CN102375090A - Micromechanical cantilever beam switch online microwave power detector and manufacturing method thereof - Google Patents
Micromechanical cantilever beam switch online microwave power detector and manufacturing method thereof Download PDFInfo
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- CN102375090A CN102375090A CN2011102837055A CN201110283705A CN102375090A CN 102375090 A CN102375090 A CN 102375090A CN 2011102837055 A CN2011102837055 A CN 2011102837055A CN 201110283705 A CN201110283705 A CN 201110283705A CN 102375090 A CN102375090 A CN 102375090A
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Abstract
The invention discloses a micromechanical cantilever beam switch online microwave power detector, which consists of a microelectronic mechanical cantilever beam switch type microwave power coupler with a variable coupling degree and a direct heating MEMS (Microelectronic Mechanical System) microwave power detector. In the structure, gallium arsenide is taken as a substrate; the coupler comprises an MEMS cantilever beam switch structure; by controlling a driving electrode, a cantilever beam switch is in DOWN or UP state, and the input microwave power is coupled to a thermal coupler at different ratios respectively; microwave power output by coupling is directly absorbed by the thermal couple, and electromagnetic energy is directly converted into heat, so that a thermal couple at the other end is used for outputting on an output press welding block at a constant electric potential difference; and the constant electric potential difference corresponds to the magnitude of the microwave power obtained at the coupling output end.
Description
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Technical field
The present invention proposes online microwave power detector of micromachine cantilever beam switch and preparation method, belong to the technical field of microelectromechanical systems (MEMS).
Background technology
Comprise power, phase place and frequency three big information in the microwave signal, wherein power is a key character parameter of microwave signal.The measurement of microwave power has considerable using value in microwave technology, it has been an indispensable part in the electromagnetic wave measurement field.Along with in recent years, MEMS technology flourish makes that the various application based on this technology become possibility.A kind of its principle of work of microwave power detector based on the MEMS technology is; Microwave signal can directly heat the thermoelectric arm that is positioned at line end; Electromagnetic energy is converted into heat energy, then will be between heated thermopair and the thermoelectric arm that constitutes by another kind of material formation temperature poor, according to the Seebeck effect; This temperature difference can make and occur on the output terminal of thermopair and the corresponding constant potential difference of microwave power size, thereby accomplishes the measurement of microwave power.It is good that this measuring method has sensitivity; Advantages such as linearity height and power attenuation are little; Develop rapidly along with modern microwave integrated circuit; Microwave power measurement requires to realize the online measurement of the microwave power on the sheet, can come the ratio of controlled microwave power according to actual needs, and measure the size of microwave power.Utilize microelectronic mechanical cantilever beam switching regulator microwave power coupling mechanism, and adopt above-mentioned direct-heating type MEMS microwave power detector scheme, make the online microwave power detector of cantilever switch become possibility with above-mentioned functions.
Summary of the invention
Technical matters:In order to realize online measurement to control microwave power; It is a kind of based on MEMS technology online microwave power detector of microelectronic mechanical cantilever beam switch and preparation method that the present invention provides; Through the controlled microwave power coupling mechanism of the design degree of coupling; Realize online collection that microwave signal is carried out with different ratios, make the thermoelectric pile that is complementary with transmission line characteristic impedance and constitute by the thermoelectric arm of different materials at the coupling output terminal simultaneously, the microwave signal of input is absorbed fully; And be converted into the form output that thermoelectrical potential is a constant voltage, thereby detected microwave power is big or small under the specific operation mode of coupling mechanism.
Technical scheme:The online microwave power detector of micromachine cantilever beam switch of the present invention is a substrate with the gallium arsenide (GaAs) of band back of the body gold; The thickness even metal is arranged as being total to ground at the back side of substrate; The anchor district, air bridges, output press welding block, isolation resistance, one that on substrate, are provided with the main transmission line that little band signal line forms, secondary transmission line, two identical MEMS semi-girders, semi-girder be by four thermoelectric arms, i.e. two pairs of thermoelectric piles that thermopair is formed:
There is a layer thickness even metal at the gallium arsenide substrate back side, as the common ground of microstrip line construction, adopts gold copper-base alloy to constitute.
Little band signal line is used for the Transmission Microwave signal on substrate, be the main transmission line structure of the variable microwave power coupling mechanism of the realization degree of coupling.Four ports of this coupling mechanism, and main transmission line, secondary transmission line, coupled transmission line constitute by this structure; Through planar dimension and the mutual spacing that designs each little band signal line, can design the degree of coupling under various mode of operations of this coupling mechanism as requested.This little band signal line adopts gold copper-base alloy to constitute.
This microwave power coupling mechanism comprises two identical movable MEMS cantilever beam structures, and it belongs to the category of series connection direct contact type mems switch.The anchor district of semi-girder is connected with main little band signal line; The semi-girder below has drive electrode, on drive electrode, covers the silicon nitride medium layer, and drive electrode is connected with press welding block by lead-in wire; Below the semi-girder free end, have the little band signal line of transition of band salient point, and do not have the silicon nitride medium layer on its salient point.Have or not driving voltage to control this semi-girder through the drive electrode below the control semi-girder and whether be in DOWN or UP state, thereby realize the tight coupling or the loose coupling duty of this microwave power coupling mechanism.MEMS semi-girder, drive electrode, lead-in wire and press welding block all adopt gold copper-base alloy to constitute.
Air bridges is used for cross-over connection by isolated coupled microstrip line and the little band signal line of transition, and its air bridges and coupled microstrip line all adopt gold copper-base alloy to constitute.
Isolation resistance is connected to the isolated port of coupling mechanism, be used for absorbing fully because main transmission line input impedance mismatch, and at the microwave power of isolated port output, this resistance can be heat with this part power transfer, adopts tantalum-nitride material to constitute.
Thermoelectric pile is connected the coupling output port of coupling mechanism, is made up of two pairs of thermopairs with coupling output port impedance phase coupling, and every pair of thermopair is contacted by a semiconductor thermocouple arm and a metal thermocouple arm and constitutes.According to the Seebeck effect; This structure of thermopair can directly absorb the microwave signal power by end input; And produce thermoelectrical potential at the other end of thermopair, through output press welding block output stable electrical potential difference, can confirm the watt level of microwaves corresponding signal by this electric potential difference.Wherein the semiconductor thermocouple arm adopts the GaAs material that mixes, and metal thermocouple arm adopts gold copper-base alloy to constitute, and the output press welding block adopts gold copper-base alloy.
On physical construction, the anchor district of little band signal line, MEMS semi-girder, semi-girder, drive electrode, lead-in wire, press welding block, output press welding block, air bridges, isolation resistance and thermoelectric pile all are produced on the same gallium arsenide substrate.
The online microwave power detector of micromachine cantilever beam switch of the present invention is to be made up of a variable microwave power coupling mechanism and the direct-heating type microwave power detector of the degree of coupling; Microwave power coupling mechanism wherein is one four port devices; Be respectively input port; Straight-through output port, coupling output port and isolated port.Between input port and the straight-through output port main transmission line that constitutes by a little band signal line, i.e. coupling mechanism main line; There are two parallel microstrip lines to constitute secondary transmission line between coupling output port and the isolated port, i.e. the coupling mechanism by-pass; An isolated relatively microstrip line is arranged in the middle of by-pass, be called coupled transmission line, link to each other with the outer transition microstrip line of coupling mechanism through air bridges; The coupling output port of coupling mechanism is connected to the thermoelectric pile that is made up of two pairs of thermopairs; Isolated port is connected to isolation resistance, connects the common ground of microstrip line through through hole; When the impedance of coupling mechanism input port does not match, isolated port will have microwave power output, and isolation resistance will sponge this part power this moment; When the coupling mechanism input port mated, isolated port did not have power output; This coupling mechanism has two MEMS cantilever switch that structure is identical, and semi-girder anchor district is on the coupling mechanism main line, and semi-girder free end below is the transition microstrip line that bump structure is arranged; Drive electrode links to each other with press welding block through lead-in wire, and when on the drive electrode driving voltage being arranged, cantilever switch is in the DOWN attitude; Its free end forms with the salient point of transition microstrip line and contacts; Microwave signal uploads to coupled transmission line from main line, and main line coupled zone and by-pass coupled zone form the tight coupling district, and the degree of coupling is about 6dB; The thermopair of coupling output terminal will sponge microwave power, be converted into the steady heat electromotive force and on the output press welding block, export; When drive electrode did not have driving voltage, cantilever switch was in the UP attitude, and its free end does not form with transition microstrip line salient point and contacts; Have only each other near the major-minor line intercouple; This moment, this coupling mechanism was equivalent to common directional coupler, and the degree of coupling is about 3dB, and less relatively microwave power is by the output of coupling output port; And be converted into stable thermoelectrical potential through the thermopair of this port, on the output press welding block, export.
