CN106841787B - Clamped beam T junction directly heats online unknown frequency microwave phase detector device - Google Patents

Clamped beam T junction directly heats online unknown frequency microwave phase detector device Download PDF

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CN106841787B
CN106841787B CN201710052657.6A CN201710052657A CN106841787B CN 106841787 B CN106841787 B CN 106841787B CN 201710052657 A CN201710052657 A CN 201710052657A CN 106841787 B CN106841787 B CN 106841787B
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CN106841787A (en
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廖小平
闫浩
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Southeast University
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R25/00Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R21/00Arrangements for measuring electric power or power factor
    • G01R21/02Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R23/00Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
    • G01R23/02Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Measurement Of Resistance Or Impedance (AREA)

Abstract

Clamped beam T junction of the invention directly heats online unknown frequency microwave phase detector device by six port clamped beam couplers, channel selection switch, microwave frequency detector, microwave phase detector device, the cascade of direct-heating type microwave power detector is constituted, and the co-planar waveguide length between two clamped beams is λ/4;The first port of six port clamped beam couplers is identical to third port, the 4th port and first port to fifth port, the power degree of coupling of the 6th port difference, measured signal is inputted through first port, and junior's processing circuit is output to by second port, microwave phase detector device is output to by the 4th port and the 6th port, channel selection switch is output to by third port and fifth port;7th port of channel selection switch and the 8th port connect direct-heating type microwave power detector, and the 9th port of channel selection switch and the tenth port connect microwave frequency detector;Finally realize the 0-360 ° of phase on-line checking to unknown frequency signal.

Description

Clamped beam T junction directly heats online unknown frequency microwave phase detector device
Technical field
The invention proposes clamped beam T junctions to directly heat online unknown frequency microwave phase detector device, belongs to micro- electricity The technical field of sub- mechanical system.
Background technique
The phase-detection of microwave signal is in phase-modulator, phase-shift keying (PSK) (PSK), phaselocked loop (PLL), antenna phase direction The test of figure, the phase characteristic for measuring various microwave devices etc. etc., which have, to be extremely widely applied.Therefore in microwave frequency band Grasp and control signal phase be it is necessary, the phase of microwave signal is also just at an important measurement parameter.This Invention is to directly heat online unknown frequency based on a kind of clamped beam T junction for realizing online phase-detection of Si technological design Rate microwave phase detector device.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of clamped beam T junctions to directly heat online unknown frequency microwave Phase detectors couple fraction signal using six port clamped beam couplers and carry out frequency detecting and phase-detection, and big Partial detection signals can be input in next stage processing circuit, and 0-360 ° of phase of unknown frequency signal is examined in realization online It surveys, and the benefit with low-power consumption.
Technical solution: clamped beam T junction of the invention directly heats online unknown frequency microwave phase detector device by six Port clamped beam coupler, channel selection switch, microwave frequency detector, microwave phase detector device directly heat type micro-wave function Rate sensor composition;
The first port of six port clamped beam couplers is to third port, the 4th port and first port to the 5th end Mouth, the power degree of coupling of the 6th port are identical, and measured signal is inputted through first port, are output to junior's processing electricity by second port Road is output to the first T junction power combiner and the second T junction function of microwave phase detector device by the 4th port and the 6th port Rate synthesizer, and by the first T junction power combiner and the second T junction power combiner, it is respectively outputted to directly be added by third Hot type microwave function sensor and the 4th directly heats type micro-wave function sensor;Third port and fifth port are output to channel selecting Switch, the 7th port of channel selection switch and the 8th port connect the first direct-heating type microwave power detector and second directly Heated microwave power sensor, the 9th port of channel selection switch and the tenth port meet the 3rd T of microwave frequency detector Type knot power combiner, and by third T junction power combiner connect the 5th and directly heat type micro-wave function sensor and realize to not Know the phase on-line checking of frequency signal.
Wherein, the structure of six port clamped beam couplers is symmetrical set with its center line by co-planar waveguide, dielectric layer, Air layer and across clamped beam above it constitute;Co-planar waveguide is produced on SiO2On layer, anchoring area is produced on co-planar waveguide, Gu The lower section metallization medium layer of strutbeam, and coupled capacitor structure, being total between two clamped beams are collectively formed with air layer, clamped beam Face waveguide length is λ/4;
The utility model has the advantages that
1) clamped beam T junction of the invention directly heats online unknown frequency microwave phase detector device for microwave signal Phase, frequency are surveyed module and are integrated together, and fraction signal is coupled using six port clamped beam couplers and carries out frequency detecting And phase-detection, and most of signal can be input in next stage processing circuit, realize 0-360 ° to unknown frequency signal Phase on-line checking.
