CN106841775B - The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction - Google Patents
The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
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Abstract
The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention is made of coplanar waveguide transmission line, slot-coupled structure, phase shifter, single-pole double-throw switch (SPDT), T junction power splitter, T junction function clutch and indirect type thermoelectric (al) type power sensor, it is made based on high resistant Si substrate, there are four slot-coupled structures thereon, two slot-coupled structures of top realize the frequency measurement of signal, two slot-coupled structures of lower section realize the phase measurement of signal, there is a phase shifter between the gap of front and back；T junction power splitter and T junction function clutch are made of coplanar waveguide transmission line, sector-shaped defect structure and air bridges；Indirect type thermoelectric (al) type power sensor is made of coplanar waveguide transmission line, terminal resistance and thermoelectric pile, and thermoelectric pile is made of the cascade of two different semiconductor arms.These structures can integrate frequency, phase and power detection, substantially increase the efficiency of signal detector.
Description
Technical field
The invention proposes the indirect type millimeter-wave signal detectors of silicon substrate slot-coupled formula T junction, belong to microelectronics machine
The technical field of tool system (MEMS).
Background technique
It is also higher and higher to the testing requirements of signal with the continuous development of information science technology, both require signal detection
Device structure is simple, low in cost, it is also necessary to guarantee high precision, this proposes no small challenge to the detection of signal.Many institute's weeks
Know, it is accurate to determine that a signal needs three big parameters: frequency, phase and power, therefore be one to the measurement of these three parameters
Very important task, it may be said that have extraordinary potential using value in fields such as aerospace, microwave communications, in low frequency
Rate stage, people have studied the test structure of these three parameters rather deep, and various signal detectors are
It is well positioned to meet the demand of people, but in high band, is especially located in millimeter wave frequency band, existing frequency detecting
Not only structure is complicated for device, phase detectors and power detector, volume is larger, higher cost, but also is difficult them efficiently
Integrate, additionally, due to millimeter wave frequency band is in, each signal detector certainly will all be made very small, as fruit structure compared with
For complexity, various unnecessary high-frequency effects may be caused.
To solve the above-mentioned problems, with slot-coupled structure, T junction power splitter, the T junction function clutch to co-planar waveguide
And the further investigation of indirect type thermoelectric (al) type power sensor, the present invention devise a kind of by millimeter wave frequency on high resistant Si substrate
The signal detector that rate, phase and power detection integrate, this signal detector using slot-coupled structure is not only
Structure is simple and novel, and cost of manufacture is lower, millimeter wave frequency band can efficient monitoring signals parameters, have compared with
High application value.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of indirect type millimeter-wave signals of silicon substrate slot-coupled formula T junction
Detector, present invention employs co-planar waveguide slot-coupled structures, and T-type is then used in terms of power distribution and power combing
Power splitter and T junction function clutch structure are tied, indirect type thermoelectric (al) type power sensor is used in terms of power detection, these three knots
Structure can be integrated effectively, to reach the precise measurement of the frequency to millimeter-wave signal, phase and power, be mentioned significantly
High detection efficiency.
