CN106841789B - Clamped beam directly heats online unknown frequency microwave phase detector device - Google Patents

Clamped beam directly heats online unknown frequency microwave phase detector device Download PDF

Info

Publication number
CN106841789B
CN106841789B CN201710052664.6A CN201710052664A CN106841789B CN 106841789 B CN106841789 B CN 106841789B CN 201710052664 A CN201710052664 A CN 201710052664A CN 106841789 B CN106841789 B CN 106841789B
Authority
CN
China
Prior art keywords
port
microwave
clamped beam
power
direct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710052664.6A
Other languages
Chinese (zh)
Other versions
CN106841789A (en
Inventor
廖小平
闫浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Southeast University
Original Assignee
Southeast University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Southeast University filed Critical Southeast University
Priority to CN201710052664.6A priority Critical patent/CN106841789B/en
Publication of CN106841789A publication Critical patent/CN106841789A/en
Application granted granted Critical
Publication of CN106841789B publication Critical patent/CN106841789B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R25/00Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R21/00Arrangements for measuring electric power or power factor
    • G01R21/02Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R23/00Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
    • G01R23/02Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Measurement Of Resistance Or Impedance (AREA)

Abstract

Clamped beam of the invention directly heats online unknown frequency microwave phase detector device by six port clamped beam couplers, channel selection switch, microwave frequency detector, microwave phase detector device, direct-heating type microwave power detector cascade composition;Six port clamped beam couplers are made of co-planar waveguide, dielectric layer, air layer and clamped beam;The first port of six port clamped beam couplers is identical to third port, the 4th port and first port to fifth port, the power degree of coupling of the 6th port difference, measured signal is inputted through first port, and junior's processing circuit is output to by second port, microwave phase detector device is output to by the 4th port and the 6th port, channel selection switch is output to by third port and fifth port;7th port of channel selection switch and the 8th port connect direct-heating type microwave power detector, and the 9th port of channel selection switch and the tenth port connect microwave frequency detector;Realize the 0-360 ° of phase on-line checking to unknown frequency signal.

