CN107064617B - Silicon substrate cantilever beam couples indirect heating type unknown frequency millimeter wave phase detectors - Google Patents
Silicon substrate cantilever beam couples indirect heating type unknown frequency millimeter wave phase detectors Download PDFInfo
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- CN107064617B CN107064617B CN201710052622.2A CN201710052622A CN107064617B CN 107064617 B CN107064617 B CN 107064617B CN 201710052622 A CN201710052622 A CN 201710052622A CN 107064617 B CN107064617 B CN 107064617B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
Abstract
Silicon substrate cantilever beam of the invention couples indirect heating type unknown frequency millimeter wave phase detectors, and structure is made of cantilever beam coupled structure, power divider/synthesizer, indirect heating type microwave power detector and switch.Cantilever beam coupled structure is symmetrical up and down, including two groups of cantilever beams, and every group of cantilever beam is made of two symmetrical cantilever beams, and the electrical length of CPW transmission line is λ/4 at centre frequency 35GHz between two cantilever beams.For the detection for realizing unknown frequency millimeter wave phase, first progress frequency detecting, frequency detecting is realized by the synthesis power for measuring the two-way coupled signal that phase difference is 90 degree at centre frequency 35GHz using indirect heating type microwave power detector；Phase-detection is synthesized with the reference signal after two-way equal part respectively by the coupled signal for being 90 degree by two-way phase difference, synthesis power is detected also with indirect heating type microwave power detector, to obtain the phase of measured signal.
Description
Technical field
The invention proposes a kind of silicon substrate cantilever beams to couple indirect heating type unknown frequency millimeter wave phase detectors, belongs to
Microelectromechanical systems (MEMS) technical field.
Background technique
In microwave technical field, phase is to characterize an important parameter of microwave signal, microwave signal phase detection system
System phase-modulator, phase-shift keying (PSK) (PSK), microwave positioning, the test of antenna phase pattern and in terms of all
Have and is extremely widely applied.There are mainly two types of the methods of microwave signal phase detection: signal decomposition method and vector synthesis.Arrow
Synthetic method is measured compared with signal decomposition method, has many advantages, such as that structural principle is simple, working band is wide, passive detection, while is easily logical
It is realized after mature MEMS technology, realizes the miniaturization of microwave signal detection system and integrated.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of silicon substrate cantilever beams to couple indirect heating type unknown frequency millimeter wave
Phase detectors carry out frequency detecting and phase-detection using cantilever beam coupled structure coupling unit measured signal respectively, realize
The online detection of unknown frequency millimeter-wave signal, has the advantages that structure is simple.
Technical solution: in order to solve the above technical problems, the invention proposes a kind of silicon substrate cantilever beams to couple indirect heating type
Unknown frequency millimeter wave phase detectors.The phase detectors by cantilever beam coupled structure, power combiner/distributor, indirectly
Heated microwave power sensor and switch are constituted；Wherein, cantilever beam coupled structure up and down, bilateral symmetry, by CPW central signal
Line, transmission line ground wire, cantilever beam, cantilever beam anchoring area are constituted, and cantilever beam is placed in the top of CPW central signal line, in cantilever beam
There is one layer of Si in lower section3N4Dielectric layer covers central signal line；Measured signal is inputted by the first port of cantilever beam coupled structure, from
Second port is output to junior's circuit；The signal of two cantilever beams in top coupling is exported by third port and the 4th port, third
Port is connected with the 7th port of first switch, and the 4th port is connected with the tenth port of second switch, and the 8th of first switch the
Port is connected with the first indirect heating type microwave power detector, the 13rd port phase of the 9th port and the first power combiner
Even, the tenth Single port of second switch is connected with the second indirect heating type microwave power detector, the tenth Two-port netwerk and the first function
14th port of rate synthesizer is connected, and the 15th port of the first power combiner connects third indirect heating type microwave power biography
Sensor；The signal of two cantilever beams in lower section coupling is exported by fifth port and the 6th port, fifth port and the second power combing
19th port of device is connected, and the 6th port is connected with the 20th Two-port netwerk of third power combiner, and measured signal is from power
16th port of distributor inputs, the 17th port of power divider and the 20th port phase of the second power combiner
Even, the 18th port is connected with the 23rd port of third power combiner, the 20th Single port of the second power combiner
The 4th indirect heating type microwave power detector is connect, the 24th port of third power combiner connects the 5th indirect heating and declines
Wave power sensor.
Power divider in power combiner/distributor is identical with power combiner configurations, by CPW central signal line,
Transmission line ground wire, ACPS signal wire, MIM capacitor and isolation resistance are constituted, and MIM capacitor is between transmission line ground wire, ACPS signal
Line uses bending structure, and for reducing chip area, its electrical length is 1/8th wavelength at centre frequency 35GHz.
When carrying out millimeter-wave frequency and phase-detection, coupled signal is input to first by first switch first and is added indirectly
Hot type microwave power detector and the second indirect heating type microwave power detector, measure the watt level of coupled signal, then
It is input to the first power combiner by switching the coupled signal that phase difference is 90 degree at centre frequency 35GHz by two-way, is made
Composite signal watt level is detected with third indirect heating type microwave power detector, by the size of coupled signal and composite signal
The frequency of millimeter-wave signal can be extrapolated；In addition the coupled signal that phase difference is 90 degree at two-way centre frequency 35GHz is distinguished
It is synthesized with the reference signal after power equal part, by the 4th indirect heating type microwave power detector and the 5th indirect heating type micro-wave
Power sensor detects the size of two-way composite signal power, and simultaneous equations can solve the phase of millimeter-wave signal to be measured,
Unknown frequency millimeter wave can be achieved in the measurement of whole cycle range internal phase angle.
The utility model has the advantages that the present invention has the advantage that relative to existing phase detectors
1. phase detectors of the invention use cantilever beam coupled modes, online phase-detection can be realized, it is to be measured
Signal can continue to output next stage use after tested；
2. phase detectors principle of the invention and structure are simple, chip area is smaller, all by the passive device group origin cause of formation
DC power may be not present；
3. compatible with COM S technique, suitable for mass production, at low cost, high reliablity.
Detailed description of the invention
Fig. 1 is the structural representation that silicon substrate cantilever beam of the present invention couples indirect heating type unknown frequency millimeter wave phase detectors
Figure；
Fig. 2 be cantilever beam coupled structure of the present invention A-A ' to sectional view；
Fig. 3 is the top view of power divider/synthesizer of the present invention；
Fig. 4 is the top view of indirect heating type microwave power detector of the present invention；
Fig. 5 be indirect heating type microwave power detector of the present invention B-B ' to sectional view；
Fig. 6 is the top view that the present invention switchs；
Fig. 7 be the C-C ' that switchs of the present invention to sectional view；
It include: high resistant Si substrate 1, SiO in figure2Layer 2, CPW central signal line 3, transmission line ground wire 4, cantilever beam 5, cantilever
Beam anchoring area 6, ACPS signal wire 7, MIM capacitor 8, isolation resistance 9, terminal resistance 10, P-type semiconductor arm 11, N-type semiconductor arm
12, thermoelectric pile metal interconnecting wires 13 export Pad14, Si3N4Dielectric layer 15, pull-down electrode 16, cantilever beam coupled structure 17, first
Switch 18, second switch 19, first port 1-1, second port 1-2, third port 1-3, the 4th port 1-4, fifth port 1-
5, the 6th port 1-6, the 7th port 2-1, the 8th port 2-2, the 9th port 2-3, the tenth port 3-1, the tenth Single port 3-2,
Tenth Two-port netwerk 3-3, the 13rd port 4-1, the 14th port 4-2, the 15th port 4-3, the 16th port 5-1, the 17th
Port 5-2, the 18th port 5-3, the 19th port 6-1, the 20th port 6-2, the 20th Single port 6-3, the 22nd end
Mouth 7-1, the 23rd port 7-2, the 24th port 7-3.
Specific embodiment
The following further describes the specific embodiments of the present invention with reference to the drawings.
Referring to Fig. 1-7, the invention proposes a kind of silicon substrate cantilever beams to couple indirect heating type millimeter wave phase detectors.It is main
It include: cantilever beam coupled structure 17, power divider/synthesizer, indirect heating type microwave power detector and switch.Wherein,
Cantilever beam coupled structure 17 is used to couple the Partial Power of measured signal, is used for phase-detection；Power combiner is believed for two-way
Number synthesis, power divider will be for will be divided into two paths of signals, the two structure having the same by signal all the way；Indirect heating type
Microwave power detector is used to detect the power of millimeter-wave signal, and principle is based on Joule effect and Seebeck effect；Switch is used
In the detection of conversion coupled power and frequency detecting two states.
