CN106841794B - Clamped beam T junction directly heats online given frequency microwave phase detector device - Google Patents
Clamped beam T junction directly heats online given frequency microwave phase detector device Download PDFInfo
- Publication number
- CN106841794B CN106841794B CN201710052690.9A CN201710052690A CN106841794B CN 106841794 B CN106841794 B CN 106841794B CN 201710052690 A CN201710052690 A CN 201710052690A CN 106841794 B CN106841794 B CN 106841794B
- Authority
- CN
- China
- Prior art keywords
- port
- clamped beam
- power
- microwave
- direct
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
Abstract
Clamped beam T junction of the invention directly heats online given frequency microwave phase detector device and is made of six port clamped beam couplers, microwave phase detector device and direct-heating type microwave power detector；Six port clamped beam couplers are made of co-planar waveguide, dielectric layer, air layer and clamped beam；Co-planar waveguide is in SiO2On layer, the lower section metallization medium layer of clamped beam, and and air layer, clamped beam collectively form coupled capacitor, the co-planar waveguide length between two clamped beams be λ/4；The first port of six port clamped beam couplers is identical with the power degree of coupling of the 4th port and first port to fifth port, the 6th port to third port, measured signal is inputted through the first port of six port clamped beam couplers, direct-heating type microwave power detector is output to by third port and fifth port, microwave phase detector device is output to by the 4th port and the 6th port, junior's processing circuit is output to by second port；Realize the 0-360 ° of phase on-line checking to given frequency signal.
Description
Technical field
The invention proposes clamped beam T junctions to directly heat online given frequency microwave phase detector device, belongs to micro- electricity
The technical field of sub- mechanical system.
Background technique
The phase-detection of microwave signal is in phase-modulator, phase-shift keying (PSK) (PSK), phaselocked loop (PLL), antenna phase direction
The test of figure, the phase characteristic for measuring various microwave devices etc. etc., which have, to be extremely widely applied.Therefore in microwave frequency band
Grasp and control signal phase be it is necessary, the phase of microwave signal is also just at an important measurement parameter.This
Invention is to directly heat online known frequency based on a kind of clamped beam T junction for realizing online phase-detection of Si technological design
Rate microwave phase detector device.
Summary of the invention
Technical problem: the phase detectors in traditional microwave circuit not only have DC power, but also completely consume defeated
The detection signal entered；Fraction signal is coupled using six port clamped beam couplers carries out phase-detection, and major part detects
Signal can be input in next stage processing circuit, realize the 0-360 ° of phase on-line checking to given frequency signal, and have
The benefit of low-power consumption.
Technical solution: clamped beam T junction of the invention directly heats online given frequency microwave phase detector device by six
Port clamped beam coupler, the first direct-heating type microwave power detector and the second direct-heating type microwave power detector grade
Connection is constituted；
The first port of six port clamped beam couplers is to third port, the 4th port and first port to the 5th end
Mouth, the power degree of coupling difference of the 6th port are identical, and measured signal is inputted through the first port of six port clamped beam couplers, by
Third port and fifth port are respectively outputted to the first direct-heating type microwave power detector and second and directly heat type micro-wave
Power sensor is output to microwave phase detector device by the 4th port and the 6th port, is output to junior's processing by second port
Circuit；
Wherein, the structure of six port clamped beam couplers is symmetrical set with its center line, by co-planar waveguide, medium
Layer, air layer and clamped beam are constituted；Co-planar waveguide is produced on SiO2On layer, SiO2Layer makes on a si substrate, the anchoring area of clamped beam
It is produced on co-planar waveguide, the lower section metallization medium layer of clamped beam, and collectively form coupled capacitor knot with air layer, clamped beam
Structure, the co-planar waveguide length between two clamped beams are λ/4.
The utility model has the advantages that
1) clamped beam T junction of the invention directly heats online given frequency microwave phase detector device for microwave signal
Phase, frequency are surveyed module and are integrated together, and fraction signal is coupled using six port clamped beam couplers and carries out frequency detecting
And phase-detection, and most of signal can be input in next stage processing circuit, realize 0-360 ° to given frequency signal
Phase on-line checking.