The preparation method of the online microwave power detector of micromachine cantilever beam switch is:
1) prepares gallium arsenide substrate: select the semi-insulating GaAs substrate of extension for use, wherein extension N
+The doping content of gallium arsenide is for being 10
18Cm
-3, its square resistance be 100～130 Ω/;
2) at the N of extension
+Gallium arsenide substrate applies photoresist, keeps preparation and makes ohmic contact regions and the photoresist that begins to take shape the semiconductor thermocouple arm of thermoelectric pile, removes the N of the local extension of photoresist then
+Gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm that begins to take shape, being completed into its doping content is 10
17Cm
-3The semiconductor thermocouple arm of thermoelectric pile;
4) photoetching: remove the not local photoresist of bump making process;
5) etching forms the gallium arsenide substrate of being with the salient point shape;
6) on the substrate that step 3) obtains, apply photoresist, remove the photoresist that the metal thermocouple arm place of thermoelectric pile is made in preparation;
7) sputter gold germanium nickel/gold on substrate, its thickness are 2700 altogether;
8) peel off the photoresist that stays in the removal step 6), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm of formation thermoelectric pile removed;
9) on the substrate that step 8) obtains, apply photoresist, remove the photoresist that the isolation resistance place is made in preparation;
10) sputter tantalum nitride on substrate, its thickness is 1
μM;
11) photoresist lift off that stays in the step 9) is removed, the tantalum nitride above the related removal photoresist begins to take shape the isolation resistance that is made up of tantalum nitride;
12) on gallium arsenide substrate, apply photoresist, remove preparation and make the main line that constitutes by microstrip line, by-pass, coupled transmission line, the anchor district of MEMS semi-girder, MEMS semi-girder, drive electrode, press welding block, output press welding block, air bridges and lead-in wire;
13) golden through evaporation mode growth one deck on substrate, its thickness is 0.3
μM;
14) photoresist that step 12) is stayed is removed; Relatedly remove the gold above the photoresist, begun to take shape the main line that constitutes by microstrip line, by-pass; Coupled transmission line, the anchor district of MEMS semi-girder, MEMS semi-girder, drive electrode, press welding block, output press welding block, air bridges and lead-in wire;
15) anti-carve tantalum nitride, form the isolation resistance that is connected with isolated port;
16) deposit and photoetching polyimide sacrificial layer: on gallium arsenide substrate, apply 1.6
μThe polyimide sacrificial layer that m is thick requires to fill up pit, the thickness of polyimide sacrificial layer determined the MEMS semi-girder with its below the distance between the silicon nitride medium layer and the height of air bridges on the drive electrode; The photoetching polyimide sacrificial layer, only keep MEMS semi-girder and air bridges the below sacrifice layer
17) down payment that is used to electroplate through the evaporation mode growth: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
18) apply photoresist, remove preparation and make the main line that constitutes by microstrip line, by-pass, coupled transmission line, the anchor district of MEMS semi-girder, MEMS semi-girder, drive electrode, press welding block, output press welding block, air bridges and the local photoresist of lead-in wire;
19) electroplate one deck gold, its thickness is 2
μM;
20) photoresist that stays removal step 18);
21) anti-carve titanium/gold/titanium, the corrosion down payment forms the main line that is made up of microstrip line, by-pass, coupled transmission line, the anchor district of MEMS semi-girder, MEMS semi-girder, drive electrode, press welding block, output press welding block, air bridges and lead-in wire;
22) with this gallium arsenide substrate thinning back side to 100
μM;
23) the substrate back dry etching is made through hole;
24) at this gallium arsenide substrate back side evaporation one deck gold;
25) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under MEMS semi-girder and the air bridges, and deionized water soaks slightly, the absolute ethyl alcohol dehydration, and normal temperature volatilization is down dried.
Beneficial effect:The online microwave power detector of micromachine cantilever beam switch of the present invention has been realized online detection that the microwave power size is controlled, has the advantage compatible mutually with GaAs single-chip microwave integration circuit.
