CN106802370B - Silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors - Google Patents
Silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors Download PDFInfo
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- CN106802370B CN106802370B CN201710052702.8A CN201710052702A CN106802370B CN 106802370 B CN106802370 B CN 106802370B CN 201710052702 A CN201710052702 A CN 201710052702A CN 106802370 B CN106802370 B CN 106802370B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
- G01R25/04—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents involving adjustment of a phase shifter to produce a predetermined phase difference, e.g. zero difference
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
- G01R23/12—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage by converting frequency into phase shift
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Abstract
Silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors of the invention are made of co-planar waveguide, slot-coupled structure, phase shifter, single-pole double-throw switch (SPDT), Wilkinson power splitter, Wilkinson function clutch and indirect type thermoelectric (al) type power sensor, total is made based on high resistant Si substrate, there are four slot-coupled structures for setting altogether, two slot-coupled structures of top realize the frequency measurement of signal, two slot-coupled structures of lower section realize the phase measurement of signal, and a phase shifter is provided between the gap of front and back；Wilkinson power splitter and Wilkinson function clutch are made of co-planar waveguide, asymmetrical coplanar stripline and resistance；Indirect type thermoelectric (al) type power sensor is mainly made of co-planar waveguide, two resistance and thermoelectric pile, and thermoelectric pile is made of the cascade of two different semiconductor arms, and the heat that it can be distributed terminal resistance is converted into thermoelectrical potential.These structures simply and efficiently realize the phase measurement of millimeter wave under unknown frequency.
Description
Technical field
The invention proposes silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors, belong to microelectronics machine
The technical field of tool system (MEMS).
Background technique
In the epoch of current information technology rapid development, people are also more and more deep to the research of signal measurement and processing,
From pervious low frequency signal to high-frequency microwave signal again to the optical signal of higher frequency etc., the measurement difficulty of these signals
It is increasing.Millimeter-wave signal is a kind of high-frequency signal between microwave signal and optical signal, and frequency and phase are millimeters
Two very important parameters of wave signal, the phase measurement and frequency measurement technology of millimeter wave are in military, space flight and aviation
And the communications field suffers from very extensive application, it is however generally that, the phase measurement of millimeter wave needs to know its frequency,
It just can determine that the frequency size of reference signal in this way, but in the case where unknown frequency, it is necessary to millimeter wave is measured in advance
Frequency, then carry out the phase measurement of millimeter wave, thus disclosed the integration of millimeter-wave frequency measurement and phase measurement
Problem, not only structure is complicated, higher cost for the millimeter wave phase detectors under existing unknown frequency, but also reliability is not yet
Height, detection efficiency are relatively low.
For the problem of millimeter wave phase-detection under unknown frequency, with to co-planar waveguide slot-coupled structure,
The further investigation of Wilkinson power splitter, Wilkinson function clutch and indirect type thermoelectric (al) type power sensor, the present invention exist
A kind of online phase detectors of the millimeter wave under unknown frequency are devised on high resistant Si substrate, it is this to utilize slot-coupled structure
Online phase detectors be not only simple in structure novelty, and frequency detecting and phase-detection can be integrated together, be had
Higher potential using value.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phases
Detector, in order to solve the integration problem of millimeter-wave frequency detection and phase-detection, present invention employs co-planar waveguide gap couplings
Structure is closed, relatively conventional Wilkinson power splitter and Wilkinson function are then used in terms of power distribution and power combing
Clutch structure, in terms of the measurement of composite signal then use indirect type thermoelectric (al) type power sensor, thus high-efficient simple it is real
Show to the millimeter wave phase measurement under unknown frequency.