Description

Clamped beam directly heats online unknown frequency microwave phase detector device
Technical field
The invention proposes clamped beams to directly heat online unknown frequency microwave phase detector device, belongs to microelectron-mechanical The technical field of system.
Background technique
The phase-detection of microwave signal is in phase-modulator, phase-shift keying (PSK) (PSK), phaselocked loop (PLL), antenna phase direction The test of figure, the phase characteristic for measuring various microwave devices etc. etc., which have, to be extremely widely applied.Therefore in microwave frequency band Grasp and control signal phase be it is necessary, the phase of microwave signal is also just at an important measurement parameter.This Invention is that directly heat online unknown frequency based on a kind of clamped beam for realizing online phase-detection of Si technological design micro- Wave phase detector.
Summary of the invention
Technical problem: the phase detectors in traditional microwave circuit not only need the frequency size of known measured signal, With DC power, and completely consume the detection signal of input;Fraction letter is coupled using six port clamped beam couplers Number carry out frequency detecting and phase-detection, and it is most of detect signal and can be input in next stage processing circuit, realize to not Know 0-360 ° of phase on-line checking of frequency signal, and the benefit with low-power consumption.
Technical solution: clamped beam of the invention directly heats online unknown frequency microwave phase detector device and is consolidated by six ports Strutbeam coupler, channel selection switch, microwave frequency detector, the cascade of microwave phase detector device are constituted;Wherein, six ports are clamped The first port of beam coupler is to third port, the 4th port and first port to fifth port, the power coupling of the 6th port Right difference is identical, and measured signal is inputted through first port, is output to junior's processing circuit by second port, by the 4th port and 6th port is output to the first Wilkinson power combiner and the 2nd Wilkinson power combing of microwave phase detector device Device, and third is output to by the first Wilkinson power combiner and the 2nd Wilkinson power combiner directly heats and decline Wave power sensor and the 4th direct-heating type microwave power detector;Channel selecting is output to by third port and fifth port Switch;7th port of channel selection switch and the 8th port connect the first direct-heating type microwave power detector and second respectively Direct-heating type microwave power detector, the 9th port and the tenth port of channel selection switch connect the of microwave frequency detector Three Wilkinson power combiners, and the 5th direct-heating type microwave power is output to by the 3rd Wilkinson power combiner Sensor realizes the phase on-line checking to unknown frequency signal.Wherein the structure of six port clamped beam couplers is with wherein Heart line is symmetrical set, and is constituted by co-planar waveguide, dielectric layer, air layer and across clamped beam above it;Co-planar waveguide system Make in SiO2On layer, anchoring area is produced on co-planar waveguide, the lower section metallization medium layer of clamped beam, and total with air layer, clamped beam With coupled capacitor structure is constituted, the co-planar waveguide length between two clamped beams is λ/4;
The utility model has the advantages that
1) clamped beam of the invention directly heat online unknown frequency microwave phase detector device by the phase of microwave signal, Frequency is surveyed module and is integrated together, and fraction signal is coupled using six port clamped beam couplers and carries out frequency detecting and phase Detection, and most of signal can be input in next stage processing circuit, realization exists to 0-360 ° of phase of unknown frequency signal Line detection.
2) clamped beam of the invention directly heats online unknown frequency microwave phase detector device and is declined using directly heating Wave power sensor detects the power of microwave signal, sensitivity with higher and without DC power;
3) the microwave phase detector module in the present invention uses two Wilkinson power combiners, a Wilkinson Power divider and two direct-heating type microwave power detectors realize 0-360 ° of phase-detection.
Detailed description of the invention
Fig. 1 is that clamped beam of the present invention directly heats online unknown frequency microwave phase detector device functional block diagram,
Fig. 2 is the top view of six port clamped beam couplers,
Fig. 3 is AA ' the directional profile figure of six port clamped beam coupler of Fig. 2,
Fig. 4 is the top view of channel selection switch,
Fig. 5 is AA ' the directional profile figure of Fig. 4 channel selection switch,
Fig. 6 is the top view of Wilkinson power divider/synthesizer,
Fig. 7 is the top view of direct-heating type microwave power detector,
Fig. 8 is AA ' the directional profile figure of Fig. 7 direct-heating type microwave power detector,
Fig. 9 is BB ' the directional profile figure of Fig. 7 direct-heating type microwave power detector.