Description of drawings
Fig. 1 is the synoptic diagram of the online microwave power detector of micromachine cantilever beam switch;
Fig. 2 is the partial top view of the online microwave power detector of micromachine cantilever beam switch;
Fig. 3 is the A-A sectional view of the online microwave power detector of micromachine cantilever beam switch;
Comprise among the figure: microwave signal input end 1, straight-through output terminal 2, coupling output terminal 3, isolation end 4, the main transmission line 5 that constitutes by microstrip line; Secondary transmission line 6, coupled transmission line 7, transition microstrip line 8, salient point 9, main line coupled zone 10; By-pass coupled zone 11, MEMS semi-girder 12, MEMS semi-girder anchor district 13, silicon nitride medium layer 14, drive electrode 15; Lead-in wire 16, press welding block 17, air bridges 18, isolation resistance 19, semiconductor thermocouple arm 20; Metal thermocouple arm 21, output press welding block 22, through hole 23, gallium arsenide substrate 24, back of the body gold 25.
Specific embodiments
The specific embodiments of the online microwave power detector of micromachine cantilever beam switch of the present invention is following:
The online microwave power detector of micromachine cantilever beam switch of the present invention is a substrate 24 with gallium arsenide (GaAs); The metal that uniform thickness is arranged at the back side of substrate is as being total to ground; Promptly back of the body gold 25, on substrate 24, be provided with the main transmission line 5 formed by little band signal line, secondary transmission line 6, MEMS semi-girder 12, semi-girder anchor district 13, air bridges 18, export press welding block 22, isolation resistance 19, one by 20,21 two pairs of thermoelectric piles that thermopair is formed of four thermopairs:
There is a layer thickness even metal at gallium arsenide substrate 24 back sides, promptly carry on the back gold as the common ground of microstrip line construction, adopt gold copper-base alloy to constitute.
Little band signal line is used for the Transmission Microwave signal on substrate 24, be the primary structure of the variable microwave power coupling mechanism of the realization degree of coupling.Four ports of this coupling mechanism, and main transmission line 5, secondary transmission line 6, coupled transmission line 6 constitute by little band signal line; Through planar dimension and the mutual spacing that designs each little band signal line, can design the degree of coupling under various mode of operations of this coupling mechanism as requested.This little band signal line adopts gold copper-base alloy to constitute.
This microwave power coupling mechanism comprises two identical movable MEMS semi-girder 12 structures, and it belongs to the category of series connection direct contact type mems switch.The anchor district 13 of semi-girder is connected with main transmission line 5; Semi-girder below has drive electrode 15, on drive electrode 15, covers silicon nitride medium layer 14, and drive electrode 15 is connected with press welding block 17 by lead-in wire 16; Below the semi-girder free end, have the little band signal line 8 of transition of band salient point 9, and do not have silicon nitride medium layer 14 on its salient point 9.Have or not driving voltage to control this semi-girder through the drive electrode 15 below the control semi-girder and whether be in DOWN or UP state, thereby realize the tight coupling or the loose coupling duty of this microwave power coupling mechanism.MEMS semi-girder 10, drive electrode 15, lead-in wire 16 and press welding block 17 all adopt gold copper-base alloy to constitute.
Thermoelectric pile is connected the coupling output port 3 of coupling mechanism, is made up of two pairs of thermopairs with coupling output port impedance phase coupling, and every pair of thermopair is contacted by a semiconductor thermocouple arm 20 and a metal thermocouple arm 21 and constitutes.According to the Seebeck effect, this structure of thermopair can directly absorb the microwave signal power by end input, and produces thermoelectrical potential at the other end of thermopair, by output press welding block 22 output stable electrical potential differences.Can confirm the watt level of microwaves corresponding signal by this electric potential difference.Wherein semiconductor thermocouple arm 20 adopts the GaAs material that mixes, and metal thermocouple arm 21 adopts gold copper-base alloy to constitute, and the output press welding block adopts gold copper-base alloy.
On physical construction, the anchor district 13 of little band signal line 5-8, MEMS semi-girder 12, semi-girder, drive electrode 15, lead-in wire 16, press welding block 17, output press welding block 22, air bridges 18, isolation resistance 19 and thermoelectric pile all are produced on the same gallium arsenide substrate 24.
