CN106841788B - The online given frequency microwave phase detector device of clamped beam T junction indirect heating - Google Patents
The online given frequency microwave phase detector device of clamped beam T junction indirect heating Download PDFInfo
- Publication number
- CN106841788B CN106841788B CN201710052662.7A CN201710052662A CN106841788B CN 106841788 B CN106841788 B CN 106841788B CN 201710052662 A CN201710052662 A CN 201710052662A CN 106841788 B CN106841788 B CN 106841788B
- Authority
- CN
- China
- Prior art keywords
- port
- clamped beam
- indirect heating
- power
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Resistance Or Impedance (AREA)
Abstract
The online given frequency microwave phase detector device of clamped beam T junction indirect heating of the invention is made of the cascade of six port clamped beam couplers, microwave phase detector device and indirect heating type micro-wave function sensor；Six port clamped beam couplers are made of co-planar waveguide, dielectric layer, air layer and clamped beam；Co-planar waveguide is produced on SiO2On layer, the lower section metallization medium layer of clamped beam, and coupled capacitor structure is collectively formed with air layer, the co-planar waveguide length between two clamped beams is λ/4；The first port of six port clamped beam couplers to third port, the 4th and to the power degree of coupling of first port to fifth port, the 6th port it is identical, measured signal is inputted through the first port of six port clamped beam couplers, indirect heating type microwave power detector is output to by third port and fifth port, microwave phase detector device is output to by the 4th port and the 6th port, junior's processing circuit is output to by second port；Finally realize the 0-360 ° of phase on-line checking to given frequency signal.
Description
Technical field
The invention proposes the online given frequency microwave phase detector devices of clamped beam T junction indirect heating, belong to micro- electricity
The technical field of sub- mechanical system.
Background technique
Microwave signal phase measurement occupies highly important status in microwave measurement.With the increase of frequency, signal
Wavelength is gradually approached with component sizes various in circuit, and voltage, electric current exist all in the form of wave in circuit, the phase of signal
Delay is so that not only the voltage at different location, electric current are different in synchronization amplitude in circuit, but also at same position
Voltage, electric current it is also different in different moments.It therefore is necessary in the phase that signal was grasped and controlled to microwave frequency band
, the phase of microwave signal is also just at an important measurement parameter.The present invention is based on a kind of realization of Si technological design
The online given frequency microwave phase detector device of clamped beam T junction indirect heating of online phase-detection.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of online given frequency microwaves of clamped beam T junction indirect heating
Phase detectors couple fraction signal using six port clamped beam couplers and carry out phase-detection, and major part detects letter
It number can be input in next stage processing circuit, realize the 0-360 ° of phase on-line checking to given frequency signal, and have low
The benefit of power consumption.
Technical solution: the online given frequency microwave phase detector device of clamped beam T junction indirect heating of the invention is by six
Port clamped beam coupler, microwave phase detector device, the first indirect heating type microwave power detector and with the second indirect heating
The cascade of type micro-wave power sensor is constituted；
In the present invention, the first port of six port clamped beam couplers is to third port, the 4th port and first end
Mouthful to fifth port, the power degree of coupling of the 6th port difference it is identical, measured signal through six port clamped beam couplers first
Port input is respectively outputted to the first indirect heating type microwave power detector and second indirectly by third port and fifth port
Heated microwave power sensor is output to microwave phase detector device by the 4th port and the 6th port, is exported by second port
To junior's processing circuit；
Wherein, the structure of six port clamped beam couplers is symmetrical set with its center line, by co-planar waveguide, medium
Layer, air layer and clamped beam are constituted；Co-planar waveguide is produced on SiO2On layer, SiO2Layer makes on a si substrate, the anchoring area of clamped beam
It is produced on co-planar waveguide, the lower section metallization medium layer of clamped beam, and collectively form coupled capacitor knot with air layer, clamped beam
Structure, the co-planar waveguide length between two clamped beams are λ/4.
The utility model has the advantages that
1) the online given frequency microwave phase detector device of clamped beam T junction indirect heating of the invention is solid using six ports
Strutbeam coupler carries out phase-detection to couple fraction signal, and most of signal can be input to next stage processing circuit
In, realize the 0-360 ° of phase on-line checking to given frequency signal.
2) the online given frequency microwave phase detector device application indirect heating of clamped beam T junction indirect heating of the invention
Type micro-wave power sensor detects the power of microwave signal, has preferable microwave property and without DC power；
3) clamped beam T junction direct-type microwave signal detector of the invention realizes the function to microwave signal using T junction
Rate synthesis and distribution, avoid influence of the processing of isolation resistance in traditional Wilkinson power divider to microwave property；
4) two T junction power combiners of microwave phase detector module application in the present invention, a T junction power distribution
Device and two indirect heating type microwave power detectors realize 0-360 ° of phase-detection.
Detailed description of the invention
Fig. 1 is the online given frequency microwave phase detector device functional block diagram of clamped beam T junction indirect heating of the present invention,
Fig. 2 is the top view of six port clamped beam couplers,
Fig. 3 is AA ' the directional profile figure of six port clamped beam coupler of Fig. 2,
Fig. 4 is the top view of T junction power divider/synthesizer,
Fig. 5 is the top view of indirect heating type microwave power detector,
Fig. 6 is AA ' the directional profile figure of Fig. 5 indirect heating type microwave power detector.
It include: six port clamped beam couplers 1, microwave phase detector device 2, the first indirect heating type microwave power biography in figure
Sensor 3-1, the second indirect heating type microwave power detector 3-2, third indirect heating type microwave power detector 3-3, the 4th
Indirect heating type microwave power detector 3-4, the first T junction power combiner 4-1, the second T junction power combiner 4-2, T-type
Tie power divider 5, Si substrate 6, SiO2Layer 7, co-planar waveguide 8, anchoring area 9, dielectric layer 10, clamped beam 11, air layer 12, air
Bridge 13, terminal resistance 14, P-type semiconductor arm 15, N-type semiconductor arm 16, output electrode 17, hot end 18, cold end 19, substrate film
Structure 20, first port 1-1, second port 1-2, third port 1-3, the 4th port 1-4, fifth port 1-5, the 6th port 1-
6, the 7th port 4-1, the 8th port 4-2, the 9th port 4-3.
Specific embodiment
The online given frequency microwave phase detector device of clamped beam T junction indirect heating of the present invention is by six port clamped beam couplings
Clutch 1, microwave phase detector device 2, the first indirect heating type microwave power detector 3-1 and the second indirect heating type microwave power
Sensor 3-2 cascade is constituted；
First port 1-1 to third port 1-3, the 4th port 1-4 and the first port of six port clamped beam couplers 1
1-1 to fifth port 1-5, the power degree of coupling difference of the 6th port 1-6 are identical, and measured signal is through six port clamped beam couplers
1 first port 1-1 input, is respectively outputted to the first indirect heating type microwave power by third port 1-3 and fifth port 1-5
Sensor 3-1 and the second indirect heating type microwave power detector 3-2, is output to micro- by the 4th port 1-4 and the 6th port 1-6
Wave phase detector 2 is output to junior's processing circuit by second port 1-2, realizes the phase-detection to given frequency signal,
And the signal after detecting can be used for other processing circuits.
Microwave phase detector device 2 is by third indirect heating type microwave power detector 3-3, the 4th indirect heating type micro-wave function
Rate sensor 3-4, the first T junction power combiner 4-1, the second T junction power combiner 4-2,5 structure of T junction power divider
At；First T junction power combiner 4-1, the topological structure of the second T junction power combiner 4-2 and T junction power divider 5
It is identical, be made of co-planar waveguide 8 and air bridges 13, signal from the 7th port 4-1 input be T junction power divider 5, signal from
8th port 4-2, the 9th port 4-3 input are the first T junction power combiner 4-1 or the second T junction power combiner 4-2；
The testing principle of its indirect heated microwave power sensor and microwave phase can be explained as follows:
Indirect heating type microwave power detector: microwave power as shown in Figure 5 is inputted from input port, passes through co-planar waveguide
8, which are input to terminal resistance 14, is converted to heat；P-type semiconductor arm 15 and N-type semiconductor arm 16 constitute thermocouple, and thermocouple leans on
Nearly 14 region of terminal resistance is as hot end 18, and thermocouple is close to 17 region of output electrode as cold end 19；It is imitated according to Seebeck
It answers, inputs microwave power size known to the thermoelectrical potential of output electrode 17 by measuring；18 back of hot end of thermocouple subtracts substrate
Thin composition substrate film structure 20 is to improve detection sensitivity.
Phase detectors: third port 1-3 and fiveth of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1
Port 1-5 is separately input to the first indirect heating type microwave power detector 3-1 and the second indirect heating type microwave power sensing
Device 3-2 carries out coupled power detection, fourth port 1-4 and sixth port 1-6 of the microwave signal through six port clamped beam couplers 1
It is input to microwave phase detector device 2 and carries out phase-detection；It is coplanar between two clamped beams 11 of six port clamped beam couplers 1
8 length of waveguide is λ/4, is at this time 90 ° by the two way microwave signals phase difference of port 4 and port 6；Input power Pr, with to
Survey the reference signal of the identical f (given frequency) of signal frequency, reference signal through T junction power divider 5 be divided into two-way power and
The identical signal of phase, the two-way measured signal with the 4th port 1-4 and the 6th port 1-6 is through the first T junction power combiner
4-1 and the first T junction power combiner 4-1 carries out power combing；Third indirect heating type microwave power detector 3-3 and the 4th
Indirect heating type microwave power detector 3-4 is to the power P after the synthesis of left and right two-waycs1, Pcs2It is detected, and passes through formula
(1) phase difference to be measured between reference signal is obtained
P4, P6For the coupled power of port 4 and port 6, and P4=P3, P6=P5Its watt level is by third indirect heating
Type micro-wave power sensor 3-3 and the 4th indirect heating type microwave power detector 3-4 are measured.
The preparation method of the online given frequency microwave phase detector device of clamped beam T junction indirect heating includes following
Step:
1) prepare 4 inches of high resistant Si substrates 6, resistivity is 4000 Ω cm, with a thickness of 400mm；
2) thermally grown a layer thickness is the SiO of 1.2mm2Layer 7；
3) chemical vapor deposition (CVD) grows one layer of polysilicon, with a thickness of 0.4mm；
4) one layer photoresist of coating and photoetching, in addition to polysilicon resistance region, other regions are photo-etched glue protection, and infuse
Enter phosphorus (P) ion, doping concentration 1015cm-2, form terminal resistance 14；
5) layer photoresist is coated, P is used+Photolithography plate carries out photoetching, in addition to 15 region of P-type semiconductor arm, other regions
It is photo-etched glue protection, is then poured into boron (B) ion, doping concentration 1016cm-2, form the P-type semiconductor arm 15 of thermocouple；
6) layer photoresist is coated, N is used+Photolithography plate carries out photoetching, in addition to 16 region of N-type semiconductor arm, other regions
It is photo-etched glue protection, is then poured into phosphorus (P) ion, doping concentration 1016cm-2, form the N-type semiconductor arm 16 of thermocouple；
7) layer photoresist, photoetching thermoelectric pile and polysilicon resistance figure are coated, then thermocouple is formed by dry etching
Arm and polysilicon resistance；
8) layer photoresist is coated, photoetching removes the photoetching at co-planar waveguide 8, metal interconnecting wires and output electrode 17
Glue；
9) electron beam evaporation (EBE) forms first layer gold (Au), with a thickness of 0.3mm, removes on photoresist and photoresist
Au, removing forms the first layer Au, thermoelectric pile metal interconnecting wires and output electrode 17 of co-planar waveguide 8；
10) (LPCVD) one layer of Si is deposited3N4, with a thickness of 0.1mm；
11) layer photoresist, photoetching and the photoresist for retaining 11 lower section of clamped beam, dry etching Si are coated3N4, formed and be situated between
Matter layer 10；
12) one layer of air layer 13 and litho pattern are uniformly coated, with a thickness of 2mm, the polyamides for retaining 11 lower section of clamped beam is sub-
Amine is as sacrificial layer；
13) photoresist is coated, photoetching removes the photoetching of clamped beam 11,17 position of anchoring area 9, co-planar waveguide 8 and output electrode
Glue；
14) 500/1500/300A is evaporated°Ti/Au/Ti seed layer, remove top Ti layer after one thickness of re-plating
Degree is the Au layer of 2mm；
15) Au on photoresist and photoresist is removed, clamped beam 11, anchoring area 9, co-planar waveguide 8 and output electrode are formed
17；
16) deep reaction ion etching (DRIE) the substrate material back side makes membrane structure 20；
17) discharge polyimide sacrificial layer: developer solution impregnates, and removes the polyimide sacrificial layer under clamped beam, deionization
Water impregnates slightly, dehydrated alcohol dehydration, volatilizees, dries under room temperature.
Difference with the prior art of the present invention is:
Present invention employs novel six ports clamped beam coupled structures, wherein the first end of six port clamped beam couplers
The power of mouth 1-1 to third port 1-3, the 4th port 1-4 and first port 1-1 to fifth port 1-5, the 6th port 1-6
The degree of coupling is identical；This clamped beam coupled structure is coupled out the signal of fraction from the microwave signal of coplanar wave guide transmission to examine
The phase size of microwave signal is surveyed, and most of signal can be input in next stage processing circuit；It is realized using T junction to micro-
The power combing of wave signal and distribution avoid the processing of isolation resistance in traditional Wilkinson power divider to microwave
The influence of energy；The power of microwave signal is detected using indirect heating type microwave power detector, and there is preferable microwave property
And without DC power；The online unknown frequency microwave phase detector device of clamped beam of the invention, realizes to unknown frequency signal
0-360 ° of phase on-line checking.
The structure for meeting conditions above is considered as the online unknown frequency microwave phase of clamped beam indirect heating of the invention
Detector.
Claims (2)
1. a kind of online given frequency microwave phase detector device of clamped beam T junction indirect heating, it is characterised in that phase inspection
Device is surveyed by six port clamped beam couplers (1), microwave phase detector module (2), the first indirect heating type micro-wave function sensor (3-
1) it is constituted with the cascade of the second indirect heating type micro-wave function sensor (3-2)；Wherein, the first of six port clamped beam couplers (1)
Fifth port (1-5), the 6th end are arrived to third port (1-3), the 4th port (1-4) and first port (1-1) in port (1-1)
The power degree of coupling difference of mouth (1-6) is identical, and measured signal is inputted through the first port (1-1) of six port clamped beam couplers,
First indirect heating type microwave power detector (3-1) and are respectively outputted to by third port (1-3) and fifth port (1-5)
Two indirect heating type microwave power detectors (3-2) are output to microwave phase by the 4th port (1-4) and the 6th port (1-6)
Detection module (2) is output to junior's processing circuit by second port (1-2), and reference signal is through T junction power divider (5) point
At two-way power and the identical signal of phase, passed through respectively with the two-way measured signal of the 4th port (1-4) and the 6th port (1-6)
First T junction power combiner (4-1) and the second T junction power combiner (4-2) carry out power combing；Third indirect heating type
Microwave power detector (3-3) and the 4th indirect heating type microwave power detector (3-4) are to the power after the synthesis of left and right two-way
Pcs1, Pcs2 are detected；
Wherein, the structure of six port clamped beam couplers (1) is symmetrical set with its center line, by co-planar waveguide (8), medium
Layer (10), air layer (12) and clamped beam (11) are constituted；Co-planar waveguide (8) is produced on SiO2 layers (7), SiO2 layers (7) production
On Si substrate (6), the anchoring area (9) of clamped beam (11) is produced on co-planar waveguide (8), the lower section deposition medium of clamped beam (11)
Layer (10), and coupled capacitor structure is collectively formed with air layer (12), clamped beam (11), it is coplanar between two clamped beams (11)
Waveguide (8) length is λ/4.
2. the online given frequency microwave phase detector device of clamped beam T junction indirect heating as described in claim 1, feature
Be indirect heating type micro-wave function sensor (3) by Si substrate (6), SiO2 layers (7), co-planar waveguide (8), terminal resistance (14), P
Type semiconductor arm (15), N-type semiconductor arm (16), output electrode (17) are constituted；Microwave power is input to by co-planar waveguide (8)
Terminal resistance (14) is converted to heat；P-type semiconductor arm (15) and N-type semiconductor arm (16) constitute thermocouple, and thermocouple leans on
Nearly terminal resistance (14) region is as hot end (18), close to output electrode (17) region as cold end (19).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710052662.7A CN106841788B (en) | 2017-01-24 | 2017-01-24 | The online given frequency microwave phase detector device of clamped beam T junction indirect heating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710052662.7A CN106841788B (en) | 2017-01-24 | 2017-01-24 | The online given frequency microwave phase detector device of clamped beam T junction indirect heating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106841788A CN106841788A (en) | 2017-06-13 |
| CN106841788B true CN106841788B (en) | 2019-03-19 |
Family
ID=59121014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710052662.7A Active CN106841788B (en) | 2017-01-24 | 2017-01-24 | The online given frequency microwave phase detector device of clamped beam T junction indirect heating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106841788B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| JP4436065B2 (en) * | 2003-04-23 | 2010-03-24 | 三菱重工業株式会社 | Phase measuring device and space solar power generation system |
| CN101788605B (en) * | 2010-02-01 | 2012-04-11 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103018559B (en) * | 2012-12-26 | 2015-04-15 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103344831B (en) * | 2013-06-19 | 2015-04-29 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
-
2017
- 2017-01-24 CN CN201710052662.7A patent/CN106841788B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4436065B2 (en) * | 2003-04-23 | 2010-03-24 | 三菱重工業株式会社 | Phase measuring device and space solar power generation system |
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| CN101788605B (en) * | 2010-02-01 | 2012-04-11 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103018559B (en) * | 2012-12-26 | 2015-04-15 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103344831B (en) * | 2013-06-19 | 2015-04-29 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
Non-Patent Citations (2)
| Title |
|---|
| Fabrication of the Different Microwave Power Sensor by Seesaw-Type MEMS Membrane;Zhenxiang Yi 等;《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》;20160831;第25卷(第4期);全文 |
| 基于MEMS技术的差分式微波信号相位检测器;焦永昌 等;《东南大学学报》;20090131;第39卷(第1期);全文 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106841788A (en) | 2017-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106841788B (en) | The online given frequency microwave phase detector device of clamped beam T junction indirect heating | |
| CN108279405A (en) | Adaption radar ratio method cantilever beam micro-nano microwave detects and demodulation monolithic system | |
| CN106645920B (en) | Clamped beam T junction indirect heating type microwave signal detector | |
| CN106841793B (en) | The online given frequency microwave phase detector device of clamped beam indirect heating | |
| CN106841794B (en) | Clamped beam T junction directly heats online given frequency microwave phase detector device | |
| CN106872780B (en) | The online unknown frequency microwave phase detector device of clamped beam T junction indirect heating | |
| CN106841796B (en) | The online unknown frequency microwave phase detector device of clamped beam indirect heating | |
| CN106841785B (en) | Clamped beam directly heats online given frequency microwave phase detector device | |
| CN106841787B (en) | Clamped beam T junction directly heats online unknown frequency microwave phase detector device | |
| CN106841782B (en) | Silicon substrate cantilever beam couples direct-heating type unknown frequency millimeter wave phase detectors | |
| CN106841789B (en) | Clamped beam directly heats online unknown frequency microwave phase detector device | |
| CN106841781B (en) | Online millimeter wave phase detectors are directly heated based on silicon substrate cantilever beam T junction | |
| CN106841771B (en) | Clamped beam T junction direct-heating type microwave signal detector | |
| CN106711164B (en) | Clamped beam indirect heating type microwave signal detector | |
| CN108594176A (en) | The direct micro-nano microwave of ratio method cantilever beam detects demodulating system in adaption radar | |
| CN106814259B (en) | Clamped beam direct-heating type microwave signal detector | |
| CN106872797B (en) | Clamped beam T junction indirect heating type microwave signal detector device | |
| CN107064617B (en) | Silicon substrate cantilever beam couples indirect heating type unknown frequency millimeter wave phase detectors | |
| CN108469606A (en) | Phase comparing method slot-coupled MEMS microwaves detection demodulation monolithic system in adaption radar | |
| CN106841802B (en) | Based on the online millimeter wave phase detectors of silicon substrate cantilever beam T junction indirect heating | |
| CN106841783B (en) | Silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter wave phase detectors | |
| CN106872767B (en) | Clamped beam indirect heating type microwave signal detector device | |
| CN106771601B (en) | Silicon substrate cantilever beam T junction direct-heating type unknown frequency millimeter wave phase detectors | |
| CN108646224A (en) | The direct MEMS microwaves of phase comparing method cantilever beam detect demodulating system in adaption radar | |
| CN108303687A (en) | The direct MEMS microwaves of phase comparing method clamped beam detect demodulating system in adaption radar |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |