口配置被构造成掩蔽晶片的一部分并暴露晶片的剩余部分；以及，外掩模，其被构造用于放置在所述凸起式框架上面在所述内掩模的顶部上，所述外掩模具有被构造成部分地覆盖所述内掩模的单一开口。顶部框架承载器可以被用来保持所述内掩模和外掩模并且使所述内掩模和外掩模固定至所述晶片基座。
复数个磁体被设置在所述基座中并且完全在所述框架周围或者完全在所述基座的整个表面的下方并且直接在晶片下面以N-S-N-S-N的极性交替。所述外掩模和内掩模被设计成仅通过磁性力而被保持至所述框架，以便允许容易和快速地装载和卸载基片。
掩模组件可从所述晶片承载器和支撑框架移除以便将基片装载至所述承载器中。所述外掩模和内掩模都作为所述掩模组件的一部分而被升起。一旦晶片位于所述承载器上在所述晶片凹穴中，所述掩模组件就被向下降回到所述承载器上。所述内掩模叠盖住所述晶片的顶表面。所述承载器框架中的各磁体将所述内掩模向下牵引至与所述基片密切接触。这在晶片的边缘上形成了紧密的顺应性密封。所述外掩模被设计为防止在薄的顺应性内掩模上沉积。如上面所阐明的，沉积过程可能导致内掩模发热，从而导致该掩模翘曲且松开与晶片的接触。如果该掩模松开与晶片的接触，那么金属膜将沉积在基片晶片的表面上的排除区域中。所述凹穴和由各磁体产生的摩擦力保持着所述基片和掩模免于在传输和沉积期间相对于彼此运动，并且所述外掩模防止膜沉积在所述内掩模上并防止所述内掩模翘曲。
所述掩模组件可通过使用真空承载器交换器而从具有所述承载器的系统中被周期性地移除。所述承载器交换器为具有承载器传输机构的便携式真空外壳。其允许各承载器“在运行中(on the fly)”被交换，而无需停下该系统的连续操作。
附图说明
被并入本说明书且构成本说明书的一部分的附图，例证了本发明的各实施方式，并且与本说明书一起，用来解释和示出本发明的原理。这些图意在以图解的方式示出各示例性实施方式的主要特征。这些图不意在描绘各实际实施方式的每个特征及所描绘的元件的相对尺寸，并且未按比例绘制。
图1示出了根据一个实施方式的多晶片承载器，其并非被构造用于掩模处理。
图2A-2E示出了根据各个实施方式的具有用于双掩模的装置的多晶片承载器的视图。
图3示出了外掩模的实施方式，内掩模被嵌套在其中。
图4为根据一个实施方式的框架、外掩模和内掩模的放大部分的截面。
图4A示出了另一实施方式，其可被用于例如在晶片的背面上形成触点图案。
图5示出了用于在边缘隔离中使用的内掩模的实施方式。
图6示出了单一晶片承载器的实施方式。
图7示出了外掩模的实施方式，该图是从下侧观察的。
图8示出了用于支撑内掩模和外掩模的顶部框架的实施方式。
图9示出了用于在晶片中产生多个孔的内掩模的实施方式。
图10示出了用于与图9的掩模一起使用的基座的实施方式。
图10A示出了呈具有弹簧加载的对正销的静电卡盘形式的基座的实施方式。
具体实施方式
尽管在传统的半导体制造中各晶片通常被独立地处理，但在太阳能制造中多个晶片被同时地制造。为简单起见，下面将针于三个晶片的同时处理进行描述；然而，应意识到的是，各实施方式可以扩展至被同时处理的任何数目的晶片。
图1示出了根据一个实施方式的多晶片承载器，其并非被构造用于掩模处理。也即，在太阳能电池的制造中，一些处理步骤不需要对晶片进行掩蔽。在这些情况中，图1的承载器可以被使用。实现双掩模装置的承载器将在下面参照其余各图进行描述。因此，在各个实施方式中，不需要掩蔽的处理步骤将使用图1的承载器被执行，而需要掩蔽的处理步骤将使用诸如其余各图中所示的那些承载器被执行。如图1中所示，根据该实施方式的多晶片承载器的结构相当简单和廉价。尽管在图1中该承载器被显示为被构造用于传输三个晶片，但应意识到的是该承载器可以被构造用于不同数目的晶片。而且，应意识到的是每个处理室可以被构造成同时容纳若干个承载器，从而同时地处理多个承载器上的多个晶片。
图1的承载器100由形成基座(susceptor)105的简单的板构成，所述基座例如由氮化铝制成，所述基座由陶瓷框架或陶瓷条110支撑。陶瓷框架110改善了基座105从该室的剩余部分的热绝缘。在每个晶片120的下方设置一个升降器板115，使得晶片可以被从基座105升起。传输轨道125被设置在框架110的每一侧上，以便使能够贯穿该系统传输承载器。