2) clamped beam T junction of the invention directly heats online given frequency microwave phase detector device use and directly heats
Type micro-wave power sensor detects the power of microwave signal, sensitivity with higher and without DC power；
3) it is real using T junction to directly heat online given frequency microwave phase detector device to clamped beam T junction of the invention
Now to the power combing of microwave signal and distribution, the processing pair of isolation resistance in traditional Wilkinson power divider is avoided
The influence of microwave property；
4) the microwave phase detector module in the present invention uses two T junction power combiners, a T junction power distribution
Device and two direct-heating type microwave power detectors realize 0-360 ° of phase-detection.
Detailed description of the invention
Fig. 1 is that clamped beam T junction of the present invention directly heats online given frequency microwave phase detector device functional block diagram,
Fig. 2 is the top view of six port clamped beam couplers,
Fig. 3 is AA ' the directional profile figure of six port clamped beam coupler of Fig. 2,
Fig. 4 is the top view of T junction power divider/synthesizer,
Fig. 5 is the top view of direct-heating type microwave power detector,
Fig. 6 is AA ' the directional profile figure of Fig. 5 direct-heating type microwave power detector,
Fig. 7 is BB ' the directional profile figure of Fig. 5 direct-heating type microwave power detector.
It include: six port clamped beam couplers 1, microwave phase detector device 2, the first direct-heating type microwave power biography in figure
Sensor 3-1, the second direct-heating type microwave power detector 3-2, third direct-heating type microwave power detector 3-3, the 4th
Direct-heating type microwave power detector 3-4, the first T junction power combiner 4-1, the second T junction power combiner 4-2, T-type
Tie power divider 5, Si substrate 6, SiO2Layer 7, co-planar waveguide 8, anchoring area 9, dielectric layer 10, clamped beam 11, air layer 12, air
Bridge 13, capacitance top crown 14, output electrode 15, semiconductor arm 16, metal arm 17, hot end 18, cold end 19, under capacitance
Pole plate 20, substrate film structure 21, terminal resistance 22, first port 1-1, second port 1-2, third port 1-3, the 4th port
1-4, fifth port 1-5, the 6th port 1-6, the 7th port 4-1, the 8th port 4-2, the 9th port 4-3.
Specific embodiment
The online given frequency microwave phase detector device of clamped beam T junction indirect heating of the present invention is by six port clamped beam couplings
Clutch 1, microwave phase detector device 2, the first indirect heating type microwave power detector 3-1 and with the second indirect heating type micro-wave function
Rate sensor 3-2 cascade is constituted；
First port 1-1 to third port 1-3, the 4th port 1-4 and the first port of six port clamped beam couplers 1
1-1 to fifth port 1-5, the power degree of coupling difference of the 6th port 1-6 are identical, and measured signal is through six port clamped beam couplers
1 first port 1-1 input, is respectively outputted to the first indirect heating type microwave power by third port 1-3 and fifth port 1-5
Sensor 3-1 and the second indirect heating type microwave power detector 3-2, is output to micro- by the 4th port 1-4 and the 6th port 1-6
Wave phase detector 2 is output to junior's processing circuit by second port 1-2, realizes the phase-detection to given frequency signal,
And the signal after detecting can be used for other processing circuits.
Microwave phase detector device 2 is by third indirect heating type microwave power detector 3-3, the 4th indirect heating type micro-wave function
Rate sensor 3-4, the first T junction power combiner 4-1, the second T junction power combiner 4-2,5 structure of T junction power divider
At；First T junction power combiner 4-1, the topological structure of the second T junction power combiner 4-2 and T junction power divider 5
It is identical, be made of co-planar waveguide 8 and air bridges 13, signal from the 7th port 4-1 input be T junction power divider 5, signal from
8th port 4-2, the 9th port 4-3 input are the first T junction power combiner 4-1 or the second T junction power combiner 4-2；
The testing principle of its indirect heated microwave power sensor and microwave phase can be explained as follows:
Direct-heating type microwave power detector: microwave power as shown in Figure 5 is inputted from input port, passes through co-planar waveguide
8, which are input to the consumption of terminal resistance 22, is converted to heat；Semiconductor arm 16 and metal arm 17 constitute thermocouple, the middle area of thermocouple
Domain is as hot end 18, and the fringe region of thermocouple is as cold end 19；According to Seebeck effect, pass through measurement output electrode 15
Microwave power size is inputted known to thermoelectrical potential；Capacitance top crown 14, capacitance bottom crown 20 and dielectric layer 10 constitute every
Straight capacitor prevents the output electrode 15 short-circuit；18 back of hot end of thermocouple by substrate thinning constitute substrate film structure 21 to
Improve detection sensitivity.
