CN106841782B - Silicon substrate cantilever beam couples direct-heating type unknown frequency millimeter wave phase detectors - Google Patents
Silicon substrate cantilever beam couples direct-heating type unknown frequency millimeter wave phase detectors Download PDFInfo
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- CN106841782B CN106841782B CN201710052621.8A CN201710052621A CN106841782B CN 106841782 B CN106841782 B CN 106841782B CN 201710052621 A CN201710052621 A CN 201710052621A CN 106841782 B CN106841782 B CN 106841782B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
Abstract
Silicon substrate cantilever beam of the invention couples direct-heating type unknown frequency millimeter wave phase detectors, and structure mainly includes cantilever beam coupled structure, power divider/synthesizer, direct-heating type microwave power detector and switch.Cantilever beam coupled structure includes two groups of cantilever beams, and every group of cantilever beam is made of two symmetrical cantilever beams, and the electrical length of CPW transmission line is λ/4 at the centre frequency 35GHz in measured signal frequency range between two cantilever beams.For the detection for realizing unknown frequency millimeter wave phase, first progress frequency detecting.Frequency detecting is realized by the synthesis power for measuring the two-way coupled signal that phase difference is 90 degree at the centre frequency 35GHz in measured signal frequency range using direct-heating type microwave power detector；Phase-detection is by respectively with the reference signal synthesis after two-way equal part, detecting synthesis power also with direct-heating type microwave power detector, to obtain the phase of measured signal for the two-way coupled signal that phase difference is 90 degree at centre frequency 35GHz.
Description
Technical field
The invention proposes silicon substrate cantilever beams to couple direct-heating type unknown frequency millimeter wave phase detectors, belongs to micro- electricity
The technical field of sub- mechanical system (MEMS).
Background technique
Microwave phase is one of the three big parameters (amplitude, frequency, phase) for characterizing microwave signal, its production in microwave signal
Important role is all play in raw, propagation and received links, is the important component of electromagnetic measurement.It is fixed in microwave
Position, phase-modulator, phase-shift keying (PSK) and near-field diagnostic etc., microwave phase detector, which suffers from, to be widely applied.Phase-detection
Signal decomposition method can be used or vector synthesis realizes that compared with signal decomposition method, vector synthesis principle and structure are more simple
It is single, it is easy to realize the miniaturization of signal detection and integrated using mature MEMS technology.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of silicon substrate cantilever beams to couple direct-heating type unknown frequency millimeter wave
Phase detectors carry out coupled power, frequency detecting and phase using cantilever beam coupled structure coupling unit measured signal respectively
Detection, realizes the online detection of unknown frequency millimeter-wave signal, principle and structure are simple, save chip area.
Technical solution: in order to solve the above technical problems, the invention proposes a kind of silicon substrate cantilever beams to couple direct-heating type
Unknown frequency millimeter wave phase detectors.The phase detectors by cantilever beam coupled structure, power combiner/distributor, directly
Heated microwave power sensor and switch are constituted；Wherein, cantilever beam coupled structure up and down, bilateral symmetry, by CPW central signal
Line, transmission line ground wire, cantilever beam, cantilever beam anchoring area are constituted, and cantilever beam is placed in the top of CPW central signal line, in cantilever beam
There is one layer of Si in lower section3N4Dielectric layer covers central signal line；Measured signal is inputted by the first port of cantilever beam coupled structure, from
Second port is output to junior's circuit；The signal of two cantilever beams in top coupling is exported by third port and the 4th port, third
Port is connected with the 7th port of first switch, and the 4th port is connected with the tenth port of second switch, and the 8th of first switch the
Port is connected with the first direct-heating type microwave power detector, the 13rd port phase of the 9th port and the first power combiner
Even, the tenth Single port of second switch is connected with the second direct-heating type microwave power detector, the tenth Two-port netwerk and the first function
14th port of rate synthesizer is connected, finally, the 15th port of the first power combiner connects third and directly heats type micro-wave
Power sensor；The signal of two cantilever beams in lower section coupling is exported by fifth port and the 6th port, fifth port and the second function
19th port of rate synthesizer is connected, and the 6th port is connected with the 20th Two-port netwerk of third power combiner, measured signal
It is inputted from the 16th port of power divider, the 17th port of power divider and the 20th end of the second power combiner
Mouth is connected, and the 18th port is connected with the 23rd port of third power combiner, and the 21st of the second power combiner the
Port connects the 4th direct-heating type microwave power detector, and the 24th port of third power combiner connects the 5th and directly heats
Type micro-wave power sensor.