It include: six port clamped beam couplers 1, channel selection switch 2, microwave frequency detector 3, microwave phase inspection in figure Survey device 4, the first direct-heating type microwave power detector 5-1, the second direct-heating type microwave power detector 5-2, third is straight Heated microwave power sensor 5-3 is met, the 4th direct-heating type microwave power detector 5-4, the 5th directly heats type micro-wave Power sensor 5-5, the first Wilkinson power combiner 6-1, the 2nd Wilkinson power combiner 6-2, Wilkinson Power divider 7, Si substrate 8, SiO2Layer 9, co-planar waveguide 10, anchoring area 11, dielectric layer 12, clamped beam 13, cantilever beam 14, air Layer 15, air bridges 16, asymmetrical coplanar stripline 17, isolation resistance 18, capacitance top crown 19, output electrode 20, semiconductor Arm 21, metal arm 22, hot end 23, cold end 24, capacitance bottom crown 25, substrate film structure 26, terminal resistance 27, drop-down electricity Pole 28, first port 1-1, second port 1-2, third port 1-3, the 4th port 1-4, fifth port 1-5, the 6th port 1-6, 7th port 2-1, the 8th port 2-2, the 9th port 2-3, the tenth port 2-4, the tenth Single port 7-1, the tenth Two-port netwerk 7-2, 13rd port 7-3.
Specific embodiment
Clamped beam of the present invention directly heats online unknown frequency microwave phase detector device by six port clamped beam couplers 1, channel selection switch 2, microwave frequency detector 3, microwave phase detector device 4, the cascade of direct-heating type microwave power detector 5 It constitutes;Six port clamped beam couplers 1 are by co-planar waveguide 10, dielectric layer 12, air layer 15 and across clamped beam 13 above it It constitutes;Co-planar waveguide 10 is produced on SiO2On layer 9, the anchoring area 11 of clamped beam 13 is produced on co-planar waveguide 10, clamped beam 13 Lower section is deposited with dielectric layer 12, and collectively forms coupled capacitor structure with air layer 15, clamped beam 13, between two clamped beams 13 10 length of co-planar waveguide be λ/4;Channel selection switch 2 is by co-planar waveguide 10, anchoring area 11, dielectric layer 12, cantilever beam 14, drop-down Electrode 28 is constituted;The anchoring area 11 of cantilever beam 14 is produced on co-planar waveguide 10, pull-down electrode 28 is made below cantilever beam, and under 28 upper dielectric layer 12 of pulling electrode collectively forms construction of switch;Microwave frequency detector 3 is by the 3rd Wilkinson power combiner 6-3 and the 5th direct-heating type microwave power detector 5-5 cascade is constituted;Microwave phase detector device 4 is by third direct-heating type Microwave power detector 5-3, the first Wilkinson power combiner 6-1, the 2nd Wilkinson power combiner 6-2, Wilkinson power divider 7 is constituted;First Wilkinson power combiner 6-1, the 2nd Wilkinson power combiner 6- 2 is identical with the topological structure of Wilkinson power divider 7, by co-planar waveguide 10, asymmetrical coplanar stripline 17, isolation resistance 18 and air bridges 16 constitute, signal is Wilkinson power divider 7 from the tenth Single port 7-1 input, and signal is from the 12nd end Mouth 7-2, the 13rd port 7-3 input is the first Wilkinson power combiner 6-1 or the 2nd Wilkinson power combiner 6-2;
First port 1-1 to third port 1-3, the 4th port 1-4 and the port 1 of six port clamped beam couplers 1 are to Five port 1-5, the power degree of coupling difference of the 6th port 1-6 are identical;Measured signal through six port clamped beam couplers 1 first Port 1-1 input, and junior's processing circuit is output to by second port 1-2, it is exported by the 4th port 1-4 and the 6th port 1-6 To microwave phase detector device 4, channel selection switch 2 is output to by third port 1-3 and fifth port 1-5;Channel selection switch 2 The 7th port 2-1 and the 8th port 2-2 connect direct-heating type microwave power detector 5, the 9th port of channel selection switch 2 2-3 and the tenth port 2-4 connect microwave frequency detector 3, realize the phase-detection to unknown frequency signal, and the letter after detection Number it can be used for other processing circuits.The testing principle of its direct-heating type microwave power detector and microwave phase, frequency can To be explained as follows:
Direct-heating type microwave power detector: microwave power as shown in Figure 5 is inputted from input port, passes through co-planar waveguide 10, which are input to the consumption of terminal resistance 27, is converted to heat;Semiconductor arm 21 and metal arm 22 constitute thermocouple, the centre of thermocouple Region is as hot end 23, and the fringe region of thermocouple is as cold end 24;According to Seebeck effect, by measuring output electrode 20 Thermoelectrical potential known to input microwave power size;Capacitance top crown 19, capacitance bottom crown 25 and dielectric layer 11 are constituted Capacitance prevents the output electrode 20 short-circuit;23 back of hot end of thermocouple by substrate thinning constitute substrate film structure 26 with Improve detection sensitivity.
Frequency detecting: third port 1-3 and fiveth end of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1 Mouth 1-5 is output to channel selection switch 2;7th port 2-1 of channel selection switch 2 and the 8th port 2-2 connect direct-heating type Microwave power detector 5, the 9th port 2-3 of channel selection switch 2 and the tenth port 2-4 connect microwave frequency detector 3;Channel The cantilever beam 14 of switch 2 is selected to be grounded, pull-down electrode 28 connects driving voltage, when driving voltage is more than or equal to cut-in voltage, hangs Arm beam 14 is pulled down into, and channel is strobed;It, can when the 7th port 2-1 of channel selection switch 2 and the 8th port 2-2 are strobed To test out the output coupling power P of six port clamped beam couplers 13And P5.Two of six port clamped beam couplers 1 are clamped 10 length of co-planar waveguide between beam 13 is λ/4, and the phase difference of port 3 and port 5 is 90 ° at this time, and the phase as shown in formula (1) Potential difference is the linear function of frequency.