Phase detectors: third port 1-3 and fiveth of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1
Port 1-5 is separately input to the first direct-heating type microwave power detector 3-1 and the second direct-heating type microwave power sensing
Device 3-2 carries out coupled power detection, fourth port 1-4 and sixth port 1-6 of the microwave signal through six port clamped beam couplers 1
It is input to microwave phase detector device 2 and carries out phase-detection；It is coplanar between two clamped beams 11 of six port clamped beam couplers 1
8 length of waveguide is λ/4, is at this time 90 ° by the two way microwave signals phase difference of the 4th port 1-4 and the 6th port 1-6；Input
Power is known as Pr, the reference signal of f (known to frequency) identical as measured signal frequency, reference signal is through T junction power distribution
Device 5 is divided into two-way power and the identical signal of phase and the two-way measured signal of the 4th port 1-4 and the 6th port 1-6 passes through respectively
First T junction power combiner 4-1 and the second T junction power combiner 4-2 carries out power combing；Third directly heats type micro-wave
Power sensor 3-3 and the 4th direct-heating type microwave power detector 3-4 is to the power P after the synthesis of left and right two-waycs1, Pcs2Into
Row detection, and the phase difference between measured signal and reference signal is obtained by formula (3)
P4, P6For the power that the 4th port 1-4 is coupled with the 6th port 1-6, and P4=P3, P4=P3。
The preparation method that clamped beam T junction directly heats online given frequency microwave phase detector device includes following
Step:
1) prepare 4 inches of high resistant Si substrates 6, resistivity is 4000 Ω cm, with a thickness of 400mm；
2) thermally grown a layer thickness is the SiO of 1.2mm2Layer 7；
3) chemical vapor deposition (CVD) grows one layer of polysilicon, with a thickness of 0.4mm；
4) one layer photoresist of coating and photoetching, in addition to polysilicon resistance region, other regions are photo-etched glue protection, and infuse
Enter phosphorus (P) ion, doping concentration 1015cm-2, form terminal resistance 22；
5) one layer photoresist of coating, one layer photoresist of photoetching polysilicon resistance graphic application, photoetching polysilicon resistance figure,
Terminal resistance 22 and semiconductor arm 16 are formed by dry etching again；
6) layer photoresist is coated, photoetching removes the photoetching at co-planar waveguide 8, metal interconnecting wires and output electrode 15
Glue；
7) electron beam evaporation (EBE) forms first layer gold (Au), with a thickness of 0.3mm, removes on photoresist and photoresist
Au, removing forms first layer Au, the thermoelectric pile metal interconnecting wires of co-planar waveguide, capacitance bottom crown 20 and output electrode
15；
8) (LPCVD) one layer of Si is deposited3N4, with a thickness of 0.1mm；
9) layer photoresist is coated, photoetching simultaneously retains capacitance, the photoresist of 11 lower section of clamped beam, dry etching
Si3N4, form dielectric layer 10；
10) one layer of air layer 12 and litho pattern are uniformly coated, with a thickness of 2mm, the polyamides for retaining 11 lower section of clamped beam is sub-
Amine is as sacrificial layer；
11) photoresist is coated, photoetching removes clamped beam 12, anchoring area 9, co-planar waveguide 8, capacitance top crown 14 and defeated
The photoresist of 15 position of electrode out；
12) seed layer for evaporating 500/1500/300A ° of Ti/Au/Ti, removes one thickness of re-plating after the Ti layer at top
Degree is the Au layer of 2mm；
13) remove the Au on photoresist and photoresist, formed clamped beam 12, anchoring area 9, co-planar waveguide 8, on capacitance
Pole plate 14 and output electrode 15；
14) deep reaction ion etching (DRIE) the substrate material back side makes membrane structure 21；
15) discharge polyimide sacrificial layer: developer solution impregnates, and removes the polyimide sacrificial layer under clamped beam, deionization
Water impregnates slightly, dehydrated alcohol dehydration, volatilizees, dries under room temperature.
Difference with the prior art of the present invention is:
Present invention employs novel six ports clamped beam coupled structures, wherein the first end of six port clamped beam couplers
Mouthful 1-1 is to third port 1-3 and the 4th port 1-4 and first port 1-1 to the power of fifth port 1-5, the 6th port 1-6
The degree of coupling is identical；This clamped beam coupled structure is coupled out the signal of fraction from the microwave signal of coplanar wave guide transmission to examine
The phase size of microwave signal is surveyed, and most of signal can be input in next stage processing circuit；It is realized using T junction to micro-
The power combing of wave signal and distribution avoid the processing of isolation resistance in traditional Wilkinson power divider to microwave
The influence of energy；Detect the microwave power of signal using direct-heating type microwave power detector, sensitivity with higher and
Without DC power；Clamped beam T junction of the invention directly heats online given frequency microwave phase detector device, realizes to
Know 0-360 ° of phase on-line checking of frequency signal.
The structure for meeting conditions above is considered as clamped beam T junction of the invention and directly heats online given frequency microwave
Phase detectors.
Claims (2)
1. a kind of clamped beam T junction directly heats online given frequency microwave phase detector device, coupled by six port clamped beams
Device (1), microwave phase detector module (2), the first direct-type microwave power detector (3-1) and the second direct-type microwave power pass
Sensor (3-2) cascade is constituted；Wherein, the first port (1-1) of six port clamped beam couplers (1) is to third port (1-3), the
The power degree of coupling of four ports (1-4) and first port (1-1) to fifth port (1-5), the 6th port (1-6) distinguishes phase
Together, measured signal is inputted through the first port (1-1) of six port clamped beam couplers, by third port (1-3) and fifth port
(1-5) is respectively outputted to the first direct-type microwave power detector (3-1) and the second direct-type microwave power detector (3-2),
Microwave phase detector module (2) are output to by the 4th port (1-4) and the 6th port (1-6), are output to by second port (1-2)
Junior's processing circuit, reference signal are divided into two-way power and the identical signal of phase through T junction power divider (5), respectively with
The two-way measured signal of 4th port (1-4) and the 6th port (1-6) is through the first T junction power combiner (4-1) and the second T-type
It ties power combiner (4-2) and carries out power combing；Third direct-type microwave power detector (3-3) and the 4th direct type micro-wave function
Rate sensor (3-4) left and right two-way is synthesized after power P cs1, Pcs2 detected；
Wherein, the structure of six port clamped beam couplers (1) is symmetrical set with its center line, by co-planar waveguide (8), medium
Layer (10), air layer (12) and clamped beam (11) are constituted；Co-planar waveguide (8) is produced on SiO2 layers (7), SiO2 layers (7) production
On Si substrate (6), the anchoring area (9) of clamped beam (11) is produced on co-planar waveguide (8), the lower section deposition medium of clamped beam (11)
Layer (10), and coupled capacitor structure is collectively formed with air layer (12), clamped beam (11), it is coplanar between two clamped beams (11)
Waveguide (8) length is λ/4.