2) clamped beam T junction of the invention directly heats online unknown frequency microwave phase detector device use and directly heats Type micro-wave power sensor detects the power of microwave signal, sensitivity with higher and without DC power;
3) it is real using T junction to directly heat online unknown frequency microwave phase detector device to clamped beam T junction of the invention Now to the power combing of microwave signal and distribution, the processing pair of isolation resistance in traditional Wilkinson power divider is avoided The influence of microwave property;
4) the microwave phase detector module in the present invention uses two T junction power combiners, a T junction power distribution Device and two direct-heating type microwave power detectors realize 0-360 ° of phase-detection.
Detailed description of the invention
Fig. 1 is that clamped beam T junction of the present invention directly heats online unknown frequency microwave phase detector device functional block diagram,
Fig. 2 is the top view of six port clamped beam couplers,
Fig. 3 is AA ' the directional profile figure of six port clamped beam coupler of Fig. 2,
Fig. 4 is the top view of channel selection switch,
Fig. 5 is AA ' the directional profile figure of Fig. 4 channel selection switch,
Fig. 6 is the top view of T junction power divider/synthesizer,
Fig. 7 is the top view of direct-heating type microwave power detector,
Fig. 8 is AA ' the directional profile figure of Fig. 7 direct-heating type microwave power detector,
Fig. 9 is BB ' the directional profile figure of Fig. 7 direct-heating type microwave power detector.
It include: six port clamped beam couplers 1, channel selection switch 2, microwave frequency detector 3, microwave phase inspection in figure Survey device 4, the first direct-heating type microwave power detector 5-1, the second direct-heating type microwave power detector 5-2, third is straight Heated microwave power sensor 5-3 is met, the 4th direct-heating type microwave power detector 5-4, the 5th directly heats type micro-wave Power sensor 5-5, the first T junction power combiner 6-1, the second T junction power combiner 6-2, T junction power divider 7, Si substrate 8, SiO2Layer 9, co-planar waveguide 10, anchoring area 11, dielectric layer 12, clamped beam 13, cantilever beam 14, air layer 15, air bridges 16, capacitance top crown 17, output electrode 18, semiconductor arm 19, metal arm 20, hot end 21, cold end 22, pole under capacitance Plate 23, substrate film structure 24, terminal resistance 25, pull-down electrode 26, first port 1-1, second port 1-2, third port 1- 3, the 4th port 1-4, fifth port 1-5, the 6th port 1-6, the 7th port 2-1, the 8th port 2-2, the 9th port 2-3, the Ten port 2-4, the tenth Single port 7-1, the tenth Two-port netwerk 7-2, the 13rd port 7-3.
Specific embodiment
Clamped beam T junction of the present invention directly heats online unknown frequency microwave phase detector device by six port clamped beam couplings Clutch 1, channel selection switch 2, microwave frequency detector 3, microwave phase detector device 4, the first direct-heating type microwave power pass Sensor 5-1 and the second direct-heating type microwave power detector 5-2 cascade is constituted;Six port clamped beam couplers 1 are by coplanar wave Lead 10, dielectric layer 12 and is constituted air layer 15 across clamped beam 13 above it;Co-planar waveguide 10 is produced on SiO2On layer 9, Gu The anchoring area 11 of strutbeam 13 is produced on co-planar waveguide 10, and the lower section of clamped beam 13 is deposited with dielectric layer 12, and with air layer 15, solid Strutbeam 13 collectively forms coupled capacitor structure, and 10 length of co-planar waveguide between two clamped beams 13 is λ/4;Channel selection switch 2 are made of co-planar waveguide 10, anchoring area 11, dielectric layer 12, cantilever beam 14, pull-down electrode 26;The anchoring area 11 of cantilever beam 14 is produced on On co-planar waveguide 10, pull-down electrode 26 is made below cantilever beam, and collectively form switch with 26 upper dielectric layer 12 of pull-down electrode Structure;Microwave frequency detector 3 is by third T junction power combiner 6-3 and the 5th direct-heating type microwave power detector 5-5 Cascade is constituted;For microwave phase detector device 4 by third direct-heating type microwave power detector 5-3, the 4th directly heats type micro-wave Power sensor 5-4, the first T junction power combiner 6-1, the second T junction power combiner 6-2, T junction power divider 7 It constitutes;The topological structure of power combiner, power divider is identical, is made of co-planar waveguide 10 and air bridges 16, and signal is from Ten Single port 7-1 input is T junction power divider, and it is T junction that signal is inputted from the tenth Two-port netwerk 7-2, the 13rd port 7-3 Power combiner;Type micro-wave function sensor 5 is directly heated by Si substrate 8, SiO2Layer 9, co-planar waveguide 10, dielectric layer 12, blocking Capacitor top crown 17, capacitance bottom crown 23, semiconductor arm 19,20 terminal resistance 25 of metal arm are constituted;
First port 1-1 to third port 1-3, the 4th port 1-4 and the first port 1- of six port clamped beam couplers 1 1 to fifth port 1-5, the power degree of coupling difference of the 6th port 1-6 is identical;Measured signal is through six port clamped beam couplers 1 First port 1-1 input, and junior's processing circuit is output to by second port 1-2, by the 4th port 1-4 and the 6th port 1- 6 are output to microwave phase detector device 4, are output to channel selection switch 2 by third port 1-3 and fifth port 1-5;Channel selecting 7th port 2-1 of switch 2 and the 8th port 2-2 meets the first direct-heating type microwave power detector 5-1 and second and directly adds Hot type microwave power detector 5-2, the 9th port 2-3 of channel selection switch 2 and the tenth port 2-4 connect microwave frequency detector 3, the phase-detection to unknown frequency signal is realized, and the signal after detection can be used for other processing circuits.It directly adds The testing principle of hot type microwave power detector and microwave phase, frequency can be explained as follows:
Direct-heating type microwave power detector: microwave power as shown in Figure 5 is inputted from input port, passes through co-planar waveguide 10, which are input to the consumption of terminal resistance 25, is converted to heat;Semiconductor arm 19 and metal arm 20 constitute thermocouple, the centre of thermocouple Region is as hot end 21, and the fringe region of thermocouple is as cold end 22;According to Seebeck effect, by measuring output electrode 18 Thermoelectrical potential known to input microwave power size;Capacitance top crown 17, capacitance bottom crown 23 and dielectric layer 11 are constituted Capacitance prevents the output electrode 18 short-circuit;21 back of hot end of thermocouple by substrate thinning constitute substrate film structure 24 with Improve detection sensitivity.
Frequency detecting: third port 1-3 and fiveth end of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1 Mouth 1-5 is output to channel selection switch 2;7th port 2-1 of channel selection switch 2 and the 8th port 2-2 connects first and directly adds Hot type microwave power detector 5-1 and the second direct-heating type microwave power detector 5-2, the 9th end of channel selection switch 2 Mouth 2-3 and the tenth port 2-4 connects microwave frequency detector 3;The cantilever beam 14 of channel selection switch 2 is grounded, and pull-down electrode 26 connects Driving voltage, when driving voltage is more than or equal to cut-in voltage, cantilever beam 14 is pulled down into, and channel is strobed;When channel selecting is opened When the 7th port 2-1 and the 8th port 2-2 of pass 2 are strobed, the output coupling of six port clamped beam couplers 1 can be tested out Power P3And P5.10 length of co-planar waveguide between two clamped beams 13 of six port clamped beam couplers 1 is λ/4, at this time third The phase difference of port 2-3 and fifth port 2-5 are 90 °, and the phase difference as shown in formula (1) is the linear function of frequency.
λ is the wavelength for inputting microwave signal, and c is the light velocity, εerIt is only related with device architecture for effective dielectric constant.Work as channel When the 9th port 2-3 and the tenth port 2-4 of selection switch 2 are strobed, two way microwave signals pass through third T junction power combing Device 6-3 carries out power combing, and the 5th direct-heating type microwave power detector 5-5 of application detects composite signal power PsGreatly It is small, the frequency of input microwave signal can be obtained according to formula (2).
P3, P5For the power that third port 1-3 is coupled with fifth port 1-5, can be passed by the first direct-heating type microwave power Sensor 5-1 and the second direct-heating type microwave power detector 5-2 detect to obtain.
