CN106872767B - Clamped beam indirect heating type microwave signal detector device - Google Patents
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- CN106872767B CN106872767B CN201710052685.8A CN201710052685A CN106872767B CN 106872767 B CN106872767 B CN 106872767B CN 201710052685 A CN201710052685 A CN 201710052685A CN 106872767 B CN106872767 B CN 106872767B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
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Abstract
Clamped beam indirect heating type microwave signal detector device of the invention is made of sensor, analog-to-digital conversion, MCS51 single-chip microcontroller and liquid crystal display four module, sensor is by six port clamped beam couplers, channel selection switch, microwave frequency detector, microwave phase detector device are constituted；The first port of six port clamped beam couplers is identical to third port, the 4th port and first port to fifth port, the power degree of coupling of the 6th port difference, measured signal is inputted through first port, indirect heated microwave power detector is exported by second port, indirect heating type microwave phase detector device is exported by the 4th port and the 6th port, by third port and fifth port selection switch；7th port of channel selection switch and the 8th connects indirect heating type microwave power detector, and the 9th port of channel selection switch and the tenth port connect microwave frequency detector；Finally realize detection of the chip simultaneously to the power of microwave signal, three kinds of phase, frequency microwave parameters.
Description
Technical field
The invention proposes clamped beam indirect heating type microwave signal detector devices, belong to the technology of microelectromechanical systems
Field.
Background technique
The parameters such as amplitude, power, the frequency of microwave signal are traditional measurement parameters.Microwave signal phase measurement not only with
Power measurement is related, and itself also occupies highly important status in microwave measurement.With the increase of frequency, signal
Wavelength is gradually approached with component sizes various in circuit, and voltage, electric current exist all in the form of wave in circuit, the phase of signal
Delay is so that not only the voltage at different location, electric current are different in synchronization amplitude in circuit, but also at same position
Voltage, electric current it is also different in different moments.It therefore is necessary in the phase that signal was grasped and controlled to microwave frequency band
, the phase of microwave signal is also just at an important measurement parameter.The present invention is a kind of single based on Si technological design
Chip realizes the clamped beam indirect heating type microwave signal detector device of detection microwave power, phase, frequency simultaneously.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of clamped beam indirect heating type microwave signal detector device, applications
Six port clamped beam Coupler ports are come the detection function module that is of coupled connections different, and by analog-to-digital conversion by parameter to be measured
It is directly displayed on LCD screen, to realize a chip simultaneously to three kinds of power of microwave signal, phase, frequency microwaves
The detection of parameter, the benefit with low-power consumption, low cost.
Technical solution: clamped beam indirect heating type microwave signal detector device of the invention be by sensor, analog-to-digital conversion,
MCS51 single-chip microcontroller and liquid crystal display four big module composition, this four big module is again by the little module and circuit structure on some bases
At.
Wherein Sensor section is by six port clamped beam couplers, channel selection switch, microwave frequency detector, microwave phase
Bit detector forms the first port of six port clamped beam couplers to third port, the 4th port and first port to the 5th
Port, the power degree of coupling difference of the 6th port are identical, and measured signal is inputted through first port, is output to first by second port
Indirect heating type microwave power detector is respectively outputted to the first of microwave phase detector device by the 4th port and the 6th port
Wilkinson power combiner and the 2nd Wilkinson power combiner, and by the first Wilkinson power combiner and
Two Wilkinson power combiners connect the second indirect heating type microwave power detector and the inspection of third indirect heating type microwave power
Survey device；7th port of channel selection switch channel selection switch is output to by third port and fifth port and the 8th port connects
Second indirect heating type microwave power detector and third indirect heating type microwave power detector, the 9th of channel selection switch the
Port and the tenth port connect the 3rd Wilkinson power combiner of microwave frequency detector, are closed by the 3rd Wilkinson power
It grows up to be a useful person and connects the 5th indirect heating type microwave power detector, to realize the detection to microwave signal power, phase, frequency.