Cantilever beam coupled structure 17 is made of CPW central signal line 3, transmission line ground wire 4, cantilever beam 5, cantilever beam anchoring area 6,
Up and down, bilateral symmetry.Two groups of cantilever beams 5 are suspended from 3 top of CPW central signal line, and centre is separated with Si3N4Dielectric layer 15 and air, etc.
The MIM capacitor of a dual dielectric layer is imitated, 5 end of cantilever beam is by cantilever beam anchoring area 6 with the CPW central signal line 3 of coupling branch
It is connected, every group of cantilever beam 5 includes the cantilever beam 5 of two symmetric designs, and the CPW transmission line electrical length between two groups of cantilever beams 5 exists
It is λ/4 at centre frequency 35GHz.By adjusting the shape of the transmission line ground wire 4 near cantilever beam 5, change the resistance of CPW transmission line
It is anti-, for compensating the introducing bring capacitance variations of cantilever beam 5.
Power divider/synthesizer by CPW central signal line 3, transmission line ground wire 4, ACPS signal wire 7, MIM capacitor 8 and every
It is constituted from resistance 9.The characteristic impedance of CPW transmission line is 50 Ω, and the characteristic impedance of ACPS transmission line is 70.7 Ω, electrical length be λ/
8, the resistance value of isolation resistance is 100 Ω.MIM capacitor 8 is across between two ground wires, is located at 3 top of CPW central signal line, is situated between
Electric layer is one layer of Si3N4.Transmission line uses bending structure, while being compensated in corner, for reducing chip area.
Indirect heating type microwave power detector is by CPW central signal line 3, transmission line ground wire 4, terminal resistance 10, p-type half
Conductor arm 11, N-type semiconductor arm 12, thermoelectric pile metal interconnecting wires 13, output Pad14 are constituted.In terminal resistance 10 and thermoelectric pile
Lower section, high resistant Si substrate 1 is etched to form SiO2Membrane structure, for increasing the output sensitivity of thermoelectric pile.Millimeter wave letter
Number being transferred to terminal resistance 10 by CPW dissipates as heat, and certain Temperature Distribution is formed on film, cold and hot due to thermoelectric pile
There are certain temperature differences at both ends, and the thermoelectrical potential of temperature difference is proportional to based on Seebeck effect output.
Switch is made of CPW central signal line 3, transmission line ground wire 4, cantilever beam 5, cantilever beam anchoring area 6 and pull-down electrode 16,
One layer of Si is covered in pull-down electrode 163N4Dielectric layer 15, when not applying DC voltage, two branches are in an off state, and are passed through
Apply certain direct current biasing in pull-down electrode 16, it can be achieved that corresponding to the conducting of branch, further realizes coupled power detection
With the conversion of frequency detecting two states.
Millimeter-wave signal to be measured is inputted from the first port 1-1 of cantilever beam coupled structure 17, by CPW transmission line, by the
Two-port netwerk 1-2 enters next stage.The meeting coupling unit power of cantilever beam 5 above CPW central signal line 3, due in every group
Two 5 symmetric designs of cantilever beam, so the microwave power of coupling is equal.The coupling of third port 1-3 and the 4th port 1-4 output
Signal, centre frequency f0Phase difference is 90 degree at=35GHz, and phase difference may be expressed as: when frequency f
Two-way coupled signal can respectively indicate are as follows:
Wherein, a1And a2The respectively amplitude of two-way coupled signal, ω are the angular frequency of input signal,For initial phase,
By switching so that coupled signal is input to indirect heating type microwave power detector, available a1And a2Size.Synthesis letter
Number power may be expressed as:
For the power P for obtaining composite signal, by first switch 18 and second switch 19 two-way coupled signal is inputted
Power detection is carried out to the first power combiner, and by third indirect heating type microwave power detector.By (1) and (4) formula, letter
Number frequency and the relationship of output power can indicate are as follows:
It, can be by the first indirect heating type microwave power detector, the second indirect heating type microwave power according to above formula relationship
The output of sensor and third indirect heating type microwave power detector obtains the frequency of millimeter-wave signal to be measured.
