CN106872797B - Clamped beam T junction indirect heating type microwave signal detector device - Google Patents
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- CN106872797B CN106872797B CN201710052700.9A CN201710052700A CN106872797B CN 106872797 B CN106872797 B CN 106872797B CN 201710052700 A CN201710052700 A CN 201710052700A CN 106872797 B CN106872797 B CN 106872797B
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
- G01R29/0892—Details related to signal analysis or treatment; presenting results, e.g. displays; measuring specific signal features other than field strength, e.g. polarisation, field modes, phase, envelope, maximum value
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Abstract
Clamped beam T junction indirect heating type microwave signal detector device of the invention is made of sensor, analog-to-digital conversion, MCS51 single-chip microcontroller and liquid crystal display four module, sensor is by six port clamped beam couplers, channel selection switch, microwave frequency detector, the cascade of microwave phase detector device are constituted；The power degree of coupling of first port to the third port, the 4th port and first port to fifth port, the 6th port of six port clamped beam couplers is identical, measured signal is inputted through first port, first indirect heating type microwave power detector is output to by second port, microwave phase detector device is output to by the 4th port and the 6th port；Channel selection switch is output to by third port and fifth port；7th port of channel selection switch and the 8th port connect indirect heating type microwave power detector respectively, and the 9th port of channel selection switch and the tenth port connect microwave frequency detector；To realize the detection to microwave signal power, phase, frequency.
Description
Technical field
The invention proposes clamped beam T junction indirect heating type microwave signal detector devices, belong to microelectromechanical systems
Technical field.
Background technique
Microwave signal phase measurement occupies highly important status in microwave measurement.With the increase of frequency, signal
Wavelength is gradually approached with component sizes various in circuit, and voltage, electric current exist all in the form of wave in circuit, the phase of signal
Delay is so that not only the voltage at different location, electric current are different in synchronization amplitude in circuit, but also at same position
Voltage, electric current it is also different in different moments.It therefore is necessary in the phase that signal was grasped and controlled to microwave frequency band
's.The present invention be based on a kind of one single chip of Si technological design and meanwhile realize detection microwave power, phase, frequency clamped beam
T junction indirect heating type microwave signal detector device.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of clamped beam T junction indirect heating type microwave signal detector device,
The detection function module for being of coupled connections different using six port clamped beam Coupler ports, and will be to be measured by analog-to-digital conversion
Parameter is directly displayed on LCD screen, to realize a chip simultaneously to the power of microwave signal, phase, three kinds of frequency
The detection of microwave parameter, the benefit with low-power consumption, low cost.
Technical solution: clamped beam T junction indirect heating type microwave signal detector device of the invention is by sensor, modulus
Conversion, MCS51 single-chip microcontroller and liquid crystal display four big module composition, this four big module is again by the little module and electricity on some bases
Road is constituted.
Wherein Sensor section is by six port clamped beam couplers, channel selection switch, microwave frequency detector, microwave phase
Bit detector composition；The first port of six port clamped beam couplers is to third port, the 4th port and first port to
Five ports, the power degree of coupling of the 6th port are identical, and measured signal is inputted through first port, is output between first by second port
Heated microwave power sensor is connect, the first T junction function of microwave phase detector device is output to by the 4th port and the 6th port
Rate synthesizer and the second T junction power combiner, and connect by the first T junction power combiner and the second T junction power combiner
4th indirect heating type microwave power detector and the 5th connects heated microwave power sensor；By third port and fifth port
It is output to channel selection switch；7th port of channel selection switch and the 8th port connect the second indirect heating type micro-wave function respectively
Rate sensor and third indirect heating type microwave power detector, the 9th port of channel selection switch and the tenth port connect microwave
The third T junction power combiner of frequency detector connects the 6th indirect heating type microwave power by third T junction power combiner
Sensor；To realize the detection to microwave signal power, phase, frequency.
