CN106841788A - The online given frequency microwave phase detector device of clamped beam T junction indirectly heat - Google Patents
The online given frequency microwave phase detector device of clamped beam T junction indirectly heat Download PDFInfo
- Publication number
- CN106841788A CN106841788A CN201710052662.7A CN201710052662A CN106841788A CN 106841788 A CN106841788 A CN 106841788A CN 201710052662 A CN201710052662 A CN 201710052662A CN 106841788 A CN106841788 A CN 106841788A
- Authority
- CN
- China
- Prior art keywords
- port
- clamped beam
- microwave
- layer
- phase detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
Abstract
The online given frequency microwave phase detector device of clamped beam T junction indirectly heat of the invention is made up of six port clamped beam couplers, microwave phase detector device and the cascade of indirectly heat type micro-wave work(sensor；Six port clamped beam couplers are made up of co-planar waveguide, dielectric layer, air layer and clamped beam；Co-planar waveguide is produced on SiO2On layer, the lower section metallization medium layer of clamped beam, and coupled capacitor structure is collectively formed with air layer, the co-planar waveguide length between two clamped beams is λ/4；The first port of six port clamped beam couplers is to the 3rd port, the 4th and identical to the power degree of coupling of first port to fifth port, the 6th port, measured signal is input into through the first port of six port clamped beam couplers, exported to indirect heating type microwave power detector by the 3rd port and fifth port, by the 4th port and the output of the 6th port to microwave phase detector device, by second port output to subordinate's process circuit；The final 0 360 ° of phase on-line checkings realized to given frequency signal.
Description
Technical field
The present invention proposes the online given frequency microwave phase detector device of clamped beam T junction indirectly heat, belongs to micro- electricity
The technical field of sub- mechanical system.
Background technology
Microwave signal phase measurement occupies highly important status in microwave measurement.With the increase of frequency, signal
Wavelength is progressively approached with various component sizes in circuit, and voltage, electric current exist all in the form of ripple in circuit, the phase of signal
Postpone to cause that not only the voltage of various location, electric current are different in synchronization amplitude in circuit, and at same position
Voltage, electric current also not different in the same time.Therefore grasped in microwave frequency band and the phase of control signal is necessary
, the phase of microwave signal is also just into an important measurement parameter.The present invention is based on a kind of realization of Si technological designs
The online given frequency microwave phase detector device of clamped beam T junction indirectly heat of online phase-detection.
The content of the invention
Technical problem：It is an object of the invention to provide a kind of online given frequency microwave of clamped beam T junction indirectly heat
Phase detectors, fraction signal is coupled using six port clamped beam couplers carries out phase-detection, and most of detection is believed
Number can be input in next stage process circuit, realize the 0-360 ° of phase on-line checking to given frequency signal, and with low
The benefit of power consumption.
Technical scheme：The online given frequency microwave phase detector device of clamped beam T junction indirectly heat of the invention is by six
Port clamped beam coupler, microwave phase detector device, the first indirect heating type microwave power detector and with the second indirectly heat
The cascade of type micro-wave power sensor is constituted；
In the present invention, the first port of six port clamped beam couplers is to the 3rd port, the 4th port and first end
Mouth is identical to fifth port, the power degree of coupling of the 6th port difference, and measured signal is through the first of six port clamped beam couplers
Port is input into, and the first indirect heating type microwave power detector and second indirect is respectively outputted to by the 3rd port and fifth port
Heated microwave power sensor, by the 4th port and the output of the 6th port to microwave phase detector device, is exported by second port
To subordinate's process circuit；
Wherein, the structure of six port clamped beam couplers is symmetrical set with its center line, by co-planar waveguide, medium
Layer, air layer and clamped beam are constituted；Co-planar waveguide is produced on SiO2On layer, SiO2Layer makes on a si substrate, the anchor area of clamped beam
It is produced on co-planar waveguide, the lower section metallization medium layer of clamped beam, and coupled capacitor knot is collectively formed with air layer, clamped beam
Structure, the co-planar waveguide length between two clamped beams is λ/4.
Beneficial effect：
1) port of the online given frequency microwave phase detector device of clamped beam T junction indirectly heat of the invention application six is consolidated
Strutbeam coupler carries out phase-detection coupling fraction signal, and most of signal can be input to next stage process circuit
In, realize the 0-360 ° of phase on-line checking to given frequency signal.