The online microwave power detector of micromachine cantilever beam switch of the present invention is to be made up of a variable microwave power coupling mechanism and the direct-heating type microwave power detector of the degree of coupling; Microwave power coupling mechanism wherein is one four port devices; Be respectively input port 1; Straight-through output port 2, coupling output port 3 and isolated port 4.Be the main transmission line that is made up of a little band signal line between input port 1 and the straight-through output port 2, promptly the coupling mechanism main line 5; Have two parallel microstrip lines to constitute secondary transmission line between coupling output port 3 and the isolated port 4, promptly the coupling mechanism by-pass 6; An isolated relatively microstrip line is arranged in the middle of by-pass, be called coupled transmission line 7, link to each other with the outer transition microstrip line 8 of coupling mechanism through air bridges 18; The coupling output port 3 of coupling mechanism is connected to the thermoelectric pile that the thermoelectric arm 20 and 21 by different materials constitutes; Isolated port 4 is connected to isolation resistance 19, connects the common ground of microstrip line through through hole 23, i.e. substrate back of the body gold 25; When 1 impedance of coupling mechanism input port does not match, isolated port 4 will have microwave power output, and isolation resistance 19 will sponge this part power this moment; When coupling mechanism input port 1 coupling, isolated port 3 does not have power output; This coupling mechanism has two MEMS semi-girder 12 switches that structure is identical, and semi-girder anchor district 13 is on coupling mechanism main line 5, and semi-girder 5 free ends below is the transition microstrip line 8 that salient point 9 structures are arranged; Drive electrode 15 links to each other with press welding block 17 through lead-in wire 16, and when on the drive electrode 15 driving voltage being arranged, cantilever switch is in the DOWN attitude; Its free end forms with transition microstrip line 8 and contacts; Microwave signal uploads to coupled transmission line 7 from main line 5, and main line coupled zone 10 forms the tight coupling district with by-pass coupled zone 11, and the degree of coupling is about 6dB; Thermopair through coupling output port 3 absorbs microwave power, is converted into the output on output press welding block 22 of steady heat electromotive force; When drive electrode 15 did not have driving voltage, cantilever switch was in the UP attitude, and its free end does not form with transition microstrip line 8 and contacts; Have only each other near the major-minor line intercouple; This moment, this coupling mechanism was equivalent to common directional coupler, and the degree of coupling is about 3dB, and less relatively microwave power is by 3 outputs of coupling output port; And be converted into stable thermoelectrical potential through the thermopair of this port, on the output press welding block, export.
The preparation method of the online microwave power detector of micromachine cantilever beam switch is:
1) prepares gallium arsenide substrate 24: select the semi-insulating GaAs substrate of extension for use, wherein extension N
+The doping content of gallium arsenide is for being 10
18Cm
-3, its square resistance be 100～130 Ω/;
2) at the N of extension
+Gallium arsenide substrate applies photoresist, keeps preparation and makes ohmic contact regions and the photoresist that begins to take shape the semiconductor thermocouple arm 20 of thermoelectric pile, removes the N of the local extension of photoresist then
+Gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm 20 that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm 20 that begins to take shape, being completed into its doping content is 10
17Cm
-3The semiconductor thermocouple arm 20 of thermoelectric pile;
4) photoetching: remove the not photoresist in bump making process 9 places;
5) etching forms the gallium arsenide substrate of being with salient point 9 shapes;
6) on the substrate that step 3) obtains, apply photoresist, remove the photoresist that metal thermocouple arm 21 places of thermoelectric pile are made in preparation;
7) sputter gold germanium nickel/gold on substrate 24, its thickness are 2700 altogether;
8) peel off the photoresist that stays in the removal step 6, the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm 21 of formation thermoelectric pile removed;
9) on the substrate that step 8) obtains, apply photoresist, remove the photoresist that isolation resistance 19 places are made in preparation;
10) sputter tantalum nitride on substrate, its thickness is 1
μM;
11) photoresist lift off that stays in the step 9) is removed, the tantalum nitride above the related removal photoresist begins to take shape the isolation resistance 19 that is made up of tantalum nitride;
12) on gallium arsenide substrate 24, apply photoresist; Remove preparation and make the main line 5 that constitutes by microstrip line; By-pass 6, coupled transmission line 7, the anchor district 13 of MEMS semi-girder 12, MEMS semi-girder, drive electrode 15, press welding block 17, output press welding block 22, air bridges 18 and go between 16;
13) at substrate 24) to go up through evaporation mode growth one deck gold, its thickness is 0.3
μM;
14) photoresist that step 12) is stayed is removed; Relatedly removed the gold above the photoresist; Begin to take shape the main line 5 that constitutes by microstrip line; By-pass 6, coupled transmission line 7, the anchor district 13 of MEMS semi-girder 12, MEMS semi-girder, drive electrode 15, press welding block 17, output press welding block 22, air bridges 18 and go between 16;
15) anti-carve tantalum nitride, form the isolation resistance 19 that is connected with isolated port 4;
16) deposit and photoetching polyimide sacrificial layer: on gallium arsenide substrate, apply 1.6
μThe polyimide sacrificial layer that m is thick requires to fill up pit, the thickness of polyimide sacrificial layer determined MEMS semi-girder 12 with its below the distance between the silicon nitride medium layer 14 and the height of air bridges 18 on the drive electrode 15; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of MEMS semi-girder 12 and air bridges 18 belows
17) down payment that is used to electroplate through the evaporation mode growth: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
18) apply photoresist; Remove preparation and make the main line 5 that constitutes by microstrip line; By-pass 6, coupled transmission line 7, the photoresist in the anchor district 13 of MEMS semi-girder 12, MEMS semi-girder, drive electrode 15, press welding block 17, output press welding block 22, air bridges 18 and 16 places that go between;
19) electroplate one deck gold, its thickness is 2
μM;
20) photoresist that stays removal step 18);
21) anti-carve titanium/gold/titanium, the corrosion down payment forms the main line 5 that is made up of microstrip line, by-pass 6, coupled transmission line 7, the anchor district 13 of MEMS semi-girder 12, MEMS semi-girder, drive electrode 15, press welding block 17, output press welding block 22, air bridges 18 and go between 16;
22) with these gallium arsenide substrate 24 thinning back sides to 100
μM;
23) the substrate back dry etching is made through hole 23;
24) at this gallium arsenide substrate 24 back sides evaporation one deck gold;
25) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under MEMS semi-girder 12 and the air bridges 18, and deionized water soaks slightly, the absolute ethyl alcohol dehydration, and normal temperature is volatilization down, dries.
Distinguish whether to be the standard of this structure following:
The online microwave power detector of micromachine cantilever beam switch of the present invention is made up of an adjustable microwave power coupling mechanism and the direct-heating type thermoelectric pile of the degree of coupling; 2 of coupling mechanism input port 1 and straight-through ports are the main transmission lines 5 that is made up of microstrip line, are the secondary transmission lines 6 that is made up of microstrip line between coupling output port 3 and the isolated port 4; The MEMS semi-girder is on main line 5, and there is drive electrode 15 its below; Drive electrode 15 control cantilever switch 12 make this coupling mechanism work in tight coupling pattern or loose coupling pattern; Isolate output port 4 and be connected to isolation resistance 19, by through hole 23 ground connection, this resistance be used to absorb since input port 1 impedance when not matching at the microwave power of the output of this port; It is right that coupling output terminal 3 is connected to two pairs of thermopairs, and each is made up of a semiconductor thermocouple arm 20 and a metal thermocouple arm 21 thermopair; To the be coupled microwave power of output port 3 output of thermopair is converted into stable thermoelectrical potential, by 22 outputs of output press welding block; The structure that satisfies above condition promptly is regarded as the online microwave power detector of micromachine cantilever beam switch of the present invention.
Claims (4)
1. online microwave power detector of micromachine cantilever beam switch, it is characterized in that: this structure comprises gallium arsenide substrate (24), by the main line (5) that microstrip line constitutes, by-pass (6); Coupled transmission line (7), MEMS semi-girder (12), the anchor district (13) of MEMS semi-girder; Drive electrode (15), press welding block (17), output press welding block (22); Air bridges (18), lead-in wire (16) semiconductor thermocouple arm (20), metal thermocouple arm (21).
2. the online microwave power detector of micromachine cantilever beam switch according to claim 1; It is characterized in that: the microwave power coupling mechanism that the degree of coupling is adjustable based on MEMS cantilever switch (12); It can realize tight coupling 6dB, and two mode of operations of loose coupling 3dB; Control the drop-down of cantilever switch and maintenance through having or not driving voltage on the drive electrode (15); Thereby main transmission line (5) is connected with coupled transmission line (7) or breaks off; Make the coupled zone of coupling mechanism serve as theme coupled zone (10) and by-pass coupling (11), or only be by near major and minor line be coupled; This coupling mechanism is isolated termination isolation resistance (19), is used for absorbing because the microwave power at the isolated port place that input port (1) impedance mismatching causes.
3. the online microwave power detector of micromachine cantilever beam switch according to claim 1; It is characterized in that: coupling mechanism coupling output port (3) connects the thermal reactor of being made up of semiconductor thermocouple arm (20) and metal thermocouple arm (21); No matter which kind of pattern coupling mechanism is operated under; The microwave power that is coupled to by-pass by main line will be exported from coupling output port (3), and directly absorbed by thermopair, according to the Seebeck benefit; Thermopair is converted into thermoelectrical potential with microwave power, in the form output of output press welding block with burning voltage.
4. the preparation method of the online microwave power detector of micromachine cantilever beam switch as claimed in claim 1 is characterized in that the preparation method is:
1) prepares gallium arsenide substrate (24): select the semi-insulating GaAs substrate of extension for use, wherein extension N
+The doping content of gallium arsenide is for being 10
18Cm
-3, its square resistance be 100～130 Ω/;
2) at the N of extension
+Gallium arsenide substrate applies photoresist, keeps preparation and makes ohmic contact regions and the photoresist that begins to take shape the semiconductor thermocouple arm (20) of thermoelectric pile, removes the N of the local extension of photoresist then
+Gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm (20) that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm (20) that begins to take shape, being completed into its doping content is 10
17Cm
-3The semiconductor thermocouple arm (20) of thermoelectric pile;
4) photoetching: remove the not local photoresist of bump making process (9);
5) etching forms the gallium arsenide substrate of being with salient point (9) shape;
6) on the substrate that step 3) obtains, apply photoresist, the photoresist that the metal thermocouple arm (21) of removal preparation making thermoelectric pile is located;
7) go up sputter gold germanium nickel/gold at substrate (24), its thickness is 2700 altogether;
8) peel off the photoresist that stays in the removal step 6), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm (21) of formation thermoelectric pile removed;
9) on the substrate that step 8) obtains, apply photoresist, remove preparation and make the photoresist that isolation resistance (19) is located;
10) sputter tantalum nitride on substrate, its thickness is 1
μM;
11) photoresist lift off that stays in the step 9) is removed, the tantalum nitride above the related removal photoresist begins to take shape the isolation resistance (19) that is made up of tantalum nitride;
12) go up the coating photoresist in gallium arsenide substrate (24); Remove preparation and make the main line (5) that constitutes by microstrip line; By-pass (6); Coupled transmission line (7), the anchor district (13) of MEMS semi-girder (12), MEMS semi-girder, drive electrode (15), press welding block (17), output press welding block (22), air bridges (18) and lead-in wire (16);
13) go up through evaporation mode growth one deck gold at substrate (24), its thickness is 0.3
μM;
14) photoresist that step 12) is stayed is removed; Relatedly removed the gold above the photoresist; Begin to take shape the main line (5) that constitutes by microstrip line; By-pass (6), coupled transmission line (7), the anchor district (13) of MEMS semi-girder (12), MEMS semi-girder, drive electrode (15), press welding block (17), output press welding block (22), air bridges (18) and lead-in wire (16);
15) anti-carve tantalum nitride, form the isolation resistance (19) that is connected with isolated port (4);
16) deposit and photoetching polyimide sacrificial layer: on gallium arsenide substrate, apply 1.6
μThe polyimide sacrificial layer that m is thick requires to fill up pit, and the thickness of polyimide sacrificial layer has determined on MEMS semi-girder (12) and its below drive electrode (15) distance between the silicon nitride medium layer (14) and the height of air bridges (18); The photoetching polyimide sacrificial layer, only keep MEMS semi-girder (12) and air bridges (18) below sacrifice layer
17) down payment that is used to electroplate through the evaporation mode growth: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
18) apply photoresist; Remove preparation and make the main line (5) that constitutes by microstrip line; By-pass (6); Coupled transmission line (7), the anchor district (13) of MEMS semi-girder (12), MEMS semi-girder, drive electrode (15), press welding block (17), output press welding block (22), air bridges (18) and the local photoresist of lead-in wire (16);
19) electroplate one deck gold, its thickness is 2
μM;
20) photoresist that stays removal step 18);
21) anti-carve titanium/gold/titanium; The corrosion down payment; The main line that formation is made up of microstrip line (5); By-pass (6), coupled transmission line (7), the anchor district (13) of MEMS semi-girder (12), MEMS semi-girder, drive electrode (15), press welding block (17), output press welding block (22), air bridges (18) and lead-in wire (16);
22) with this gallium arsenide substrate (24) thinning back side to 100
μM;
23) the substrate back dry etching is made through hole (23);
24) evaporation one deck gold at this gallium arsenide substrate (24) back side;
25) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under MEMS semi-girder (12) and the air bridges (18), and deionized water soaks slightly, the absolute ethyl alcohol dehydration, and normal temperature volatilization is down dried.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103257268A (en) * | 2013-05-20 | 2013-08-21 | 东南大学 | Warping plate type intelligent detection microwave power sensor |
| CN104375028A (en) * | 2014-11-07 | 2015-02-25 | 江苏博普电子科技有限责任公司 | Device for verifying performance of test board used for C-waveband GaN microwave power device |
| CN104635036A (en) * | 2015-01-15 | 2015-05-20 | 南京邮电大学 | Micromechanical high-precision cantilever type microwave power detection system and preparation method thereof |
| CN106645921A (en) * | 2017-01-24 | 2017-05-10 | 东南大学 | Direct type millimeter wave signal detector for silicon-based gap coupling type T-shaped knot |
| CN106698326A (en) * | 2017-01-24 | 2017-05-24 | 东南大学 | Direct heating type millimeter wave signal detector based on silicon-based micromechanical cantilever beam T-shaped junction |
| CN106711164A (en) * | 2017-01-24 | 2017-05-24 | 东南大学 | Indirect heating type microwave signal detector for clamped beam |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6667670B2 (en) * | 2000-07-25 | 2003-12-23 | Korea Institute Of Science And Technology | Microwave double-pole double-throw switch and microwave divide/through switch and power amplifier using thereof |
| CN1588098A (en) * | 2004-09-20 | 2005-03-02 | 东南大学 | On-line microwave power micro mechanical sensor and its producing method |
| CN1858601A (en) * | 2006-06-09 | 2006-11-08 | 东南大学 | Capacitance microwave power sensor |
| CN101915870A (en) * | 2010-07-12 | 2010-12-15 | 东南大学 | MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof |
-
2011
- 2011-09-22 CN CN201110283705.5A patent/CN102375090B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6667670B2 (en) * | 2000-07-25 | 2003-12-23 | Korea Institute Of Science And Technology | Microwave double-pole double-throw switch and microwave divide/through switch and power amplifier using thereof |
| CN1588098A (en) * | 2004-09-20 | 2005-03-02 | 东南大学 | On-line microwave power micro mechanical sensor and its producing method |
| CN1858601A (en) * | 2006-06-09 | 2006-11-08 | 东南大学 | Capacitance microwave power sensor |
| CN101915870A (en) * | 2010-07-12 | 2010-12-15 | 东南大学 | MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof |
Non-Patent Citations (2)
| Title |
|---|
| SU SHI 等: "A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology", 《JOURNAL OF SEMICONDUCTORS》, vol. 30, no. 5, 31 May 2009 (2009-05-31) * |
| WANG D.B 等: "A WIDEBAND ANTI-HIGH-OVERLOAD THERMOELECTRIC MICROWAVE POWER SENSOR BASED ON GAAS MMIC TECHNOLOGY", 《TRANSDUCERS" 11》, 9 June 2011 (2011-06-09), pages 32 - 35, XP031910468, DOI: doi:10.1109/TRANSDUCERS.2011.5969125 * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103257268A (en) * | 2013-05-20 | 2013-08-21 | 东南大学 | Warping plate type intelligent detection microwave power sensor |
| CN103257268B (en) * | 2013-05-20 | 2015-06-03 | 东南大学 | Warping plate type intelligent detection microwave power sensor |
| CN104375028A (en) * | 2014-11-07 | 2015-02-25 | 江苏博普电子科技有限责任公司 | Device for verifying performance of test board used for C-waveband GaN microwave power device |
| CN104635036A (en) * | 2015-01-15 | 2015-05-20 | 南京邮电大学 | Micromechanical high-precision cantilever type microwave power detection system and preparation method thereof |
| CN106645921A (en) * | 2017-01-24 | 2017-05-10 | 东南大学 | Direct type millimeter wave signal detector for silicon-based gap coupling type T-shaped knot |
| CN106698326A (en) * | 2017-01-24 | 2017-05-24 | 东南大学 | Direct heating type millimeter wave signal detector based on silicon-based micromechanical cantilever beam T-shaped junction |
| CN106711164A (en) * | 2017-01-24 | 2017-05-24 | 东南大学 | Indirect heating type microwave signal detector for clamped beam |
| CN106645921B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction |
| CN106711164B (en) * | 2017-01-24 | 2019-05-17 | 东南大学 | Clamped beam indirect heating type microwave signal detector |
| CN111044796A (en) * | 2019-12-31 | 2020-04-21 | 东南大学 | Symmetrical thermoelectric MEMS microwave standing wave meter and preparation method thereof |
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| CN111044796B (en) * | 2019-12-31 | 2022-03-29 | 东南大学 | Symmetrical thermoelectric MEMS microwave standing wave meter and preparation method thereof |
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