Technical solution: the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention is produced on height
It hinders on Si substrate, is identical by coplanar waveguide transmission line, the identical slot-coupled structure of four sizes, phase shifter, two sizes
Single-pole double-throw switch (SPDT), a T junction power splitter, three T junction function clutchs and six indirect type thermoelectric (al) type power sensors
Constituted, the connection relationship of specific structure is as follows: first port is signal input part, No.1 slot-coupled structure and No. two gaps
Coupled structure is located at ground wire on the upside of coplanar waveguide transmission line, and No. three slot-coupled structures and No. four slot-coupled structures are then located at altogether
Ground wire on the downside of coplanar waveguide transmission line, these two pair gap is symmetrical about center signal line, is separated between them by a phase shifter, first
See that frequency detection module, No.1 slot-coupled structure are connected to second port, second port and No.1 single-pole double-throw switch (SPDT) first
Input terminal be connected, the output end of No.1 single-pole double-throw switch (SPDT) is connected respectively to No.1 T junction function clutch and No.1 indirect type heat
Electric-type power sensor, likewise, No. two slot-coupled knots are connected to third port, third port and No. two single-pole double-throw switch (SPDT)s
Input terminal be connected, the output end of No. two single-pole double-throw switch (SPDT)s is connected respectively to No.1 T junction function clutch and No. two indirect type heat
Electric-type power sensor, and the output end of No.1 T junction function clutch is connected to No. three indirect type thermoelectric (al) type power sensors；It sees again
Phase detecting module, No. three slot-coupled structures are connected with the 4th port, and the 4th port is connected to No. two T junction function clutchs, and four
Number slot-coupled structure is connected with fifth port, and fifth port is connected to No. three T junction function clutchs, and reference signal passes through No. four T
The input terminal of type knot power splitter inputs, and the output end of No. four T junction power splitters is connected respectively to No. two T junction function clutchs and No. three
T junction function clutch, then, the output end of No. two T junction function clutchs connect No. four indirect type thermoelectric (al) type power sensors, No. three T
The output end of type knot function clutch connects No. five indirect type thermoelectric (al) type power sensors, is finally power detection module, at the 6th end
No. six indirect type thermoelectric (al) type power sensors are connected at mouthful.
When millimeter-wave signal uploads sowing time in coplanar waveguide transmission line, the slot-coupled structure on co-planar waveguide can be coupled
The electromagnetic field signal of fraction out, the small signal that this part is coupled out possess phase and frequency identical with original signal, therefore
The frequency and phase of signal can be detected by certain circuits, further, since the signal energy that slot-coupled comes out is smaller, greatly
Partial signal still will continue to detect power finally by indirect type power sensor by co-planar waveguide back-propagation
Size.Firstly, for the frequency detection module of millimeter wave, it is small out that millimeter-wave signal first passes around No.1 slot-coupled structure Coupling
Partial signal P1, then go out the signal P of part by No. two slot-coupled structure Couplings again after one section of phase shifter2, in this way
Certain phase difference is just produced between two coupled signalsActually this section of phase shifter is exactly one section of coplanar waveguide transmission line,
Its length is set as with centre frequency f0It is 1/4 of wavelength at 35GHz, phase difference at this timeIt is exactly 90 °, but when frequency f becomes
When change, phase differenceIt is the function of frequency f:
Wherein f is the frequency of millimeter-wave signal, and c is the light velocity, εerFor the relative dielectric constant of transmission line, Δ L is phase shifter
Length.As long as therefore measuringValue, the size of frequency f can be obtained, then by two coupled signal P1、P2By No.1 T
Type knot function clutch is synthesized, then goes detection composite signal power P with No. three indirect type thermoelectric (al) type power sensorssSize,
The power P of composite signalsIt is about phase differenceTrigonometric function relationship:
Due to coupled signal P1、P2Size it is unknown, therefore two single-pole double-throw switch (SPDT)s are employed herein and are coupled out two
The small signaling rate come first carries out power detection, obtains its watt level, then carries out power conjunction by No.1 T junction function clutch again
At can then calculate the size of frequency f by formula (2).Pay attention to phase difference hereOnly between two small signals of coupling
Phase difference, be not the phase Φ of former millimeter-wave signal, it is also necessary to which former millimeter wave is determined come accurate by phase detecting module
The phase Φ of signal.
For the phase detecting module of millimeter wave, similarly and by No. three slot-coupled structures and No. four slot-coupled knots
Structure is coupled out the small signal P in part3And P4, since gap size is identical, so the coupling that their watt level measures before being equal to
Close small signal P1And P2, their initial phase is all Φ, after by phase shifter, No. four slot-coupled signals and No. three seams
There is phase difference between gap coupled signalReference signal PcIt is the same that left and right two-way is resolved by No. four T junction power splitters
Signal, signal and No. three slot-coupled signals carry out power combings all the way on the left side, obtain synthesis power PL, it is about phase
The trigonometric function relationship of Φ；And signal and No. four slot-coupled signals carry out power combing all the way on the right, obtain synthesis power PR,
It is about phaseTrigonometric function relationship:
Wherein P3=P1、P4=P2, in conjunction with the two relational expressions, not only the size of available phase Φ, can also be obtained
The advanced or lagged relationship of phase, realizes -180 °~+180 ° of phase-detection.
The utility model has the advantages that in the present invention, in order to integrate frequency detecting, phase-detection and power detection, using
The millimeter-wave signal of fraction can be coupled out by simple and novel slot-coupled structure, this structure, and utilize this part
Coupled signal realizes frequency and phase-detection, and most signal can continue to propagate on co-planar waveguide and carry out power
Detection, wherein using T junction power splitter and T junction function clutch structure, power detector is then used for power splitter and function clutch
Indirect type thermoelectric (al) type power sensor, these structures very effective can integrate, and greatly improve signal detection
Efficiency, not only simplify circuit layout, and frequency, phase and power detection are integrated, substantially increase signal
The efficiency of detector, potential using value with higher.
Detailed description of the invention
Fig. 1 is the schematic diagram of the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention,
Fig. 2 is that single-pole double throw is opened in the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention
The top view of pass,
Fig. 3 is that single-pole double throw is opened in the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention
The sectional view in the direction AA ' is closed,
Fig. 4 is T junction power splitter in the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention
With the top view of T junction function clutch,
Fig. 5 is indirect type thermoelectricity in the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention
The top view of formula power sensor,
Fig. 6 is indirect type thermoelectricity in the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention
The sectional view of formula power sensor,
It include: high resistant Si substrate 1, SiO in figure2Layer 2, coplanar waveguide transmission line 3, No.1 slot-coupled structure 4-1, No. two
Slot-coupled structure 4-2, No. three slot-coupled structure 4-3, No. four slot-coupled structure 4-4, phase shifter 5, frequency detection module
6, phase detecting module 7, power detection module 8, terminal resistance 9, P-type semiconductor arm 10, N-type semiconductor arm 11, Ohmic contact
12, thermoelectric pile 13, output electrode 14, sector-shaped defect structure 15, air bridges 16, substrate membrane structure 17, hot end 18, cold end 19, one
Number single-pole double-throw switch (SPDT) 20, No. two single-pole double-throw switch (SPDT)s 21, anchoring area 22, Si3N4Dielectric layer 23 switchs pull-down electrode plate 24, switch
Beam 25, first port 1-1, second port 1-2, third port 1-3, the 4th port 1-4, fifth port 1-5, the 6th port 1-6.
Specific embodiment
The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention, signal detector production
On high resistant Si substrate 1, be by coplanar waveguide transmission line 3, No.1 slot-coupled structure 4-1, No. two slot-coupled structure 4-2,
20, No. two No. three slot-coupled structure 4-3, No. four slot-coupled structure 4-4, phase shifter 5, No.1 single-pole double-throw switch (SPDT) hilted broadswords are double
21, T junction power splitters of throw switch, three T junction function clutchs and six indirect type thermoelectric (al) type power sensors are constituted.
Single-pole double-throw switch (SPDT) 20 is by coplanar waveguide transmission line 3, anchoring area 22, Si3N4Dielectric layer 23, switch pull-down electrode plate
24 and switch beam 25 form, coplanar waveguide transmission line 3 is connected in anchoring area 22, the switch in anchoring area 22 and two different branch
Beam 25 is connected, wherein branch connects indirect type thermoelectric (al) type power sensor, another branch connecting T-shaped knot function clutch
Input terminal, there is one layer of the air gaps for 25 lower section of switch beam, and switch pull-down electrode plate 24 is mounted in this air gap,
And one layer of Si is also covered on switch pull-down electrode plate 253N4Dielectric layer 23.
The structure of T junction power splitter and T junction function clutch be it is identical, mainly by 3, two sectors of coplanar waveguide transmission line
Defect sturcture 15 and three air bridges 17 are constituted, and sector-shaped defect structure 15 is lacking for the fan shape at two input ports
Ground structure is fallen into, and air bridges 17 are the girder constructions above center signal line.
Heat to electricity conversion is realized using indirect type thermoelectric (al) type power sensor, it is mainly by coplanar waveguide transmission line 3, two
Terminal resistance 9 and thermoelectric pile 13 are constituted, and thermoelectric pile 13 is passed through by P-type semiconductor arm 10 and N-type semiconductor arm 11
The cascade composition of Ohmic contact 12, wherein coplanar waveguide transmission line 3 is connected with two terminal resistances 9, and thermoelectric pile 13 and terminal electricity
There is one section of interval between resistance 9；Terminal resistance absorbs the heat issued after energy and will be absorbed by the hot end of thermoelectric pile, thermoelectric pile
Therefore hot end and cold end can generate the temperature difference, can obtain the value of thermoelectrical potential, it should be noted that according to seebeck effect for heat
Pile preferably absorbs thermal energy, can be by substrate thinning below terminal resistance and thermoelectric pile, and such thermal energy would not be consumed from substrate
It dissipates, to improve conversion efficiency of thermoelectric.
Specific structure scheme is as follows: first port 1-1 is signal input part, No.1 slot-coupled structure 4-1 and No. two seams
Gap coupled structure 4-2 is located at 3 upside ground wire of coplanar waveguide transmission line, No. three slot-coupled structure 4-3 and No. four slot-coupled knots
Structure 4-4 is then located at 3 downside ground wire of coplanar waveguide transmission line, and these two pair gap is symmetrical about center signal line, by one between them
A phase shifter 5 separates, and looks first at frequency detection module 6, and No.1 slot-coupled structure 4-1 is connected to second port 1-2, and second
Port 1-2 is connected with the input terminal of No.1 single-pole double-throw switch (SPDT) 20, and the output end of No.1 single-pole double-throw switch (SPDT) 20 is connected respectively to
No.1 T junction function clutch and No.1 indirect type thermoelectric (al) type power sensor, likewise, No. two slot-coupled structure 4-2 are connected to
Third port 1-3, third port 1-3 are connected with the input terminal of No. two single-pole double-throw switch (SPDT)s 21, No. two single-pole double-throw switch (SPDT)s 21
Output end is connected respectively to No.1 T junction function clutch and No. two indirect type thermoelectric (al) type power sensors, and No.1 T junction function clutch
Output end be connected to No. three indirect type thermoelectric (al) type power sensors；Phase detecting module 7, No. three slot-coupled structure 4- are seen again
3 are connected with the 4th port 1-4, and the 4th port 1-4 is connected to No. two T junction function clutchs, No. four slot-coupled structure 4-4 and the 5th
Port 1-5 is connected, and fifth port 1-5 is connected to No. three T junction function clutchs, and reference signal passes through the defeated of No. four T junction power splitters
Enter end input, the output end of No. four T junction power splitters is connected respectively to No. two T junction function clutchs and No. three T junction function clutchs, so
Afterwards, the output end of No. two T junction function clutchs connects No. four indirect type thermoelectric (al) type power sensors, No. three T junction function clutchs it is defeated
Outlet connects No. five indirect type thermoelectric (al) type power sensors, is finally power detection module 8, is connected at the 6th port 1-6
No. six indirect type thermoelectric (al) type power sensors.
The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention the preparation method comprises the following steps:
1) prepare high resistant Si substrate 1 (4000 Ω cm), with a thickness of 400um；
2) one layer of SiO of thermal oxide growth2Layer 2, with a thickness of 1.2um；
3) one layer of polysilicon is deposited, P-type ion injects (doping concentration 1015cm-2), to reach production terminal resistance 9
It is required that.
4) P-type ion injection is carried out again using place of the mask 1 to thermoelectric pile P-type semiconductor arm 10 to be made, reach
To the resistivity requirement of P-type semiconductor arm 10；
5) N-type ion injection is carried out using place of the mask 2 to thermoelectric pile N-type semiconductor arm 11 to be made, reaches N-type
The resistivity requirement of semiconductor arm 11；
6) photoresist is coated, photoetching is carried out to polysilicon layer, the p-type for ultimately forming terminal resistance 9 and thermoelectric pile 13 is partly led
Body arm 10 and N-type semiconductor arm 11；
7) Ohmic contact 12 is made in the P-type semiconductor arm 10 of thermoelectric pile and 11 junction of N-type semiconductor arm；
8) photoresist, the photoetching at removal transmission line, output electrode 14 and switch pull-down electrode plate 24 are coated on substrate
Glue evaporates one layer of seed layer Ti, with a thickness ofThen first layer gold is prepared, with a thickness of 0.3um, is removed by stripping technology
The photoresist of reservation, the metal layer in related removal face on a photoresist preliminarily form transmission line, output electrode 14 and switch drop-down
Electrode plate 24；
9) on the Si substrate 1 that step process obtains in front, one layer is generated by PECVDThick Si3N4Dielectric layer
23, photoetching Si3N4Dielectric layer only retains the Si of 25 lower section of air bridges 16 and switch beam3N4Dielectric layer 23；
10) polyimide sacrificial layer of one layer of 1.6 μ m-thick is deposited, it is desirable that fill up all pits；Photoetching polyimides sacrifice
Layer only retains the polyimide sacrificial layer of 25 lower section of air bridges 16 and switch beam；
11) photoresist is coated, the light of preparation production transmission line, output electrode 14 and air bridges 16 and switch beam 25 is removed
Photoresist evaporates one layer of seed layer Ti, with a thickness ofSecond layer gold is prepared, with a thickness of 2um, finally, the photoetching that removal retains
Glue forms transmission line, output electrode 14, air bridges 16 and switch beam 25；
12) in the backside coating photoresist of substrate, removal preparation forms the photoetching in 17 place of membrane structure in substrate back
Glue etches below 13 hot end of terminal load resistance 9 and thermoelectric pile and Si substrate is thinned, and forms substrate membrane structure 17, and reservation is about
The membrane structure of 40 μ m-thicks；
13) polyimide sacrificial layer is discharged, to remove the polyimide sacrificial layer of 25 lower section of air bridges 16 and switch beam；Most
Afterwards, it impregnates 5 minutes in deionized water, dehydrated alcohol dehydration, volatilizees, dry under room temperature.
Present invention be distinguished in that:
Present invention employs novel slot-coupled structure, this slot-coupled structure can will be propagated in co-planar waveguide
Energy of electromagnetic field be coupled out a part, to detect the frequency of former millimeter-wave signal using the small signal in part that this is coupled out
With phase size；Power divider and power combiner use the structure of T junction power splitter and T junction function clutch all to realize function
Rate is divided equally or is synthesized；Heat to electricity conversion is realized using indirect type thermoelectric (al) type power sensor, to measure the size of power.This
A little structures not only simplify circuit layout, reduce the production cost, and substantially increase the detection efficiency of millimeter-wave signal, real
The frequency, phase and power for having showed millimeter-wave signal realize integration detection, simultaneously because the signal energy and original that are coupled out
Signal is compared to very small therefore almost little on the influence of former millimeter-wave signal.
The structure for meeting conditions above is considered as the indirect type millimeter-wave signal of silicon substrate slot-coupled formula T junction of the invention
Detector.
Claims (4)
1. a kind of indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction, which is characterized in that the signal detector
It is produced on high resistant Si substrate (1), is by coplanar waveguide transmission line (3), No.1 slot-coupled structure (4-1), No. two gap couplings
Close structure (4-2), No. three slot-coupled structures (4-3), No. four slot-coupled structures (4-4), phase shifter (5), No.1 hilted broadsword pair
Throw switch (20), No. two single-pole double-throw switch (SPDT)s (21), a T junction power splitter, three T junction function clutchs and six indirect types
Thermoelectric (al) type power sensor is constituted, and the connection relationship of specific structure is as follows: first port (1-1) is signal input part, No.1
Slot-coupled structure (4-1) and No. two slot-coupled structures (4-2) are located at ground wire on the upside of coplanar waveguide transmission line (3), No. three seams
Gap coupled structure (4-3) and No. four slot-coupled structures (4-4) are then located at ground wire on the downside of coplanar waveguide transmission line (3), these two pair
Gap is symmetrical about center signal line, is separated between these two pair gap by a phase shifter (5), looks first at frequency detection module
(6), No.1 slot-coupled structure (4-1) is connected to second port (1-2), second port (1-2) and No.1 single-pole double-throw switch (SPDT)
(20) input terminal is connected, and the output end of No.1 single-pole double-throw switch (SPDT) (20) is connected respectively to No.1 T junction function clutch and No.1
Indirect type thermoelectric (al) type power sensor, likewise, No. two slot-coupled structures (4-2) are connected to third port (1-3), third end
Mouth (1-3) is connected with the input terminal of No. two single-pole double-throw switch (SPDT)s (21), and the output end of No. two single-pole double-throw switch (SPDT)s (21) connects respectively
It is connected to No.1 T junction function clutch and No. two indirect type thermoelectric (al) type power sensors, and the output end of No.1 T junction function clutch connects
To No. three indirect type thermoelectric (al) type power sensors；It sees again phase detecting module (7), No. three slot-coupled structures (4-3) and the 4th
Port (1-4) is connected, and the 4th port (1-4) is connected to No. two T junction function clutchs, No. four slot-coupled structures (4-4) and the 5th
Port (1-5) is connected, and fifth port (1-5) is connected to No. three T junction function clutchs, and reference signal passes through No. four T junction power splitters
Input terminal input, the output end of No. four T junction power splitters is connected respectively to No. two T junction function clutchs and No. three T junction function close
Device, then, the output end of No. two T junction function clutchs connect No. four indirect type thermoelectric (al) type power sensors, No. three T junction function clutchs
Output end connect No. five indirect type thermoelectric (al) type power sensors, be finally power detection module (8), in the 6th port (1-6)
Place is connected to No. six indirect type thermoelectric (al) type power sensors.
2. the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction as described in claim 1, feature exist
In, No.1 single-pole double-throw switch (SPDT) (20) and No. two single-pole double-throw switch (SPDT)s (21) be by coplanar waveguide transmission line (3), anchoring area (22),
Si3N4What dielectric layer (23), switch pull-down electrode plate (24) and switch beam (25) formed, coplanar waveguide transmission line (3) is connected to anchor
In area (22), anchoring area (22) is connected with the switch beam (25) in two different branch, wherein a branch connection indirect type heat
Electric-type power sensor, the input terminal of another branch connecting T-shaped knot function clutch, there is one layer of air for switch beam (25) lower section
Gap is mounted with switch pull-down electrode plate (24) in this air gap, and also covers on switch pull-down electrode plate (24)
One layer of Si3N4Dielectric layer (23).
3. the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction as described in claim 1, feature exist
Be in, the structure of T junction power splitter and T junction function clutch it is identical, mainly lacked by coplanar waveguide transmission line (3), two sectors
It falls into structure (15) and three air bridges (17) is constituted, sector-shaped defect structure (15) is the fan shape at two input ports
Defect ground structure, and air bridges (17) are the girder constructions above the center signal line.
4. the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction as described in claim 1, feature exist
In realizing heat to electricity conversion using indirect type thermoelectric (al) type power sensor, it is mainly by coplanar waveguide transmission line (3), two ends
End resistance (9) and thermoelectric pile (13) are constituted, and thermoelectric pile (13) is by P-type semiconductor arm (10) and N-type semiconductor arm
(11) by Ohmic contact (12) cascade composition, wherein coplanar waveguide transmission line (3) is connected with two terminal resistances (9), and hot
There is one section of interval between pile (13) and terminal resistance (9).
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