When carrying out phase-detection, in addition the coupled signal of fifth port 1-5 and the 6th port 1-6 output is respectively with power etc.
Reference signal after point synthesizes, and the reference signal after power equal part can indicate are as follows:
v3=a3 cos(ωt+φ) (6)
Then the watt level of composite signal is respectively as follows:
P1And P2Size respectively by the 4th indirect heating type microwave power detector and the 5th indirect heating type microwave power
Sensor is detected, and according to the relationship of measured signal phase and the size of composite signal power shown in (7) and (8), is only existed
One unknown quantity, by the phase of the available millimeter-wave signal to be measured of the output thermoelectrical potential of indirect heating type microwave power detector
Position, it can be achieved that unknown frequency millimeter wave whole cycle range internal phase angle measurement.
The realization structure of silicon substrate cantilever beam coupling indirect heating type unknown frequency millimeter wave phase detectors of the invention
The preparation method is as follows:
1) prepare 4 inches of high resistant Si substrates 1, resistivity is 4000 Ω cm, with a thickness of 400 μm；
2) thermally grown one layer of SiO2Layer 2, with a thickness of 1.2 μm；
3) chemical vapor deposition (CVD) grows one layer of polysilicon, with a thickness of 0.4 μm；
4) one layer photoresist of coating and photoetching, in addition to the exposure of polysilicon resistance region, other regions are photo-etched glue protection,
It is then poured into phosphorus (P) ion, doping concentration 1015 cm-2, form isolation resistance 9 and terminal resistance 10；
5) layer photoresist is coated, P is used+Photolithography plate carries out photoetching, in addition to the exposure of P-type semiconductor arm region, other areas
Domain is photo-etched glue protection, is then poured into boron (B) ion, doping concentration 1016 cm-2, form the P-type semiconductor arm of thermocouple
11；
6) layer photoresist is coated, N is used+Photolithography plate carries out photoetching, in addition to the exposure of N-type semiconductor arm region, other areas
Domain is photo-etched glue protection, is then poured into phosphorus (P) ion, doping concentration 1016 cm-2, form the N-type semiconductor arm of thermocouple
12；
7) layer photoresist, photoetching thermoelectric pile arm and polysilicon resistance figure are coated, then thermoelectricity is formed by dry etching
Even arm and polysilicon resistance；
8) layer photoresist is coated, photoetching removes transmission line, thermoelectric pile metal interconnecting wires 13, pull-down electrode 16 and output
Photoresist at Pad14；
9) electron beam evaporation forms first layer gold (Au), with a thickness of 0.3 μm, removes the Au on photoresist and photoresist,
Removing forms first layer Au, thermoelectric pile metal interconnecting wires 13, pull-down electrode 16 and the output Pad14 of transmission line；
10) LPCVD deposits one layer of Si3N4, with a thickness of 0.1 μm；
11) layer photoresist, photoetching and the photoresist for retaining 5 lower section of MIM capacitor 8 and cantilever beam, dry etching are coated
Si3N4, form Si3N4Dielectric layer 15；
12) a strata acid imide and litho pattern are uniformly coated, with a thickness of 2 μm, retains the polyimides of 5 lower section of cantilever beam
As sacrificial layer；
13) photoresist is coated, photoetching removes cantilever beam 5, cantilever beam anchoring area 6, transmission line, MIM capacitor 8 and output
The photoresist of the position Pad14；
14) seed layer for evaporating 500/1500/300A ° of Ti/Au/Ti, removes one thickness of re-plating after the Ti layer at top
The Au layer that degree is 2 μm；
15) Au on photoresist and photoresist is removed, cantilever beam 5, cantilever beam anchoring area 6, transmission line, MIM capacitor 8 are formed
With output Pad14；
16) deep reaction ion etching (DRIE) the substrate material back side makes the membrane structure below thermoelectric pile；
17) discharge polyimide sacrificial layer: developer solution impregnates, and removes the polyimide sacrificial layer under cantilever beam 5, deionization
Water impregnates slightly, dehydrated alcohol dehydration, volatilizees, dries under room temperature.