Wherein, six port clamped beam couplers are by co-planar waveguide, dielectric layer, air layer and across clamped beam structure above it
At；Co-planar waveguide is produced on SiO2On layer, anchoring area is produced on co-planar waveguide, the lower section metallization medium layer of clamped beam, and with sky
Gas-bearing formation, clamped beam collectively form coupled capacitor structure, and the co-planar waveguide length between two clamped beams is λ/4；
Second big module is analog-to-digital conversion part, its main function is the function that will be exported in three little modules of sensor
Rate is directly changed into digital signal, this part is mainly by STM32 microprocessor and the peripheral circuit being made of AD620 chip
It is constituted.
Followed by MCS51 single chip part, its main function are exactly that each voltage value progress formula is calculated to need
The numerical value of frequency, phase and the power wanted.
Finally be exactly liquid-crystal display section, its main function be exactly the digital signal that will be obtained directly carry out showing it is defeated
Out, the frequency of measured signal, the reading of phase and power are obtained.
The utility model has the advantages that
1) clamped beam T junction indirect heating type microwave signal detector device of the invention by the power of microwave signal, phase,
Three kinds of survey modules of frequency are integrated together, and carry out coupling input signal to different using the clamped beam of six port clamped beam couplers
Detection function module, realize a chip simultaneously to the power of microwave signal, phase, three kinds of microwave parameters of frequency detection,
Benefit with low-power consumption, low cost；
2) clamped beam T junction indirect heating type microwave signal detector device application indirect heating type microwave power of the invention
Sensor detects the power of microwave signal, has preferable microwave property and without DC power；
3) clamped beam T junction indirect heating type microwave signal detector device of the invention is realized using T junction and is believed microwave
Number power combing and distribution, avoid the processing of isolation resistance in traditional Wilkinson power divider to microwave property
It influences；
4) two T junction power combiners of microwave phase detector module application in the present invention, a T junction power distribution
Device and two indirect heating type microwave power detectors realize 0-360 ° of phase-detection.
Detailed description of the invention
Fig. 1 is clamped beam T junction indirect heating type microwave signal detector device structural block diagram of the present invention,
Fig. 2 is clamped beam T junction indirect heating type microwave signal detector device functional block diagram of the present invention,
Fig. 3 is the top view of six port clamped beam couplers,
Fig. 4 is AA ' the directional profile figure of six port clamped beam coupler of Fig. 3,
Fig. 5 is the top view of channel selection switch,
Fig. 6 is AA ' the directional profile figure of Fig. 5 channel selection switch,
Fig. 7 is the top view of T junction power divider/synthesizer,
Fig. 8 is the top view of indirect heating type microwave power detector,
Fig. 9 is AA ' the directional profile figure of Fig. 8 indirect heating type microwave power detector,
Figure 10 is the circuit diagram of Fig. 1 analog-to-digital conversion module.
It include: six port clamped beam couplers 1, channel selection switch 2, microwave frequency detector 3, microwave phase inspection in figure
Survey device 4, first indirect heating type microwave power detector 5-1 the second indirect heating type microwave power detector 5-2, third are indirect
Heated microwave power sensor 5-3, the 4th indirect heating type microwave power detector 5-4, the 5th indirect heating type micro-wave function
Rate sensor 5-5, the 6th indirect heating type microwave power detector 5-6, the first T junction power combiner 6-1, the second T junction
Power combiner 6-2, third T junction power combiner 6-3, T junction power divider 7, Si substrate 8, SiO2 Layer 9, coplanar wave
Lead 10, anchoring area 11, dielectric layer 12, clamped beam 13, cantilever beam 14, air layer 15, air bridges 16, terminal resistance 17, P-type semiconductor
Arm 18, N-type semiconductor arm 19, output electrode 20, hot end 21, cold end 22, substrate film structure 23, pull-down electrode 24, first end
Mouth 1-1, second port 1-2, third port 1-3, the 4th port 1-4, fifth port 1-5, the 6th port 1-6, the 7th port 2-
1, the 8th port 2-2, the 9th port 2-3, the tenth port 2-4, the tenth Single port 7-1, the tenth Two-port netwerk 7-2, the 13rd port
7-3。
Specific embodiment
Clamped beam T junction indirect heating type microwave signal detector device of the present invention is by six port clamped beam couplers 1, channel
Switch 2, microwave frequency detector 3 are selected, the cascade of microwave phase detector device 4 is constituted；Six port clamped beam couplers 1 are by coplanar wave
10 are led, dielectric layer 12, air layer 15 and clamped beam 13 are constituted；Co-planar waveguide 10 is produced on SiO2On layer 9, the anchoring area of clamped beam 13
11 are produced on co-planar waveguide 10, and the lower section of clamped beam 13 is deposited with dielectric layer 12, and with air layer 15, the common structure of clamped beam 13
At coupled capacitor structure, 10 length of co-planar waveguide between two clamped beams 13 is λ/4；Channel selection switch 2 is by co-planar waveguide
10, anchoring area 11, dielectric layer 12, cantilever beam 14, the composition of pull-down electrode 26；The anchoring area 11 of cantilever beam 14 is produced on co-planar waveguide 10
On, pull-down electrode 24 is made below cantilever beam 14, and collectively form construction of switch with 24 upper dielectric layer 12 of pull-down electrode；Microwave
Frequency detector 3 is made of third T junction power combiner 6-3 and the 6th indirect heating type microwave power detector 5-6 cascade；
Microwave phase detector device 4 is by the 4th indirect heating type microwave power detector 5-4, the 5th indirect heating type microwave power detector
5-5, the first T junction power combiner 6-1, the second T junction power combiner 6-2, T junction power divider 7 are constituted；T junction
The topological structure of power combiner, T junction power divider is identical, is made of co-planar waveguide 10 and air bridges 15, and signal is from
Ten Single port 7-1 input is T junction power divider 7, and it is T-type that signal is inputted from the tenth Two-port netwerk 7-2, the 13rd port 7-3
Tie power combiner；
First port 1-1 to third port 1-3, the 4th port 1-4 and the first port 1- of six port clamped beam couplers 1
1 to fifth port 1-5, the power degree of coupling difference of the 6th port 1-6 is identical；Measured signal is through six port clamped beam couplers 1
First port 1-1 input, and the first indirect heating type microwave power detector 5-1 is output to by second port 1-2, by the 4th
Port 1-4 and the 6th port 1-6 are output to microwave phase detector device 4, are output to by third port 1-3 and fifth port 1-5 logical
Road selects switch 2；7th port 2-1 of channel selection switch 2 and the 8th port 2-2 connects the second indirect heating type micro-wave function respectively
Rate sensor 5-2 and third indirect heating type microwave power detector 5-3, the 9th port 2-3 of channel selection switch 2 and the tenth
Port 2-4 connects microwave frequency detector 3；Analog-to-digital conversion mould is connected to after each indirect heating type microwave power detector
Block, the digital signal for then obtaining these analog-to-digital conversions all accesses MCS51 single-chip microcontroller and carries out formula calculating, finally by liquid crystal
Display screen shows the numerical values recited of output frequency, phase and power, realizes a chip while the power to microwave signal, phase
Position, the detection of three kinds of microwave parameters of frequency, the benefit with low-power consumption, low cost.The detection of its microwave power, phase, frequency
Principle can be explained as follows:
Power detection: microwave power as shown in Figure 7 is inputted from input port, is input to terminal resistance by co-planar waveguide 10
17 are converted to heat；P-type semiconductor arm 18 and N-type semiconductor arm 19 constitute thermocouple, and thermocouple is close to 17th area of terminal resistance
Domain is as hot end 21, and thermocouple is close to 20 region of output electrode as cold end 22；According to Seebeck effect, exported by measurement
Microwave power size is inputted known to the thermoelectrical potential of electrode 20；Substrate thinning is constituted substrate film structure by 21 back of pyrometer fire-end
23 to improve detection sensitivity；Watt level P can be expressed by following formula:
(1)
Frequency detecting: third port 1-3 and fiveth end of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1
Mouth 1-5 is output to channel selection switch 2；7th port 2-1 of channel selection switch 2 and the 8th port 2-2 connect between second respectively
Meet heated microwave power sensor 5-2 and third indirect heating type microwave power detector 5-3, the of channel selection switch 2
Nine port 2-3 and the tenth port 2-4 connect microwave frequency detector 3；The cantilever beam 14 of channel selection switch 2 is grounded, pull-down electrode
24 connect driving voltage, and when driving voltage is more than or equal to cut-in voltage, cantilever beam 14 is pulled down into, and channel is strobed；When channel is selected
When the port 7 and port 8 for selecting switch 2 are strobed, the output coupling power of six port clamped beam couplers 1 can be tested outP 3WithP 5.10 length of co-planar waveguide between two clamped beams 13 of six port clamped beam couplers 1 is λ/4, at this time port 3 and port
5 phase difference is 90 °, and the phase difference as shown in formula (1) is the linear function of frequency.
