CN106771606A - The online microwave phase detector device of T-shaped knot slot-coupled - Google Patents
The online microwave phase detector device of T-shaped knot slot-coupled Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 238000001514 detection method Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 6
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 239000003990 capacitor Substances 0.000 claims description 9
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- 238000002955 isolation Methods 0.000 claims description 6
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- 238000003491 array Methods 0.000 claims description 3
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- 238000010168 coupling process Methods 0.000 abstract description 5
- 238000005859 coupling reaction Methods 0.000 abstract description 5
- 238000001308 synthesis method Methods 0.000 abstract description 4
- 230000008054 signal transmission Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 239000010931 gold Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
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- 239000004642 Polyimide Substances 0.000 description 4
- 230000005678 Seebeck effect Effects 0.000 description 4
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- 238000000708 deep reactive-ion etching Methods 0.000 description 4
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- 229920001721 polyimide Polymers 0.000 description 4
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- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
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- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
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Abstract
本发明的T形结缝隙耦合在线式微波相位检测器，检测器制备在高阻硅衬底上，由共面波导传输线、两个缝隙结构、T形结以及两个直接加热式微波功率传感器所构成。在微波信号传输的共面波导传输线的信号线两侧对称设置有两个缝隙结构，上侧的缝隙结构连接着直接加热式微波功率传感器，主要用于检测耦合出的信号的功率大小。由于上下耦合结构对称，所以耦合出的信号功率大小、相位等完全相等。下侧的缝隙结构连接着T形结以及直接加热式微波功率传感器，通过矢量合成法实现微波相位的在线式检测。本发明的创新之处在于利用缝隙结构实现了微波信号相位的在线式检测，并且由于耦合出的信号相比于待测信号而言小得多，因此对该微波信号影响不大。
The T-junction slot-coupled on-line microwave phase detector of the present invention is prepared on a high-resistance silicon substrate, and is composed of a coplanar waveguide transmission line, two slot structures, a T-junction and two direct heating microwave power sensors. constitute. Two slot structures are symmetrically arranged on both sides of the signal line of the coplanar waveguide transmission line for microwave signal transmission, and the upper slot structure is connected to a direct heating microwave power sensor, which is mainly used to detect the power of the coupled signal. Since the upper and lower coupling structures are symmetrical, the power and phase of the coupled signals are completely equal. The slot structure on the lower side is connected to the T-junction and the direct heating microwave power sensor, and the online detection of the microwave phase is realized through the vector synthesis method. The innovation of the present invention lies in that the on-line detection of the phase of the microwave signal is realized by using the slit structure, and since the coupled signal is much smaller than the signal to be tested, it has little influence on the microwave signal.
Description
技术领域technical field
本发明提出了T形结缝隙耦合在线式微波相位检测器，属于微电子机械系统(MEMS)的技术领域。The invention provides a T-junction gap coupled on-line microwave phase detector, which belongs to the technical field of micro-electro-mechanical systems (MEMS).
背景技术Background technique
在微波领域中，微波信号相位测量占有十分重要的地位。微波相位检测器广泛应用于个人通信、军事国防和科学研究等方面。随着频率的增加，信号的波长与电路中各种元器件尺寸逐步接近，电路中电压、电流都以波的形式存在，信号的相位延迟使得电路中不仅不同位置处的电压、电流在同一时刻振幅各不相同，而且同一位置处的电压、电流在不同时刻也各不相同。因此在微波频段掌握并控制信号的相位是很有必要的，微波信号的相位也就成了一个重要的测量参数。本发明即是基于Si工艺设计一种T形结缝隙耦合在线式微波相位检测器。In the field of microwave, the phase measurement of microwave signal occupies a very important position. Microwave phase detectors are widely used in personal communications, military defense, and scientific research. As the frequency increases, the wavelength of the signal is gradually approaching the size of various components in the circuit. The voltage and current in the circuit exist in the form of waves. The phase delay of the signal makes the voltage and current at different positions in the circuit not only at the same time The amplitudes are different, and the voltage and current at the same location are also different at different times. Therefore, it is necessary to grasp and control the phase of the signal in the microwave frequency band, and the phase of the microwave signal has become an important measurement parameter. The present invention designs a T-junction gap-coupled on-line microwave phase detector based on the Si process.