Wherein, six port clamped beam couplers are by co-planar waveguide, dielectric layer, air layer and across clamped beam structure above it
At；Co-planar waveguide is produced on SiO2On layer, anchoring area is produced on co-planar waveguide, the lower section metallization medium layer of clamped beam, and with sky
Gas-bearing formation, clamped beam collectively form coupled capacitor structure, and the co-planar waveguide length between two clamped beams is λ/4；
Second big module is analog-to-digital conversion part, its main function is the function that will be exported in three little modules of sensor
Rate is directly changed into digital signal, this part is mainly by STM32 microprocessor and the peripheral circuit being made of AD620 chip
It is constituted.
Followed by MCS51 single chip part, its main function are exactly that each voltage value progress formula is calculated to need
The numerical value of frequency, phase and the power wanted.
Finally be exactly liquid-crystal display section, its main function be exactly the digital signal that will be obtained directly carry out showing it is defeated
Out, the frequency of measured signal, the reading of phase and power are obtained.
The utility model has the advantages that
1) clamped beam indirect heating type microwave signal detector device of the invention is by the power of microwave signal, phase, frequency
Three kinds of survey modules are integrated together, and the clamped beam using six port clamped beam couplers carrys out coupling input signal to different detections
Functional module, realize a chip simultaneously to the power of microwave signal, phase, three kinds of microwave parameters of frequency detection, have
Low-power consumption, inexpensive benefit；
2) clamped beam indirect heating type microwave signal detector device application indirect heating type microwave power of the invention sensing
Device detects the power of microwave signal, has preferable microwave property and without DC power；
3) two Wilkinson power combiners of microwave phase detector module application in the present invention, a Wilkinson
Power divider and two indirect heating type microwave power detectors realize 0-360 ° of phase-detection.
Detailed description of the invention
Fig. 1 is the structural block diagram of clamped beam indirect heating type microwave signal detector device of the present invention,
Fig. 2 is the functional block diagram of clamped beam indirect heating type microwave signal detector device of the present invention,
Fig. 3 is the top view of six port clamped beam couplers,
Fig. 4 is AA ' the directional profile figure of six port clamped beam coupler of Fig. 3,
Fig. 5 is the top view of channel selection switch,
Fig. 6 is AA ' the directional profile figure of Fig. 5 channel selection switch,
Fig. 7 is the top view of Wilkinson power divider/synthesizer,
Fig. 8 is the top view of indirect heating type microwave power detector,
Fig. 9 is AA ' the directional profile figure of Fig. 6 indirect heating type microwave power detector,
Figure 10 is the circuit diagram of Fig. 1 analog-to-digital conversion module.
It include: six port clamped beam couplers 1 in figure, channel selection switch 2, microwave frequency detector, 3, microwave phase
Detector 4, the first indirect heating type microwave power detector 5-1, the second indirect heating type microwave power detector 5-2, third
Indirect heating type microwave power detector 5-3, the 4th indirect heating type microwave power detector 5-4, the 5th indirect heating decline
Wave power sensor 5-5, the 6th indirect heating type microwave power detector 5-6, the first Wilkinson power combiner 6-1, the
Two Wilkinson power combiner 6-2, the 3rd Wilkinson power combiner 6-3, Wilkinson power divider 7, Si lining
Bottom 8, SiO2Layer 9, co-planar waveguide 10, anchoring area 11, dielectric layer 12, clamped beam 13, cantilever beam 14, air layer 15, air bridges 16 are non-
Symmetrical coplanar striplines 17, isolation resistance 18, terminal resistance 19, P-type semiconductor arm 20, N-type semiconductor arm 21, output electrode 22,
Hot end 23, cold end 24, substrate film structure 25, pull-down electrode 26, first port 1-1, second port 1-2, third port 1-3,
4th port 1-4, fifth port 1-5, the 6th port 1-6, the 7th port 2-1, the 8th port 2-2, the 9th port 2-3, the tenth
Port 2-4, the tenth Single port 6-1, the tenth Two-port netwerk 6-2, the 13rd port 6-3.
Specific embodiment
Sensor section is coupled by six port clamped beams in clamped beam indirect heating type microwave signal detector device of the present invention
Device 1, channel selection switch 2, microwave frequency detector 3, the cascade of microwave phase detector device 4 are constituted；Six port clamped beam couplers 1
By co-planar waveguide 10, dielectric layer 12, air layer 15 and clamped beam 13 are constituted；Co-planar waveguide 10 is produced on SiO2On layer 9, clamped beam
13 anchoring area 11 is produced on co-planar waveguide 10, and the lower section of clamped beam 13 is deposited with dielectric layer 12, and with air layer 15, clamped beam
13 collectively form coupled capacitor structure, and 10 length of co-planar waveguide between two clamped beams 13 is λ/4；Channel selection switch 2 by
Co-planar waveguide 10, anchoring area 11, dielectric layer 12, cantilever beam 14, pull-down electrode 26 are constituted；The anchoring area 11 of cantilever beam 14 is produced on coplanar
In waveguide 10, pull-down electrode 26 is made below cantilever beam 14, and collectively form switch knot with 26 upper dielectric layer 12 of pull-down electrode
Structure；Microwave frequency detector 3 is by the 3rd Wilkinson power combiner 6-3 and the 6th indirect heating type microwave power detector
5-6 cascade is constituted；Microwave phase detector device 4 is declined by the 4th indirect heating type microwave power detector 5-4, the 5th indirect heating
Wave power sensor 5-5, the first Wilkinson power combiner 6-1, the 2nd Wilkinson power combiner 6-2,
Wilkinson power divider 7 is constituted；Wilkinson power combiner, the topological structure phase of Wilkinson power divider
Together, it is made of co-planar waveguide 10, asymmetrical coplanar stripline 17 and air bridges 15, isolation resistance 18, signal is from the tenth Single port 6-1
Input is Wilkinson power divider, and it is Wilkinson function that signal is inputted from the tenth Two-port netwerk 6-2, the 13rd port 6-3
Rate synthesizer；
First port 1-1 to third port 1-3, the 4th port 1-4 and the first port of six port clamped beam couplers 1
1-1 to fifth port 1-5, the power degree of coupling difference of the 6th port 1-6 are identical；Measured signal is through six port clamped beam couplers
1 first port 1-1 input, is output to the first indirect heating type microwave power detector 5-1 by second port 1-2, by the 4th
Port 1-4 and the 6th port 1-6 are output to microwave phase detector device 4, are output to by third port 1-3 and fifth port 1-5 logical
Road selects switch 2；7th port 2-1 of channel selection switch 2 and the 8th port 2-2 connects the second indirect heating type micro-wave function respectively
Rate sensor 5-2, third indirect heating type microwave power detector 5-3, the 9th port 2-3 of channel selection switch 2 and the tenth
Port 2-4 connects microwave frequency detector 3, is connected to analog-to-digital conversion mould after each indirect heating type microwave power detector
Block, the digital signal for then obtaining these analog-to-digital conversions all accesses MCS51 single-chip microcontroller and carries out formula calculating, finally by liquid crystal
Display screen shows the numerical values recited of output frequency, phase and power, realizes a chip while the power to microwave signal, phase
Position, the detection of three kinds of microwave parameters of frequency, the benefit with low-power consumption, low cost.The detection of its microwave power, phase, frequency
Principle can be explained as follows:
Power detection: microwave power as shown in Figure 7 is inputted from input port, is input to terminal resistance by co-planar waveguide 10
19 are converted to heat；P-type semiconductor arm 20 and N-type semiconductor arm 21 constitute thermocouple, and thermocouple is close to 19th area of terminal resistance
Domain is as hot end 23, and thermocouple is close to 22 region of output electrode as cold end 24；According to Seebeck effect, exported by measurement
Microwave power size is inputted known to the thermoelectrical potential of electrode 22；Substrate thinning is constituted substrate film knot by 23 back of hot end of thermocouple
Structure 25 is sensitive to improve detection；Watt level P can be expressed by following formula:
Frequency detecting: third port 1-3 and fiveth end of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1
Mouth 1-5 is output to channel selection switch 2；7th port 2-1 of channel selection switch 2 and the 8th port 2-2 connect between second respectively
Meet heated microwave power sensor 5-2, third indirect heating type microwave power detector 5-3, the 9th of channel selection switch 2 the
Port 2-3 and the tenth port 2-4 connect microwave frequency detector 3；The cantilever beam 14 of channel selection switch 2 is grounded, pull-down electrode 26
Driving voltage is connect, when driving voltage is more than or equal to cut-in voltage, cantilever beam 14 is pulled down into, and channel is strobed；Work as channel selecting
When 7th port 2-1 of switch 2 and the 8th port 2-2 are strobed, the output coupling of six port clamped beam couplers 1 can be tested out
Close power P3And P5.10 length of co-planar waveguide between two clamped beams 13 of six port clamped beam couplers 1 is λ/4, at this time the
The phase difference of three port 1-3 and fifth port 1-5 is 90 °, and the phase difference as shown in formula (1) is the linear function of frequency.
λ is the wavelength for inputting microwave signal, and c is the light velocity, εerIt is only related with structure for effective dielectric constant.Work as channel selecting
When 9th port 2-3 of switch 2 and the tenth port 2-4 are strobed, two way microwave signals pass through the 3rd Wilkinson power combing
Device 6-3 carries out power combing, and the 6th indirect heating type microwave power detector 5-6 of application detects composite signal power PsGreatly
It is small, the frequency of input microwave signal can be obtained according to formula (2).
P3, P5For the power that third port 1-3 is coupled with fifth port 1-5, can be passed by the second indirect heating type microwave power
Sensor 5-2 and third indirect heating type microwave power detector 5-3 detect to obtain.
Phase detectors: fourth port 1-4 and sixth of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1
Port 1-6 is input to microwave phase detector device 4 and carries out phase-detection；Two clamped beams 13 of six port clamped beam couplers 1 it
Between 10 length of co-planar waveguide be λ/4, at this time by the two way microwave signals phase difference of the 4th port 1-4 and the 6th port 1-6
It is 90 °；Input power Pr, the reference signal of f (microwave frequency detector 3 measures) identical as measured signal frequency, reference signal
It is divided into two-way power and the identical signal of phase through Wilkinson power divider 7, with the 4th port 1-4 and the 6th port 1-6
Two-way measured signal carry out function through the first Wilkinson power combiner 6-1 and the 2nd Wilkinson power combiner 6-2
Rate synthesis；4th indirect heating type microwave power detector 5-4 and the 5th indirect heating type microwave power detector 5-5 is to left and right
Power P after two-way synthesiscs1, Pcs2It is detected, and obtains the phase difference to be measured between reference signal by formula (4)
P4, P6For the power that the 4th port 1-4 is coupled with the 6th port 1-6, and P4=P3, P6=P5。
Second big module is analog-to-digital conversion part, its main function is the function that will be exported in three little modules of sensor
Rate is directly changed into digital signal, this part is mainly by STM32 microprocessor and the peripheral circuit being made of AD620 chip
It is constituted, then according to formula (1), (2), (3), (4), counter can release the size of corresponding frequency f, phase Φ and power P:
The preparation method of sensor module includes following step in clamped beam indirect heating type microwave signal detector device
It is rapid:
1) prepare 4 inches of high resistant Si substrates 8, resistivity is 4000 Ω cm, with a thickness of 400mm；
2) thermally grown a layer thickness is the SiO2 layer 9 of 1.2mm；
3) chemical vapor deposition (CVD) grows one layer of polysilicon, with a thickness of 0.4mm；
4) one layer photoresist of coating and photoetching, in addition to polysilicon resistance region, other regions are photo-etched glue protection, and infuse
Enter phosphorus (P) ion, doping concentration 1015cm-2 forms isolation resistance 18 and terminal resistance 19；
5) layer photoresist is coated, carries out photoetching with P+ photolithography plate, in addition to 20 region of P-type semiconductor arm, other regions
It is photo-etched glue protection, is then poured into boron (B) ion, doping concentration 1016cm-2 forms the P-type semiconductor arm 20 of thermocouple；
6) layer photoresist is coated, carries out photoetching with N+ photolithography plate, in addition to 21 region of N-type semiconductor arm, other regions
It is photo-etched glue protection, is then poured into phosphorus (P) ion, doping concentration 1016cm-2 forms the N-type semiconductor arm 21 of thermocouple；
7) layer photoresist, photoetching thermoelectric pile and polysilicon resistance figure are coated, then thermocouple is formed by dry etching
Arm and polysilicon resistance；
8) layer photoresist is coated, photoetching removes co-planar waveguide 10, asymmetrical coplanar stripline 17, metal interconnecting wires output electricity
Photoresist at pole 22 and pull-down electrode 26；
9) electron beam evaporation (EBE) forms first layer gold (Au), with a thickness of 0.3mm, removes on photoresist and photoresist
Au, removing forms first layer Au, output electrode 22, the thermoelectric pile metal interconnecting wires of co-planar waveguide 10 and asymmetric coplanar strip 17
And pull-down electrode 26；
10) (LPCVD) one layer of Si3N4 is deposited, with a thickness of 0.1mm；
11) layer photoresist, photoetching and the photoresist for retaining 14 lower section of clamped beam 13 and cantilever beam, dry etching are coated
Si3N4 forms dielectric layer 12；
12) uniformly one layer of air layer 15 of coating and litho pattern retain under clamped beam 13 and cantilever beam 14 with a thickness of 2mm
The polyimides of side is as sacrificial layer；
13) photoresist is coated, photoetching removes clamped beam 13, cantilever beam 14, anchoring area 11, co-planar waveguide 10, asymmetric coplanar
Photoresist with 22 position of line 17 and output electrode；
14) seed layer for evaporating 500/1500/300A ° of Ti/Au/Ti, removes one thickness of re-plating after the Ti layer at top
Degree is the Au layer of 2mm；
15) Au on photoresist and photoresist is removed, clamped beam 13, cantilever beam 14, anchoring area 11, co-planar waveguide are formed
10, asymmetrical coplanar stripline 17 and output electrode 22；
16) deep reaction ion etching (DRIE) the substrate material back side makes membrane structure 25；
17) discharge polyimide sacrificial layer: developer solution impregnates, and removes the polyimide sacrificial layer under clamped beam, deionization
Water impregnates slightly, dehydrated alcohol dehydration, volatilizees, dries under room temperature.
Difference with the prior art of the present invention is:
Present invention employs novel six ports clamped beam coupled structures, and this clamped beam coupled structure is from co-planar waveguide
It is coupled out a part in the microwave signal of transmission, and detects power, frequency and the phase of microwave signal using the signal being coupled out
Position size application indirect heating type microwave power detector detects the power of microwave signal, with preferable microwave property and nothing
DC power；Clamped beam indirect heating type microwave signal detector device of the invention realizes a chip simultaneously to microwave signal
Power, phase, three kinds of microwave parameters of frequency detection, with low-power consumption, low cost benefit
The structure for meeting conditions above is considered as clamped beam indirect heating type microwave signal detector device of the invention.
Claims (3)
1. a kind of clamped beam indirect heating type microwave signal detector device, it is characterised in that the sensing of the microwave signal detector device
Device part is by six port clamped beam couplers (1), channel selection switch (2), microwave frequency detector (3) and microwave phase detector
Device (4), the second indirect heating type microwave power detector (5-2) and third indirect heating type microwave power detector (5-3) grade
Connection is constituted；The first port of six port clamped beam couplers (1) is to third port, the 4th port and first port to the 5th end
Mouth, the power degree of coupling difference of the 6th port are identical, and measured signal is inputted through first port (1-1), defeated by second port (1-2)
Out to the first indirect heating type microwave power detector (5-1), exported respectively by the 4th port (1-4) and the 6th port (1-6)
To the first Wilkinson power combiner (6-1) of microwave phase detector device (4) and the 2nd Wilkinson power combiner (6-
2) it, and by the first Wilkinson power combiner (6-1) and the 2nd Wilkinson power combiner (6-2) connects between the 4th respectively
Connect heated microwave power sensor (5-4) and the 5th indirect heating type microwave power detector (5-5), reference signal warp
Wilkinson power divider (7) is divided into two-way power and the identical signal of phase, with the 4th port (1-4) and the 6th port
The two-way measured signal of (1-6) is through the first Wilkinson power combiner (6-1) and the 2nd Wilkinson power combiner (6-
2) power combing is carried out；Channel selection switch (2) are output to by third port (1-3) and fifth port (1-5), channel selecting is opened
Close (2) the 7th port (2-1) and the 8th port (2-2) connect respectively the second indirect heating type microwave power detector (5-2) and
Third indirect heating type microwave power detector (5-3), the 9th port (2-3) of channel selection switch (2) and the tenth port (2-
4) the 3rd Wilkinson power combiner (6-3) for connecing microwave frequency detector (3), by the 3rd Wilkinson power combiner
(6-3) connects the 6th indirect heating type microwave power detector (5-6)；After each indirect heating type microwave power detector
It is connected to analog-to-digital conversion module, the digital signal for then obtaining these analog-to-digital conversions all accesses MCS51 single-chip microcontroller and carries out formula
It calculates, the numerical values recited of output frequency, phase and power is shown finally by liquid crystal display, to realize to microwave signal
The detection of power, phase, frequency；
Wherein, six port clamped beam couplers (1) are by co-planar waveguide (10), dielectric layer (12), air layer (15) and across at it
Top clamped beam (13) is constituted；Co-planar waveguide (10) is produced on SiO2On layer (9), anchoring area (11) is produced on co-planar waveguide (10)
On, the lower section metallization medium layer (12) of clamped beam (13), and coupled capacitor knot is collectively formed with air layer (15), clamped beam (13)
Structure, co-planar waveguide (10) length between two clamped beams (13) are λ/4.
2. clamped beam indirect heating type microwave signal detector device as described in claim 1, it is characterised in that channel selecting
(2) are switched by co-planar waveguide (10), anchoring area (11), dielectric layer (12), cantilever beam (14), pull-down electrode (26) composition；Cantilever beam
(14) anchoring area (11) is produced on co-planar waveguide (10), and the lower section of cantilever beam (14) makes pull-down electrode (26), and with drop-down
Electrode (26) upper dielectric layer (12) collectively forms construction of switch；The cantilever beam (14) of channel selection switch (2) is grounded, drop-down electricity
Pole (26) connects driving voltage；When driving voltage is more than or equal to cut-in voltage, cantilever beam (14) is pulled down into, and channel is strobed.
3. clamped beam indirect heating type microwave signal detector device as described in claim 1, it is characterised in that indirect heating type
Microwave function sensor is by Si substrate (8), SiO2Layer (9), co-planar waveguide (10), terminal resistance (19), P-type semiconductor arm (20), N
Type semiconductor arm (21), output electrode (22) are constituted；Microwave power is input to terminal resistance (19) quilt by co-planar waveguide (10)
It is converted to heat；P-type semiconductor arm (20) and N-type semiconductor arm (21) constitute thermocouple；According to Seebeck effect, pass through survey
It measures and inputs microwave power size known to the thermoelectrical potential of output electrode (22).
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Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004325162A (en) * | 2003-04-23 | 2004-11-18 | Mitsubishi Heavy Ind Ltd | Phase measuring apparatus and cosmic solar generation system |
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| WO2007101916A1 (en) * | 2006-03-09 | 2007-09-13 | Valtion Teknillinen Tutkimuskeskus | Device and method for measuring electrical power |
| CN101332971A (en) * | 2008-07-29 | 2008-12-31 | 东南大学 | Passing type microwave power detector based on microelectronic mechanical cantilever beam and manufacturing method |
| CN101788605B (en) * | 2010-02-01 | 2012-04-11 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103018559B (en) * | 2012-12-26 | 2015-04-15 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103344831B (en) * | 2013-06-19 | 2015-04-29 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
-
2017
- 2017-01-24 CN CN201710052685.8A patent/CN106872767B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004325162A (en) * | 2003-04-23 | 2004-11-18 | Mitsubishi Heavy Ind Ltd | Phase measuring apparatus and cosmic solar generation system |
| WO2007101916A1 (en) * | 2006-03-09 | 2007-09-13 | Valtion Teknillinen Tutkimuskeskus | Device and method for measuring electrical power |
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| CN101332971A (en) * | 2008-07-29 | 2008-12-31 | 东南大学 | Passing type microwave power detector based on microelectronic mechanical cantilever beam and manufacturing method |
| CN101788605B (en) * | 2010-02-01 | 2012-04-11 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103018559B (en) * | 2012-12-26 | 2015-04-15 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103344831B (en) * | 2013-06-19 | 2015-04-29 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
Non-Patent Citations (2)
| Title |
|---|
| AN X-Band Dual Channel Microwave Phase Detector Based on GaAs MMIC Technology;Han Yan 等;《IEEE SENSORS JOURNAL》;20160901;第16卷(第17期);全文 |
| 基于MEMS技术的差分式微波信号相位检测器;焦永昌 等;《东南大学学报》;20090131;第39卷(第1期);全文 |
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