CN106771558B - Clamped beam direct-heating type microwave signal detector device - Google Patents
Clamped beam direct-heating type microwave signal detector device Download PDFInfo
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- CN106771558B CN106771558B CN201710052713.6A CN201710052713A CN106771558B CN 106771558 B CN106771558 B CN 106771558B CN 201710052713 A CN201710052713 A CN 201710052713A CN 106771558 B CN106771558 B CN 106771558B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
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Abstract
Clamped beam direct-heating type microwave signal detector device of the invention is made of sensor, analog-to-digital conversion, MCS51 single-chip microcontroller and liquid crystal display four module, sensor is by six port clamped beam couplers, channel selection switch, microwave frequency detector, microwave phase detector device, the cascade of direct-heating type microwave power detector are constituted；The first port of six port clamped beam couplers is identical to third port, the 4th port and to first port to fifth port, the power degree of coupling of the 6th port difference, signal is inputted through first port, and direct-heating type microwave power detector is exported by second port, by the 4th port, 6th port exports microwave phase detector device, by third port, fifth port is output to channel selection switch；7th port of channel selection switch and the 8th port connect direct-heating type microwave power detector, and the 9th port of channel selection switch, the tenth port connects microwave frequency detector；It realizes the power to microwave signal, phase, frequency while detecting.
Description
Technical field
The invention proposes clamped beam direct-heating type microwave signal detector devices, belong to the technology of microelectromechanical systems
Field.
Background technique
Under up to date technics background, microwave signal detection is fixed in phase-shift keying (PSK) (PSK), phaselocked loop (PLL), microwave
Phase characteristic of position, the test of antenna phase pattern and the various microwave devices of measurement etc. etc., which has, extremely widely answers
With.These systems electronic equipment high there is an urgent need to light-weight, small in size, low in energy consumption, integrated level in practical applications.And it is existing
Microwave power, phase, frequency detector is all discrete circuit and volume is larger, being badly in need of one kind thus can be to three kinds of microwave parameter
The system of integrated detection is realized to meet the application demand in microwave communication field.The present invention is based on a kind of list of Si technological design
A chip realizes the clamped beam direct-heating type microwave signal detector device of detection microwave power, phase, frequency simultaneously.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of clamped beam direct-heating type microwave signal detector device, applications
Six port clamped beam Coupler ports are come the detection function module that is of coupled connections different, and by analog-to-digital conversion by parameter to be measured
It is directly displayed on LCD screen, to realize a chip simultaneously to three kinds of power of microwave signal, phase, frequency microwaves
The detection of parameter, the benefit with low-power consumption, low cost.
Technical solution: clamped beam direct-heating type microwave signal detector device of the invention be by sensor, analog-to-digital conversion,
MCS51 single-chip microcontroller and liquid crystal display four big module composition, this four big module is again by the little module and circuit structure on some bases
At.
Wherein Sensor section is by six port clamped beam couplers, channel selection switch, microwave frequency detector, microwave phase
Bit detector, direct-heating type microwave power detector composition；Clamped beam direct-heating type microwave signal detector device, feature
It is the phase detectors by six port clamped beam couplers, channel selection switch, microwave frequency detector, microwave phase detector
Device, the cascade of the first direct-heating type microwave power detector are constituted；Wherein, the first port of six port clamped beam couplers is to
The power degree of coupling of three ports, the 4th port and first port to fifth port, the 6th port is identical, and measured signal is through first
Port input, and the first direct-heating type microwave power detector is output to by second port, by the 4th port and the 6th port
It is output to microwave phase detector device, channel selection switch is output to by third port and fifth port；The of channel selection switch
Seven ports and the 8th port connect the second direct-heating type microwave power detector respectively and third direct-heating type microwave power passes
Sensor；9th port of channel selection switch and the tenth port connect microwave frequency detector, to realize to microwave signal function
The detection of rate, phase, frequency.