λ is the wavelength for inputting microwave signal, and c is the light velocity, εerIt is only related with device architecture for effective dielectric constant.Work as channel When the port 9 of switch 2 and port 10 being selected to be strobed, two way microwave signals carry out power by Wilkinson power combiner 6 Synthesis, and application direct-heating type microwave power detector 5 detects composite signal power PsSize can be obtained according to formula (2) Input the frequency of microwave signal.
P3, P5It, can be by direct-heating type microwave power detector for the coupled power of third port 1-3 and fifth port 1-5 5 detections.
Phase detectors: fourth port 1-4 and sixth of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1 Port 1-6 is input to microwave phase detector device 4 and carries out phase-detection;Two clamped beams 13 of six port clamped beam couplers 1 it Between 10 length of co-planar waveguide be λ/4, at this time by the two way microwave signals phase difference of the 4th port 1-4 and the 6th port 1-6 It is 90 °;Input power is known as Pr, the reference signal of f (microwave frequency detector 3 measures) identical as measured signal frequency, ginseng It examines signal and is divided into two-way power and the identical signal of phase and the 4th port 1-4 and the 6th end through Wilkinson power divider 7 The two-way measured signal of mouthful 1-6 through the first Wilkinson power combiner 6-1 and the 2nd Wilkinson power combiner 6-2 into Row power combing;Power P after 4 pairs of direct-heating type microwave power detector or so two-way synthesiscs1, Pcs2It is detected, and The phase difference between measured signal and reference signal is obtained by formula (3)
P4, P6For the power that the 4th port 1-4 is coupled with the 6th port 1-6, and P4=P3, P6=P5
Clamped beam directly heats the preparation method of online unknown frequency microwave phase detector device including the following steps:
1) prepare 4 inches of high resistant Si substrates 8, resistivity is 4000 Ω cm, with a thickness of 400mm;
2) thermally grown a layer thickness is the SiO of 1.2mm2Layer 9;
3) chemical vapor deposition (CVD) grows one layer of polysilicon, with a thickness of 0.4mm;
4) coating photoresist and photoetching, in addition to polysilicon resistance region, other regions are photo-etched glue protection, and inject phosphorus (P) ion, doping concentration 1015cm-2, form isolation resistance 18 and terminal resistance 27;
5) one layer photoresist of coating, one layer photoresist of photoetching polysilicon resistance graphic application, photoetching polysilicon resistance figure, Isolation resistance 18, terminal resistance 27 and semiconductor arm 21 are formed by dry etching again;
6) layer photoresist is coated, photoetching removes co-planar waveguide 10, asymmetrical coplanar stripline 17, metal interconnecting wires drop-down electricity Photoresist at pole 28 and output electrode 20;
7) electron beam evaporation (EBE) first layer is golden (Au), with a thickness of 0.3mm, removes the Au on photoresist and photoresist, Removing forms first layer Au, the thermoelectric pile metal interconnecting wires of co-planar waveguide 10 and asymmetrical coplanar stripline 17, pole under capacitance Plate 25, pull-down electrode 28 and output electrode 20;
8) (LPCVD) one layer of Si is deposited3N4, with a thickness of 0.1mm;
9) layer photoresist is coated, photoetching simultaneously retains capacitance, and the photoresist of 14 lower section of clamped beam 13 and cantilever beam is done Method etches Si3N4, form dielectric layer 12;
10) uniformly one layer of air layer 15 of coating and litho pattern retain under clamped beam 13 and cantilever beam 14 with a thickness of 2mm The polyimides of side is as sacrificial layer;
11) photoresist is coated, photoetching removes cantilever beam 14, clamped beam 13, anchoring area 11, co-planar waveguide 10, asymmetric coplanar With line 17, capacitance top crown 19, pull-down electrode 28 and output electrode 20 photoresist;
12) seed layer for evaporating 500/1500/300A ° of Ti/Au/Ti, removes one thickness of re-plating after the Ti layer at top Degree is the Au layer of 2mm;
13) photoresist and Au are removed, cantilever beam 14, clamped beam 13, anchoring area 11, co-planar waveguide 10, asymmetric total is formed Face band line 17, capacitance top crown 19, pull-down electrode 28 and output electrode 20;
14) deep reaction ion etching (DRIE) the substrate material back side makes membrane structure 26;
15) discharge polyimide sacrificial layer: developer solution impregnates, and removes the polyimide sacrificial layer under clamped beam, deionization Water impregnates slightly, dehydrated alcohol dehydration, volatilizees, dries under room temperature.
Difference with the prior art of the present invention is:
Present invention employs novel six ports clamped beam coupled structures, wherein the first end of six port clamped beam couplers The power of mouth 1-1 to third port 1-3, the 4th port 1-4 and first port 1-1 to fifth port 1-5, the 6th port 1-6 The degree of coupling is identical;This clamped beam coupled structure is coupled out the signal of fraction from the microwave signal of coplanar wave guide transmission to examine The frequency and phase size of microwave signal are surveyed, and most of signal can be input in next stage processing circuit;Using Wilkinson power combiner and power divider realize power combing and distribution to microwave signal;Using direct-heating type Microwave power detector detects the microwave power of signal, sensitivity with higher and without DC power;Of the invention is clamped Beam directly heats online unknown frequency microwave phase detector device, realizes and examines online to 0-360 ° of phase of unknown frequency signal It surveys.
The structure for meeting conditions above is considered as clamped beam of the invention and directly heats online unknown frequency microwave phase Detector.