Technical solution: silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors of the invention are by coplanar
Waveguide, No.1 slot-coupled structure, No. two slot-coupled structures, No. three slot-coupled structures, No. four slot-coupled structures, phase shifts
Device, No.1 single-pole double-throw switch (SPDT), No. two single-pole double-throw switch (SPDT)s, a Wilkinson power splitter, three Wilkinson function clutchs
And five indirect type thermoelectric (al) type power sensors are constituted, the connection relationship of specific structure is as follows: first port is that signal is defeated
Enter end, No.1 slot-coupled structure and No. two slot-coupled structures are located at ground wire on the upside of co-planar waveguide, No. three slot-coupled structures
Then it is located at ground wire on the downside of co-planar waveguide with No. four slot-coupled structures, these two pair gap is symmetrical about center signal line, they it
Between separated by a phase shifter, look first at frequency detection module, No.1 slot-coupled structure is connected to second port, second end
Mouth is connected with the input terminal of No.1 single-pole double-throw switch (SPDT), and the output end of No.1 single-pole double-throw switch (SPDT) is connected respectively to No.1
Wilkinson function clutch and No.1 indirect type thermoelectric (al) type power sensor, likewise, No. two slot-coupled structures are connected to third
Port, third port are connected with the input terminal of No. two single-pole double-throw switch (SPDT)s, and the output end of No. two single-pole double-throw switch (SPDT)s is separately connected
To No.1 Wilkinson function clutch and No. two indirect type thermoelectric (al) type power sensors, and the output of No.1 Wilkinson function clutch
End is connected to No. three indirect type thermoelectric (al) type power sensors；Phase detecting module, No. three slot-coupled structures and the 4th end are seen again
Mouth is connected, and the 4th port is connected to No. two Wilkinson function clutchs, and No. four slot-coupled structures are connected with fifth port, and the 5th
Port is connected to No. three Wilkinson function clutchs, and reference signal is inputted by the input terminal of No. four Wilkinson power splitters, and four
The output end of number Wilkinson power splitter is connected respectively to No. two Wilkinson function clutchs and No. three Wilkinson function clutchs,
Then, the output end of No. two Wilkinson function clutchs connects No. four indirect type thermoelectric (al) type power sensors, No. three Wilkinson
The output end of function clutch connects No. five indirect type thermoelectric (al) type power sensors, is connected to subsequent process circuit at the 6th port.
Firstly, for the frequency detection module of millimeter wave, it mainly by two slot-coupled structures, one section of phase shifter,
Two single-pole double-throw switch (SPDT)s, a Wilkinson function clutch and an indirect type function thermoelectric (al) type rate sensor are constituted, millimeter
Wave signal first passes around the signal P that No.1 slot-coupled structure Coupling goes out fraction1, then by after one section of phase shifter again by
No. two slot-coupled structure Couplings go out the signal P of part2, certain phase difference is just produced between two such coupled signal
Actually this section of phase shifter is exactly one section of coplanar waveguide transmission line, its length is set as with centre frequency f0For wave at 35GHz
Long 1/4, at this time phase differenceIt is exactly 90 °, but when frequency f variation, phase differenceIt is the function of frequency f:
Wherein f is the frequency of millimeter-wave signal, and c is the light velocity, εerFor the relative dielectric constant of transmission line, Δ L is phase shifter
Length.As long as therefore measuringValue, the size of frequency f can be obtained, then by two coupled signal P1、P2By
Wilkinson function clutch is synthesized, then goes detection composite signal power P with indirect type thermoelectric (al) type power sensorsSize,
The power P of composite signalsIt is about phase differenceTrigonometric function relationship:
Due to coupled signal P1、P2Size it is unknown, therefore two single-pole double-throw switch (SPDT)s are employed herein and are coupled out two
The small signaling rate come first carries out power detection, obtains its watt level, then carries out power conjunction by Wilkinson function clutch again
At obtaining PsSize, the size of frequency f can be then calculated by formula (2).Pay attention to phase difference hereOnly two couplings
The phase difference between small signal is closed, is not the phase Φ of former millimeter-wave signal, it is also necessary to by phase detecting module come accurate
Determine the phase Φ of original millimeter-wave signal.
Secondly, similarly and by two slot-coupled structure Couplings going out part for the phase detecting module of millimeter wave
Small signal P3And P4, since gap size is identical, so the small signal P of coupling that their watt level measures before being equal to1With
P2, their initial phase is all Φ, and only wherein second slot-coupled signal has propagated phase moreReference signal PcBy
Wilkinson power splitter resolves into the signal of left and right two-way striking resemblances, the left side signal and first slot-coupled signal all the way
Power combing is carried out, synthesis power P is obtainedL, it is the trigonometric function relationship about phase Φ；And the right signal and second all the way
A slot-coupled signal carries out power combing, obtains synthesis power PR, it is about phaseTrigonometric function relationship；
Wherein P3=P1、P4=P2, in conjunction with the two relational expressions, not only the size of available phase Φ, can also be obtained
The advanced or lagged relationship of phase.
The utility model has the advantages that in the present invention, in order to realize the online phase-detection of millimeter wave under unknown frequency, using simple
The millimeter-wave signal of fraction can be coupled out by novel slot-coupled structure, this structure, and utilize this part coupling letter
Number realize the integrated of frequency and phase-detection, and most signal can continue to propagate on co-planar waveguide and carry out subsequent
Signal processing, the Wilkinson power splitter and Wilkinson function clutch structure that wherein power splitter and function clutch use, power inspection
It surveys device and then uses indirect type thermoelectric (al) type power sensor, these structures very effective can be integrated, be greatly improved
The efficiency of signal detection.
Detailed description of the invention
Fig. 1 is the top view of silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors of the invention
Fig. 2 is that single-pole double throw is opened in silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors of the invention
The top view of pass
Fig. 3 is that single-pole double throw is opened in silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors of the invention
Close the sectional view in the direction AA '
Fig. 4 is Wilkinson in silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors of the invention
The top view of power splitter and Wilkinson function clutch
Fig. 5 is indirect type thermoelectricity in silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors of the invention
The top view of formula power sensor
Fig. 6 is indirect type thermoelectricity in silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors of the invention
The sectional view of formula power sensor
It include: frequency detection module 1, phase detecting module 2, co-planar waveguide 3, phase shifter 4, slot-coupled structure 5- in figure
1, slot-coupled structure 5-2, slot-coupled structure 5-3, slot-coupled structure 5-4, high resistant Si substrate 6, SiO2Layer 7, resistance 8,
Thermoelectric pile 9, P-type semiconductor arm 10, N-type semiconductor arm 11, Ohmic contact 12, output electrode 13, asymmetrical coplanar stripline 14 are empty
Air bridge 15, substrate membrane structure 16, hot end 17, cold end 18, No.1 single-pole double-throw switch (SPDT) 19, No. two single-pole double-throw switch (SPDT)s 20, switch
Beam 21, anchoring area 22, Si3N4Dielectric layer 23 switchs pull-down electrode plate 24, first port 1-1, second port 1-2, third port 1-
3, the 4th port 1-4, fifth port 1-5, the 6th port 1-6.
Specific embodiment
Silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors of the invention are to be produced on high resistant Si lining
It is by co-planar waveguide 3, No.1 slot-coupled structure 5-1, No. two slot-coupled structure 5-2, No. three slot-coupled structures on bottom 6
5-3, No. four slot-coupled structure 5-4, phase shifter 4, the single-pole double-throw switch (SPDT) 20, one of No.1 single-pole double-throw switch (SPDT) 19, two
Wilkinson power splitter, three Wilkinson function clutchs and five indirect type thermoelectric (al) type power sensors are constituted.
Single-pole double-throw switch (SPDT) 19 is by co-planar waveguide 3, anchoring area 22, Si3N4Dielectric layer 23 switchs pull-down electrode plate 24 and opens
Closing what beam 21 formed, co-planar waveguide 3 is connected in anchoring area 22, and anchoring area 22 is connected with the switch beam 21 in two different branch,
Wherein a branch connects indirect type thermoelectric (al) type power sensor, and another branch connects the input terminal of Wilkinson function clutch,
There is one layer of the air gaps for 21 lower section of switch beam, and switch pull-down electrode plate 24 is mounted in this air gap, and are opening
It closes and is also covered with one layer of Si on pull-down electrode plate 243N4Dielectric layer 23.
The structure of Wilkinson power splitter and Wilkinson function clutch be it is identical, mainly by co-planar waveguide 3, asymmetric
Coplanar striplines 14 and resistance 5 are constituted, and the identical asymmetrical coplanar stripline 14 of two of them length can be by the milli on co-planar waveguide 3
Metric wave signal is divided into equal two parts, and resistance 8 is located at the end of two asymmetrical coplanar striplines 14.
Heat to electricity conversion is realized using indirect type thermoelectric (al) type power sensor, it is mainly by co-planar waveguide (3), two resistance
8 and thermoelectric pile 9 constituted, and thermoelectric pile 9 is to pass through Ohmic contact 12 by P-type semiconductor arm 10 and N-type semiconductor arm 11
Cascade composition, wherein co-planar waveguide 3 is connected with two resistance 8, and has one section of interval between thermoelectric pile 9 and terminal resistance 8.
The connection relationship of specific structure is as follows: first port 1-1 is signal input part, No.1 slot-coupled structure 5-1 and
No. two slot-coupled structure 5-2 are located at 3 upside ground wire of co-planar waveguide, No. three slot-coupled structure 5-3 and No. four slot-coupled knots
Structure 5-4 is then located at 3 downside ground wire of co-planar waveguide, and these two pair gap is symmetrical about center signal line, by a phase shift between them
Device 4 separates, and looks first at frequency detection module 1, and No.1 slot-coupled structure 5-1 is connected to second port 1-2, second port 1-
2 are connected with the input terminal of No.1 single-pole double-throw switch (SPDT) 19, and the output end of No.1 single-pole double-throw switch (SPDT) 19 is connected respectively to No.1
Wilkinson function clutch and No.1 indirect type thermoelectric (al) type power sensor, likewise, No. two slot-coupled structure 5-2 are connected to
Third port 1-3, third port 1-3 are connected with the input terminal of No. two single-pole double-throw switch (SPDT)s 20, No. two single-pole double-throw switch (SPDT)s 20
Output end is connected respectively to No.1 Wilkinson function clutch and No. two indirect type thermoelectric (al) type power sensors, and No.1
The output end of Wilkinson function clutch is connected to No. three indirect type thermoelectric (al) type power sensors；See phase detecting module 2 again, three
Number slot-coupled structure 5-3 is connected with the 4th port 1-4, and the 4th port 1-4 is connected to No. two Wilkinson function clutchs, and No. four
Slot-coupled structure 5-4 is connected with fifth port 1-5, and fifth port 1-5 is connected to No. three Wilkinson function clutchs, with reference to letter
Number by the input terminal inputs of No. four Wilkinson power splitters, the output end of No. four Wilkinson power splitters is connected respectively to two
Number Wilkinson function clutch and No. three Wilkinson function clutchs, then, the output end connection four of No. two Wilkinson function clutchs
The output end of number indirect type thermoelectric (al) type power sensor, No. three Wilkinson function clutchs connects No. five indirect type thermoelectric (al) type power
Sensor is connected to subsequent process circuit at the 6th port 1-6.
Silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors of the invention the preparation method comprises the following steps:
1) prepare high resistant Si substrate 6 (4000 Ω cm), with a thickness of 400um；
2) one layer of SiO of thermal oxide growth2Layer 7, with a thickness of 1.2um；
3) one layer of polysilicon is deposited, P-type ion injects (doping concentration 1015cm-2), to reach wanting for production resistance 8
It asks.
4) P-type ion injection is carried out again using place of the mask 1 to thermoelectric pile P-type semiconductor arm 10 to be made, reach
To the resistivity requirement of P-type semiconductor arm 10；
5) N-type ion injection is carried out using place of the mask 2 to thermoelectric pile N-type semiconductor arm 11 to be made, reaches N-type
The resistivity requirement of semiconductor arm 11；
6) photoresist is coated, photoetching is carried out to polysilicon layer, ultimately forms the P-type semiconductor arm 10 of resistance 8, thermoelectric pile 9
With N-type semiconductor arm 11；
7) Ohmic contact 12 is made in the P-type semiconductor arm 10 of thermoelectric pile and 11 junction of N-type semiconductor arm；
8) photoresist, the photoetching at removal transmission line, output electrode 13 and switch pull-down electrode plate 24 are coated on substrate
Glue evaporates one layer of seed layer Ti, with a thickness ofThen first layer gold is prepared, with a thickness of 0.3um, is removed by stripping technology
The photoresist of reservation, the metal layer in related removal face on a photoresist preliminarily form transmission line, output electrode 13 and switch drop-down
Electrode plate 24；
9) on the high resistant Si substrate 6 that step process obtains in front, one layer is generated by PECVDThick Si3N4It is situated between
Matter layer, photoetching Si3N4Dielectric layer only retains the Si of 21 lower section of air bridges 15 and switch beam3N4Dielectric layer；
10) polyimide sacrificial layer of one layer of 1.6 μ m-thick is deposited, it is desirable that fill up all pits；Photoetching polyimides sacrifice
Layer only retains the polyimide sacrificial layer of 21 lower section of air bridges 15 and switch beam；
11) photoresist is coated, the light at preparation production transmission line, output electrode 13, air bridges 15 and switch beam 21 is removed
Photoresist evaporates one layer of seed layer Ti, with a thickness ofSecond layer gold is prepared, with a thickness of 2um, finally, the photoetching that removal retains
Glue forms transmission line, output electrode 13, air bridges 15 and switch beam 21；
12) in the backside coating photoresist of substrate, removal preparation forms the photoresist at membrane structure 16 in substrate back,
It is etched below 9 hot end of terminal load resistance 8 and thermoelectric pile and Si substrate is thinned, form substrate membrane structure 16, retain about 40 μm
Thick membrane structure；
13) polyimide sacrificial layer is discharged, to remove the polyimide sacrificial layer of 21 lower section of air bridges 15 and switch beam；Most
Afterwards, it impregnates 5 minutes in deionized water, dehydrated alcohol dehydration, volatilizees, dry under room temperature.
Present invention be distinguished in that:
Present invention employs novel slot-coupled structure, this slot-coupled structure can will be propagated in co-planar waveguide
Energy of electromagnetic field be coupled out a part, to detect the frequency of former millimeter-wave signal using the small signal in part that this is coupled out
With phase size, thus the millimeter wave phase-detection under realizing unknown frequency；Power divider and power combiner all use
The structure of Wilkinson power splitter and Wilkinson function clutch realizes dividing equally or synthesizing for power；As for composite signal
Detection, then realize heat to electricity conversion using indirect type thermoelectric (al) type power sensor.These structures not only simplify circuit layout, drop
Low cost of manufacture, and the detection efficiency of millimeter-wave signal is substantially increased, simultaneously because the signal energy and original that are coupled out
Signal influences less former millimeter-wave signal compared to very small, therefore almost, former millimeter-wave signal can continue back-propagation into
The subsequent processing of circuit of row.
The structure for meeting conditions above is considered as silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase of the invention
Bit detector.
Claims (4)
1. a kind of silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors, which is characterized in that the phase-detection
Device is produced on high resistant Si substrate (6), is by co-planar waveguide (3), No.1 slot-coupled structure (5-1), No. two slot-coupled knots
Structure (5-2), No. three slot-coupled structures (5-3), No. four slot-coupled structures (5-4), phase shifter (4), No.1 single-pole double throw are opened
Between pass (19), No. two single-pole double-throw switch (SPDT)s (20), a Wilkinson power splitter, three Wilkinson function clutchs and five
Connect formula thermoelectric (al) type power sensor to be constituted, the connection relationship of specific structure is as follows: first port (1-1) is signal input part,
No.1 slot-coupled structure (5-1) and No. two slot-coupled structures (5-2) are located at ground wire on the upside of co-planar waveguide (3), No. three gaps
Coupled structure (5-3) and No. four slot-coupled structures (5-4) are then located at ground wire on the downside of co-planar waveguide (3), these two pair gap about
Center signal line is symmetrical, is separated between these two pair gap by a phase shifter (4), looks first at frequency detection module (1), No.1
Slot-coupled structure (5-1) is connected to second port (1-2), and second port (1-2) is defeated with No.1 single-pole double-throw switch (SPDT) (19)
Enter end to be connected, the output end of No.1 single-pole double-throw switch (SPDT) (19) is connected respectively to No.1 Wilkinson function clutch and No.1 is indirect
Formula thermoelectric (al) type power sensor, likewise, No. two slot-coupled structures (5-2) are connected to third port (1-3), third port
(1-3) is connected with the input terminal of No. two single-pole double-throw switch (SPDT)s (20), and the output end of No. two single-pole double-throw switch (SPDT)s (20) is separately connected
To No.1 Wilkinson function clutch and No. two indirect type thermoelectric (al) type power sensors, and the output of No.1 Wilkinson function clutch
End is connected to No. three indirect type thermoelectric (al) type power sensors；It sees again phase detecting module (2), No. three slot-coupled structures (5-3)
It is connected with the 4th port (1-4), the 4th port (1-4) is connected to No. two Wilkinson function clutchs, No. four slot-coupled structures
(5-4) is connected with fifth port (1-5), and fifth port (1-5) is connected to No. three Wilkinson function clutchs, and reference signal passes through
The input terminal input of No. four Wilkinson power splitters, the output end of No. four Wilkinson power splitters are connected respectively to No. two
Wilkinson function clutch and No. three Wilkinson function clutchs, then, the output end of No. two Wilkinson function clutchs connect No. four
Indirect type thermoelectric (al) type power sensor, the output end of No. three Wilkinson function clutchs connect No. five indirect type thermoelectric (al) type power and pass
Sensor is connected to subsequent process circuit at the 6th port (1-6).
2. silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors as described in claim 1, feature exist
In No.1 single-pole double-throw switch (SPDT) (19) and No. two single-pole double-throw switch (SPDT)s (20) are by co-planar waveguide (3), anchoring area (22), Si3N4It is situated between
What matter layer (23), switch pull-down electrode plate (24) and switch beam (21) formed, co-planar waveguide (3) is connected on anchoring area (22), anchor
Area (22) is connected with the switch beam (21) in two different branch, wherein a branch connects indirect type thermoelectric (al) type power sensing
Device, the input terminal of another branch connection Wilkinson function clutch, there is one layer of the air gap below switch beam (21),
It is mounted with switch pull-down electrode plate (24) in this air gap, and is also covered with one layer on switch pull-down electrode plate (24)
Si3N4Dielectric layer (23).
3. silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors as described in claim 1, feature exist
Be in, the structure of Wilkinson power splitter and Wilkinson function clutch it is identical, mainly by co-planar waveguide (3), asymmetric total
Face band line (14) and resistance (5) are constituted, and resistance (8) is located at the end of two asymmetrical coplanar striplines (14).
4. silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors as described in claim 1, feature exist
In, heat to electricity conversion is realized using indirect type thermoelectric (al) type power sensor, it mainly by co-planar waveguide (3), two resistance (8) with
And thermoelectric pile (9) is constituted, and thermoelectric pile (9) is to be connect by P-type semiconductor arm (10) and N-type semiconductor arm (11) by ohm
(12) cascade composition is touched, wherein co-planar waveguide (3) is connected with two resistance (8), and has one between thermoelectric pile (9) and resistance (8)
Section interval.
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