Wherein, six port clamped beam couplers are by co-planar waveguide, dielectric layer, air layer and across clamped beam structure above it
At；Co-planar waveguide is produced on SiO2On layer, the anchoring area of clamped beam is produced on co-planar waveguide, and medium is deposited with below clamped beam
Layer, and coupled capacitor structure is collectively formed with air layer, clamped beam, the co-planar waveguide length between two clamped beams is λ/4；
Second big module is analog-to-digital conversion part, its main function is the function that will be exported in three little modules of sensor
Rate is directly changed into digital signal, this part is mainly by STM32 microprocessor and the peripheral circuit being made of AD620 chip
It is constituted.
Followed by MCS51 single chip part, its main function are exactly that each voltage value progress formula is calculated to need
The numerical value of frequency, phase and the power wanted.
Finally be exactly liquid-crystal display section, its main function be exactly the digital signal that will be obtained directly carry out showing it is defeated
Out, the frequency of measured signal, the reading of phase and power are obtained.
The utility model has the advantages that
4) clamped beam direct-heating type microwave signal detector device of the invention is by the power of microwave signal, phase, frequency
Three kinds of survey modules are integrated together, and the clamped beam using six port clamped beam couplers carrys out coupling input signal to different detections
Functional module, realize a chip simultaneously to the power of microwave signal, phase, three kinds of microwave parameters of frequency detection, have
Low-power consumption, inexpensive benefit；
5) clamped beam direct-heating type microwave signal detector device of the invention is sensed using direct-heating type microwave power
Device detects the power of microwave signal, sensitivity with higher and without DC power；
6) the microwave phase detector module in the present invention uses two Wilkinson power combiners, a Wilkinson
Power divider and two direct-heating type microwave power detectors realize 0-360 ° of phase-detection.
Detailed description of the invention
Fig. 1 is the structural block diagram of clamped beam direct-heating type microwave signal detector device of the present invention,
Fig. 2 is the functional block diagram of clamped beam direct-heating type microwave signal detector device of the present invention,
Fig. 3 is the top view of six port clamped beam couplers,
Fig. 4 is AA ' the directional profile figure of six port clamped beam coupler of Fig. 3,
Fig. 5 is the top view of channel selection switch,
Fig. 6 is AA ' the directional profile figure of Fig. 5 channel selection switch,
Fig. 7 is the top view of Wilkinson power divider/synthesizer,
Fig. 8 is the top view of direct-heating type microwave power detector,
Fig. 9 is AA ' the directional profile figure of Fig. 8 direct-heating type microwave power detector,
Figure 10 is BB ' the directional profile figure of Fig. 8 direct-heating type microwave power detector,
Figure 11 is the circuit diagram of Fig. 1 analog-to-digital conversion module.
It include: six port clamped beam couplers 1, channel selection switch 2, microwave frequency detector 3, microwave phase inspection in figure
Device 4 is surveyed, direct-heating type microwave power detector 5, the first direct-heating type microwave power detector 5-1, second directly heats
Type micro-wave power sensor 5-2, third direct-heating type microwave power detector 5-3, the 4th direct-heating type microwave power pass
Sensor 5-4, the 5th direct-heating type microwave power detector 5-5, the 6th direct-heating type microwave power detector 5-6, first
Wilkinson power combiner 6-1, the 2nd Wilkinson power combiner 6-2, the 3rd Wilkinson power combiner 6-3,
Wilkinson power divider 7, Si substrate 8, SiO2Layer 9, co-planar waveguide 10, anchoring area 11, dielectric layer 12, clamped beam 13, cantilever
Beam 14, air layer 15, air bridges 16, asymmetrical coplanar stripline 17, isolation resistance 18, capacitance top crown 19, output electrode
20, semiconductor arm 21, metal arm 22, hot end 23, cold end 24, capacitance bottom crown 25, substrate film structure 26, terminal resistance
27, pull-down electrode 28, first port 1-1, second port 1-2, third port 1-3, the 4th port 1-4, fifth port 1-5, the
Six port 1-6, the 7th port 2-1, the 8th port 2-2, the 9th port 2-3, the tenth port 2-4, the tenth Single port 6-1, the tenth
Two-port netwerk 6-2, the 13rd port 6-3.