当对晶片的处理需要使用掩模时，各掩模可以被单独地放置在每个晶片的顶部上，或者可以形成一个掩模以便同时覆盖所有的三个晶片。掩模可以例如利用磁体被保持在位。然而，为了精确的处理，掩模必须被制得非常薄，并且因此在处理期间可能由于热应力而变形。此外，薄的掩模可能迅速地收集沉积物并且该沉积物可能妨碍掩模的精确放置和掩蔽。因此，使用根据下述各实施方式的双掩模装置将是有利的。
图2A-2E示出了根据各个实施方式的具有用于双掩模的装置的多晶片承载器的视图。图2A示出了具有双掩模装置的多晶片承载器，其中该掩模装置处于降下的位置使得内掩模处于与晶片的密切物理接触；图2B示出了具有双掩模装置的多晶片承载器，其中该掩模装置处于升高的位置从而使得能够更换晶片；图2C示出了具有双掩模装置的多晶片承载器，其中晶片升降器被包括以用于装载/卸载晶片；图2D示出了具有双掩模装置的多晶片承载器的局部截面，其中该掩模装置和晶片升降器处于升高的位置；并且图2E示出了具有双掩模装置的多晶片承载器的局部截面，其中该掩模装置和晶片升降器处于降下的位置。
参照图2A，多晶片承载器，也被称作承载器支座200，具有三个单独的单晶片承载器或基座105，它们通过例如由陶瓷制成的基座框架或复数个条110被支撑。每个单晶片承载器105被构造用于将单一晶片与双掩模装置保持在一起。在图2A中，双掩模装置处于被降下的位置中，但没有晶片被置于任一个承载器中，以便暴露承载器的结构。在图2B中，双掩模装置被显示处于被升起的位置中，同样没有晶片处于任一个承载器中。在图2A-2E的实施方式中，升降器215被用来升起和降下双掩模装置；然而，为了较低的成本和较少的复杂性，升降器215可以被取消并且双掩模装置可以被手动地升起。如在图1中一样，传输轨道225被设置在框架210的每一侧上，以便使得能够贯穿该系统传输承载器200。
单晶片承载器205中的每一个具有基部230(在图2B中可见)，该基部具有带凹部235的凸起式框架232以便支撑通过外周而被悬置的晶片。带有框架232的基部230形成位于悬置的晶片下方的凹穴240，该凹穴有利于俘获破碎的晶片碎块。在一些实施方式中，框架232可从基部230分离。外掩模245被构造成被安装在框架232上，以便覆盖框架232并覆盖内掩模的外周，但暴露内掩模的与晶片相对应的中央部分。这通过图4的实施方式中的截面图被例证。
在图4中，基部或基座405具有带凹部432的凸起式框架430，其在晶片的外周处支撑着晶片420。带有框架430的基部405形成凹穴440，并且晶片被悬置在凹穴上方。一系列磁体434被定位在凸起式框架430内部，以便环绕晶片420的外周。在一些实施方式中，尤其是用于高温操作的实施方式中，磁体434可以由钐钴(SmCo)制成。内掩模450被定位在凸起式框架430和晶片420的顶部上，并且由各磁体434保持在位，使得其物理接触晶片。外掩模445被放置在内掩模450上面并且物理接触内掩模450，使得其覆盖内掩模450的外周，除了内掩模的被设计用于对晶片进行处理的那个区域以外。外掩模245的实例被示于图3中，在本实例中外掩模由折叠的铝片制成，其中内掩模除了小的外周边缘452以外被外掩模覆盖，因为本实例是用于边缘分流隔离处理的。用于边缘分流隔离的内掩模的实例在图5中被示出，其基本上是具有孔口的平坦金属片，该孔口的尺寸和形状如同晶片的尺寸和形状，除了其比晶片的尺寸略小(例如小1-2mm)以外。在图4的实施方式中，掩模框架436被设置成使能够支撑内掩模和外掩模并从承载器升起内掩模和外掩模。在这种构造中，外掩模被夹在掩模框架436和内掩模450之间。
图4A示出了另一实施方式，其可被用于例如在晶片的背面上形成触点图案。在本实施方式中，基座形成顶部平台以在晶片的整个表面上支撑晶片。各磁体434被埋置在基座顶表面的下方遍布基座的整个区域。内掩模450覆盖晶片420的整个表面并且根据触点设计而具有多个孔。
转回至图2A-2E，升降器215可以被用来将外掩模连同内掩模一起举起。而且，晶片升降器252可以被用来将晶片从框架230升起，使得该晶片可以使用机械臂而被用于处理的新晶片所代替。然而，升降器215和252可以被取消并且升起各掩模以及更换晶片的操作可以改为被手动地完成。
在上面参照图4所描述的实施方式中，承载器在晶片的外周边缘上支撑着晶片，使得晶片被悬置。形成于晶片下方的凹穴俘获破碎的晶片碎块并且防止沉积材料的绕回。另一方面，在图4A的实施方式中，晶片遍及其整个表面而被支撑。掩模组件被降低在位以用于溅射或其它形式的处理，并且被手动地或机械地升起以用于装载和卸载晶片。承载器上的一系列磁体帮助将内掩模固定在位且与晶片紧密接触。在反复使用之后，外掩模和内掩模可以被更换，而承载器组件的其余部分可以被重新使用。框架210，也被称作掩模组件边条，可以由低热膨胀材料制成，诸如氧化铝或钛。
根据以上的实施方式，内掩模建立起与基片的密切的无间隙接触。外掩模保护着内掩模、承载器和框架免于被沉积材料。在所示的实施方式中，外掩模和内掩模的开口呈伪方形(pseudo-square)的形状，适合于在边缘分流隔离工艺期间应用至单晶太阳能电池。在其它工艺期间内掩模具有某些孔口布置，而外掩模具有伪方形形状的孔口。伪方形形状是其拐角根据从中切下晶片的圆锭而被切掉的方形。当然，如果多晶的方形晶片被使用，那么外掩模和内掩模的开口也将是方形的。
图6示出了单一晶片承载器605的实施方式。晶片以其外周搁在凹部632上。以虚线示出的磁体634，在晶片周围被设置在承载器内部。对正销660被用来将外掩模对齐到承载器605。外掩模的实施方式被示于图7中，该图是从下侧观察的。外掩模745具有与承载器605的对正销660相对应的对正孔或凹部762。
图8示出了被用来保持外掩模和内掩模并将这些掩模固定至基座的顶部框架836的实施方式。顶部框架836可以通过例如由两根横向条864保持在一起的两根纵向条862而制成。外掩模被保持在凹穴866内部。对正孔868被设置以便将顶部框架对齐至基座。
图9示出了具有例如被设计用于在晶片上制作多个触点的孔图案的内掩模的实例。这种内掩模可以与示于图10中的基座一起被使用，在图10中各磁体1034被分布在晶片表面的下方遍及整个区域。这些磁体以交替的极性被定向。在本实施方式中，在基座中没有必要具有凸起式框架，但其反而可以被形成为平坦的平台，如在图10A的实例中所示。
图10A示出了呈静电卡盘(ESC)1080形式的基座1005的实施方式。在本实施方式中，ESC 1080的顶部为平坦的高台，并且没有凸起式框架且没有用于捕获破碎的基片碎块的凹穴。此外，在本实施方式中，弹簧加载的对正销1082被设置以便使得能够精确对正基片120。当掩模被放置在基片上时，其压缩对正销1082以便平放在基片上。这些对正销仅在两侧上被设置：在一侧上有一个销并且在以与第一侧成90度定向的另一侧上有两个销。于是基片可以被推动抵靠这些销以便对正基片。
如由上述的各实施方式可以被理解的，内磁性掩模应当是薄的，因而其是柔性的并且将顺应基片表面。基片保持器可以是框架、静电卡盘、平坦的板等等，只要其具有埋置在基片下方以保持内掩模与基片接触的磁体即可。这些磁体将沿着用于开放区域掩模(诸如仅掩蔽晶片的外边缘以用于边缘隔离的掩模)的掩模开口。对于具有遍及基片表面的孔的掩模，这些磁体将遍及该掩模的整个区域在该掩模下方成阵列。双掩模装置可被用于各种工艺，诸如，沉积，注入，RIE处理，等等。例如触摸屏可以通过覆盖沉积ITO继之以RIE处理以便穿过掩模形成ITO图案而被制成。
尽管本发明已在具体材料和具体步骤的示例性实施方式方面进行论述，但本领域的技术人员应理解的是，这些具体实例的变体可以被做出和/或被使用，并且这些结构和方法将根据由所描述和示出的实践给予的理解以及对操作的论述而得出，从而便于在不偏离由所附的权利要求限定的本发明的范围的情况下可以做出的修改。

Claims (28)

1.用于掩蔽半导体晶片的两部分式掩蔽系统，其包括：
内掩模，其由平坦的金属片构成，所述金属片具有依照将被赋予晶片的期望图案而在其中切出的至少一个孔口，使得当所述内掩模被置于晶片上时所述内掩模覆盖晶片的一些部分；和，
外掩模，其被构造用于放置在所述内掩模上面并掩蔽所述内掩模，所述外掩模具有尺寸被设计成覆盖所述内掩模外周边缘的敞开式切口，所述外掩模具有大于所述内掩模厚度的厚度。
2.如权利要求1所述的两部分式掩蔽系统，其中内掩模的所述孔口被设计成仅覆盖晶片的外周边缘。