Direct-heating type microwave power detector by CPW central signal line, transmission line ground wire, MIM capacitor, terminal resistance,
It exports Pad to constitute, for detecting the watt level of microwave signal, terminal resistance is designed as the matched load of CPW transmission line, simultaneously
As the semiconductor arm of thermocouple, the Si substrate below terminal resistance hot end is etched, for increasing the sensitivity of sensor,
In order to improve the temperature difference of hot and cold side, terminal resistance is designed as trapezoidal.
Millimeter-wave signal to be measured is inputted from the first port of cantilever beam coupled structure, and reference signal is by the of power divider
The input of 16 ports；When carrying out millimeter-wave frequency and phase-detection, coupled signal is input to by switch directly heats first
Type micro-wave power sensor measures the watt level of coupled signal, then by switching phase at two-way centre frequency 35GHz
Difference is input to the first power combiner for 90 degree of coupled signal, is equally closed using the detection of direct-heating type microwave power detector
At signal power size, the frequency of millimeter-wave signal can be extrapolated by the size of coupled signal and composite signal；In addition two-way
The coupled signal that phase difference is 90 degree at centre frequency 35GHz is synthesized with the reference signal after power equal part respectively, by directly adding
Hot type microwave power detector detects the size of two-way composite signal power, and simultaneous equations can solve millimeter-wave signal to be measured
Phase, it can be achieved that unknown frequency millimeter wave whole cycle range internal phase angle measurement.
The utility model has the advantages that the present invention has the advantage that relative to existing phase detectors
1. phase detectors of the invention use cantilever beam coupled modes, online phase-detection can be realized, it is to be measured
Signal can continue to output next stage use after tested；
2. phase detectors principle of the invention and structure are simple, chip area is smaller, all by the passive device group origin cause of formation
DC power may be not present；
3. phase detectors of the invention due to using direct-heating type microwave power detector realize coupled power measurement,
Sensitivity is larger.
4. compatible with COM S technique, suitable for mass production, at low cost, high reliablity.
Detailed description of the invention
Fig. 1 is the realization knot that silicon substrate cantilever beam of the invention couples direct-heating type unknown frequency millimeter wave phase detectors
Structure schematic diagram；
Fig. 2 be cantilever beam coupled structure of the present invention A-A ' to sectional view；
Fig. 3 is the top view of power divider/synthesizer of the present invention；
Fig. 4 is the top view of direct-heating type microwave power detector of the present invention；
Fig. 5 be direct-heating type microwave power detector of the present invention B-B ' to sectional view；
Fig. 6 is the top view that the present invention switchs；
Fig. 7 be the C-C ' that switchs of the present invention to sectional view.
It include: high resistant Si substrate 1, SiO in figure2Layer 2, CPW central signal line 3, transmission line ground wire 4, cantilever beam 5, cantilever
Beam anchoring area 6, ACPS signal wire 7, MIM capacitor 8, isolation resistance 9, terminal resistance 10, Si3N4Dielectric layer 11 exports Pad12, drop-down
Electrode 13, cantilever beam coupled structure 14, first switch 15, second switch 16, first port 1-1, second port 1-2, third end
Mouth 1-3, the 4th port 1-4, fifth port 1-5, the 6th port 1-6, the 7th port 2-1, the 8th port 2-2, the 9th port 2-
3, the tenth port 3-1, the tenth Single port 3-2, the tenth Two-port netwerk 3-3, the 13rd port 4-1, the 14th port 4-2, the 15th
Port 4-3, the 16th port 5-1, the 17th port 5-2, the 18th port 5-3, the 19th port 6-1, the 20th port 6-
2, the 20th Single port 6-3, the 20th Two-port netwerk 7-1, the 23rd port 7-2, the 24th port 7-3.
Specific embodiment
The following further describes the specific embodiments of the present invention with reference to the drawings.
Referring to Fig. 1-7, the invention proposes a kind of silicon substrate cantilever beams to couple direct-heating type unknown frequency millimeter wave phase
Detector.Realize that structure specifically includes that cantilever beam coupled structure 14, power divider/synthesizer, direct-heating type microwave power pass
Sensor, switch.Wherein, cantilever beam coupled structure 14 is used to couple the Partial Power of measured signal, is used for phase-detection；Power closes
The synthesis grown up to be a useful person for two paths of signals, for power divider for that will be divided into two paths of signals by signal all the way, the two is having the same
Structure；Direct-heating type microwave power detector is used to detect the power of microwave signal, and principle is based on Joule effect and Sai Bei
Gram effect；Switch is for converting coupled power detection and frequency detecting two states.
Cantilever beam coupled structure 14 is made of CPW central signal line 3, transmission line ground wire 4, cantilever beam 5, cantilever beam anchoring area 6.
Two groups of cantilever beams 5 are suspended from 3 top of CPW central signal line, and centre is separated with Si3N4Dielectric layer 11 and air, an equivalent dual dielectric layer
MIM capacitor, 5 end of cantilever beam by cantilever beam anchoring area 6 with coupling branch CPW central signal line 3 be connected, every group of cantilever beam
5 include the cantilever beam 5 of two symmetric designs, and the CPW transmission line electrical length between two groups of cantilever beams 5 is in measured signal frequency range
It is λ/4 at interior centre frequency 35GHz.By adjusting the shape of the transmission line ground wire 4 near cantilever beam 5, change CPW transmission line
Impedance, for compensating the introducing bring capacitance variations of cantilever beam 5.
Power divider/synthesizer by CPW central signal line 3, transmission line ground wire 4, ACPS signal wire 7, MIM capacitor 8 and every
It is constituted from resistance 9.The characteristic impedance of CPW transmission line is 50 Ω, and the characteristic impedance of ACPS transmission line is 70.7 Ω, electrical length be λ/
8, the resistance value of isolation resistance is 100 Ω.MIM capacitor 8 is across between two ground wires, is located at 3 top of CPW central signal line, is situated between
Electric layer is one layer of Si3N4.Transmission line uses bending structure, while being compensated in corner, for reducing chip area.
Direct-heating type microwave power detector is by CPW central signal line 3, transmission line ground wire 4, MIM capacitor 8, terminal electricity
Resistance 10, output Pad12 are constituted, and for detecting the watt level of microwave signal, terminal resistance 10 is designed as the matching of CPW transmission line
Load, while the semiconductor arm as thermocouple, MIM capacitor 8 are used as capacitance, play and block DC channel and microwave access
Effect, the Si substrate below 10 hot end of terminal resistance is etched, cold and hot in order to improve for increasing the sensitivity of sensor
The temperature difference at end, terminal resistance 10 are designed as trapezoidal.
Switch is made of CPW central signal line 3, transmission line ground wire 4, cantilever beam 5, cantilever beam anchoring area 6 and pull-down electrode 13,
One layer of Si is covered in pull-down electrode 133N4Dielectric layer 11, when not applying DC voltage, two branches are in an off state, and are passed through
Apply certain direct current biasing in pull-down electrode 13, it can be achieved that corresponding to the conducting of branch, further realizes coupled power detection
With the conversion of frequency detecting two states.
Measured signal is inputted from first port 1-1, by CPW transmission line, enters next stage by second port 1-2.It is located at
The meeting coupling unit power of cantilever beam 5 of 3 top of CPW central signal line, due to two 5 symmetric designs of cantilever beam in every group, so
The microwave power of coupling is equal.Coupled signal all the way, centre frequency f are respectively selected in two groups of cantilever beams 50Phase difference is at=35GHz
90 degree, phase difference may be expressed as: when frequency f
Two-way coupled signal can indicate are as follows:
Wherein, a1And a2The respectively amplitude of two-way coupled signal, ω are the angular frequency of input signal,For initial phase,
By switching so that coupled signal is input to direct-heating type microwave power detector, available a1And a2Size.Synthesis letter
Number power may be expressed as:
For the power P for obtaining composite signal, by switch so that coupled signal is input to power combiner, and by directly plus
Hot type microwave power detector carries out power detection.By (1) and (4) formula, the relationship of signal frequency and output power can be indicated
Are as follows:
According to above formula relationship, the frequency of millimeter-wave signal to be measured can be obtained by the output of direct-heating type microwave power detector
Rate.
When carrying out phase-detection, in addition phase difference is 90 at the centre frequency 35GHz in two-way measured signal frequency range
The coupled signal of degree is synthesized with the reference signal after power equal part respectively, and the reference signal after power equal part can indicate are as follows:
v3=a3cos(ωt+φ) (6)
Then the watt level of composite signal is respectively as follows:
P1And P2Size detected by the microwave power detector of terminal, according to measured signal phase shown in (7) and (8)
The relationship of the size of position and composite signal power, only existsOne unknown quantity, by the defeated of direct-heating type microwave power detector
The phase of the available millimeter-wave signal to be measured of thermoelectrical potential is, it can be achieved that unknown frequency millimeter wave phase within the scope of whole cycle out
The measurement at angle.
The realization structure of silicon substrate cantilever beam coupling direct-heating type unknown frequency millimeter wave phase detectors of the invention
The preparation method is as follows:
1) prepare 4 inches of high resistant Si substrates 1, conductivity is 4000 Ω cm, with a thickness of 400 μm；
2) thermally grown one layer of SiO2Layer 2, with a thickness of 1.2 μm；
3) chemical vapor deposition (CVD) grows one layer of polysilicon, with a thickness of 0.4 μm；
4) one layer photoresist of coating and photoetching, in addition to the exposure of polysilicon resistance region, other regions are photo-etched glue protection,
It is then poured into phosphorus (P) ion, doping concentration 1015cm-2, form isolation resistance 9 and terminal resistance 10；
5) layer photoresist, photoetching polysilicon resistance figure are coated, then isolation resistance 9 and terminal are formed by dry etching
Resistance 10；
6) layer photoresist is coated, photoetching removes the photoresist at transmission line, pull-down electrode 13 and output Pad12；
7) electron beam evaporation forms first layer gold (Au), with a thickness of 0.3 μm, removes the Au on photoresist and photoresist,
Removing forms first layer Au, pull-down electrode 13 and the output Pad12 of transmission line；
8) LPCVD deposits one layer of Si3N4, with a thickness of 0.1 μm；
9) layer photoresist, photoetching and the photoresist for retaining 5 lower section of MIM capacitor 8 and cantilever beam, dry etching are coated
Si3N4, form Si3N4Dielectric layer 11；
10) a strata acid imide and litho pattern are uniformly coated, with a thickness of 2 μm, retains the polyimides of 5 lower section of cantilever beam
As sacrificial layer；
11) photoresist is coated, photoetching removes cantilever beam 5, cantilever beam anchoring area 6, transmission line, MIM capacitor 8, output Pad12
The photoresist set；
12) seed layer for evaporating 500/1500/300A ° of Ti/Au/Ti, removes one thickness of re-plating after the Ti layer at top
The Au layer that degree is 2 μm；
13) Au on photoresist and photoresist is removed, cantilever beam 5, cantilever beam anchoring area 6, transmission line, MIM capacitor 8 are formed
With output Pad12；
14) deep reaction ion etching (DRIE) the substrate material back side makes the membrane structure below thermoelectric pile；
15) discharge polyimide sacrificial layer: developer solution impregnates, and removes the polyimide sacrificial layer under cantilever beam 5, deionization
Water impregnates slightly, dehydrated alcohol dehydration, volatilizees, dries under room temperature.
Distinguish whether be the structure standard it is as follows:
Silicon substrate cantilever beam of the invention couples direct-heating type unknown frequency millimeter wave phase detectors, and structured substrate is height
Hinder Si.Millimeter-wave signal to be measured is inputted by first port 1-1, is exported by second port 1-2, and 3 top of CPW central signal line is located at
Two groups of 5 coupling unit of cantilever beam millimeter-wave signals to be measured, every group of cantilever beam 5 includes the cantilever beam 5 of two symmetric designs, two
The power that cantilever beam 5 couples is equal, and the coupled signal of one of cantilever beam 5 is used for coupled power and frequency detecting, two kinds of shapes
State conversion realizes that the coupled signal of another cantilever beam 5 is used for phase-detection by switch；First by switch so that coupling letter
Direct-heating type microwave power detector detection coupled power size number is directly inputted to, then by switch so that two-way is in institute
The coupled signal that phase difference is 90 degree at the centre frequency 35GHz surveyed in signal frequency range carries out synthesis and by direct-heating type
Microwave power detector detection synthesis power, to extrapolate the frequency of measured signal；When phase-detection, two-way is being surveyed into letter
The coupled signal that phase difference is 90 degree at centre frequency 35GHz in number frequency range, respectively with the reference letter after two-way equal part
Number synthesis, also with direct-heating type microwave power detector detect synthesis power, to obtain the phase of measured signal.
The structure for meeting conditions above is considered as silicon substrate cantilever beam coupling direct-heating type unknown frequency millimeter of the invention
Wave phase detector.
Claims (2)
1. a kind of silicon substrate cantilever beam couples direct-heating type unknown frequency millimeter wave phase detectors, it is characterized in that: the phase is examined
Device is surveyed by cantilever beam coupled structure (14), power combiner/distributor, direct-heating type microwave power detector and switch structure
At；Wherein, cantilever beam coupled structure (14) up and down, bilateral symmetry, by CPW central signal line (3), transmission line ground wire (4), cantilever
Beam (5), cantilever beam anchoring area (6) are constituted, and cantilever beam (5) is placed in the top of CPW central signal line (3), in the lower section of cantilever beam (5)
There is one layer of Si3N4Dielectric layer (11) covers CPW central signal line (3)；Measured signal by cantilever beam coupled structure (14) first end
Mouth (1-1) input, is output to junior's circuit from second port (1-2)；The signal of two cantilever beams (5) in top coupling is by third end
Mouth (1-3) and the output of the 4th port (1-4), third port (1-3) are connected with the 7th port (2-1) of first switch (15), the
Four ports (1-4) are connected with the tenth port (3-1) of second switch (16), the 8th port (2-2) of first switch (15) and the
One direct heated microwave power sensor is connected, the 9th port (2-3) and the first power combiner of first switch (15)
13rd port (4-1) is connected, and the tenth Single port (3-2) and the second direct-heating type microwave power of second switch (16) sense
Device is connected, and the tenth Two-port netwerk (3-3) of second switch (16) is connected with the 14th port (4-2) of the first power combiner, most
Afterwards, the 15th port (4-3) of the first power combiner connects third direct-heating type microwave power detector；The cantilever of lower section two
The signal of beam (5) coupling is exported by fifth port (1-5) and the 6th port (1-6), fifth port (1-5) and the second power combing
19th port (6-1) of device is connected, and the 6th port (1-6) is connected with the 20th Two-port netwerk (7-1) of third power combiner,
Reference signal is inputted from the 16th port (5-1) of power divider, the 17th port (5-2) of power divider and the second function
20th port (6-2) of rate synthesizer is connected, the 23rd port of the 18th port (5-3) and third power combiner
(7-2) is connected, and the 20th Single port (6-3) of the second power combiner connects the 4th direct-heating type microwave power detector, the
24th port (7-3) of three power combiners connects the 5th direct-heating type microwave power detector.
2. silicon substrate cantilever beam according to claim 1 couples direct-heating type unknown frequency millimeter wave phase detectors,
Be characterized in: direct-heating type microwave power detector is by CPW central signal line (3), transmission line ground wire (4), MIM capacitor (8), end
Resistance (10), output Pad (12) are held to constitute, for detecting the watt level of microwave signal, terminal resistance (10) is designed as CPW biography
The matched load of defeated line, while the semiconductor arm as thermocouple, the Si substrate below terminal resistance (10) hot end are etched,
For increasing the sensitivity of sensor, in order to improve the temperature difference of hot and cold side, terminal resistance (10) is designed as trapezoidal.
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