Phase detectors: fourth port 1-4 and sixth of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1 Port 1-6 is input to microwave phase detector device 4 and carries out phase-detection;Two clamped beams 13 of six port clamped beam couplers 1 it Between 10 length of co-planar waveguide be λ/4, at this time by the two way microwave signals phase difference of the 4th port 1-4 and the 6th port 1-6 It is 90 °;Input power is known as Pr, the reference signal of f (microwave frequency detector 3 measures) identical as measured signal frequency, ginseng It examines signal and is divided into two-way power and the identical signal of phase and the 4th port 1-4 and the 6th port 1- through T junction power divider 7 6 two-way measured signal carries out power combing through the first T junction power combiner 6-1 and the second T junction power combiner 6-2; Third direct-heating type microwave power detector 4-3 and the 4th direct-heating type microwave power detector 4-4 closes left and right two-way Power P aftercs1, Pcs2It is detected, and obtains the phase difference between measured signal and reference signal by formula (3)
P4, P6For the power that the 4th port 1-4 is coupled with the 6th port 1-6, and P4=P3, P6=P5
The preparation method that clamped beam T junction directly heats online unknown frequency microwave phase detector device includes following Step:
1) prepare 4 inches of high resistant Si substrates 8, resistivity is 4000 Ω cm, with a thickness of 400mm;
2) thermally grown a layer thickness is the SiO2 layer 9 of 1.2mm;
3) chemical vapor deposition (CVD) grows one layer of polysilicon, with a thickness of 0.4mm;
4) one layer photoresist of coating and photoetching, in addition to polysilicon resistance region, other regions are photo-etched glue protection, and infuse Enter phosphorus (P) ion, doping concentration 1015cm-2 forms terminal resistance 25;
5) one layer photoresist of coating, one layer photoresist of photoetching polysilicon resistance graphic application, photoetching polysilicon resistance figure, Terminal resistance 25 and semiconductor arm 19 are formed by dry etching again;
6) layer photoresist is coated, photoetching removes the photoetching at co-planar waveguide 10, metal interconnecting wires and output electrode 18 Glue;
7) electron beam evaporation (EBE) forms first layer gold (Au), with a thickness of 0.3mm, removes on photoresist and photoresist Au, removing forms first layer Au, the thermoelectric pile metal interconnecting wires of co-planar waveguide, capacitance bottom crown 23, pull-down electrode 26 And output electrode 18;
8) (LPCVD) one layer of Si3N4 is deposited, with a thickness of 0.1mm;
9) layer photoresist is coated, photoetching simultaneously retains capacitance, and the photoresist of 14 lower section of clamped beam 13 and cantilever beam is done Method etches Si3N4, forms dielectric layer 12;
10) uniformly one layer of air layer 15 of coating and litho pattern retain under clamped beam 13 and cantilever beam 14 with a thickness of 2mm The polyimides of side is as sacrificial layer;
11) coat photoresist, photoetching remove cantilever beam 14, clamped beam 13, anchoring area 11, co-planar waveguide 10, on capacitance The photoresist of 18 position of pole plate 17 and output electrode;
12) seed layer for evaporating 500/1500/300A ° of Ti/Au/Ti, removes one thickness of re-plating after the Ti layer at top Degree is the Au layer of 2mm;
13) Au on photoresist and photoresist is removed, cantilever beam 14, clamped beam 13, anchoring area 11, co-planar waveguide are formed 10, capacitance top crown 17 and output electrode 18;
14) deep reaction ion etching (DRIE) the substrate material back side makes membrane structure 24;
15) discharge polyimide sacrificial layer: developer solution impregnates, and removes the polyimide sacrificial layer under clamped beam, deionization Water impregnates slightly, dehydrated alcohol dehydration, volatilizees, dries under room temperature.
Difference with the prior art of the present invention is:
Present invention employs novel six ports clamped beam coupled structures, wherein the first end of six port clamped beam couplers The power degree of coupling of mouth to third port, the 4th port and first port to fifth port, the 6th port is identical;This clamped beam Coupled structure is coupled out the signal of fraction from the microwave signal of coplanar wave guide transmission to detect the frequency and phase of microwave signal Position size, and most of signal can be input in next stage processing circuit;It is realized using T junction and the power of microwave signal is closed At with distribution, avoid influence of the processing of isolation resistance in traditional Wilkinson power divider to microwave property;Using straight Heated microwave power sensor is connect to detect the microwave power of signal, sensitivity with higher and without DC power;This hair Bright clamped beam T junction directly heats online unknown frequency microwave phase detector device, realizes the 0- to unknown frequency signal 360 ° of phase on-line checkings.