Specific embodiment
Sensor section is coupled by six port clamped beams in clamped beam direct-heating type microwave signal detector device of the present invention
Device 1, channel selection switch 2, microwave frequency detector 3, microwave phase detector device 4, the first direct-heating type microwave power sensing
Device 5-1 cascade is constituted；Six port clamped beam couplers 1 are by co-planar waveguide 10, dielectric layer 12, air layer 15 and across above it
Clamped beam 13 is constituted；Co-planar waveguide 10 is produced on SiO2On layer 9, the anchoring area 11 of clamped beam 13 is produced on co-planar waveguide 10, Gu
The lower section of strutbeam 13 is deposited with dielectric layer 12, and collectively forms coupled capacitor structure with air layer 15, clamped beam 13, and two clamped
10 length of co-planar waveguide between beam 13 is λ/4；Channel selection switch 2 is by co-planar waveguide 10, anchoring area 11, dielectric layer 12, cantilever
Beam 14, pull-down electrode 28 are constituted；The anchoring area 11 of cantilever beam 14 is produced on co-planar waveguide 10, and pull-down electrode is made below cantilever beam
28, and construction of switch is collectively formed with 28 upper dielectric layer 12 of pull-down electrode；Microwave frequency detector 3 is by the 3rd Wilkinson
Power combiner 6-3 and the 6th direct-heating type microwave power detector 5-6 cascade is constituted；Microwave phase detector device 4 is by the 4th
Direct-heating type microwave power detector 5-4 and the 5th direct-heating type microwave power detector 5-5, the first Wilkinson function
Rate synthesizer 6-1, the 2nd Wilkinson power combiner 6-2, Wilkinson power divider 7 are constituted；Wilkinson power
The topological structure of synthesizer, Wilkinson power divider is identical, by co-planar waveguide 10, air bridges 16, asymmetric coplanar strip 17
It is constituted with isolation resistance 18, signal is Wilkinson power divider 7 from the tenth Single port 6-1 input, and signal is from the 12nd end
Mouth 6-2, the 13rd port 6-3 input is Wilkinson power combiner
The first port of six port clamped beam couplers 1 is to third port, the 4th port and first port to the 5th end
Mouth, the power degree of coupling difference of the 6th port are identical；Measured signal is inputted through the first port of six port clamped beam couplers 1,
And third direct-heating type microwave power detector 5-3 is output to by second port, it is output to by the 4th port and the 6th port
Microwave phase detector device 4 is output to channel selection switch 2 by third port and fifth port；7th end of channel selection switch 2
Mouth 2-1 and the 8th port 2-2 meets the second direct-heating type microwave power detector 5-2 and third direct-heating type microwave power passes
Sensor 5-3, the 9th port of channel selection switch 2 and the tenth port connect microwave frequency detector 3；It declines in each directly heat
It is all connected to analog-to-digital conversion module after wave power sensor, then all accesses the digital signal that these analog-to-digital conversions obtain
MCS51 single-chip microcontroller carries out formula calculating, and the numerical values recited of output frequency, phase and power is shown finally by liquid crystal display,
Realize a chip simultaneously to the power of microwave signal, phase, three kinds of microwave parameters of frequency detection, there is low-power consumption, low
The benefit of cost.Its microwave power, phase, frequency testing principle can be explained as follows:
Power detection: microwave power as shown in Figure 5 is inputted from input port, is input to terminal resistance by co-planar waveguide 10
27 consumption are converted to heat；Semiconductor arm 21 and metal arm 22 constitute thermocouple, and the intermediate region of thermocouple is as hot end 23, heat
The fringe region of galvanic couple is as cold end 24；It is micro- by measuring input known to the thermoelectrical potential of output electrode 20 according to Seebeck effect
Wave power size；Capacitance top crown 19, capacitance bottom crown 25 and dielectric layer 11 constitute capacitance to prevent from exporting
20 short circuit of electrode；Substrate thinning is constituted substrate film structure 26 to improve detection sensitivity by 21 back of hot end of thermocouple；
Watt level P can be expressed by following formula:
Frequency detecting: third port 1-3 and fiveth end of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1
Mouth 1-5 is output to channel selection switch 2；It is straight that 7th port 2-1 of channel selection switch 2 and the 8th port 2-2 connects second respectively
Meet heated microwave power sensor 5-2 and third direct-heating type microwave power detector 5-3, the of channel selection switch 2
Nine port 2-3 and the tenth port 2-4 connect microwave frequency detector 3；The cantilever beam 14 of channel selection switch 2 is grounded, pull-down electrode
28 connect driving voltage, and when driving voltage is more than or equal to cut-in voltage, cantilever beam 14 is pulled down into, and channel is strobed；When channel is selected
When the 7th port 2-1 and the 8th port 2-2 for selecting switch 2 are strobed, the output of six port clamped beam couplers 1 can be tested out
Coupled power P3And P5.10 length of co-planar waveguide between two clamped beams 13 of six port clamped beam couplers 1 is λ/4, at this time
The phase difference of third port 1-3 and fifth port 1-5 are 90 °, and the phase difference as shown in formula (1) is the linear function of frequency.
λ is the wavelength for inputting microwave signal, and c is the light velocity, εerIt is only related with device architecture for effective dielectric constant.Work as channel
When the 9th port 2-3 and the tenth port 2-4 of selection switch 2 are strobed, two way microwave signals pass through the 3rd Wilkinson power
Synthesizer 6-3 carries out power combing, and the 6th direct-heating type microwave power detector 5-6 of application detects composite signal power Ps
Size can obtain the frequency of input microwave signal according to formula (2).
P3, P5It, can be by direct-heating type microwave power detector for the power that third port 1-3 is coupled with fifth port 1-5
5 detections obtain.
Phase detectors: fourth port 1-4 and sixth of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1
Port 1-6 is input to microwave phase detector device 4 and carries out phase-detection；Two clamped beams 13 of six port clamped beam couplers 1 it
Between 10 length of co-planar waveguide be λ/4, at this time by the two way microwave signals phase difference of the 4th port 1-4 and the 6th port 1-6
It is 90 °；Input power is known as Pr, the reference signal of f (microwave frequency detector 3 measures) identical as measured signal frequency, ginseng
It examines signal and is divided into two-way power and the identical signal of phase and the 4th port 1-4 and the 6th end through Wilkinson power divider 7
The two-way measured signal of mouthful 1-6 through the first Wilkinson power combiner 6-1 and the 2nd Wilkinson power combiner 6-2 into
Row power combing；4th direct-heating type microwave power detector 5-4 and the 5th 5-5 pairs of direct-heating type microwave power detector
Power P after the synthesis of left and right two-waycs1, Pcs2It is detected, and is obtained between measured signal and reference signal by formula (4)
Phase difference
P4, P6For the power that the 4th port 1-4 is coupled with the 6th port 1-6, and P4=P3, P6=P5。
Second big module is analog-to-digital conversion part, its main function is the function that will be exported in three little modules of sensor
Rate is directly changed into digital signal, this part is mainly by STM32 microprocessor and the peripheral circuit being made of AD620 chip
It is constituted, then according to formula (1), (2), (3), (4), counter can release the size of corresponding frequency f, phase Φ and power P:
The preparation method of sensor module includes following step in clamped beam direct-heating type microwave signal detector device
It is rapid:
1) prepare 4 inches of high resistant Si substrates 8, resistivity is 4000 Ω cm, with a thickness of 400mm；
2) thermally grown a layer thickness is the SiO2 layer 9 of 1.2mm；
3) chemical vapor deposition (CVD) grows one layer of polysilicon, with a thickness of 0.4mm；
4) coating photoresist and photoetching, in addition to polysilicon resistance region, other regions are photo-etched glue protection, and inject phosphorus
(P) ion, doping concentration 1015cm-2 form isolation resistance 18 and terminal resistance 27；
5) one layer photoresist of coating, one layer photoresist of photoetching polysilicon resistance graphic application, photoetching polysilicon resistance figure,
Isolation resistance 18, terminal resistance 27 and semiconductor arm 21 are formed by dry etching again；
6) layer photoresist is coated, photoetching removes co-planar waveguide 10, asymmetric coplanar strip 17, metal interconnecting wires, drop-down electricity
Photoresist at pole 28 and output electrode 20；
7) electron beam evaporation (EBE) forms first layer gold (Au), with a thickness of 0.3mm, removes on photoresist and photoresist
Au, removing forms first layer Au, the thermoelectric pile metal interconnecting wires of co-planar waveguide 10 and asymmetric coplanar strip 17, under capacitance
Pole plate 25, pull-down electrode 28 and output electrode 20；
8) (LPCVD) one layer of Si3N4 is deposited, with a thickness of 0.1mm；
9) layer photoresist is coated, photoetching simultaneously retains capacitance, and the photoresist of 14 lower section of clamped beam 13 and cantilever beam is done
Method etches Si3N4, forms dielectric layer 12；
10) uniformly one layer of air layer 15 of coating and litho pattern retain under clamped beam 13 and cantilever beam 14 with a thickness of 2mm
The polyimides of side is as sacrificial layer；
11) coat photoresist, photoetching remove cantilever beam 14, clamped beam 13, anchoring area 11, co-planar waveguide 10, on capacitance
The photoresist of 20 position of pole plate 19, pull-down electrode 28 and output electrode；
12) seed layer for evaporating 500/1500/300A ° of Ti/Au/Ti, removes one thickness of re-plating after the Ti layer at top
Degree is the Au layer of 2mm；
13) remove photoresist and on Au, form cantilever beam 14, clamped beam 13, anchoring area 11, co-planar waveguide 10, non-right
Claim coplanar strip 17, capacitance top crown 19, pull-down electrode 28 and output electrode 20；
14) deep reaction ion etching (DRIE) the substrate material back side makes membrane structure 26；
15) discharge polyimide sacrificial layer: developer solution impregnates, and removes the polyimide sacrificial layer under clamped beam, deionization
Water impregnates slightly, dehydrated alcohol dehydration, volatilizees, dries under room temperature.
Difference with the prior art of the present invention is:
Present invention employs novel six ports clamped beam coupled structures, and this clamped beam coupled structure is from co-planar waveguide
It is coupled out a part in the microwave signal of transmission, and detects power, frequency and the phase of microwave signal using the signal being coupled out
Position size；Power combing and the distribution to microwave signal are realized using Wilkinson power combiner and power divider；Using
Direct-heating type microwave power detector detects the microwave power of signal, sensitivity with higher and without DC power；This
The clamped beam direct-heating type microwave signal detector device of invention realizes a chip while the power to microwave signal, phase
Position, the detection of three kinds of microwave parameters of frequency, the benefit with low-power consumption, low cost.The structure for meeting conditions above is considered as this
The clamped beam direct-heating type microwave signal detector device of invention.
Claims (3)
1. a kind of clamped beam direct-heating type microwave signal detector device, it is characterised in that the sensing of the microwave signal detector device
Device part is by six port clamped beam couplers (1), channel selection switch (2), microwave frequency detector (3), microwave phase detector
Device (4), the second direct-heating type microwave power detector (5-2) and third direct-heating type microwave power detector (5-3) grade
Connection is constituted；Wherein, the first port (1-1) of six port clamped beam couplers (1) arrives third port (1-3), the 4th port (1-4)
And first port (1-1) is identical to fifth port (1-5), the power degree of coupling of the 6th port (1-6), measured signal is through first
Port (1-1) input, and the first direct-heating type microwave power detector (5-1) is output to by second port (1-2), by the 4th
Port (1-4) and the 6th port (1-6) are output to microwave phase detector device (4), by third port (1-3) and fifth port (1-
5) channel selection switch (2) are output to, reference signal is divided into two-way power and phase phase through Wilkinson power divider (7)
The two-way measured signal of same signal and the 4th port (1-4) and the 6th port (1-6) is through the first Wilkinson power combiner
(6-1) and the 2nd Wilkinson power combiner (6-2) carry out power combing, the 4th direct-heating type microwave power detector
Power after (5-4) and the 5th direct-heating type microwave power detector (5-5) synthesize left and right two-way detects；Channel choosing
The 7th port (2-1) and the 8th port (2-2) for selecting switch (2) meet the second direct-heating type microwave power detector (5- respectively
And third direct-heating type microwave power detector (5-3) 2)；9th port (2-3) of channel selection switch (2) and the tenth end
Mouth (2-4) connects the 3rd Wilkinson power combiner (6-3) of microwave frequency detector (3), and the 3rd Wilkinson power
Synthesizer (6-3) connects the 6th direct-heating type microwave power detector (5-6), each direct-type thermoelectric (al) type power sensor it
It is all connected to analog-to-digital conversion module afterwards, the digital signal for then obtaining these analog-to-digital conversions all accesses the progress of MCS51 single-chip microcontroller
Formula calculates, and the numerical values recited of output frequency, phase and power is shown finally by liquid crystal display, to realize to microwave
The detection of signal power, phase, frequency；
Wherein, six port clamped beam couplers (1) are by co-planar waveguide (10), dielectric layer (12), air layer (15) and across at it
Top clamped beam (13) is constituted；Co-planar waveguide (10) is produced on SiO2On layer (9), the anchoring area (11) of clamped beam (13) is produced on altogether
Surface wave is led on (10), is deposited with below clamped beam (13) dielectric layer (12), and with air layer (15), clamped beam (13) common structure
At coupled capacitor structure, co-planar waveguide (10) length between two clamped beams (13) is λ/4.
2. clamped beam direct-heating type microwave signal detector device as described in claim 1, it is characterised in that channel selecting
(2) are switched by co-planar waveguide (10), anchoring area (11), dielectric layer (12), cantilever beam (14), pull-down electrode (28) composition；Cantilever beam
(14) anchoring area (11) is produced on co-planar waveguide (10), and the lower section of cantilever beam (14) makes pull-down electrode (28), and with drop-down
Electrode (28) upper dielectric layer (12) collectively forms construction of switch；The cantilever beam (14) of channel selection switch (2) is grounded, drop-down electricity
Pole (28) connects driving voltage；When driving voltage is more than or equal to cut-in voltage, cantilever beam (14) is pulled down into, and channel is strobed.
3. clamped beam direct-heating type microwave signal detector device as described in claim 1, it is characterised in that directly heat
Type micro-wave power sensor (5) is by Si substrate (8), SiO2Layer (9), co-planar waveguide (10), semiconductor arm (21), metal arm
(22), terminal resistance (27) is constituted；Microwave power is inputted from input port, is input to terminal resistance by co-planar waveguide (10)
(27) it is converted to heat；Semiconductor arm (21) and metal arm (22) constitute thermocouple and pass through measurement according to Seebeck effect
Microwave power size is inputted known to the thermoelectrical potential of output electrode (20).
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Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004325162A (en) * | 2003-04-23 | 2004-11-18 | Mitsubishi Heavy Ind Ltd | Phase measuring apparatus and cosmic solar generation system |
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| WO2007101916A1 (en) * | 2006-03-09 | 2007-09-13 | Valtion Teknillinen Tutkimuskeskus | Device and method for measuring electrical power |
| CN101332971A (en) * | 2008-07-29 | 2008-12-31 | 东南大学 | Passing type microwave power detector based on microelectronic mechanical cantilever beam and manufacturing method |
| CN101788605B (en) * | 2010-02-01 | 2012-04-11 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103018559B (en) * | 2012-12-26 | 2015-04-15 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103344831B (en) * | 2013-06-19 | 2015-04-29 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
-
2017
- 2017-01-24 CN CN201710052713.6A patent/CN106771558B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004325162A (en) * | 2003-04-23 | 2004-11-18 | Mitsubishi Heavy Ind Ltd | Phase measuring apparatus and cosmic solar generation system |
| WO2007101916A1 (en) * | 2006-03-09 | 2007-09-13 | Valtion Teknillinen Tutkimuskeskus | Device and method for measuring electrical power |
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| CN101332971A (en) * | 2008-07-29 | 2008-12-31 | 东南大学 | Passing type microwave power detector based on microelectronic mechanical cantilever beam and manufacturing method |
| CN101788605B (en) * | 2010-02-01 | 2012-04-11 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103018559B (en) * | 2012-12-26 | 2015-04-15 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103344831B (en) * | 2013-06-19 | 2015-04-29 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
Non-Patent Citations (2)
| Title |
|---|
| AN X-Band Dual Channel Microwave Phase Detector Based on GaAs MMIC Technology;Han Yan 等;《IEEE SENSORS JOURNAL》;20160901;第16卷(第17期);全文 |
| 基于MEMS技术的差分式微波信号相位检测器;焦永昌 等;《东南大学学报》;20090131;第39卷(第1期);全文 |
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