3.如权利要求1所述的两部分式掩蔽系统，其中所述内掩模包括多个孔口，所述多个孔口被设计成在晶片的一个表面上产生重复图案。
4.如权利要求1所述的两部分式掩蔽系统，其中所述内掩模由磁性材料制成。
5.如权利要求1所述的两部分式掩蔽系统，其中内掩模具有0.001到0.003英寸的厚度。
6.如权利要求1所述的两部分式掩蔽系统，其中所述外掩模由磁性材料制成。
7.如权利要求1所述的两部分式掩蔽系统，其中所述外掩模由铝制成。
8.如权利要求1所述的两部分式掩蔽系统，其中所述内掩模由钢制成。
9.如权利要求1所述的两部分式掩蔽系统，还包括掩模框架，其被构造成支撑所述内掩模和外掩模，使得所述外掩模被夹在所述掩模框架和所述内掩模之间。
10.用于在处理期间支撑晶片的装置，其包括：
晶片承载器，其具有用于支撑晶片的平台；
内掩模，其被构造用于放置在晶片的顶部上，所述内掩模具有用于掩蔽晶片的一些部分并暴露晶片的剩余部分的开口图案；
外掩模，其被构造用于放置在所述承载器上面在所述内掩模的顶部上，所述外掩模具有被构造成部分地覆盖所述内掩模的开口。
11.如权利要求10所述的装置，其中所述内掩模由平坦的金属片构成，所述金属片具有尺寸略小于所述晶片的敞开式切口，使得当所述内掩模被置于所述晶片上时所述内掩模覆盖所述晶片的外周边缘。
12.如权利要求11所述的装置，其中所述内掩模由钢制成。
13.如权利要求11所述的装置，其中内掩模具有0.001到0.003英寸的厚度。
14.如权利要求10所述的装置，还包括多个磁体，其被埋置在所述承载器中并被构造成将所述内掩模牵引至与所述晶片接触。
15.如权利要求14所述的装置，其中所述外掩模由磁性材料制成以用于从所述磁体分流磁场并用于保持所述外掩模与所述内掩模接触。
16.如权利要求10所述的装置，其中所述外掩模由铝制成并且以物理接触地搁在所述内掩模的顶部上。
17.如权利要求10所述的装置，还包括承载器支座，其被构造用于同时支撑多个晶片承载器，每个晶片承载器均具有相应的内掩模和外掩模组件。
18.如权利要求17所述的装置，其中所述承载器支座包括保持所述多个晶片承载器的陶瓷条。
19.如权利要求17所述的装置，其中所述承载器支座还包括轨道，其被构造用于传输各晶片承载器通过处理系统。
20.如权利要求17所述的装置，其中所述承载器支座还包括掩模升降器，其被构造用于从所述晶片承载器升起所述外掩模和内掩模。
21.如权利要求17所述的装置，其中所述承载器支座还包括晶片举升销，其被构造用于从各晶片承载器升起晶片。
22.如权利要求10所述的装置，其中所述外掩模和内掩模被构造成仅通过磁性力而被保持至所述承载器，以便允许容易和快速地装载和卸载晶片。
23.如权利要求10所述的装置，其中所述承载器包括基座，所述基座具有带凹部的凸起式框架，所述框架限定出位于晶片下面的凹穴，使得晶片通过搁在所述凹部上的晶片外周而被悬置在所述凹穴上面。
24.如权利要求10所述的装置，其中所述承载器包括对正销并且所述外掩模具有相应的对正凹部。
25.如权利要求10所述的装置，其中所述外掩模包括折叠的铝片。
26.如权利要求14所述的装置，其中所述多个磁体由钐钴制成。
27.如权利要求10所述的装置，还包括掩模框架，其被构造成支撑所述内掩模和外掩模，使得所述内掩模被夹在所述掩模框架和所述外掩模之间。
28.如权利要求12所述的装置，其中所述磁体完全在所述框架周围以N-S-N-S-N的极性交替。
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JP2015520799A (ja) 2015-07-23
EP2839052A1 (en) 2015-02-25
WO2013159050A1 (en) 2013-10-24
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TWI518839B (zh) 2016-01-21
MY167662A (en) 2018-09-21

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