The structure for meeting conditions above is considered as clamped beam T junction of the invention and directly heats online unknown frequency microwave Phase detectors.

Claims (3)

1. a kind of online unknown frequency microwave phase detector device of clamped beam T junction indirect heating, it is characterised in that phase inspection Device is surveyed by six port clamped beam couplers (1), channel selection switch (2), microwave frequency detector (3), microwave phase detector device (4), the first direct-heating type microwave power detector (5-1) and the cascade of the second direct-heating type microwave power detector (5-2) It constitutes;The first port (1-1) of six port clamped beam couplers (1) is to third port (1-3), the 4th port (1-4) and the Single port (1-1) is identical to fifth port (1-5), the power degree of coupling of the 6th port (1-6), and measured signal is through first port (1-1) input, is output to junior's processing circuit by second port (1-2), defeated by the 4th port (1-4) and the 6th port (1-6) The the first T junction power combiner (6-1) and the second T junction power combiner (6-2) of microwave phase detector device (4) are arrived out, and By the first T junction power combiner (6-1) and the second T junction power combiner (6-2), it is respectively outputted to be directly heated by third Type micro-wave power sensor (5-3) and the 4th direct-heating type microwave power detector (5-4), reference signal is through T junction power Distributor (7) is divided into two-way power and the identical signal of phase, respectively with the two of the 4th port (1-4) and the 6th port (1-6) Road measured signal carries out power combing through the first T junction power combiner (6-1) and the second T junction power combiner (6-2);The Three ports (1-3) and fifth port (1-5) are output to channel selection switch (2), the 7th port (1- of channel selection switch (2) 7) and the 8th port (1-8) connects the first direct-heating type microwave power detector (5-1) and the second direct-heating type microwave power Sensor (5-2), the 9th port (2-3) of channel selection switch (2) and the tenth port (2-4) connect microwave frequency detector (3) Third T junction power combiner (6-3), and connect the 5th by third T junction power combiner (6-3) and directly heat type micro-wave function Rate sensor (5-5) realizes the on-line checking of the frequency to unknown frequency signal;
Wherein, the structure of six port clamped beam couplers (1) is symmetrical set with its center line by co-planar waveguide (10), medium Layer (12), air layer (15) and across clamped beam above it (13) constitute;Co-planar waveguide (10) is produced on SiO2On layer (9), Anchoring area (11) is produced on co-planar waveguide (10), the lower section metallization medium layer (12) of clamped beam (13), and with air layer (15), solid Strutbeam (13) collectively forms coupled capacitor structure, and co-planar waveguide (10) length between two clamped beams (13) is λ/4.
2. the online unknown frequency microwave phase detector device of clamped beam T junction indirect heating as described in claim 1, special Sign is channel selection switch (2) by co-planar waveguide (10), anchoring area (11), dielectric layer (12), cantilever beam (14), pull-down electrode (26) it constitutes;The anchoring area (11) of cantilever beam (14) is produced on co-planar waveguide (10), the lower section production drop-down electricity of cantilever beam (14) Pole (26), and construction of switch is collectively formed with pull-down electrode (26) upper dielectric layer (12);The cantilever beam of channel selection switch (2) (14) it is grounded, pull-down electrode (26) connects driving voltage;When driving voltage is more than or equal to cut-in voltage, cantilever beam (14) is pulled down into, Channel is strobed.
3. the online unknown frequency microwave phase detector device of clamped beam T junction indirect heating as described in claim 1, feature It is direct-heating type microwave power detector by Si substrate (8), SiO2Layer (9), co-planar waveguide (10), semiconductor arm (19), Metal arm (20), terminal resistance (25) are constituted;Microwave power is inputted from port 1, is input to terminal electricity by co-planar waveguide (10) Resistance (25) is converted to heat;Semiconductor arm (19) and metal arm (20) constitute thermocouple and pass through survey according to Seebeck effect It measures and inputs microwave power size known to the thermoelectrical potential of output electrode (18).
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