Claims (3)

1. a kind of clamped beam directly heats online unknown frequency microwave phase detector device, it is characterised in that the phase detectors by Six port clamped beam couplers (1), channel selection switch (2), microwave frequency detector (3), microwave phase detector device (4), the One direct heated microwave power sensor (5-1) and the cascade of the second direct-heating type microwave power detector (5-2) are constituted;Its In, the first port (1-1) of six port clamped beam couplers (1) arrives third port (1-3), the 4th port (1-4) and first The power degree of coupling difference of port (1-1) to fifth port (1-5), the 6th port (1-6) is identical, and measured signal is through first port (1-1) input, is output to junior's processing circuit by second port (1-2), defeated by the 4th port (1-4) and the 6th port (1-6) The first Wilkinson power combiner (6-1) and the 2nd Wilkinson power combiner of microwave phase detector device (4) are arrived out (6-2), and is output to by the first Wilkinson power combiner (6-1) and the 2nd Wilkinson power combiner (6-2) Three direct-heating type microwave power detectors (5-3) and the 4th direct-heating type microwave power detector (5-4), reference signal warp Wilkinson power divider (7) is divided into two-way power and the identical signal of phase, respectively with the 4th port (1-4) and the 6th The two-way measured signal of port (1-6) is through the first Wilkinson power combiner (6-1) and the 2nd Wilkinson power combing Device (6-2) carries out power combing;Channel selection switch (2) are output to by third port (1-3) and fifth port (1-5);Channel The 7th port (2-1) and the 8th port (2-2) of selection switch (2) connect the first direct-heating type microwave power detector respectively (5-1) and the second direct-heating type microwave power detector (5-2), the 9th port (2-3) of channel selection switch (2) and the tenth Port (2-4) connects the 3rd Wilkinson power combiner (6-3) of microwave frequency detector (3), and by the 3rd Wilkinson Power combiner (6-3) is output to the 5th direct-heating type microwave power detector (5-5) and realizes to unknown frequency signal The on-line checking of frequency;
Wherein the structure of six port clamped beam couplers (1) is symmetrical set with its center line, by co-planar waveguide (10), medium Layer (12), air layer (15) and across clamped beam above it (13) constitute;Co-planar waveguide (10) is produced on SiO2On layer (9), Anchoring area (11) is produced on co-planar waveguide (10), the lower section metallization medium layer (12) of clamped beam (13), and with air layer (15), solid Strutbeam (13) collectively forms coupled capacitor structure, and co-planar waveguide (10) length between two clamped beams (13) is λ/4.
2. clamped beam as described in claim 1 directly heats online unknown frequency microwave phase detector device, feature exists In channel selection switch (2) by co-planar waveguide (10), anchoring area (11), dielectric layer (12), cantilever beam (14), pull-down electrode (26) structure At;For anchoring area (11) on co-planar waveguide (10), the lower section of cantilever beam (14) makes pull-down electrode (26), and with pull-down electrode (26) Upper dielectric layer (12) collectively forms construction of switch;The cantilever beam (14) of channel selection switch (2) is grounded, and pull-down electrode (26) connects Driving voltage;When driving voltage is more than or equal to cut-in voltage, cantilever beam (14) is pulled down into, and channel is strobed.
3. clamped beam as described in claim 1 directly heats online unknown frequency microwave phase detector device, it is characterised in that Direct-heating type microwave power detector is by Si substrate (8), SiO2Layer (9), co-planar waveguide (10), semiconductor arm (21), metal Arm (22), terminal resistance (27) are constituted;Microwave power is inputted from port 1, is input to terminal resistance by co-planar waveguide (10) (27) it is converted to heat;Semiconductor arm (21) and metal arm (22) constitute thermocouple and pass through measurement according to Seebeck effect Microwave power size is inputted known to the thermoelectrical potential of output electrode (20).
CN201710052664.6A 2017-01-24 2017-01-24 Clamped beam directly heats online unknown frequency microwave phase detector device Active CN106841789B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710052664.6A CN106841789B (en) 2017-01-24 2017-01-24 Clamped beam directly heats online unknown frequency microwave phase detector device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710052664.6A CN106841789B (en) 2017-01-24 2017-01-24 Clamped beam directly heats online unknown frequency microwave phase detector device

