CN103344831A - Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof - Google Patents
Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof Download PDFInfo
- Publication number
- CN103344831A CN103344831A CN2013102442261A CN201310244226A CN103344831A CN 103344831 A CN103344831 A CN 103344831A CN 2013102442261 A CN2013102442261 A CN 2013102442261A CN 201310244226 A CN201310244226 A CN 201310244226A CN 103344831 A CN103344831 A CN 103344831A
- Authority
- CN
- China
- Prior art keywords
- mems
- symmetry
- direct
- waveguide transmission
- coplanar waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Micromachines (AREA)
Abstract
The invention discloses a phase detector based on micromechanical direct thermoelectric power sensors and a preparation method of the phase detector based on the micromechanical direct thermoelectric power sensors. The phase detector comprises a substrate, a ground wire arranged on the substrate, an MEMS power combiner, a coplanar waveguide transmission line, two sets of MEMS fixed beam structures, the MEMS direct thermoelectric microwave power sensors, an external voltage controlled oscillator and a frequency meter. The MEMS power combiner is used for conducting vector synthesis on input two paths of signals, then the MEMS direct thermoelectric microwave power sensors detect the power of the synthesized microwave signals, and direct current voltage is output at last. According to the phase detector based on the micromechanical direct thermoelectric power sensors, the structure is novel, composition modules of a common phase detector are simplified, and two modules of a phase discriminator and a low pass filter are directly simplified to a module composed of the MEMS power combiner and the MEMS direct thermoelectric microwave power sensors, so that the integration level of the phase detector is improved. Besides, the phase detector can be compatible with a GaAs monolithic microwave integrated circuit.
Description
Technical field
The present invention relates to a kind of phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics and preparation method thereof, belong to microelectron-mechanical (MEMS) technology.
Background technology
In research of microwave technology, be an important parameter of microwave signal as the microwave phase of one of three big parameters (amplitude, frequency and phase place) of characterization signal.Microwave signal phase detector has a wide range of applications in systems such as phased-array radar, antenna, phaselocked loop, phase measuring equipment.The principle of microwave signal phase detector is that phase differential is converted into voltage, electric current and the frequency signal of being convenient to measure, and reflects phase differential by them.Realize that at present the method that microwave phase detects mainly contains diode structure, multiplier architecture and vector calculus method, two kinds of methods of vector calculus method and front compare have low-power consumption, bandwidth, advantages of simple structure and simple.MEMS has that volume is little, low in energy consumption, low cost and other advantages, along with the development of MEMS technology and nowadays for the decline further investigation of wave power sensor of the direct thermoelectricity of MEMS, make and utilize the MEMS technology to realize becoming possibility based on the phase detectors of the direct thermoelectric (al) type power sensor of micromechanics.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics and preparation method thereof, directly with phase detector and two module reductions of low-pass filter be one and close device and the direct thermoelectricity of the MEMS module that the wave power sensor constitutes that declines by the MEMS merit, to improve the integrated level of phase detectors.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
Phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics, comprise substrate, be arranged on ground wire, MEMS merit on the substrate and close device, co-planar waveguide (CPW) transmission line, two groups of MEMS fixed beam structures and the direct thermoelectricity of MEMS decline wave power sensor and external voltage controlled oscillator and frequency meter, at axis of symmetry of substrate definition;
Described ground wire forms along axis of symmetry symmetrical structure, comprises that symmetry is positioned at axis of symmetry both sides and not contacted two sections side ground wires and the symmetrical one section common ground that is positioned on the axis of symmetry;
Described MEMS merit is closed device and is formed along axis of symmetry symmetrical structure, comprise that symmetry is positioned at two sections asymmetric coplanar striplines (ACPS) and the isolation resistance of axis of symmetry both sides, the input end of described two sections asymmetric coplanar striplines is connected by isolation resistance isolation, output terminal;
Described coplanar waveguide transmission line forms along axis of symmetry symmetrical structure, comprises the two sections input coplanar waveguide transmission lines and the symmetrical one section output coplanar waveguide transmission line that is positioned on the axis of symmetry that are positioned at axis of symmetry both sides and are not connected; Described two sections input coplanar waveguide transmission lines are connected with the input end of two sections asymmetric coplanar striplines respectively, respectively as first signal input port and secondary signal input port; After being connected, the output terminal of described two sections asymmetric coplanar striplines inserts the output coplanar waveguide transmission line, as signal output port;
Described two groups of MEMS fixed beam structures are separately positioned on both sides and the relative axis of symmetry symmetry of the axis of symmetry, described MEMS fixed beam structure comprises MEMS clamped beam and anchor district, and top, two ends that described MEMS clamped beam is connected across the input coplanar waveguide transmission line that is positioned at the same side are fixed on the side ground wire and common ground that is positioned at the same side by the anchor district respectively; Described MEMS clamped beam constitutes building-out capacitor with the input coplanar waveguide transmission line that is positioned at its below;
The direct thermoelectricity of the described MEMS wave power sensor that declines comprises two groups of tantalum nitride resistance, semiconductor thermocouple arm and direct current IOB, described signal output port is divided into two-way and is connected with two sections side ground wires with the semiconductor thermocouple arm by one group of tantalum nitride resistance respectively, wherein one section side ground wire inserts voltage controlled oscillator by a direct current IOB, and another section side ground wire is by another direct current IOB ground connection; Described two groups of tantalum nitride resistance and semiconductor thermocouple arm form cascaded structure;
The output signal of described voltage controlled oscillator inserts frequency meter.
Preferably, the part surface that is positioned at MEMS clamped beam below on the described input coplanar waveguide transmission line is coated with the silicon nitride medium layer.
Preferably, between the double layer of metal of the connecting line between one of them direct current IOB and the side ground wire silicon nitride medium layer is arranged.
Preferably, the direct thermoelectricity of the described MEMS power that the wave power sensor closes the synthetic microwave signal of device output based on the Seebeck principle to the MEMS merit that declines detects, and on the direct current IOB with the form output measurement result of DC voltage.
Described substrate is gallium arsenide substrate.
In the above-mentioned phase detectors, the CPW transmission line is used for realizing the transmission of microwave signal.The MEMS clamped beam constitutes building-out capacitor with the input coplanar waveguide transmission line that is positioned at its below, and the design of this building-out capacitor can be dwindled the size that the MEMS merit is closed device when realizing the circuit impedance coupling, make that the integrated level of whole phase detectors is higher.The MEMS merit close device be used for will input two paths of signals (first signal and secondary signal) to carry out vector synthetic, detect the power of the microwave signal after synthetic, last output dc voltage by the direct thermoelectricity of the MEMS wave power sensor that declines then; The DC voltage of output directly is linked into the input end of voltage controlled oscillator, produces output signal by voltage controlled oscillator; The output signal that voltage controlled oscillator produces inserts frequency meter, can extrapolate phase differential between first signal and the secondary signal by measured frequency then, thereby realizes the phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics.
A kind of preparation method of the phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics comprises the steps:
(1) prepares gallium arsenide substrate: select the semi-insulating GaAs substrate of extension for use, wherein extension N
+The doping content of gallium arsenide is 10
18Cm
-3, its square resistance is 100~130 Ω/;
(2) photoetching and isolate extension N
+Gallium arsenide, the figure of the semiconductor thermocouple arm of formation thermoelectric pile;
(3) anti-carve N
+Gallium arsenide, forming doping content is 10
17Cm
-3The semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: removal will keep the photoresist in tantalum nitride place;
(5) sputter tantalum nitride, thickness are 1 μ m;
(6) peel off;
(7) photoetching: removal will keep the photoresist in the place of ground floor gold;
(8) evaporation ground floor gold, thickness is 0.3 μ m;
(9) peel off, form coplanar waveguide transmission line and ground wire, the anchor district of MEMS clamped beam;
(10) anti-carve tantalum nitride, form tantalum nitride resistance and isolation resistance, its square resistance is 25 Ω/;
(11) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technology
Thick silicon nitride medium layer;
(12) photoetching and etch silicon nitride dielectric layer: be retained in the silicon nitride medium layer on the coplanar waveguide transmission line of MEMS clamped beam below, and the silicon nitride medium layer of isolating MEMS direct thermoelectric (al) type power sensor output terminal and ground wire junction;
(13) deposit and photoetching polyimide sacrificial layer: apply the thick polyimide sacrificial layer of 1.6 μ m in gallium arsenide substrate, require to fill up pit, by the thickness decision MEMS clamped beam of polyimide sacrificial layer and the distance between its below silicon nitride medium layer; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of MEMS clamped beam below;
(14) evaporation titanium/gold/titanium, thickness is
Evaporation is used for the down payment of plating;
(15) photoetching: removal will be electroplated local photoresist;
(16) electrogilding, thickness are 2 μ m;
(17) remove photoresist: removing does not need to electroplate local photoresist;
(18) anti-carve titanium/gold/titanium, the corrosion down payment forms coplanar waveguide transmission line, ground wire, MEMS clamped beam, direct current IOB;
(19) with this gallium arsenide substrate thinning back side to 100 μ m;
(20) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration is volatilized under the normal temperature, dries;
(21) external voltage controlled oscillator and frequency meter.
Beneficial effect: the phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics provided by the invention not only have novel structure, and simplified the composition module of general phase detectors, it directly with phase detector and two module reductions of low-pass filter is one and closes device and the direct thermoelectricity of the MEMS module that the wave power sensor constitutes that declines by the MEMS merit, improved the integrated level of phase detectors, and can with GaAs monolithic integrated microwave circuit compatibility.
Description of drawings
Fig. 1 is plan structure synoptic diagram of the present invention;
Fig. 2 is that the A-A' of Fig. 1 is to sectional view;
Fig. 3 is that the B-B' of Fig. 1 is to sectional view.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further explanation.
As Fig. 1, Fig. 2, Figure 3 shows that the phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics, comprise substrate 1, be arranged on ground wire 2, MEMS merit on the substrate 1 and close device, coplanar waveguide transmission line 3, two groups of MEMS fixed beam structures and the direct thermoelectricity of MEMS decline wave power sensor and external voltage controlled oscillator and frequency meter, at axis of symmetry of substrate 1 definition; Specified with regard to each ingredient below.
Described ground wire 2 forms along axis of symmetry symmetrical structure, comprises that symmetry is positioned at axis of symmetry both sides and not contacted two sections side ground wires and the symmetrical one section common ground that is positioned on the axis of symmetry.
Described MEMS merit close device be used for will input two paths of signals (reference signal and feedback signal) to carry out vector synthetic, it forms along axis of symmetry symmetrical structure, comprise that symmetry is positioned at two sections asymmetric coplanar striplines 4 and the isolation resistance 5 of axis of symmetry both sides, the input end of described two sections asymmetric coplanar striplines 4 by isolation resistance 5 isolate, output terminal is connected.
Described coplanar waveguide transmission line 3 is used for realizing the transmission of microwave signal, it forms along axis of symmetry symmetrical structure, comprises the two sections input coplanar waveguide transmission lines and the symmetrical one section output coplanar waveguide transmission line that is positioned on the axis of symmetry that are positioned at axis of symmetry both sides and are not connected; Described two sections input coplanar waveguide transmission lines are connected with the input end of two sections asymmetric coplanar striplines 4 respectively, respectively as first signal input port and secondary signal input port; After being connected, the output terminal of described two sections asymmetric coplanar striplines 4 inserts the output coplanar waveguide transmission line, as signal output port.
Described two groups of MEMS fixed beam structures are separately positioned on both sides and the relative axis of symmetry symmetry of the axis of symmetry, described MEMS fixed beam structure comprises MEMS clamped beam 10 and anchor district 11, and top, two ends that described MEMS clamped beam 10 is connected across the input coplanar waveguide transmission line that is positioned at the same side are fixed on the side ground wire and common ground that is positioned at the same side by anchor district 11 respectively; The part surface that is positioned at MEMS clamped beam 10 belows on the described input coplanar waveguide transmission line is coated with silicon nitride medium layer 9, described MEMS clamped beam 10 constitutes building-out capacitor with the input coplanar waveguide transmission line that is positioned at its below, the design of this building-out capacitor can be dwindled the MEMS power splitter when realizing the circuit impedance coupling size makes that the integrated level of whole phase detectors is higher.
The direct thermoelectricity of the described MEMS power that the wave power sensor is used for the MEMS merit is closed the microwave signal of device after synthetic that declines detects and output dc voltage, it comprises two groups of tantalum nitride resistance 7, semiconductor thermocouple arm 6 and direct current IOB 8, described signal output port is divided into two-way and is connected with two sections side ground wires with semiconductor thermocouple arm 6 by one group of tantalum nitride resistance 7 respectively, wherein one section side ground wire inserts voltage controlled oscillator by a direct current IOB 8, and another section side ground wire is by another direct current IOB 8 ground connection; Described two groups of tantalum nitride resistance 7 and semiconductor thermocouple arm 6 form cascaded structure; Between the double layer of metal of the connecting line between one of them direct current IOB 8 and the side ground wire silicon nitride medium layer 9 is arranged.The direct thermoelectricity of the described MEMS power that the wave power sensor closes the synthetic microwave signal of device output based on the Seebeck principle to the MEMS merit that declines detects, and on direct current IOB 8 with the form output measurement result of DC voltage.
The output signal of described voltage controlled oscillator inserts frequency meter, can extrapolate phase differential between first signal and the secondary signal by measured frequency then, thereby realizes the phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics.
A kind of preparation method of the phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics comprises the steps:
(1) prepares gallium arsenide substrate: select the semi-insulating GaAs substrate of extension for use, wherein extension N
+The doping content of gallium arsenide is 10
18Cm
-3, its square resistance is 100~130 Ω/;
(2) photoetching and isolate extension N
+Gallium arsenide, the figure of the semiconductor thermocouple arm of formation thermoelectric pile;
(3) anti-carve N
+Gallium arsenide, forming doping content is 10
17Cm
-3The semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: removal will keep the photoresist in tantalum nitride place;
(5) sputter tantalum nitride, thickness are 1 μ m;
(6) peel off;
(7) photoetching: removal will keep the photoresist in the place of ground floor gold;
(8) evaporation ground floor gold, thickness is 0.3 μ m;
(9) peel off, form coplanar waveguide transmission line and ground wire, the anchor district of MEMS clamped beam;
(10) anti-carve tantalum nitride, form tantalum nitride resistance and isolation resistance, its square resistance is 25 Ω/;
(11) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technology
Thick silicon nitride medium layer;
(12) photoetching and etch silicon nitride dielectric layer: be retained in the silicon nitride medium layer on the coplanar waveguide transmission line of MEMS clamped beam below, and the silicon nitride medium layer of isolating MEMS direct thermoelectric (al) type power sensor output terminal and ground wire junction;
(13) deposit and photoetching polyimide sacrificial layer: apply the thick polyimide sacrificial layer of 1.6 μ m in gallium arsenide substrate, require to fill up pit, by the thickness decision MEMS clamped beam of polyimide sacrificial layer and the distance between its below silicon nitride medium layer; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of MEMS clamped beam below;
(14) evaporation titanium/gold/titanium, thickness is
Evaporation is used for the down payment of plating;
(15) photoetching: removal will be electroplated local photoresist;
(16) electrogilding, thickness are 2 μ m;
(17) remove photoresist: removing does not need to electroplate local photoresist;
(18) anti-carve titanium/gold/titanium, the corrosion down payment forms coplanar waveguide transmission line, ground wire, MEMS clamped beam, direct current IOB;
(19) with this gallium arsenide substrate thinning back side to 100 μ m;
(20) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration is volatilized under the normal temperature, dries;
(21) external voltage controlled oscillator and frequency meter.
The above only is preferred implementation of the present invention; be noted that for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (5)
1. based on the phase detectors of the direct thermoelectric (al) type power sensor of micromechanics, it is characterized in that: comprise substrate (1), be arranged on ground wire (2), MEMS merit on the substrate (1) and close device, coplanar waveguide transmission line (3), two groups of MEMS fixed beam structures and the direct thermoelectricity of MEMS decline wave power sensor and external voltage controlled oscillator and frequency meter, at axis of symmetry of substrate (1) definition;
Described ground wire (2) forms along axis of symmetry symmetrical structure, comprises that symmetry is positioned at axis of symmetry both sides and not contacted two sections side ground wires and the symmetrical one section common ground that is positioned on the axis of symmetry;
Described MEMS merit is closed device and is formed along axis of symmetry symmetrical structure, comprise that symmetry is positioned at two sections asymmetric coplanar striplines (4) and the isolation resistance (5) of axis of symmetry both sides, the input end of described two sections asymmetric coplanar striplines (4) is connected by isolation resistance (5) isolation, output terminal;
Described coplanar waveguide transmission line (3) forms along axis of symmetry symmetrical structure, comprises the two sections input coplanar waveguide transmission lines and the symmetrical one section output coplanar waveguide transmission line that is positioned on the axis of symmetry that are positioned at axis of symmetry both sides and are not connected; Described two sections input coplanar waveguide transmission lines are connected with the input end of two sections asymmetric coplanar striplines (4) respectively, respectively as first signal input port and secondary signal input port; After being connected, the output terminal of described two sections asymmetric coplanar striplines (4) inserts the output coplanar waveguide transmission line, as signal output port;
Described two groups of MEMS fixed beam structures are separately positioned on both sides and the relative axis of symmetry symmetry of the axis of symmetry, described MEMS fixed beam structure comprises MEMS clamped beam (10) and anchor district (11), and top, two ends that described MEMS clamped beam (10) is connected across the input coplanar waveguide transmission line that is positioned at the same side are fixed on the side ground wire and common ground that is positioned at the same side by anchor district (11) respectively; Described MEMS clamped beam (10) and the input coplanar waveguide transmission line that is positioned at its below constitute building-out capacitor;
The direct thermoelectricity of the described MEMS wave power sensor that declines comprises two groups of tantalum nitride resistance (7), semiconductor thermocouple arm (6) and direct current IOB (8), described signal output port is divided into two-way and is connected with two sections side ground wires with semiconductor thermocouple arm (6) by one group of tantalum nitride resistance (7) respectively, wherein one section side ground wire inserts voltage controlled oscillator by a direct current IOB (8), and another section side ground wire is by another direct current IOB (8) ground connection; Described two groups of tantalum nitride resistance (7) and semiconductor thermocouple arm (6) form cascaded structure;
The output signal of described voltage controlled oscillator inserts frequency meter.
2. phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics according to claim 1 is characterized in that: the part surface that is positioned at MEMS clamped beam (10) below on the described input coplanar waveguide transmission line is coated with silicon nitride medium layer (9).
3. the phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics according to claim 1 is characterized in that: between the double layer of metal of the connecting line between one of them direct current IOB (8) and the side ground wire silicon nitride medium layer (9) is arranged.
4. phase detectors based on the direct thermoelectric (al) type power sensor of micromechanics according to claim 1, it is characterized in that: the direct thermoelectricity of the described MEMS power that the wave power sensor closes the synthetic microwave signal of device output based on the Seebeck principle to the MEMS merit that declines detects, and goes up form output measurement result with DC voltage in direct current IOB (8).
5. the preparation method based on the phase detectors of the direct thermoelectric (al) type power sensor of micromechanics is characterized in that: comprise the steps:
(1) prepares gallium arsenide substrate: select the semi-insulating GaAs substrate of extension for use, wherein extension N
+The doping content of gallium arsenide is 10
18Cm
-3, its square resistance is 100~130 Ω/;
(2) photoetching and isolate extension N
+Gallium arsenide, the figure of the semiconductor thermocouple arm of formation thermoelectric pile;
(3) anti-carve N
+Gallium arsenide, forming doping content is 10
17Cm
-3The semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: removal will keep the photoresist in tantalum nitride place;
(5) sputter tantalum nitride, thickness are 1 μ m;
(6) peel off;
(7) photoetching: removal will keep the photoresist in the place of ground floor gold;
(8) evaporation ground floor gold, thickness is 0.3 μ m;
(9) peel off, form coplanar waveguide transmission line and ground wire, the anchor district of MEMS clamped beam;
(10) anti-carve tantalum nitride, form tantalum nitride resistance and isolation resistance, its square resistance is 25 Ω/;
(11) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technology
Thick silicon nitride medium layer;
(12) photoetching and etch silicon nitride dielectric layer: be retained in the silicon nitride medium layer on the coplanar waveguide transmission line of MEMS clamped beam below, and the silicon nitride medium layer of isolating MEMS direct thermoelectric (al) type power sensor output terminal and ground wire junction;
(13) deposit and photoetching polyimide sacrificial layer: apply the thick polyimide sacrificial layer of 1.6 μ m in gallium arsenide substrate, require to fill up pit, by the thickness decision MEMS clamped beam of polyimide sacrificial layer and the distance between its below silicon nitride medium layer; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of MEMS clamped beam below;
(14) evaporation titanium/gold/titanium, thickness is
Evaporation is used for the down payment of plating;
(15) photoetching: removal will be electroplated local photoresist;
(16) electrogilding, thickness are 2 μ m;
(17) remove photoresist: removing does not need to electroplate local photoresist;
(18) anti-carve titanium/gold/titanium, the corrosion down payment forms coplanar waveguide transmission line, ground wire, MEMS clamped beam, direct current IOB;
(19) with this gallium arsenide substrate thinning back side to 100 μ m;
(20) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration is volatilized under the normal temperature, dries;
(21) external voltage controlled oscillator and frequency meter.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310244226.1A CN103344831B (en) | 2013-06-19 | 2013-06-19 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310244226.1A CN103344831B (en) | 2013-06-19 | 2013-06-19 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103344831A true CN103344831A (en) | 2013-10-09 |
CN103344831B CN103344831B (en) | 2015-04-29 |
Family
ID=49279644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310244226.1A Expired - Fee Related CN103344831B (en) | 2013-06-19 | 2013-06-19 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103344831B (en) |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103812468A (en) * | 2014-02-17 | 2014-05-21 | 东南大学 | Micro-mechanical clamped beam type pi type continuous reconfigurable microwave band-pass filter |
CN103812465A (en) * | 2014-02-17 | 2014-05-21 | 东南大学 | Micro-mechanical clamped beam type sixteen-state reconfigurable microwave band-pass filter |
CN106645923A (en) * | 2017-01-24 | 2017-05-10 | 东南大学 | Silicon based gap coupling type indirect type millimeter wave signal detection device |
CN106711164A (en) * | 2017-01-24 | 2017-05-24 | 东南大学 | Indirect heating type microwave signal detector for clamped beam |
CN106771602A (en) * | 2017-01-24 | 2017-05-31 | 东南大学 | Silicon substrate given frequency slot-coupled formula T junction direct-type millimeter wave phase detectors |
CN106771605A (en) * | 2017-01-24 | 2017-05-31 | 东南大学 | Silicon substrate unknown frequency slot-coupled formula T junction indirect type millimeter wave phase detectors |
CN106771581A (en) * | 2017-01-24 | 2017-05-31 | 东南大学 | The direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula |
CN106802369A (en) * | 2017-01-24 | 2017-06-06 | 东南大学 | Silicon substrate cantilever beam couples indirect heating type millimeter-wave signal detecting instrument |
CN106802370A (en) * | 2017-01-24 | 2017-06-06 | 东南大学 | Silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors |
CN106814260A (en) * | 2017-01-24 | 2017-06-09 | 东南大学 | The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula |
CN106814251A (en) * | 2017-01-24 | 2017-06-09 | 东南大学 | The coupling of silicon-base micro-mechanical cantilever beam directly heats online millimeter wave phase detectors |
CN106841787A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Clamped beam T junction directly heats online unknown frequency microwave phase detector device |
CN106841771A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Clamped beam T junction direct-heating type microwave signal detector |
CN106841799A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | The direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction |
CN106841800A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors |
CN106841772A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | The indirect type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction |
CN106841785A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Clamped beam directly heats online given frequency microwave phase detector device |
CN106841793A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | The online given frequency microwave phase detector device of clamped beam indirectly heat |
CN106841781A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Online millimeter wave phase detectors are directly heated based on silicon substrate cantilever beam T junction |
CN106841775A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction |
CN106841789A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Clamped beam directly heats online unknown frequency microwave phase detector device |
CN106841782A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Silicon substrate cantilever beam couples direct-heating type unknown frequency millimeter wave phase detectors |
CN106872796A (en) * | 2017-01-24 | 2017-06-20 | 东南大学 | The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula |
CN107064617A (en) * | 2017-01-24 | 2017-08-18 | 东南大学 | Silicon substrate cantilever beam couples indirect heating type unknown frequency millimeter wave phase detectors |
CN117253889A (en) * | 2023-11-20 | 2023-12-19 | 成都科华新创科技有限公司 | Static protection circuit of clamped beam structure of radio frequency integrated circuit and preparation method thereof |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106872797B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | Clamped beam T junction indirect heating type microwave signal detector device |
CN106771606A (en) * | 2017-01-24 | 2017-05-31 | 东南大学 | The online microwave phase detector device of T-shaped knot slot-coupled |
CN106814259B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | Clamped beam direct-heating type microwave signal detector |
CN106872780B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | The online unknown frequency microwave phase detector device of clamped beam T junction indirect heating |
CN106841796B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | The online unknown frequency microwave phase detector device of clamped beam indirect heating |
CN106841788B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | The online given frequency microwave phase detector device of clamped beam T junction indirect heating |
CN106841794B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Clamped beam T junction directly heats online given frequency microwave phase detector device |
CN106841795A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Cantilever beam couples online microwave phase detector device |
CN106814252A (en) * | 2017-01-24 | 2017-06-09 | 东南大学 | Online microwave phase detector device based on clamped beam |
CN106814253A (en) * | 2017-01-24 | 2017-06-09 | 东南大学 | The online microwave phase detector device of gap T-shaped knot |
CN106872767B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Clamped beam indirect heating type microwave signal detector device |
CN106771558B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Clamped beam direct-heating type microwave signal detector device |
CN106841790B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Clamped beam T junction direct-heating type microwave signal detector device |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU1395033A1 (en) * | 1986-03-25 | 1996-02-27 | Ереванский политехнический институт им.К.Маркса | Photoelectronic light detector |
WO2002091464A1 (en) * | 2001-03-01 | 2002-11-14 | Onix Micro Systems | Optical cross-connect system |
CN101431172A (en) * | 2008-07-29 | 2009-05-13 | 华东师范大学 | Reconfigurable microwave low-pass filter containing MEMS switch and its manufacturing method |
CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
CN101915870A (en) * | 2010-07-12 | 2010-12-15 | 东南大学 | MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof |
CN201788226U (en) * | 2010-09-26 | 2011-04-06 | 中国地质大学(武汉) | Radio frequency power phase detection device |
CN103048536A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on clamped beam and direct-type power sensor |
CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
CN103116070A (en) * | 2013-01-18 | 2013-05-22 | 东南大学 | Microwave detection system and detection method thereof based on clamped beams and direct-type power sensors |
CN103116073A (en) * | 2013-01-18 | 2013-05-22 | 东南大学 | Cantilever beam and direct-type power sensor based microwave detecting system and detecting method thereof |
CN203310915U (en) * | 2013-06-19 | 2013-11-27 | 东南大学 | Phase detector based on micro mechanical direct thermoelectric power sensor |
-
2013
- 2013-06-19 CN CN201310244226.1A patent/CN103344831B/en not_active Expired - Fee Related
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU1395033A1 (en) * | 1986-03-25 | 1996-02-27 | Ереванский политехнический институт им.К.Маркса | Photoelectronic light detector |
WO2002091464A1 (en) * | 2001-03-01 | 2002-11-14 | Onix Micro Systems | Optical cross-connect system |
CN101431172A (en) * | 2008-07-29 | 2009-05-13 | 华东师范大学 | Reconfigurable microwave low-pass filter containing MEMS switch and its manufacturing method |
CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
CN101915870A (en) * | 2010-07-12 | 2010-12-15 | 东南大学 | MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof |
CN201788226U (en) * | 2010-09-26 | 2011-04-06 | 中国地质大学(武汉) | Radio frequency power phase detection device |
CN103048536A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on clamped beam and direct-type power sensor |
CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
CN103116070A (en) * | 2013-01-18 | 2013-05-22 | 东南大学 | Microwave detection system and detection method thereof based on clamped beams and direct-type power sensors |
CN103116073A (en) * | 2013-01-18 | 2013-05-22 | 东南大学 | Cantilever beam and direct-type power sensor based microwave detecting system and detecting method thereof |
CN203310915U (en) * | 2013-06-19 | 2013-11-27 | 东南大学 | Phase detector based on micro mechanical direct thermoelectric power sensor |
Non-Patent Citations (1)
Title |
---|
焦永昌 等: "基于MEMS技术的差分式微波信号相位检测器", 《东南大学学报》 * |
Cited By (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103812468A (en) * | 2014-02-17 | 2014-05-21 | 东南大学 | Micro-mechanical clamped beam type pi type continuous reconfigurable microwave band-pass filter |
CN103812465A (en) * | 2014-02-17 | 2014-05-21 | 东南大学 | Micro-mechanical clamped beam type sixteen-state reconfigurable microwave band-pass filter |
CN103812465B (en) * | 2014-02-17 | 2016-05-04 | 东南大学 | The clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics |
CN103812468B (en) * | 2014-02-17 | 2016-08-17 | 东南大学 | Micromechanics clamped beam type π type continuous reconfigurable microwave band filter |
CN106645923A (en) * | 2017-01-24 | 2017-05-10 | 东南大学 | Silicon based gap coupling type indirect type millimeter wave signal detection device |
CN106711164A (en) * | 2017-01-24 | 2017-05-24 | 东南大学 | Indirect heating type microwave signal detector for clamped beam |
CN106771602A (en) * | 2017-01-24 | 2017-05-31 | 东南大学 | Silicon substrate given frequency slot-coupled formula T junction direct-type millimeter wave phase detectors |
CN106771605A (en) * | 2017-01-24 | 2017-05-31 | 东南大学 | Silicon substrate unknown frequency slot-coupled formula T junction indirect type millimeter wave phase detectors |
CN106771581A (en) * | 2017-01-24 | 2017-05-31 | 东南大学 | The direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula |
CN106802369A (en) * | 2017-01-24 | 2017-06-06 | 东南大学 | Silicon substrate cantilever beam couples indirect heating type millimeter-wave signal detecting instrument |
CN106802370A (en) * | 2017-01-24 | 2017-06-06 | 东南大学 | Silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors |
CN106814260A (en) * | 2017-01-24 | 2017-06-09 | 东南大学 | The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula |
CN106814251A (en) * | 2017-01-24 | 2017-06-09 | 东南大学 | The coupling of silicon-base micro-mechanical cantilever beam directly heats online millimeter wave phase detectors |
CN106841787A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Clamped beam T junction directly heats online unknown frequency microwave phase detector device |
CN106841771A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Clamped beam T junction direct-heating type microwave signal detector |
CN106841799A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | The direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction |
CN106841800A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors |
CN106841772A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | The indirect type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction |
CN106841785A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Clamped beam directly heats online given frequency microwave phase detector device |
CN106841793A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | The online given frequency microwave phase detector device of clamped beam indirectly heat |
CN106841781A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Online millimeter wave phase detectors are directly heated based on silicon substrate cantilever beam T junction |
CN106841775A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction |
CN106841789A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Clamped beam directly heats online unknown frequency microwave phase detector device |
CN106841782A (en) * | 2017-01-24 | 2017-06-13 | 东南大学 | Silicon substrate cantilever beam couples direct-heating type unknown frequency millimeter wave phase detectors |
CN106872796A (en) * | 2017-01-24 | 2017-06-20 | 东南大学 | The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula |
CN107064617A (en) * | 2017-01-24 | 2017-08-18 | 东南大学 | Silicon substrate cantilever beam couples indirect heating type unknown frequency millimeter wave phase detectors |
CN106841775B (en) * | 2017-01-24 | 2019-01-25 | 东南大学 | The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction |
CN106645923B (en) * | 2017-01-24 | 2019-01-25 | 东南大学 | The indirect type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula |
CN106841772B (en) * | 2017-01-24 | 2019-01-25 | 东南大学 | The indirect type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction |
CN106872796B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula |
CN106802370B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | Silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors |
CN106771602B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | Silicon substrate given frequency slot-coupled formula T junction direct-type millimeter wave phase detectors |
CN106771581B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | The direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula |
CN106841782B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | Silicon substrate cantilever beam couples direct-heating type unknown frequency millimeter wave phase detectors |
CN106814260B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula |
CN106841799B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | The direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction |
CN107064617B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | Silicon substrate cantilever beam couples indirect heating type unknown frequency millimeter wave phase detectors |
CN106802369B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | Silicon substrate cantilever beam couples indirect heating type millimeter-wave signal detecting instrument |
CN106841800B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | Silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors |
CN106841771B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Clamped beam T junction direct-heating type microwave signal detector |
CN106841781B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Online millimeter wave phase detectors are directly heated based on silicon substrate cantilever beam T junction |
CN106841793B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | The online given frequency microwave phase detector device of clamped beam indirect heating |
CN106841787B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Clamped beam T junction directly heats online unknown frequency microwave phase detector device |
CN106841785B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Clamped beam directly heats online given frequency microwave phase detector device |
CN106771605B (en) * | 2017-01-24 | 2019-04-09 | 东南大学 | Silicon substrate unknown frequency slot-coupled formula T junction indirect type millimeter wave phase detectors |
CN106841789B (en) * | 2017-01-24 | 2019-04-26 | 东南大学 | Clamped beam directly heats online unknown frequency microwave phase detector device |
CN106814251B (en) * | 2017-01-24 | 2019-04-30 | 东南大学 | The coupling of silicon-base micro-mechanical cantilever beam directly heats online millimeter wave phase detectors |
CN106711164B (en) * | 2017-01-24 | 2019-05-17 | 东南大学 | Clamped beam indirect heating type microwave signal detector |
CN117253889A (en) * | 2023-11-20 | 2023-12-19 | 成都科华新创科技有限公司 | Static protection circuit of clamped beam structure of radio frequency integrated circuit and preparation method thereof |
CN117253889B (en) * | 2023-11-20 | 2024-01-26 | 成都科华新创科技有限公司 | Static protection circuit of clamped beam structure of radio frequency integrated circuit and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN103344831B (en) | 2015-04-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103344831A (en) | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof | |
CN203310915U (en) | Phase detector based on micro mechanical direct thermoelectric power sensor | |
CN103048540B (en) | Based on online microwave frequency detector and the detection method thereof of semi-girder and direct-type power sensor | |
CN103116073B (en) | Cantilever beam and direct-type power sensor based microwave detecting system and detecting method thereof | |
CN103105531B (en) | The online microwave frequency detector of microelectron-mechanical and detection method thereof | |
CN103048536B (en) | Online microwave frequency detector and detecting method thereof based on clamped beam and direct-type power sensor | |
CN103281074B (en) | A kind of phase-locked loop based on micromachine indirect thermoelectric type power sensor and method for making | |
CN103116067B (en) | On-line microwave frequency detector and detection method thereof based on clamped beams and indirect-type power sensors | |
CN103364636B (en) | Micro-machinery cantilever capacitance type power sensor-based phase detector and manufacturing method of phase detector | |
CN103116071B (en) | Micro-electromechanical microwave frequency and power detecting system and detecting method thereof | |
CN103281078A (en) | Frequency divider and preparation method based on micromechanics clamped beam capacitive power sensor | |
CN103116070B (en) | Microwave detection system and detection method thereof based on clamped beams and direct-type power sensors | |
CN203313122U (en) | Frequency multiplier based on micro mechanical direct thermoelectric power sensor | |
CN103346785B (en) | Based on the phase-locked loop and preparation method thereof of micro-mechanical direct thermoelectric type power sensor | |
CN103336175B (en) | Phase detector based on micro-machinery clamped beam capacitance type power sensor and manufacture method thereof | |
CN103344833B (en) | Phase detector based on micromachine indirect thermoelectric type power sensor and manufacturing method | |
CN203310918U (en) | Phase detector based on micromechanical indirect thermoelectric power sensor | |
CN203313159U (en) | Frequency divider based on micro mechanical direct thermoelectric power sensor | |
CN103116072B (en) | Microwave detecting system based on clamped beams and indirect power sensors and detecting method of microwave detecting system | |
CN203313157U (en) | Phase locked loop based on micro mechanical direct thermoelectric power sensor | |
CN203313160U (en) | Frequency divider based on micromechanical indirect thermoelectric power sensor | |
CN203313123U (en) | Frequency multiplier based on micro mechanical indirect thermoelectric power sensor | |
CN103346788B (en) | Based on the frequency divider and preparation method thereof of micro-mechanical direct thermoelectric type power sensor | |
CN203313158U (en) | Phase locked loop based on micro mechanical indirect thermoelectric power sensor | |
CN103346737B (en) | Based on the frequency multiplier and preparation method thereof of micro-mechanical direct thermoelectric type power sensor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP02 | Change in the address of a patent holder |
Address after: 210093 Nanjing University Science Park, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province Patentee after: Southeast University Address before: 210033 Xigang office, Qixia District, Nanjing, Jiangsu, No. 8, Qi Min Dong Road, Xingshan City, Patentee before: Southeast University |
|
CP02 | Change in the address of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150429 Termination date: 20190619 |
|
CF01 | Termination of patent right due to non-payment of annual fee |