(2)
λFor input microwave signal wavelength,cIt is the light velocity,ε erIt is only related with structure for effective dielectric constant.Work as channel selecting
When 9th port 2-3 of switch 2 and the tenth port 2-4 are strobed, two way microwave signals are carried out by T junction power combiner 5
Power combing, and application indirect heating type microwave power detector 5 detects composite signal powerP sSize, can according to formula (2)
Obtain the frequency of input microwave signal.
(3)
P 3,P 5For the power that third port 1-3 is coupled with fifth port 1-5, can be passed by the second indirect heating type microwave power
Sensor 5-2 and third indirect heating type microwave power detector 5-3 detect to obtain.
Phase detectors: fourth port 1-4 and sixth of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1
Port 1-6 is input to microwave phase detector device 4 and carries out phase-detection；Two clamped beams 13 of six port clamped beam couplers 1 it
Between 10 length of co-planar waveguide be λ/4, at this time by the two way microwave signals phase difference of the 4th port 1-4 and the 6th port 1-6
It is 90 °；Input powerP r , identical as measured signal frequencyfThe reference signal of (microwave frequency detector 3 measures), reference signal
It is divided into two-way power and the identical signal of phase through T junction power divider 7, two with the 4th port 1-4 and the 6th port 1-6
Road measured signal carries out power combing through the first T junction power combiner 6-1 and the second T junction power combiner 6-2；Between 4th
After heated microwave power sensor 5-4 and the 5th indirect heating type microwave power detector 5-5 are met to the synthesis of left and right two-way
PowerP cs1,P cs2It is detected, and obtains the phase difference to be measured between reference signal by formula (4)φ。
(4)
P 4,P 6For the power that the 4th port 1-4 is coupled with the 6th port 1-6, andP 4=P 3,P 6=P 5。
Second big module is analog-to-digital conversion part, its main function is the function that will be exported in three little modules of sensor
Rate is directly changed into digital signal, this part is mainly by STM32 microprocessor and the peripheral circuit being made of AD620 chip
It is constituted, then according to formula (1), (2), (3), (4), counter can release the size of corresponding frequency f, phase Φ and power P:
(5)
The preparation method of sensor module includes following in clamped beam T junction indirect heating type microwave signal detector device
Several steps:
1) prepare 4 inches of high resistant Si substrates 8, resistivity is 4000 Ω cm, with a thickness of 400 mm；
2) thermally grown a layer thickness is the SiO2 layer 9 of 1.2 mm；
3) chemical vapor deposition (CVD) grows one layer of polysilicon, with a thickness of 0.4 mm；
4) one layer photoresist of coating and photoetching, in addition to polysilicon resistance region, other regions are photo-etched glue protection, and infuse
Enter phosphorus (P) ion, doping concentration is 1015 cm-2, forms terminal resistance 17；
5) layer photoresist is coated, carries out photoetching with P+ photolithography plate, in addition to 18 region of P-type semiconductor arm, other regions
It is photo-etched glue protection, is then poured into boron (B) ion, doping concentration is 1016 cm-2, forms the P-type semiconductor arm 18 of thermocouple；
6) layer photoresist is coated, carries out photoetching with N+ photolithography plate, in addition to 19 region of N-type semiconductor arm, other regions
It is photo-etched glue protection, is then poured into phosphorus (P) ion, doping concentration is 1016 cm-2, forms the N-type semiconductor arm 19 of thermocouple；
7) layer photoresist, photoetching thermoelectric pile and polysilicon resistance figure are coated, then thermocouple is formed by dry etching
Arm and polysilicon resistance；
8) layer photoresist is coated, photoetching removes co-planar waveguide 10, metal interconnecting wires output electrode 20 and pull-down electrode
Photoresist at 24；
9) electron beam evaporation (EBE) forms first layer gold (Au), with a thickness of 0.3 mm, removes on photoresist and photoresist
Au, removing forms first layer Au, output electrode 20, thermoelectric pile metal interconnecting wires and the pull-down electrode 24 of co-planar waveguide 10；
10) (LPCVD) one layer of Si3N4 is deposited, with a thickness of 0.1mm；
11) layer photoresist, photoetching and the photoresist for retaining 14 lower section of clamped beam 13 and cantilever beam, dry etching are coated
Si3N4 forms dielectric layer 12；
12) uniformly one layer of air layer 15 of coating and litho pattern retain under clamped beam 13 and cantilever beam 14 with a thickness of 2mm
The polyimides of side is as sacrificial layer；
13) photoresist is coated, photoetching removes clamped beam 13, cantilever beam 14, anchoring area 11, co-planar waveguide 10, pull-down electrode 24
And the photoresist of 20 position of output electrode；
14) seed layer for evaporating 500/1500/300A ° of Ti/Au/Ti, removes one thickness of re-plating after the Ti layer at top
Degree is the Au layer of 2 mm；
15) Au on photoresist and photoresist is removed, clamped beam 13, cantilever beam 14, anchoring area 11, co-planar waveguide are formed
10, pull-down electrode 24 and output electrode 22；
16) deep reaction ion etching (DRIE) the substrate material back side makes membrane structure 23；
17) discharge polyimide sacrificial layer: developer solution impregnates, and removes the polyimide sacrificial layer under clamped beam, deionization
Water impregnates slightly, dehydrated alcohol dehydration, volatilizees, dries under room temperature.
Difference with the prior art of the present invention is:
Present invention employs novel six ports clamped beam coupled structures, and this clamped beam coupled structure is from co-planar waveguide
It is coupled out a part in the microwave signal of transmission, and detects power, frequency and the phase of microwave signal using the signal being coupled out
Position size；Power combing and distribution to microwave signal are realized using T junction, avoid traditional Wilkinson power divider
Influence of the processing of middle isolation resistance to microwave property；Microwave signal is detected using indirect heating type microwave power detector
Power has preferable microwave property and without DC power；Clamped beam T junction indirect heating type microwave signal detection of the invention
Instrument realize a chip simultaneously to the power of microwave signal, phase, three kinds of microwave parameters of frequency detection, have low function
The benefit of consumption, low cost.
The structure for meeting conditions above is considered as clamped beam T junction indirect heating type microwave signal detector of the invention
Device.
Claims (3)
1. a kind of clamped beam T junction indirect heating type microwave signal detector device, it is characterised in that the microwave signal detector device
Sensor section by six port clamped beam couplers (1), channel selection switch (2), microwave frequency detector (3), microwave phase
Bit detector (4), the first indirect heating type microwave power detector (5-1), the second indirect heating type microwave power detector (5-
2) it is constituted with third indirect heating type microwave power detector (5-3) cascade；Wherein, the of six port clamped beam couplers (1)
Single port (1-1) arrives fifth port (1-5), the 6th to third port (1-3), the 4th port (1-4) and first port (1-1)
The power degree of coupling of port (1-6) is identical, and measured signal is inputted through first port (1-1), is output to the by second port (1-2)
One indirect heating type microwave power detector (5-1) is output to microwave phase by the 4th port (1-4) and the 6th port (1-6)
The the first T junction power combiner (6-1) and the second T junction power combiner (6-2) of detector (4), and by the first T junction function
Rate synthesizer (6-1) and the second T junction power combiner (6-2) connect the 4th indirect heating type microwave power detector (5-4) and
5th indirect heating type microwave power detector (5-5), reference signal through T junction power divider (7) be divided into two-way power and
The identical signal of phase and the two-way measured signal of the 4th port (1-4) and the 6th port (1-6) are through the first T junction power combing
Device (6-1) and the second T junction power combiner (6-2) carry out power combing；By third port (1-3) and fifth port (1-5)
It is output to channel selection switch (2)；7th port (2-1) of channel selection switch (2) and the 8th port (2-2) connect second respectively
Indirect heating type microwave power detector (5-2) and third indirect heating type microwave power detector (5-3), channel selection switch
(2) the 9th port (2-3) and the tenth port (2-4) meets the third T junction power combiner (6- of microwave frequency detector (3)
3) the 6th indirect heating type microwave power detector (5-6), is connect by third T junction power combiner (6-3)；Add indirectly each
It is all connected to analog-to-digital conversion module after hot type microwave power detector, the digital signal for then obtaining these analog-to-digital conversions is all
It accesses MCS51 single-chip microcontroller and carries out formula calculating, show that the numerical value of output frequency, phase and power is big finally by liquid crystal display
It is small, to realize the detection to microwave signal power, phase, frequency；
Wherein, six port clamped beam couplers (1) are by co-planar waveguide (10), dielectric layer (12), air layer (15) and across at it
Top clamped beam (13) is constituted；Co-planar waveguide (10) is produced on SiO2On layer (9), anchoring area (11) is produced on co-planar waveguide (10)
On, the lower section metallization medium layer (12) of clamped beam (13), and coupled capacitor knot is collectively formed with air layer (15), clamped beam (13)
Structure, co-planar waveguide (10) length between two clamped beams (13) are λ/4.
2. clamped beam T junction indirect heating type microwave signal detector device as described in claim 1, it is characterised in that channel
Selection switch (2) is made of co-planar waveguide (10), anchoring area (11), dielectric layer (12), cantilever beam (14), pull-down electrode (24)；It is outstanding
The anchoring area (11) of arm beam (14) is produced on co-planar waveguide (10), and the lower section of cantilever beam (14) makes pull-down electrode (24), and with
Pull-down electrode (24) upper dielectric layer (12) collectively forms construction of switch；The cantilever beam (14) of channel selection switch (2) is grounded, under
Pulling electrode (24) connects driving voltage；When driving voltage is more than or equal to cut-in voltage, cantilever beam (14) is pulled down into, and channel is strobed.
3. clamped beam T junction indirect heating type microwave signal detector device as described in claim 1, it is characterised in that add indirectly
Hot type microwave function sensor (5) is by Si substrate (8), SiO2Layer (9), co-planar waveguide (10), terminal resistance (17), P-type semiconductor
Arm (18), N-type semiconductor arm (19), output electrode (20) are constituted；Microwave power is input to terminal electricity by co-planar waveguide (10)
Resistance (17) is converted to heat；P-type semiconductor arm (18) and N-type semiconductor arm (19) constitute thermocouple；It is imitated according to Seebeck
It answers, inputs microwave power size known to the thermoelectrical potential of output electrode (20) by measuring.
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| WO2007101916A1 (en) * | 2006-03-09 | 2007-09-13 | Valtion Teknillinen Tutkimuskeskus | Device and method for measuring electrical power |
| CN101332971A (en) * | 2008-07-29 | 2008-12-31 | 东南大学 | Passing type microwave power detector based on microelectronic mechanical cantilever beam and manufacturing method |
| CN101788605B (en) * | 2010-02-01 | 2012-04-11 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103018559B (en) * | 2012-12-26 | 2015-04-15 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103344831B (en) * | 2013-06-19 | 2015-04-29 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
-
2017
- 2017-01-24 CN CN201710052700.9A patent/CN106872797B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007101916A1 (en) * | 2006-03-09 | 2007-09-13 | Valtion Teknillinen Tutkimuskeskus | Device and method for measuring electrical power |
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| CN101332971A (en) * | 2008-07-29 | 2008-12-31 | 东南大学 | Passing type microwave power detector based on microelectronic mechanical cantilever beam and manufacturing method |
| CN101788605B (en) * | 2010-02-01 | 2012-04-11 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103018559B (en) * | 2012-12-26 | 2015-04-15 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103344831B (en) * | 2013-06-19 | 2015-04-29 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
Non-Patent Citations (2)
| Title |
|---|
| AN X-Band Dual Channel Microwave Phase Detector Based on GaAs MMIC Technology;Han Yan 等;《IEEE SENSORS JOURNAL》;20160901;第16卷(第17期);全文 |
| 基于MEMS技术的差分式微波信号相位检测器;焦永昌 等;《东南大学学报》;20090131;第39卷(第1期);全文 |
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