发明内容Contents of the invention
技术问题：本发明的目的是提出一种T形结缝隙耦合在线式微波相位检测器，本发明采用了缝隙结构耦合微波信号，在功率合成方面采用T形结，在微波信号的功率检测方面采用直接加热式微波功率传感器，在微波相位检测方面采用矢量合成法，从而实现了在线式微波相位检测。Technical problem: the purpose of the present invention is to propose a T-junction gap coupled on-line microwave phase detector. The present invention uses a slot structure to couple microwave signals, adopts T-junction in terms of power synthesis, and adopts T-junction in power detection of microwave signals. The direct heating microwave power sensor adopts the vector synthesis method in the aspect of microwave phase detection, thus realizing the on-line microwave phase detection.
技术方案：本发明的T形结缝隙耦合在线式微波相位检测器，微波相位检测器由共面波导传输线、两个关于共面波导传输线的信号线对称的缝隙结构、T形结以及两个直接加热式微波功率传感器所构成，如附图1所示。微波的相位检测采用的是矢量合成法，将参考信号和待测信号通过T形结合成后由余弦函数式计算出微波信号的相位。Technical solution: T-junction slot coupling online microwave phase detector of the present invention, the microwave phase detector consists of a coplanar waveguide transmission line, two slot structures symmetrical to the signal lines of the coplanar waveguide transmission line, a T-junction and two direct The heating type microwave power sensor constitutes, as shown in accompanying drawing 1. The microwave phase detection adopts the vector synthesis method, and the phase of the microwave signal is calculated by the cosine function formula after combining the reference signal and the signal to be measured through T-shape.
共面波导传输线由共面波导传输线的信号线和地线构成，共面波导传输线的信号线上侧的缝隙结构通过直接加热式微波功率传感器的共面波导传输线的信号线连接直接加热式微波功率传感器1，下侧的缝隙结构通过T形结的第一共面波导传输线的信号线连接T形结的一个输入端，另一个输入端通过T形结的第二共面波导传输线的信号线连接参考信号输入端口，T形结的输出端口通过T形结的第三共面波导传输线的信号线连接直接加热式微波功率传感器2。The coplanar waveguide transmission line is composed of the signal line and the ground line of the coplanar waveguide transmission line. The gap structure on the upper side of the signal line of the coplanar waveguide transmission line is connected to the direct heating microwave power sensor through the signal line of the coplanar waveguide transmission line of the direct heating microwave power sensor. Sensor 1, the slot structure on the lower side is connected to one input end of the T-junction through the signal line of the first coplanar waveguide transmission line of the T-junction, and the other input end is connected to the signal line of the second coplanar waveguide transmission line of the T-junction Referring to the signal input port, the output port of the T-junction is connected to the direct heating microwave power sensor 2 through the signal line of the third coplanar waveguide transmission line of the T-junction.
T形结包括第一空气桥、第二空气桥、第三空气桥、第一共面波导传输线的信号线、第二共面波导传输线的信号线、第三共面波导传输线的信号线，为三端口器件，可用于功率合成，无需隔离电阻，其中第一空气桥、第二空气桥、第三空气桥用于共面波导传输线的地线之间的互连，同时为了方便这三个空气桥的释放，在其上制作了一组小孔阵列。The T-junction includes a first air bridge, a second air bridge, a third air bridge, a signal line of the first coplanar waveguide transmission line, a signal line of the second coplanar waveguide transmission line, and a signal line of the third coplanar waveguide transmission line, which is A three-port device can be used for power combining without isolation resistors, where the first air bridge, the second air bridge, and the third air bridge are used for the interconnection between the ground wires of the coplanar waveguide transmission line, and for the convenience of the three air bridges The bridge is released, and a set of small hole arrays are made on it.
直接加热式微波功率传感器包括半导体热偶臂、终端电阻、直流输出块、隔绝直流电容、共面波导传输线的信号线，其作用主要是基于塞贝克效应来检测待测微波信息的功率大小。The direct heating microwave power sensor includes a semiconductor thermocouple arm, a terminal resistor, a DC output block, a DC isolation capacitor, and a signal line of a coplanar waveguide transmission line. Its function is mainly based on the Seebeck effect to detect the power of the microwave information to be measured.
有益效果：本发明是T形结缝隙耦合在线式微波相位检测器，微波相位检测器采用了缝隙结构，这种结构能将小部分的微波信号耦合出来，并利用这部分耦合信号来实现微波相位的在线式检测，而大部分的信号能够继续在共面波导上传播并进行后续信号处理。Beneficial effects: the present invention is a T-junction slot-coupled on-line microwave phase detector. The microwave phase detector adopts a slot structure, which can couple a small part of the microwave signal, and use this part of the coupling signal to realize the microwave phase On-line detection, and most of the signals can continue to propagate on the coplanar waveguide for subsequent signal processing.
附图说明Description of drawings
图1为本发明的T形结缝隙耦合在线式微波相位检测器俯视图；Fig. 1 is the top view of the T-junction slot coupling online microwave phase detector of the present invention;
图2为图1 T形结缝隙耦合在线式微波相位检测器的A-A’剖面图；Fig. 2 is the A-A' sectional view of Fig. 1 T-shaped junction gap-coupled on-line microwave phase detector;
图3为图1 T形结缝隙耦合在线式微波相位检测器的B-B’剖面图；Fig. 3 is the B-B ' sectional view of Fig. 1 T-shaped junction gap-coupled on-line microwave phase detector;
图中包括：高阻硅衬底1，共面波导传输线的信号线2、地线3，缝隙结构4，缝隙结构5，直接加热式微波功率传感器1的半导体热偶臂6、终端电阻7、直流输出块8、隔绝直流电容9、共面波导传输线的信号线10，T形结的第一空气桥11、第二空气桥12、第三空气桥13、第一共面波导传输线的信号线14、第二共面波导传输线的信号线15、第三共面波导传输线的信号线16，直接加热式微波功率传感器2的半导体热偶臂17终端电阻18、直流输出块19、隔绝直流电容20，SiO2层21。在高阻硅衬底1上制备一层SiO2层21，在SiO2层21上设有共面波导传输线、缝隙结构4和缝隙结构5、间接热电式微波功率传感器1和间接热电式微波功率传感器2。The figure includes: a high-resistance silicon substrate 1, a signal line 2 of a coplanar waveguide transmission line, a ground line 3, a slot structure 4, a slot structure 5, a semiconductor thermocouple arm 6 of a direct heating microwave power sensor 1, a terminal resistor 7, DC output block 8, isolated DC capacitor 9, signal line 10 of coplanar waveguide transmission line, first air bridge 11, second air bridge 12, third air bridge 13 of T-junction, signal line of first coplanar waveguide transmission line 14. The signal line 15 of the second coplanar waveguide transmission line, the signal line 16 of the third coplanar waveguide transmission line, the semiconductor thermocouple arm 17 of the direct heating microwave power sensor 2, the terminal resistor 18, the DC output block 19, and the isolated DC capacitor 20 , SiO 2 layer 21. One layer of SiO2 layer 21 is prepared on the high-resistance silicon substrate 1, and coplanar waveguide transmission line, slot structure 4 and slot structure 5, indirect thermoelectric microwave power sensor 1 and indirect thermoelectric microwave power sensor 1 are arranged on SiO2 layer 21. sensor 2.
具体实施方式detailed description
本发明的T形结缝隙耦合在线式微波相位检测器是由共面波导传输线、两个关于共面波导传输线的信号线2对称的缝隙结构4和缝隙结构5、T形结以及两个直接加热式微波功率传感器所构成的，如附图1所示。采用直接加热式微波功率传感器检测微波信号的功率，采用矢量合成法进行微波信号的相位检测，将参考信号和待测信号采用T形结合成后由余弦函数式计算出待测微波信号的相位。The T-junction slot coupled on-line microwave phase detector of the present invention is composed of a coplanar waveguide transmission line, two symmetrical slot structures 4 and 5, a T-shaped junction and two direct heating Type microwave power sensor constituted, as shown in Figure 1. The direct heating microwave power sensor is used to detect the power of the microwave signal, and the vector synthesis method is used to detect the phase of the microwave signal. The reference signal and the signal to be measured are combined in a T shape, and the phase of the microwave signal to be measured is calculated by the cosine function formula.
共面波导传输线由共面波导传输线的信号线2和地线3构成，在共面波导传输线的信号线2两侧对称分别设有一个缝隙结构4和缝隙结构5，上侧的缝隙结构4通过直接加热式微波功率传感器1的共面波导传输线的信号线10连接直接加热式微波功率传感器。下侧的缝隙结构5通过T形结的第一共面波导传输线的信号线14连接T形结的一个输入端，另一个输入端通过T形结的第二共面波导传输线的信号线15连接参考信号输入端口，T形结的输出端通过T形结的共面波导传输线的信号线16连接直接加热式微波功率传感器2。The coplanar waveguide transmission line is composed of the signal line 2 and the ground line 3 of the coplanar waveguide transmission line, and a slot structure 4 and a slot structure 5 are arranged symmetrically on both sides of the signal line 2 of the coplanar waveguide transmission line, and the slot structure 4 on the upper side passes through The signal line 10 of the coplanar waveguide transmission line of the direct heating microwave power sensor 1 is connected to the direct heating microwave power sensor. The slot structure 5 on the lower side is connected to one input end of the T-junction through the signal line 14 of the first coplanar waveguide transmission line of the T-junction, and the other input end is connected through the signal line 15 of the second coplanar waveguide transmission line of the T-junction Referring to the signal input port, the output end of the T-junction is connected to the direct heating microwave power sensor 2 through the signal line 16 of the coplanar waveguide transmission line of the T-junction.
T形结包括第一空气桥11、第二空气桥12、第三空气桥13、第一共面波导传输线的信号线14、第二共面波导传输线的信号线15、第三共面波导传输线的信号线16，为三端口器件，可用于功率合成，无需隔离电阻，其中第一空气桥11、第二空气桥12、第三空气桥13用于共面波导传输线的地线3之间的互连，同时为了方便这三个空气桥的释放，在其上制作了一组小孔阵列。The T-junction includes a first air bridge 11, a second air bridge 12, a third air bridge 13, a signal line 14 of the first coplanar waveguide transmission line, a signal line 15 of the second coplanar waveguide transmission line, and a third coplanar waveguide transmission line The signal line 16 is a three-port device, which can be used for power combining without isolation resistors, wherein the first air bridge 11, the second air bridge 12, and the third air bridge 13 are used for the connection between the ground wires 3 of the coplanar waveguide transmission line Interconnection, and in order to facilitate the release of these three air bridges, a set of small hole arrays are made on it.
直接加热式微波功率传感器1包括半导体热偶臂6、终端电阻7、直流输出块8、隔绝直流电容9、共面波导传输线的信号线10；直接加热式微波功率传感器2包括半导体热偶臂17终端电阻18、直流输出块19、隔绝直流电容20。Direct heating microwave power sensor 1 includes semiconductor thermocouple arm 6, terminal resistor 7, DC output block 8, isolated DC capacitor 9, signal line 10 of coplanar waveguide transmission line; direct heating microwave power sensor 2 includes semiconductor thermocouple arm 17 Terminal resistor 18, DC output block 19, and DC isolation capacitor 20.
直接加热式微波功率传感器的基本工作原理是基于塞贝克效应，所谓塞贝克效应就是由A、B两种不同的导体一端紧密地连在一起，当两接点温度不等(T>T0，T和T0分别为热端和冷端的温度)时，在另一端两点处就会产生电势，从而形成电流，这一现象又称为热电效应，该电动势称为热电势。The basic working principle of the direct heating microwave power sensor is based on the Seebeck effect. The so-called Seebeck effect is that two different conductors A and B are closely connected at one end. When the temperature of the two junctions is not equal (T>T 0 , T and T 0 are the temperatures of the hot end and the cold end respectively), an electric potential will be generated at two points at the other end, thereby forming a current. This phenomenon is also called the thermoelectric effect, and the electromotive force is called the thermoelectric potential.
本发明提出了一种T形结缝隙耦合在线式微波相位检测器，当待测微波信号在共面波导传输线上传输时，共面波导传输线的信号线2两侧对称的缝隙结构4和缝隙结构5能够耦合出小部分信号，这部分被耦合出的小信号拥有与待测信号相同的相位。上侧缝隙结构4将耦合出的信号由直接加热式微波功率传感器1的共面波导传输线的信号线10传输向直接加热式微波功率传感器1，基于塞贝克效应以直流输出电压V1的形式输出检测结果，可推算出该耦合信号的功率P1。由对称性可知，下侧的缝隙结构5耦合出的信号功率也是P1。由T形结将功率为P2、对应直流输入电压为V2的参考信号和功率为P1、对应直流输出电压为V1的下侧缝隙结构5耦合出的信号进行功率矢量合成，合成后的信号利用直接加热式微波功率传感器检测得到直流输出电压V3，可推算出该合成功率为P3。它们之间满足关于的余弦函数式：The present invention proposes a T-junction gap coupled online microwave phase detector. When the microwave signal to be measured is transmitted on the coplanar waveguide transmission line, the symmetrical slot structure 4 and the slot structure on both sides of the signal line 2 of the coplanar waveguide transmission line 5 can couple a small part of the signal, and this part of the coupled small signal has the same phase as the signal to be tested. The upper side slot structure 4 transmits the coupled signal from the signal line 10 of the coplanar waveguide transmission line of the direct heating microwave power sensor 1 to the direct heating microwave power sensor 1 , and outputs it in the form of a DC output voltage V1 based on the Seebeck effect From the detection result, the power P 1 of the coupling signal can be calculated. It can be seen from the symmetry that the signal power coupled out from the lower slot structure 5 is also P 1 . The reference signal with power P 2 corresponding to DC input voltage V 2 and the signal coupled from the lower slot structure 5 with power P 1 and corresponding DC output voltage V 1 are combined by power vector through the T-junction, and after synthesis The signal of the direct heating microwave power sensor is used to detect the DC output voltage V 3 , and the combined power can be calculated as P 3 . between them satisfies the The cosine function of :
其中是待测信号和参考信号的相位差。基于公式(1)最终可以推导出:in is the phase difference between the signal under test and the reference signal. Based on formula (1), it can finally be deduced that:
同时，由于缝隙结构4和缝隙结构5耦合出来的信号功率很小，大部分的信号能够继续通过共面波导向后传播并进行后续的信号处理，从而实现了在线式微波相位的检测。At the same time, since the power of the signal coupled from the slot structure 4 and the slot structure 5 is very small, most of the signals can continue to propagate backward through the coplanar waveguide and undergo subsequent signal processing, thereby realizing online microwave phase detection.
本发明的T形结缝隙耦合在线式微波相位检测器的制备方法为：The preparation method of the T-junction gap-coupled on-line microwave phase detector of the present invention is:
1)准备4英寸高阻Si衬底，电阻率为4000Ω·cm，厚度为400mm；1) Prepare a 4-inch high-resistance Si substrate with a resistivity of 4000Ω cm and a thickness of 400mm;
2)热生长一层厚度为1.2mm的SiO2层；2) thermally growing a layer of SiO 2 layer with a thickness of 1.2 mm;
3)化学气相淀积(CVD)生长一层多晶硅，厚度为0.4mm；3) A layer of polysilicon is grown by chemical vapor deposition (CVD) with a thickness of 0.4 mm;
4)涂覆一层光刻胶并光刻，除多晶硅电阻区域以外，其他区域被光刻胶保护，并注入磷(P)离子，掺杂浓度为1015cm-2，形成终端电阻；4) Coating a layer of photoresist and photoetching, except for the polysilicon resistance area, other areas are protected by photoresist, and phosphorus (P) ions are implanted with a doping concentration of 10 15 cm -2 to form a terminal resistance;
5)涂覆一层光刻胶，光刻多晶硅电阻图形涂覆一层光刻胶，光刻多晶硅电阻图形，再通过干法刻蚀形成终端电阻；5) Coating a layer of photoresist, photoetching the polysilicon resistance pattern, coating a layer of photoresist, photoetching the polysilicon resistance pattern, and then forming terminal resistance by dry etching;
6)涂覆一层光刻胶，光刻去除共面波导传输线和输出电极处的光刻胶；6) Coating a layer of photoresist, and removing the photoresist at the coplanar waveguide transmission line and the output electrode by photolithography;
7)电子束蒸发(EBE)形成第一层金(Au)，厚度为0.3mm，去除光刻胶以及光刻胶上的Au，剥离形成传输线的第一层Au、隔绝直流电容下极板，以及输出电极；7) Electron beam evaporation (EBE) forms the first layer of gold (Au) with a thickness of 0.3mm, removes the photoresist and Au on the photoresist, peels off the first layer of Au forming the transmission line, and isolates the lower plate of the DC capacitor, and output electrodes;
8)涂覆一层光刻胶，光刻并保留隔绝直流电容；8) Coating a layer of photoresist, photolithography and retaining the isolated DC capacitor;
9)均匀涂覆一层聚酰亚胺并光刻图形，厚度为2mm，保留空气桥下方的聚酰亚胺作为牺牲层；9) Evenly coat a layer of polyimide and photolithographically pattern it, with a thickness of 2mm, and keep the polyimide under the air bridge as a sacrificial layer;
10)涂覆光刻胶，光刻去除空气桥、共面波导传输线以及输出电极位置的光刻胶；10) Coating photoresist, removing photoresist at air bridge, coplanar waveguide transmission line and output electrode position by photolithography;
11)蒸发500/1500/300A°的Ti/Au/Ti的种子层，去除顶部的Ti层后再电镀一层厚度为2mm的Au层；11) Evaporate the seed layer of Ti/Au/Ti at 500/1500/300A°, remove the top Ti layer and then electroplate an Au layer with a thickness of 2mm;
12)去除光刻胶以及光刻胶上的Au，形成空气桥、共面波导传输线和输出电极；12) removing the photoresist and Au on the photoresist to form air bridges, coplanar waveguide transmission lines and output electrodes;
13)深反应离子刻蚀(DRIE)共面波导传输线，制作缝隙结构；13) Deep Reactive Ion Etching (DRIE) coplanar waveguide transmission line to make slot structure;
14)深反应离子刻蚀(DRIE)衬底材料背面，制作热电堆下方的薄膜结构；14) Deep Reactive Ion Etching (DRIE) on the back of the substrate material to make a thin film structure under the thermopile;
15)释放聚酰亚胺牺牲层：显影液浸泡，去除空气桥下的聚酰亚胺牺牲层，去离子水稍稍浸泡，无水乙醇脱水，常温下挥发，晾干。15) Release the polyimide sacrificial layer: soak in developer solution, remove the polyimide sacrificial layer under the air bridge, soak in deionized water for a while, dehydrate with absolute ethanol, volatilize at room temperature, and dry in the air.
本发明的不同之处在于：The present invention differs in that:
本发明采用了缝隙结构，这种缝隙结构能够将在共面波导中传播的微波信号耦合出一小部分，并利用这部分耦合出的小信号来检测待测微波信号的相位大小，从而实现微波相位的在线式检测；对功率的合成采用T形结，对合成信号功率的检测采用直接加热式微波功率传感器来实现热电转换。另外由于耦合出的信号功率和待测信号相比非常小，因此对待测微波信号影响不大，该微波信号可以继续在共面波导上传播并进行后续的信号处理。The present invention adopts a slot structure, which can couple a small part of the microwave signal propagating in the coplanar waveguide, and use this part of the coupled small signal to detect the phase of the microwave signal to be measured, thereby realizing microwave On-line detection of phase; T-junction is used for power synthesis, and direct heating microwave power sensor is used to realize thermoelectric conversion for the detection of synthesized signal power. In addition, since the power of the coupled signal is very small compared with the signal to be tested, the microwave signal to be tested has little effect, and the microwave signal can continue to propagate on the coplanar waveguide and perform subsequent signal processing.
满足以上条件的结构即视为本发明的T形结缝隙耦合在线式微波相位检测器。A structure satisfying the above conditions is regarded as the T-junction slot-coupled on-line microwave phase detector of the present invention.
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