Distinguish whether be the structure standard it is as follows:
Silicon substrate cantilever beam of the invention couples indirect heating type unknown frequency millimeter wave phase detectors, millimeter wave letter to be measured
Number by cantilever beam coupled structure 17 first port 1-1 input, exported by second port 1-2, be located at CPW central signal line 3 on
Two groups of 5 coupling unit of cantilever beam millimeter-wave signals to be measured of side, cantilever beam 5 of the every group of cantilever beam 5 including two symmetric designs, two
The power that a cantilever beam 5 couples is equal, and the coupled signal of one of cantilever beam 5 is used for coupled power and frequency detecting, and two kinds
State conversion realizes that the coupled signal of another cantilever beam 5 is used for phase-detection by switch；First by switch so that coupling
Signal is directly inputted to indirect heating type microwave power detector detection coupled power size, then by switch so that two-way exists
The coupled signal that phase difference is 90 degree at centre frequency 35GHz synthesize and detected by indirect heating type microwave power detector
Power is synthesized, to extrapolate the frequency of measured signal；When phase-detection, by two-way, phase difference is at centre frequency 35GHz
90 degree of coupled signal senses respectively with the reference signal synthesis after two-way equal part also with indirect heating type microwave power
Device detection synthesis power, to obtain the phase of measured signal.
The structure for meeting conditions above is considered as silicon substrate cantilever beam coupling indirect heating type unknown frequency millimeter of the invention
Wave phase detector.
Claims (2)
1. a kind of silicon substrate cantilever beam couples indirect heating type unknown frequency millimeter wave phase detectors, it is characterized in that: the phase is examined
Device is surveyed by cantilever beam coupled structure (17), power combiner/distributor, indirect heating type microwave power detector and switch structure
At；Wherein, cantilever beam coupled structure (17) up and down, bilateral symmetry, by CPW central signal line (3), transmission line ground wire (4), cantilever
Beam (5), cantilever beam anchoring area (6) are constituted, and cantilever beam (5) is placed in the top of CPW central signal line (3), in the lower section of cantilever beam (5)
There is one layer of Si3N4Dielectric layer (15) covers CPW central signal line (3)；Measured signal by cantilever beam coupled structure (17) first end
Mouth (1-1) input, is output to junior's circuit from second port (1-2)；The signal of two cantilever beams (5) in top coupling is by third end
Mouth (1-3) and the output of the 4th port (1-4), third port (1-3) are connected with the 7th port (2-1) of first switch (18), the
Four ports (1-4) are connected with the tenth port (3-1) of second switch (19), the 8th port (2-2) of first switch (18) and the
One indirect heating type microwave power detector is connected, the 9th port (2-3) and the first power combiner of first switch (18)
13rd port (4-1) is connected, and the tenth Single port (3-2) and the second indirect heating type microwave power of second switch (19) sense
Device is connected, and the tenth Two-port netwerk (3-3) of second switch (19) is connected with the 14th port (4-2) of the first power combiner, most
Afterwards, the 15th port (4-3) of the first power combiner connects third indirect heating type microwave power detector；The cantilever of lower section two
The signal of beam (5) coupling is exported by fifth port (1-5) and the 6th port (1-6), fifth port (1-5) and the second power combing
19th port (6-1) of device is connected, and the 6th port (1-6) is connected with the 20th Two-port netwerk (7-1) of third power combiner,
Reference signal is inputted from the 16th port (5-1) of power divider, the 17th port (5-2) of power divider and the second function
20th port (6-2) of rate synthesizer is connected, the 23rd port of the 18th port (5-3) and third power combiner
(7-2) is connected, and the 20th Single port (6-3) of the second power combiner connects the 4th indirect heating type microwave power detector, the
24th port (7-3) of three power combiners connects the 5th indirect heating type microwave power detector.
2. silicon substrate cantilever beam according to claim 1 couples indirect heating type unknown frequency millimeter wave phase detectors,
Be characterized in: the power divider in power combiner/distributor is identical with power combiner configurations, by CPW central signal line
(3), transmission line ground wire (4), ACPS signal wire (7), MIM capacitor (8) and isolation resistance (9) are constituted, and MIM capacitor (8) is being transmitted
Between line ground wire (4), ACPS signal wire (7) uses bending structure, for reducing chip area, its electricity at centre frequency 35GHz
Length is 1/8th wavelength.
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