Publications (2)

Publication Number Publication Date
CN106841789A CN106841789A (en) 2017-06-13
CN106841789B true CN106841789B (en) 2019-04-26

Family

ID=59120398

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710052664.6A Active CN106841789B (en) 2017-01-24 2017-01-24 Clamped beam directly heats online unknown frequency microwave phase detector device

Country Status (1)

Country Link
CN (1) CN106841789B (en)

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004325162A (en) * 2003-04-23 2004-11-18 Mitsubishi Heavy Ind Ltd Phase measuring apparatus and cosmic solar generation system
CN101034122A (en) * 2007-03-30 2007-09-12 东南大学 Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor
WO2007101916A1 (en) * 2006-03-09 2007-09-13 Valtion Teknillinen Tutkimuskeskus Device and method for measuring electrical power
CN101332971A (en) * 2008-07-29 2008-12-31 东南大学 Passing type microwave power detector based on microelectronic mechanical cantilever beam and manufacturing method
CN101788605A (en) * 2010-02-01 2010-07-28 东南大学 Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof
CN103018559A (en) * 2012-12-26 2013-04-03 东南大学 Device and method for phase detection based on indirect type micromechanical microwave power sensor
CN103048540A (en) * 2013-01-18 2013-04-17 东南大学 Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor
CN103278681A (en) * 2013-05-20 2013-09-04 东南大学 Microwave power sensor with multi-cantilever structure
CN103344831A (en) * 2013-06-19 2013-10-09 东南大学 Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof
CN104614584A (en) * 2015-01-15 2015-05-13 南京邮电大学 Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof
CN104655921A (en) * 2015-02-16 2015-05-27 南京邮电大学 Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system
CN104950172A (en) * 2015-07-01 2015-09-30 东南大学 GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004325162A (en) * 2003-04-23 2004-11-18 Mitsubishi Heavy Ind Ltd Phase measuring apparatus and cosmic solar generation system
WO2007101916A1 (en) * 2006-03-09 2007-09-13 Valtion Teknillinen Tutkimuskeskus Device and method for measuring electrical power
CN101034122A (en) * 2007-03-30 2007-09-12 东南大学 Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor
CN101332971A (en) * 2008-07-29 2008-12-31 东南大学 Passing type microwave power detector based on microelectronic mechanical cantilever beam and manufacturing method
CN101788605A (en) * 2010-02-01 2010-07-28 东南大学 Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof
CN103018559A (en) * 2012-12-26 2013-04-03 东南大学 Device and method for phase detection based on indirect type micromechanical microwave power sensor
CN103048540A (en) * 2013-01-18 2013-04-17 东南大学 Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor
CN103278681A (en) * 2013-05-20 2013-09-04 东南大学 Microwave power sensor with multi-cantilever structure
CN103344831A (en) * 2013-06-19 2013-10-09 东南大学 Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof
CN104614584A (en) * 2015-01-15 2015-05-13 南京邮电大学 Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof
CN104655921A (en) * 2015-02-16 2015-05-27 南京邮电大学 Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system
CN104950172A (en) * 2015-07-01 2015-09-30 东南大学 GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Fabrication of the Different Microwave Power Sensor by Seesaw-Type MEMS Membrane;Zhenxiang Yi 等;《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》;20160831;第25卷(第4期);正文第582-584页
High dynamic range microwave power sensor with thermopile and curled cantilever beam;Jiabin Yan等;《ELECTRONICS LETTERS》;20150820;第51卷(第17期);正文第1341-1343页
基于MEMS技术的差分式微波信号相位检测器;焦永昌 等;《东南大学学报》;20090131;第39卷(第1期);正文第142-145页