2) the online given frequency microwave phase detector device application indirectly heat of clamped beam T junction indirectly heat of the invention
Type micro-wave power sensor detects the power of microwave signal, with preferable microwave property and without DC power；
3) clamped beam T junction direct-type microwave signal detector of the invention realizes the work(to microwave signal using T junction
Rate synthesizes and distribution, it is to avoid influence of the processing of isolation resistance to microwave property in traditional Wilkinson power dividers；
4) the two T junction power combiners of microwave phase detector module application in the present invention, a T junction power distribution
Device and two indirect heating type microwave power detectors realize 0-360 ° of phase-detection.
Brief description of the drawings
Fig. 1 is the online given frequency microwave phase detector device theory diagram of clamped beam T junction indirectly heat of the present invention,
Fig. 2 is the top view of six port clamped beam couplers,
Fig. 3 is AA ' the directional profile figures of the port clamped beam couplers of Fig. 2 six,
Fig. 4 is the top view of T junction power divider/synthesizer,
Fig. 5 is the top view of indirect heating type microwave power detector,
Fig. 6 is AA ' the directional profile figures of Fig. 5 indirect heating type microwave power detectors.
Figure includes：Six port clamped beam couplers 1, microwave phase detector device 2, the first indirect heating type microwave power is passed
The indirect heating type of sensor 3-1, the second indirect heating type microwave power detector 3-2, the 3rd microwave power detector 3-3, the 4th
The T junction power combiner of indirect heating type microwave power detector 3-4, the first T junction power combiner 4-1, second 4-2, it is T-shaped
Knot power divider 5, Si substrates 6, SiO2Layer 7, co-planar waveguide 8, anchor area 9, dielectric layer 10, clamped beam 11, air layer 12, air
Bridge 13, terminal resistance 14, P-type semiconductor arm 15, N-type semiconductor arm 16, output electrode 17, hot junction 18, cold end 19, substrate film
Structure 20, first port 1-1, second port 1-2, the 3rd port 1-3, the 4th port 1-4, fifth port 1-5, the 6th port 1-
6, the 7th port 4-1, the 8th port 4-2, the 9th port 4-3.
Specific embodiment
The online given frequency microwave phase detector device of clamped beam T junction indirectly heat of the present invention is by six port clamped beam couplings
Clutch 1, microwave phase detector device 2, the first indirect heating type microwave power detector 3-1 and the second indirect heating type microwave power
Sensor 3-2 cascades are constituted；
The port 1-3 of first port 1-1 to the 3rd, the 4th port 1-4 and first port of six port clamped beam couplers 1
1-1 to fifth port 1-5, the power degree of coupling of the 6th port 1-6 distinguish identical, and measured signal is through six port clamped beam couplers
1 first port 1-1 inputs, the first indirect heating type microwave power is respectively outputted to by the 3rd port 1-3 and fifth port 1-5
Sensor 3-1 and the second indirect heating type microwave power detector 3-2, by the 4th port 1-4 and the 6th port 1-6 outputs to micro-
Wave phase detector 2, by second port 1-2 outputs to subordinate's process circuit, realizes the phase-detection to given frequency signal,
And the signal after detection can be used for other process circuits.
Microwave phase detector device 2 is by the 3rd indirect heating type microwave power detector 3-3, the 4th indirectly heat type micro-wave work(
Rate sensor 3-4, the first T junction power combiner 4-1, the second T junction power combiner 4-2, the structure of T junction power divider 5
Into；The topological structure of the first T junction power combiner 4-1, the second T junction power combiner 4-2 and T junction power divider 5
It is identical, be made up of co-planar waveguide 8 and air bridges 13, signal from the 7th port 4-1 input be T junction power divider 5, signal from
8th port 4-2, the 9th port 4-3 input are the first T junction power combiner 4-1 or the second T junction power combiner 4-2；
The Cleaning Principle of its indirect heated microwave power sensor and microwave phase can be explained as follows：
Indirect heating type microwave power detector：Microwave power as shown in Figure 5 is input into from input port, by co-planar waveguide
8 are input to terminal resistance 14 is converted to heat；P-type semiconductor arm 15 and N-type semiconductor arm 16 constitute thermocouple, and thermocouple is leaned on
Used as hot junction 18, thermocouple is near the region of output electrode 17 as cold end 19 in the nearly region of terminal resistance 14；Imitated according to Seebeck
Should, input microwave power size is understood by the thermoelectrical potential for measuring output electrode 17；The back of hot junction 18 of thermocouple subtracts substrate
Thin composition substrate film structure 20 is used to improve detection sensitivity.
Phase detectors：Microwave signal as shown in Figure 1 through six port clamped beam couplers 1 the 3rd port 1-3 and the 5th
Port 1-5 is separately input to the first indirect heating type microwave power detector 3-1 and the second indirect heating type microwave power sensing
Device 3-2 carries out coupled power detection, microwave signal through six port clamped beam couplers 1 the 4th port 1-4 and the 6th port 1-6
Being input to microwave phase detector device 2 carries out phase-detection；It is coplanar between two clamped beams 11 of six port clamped beam couplers 1
The length of waveguide 8 is λ/4, is now 90 ° by the two way microwave signals phase difference of port 4 and port 6；Input power Pr, and treat
Survey the reference signal of the identical f (given frequency) of signal frequency, reference signal through T junction power divider 5 be divided into two-way power and
Phase identical signal, with the two-way measured signal of the 4th port 1-4 and the 6th port 1-6 through the first T junction power combiner
4-1 and the first T junction power combiner 4-1 carry out power combing；3rd indirect heating type microwave power detector 3-3 and the 4th
Indirect heating type microwave power detector 3-4 is to the power P after the synthesis of left and right two-waycs1, Pcs2Detected, and by formula
(1) phase difference and reference signal between to be measured is drawn
P4, P6It is the coupled power of port 4 and port 6, and P4=P3, P6=P5Its watt level is by the 3rd indirectly heat
Type micro-wave power sensor 3-3 and the 4th indirect heating type microwave power detector 3-4 are measured.
The preparation method of the online given frequency microwave phase detector device of clamped beam T junction indirectly heat includes following
Step：
1) 4 inches of high resistant Si substrates 6 are prepared, resistivity is 4000 Ω cm, and thickness is 400mm；
2) thermally grown a layer thickness is the SiO of 1.2mm2Layer 7；
3) chemical vapor deposition (CVD) grows one layer of polysilicon, and thickness is 0.4mm；
4) one layer of photoresist and photoetching are coated, in addition to polysilicon resistance region, other regions are photo-etched glue protection, and note
Enter phosphorus (P) ion, doping concentration is 1015cm-2, form terminal resistance 14；
5) one layer of photoresist is coated, P is used+Photolithography plate carries out photoetching, in addition to the region of P-type semiconductor arm 15, other regions
Glue protection is photo-etched, boron (B) ion is then poured into, doping concentration is 1016cm-2, form the P-type semiconductor arm 15 of thermocouple；
6) one layer of photoresist is coated, N is used+Photolithography plate carries out photoetching, in addition to the region of N-type semiconductor arm 16, other regions
Glue protection is photo-etched, phosphorus (P) ion is then poured into, doping concentration is 1016cm-2, form the N-type semiconductor arm 16 of thermocouple；
7) one layer of photoresist, photoetching thermoelectric pile and polysilicon resistance figure are coated, then thermocouple is formed by dry etching
Arm and polysilicon resistance；
8) one layer of photoresist, the photoetching at photoetching removal co-planar waveguide 8, metal interconnecting wires and output electrode 17 are coated
Glue；
9) electron beam evaporation (EBE) forms ground floor gold (Au), and thickness is 0.3mm, on removal photoresist and photoresist
Au, stripping forms ground floor Au, thermoelectric pile metal interconnecting wires and the output electrode 17 of co-planar waveguide 8；
10) (LPCVD) one layer of Si is deposited3N4, thickness is 0.1mm；
11) one layer of photoresist is coated, photoetching simultaneously retains the photoresist below clamped beam 11, dry etching Si3N4, formed and be situated between
Matter layer 10；
12) one layer of air of uniform coating layer 13 and litho pattern, thickness is 2mm, and the polyamides for retaining the lower section of clamped beam 11 is sub-
Amine is used as sacrifice layer；
13) photoresist, the photoetching of photoetching removal clamped beam 11, anchor area 9, co-planar waveguide 8 and the position of output electrode 17 are coated
Glue；
14) 500/1500/300A is evaporated°Ti/Au/Ti Seed Layer, the thickness of re-plating one after Ti layers at the top of removal
Spend is Au layers of 2mm；
15) Au on photoresist and photoresist is removed, clamped beam 11, anchor area 9, co-planar waveguide 8 and output electrode is formed
17；
16) deep reaction ion etching (DRIE) the backing material back side, makes membrane structure 20；
17) polyimide sacrificial layer is discharged：Developer solution soaks, the polyimide sacrificial layer under removal clamped beam, deionization
Water soaks slightly, absolute ethyl alcohol dehydration, is volatilized under normal temperature, dries.
Difference with the prior art of the present invention is：
Present invention employs six novel port clamped beam coupled structures, wherein the first end of six port clamped beam couplers
Mouth 1-1 to the 3rd port 1-3, the 4th port 1-4 and first port 1-1 to fifth port 1-5, the power of the 6th port 1-6
The degree of coupling is identical；This clamped beam coupled structure is coupled out the signal of fraction to examine from the microwave signal of coplanar wave guide transmission
The phase size of microwave signal is surveyed, and most of signal can be input in next stage process circuit；Realized to micro- using T junction
The power combing of ripple signal and distribution, it is to avoid the processing of isolation resistance is to microwave in traditional Wilkinson power dividers
The influence of energy；The power of microwave signal is detected using indirect heating type microwave power detector, with preferable microwave property
And without DC power；The online unknown frequency microwave phase detector device of clamped beam of the invention, realizes to unknown frequency signal
0-360 ° of phase on-line checking.
The structure for meeting conditions above is considered as the online unknown frequency microwave phase of clamped beam indirectly heat of the invention
Detector.
Claims (2)
1. the online given frequency microwave phase detector device of a kind of clamped beam T junction indirectly heat, it is characterised in that the phase is examined
Device is surveyed to be made up of and the first indirectly heat type micro-wave work(six ports clamped beam coupler (1) and microwave phase detector device (2) cascade
Sensor (3-1) and the cascade of the second indirectly heat type micro-wave work(sensor (3-2) are constituted；Wherein, six port clamped beam coupler
(1) first port (1-1) arrives fifth port (1- to the 3rd port (1-3), the 4th port (1-4) and first port (1-1)
5), the 6th port (1-6) the power degree of coupling difference it is identical, measured signal through six port clamped beam couplers first port
(1-1) is input into, and being respectively outputted to the first indirect heating type microwave power by the 3rd port (1-3) and fifth port (1-5) senses
Device (3-1) and the second indirect heating type microwave power detector (3-2), are exported by the 4th port (1-4) and the 6th port (1-6)
To microwave phase detector device (2), by second port (1-2) output to subordinate's process circuit；
Wherein, the structure of six ports clamped beam coupler (1) is symmetrical set with its center line, by co-planar waveguide (8), medium
Layer (10), air layer (12) and clamped beam (11) are constituted；Co-planar waveguide (8) is produced on SiO2On layer (7), SiO2Layer (7) is produced on
On Si substrates (6), the anchor area (9) of clamped beam (11) is produced on co-planar waveguide (8), the lower section metallization medium layer of clamped beam (11)
(10) coupled capacitor structure, the coplanar ripple between two clamped beams (11), and with air layer (12), clamped beam (11) are collectively formed
(8) length is led for λ/4.
2. the online given frequency microwave phase detector device of clamped beam T junction indirectly heat as claimed in claim 1, its feature
It is indirectly heat type micro-wave work(sensor (3) by Si substrates (6), SiO2Layer (7), co-planar waveguide (8), terminal resistance (14), P
Type semiconductor arm (15), N-type semiconductor arm (16), output electrode (17) is constituted；Microwave power is input to by co-planar waveguide (8)
Terminal resistance (14) is converted to heat；P-type semiconductor arm (15) and N-type semiconductor arm (16) constitute thermocouple, and thermocouple is leaned on
Nearly terminal resistance (14) region is close to output electrode (17) region as cold end (19) as hot junction (18).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710052662.7A CN106841788B (en) | 2017-01-24 | 2017-01-24 | The online given frequency microwave phase detector device of clamped beam T junction indirect heating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710052662.7A CN106841788B (en) | 2017-01-24 | 2017-01-24 | The online given frequency microwave phase detector device of clamped beam T junction indirect heating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106841788A true CN106841788A (en) | 2017-06-13 |
| CN106841788B CN106841788B (en) | 2019-03-19 |
Family
ID=59121014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710052662.7A Active CN106841788B (en) | 2017-01-24 | 2017-01-24 | The online given frequency microwave phase detector device of clamped beam T junction indirect heating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106841788B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| JP4436065B2 (en) * | 2003-04-23 | 2010-03-24 | 三菱重工業株式会社 | Phase measuring device and space solar power generation system |
| CN101788605B (en) * | 2010-02-01 | 2012-04-11 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103018559B (en) * | 2012-12-26 | 2015-04-15 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103344831B (en) * | 2013-06-19 | 2015-04-29 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
-
2017
- 2017-01-24 CN CN201710052662.7A patent/CN106841788B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4436065B2 (en) * | 2003-04-23 | 2010-03-24 | 三菱重工業株式会社 | Phase measuring device and space solar power generation system |
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| CN101788605B (en) * | 2010-02-01 | 2012-04-11 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103018559B (en) * | 2012-12-26 | 2015-04-15 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103344831B (en) * | 2013-06-19 | 2015-04-29 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
Non-Patent Citations (2)
| Title |
|---|
| ZHENXIANG YI 等: "Fabrication of the Different Microwave Power Sensor by Seesaw-Type MEMS Membrane", 《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》 * |
| 焦永昌 等: "基于MEMS技术的差分式微波信号相位检测器", 《东南大学学报》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106841788B (en) | 2019-03-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106645920B (en) | Clamped beam T junction indirect heating type microwave signal detector | |
| CN108279405A (en) | Adaption radar ratio method cantilever beam micro-nano microwave detects and demodulation monolithic system | |
| CN106841788A (en) | The online given frequency microwave phase detector device of clamped beam T junction indirectly heat | |
| CN106841793B (en) | The online given frequency microwave phase detector device of clamped beam indirect heating | |
| CN106872780B (en) | The online unknown frequency microwave phase detector device of clamped beam T junction indirect heating | |
| CN106841787B (en) | Clamped beam T junction directly heats online unknown frequency microwave phase detector device | |
| CN106841796B (en) | The online unknown frequency microwave phase detector device of clamped beam indirect heating | |
| CN106841794B (en) | Clamped beam T junction directly heats online given frequency microwave phase detector device | |
| CN106841785B (en) | Clamped beam directly heats online given frequency microwave phase detector device | |
| CN106841771B (en) | Clamped beam T junction direct-heating type microwave signal detector | |
| CN106841789B (en) | Clamped beam directly heats online unknown frequency microwave phase detector device | |
| CN106814259B (en) | Clamped beam direct-heating type microwave signal detector | |
| CN108594176A (en) | The direct micro-nano microwave of ratio method cantilever beam detects demodulating system in adaption radar | |
| CN107064617B (en) | Silicon substrate cantilever beam couples indirect heating type unknown frequency millimeter wave phase detectors | |
| CN106841781B (en) | Online millimeter wave phase detectors are directly heated based on silicon substrate cantilever beam T junction | |
| CN106872797B (en) | Clamped beam T junction indirect heating type microwave signal detector device | |
| CN106711164B (en) | Clamped beam indirect heating type microwave signal detector | |
| CN106841800B (en) | Silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors | |
| CN106841802B (en) | Based on the online millimeter wave phase detectors of silicon substrate cantilever beam T junction indirect heating | |
| CN108303687A (en) | The direct MEMS microwaves of phase comparing method clamped beam detect demodulating system in adaption radar | |
| CN108508415A (en) | Ratio method slot-coupled MEMS microwaves detection demodulation monolithic system in adaption radar | |
| CN108594188A (en) | The direct MEMS microwaves of ratio method cantilever beam detect demodulating system in adaption radar | |
| CN108896827A (en) | The direct micro-nano microwave of phase comparing method clamped beam detects demodulating system in adaption radar | |
| CN108508417A (en) | Adaption radar phase comparing method clamped beam micro-nano microwave detects and demodulation monolithic system | |
| CN108646224A (en) | The direct MEMS microwaves of phase comparing method cantilever beam detect demodulating system in adaption radar |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |