CN106841793B - The online given frequency microwave phase detector device of clamped beam indirect heating - Google Patents
The online given frequency microwave phase detector device of clamped beam indirect heating Download PDFInfo
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Abstract
The online given frequency microwave phase detector device of clamped beam indirect heating of the invention is made of the cascade of six port clamped beam couplers, microwave phase detector device and indirect heating type microwave power detector；Six port clamped beam couplers are made of co-planar waveguide, dielectric layer, air layer and clamped beam；Co-planar waveguide is produced on SiO2On layer, the lower section metallization medium layer of clamped beam, and coupled capacitor structure is collectively formed with air layer, the co-planar waveguide length between two clamped beams is λ/4；The first port of six port clamped beam couplers is identical to third port, the 4th port and first port to fifth port, the power degree of coupling of the 6th port difference, measured signal is inputted through the first port of six port clamped beam couplers, indirect heating type microwave power detector is output to by third port and fifth port, microwave phase detector device is output to by the 4th port and the 6th port, junior's processing circuit is exported by second port；Finally realize the 0-360 ° of phase on-line checking to given frequency signal.
Description
Technical field
The invention proposes the online given frequency microwave phase detector devices of clamped beam indirect heating, belong to microelectron-mechanical
The technical field of system.
Background technique
Microwave signal phase measurement occupies highly important status in microwave measurement.With the increase of frequency, signal
Wavelength is gradually approached with component sizes various in circuit, and voltage, electric current exist all in the form of wave in circuit, the phase of signal
Delay is so that not only the voltage at different location, electric current are different in synchronization amplitude in circuit, but also at same position
Voltage, electric current it is also different in different moments.It therefore is necessary in the phase that signal was grasped and controlled to microwave frequency band
, the phase of microwave signal is also just at an important measurement parameter.The present invention is based on a kind of realization of Si technological design
The online given frequency microwave phase detector device of the clamped beam indirect heating of online phase-detection.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of online given frequency microwave phase inspections of clamped beam indirect heating
Device is surveyed, fraction signal is coupled using six port clamped beam couplers and carries out phase-detection, and most of signal that detects can be with
It is input in next stage processing circuit, realizes the 0-360 ° of phase on-line checking to given frequency signal, and with low-power consumption
Benefit.
Technical solution: the online given frequency microwave phase detector device of clamped beam indirect heating of the invention is consolidated by six ports
Strutbeam coupler, microwave phase detector device, the first indirect heating type microwave power detector and the second indirect heating type micro-wave function
The cascade of rate sensor is constituted；
In the present invention, the first port of six port clamped beam couplers is to third port, the 4th port and first end
Mouthful to fifth port, the power degree of coupling of the 6th port difference it is identical, measured signal through six port clamped beam couplers first
Port input is respectively outputted to the first indirect heating type microwave power detector and second indirectly by third port and fifth port
Heated microwave power sensor, first be respectively outputted to by the 4th port and the 6th port in microwave phase detector device
Wilkinson power combiner and the 2nd Wilkinson power combiner are output to junior's processing circuit by second port；
The input termination reference signal input of Wilkinson power divider, the output port of Wilkinson power divider connect respectively
First Wilkinson power combiner and the 2nd Wilkinson power combiner, and by the first Wilkinson power combiner
Third indirect heating type microwave power detector and the 4th indirect heating are respectively outputted to the 2nd Wilkinson power combiner
Type micro-wave power sensor；
Wherein, the structure of six port clamped beam couplers is symmetrical set with its center line, by co-planar waveguide, medium
Layer, air layer and clamped beam are constituted；Co-planar waveguide is produced on SiO2On layer, SiO2Layer makes on a si substrate, the anchoring area of clamped beam
It is produced on co-planar waveguide, the lower section metallization medium layer of clamped beam, and collectively form coupled capacitor knot with air layer, clamped beam
Structure, the co-planar waveguide length between two clamped beams are λ/4.
The utility model has the advantages that
1) the online given frequency microwave phase detector device of clamped beam indirect heating of the invention applies six port clamped beams
Coupler carries out phase-detection to couple fraction signal, and most of signal can be input in next stage processing circuit, real
Now to 0-360 ° of phase on-line checking of given frequency signal；
2) the online given frequency microwave phase detector device application indirect heating of clamped beam indirect heating of the invention declines
Wave power sensor detects the power of microwave signal, has preferable microwave property and without DC power；
3) two Wilkinson power combiners of microwave phase detector module application in the present invention, a Wilkinson
Power divider and two indirect heating type microwave power detectors realize 0-360 ° of phase-detection.
Detailed description of the invention
Fig. 1 is the functional block diagram of the online given frequency microwave phase detector device of clamped beam indirect heating of the present invention,
Fig. 2 is the top view of six port clamped beam couplers,
Fig. 3 is AA ' the directional profile figure of six port clamped beam coupler of Fig. 2,
Fig. 4 is the top view of Wilkinson power divider/synthesizer,
Fig. 5 is the top view of indirect heating type microwave power detector,
Fig. 6 is AA ' the directional profile figure of Fig. 5 indirect heating type microwave power detector.
It include: six port clamped beam couplers 1, microwave phase detector device 2, the first indirect heating type microwave power biography in figure
Sensor 3-1, the second indirect heating type microwave power detector 3-2, third indirect heating type microwave power detector 3-3, the 4th
Indirect heating type microwave power detector 3-4, the first Wilkinson power combiner 4-1, the 2nd Wilkinson power combing
Device 4-2, Wilkinson power divider 5, Si substrate 6, SiO2Layer 7, co-planar waveguide 8, anchoring area 9, dielectric layer 10, clamped beam 11,
Air layer 12, air bridges 13, asymmetrical coplanar stripline 14, isolation resistance 15, terminal resistance 16, P-type semiconductor arm 17, N-type half
Conductor arm 18, output electrode 19, hot end 20, cold end 21, substrate film structure 22, first port 1-1, second port 1-2, third
Port 1-3, the 4th port 1-4, fifth port 1-5, the 6th port 1-6, the 7th port 5-1, the 8th port 5-2, the 9th port
5-3。
Specific embodiment
The online given frequency microwave phase detector device of clamped beam indirect heating of the present invention is by six port clamped beam couplers
1, microwave phase detector device 2, the first indirect heating type microwave power detector 3-1 and the second indirect heating type microwave power sensing
Device 3-2 cascade is constituted；
First port 1-1 to third port 1-3, the 4th port 1-4 and the first port 1- of six port clamped beam couplers 1
1 to fifth port 1-5, the power degree of coupling difference of the 6th port 1-6 is identical, and measured signal is through six port clamped beam couplers 1
First port 1-1 input, by third port 1-3 and fifth port 1-5 be output to the first indirect heating type microwave power sensing
Device 3-1 and the second indirect heating type microwave power detector 3-2, is output to microwave phase by the 4th port 1-4 and the 6th port 1-6
Bit detector 2 is output to junior's processing circuit by second port 1-2, realizes the phase-detection to given frequency signal, and examine
Signal after survey can be used for other processing circuits.
Microwave phase detector device 2 is by third indirect heating type microwave power detector 3-3, the 4th indirect heating type micro-wave function
Rate sensor 3-4, the first Wilkinson power combiner 4-1, the 2nd Wilkinson power combiner 4-2, Wilkinson function
Rate distributor 5 is constituted；First Wilkinson power combiner 4-1, the 2nd Wilkinson power combiner 4-2, and
The topological structure of Wilkinson power divider 5 is identical, by co-planar waveguide 8, asymmetrical coplanar stripline 14 and air bridges 13, every
Constituted from resistance 15, be Wilkinson power divider 5 when signal input from the 7th port 5-1, signal from the 8th port 5-2,
It is the first Wilkinson power combiner 4-1 or the 2nd Wilkinson power combiner 4-2 when 9th port 5-3 is inputted；The
One Wilkinson power combiner 4-1, the 2nd Wilkinson power combiner 4-2 is by Si substrate 6, SiO2Layer 7, co-planar waveguide
8, terminal resistance 16, P-type semiconductor arm 17, N-type semiconductor arm 18, the composition of output electrode 19.Its indirect heated microwave power
The testing principle of sensor and microwave phase can be explained as follows:
Indirect heating type microwave power detector: microwave power as shown in Figure 5 is inputted from input port, passes through co-planar waveguide
8, which are input to terminal resistance 16, is converted to heat；P-type semiconductor arm 17 and N-type semiconductor arm 18 constitute thermocouple, and thermocouple leans on
Nearly 16 region of terminal resistance is as hot end 20, and thermocouple is close to 19 region of output electrode as cold end 21；It is imitated according to Seebeck
It answers, inputs microwave power size known to the thermoelectrical potential of output electrode 19 by measuring；20 back of hot end of thermocouple subtracts substrate
Thin composition substrate film structure 22 is to improve detection sensitivity.
Phase detectors: third port 1-3 and fiveth of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1
Port 1-5 is separately input to the first indirect heating type microwave power detector 3-1 and the second indirect heating type microwave power sensing
Device 3-2 carries out coupled power detection, fourth port 1-4 and sixth port 1-6 of the microwave signal through six port clamped beam couplers 1
It is input to microwave phase detector device 2 and carries out phase-detection；It is coplanar between two clamped beams 11 of six port clamped beam couplers 1
8 length of waveguide is λ/4, is at this time 90 ° by the two way microwave signals phase difference of the 4th port 1-4 and the 6th port 1-6；Input
Power Pr, the reference signal of f (known to frequency) identical as measured signal frequency, reference signal is through Wilkinson power divider 5
It is divided into two-way power and the identical signal of phase, the two-way measured signal with the 4th port 1-4 and the 6th port 1-6 is through first
Wilkinson power combiner 4-1 and the 2nd Wilkinson power combiner 4-2 carries out power combing；Third indirect heating type
Microwave power detector 3-3 and the 4th indirect heating type microwave power detector 3-4 is respectively to the power after the synthesis of left and right two-way
Pcs1, Pcs2It is detected, and the phase difference to be measured between reference signal is obtained by formula (1)
P4, P6For the coupled power of the 4th port 1-4 and the 6th port 1-6, and P4=P3, P6=P5Its watt level by
Third indirect heating type microwave power detector 3-3 and the 4th indirect heating type microwave power detector 3-4 are measured.
The preparation method of the online given frequency microwave phase detector device of clamped beam indirect heating including the following steps:
1) prepare 4 inches of high resistant Si substrates 6, resistivity is 4000 Ω cm, with a thickness of 400mm；
2) thermally grown a layer thickness is the SiO of 1.2mm2Layer 7；
3) chemical vapor deposition (CVD) grows one layer of polysilicon, with a thickness of 0.4mm；
4) one layer photoresist of coating and photoetching, in addition to polysilicon resistance region, other regions are photo-etched glue protection, and infuse
Enter phosphorus (P) ion, doping concentration 1015cm-2, form isolation resistance 15 and terminal resistance 16；
5) layer photoresist is coated, P is used+Photolithography plate carries out photoetching, in addition to 17 region of P-type semiconductor arm, other regions
It is photo-etched glue protection, is then poured into boron (B) ion, doping concentration 1016cm-2, form the P-type semiconductor arm 17 of thermocouple；
6) layer photoresist is coated, N is used+Photolithography plate carries out photoetching, in addition to 18 region of N-type semiconductor arm, other regions
It is photo-etched glue protection, is then poured into phosphorus (P) ion, doping concentration 1016cm-2, form the N-type semiconductor arm 18 of thermocouple；
7) layer photoresist, photoetching thermoelectric pile and polysilicon resistance figure are coated, then thermocouple is formed by dry etching
Arm and polysilicon resistance；
8) layer photoresist is coated, photoetching removes co-planar waveguide 8, asymmetrical coplanar stripline 14, metal interconnecting wires and defeated
Photoresist at electrode 19 out；
9) electron beam evaporation (EBE) forms first layer gold (Au), with a thickness of 0.3mm, removes on photoresist and photoresist
Au, removing forms the first layer Au, thermoelectric pile metal interconnecting wires and output electrode of co-planar waveguide 8 and asymmetric coplanar strip 14
19；
10) (LPCVD) one layer of Si is deposited3N4, with a thickness of 0.1mm；
11) layer photoresist, photoetching and the photoresist for retaining 11 lower section of clamped beam, dry etching Si are coated3N4, formed and be situated between
Matter layer 10；
12) one layer of air layer 13 and litho pattern are uniformly coated, with a thickness of 2mm, the polyamides for retaining 11 lower section of clamped beam is sub-
Amine is as sacrificial layer；
13) photoresist is coated, photoetching removes clamped beam 11, anchoring area 9, co-planar waveguide 8, asymmetrical coplanar stripline 14 and output
The photoresist of 19 position of electrode；
14) seed layer for evaporating 500/1500/300A ° of Ti/Au/Ti, removes one thickness of re-plating after the Ti layer at top
Degree is the Au layer of 2mm；
15) Au on photoresist and photoresist is removed, clamped beam 11, anchoring area 9, co-planar waveguide 8, asymmetric coplanar is formed
Band line 14 and output electrode 19；
16) deep reaction ion etching (DRIE) the substrate material back side makes membrane structure 23；
17) discharge polyimide sacrificial layer: developer solution impregnates, and removes the polyimide sacrificial layer under clamped beam, deionization
Water impregnates slightly, dehydrated alcohol dehydration, volatilizees, dries under room temperature.
Difference with the prior art of the present invention is:
Present invention employs novel six ports clamped beam coupled structures, wherein the first end of six port clamped beam couplers
Mouth is identical to third port, the 4th port and first port to fifth port, the power degree of coupling of the 6th port difference；It is this solid
Strutbeam coupled structure is coupled out the signal of fraction from the microwave signal of coplanar wave guide transmission to detect the phase of microwave signal
Size, and most of signal can be input in next stage processing circuit；It is examined using indirect heating type microwave power detector
The power of microwave signal is surveyed, there is preferable microwave property and without DC power；The online unknown frequency of clamped beam of the invention
Microwave phase detector device realizes the 0-360 ° of phase on-line checking to unknown frequency signal.
The structure for meeting conditions above is considered as the online unknown frequency microwave phase of clamped beam indirect heating of the invention
Detector.
Claims (2)
1. a kind of online given frequency microwave phase detector device of clamped beam indirect heating, it is characterised in that the phase detectors by
Six port clamped beam couplers (1), microwave phase detector device (2) and the first indirect heating type microwave power detector (3-1) and
The cascade of second indirect heating type microwave power detector (3-2) is constituted；Wherein, the first end of six port clamped beam couplers (1)
Mouth (1-1) to third port (1-3), the 4th port (1-4) and first port (1-1) arrive fifth port (1-5), the 6th port
The power degree of coupling difference of (1-6) is identical, and measured signal is inputted through first port (1-1), by third port (1-3) and the 5th end
Mouth (1-5) is respectively outputted to the first indirect heating type microwave power detector (3-1), the second indirect heating type microwave power sensing
Device (3-2), first be respectively outputted to by the 4th port (1-4) and the 6th port (1-6) in microwave phase detector device (2)
Wilkinson power combiner (4-1) and the 2nd Wilkinson power combiner (4-2), are output to by second port (1-2)
Junior's processing circuit；The input termination reference signal input of Wilkinson power divider (5), Wilkinson power divider
(5) output port meets the first Wilkinson power combiner (4-1) and the 2nd Wilkinson power combiner (4- respectively
2), and by the first Wilkinson power combiner (4-1) and the 2nd Wilkinson power combiner (4-2) it is respectively outputted to
Three indirect heating type microwave power detectors (3-3) and the 4th indirect heating type microwave power detector (3-4)；
Wherein, the structure of six port clamped beam couplers (1) is symmetrical set with its center line, by co-planar waveguide (8), medium
Layer (10), air layer (12) and clamped beam (11) are constituted；Co-planar waveguide (8) is produced on SiO2On layer (7), SiO2Layer (7) is produced on
On Si substrate (6), the anchoring area (9) of clamped beam (11) is produced on co-planar waveguide (8), the lower section deposition medium of clamped beam (11)
Layer (10), and coupled capacitor structure is collectively formed with air layer (12), clamped beam (11), it is coplanar between two clamped beams (11)
Waveguide (8) length is λ/4.
2. the online given frequency microwave phase detector device of clamped beam indirect heating as described in claim 1, it is characterised in that
Direct-heating type microwave power detector is by Si substrate (6), SiO2Layer (7), co-planar waveguide (8), terminal resistance (16), p-type half
Conductor arm (17), N-type semiconductor arm (18) and output electrode (19) are constituted；Microwave power is input to end by co-planar waveguide (8)
End resistance (16) is converted to heat；P-type semiconductor arm (17) and N-type semiconductor arm (18) constitute thermocouple, and thermocouple is close
Terminal resistance (16) region is as hot end (20), close to output electrode (19) region as cold end (21).
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