2. clamped beam T junction as described in claim 1 directly heats online given frequency microwave phase detector device, feature
It is to directly heat type micro-wave function sensor (3) by Si substrate (6), SiO2 layers (7), co-planar waveguide (8), semiconductor arm (16),
Metal arm (17), terminal resistance (22) are constituted；Microwave power is inputted from input port, is input to terminal by co-planar waveguide (8)
Resistance (22) is converted to heat；Semiconductor arm (16) and metal arm (17) constitute thermocouple and are passed through according to Seebeck effect
It measures and inputs microwave power size known to the thermoelectrical potential of output electrode (15).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710052690.9A CN106841794B (en) | 2017-01-24 | 2017-01-24 | Clamped beam T junction directly heats online given frequency microwave phase detector device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710052690.9A CN106841794B (en) | 2017-01-24 | 2017-01-24 | Clamped beam T junction directly heats online given frequency microwave phase detector device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106841794A CN106841794A (en) | 2017-06-13 |
| CN106841794B true CN106841794B (en) | 2019-04-09 |
Family
ID=59121077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710052690.9A Active CN106841794B (en) | 2017-01-24 | 2017-01-24 | Clamped beam T junction directly heats online given frequency microwave phase detector device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106841794B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| WO2007101916A1 (en) * | 2006-03-09 | 2007-09-13 | Valtion Teknillinen Tutkimuskeskus | Device and method for measuring electrical power |
| JP4436065B2 (en) * | 2003-04-23 | 2010-03-24 | 三菱重工業株式会社 | Phase measuring device and space solar power generation system |
| CN101788605B (en) * | 2010-02-01 | 2012-04-11 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103018559B (en) * | 2012-12-26 | 2015-04-15 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103344831B (en) * | 2013-06-19 | 2015-04-29 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
-
2017
- 2017-01-24 CN CN201710052690.9A patent/CN106841794B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4436065B2 (en) * | 2003-04-23 | 2010-03-24 | 三菱重工業株式会社 | Phase measuring device and space solar power generation system |
| WO2007101916A1 (en) * | 2006-03-09 | 2007-09-13 | Valtion Teknillinen Tutkimuskeskus | Device and method for measuring electrical power |
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| CN101788605B (en) * | 2010-02-01 | 2012-04-11 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103018559B (en) * | 2012-12-26 | 2015-04-15 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103344831B (en) * | 2013-06-19 | 2015-04-29 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
Non-Patent Citations (2)
| Title |
|---|
| Fabrication of the Different Microwave Power Sensor by Seesaw-Type MEMS Membrane;Zhenxiang Yi 等;《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》;20160831;第25卷(第4期);全文 |
| 基于MEMS技术的差分式微波信号相位检测器;焦永昌 等;《东南大学学报》;20090131;第39卷(第1期);全文 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106841794A (en) | 2017-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106841794B (en) | Clamped beam T junction directly heats online given frequency microwave phase detector device | |
| CN108279405A (en) | Adaption radar ratio method cantilever beam micro-nano microwave detects and demodulation monolithic system | |
| CN106841785B (en) | Clamped beam directly heats online given frequency microwave phase detector device | |
| CN106645920B (en) | Clamped beam T junction indirect heating type microwave signal detector | |
| CN106841793B (en) | The online given frequency microwave phase detector device of clamped beam indirect heating | |
| CN106841787B (en) | Clamped beam T junction directly heats online unknown frequency microwave phase detector device | |
| CN106841788B (en) | The online given frequency microwave phase detector device of clamped beam T junction indirect heating | |
| CN106841789B (en) | Clamped beam directly heats online unknown frequency microwave phase detector device | |
| CN106841781B (en) | Online millimeter wave phase detectors are directly heated based on silicon substrate cantilever beam T junction | |
| CN106841771B (en) | Clamped beam T junction direct-heating type microwave signal detector | |
| CN106814259B (en) | Clamped beam direct-heating type microwave signal detector | |
| CN108508410A (en) | The direct micro-nano microwave of ratio method slot-coupled detects demodulating system in adaption radar | |
| CN106872780B (en) | The online unknown frequency microwave phase detector device of clamped beam T junction indirect heating | |
| CN106841796B (en) | The online unknown frequency microwave phase detector device of clamped beam indirect heating | |
| CN106814251B (en) | The coupling of silicon-base micro-mechanical cantilever beam directly heats online millimeter wave phase detectors | |
| CN108594176A (en) | The direct micro-nano microwave of ratio method cantilever beam detects demodulating system in adaption radar | |
| CN106771558B (en) | Clamped beam direct-heating type microwave signal detector device | |
| CN106711164B (en) | Clamped beam indirect heating type microwave signal detector | |
| CN106872797B (en) | Clamped beam T junction indirect heating type microwave signal detector device | |
| CN106841802B (en) | Based on the online millimeter wave phase detectors of silicon substrate cantilever beam T junction indirect heating | |
| CN106872767B (en) | Clamped beam indirect heating type microwave signal detector device | |
| CN106841790B (en) | Clamped beam T junction direct-heating type microwave signal detector device | |
| CN107064617B (en) | Silicon substrate cantilever beam couples indirect heating type unknown frequency millimeter wave phase detectors | |
| CN106771601B (en) | Silicon substrate cantilever beam T junction direct-heating type unknown frequency millimeter wave phase detectors | |
| CN106841784B (en) | Silicon-base micro-mechanical cantilever beam couples the online millimeter wave phase detectors of indirect heating |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |