CN106711164B - Clamped beam indirect heating type microwave signal detector - Google Patents
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- CN106711164B CN106711164B CN201710052698.5A CN201710052698A CN106711164B CN 106711164 B CN106711164 B CN 106711164B CN 201710052698 A CN201710052698 A CN 201710052698A CN 106711164 B CN106711164 B CN 106711164B
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Abstract
Clamped beam indirect heating type microwave signal detector of the invention is made of six port clamped beam couplers, channel selection switch, microwave frequency detector, microwave phase detector device；Six port clamped beam couplers are made of co-planar waveguide, dielectric layer, air layer and clamped beam；The first port of six port clamped beam couplers is identical to third port, the 4th port and first port to fifth port, the power degree of coupling of the 6th port difference, measured signal is inputted through first port, indirect heated microwave power detector is exported by second port, indirect heating type microwave phase detector device is exported by the 4th port and the 6th port, by third port and fifth port output channel selection switch；7th port of channel selection switch and the 8th connects indirect heating type microwave power detector, and the 9th port of channel selection switch and the tenth port connect microwave frequency detector；Finally realize detection of the chip simultaneously to the power of microwave signal, three kinds of phase, frequency microwave parameters.
Description
Technical field
The invention proposes clamped beam indirect heating type microwave signal detectors, belong to the technology neck of microelectromechanical systems
Domain.
Background technique
The parameters such as amplitude, power, the frequency of microwave signal are traditional measurement parameters.Microwave signal phase measurement not only with
Power measurement is related, and itself also occupies highly important status in microwave measurement.With the increase of frequency, signal
Wavelength is gradually approached with component sizes various in circuit, and voltage, electric current exist all in the form of wave in circuit, the phase of signal
Delay is so that not only the voltage at different location, electric current are different in synchronization amplitude in circuit, but also at same position
Voltage, electric current it is also different in different moments.It therefore is necessary in the phase that signal was grasped and controlled to microwave frequency band
, the phase of microwave signal is also just at an important measurement parameter.The present invention is a kind of single based on Si technological design
Chip realizes the clamped beam indirect heating type microwave signal detector of detection microwave power, phase, frequency simultaneously.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of clamped beam indirect heating type microwave signal detectors, using six
Port clamped beam Coupler ports are come the detection function module that is of coupled connections different, to realize a chip simultaneously to microwave
The power of signal, phase, the detection of three kinds of microwave parameters of frequency, the benefit with low-power consumption, low cost.
Technical solution: clamped beam indirect heating type microwave signal detector of the invention by six port clamped beam couplers,
Channel selection switch, microwave frequency detector, microwave phase detector device composition；
The first port of six port clamped beam couplers is to third port, the 4th port and first port to the 5th end
Mouth, the power degree of coupling difference of the 6th port are identical, and measured signal is inputted through first port, is output between first by second port
Heated microwave power detector is connect, is respectively outputted to the first of microwave phase detector device by the 4th port and the 6th port
Wilkinson power combiner and the 2nd Wilkinson power combiner, and by the first Wilkinson power combiner and
Two Wilkinson power combiners connect the second indirect heating type microwave power detector and the inspection of third indirect heating type microwave power
Survey device；7th port of channel selection switch channel selection switch is output to by third port and fifth port and the 8th port connects
Second indirect heating type microwave power detector and third indirect heating type microwave power detector, the 9th of channel selection switch the
Port and the tenth port connect the 3rd Wilkinson power combiner of microwave frequency detector, are closed by the 3rd Wilkinson power
It grows up to be a useful person and connects the 5th indirect heating type microwave power detector, to realize the detection to microwave signal power, phase, frequency.
Wherein, six port clamped beam couplers are by co-planar waveguide, dielectric layer, air layer and across clamped beam structure above it
At；Co-planar waveguide is produced on SiO2On layer, anchoring area is produced on co-planar waveguide, the lower section metallization medium layer of clamped beam, and with sky
Gas-bearing formation, clamped beam collectively form coupled capacitor structure, and the co-planar waveguide length between two clamped beams is λ/4；
The utility model has the advantages that
1) clamped beam indirect heating type microwave signal detector of the invention is by the power of microwave signal, phase, frequency three
Kind is surveyed module and is integrated together, and carrys out coupling input signal to different detection function using the clamped beam of six port clamped beam couplers
Can module, realize a chip simultaneously to the power of microwave signal, phase, three kinds of microwave parameters of frequency detection, have it is low
The benefit of power consumption, low cost；
2) clamped beam indirect heating type microwave signal detector application indirect heating type microwave power detector of the invention
The power of microwave signal is detected, there is preferable microwave property and without DC power；
3) two Wilkinson power combiners of microwave phase detector module application in the present invention, a Wilkinson
Power divider and two indirect heating type microwave power detectors realize 0-360 ° of phase-detection.
Detailed description of the invention
Fig. 1 is the functional block diagram of clamped beam indirect heating type microwave signal detector of the present invention,
Fig. 2 is the top view of six port clamped beam couplers,
Fig. 3 is AA ' the directional profile figure of six port clamped beam coupler of Fig. 2,
Fig. 4 is the top view of channel selection switch,
Fig. 5 is AA ' the directional profile figure of Fig. 4 channel selection switch,
Fig. 6 is the top view of Wilkinson power divider/synthesizer,
Fig. 7 is the top view of indirect heating type microwave power detector,
Fig. 8 is AA ' the directional profile figure of Fig. 7 indirect heating type microwave power detector.
It include: six port clamped beam couplers 1 in figure, channel selection switch 2, microwave frequency detector, 3, microwave phase
Detector 4, the first indirect heating type microwave power detector 5-1, the second indirect heating type microwave power detector 5-2, third
Indirect heating type microwave power detector 5-3, the 4th indirect heating type microwave power detector 5-4, the 5th indirect heating decline
Wave power sensor 5-5, the 6th indirect heating type microwave power detector 5-6, the first Wilkinson power combiner 6-1, the
Two Wilkinson power combiner 6-2, the 3rd Wilkinson power combiner 6-3, Wilkinson power divider 7, Si lining
Bottom 8, SiO2Layer 9, co-planar waveguide 10, anchoring area 11, dielectric layer 12, clamped beam 13, cantilever beam 14, air layer 15, air bridges 16 are non-
Symmetrical coplanar striplines 17, isolation resistance 18, terminal resistance 19, P-type semiconductor arm 20, N-type semiconductor arm 21, output electrode 22,
Hot end 23, cold end 24, substrate film structure 25, pull-down electrode 26, first port 1-1, second port 1-2, third port 1-3,
4th port 1-4, fifth port 1-5, the 6th port 1-6, the 7th port 2-1, the 8th port 2-2, the 9th port 2-3, the tenth
Port 2-4, the tenth Single port 6-1, the tenth Two-port netwerk 6-2, the 13rd port 6-3.
Specific embodiment
Clamped beam indirect heating type microwave signal detector of the present invention by six port clamped beam couplers 1, open by channel selecting
2 are closed, microwave frequency detector 3, the cascade of microwave phase detector device 4 is constituted；Six port clamped beam couplers 1 by co-planar waveguide 10,
Dielectric layer 12, air layer 15 and clamped beam 13 are constituted；Co-planar waveguide 10 is produced on SiO2On layer 9, the anchoring area 11 of clamped beam 13 is made
Make on co-planar waveguide 10, the lower section of clamped beam 13 is deposited with dielectric layer 12, and collectively forms coupling with air layer 15, clamped beam 13
Capacitance structure is closed, 10 length of co-planar waveguide between two clamped beams 13 is λ/4；Channel selection switch 2 is by co-planar waveguide 10, anchor
Area 11, dielectric layer 12, cantilever beam 14, pull-down electrode 26 are constituted；The anchoring area 11 of cantilever beam 14 is produced on co-planar waveguide 10, cantilever
Pull-down electrode 26 is made below beam 14, and collectively forms construction of switch with 26 upper dielectric layer 12 of pull-down electrode；Microwave frequency inspection
Device 3 is surveyed to be made of the 3rd Wilkinson power combiner 6-3 and the 6th indirect heating type microwave power detector 5-6 cascade；It is micro-
Wave phase detector 4 is by the 4th indirect heating type microwave power detector 5-4, the 5th indirect heating type microwave power detector 5-
5, the first Wilkinson power combiner 6-1, the 2nd Wilkinson power combiner 6-2, Wilkinson power divider 7
It constitutes；The topological structure of Wilkinson power combiner, Wilkinson power divider is identical, by co-planar waveguide 10, non-right
Coplanar striplines 17 and air bridges 15, isolation resistance 18 are claimed to constitute, it is Wilkinson power that signal is inputted from the tenth Single port 6-1
Distributor, it is Wilkinson power combiner that signal is inputted from the tenth Two-port netwerk 6-2, the 13rd port 6-3；
First port 1-1 to third port 1-3, the 4th port 1-4 and the first port of six port clamped beam couplers 1
1-1 to fifth port 1-5, the power degree of coupling difference of the 6th port 1-6 are identical；Measured signal is through six port clamped beam couplers
1 first port 1-1 input, is output to the first indirect heating type microwave power detector 5-1 by second port 1-2, by the 4th
Port 1-4 and the 6th port 1-6 are output to microwave phase detector device 4, are output to by third port 1-3 and fifth port 1-5 logical
Road selects switch 2；7th port 2-1 of channel selection switch 2 and the 8th port 2-2 connects the second indirect heating type micro-wave function respectively
Rate sensor 5-2, third indirect heating type microwave power detector 5-3, the 9th port 2-3 of channel selection switch 2 and the tenth
Port 2-4 connects microwave frequency detector 3, realizes a chip simultaneously to three kinds of power of microwave signal, phase, frequency microwaves
The detection of parameter, the benefit with low-power consumption, low cost.Its microwave power, phase, frequency testing principle can explain such as
Under:
Power detection: microwave power as shown in Figure 7 is inputted from input port, is input to terminal resistance by co-planar waveguide 10
19 are converted to heat；P-type semiconductor arm 20 and N-type semiconductor arm 21 constitute thermocouple, and thermocouple is close to 19th area of terminal resistance
Domain is as hot end 23, and thermocouple is close to 22 region of output electrode as cold end 24；According to Seebeck effect, exported by measurement
Microwave power size is inputted known to the thermoelectrical potential of electrode 22；Substrate thinning is constituted substrate film knot by 23 back of hot end of thermocouple
Structure 25 is to improve detection sensitivity.
Frequency detecting: third port 1-3 and fiveth end of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1
Mouth 1-5 is output to channel selection switch 2；7th port 2-1 of channel selection switch 2 and the 8th port 2-2 connect between second respectively
Meet heated microwave power sensor 5-2, third indirect heating type microwave power detector 5-3, the 9th of channel selection switch 2 the
Port 2-3 and the tenth port 2-4 connect microwave frequency detector 3；The cantilever beam 14 of channel selection switch 2 is grounded, pull-down electrode 26
Driving voltage is connect, when driving voltage is more than or equal to cut-in voltage, cantilever beam 14 is pulled down into, and channel is strobed；Work as channel selecting
When 7th port 2-1 of switch 2 and the 8th port 2-2 are strobed, the output coupling of six port clamped beam couplers 1 can be tested out
Close power P3And P5.10 length of co-planar waveguide between two clamped beams 13 of six port clamped beam couplers 1 is λ/4, at this time the
The phase difference of three port 1-3 and fifth port 1-5 is 90 °, and the phase difference as shown in formula (1) is the linear function of frequency.
λ is the wavelength for inputting microwave signal, and c is the light velocity, εerIt is only related with structure for effective dielectric constant.Work as channel selecting
When 9th port 2-3 of switch 2 and the tenth port 2-4 are strobed, two way microwave signals pass through the 3rd Wilkinson power combing
Device 6-3 carries out power combing, and the 6th indirect heating type microwave power detector 5-6 of application detects composite signal power PsGreatly
It is small, the frequency of input microwave signal can be obtained according to formula (2).
P3, P5For the power that third port 1-3 is coupled with fifth port 1-5, can be passed by the second indirect heating type microwave power
Sensor 5-2 and third indirect heating type microwave power detector 5-3 detect to obtain.
Phase detectors: fourth port 1-4 and sixth of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1
Port 1-6 is input to microwave phase detector device 4 and carries out phase-detection；Two clamped beams 13 of six port clamped beam couplers 1 it
Between 10 length of co-planar waveguide be λ/4, at this time by the two way microwave signals phase difference of the 4th port 1-4 and the 6th port 1-6
It is 90 °；Input power Pr, the reference signal of f (microwave frequency detector 3 measures) identical as measured signal frequency, reference signal
It is divided into two-way power and the identical signal of phase through Wilkinson power divider 7, with the 4th port 1-4 and the 6th port 1-6
Two-way measured signal carry out function through the first Wilkinson power combiner 6-1 and the 2nd Wilkinson power combiner 6-2
Rate synthesis；4th indirect heating type microwave power detector 5-4 and the 5th indirect heating type microwave power detector 5-5 is to left and right
Power P after two-way synthesiscs1, Pcs2It is detected, and obtains the phase difference to be measured between reference signal by formula (3)
P4, P6For the power that the 4th port 1-4 is coupled with the 6th port 1-6, and P4=P3, P6=P5。
The preparation method of clamped beam indirect heating type microwave signal detector including the following steps:
1) prepare 4 inches of high resistant Si substrates 8, resistivity is 4000 Ω cm, with a thickness of 400mm；
2) thermally grown a layer thickness is the SiO of 1.2mm2Layer 9；
3) chemical vapor deposition (CVD) grows one layer of polysilicon, with a thickness of 0.4mm；
4) one layer photoresist of coating and photoetching, in addition to polysilicon resistance region, other regions are photo-etched glue protection, and infuse
Enter phosphorus (P) ion, doping concentration 1015cm-2, form isolation resistance 18 and terminal resistance 19；
5) layer photoresist is coated, P is used+Photolithography plate carries out photoetching, in addition to 20 region of P-type semiconductor arm, other regions
It is photo-etched glue protection, is then poured into boron (B) ion, doping concentration 1016cm-2, form the P-type semiconductor arm 20 of thermocouple；
6) layer photoresist is coated, N is used+Photolithography plate carries out photoetching, in addition to 21 region of N-type semiconductor arm, other regions
It is photo-etched glue protection, is then poured into phosphorus (P) ion, doping concentration 1016cm-2, form the N-type semiconductor arm 21 of thermocouple；
7) layer photoresist, photoetching thermoelectric pile and polysilicon resistance figure are coated, then thermocouple is formed by dry etching
Arm and polysilicon resistance；
8) layer photoresist is coated, photoetching removes co-planar waveguide 10, asymmetrical coplanar stripline 17, metal interconnecting wires output electricity
Photoresist at pole 22 and pull-down electrode 26；
9) electron beam evaporation (EBE) forms first layer gold (Au), with a thickness of 0.3mm, removes on photoresist and photoresist
Au, removing forms first layer Au, output electrode 22, the thermoelectric pile metal interconnecting wires of co-planar waveguide 10 and asymmetric coplanar strip 17
And pull-down electrode 26；
10) (LPCVD) one layer of Si is deposited3N4, with a thickness of 0.1mm；
11) layer photoresist, photoetching and the photoresist for retaining 14 lower section of clamped beam 13 and cantilever beam, dry etching are coated
Si3N4, form dielectric layer 12；
12) uniformly one layer of air layer 15 of coating and litho pattern retain under clamped beam 13 and cantilever beam 14 with a thickness of 2mm
The polyimides of side is as sacrificial layer；
13) photoresist is coated, photoetching removes clamped beam 13, cantilever beam 14, anchoring area 11, co-planar waveguide 10, asymmetric coplanar
Photoresist with 22 position of line 17 and output electrode；
14) seed layer for evaporating 500/1500/300A ° of Ti/Au/Ti, removes one thickness of re-plating after the Ti layer at top
Degree is the Au layer of 2mm；
15) Au on photoresist and photoresist is removed, clamped beam 13, cantilever beam 14, anchoring area 11, co-planar waveguide are formed
10, asymmetrical coplanar stripline 17 and output electrode 22；
16) deep reaction ion etching (DRIE) the substrate material back side makes membrane structure 25；
17) discharge polyimide sacrificial layer: developer solution impregnates, and removes the polyimide sacrificial layer under clamped beam, deionization
Water impregnates slightly, dehydrated alcohol dehydration, volatilizees, dries under room temperature.
Difference with the prior art of the present invention is:
Present invention employs novel six ports clamped beam coupled structures, and this clamped beam coupled structure is from co-planar waveguide
It is coupled out a part in the microwave signal of transmission, and detects power, frequency and the phase of microwave signal using the signal being coupled out
Position size application indirect heating type microwave power detector detects the power of microwave signal, with preferable microwave property and nothing
DC power；Clamped beam indirect heating type microwave signal detector of the invention realizes a chip simultaneously to microwave signal
Power, phase, the detection of three kinds of microwave parameters of frequency, the benefit with low-power consumption, low cost
The structure for meeting conditions above is considered as clamped beam indirect heating type microwave signal detector of the invention.
Claims (3)
1. a kind of clamped beam indirect heating type microwave signal detector, it is characterised in that the microwave signal detector is consolidated by six ports
Strutbeam coupler (1), channel selection switch (2), microwave frequency detector (3) and microwave phase detector device (4) cascade are constituted；Six
The first port of port clamped beam coupler (1) is to third port, the 4th port and first port to fifth port, the 6th end
The power degree of coupling difference of mouth is identical, and measured signal is inputted through first port (1-1), is output to first by second port (1-2)
Indirect heating type microwave power detector (5-1) is respectively outputted to microwave phase by the 4th port (1-4) and the 6th port (1-6)
First Wilkinson power combiner (6-1) of bit detector (4) and the 2nd Wilkinson power combiner (6-2), and by
First Wilkinson power combiner (6-1) and the 2nd Wilkinson power combiner (6-2) connect the second indirect heating and decline
Wave power detector (5-2) and third indirect heating type microwave power detector (5-3)；By third port (1-3) and the 5th end
Mouthful (1-5) is output to the 7th port (2-1) of channel selection switch (2) channel selection switch (2) and the 8th port (2-2) connects the
Two indirect heating type microwave power detectors (5-2) and third indirect heating type microwave power detector (5-3), channel selecting is opened
The 9th port (2-3) and the tenth port (2-4) of closing (2) connect the 3rd Wilkinson power combing of microwave frequency detector (3)
Device (6-3) connects the 5th indirect heating type microwave power detector (5-5) by the 3rd Wilkinson power combiner (6-3), from
And realize the detection to microwave signal power, phase, frequency；
Wherein, six port clamped beam couplers (1) are by co-planar waveguide (10), dielectric layer (12), air layer (15) and across at it
Top clamped beam (13) is constituted；Co-planar waveguide (10) is produced on SiO2On layer (9), anchoring area (11) is produced on co-planar waveguide (10)
On, the lower section metallization medium layer (12) of clamped beam (13), and coupled capacitor knot is collectively formed with air layer (15), clamped beam (13)
Structure, co-planar waveguide (10) length between two clamped beams (13) are λ/4.
2. clamped beam indirect heating type microwave signal detector as described in claim 1, it is characterised in that channel selecting is opened
(2) are closed by co-planar waveguide (10), anchoring area (11), dielectric layer (12), cantilever beam (14), pull-down electrode (26) composition；Cantilever beam
(14) anchoring area (11) is produced on co-planar waveguide (10), and the lower section of cantilever beam (14) makes pull-down electrode (26), and with drop-down
Electrode (26) upper dielectric layer (12) collectively forms construction of switch；The cantilever beam (14) of channel selection switch (2) is grounded, drop-down electricity
Pole (26) connects driving voltage；When driving voltage is more than or equal to cut-in voltage, cantilever beam (14) is pulled down into, and channel is strobed.
3. clamped beam indirect heating type microwave signal detector as described in claim 1, it is characterised in that indirect heating declines
Wave function sensor is by Si substrate (8), SiO2Layer (9), co-planar waveguide (10), terminal resistance (19), P-type semiconductor arm (20), N-type
Semiconductor arm (21), output electrode (22) are constituted；Microwave power is input to terminal resistance (19) by co-planar waveguide (10) and is turned
It is melted into heat；P-type semiconductor arm (20) and N-type semiconductor arm (21) constitute thermocouple；According to Seebeck effect, pass through measurement
Microwave power size is inputted known to the thermoelectrical potential of output electrode (22).
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008039684A (en) * | 2006-08-09 | 2008-02-21 | Toshiba Corp | Solid-state image sensing element and manufacturing method therefor and imaging device |
| CN102360039A (en) * | 2011-08-11 | 2012-02-22 | 东南大学 | Five-port micromachine cantilever-based capacitance type microwave power sensor and manufacturing method thereof |
| CN102375090A (en) * | 2011-09-22 | 2012-03-14 | 东南大学 | Micromechanical cantilever beam switch online microwave power detector and manufacturing method thereof |
| CN103344831A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
-
2017
- 2017-01-24 CN CN201710052698.5A patent/CN106711164B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008039684A (en) * | 2006-08-09 | 2008-02-21 | Toshiba Corp | Solid-state image sensing element and manufacturing method therefor and imaging device |
| CN102360039A (en) * | 2011-08-11 | 2012-02-22 | 东南大学 | Five-port micromachine cantilever-based capacitance type microwave power sensor and manufacturing method thereof |
| CN102375090A (en) * | 2011-09-22 | 2012-03-14 | 东南大学 | Micromechanical cantilever beam switch online microwave power detector and manufacturing method thereof |
| CN103344831A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
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