Also Published As

Publication number Publication date
CN106841789A (en) 2017-06-13

Similar Documents

Publication Publication Date Title
CN106841789B (en) Clamped beam directly heats online unknown frequency microwave phase detector device
CN106645920B (en) Clamped beam T junction indirect heating type microwave signal detector
CN108279405A (en) Adaption radar ratio method cantilever beam micro-nano microwave detects and demodulation monolithic system
CN106841787B (en) Clamped beam T junction directly heats online unknown frequency microwave phase detector device
CN106841796B (en) The online unknown frequency microwave phase detector device of clamped beam indirect heating
CN106841771B (en) Clamped beam T junction direct-heating type microwave signal detector
CN106814259B (en) Clamped beam direct-heating type microwave signal detector
CN106841782B (en) Silicon substrate cantilever beam couples direct-heating type unknown frequency millimeter wave phase detectors
CN106841785B (en) Clamped beam directly heats online given frequency microwave phase detector device
CN106872780B (en) The online unknown frequency microwave phase detector device of clamped beam T junction indirect heating
CN106841794B (en) Clamped beam T junction directly heats online given frequency microwave phase detector device
CN106711164B (en) Clamped beam indirect heating type microwave signal detector
CN106771558B (en) Clamped beam direct-heating type microwave signal detector device
CN106841793B (en) The online given frequency microwave phase detector device of clamped beam indirect heating
CN106841790B (en) Clamped beam T junction direct-heating type microwave signal detector device
CN106872797B (en) Clamped beam T junction indirect heating type microwave signal detector device
CN106872767B (en) Clamped beam indirect heating type microwave signal detector device
CN108594176A (en) The direct micro-nano microwave of ratio method cantilever beam detects demodulating system in adaption radar
CN108508410A (en) The direct micro-nano microwave of ratio method slot-coupled detects demodulating system in adaption radar
CN106771601B (en) Silicon substrate cantilever beam T junction direct-heating type unknown frequency millimeter wave phase detectors
CN106841788B (en) The online given frequency microwave phase detector device of clamped beam T junction indirect heating
CN106841781B (en) Online millimeter wave phase detectors are directly heated based on silicon substrate cantilever beam T junction
CN106814251B (en) The coupling of silicon-base micro-mechanical cantilever beam directly heats online millimeter wave phase detectors
CN106841783B (en) Silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter wave phase detectors
CN107064617B (en) Silicon substrate cantilever beam couples indirect heating type unknown frequency millimeter wave phase detectors

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant