CN106645921B - The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction - Google Patents
The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction Download PDFInfo
- Publication number
- CN106645921B CN106645921B CN201710052714.0A CN201710052714A CN106645921B CN 106645921 B CN106645921 B CN 106645921B CN 201710052714 A CN201710052714 A CN 201710052714A CN 106645921 B CN106645921 B CN 106645921B
- Authority
- CN
- China
- Prior art keywords
- junction
- slot
- type
- direct
- coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention is made of coplanar waveguide transmission line, slot-coupled structure, phase shifter, single-pole double-throw switch (SPDT), T junction power splitter, T junction function clutch and direct-type thermoelectric (al) type power sensor, the structure is produced on high resistant Si substrate, there are four slot-coupled structures thereon, two slot-coupled structures of top realize the frequency measurement of signal, two slot-coupled structures of lower section realize the phase measurement of signal, there is a phase shifter between the gap of front and back；T junction power splitter and T junction function clutch are mainly made of coplanar waveguide transmission line, sector-shaped defect structure and air bridges；Direct-type thermoelectric (al) type power sensor is made of coplanar waveguide transmission line, thermocouple and capacitance, and thermocouple is composed in series by metal arm and semiconductor arm, it is able to carry out self-heating and completes heat to electricity conversion.These structures can integrate frequency, phase and power detection, substantially increase the efficiency of signal detector.
Description
Technical field
The invention proposes the direct-type millimeter-wave signal detectors of silicon substrate slot-coupled formula T junction, belong to microelectronics machine
The technical field of tool system (MEMS).
Background technique
21st century is the epoch of information science technology, in this epoch, the detection technique of signal be people always
A special kind of skill paid attention to and studied, especially in fields such as current military affairs, communication and aerospaces, to various varied
The detection of signal be a very important task, a signal has three big very important parameters: frequency, phase and function
Rate, low frequency signal, high-frequency signal and extremely high frequency signal can be divided by dividing according to frequency, and wherein millimeter-wave signal is exactly a kind of
The signal of extremely high frequency, it is located at the region that microwave and far infrared wave overlap mutually, at present for the inspection of low frequency signal and high-frequency signal
Survey technology is improved day by day, but there is also problems to the detection technique of the millimeter-wave signal of extremely high frequency, now
Signal detector mostly can only frequency, phase and power etc. to signal individually measured, integrated level is not very high, and
And their structure is all complex, has many high-frequency effects, is affected by these problems, the detection skill of millimeter-wave signal
Art is unable to get always effective improve and development.
With to co-planar waveguide slot-coupled structure, T junction power splitter, T junction function clutch and direct-type thermoelectric (al) type function
The further investigation of rate sensor, the present invention devise a kind of by millimeter-wave frequency, phase and power detection on high resistant Si substrate
The signal detector integrated, this signal detector structure is simple, and cost of manufacture is lower, solves current millimeter wave frequency
The problems of segment signal detector.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of direct-type millimeter-wave signals of silicon substrate slot-coupled formula T junction
Detector, present invention employs co-planar waveguide slot-coupled structures to solve signal frequency detection, phase-detection and power detection
Integrated problem, in terms of power distribution and power combing then use T junction power splitter and T junction function clutch structure,
Direct-type thermoelectric (al) type power sensor is used in terms of power detection, these three structures can be integrated efficiently and be surveyed
Amount has laid solid firm foundations for the detection of millimeter-wave signal.
Technical solution: the direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention is produced on height
It hinders on Si substrate, is identical by coplanar waveguide transmission line, the identical slot-coupled structure of four sizes, phase shifter, two sizes
Single-pole double-throw switch (SPDT), a T junction power splitter, three T junction function clutchs and six direct-type thermoelectric (al) type power sensors
Constituted, the connection relationship of specific structure is as follows: first port is signal input part, No.1 slot-coupled structure and No. two gaps
Coupled structure is located at ground wire on the upside of coplanar waveguide transmission line, and No. three slot-coupled structures and No. four slot-coupled structures are then located at altogether
Ground wire on the downside of coplanar waveguide transmission line, these two pair gap is symmetrical about center signal line, is separated between them by a phase shifter, first
See that frequency detection module, No.1 slot-coupled structure are connected to second port, second port and No.1 single-pole double-throw switch (SPDT) first
Input terminal be connected, the output end of No.1 single-pole double-throw switch (SPDT) is connected respectively to No.1 T junction function clutch and No.1 direct-type heat
Electric-type power sensor, likewise, No. two slot-coupled knots are connected to third port, third port and No. two single-pole double-throw switch (SPDT)s
Input terminal be connected, the output end of No. two single-pole double-throw switch (SPDT)s is connected respectively to No.1 T junction function clutch and No. two direct-type heat
Electric-type power sensor, and the output end of No.1 T junction function clutch is connected to No. three direct-type thermoelectric (al) type power sensors；It sees again
Phase detecting module, No. three slot-coupled structures are connected with the 4th port, and the 4th port is connected to No. two T junction function clutchs, and four
Number slot-coupled structure is connected with fifth port, and fifth port is connected to No. three T junction function clutchs, and reference signal passes through No. four T
The input terminal of type knot power splitter inputs, and the output end of No. four T junction power splitters is connected respectively to No. two T junction function clutchs and No. three
T junction function clutch, then, the output end of No. two T junction function clutchs connect No. four direct-type thermoelectric (al) type power sensors, No. three T
The output end of type knot function clutch connects No. five direct-type thermoelectric (al) type power sensors, is finally power detection module, at the 6th end
No. six direct-type thermoelectric (al) type power sensors are connected at mouthful.
When millimeter-wave signal uploads sowing time in coplanar waveguide transmission line, the slot-coupled structure on co-planar waveguide can be coupled
The electromagnetic field signal of fraction out, the small signal that this part is coupled out possess phase and frequency identical with original signal, therefore
The frequency and phase of signal can be detected by certain circuits, further, since the signal energy that slot-coupled comes out is smaller, greatly
Partial signal still will continue to detect power finally by direct-type power sensor by co-planar waveguide back-propagation
Size.Firstly, for the frequency detection module of millimeter wave, it mainly by above co-planar waveguide two slot-coupled structures,
One section of phase shifter, two single-pole double-throw switch (SPDT)s, a T junction function clutch and a direct-type thermoelectric (al) type power sensor institute structure
At millimeter-wave signal first passes around the signal P that first slot-coupled structure Coupling goes out fraction1, then pass through a Duan Yixiang
Go out the signal P of part after device by another slot-coupled structure Coupling again2, one is just produced between two such coupled signal
Fixed phase differenceActually this section of phase shifter is exactly one section of coplanar waveguide transmission line, its length is set as with centre frequency f0
It is 1/4 of wavelength at 35GHz, phase difference at this timeIt is exactly 90 °, but when frequency f variation, phase differenceIt is the letter of frequency f
Number:
Wherein f is the frequency of millimeter-wave signal, and c is the light velocity, εerFor the relative dielectric constant of transmission line, Δ L is phase shifter
Length, as long as therefore measuringValue, the size of frequency f can be obtained.Then by two coupled signal P1、P2By T junction
Function clutch is synthesized, then goes detection composite signal power P with direct-type power sensorsSize, the power P of composite signals
It is about phase differenceTrigonometric function relationship:
Due to coupled signal P1、P2Size it is unknown, therefore two single-pole double-throw switch (SPDT)s are employed herein and are coupled out two
The small signaling rate come first carries out power detection, obtains its watt level, then carries out power combing by T junction function clutch again,
Then the size of frequency f can be calculated by formula (2).Pay attention to phase difference hereOnly between two small signals of coupling
Phase difference is not the phase Φ of former millimeter-wave signal, it is also necessary to determine former millimeter wave letter by phase detecting module come accurate
Number phase Φ.
For the phase detecting module of millimeter wave, similarly and by two slot-coupled structure Couplings go out the small signal in part
P3And P4, since gap size is identical, so the small signal P of coupling that their watt level measures before being equal to1And P2, they
Initial phase be all Φ, only wherein second slot-coupled signal has propagated phase moreReference signal PcBy T junction
Power splitter resolves into the signal of left and right two-way striking resemblances, and signal and first slot-coupled signal carry out power conjunction all the way on the left side
At, obtain synthesis power PL, it is the trigonometric function relationship about phase Φ；And the right signal and second slot-coupled all the way
Signal carries out power combing, obtains synthesis power PR, it is about phaseTrigonometric function relationship；
Wherein P3=P1、P4=P2, in conjunction with the two relational expressions, not only the size of available phase Φ, can also be obtained
The advanced or lagged relationship of phase, realizes -180 °~+180 ° of phase-detection.
The utility model has the advantages that in the present invention, using simple and novel slot-coupled structure, this slot-coupled structure can
The energy of electromagnetic field propagated in co-planar waveguide is coupled out fraction, detects former millimeter wave using the small signal that this is coupled out
The frequency and phase size of signal, thus the very good solution frequency of millimeter-wave signal, phase and power detection is integrated
Change, simultaneously because the signal energy being coupled out is very small, therefore almost former millimeter-wave signal is influenced less, former millimeter-wave signal
It can continue back-propagation and carry out power measurement, the direct-type millimeter-wave signal inspection of silicon substrate slot-coupled formula T junction of the invention
It surveys device and uses the simple and novel slot-coupled structure of structure, frequency, phase and power detection is integrated together, it mentions significantly
The high efficiency of signal detector, potential using value with higher.
Detailed description of the invention
Fig. 1 is the top view of the direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention
Fig. 2 is that single-pole double throw is opened in the direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention
The top view of pass
Fig. 3 is that single-pole double throw is opened in the direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention
Close the sectional view in the direction AA '
Fig. 4 is T junction power splitter in the direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention
With the top view of T junction function clutch
Fig. 5 is direct-type thermoelectricity in the direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention
The top view of formula power sensor
Fig. 6 is direct-type thermoelectricity in the direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention
The sectional view in the direction formula power sensor AA'
Fig. 7 is direct-type thermoelectricity in the direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention
The sectional view in the direction formula power sensor BB'
It include: frequency detection module 1, phase detecting module 2, power detection module 3, coplanar waveguide transmission line 4, seam in figure
Gap coupled structure 5-1, slot-coupled structure 5-2, slot-coupled structure 5-3, slot-coupled structure 5-4, phase shifter 6, high resistant Si
Substrate 7, silicon dioxide layer 8, sector-shaped defect structure 9, air bridges 10, metal arm 11, semiconductor arm 12, Ohmic contact 13, hot end
14, cold end 15, output electrode 16, capacitance 17, capacitance bottom crown 18, Si3N4Dielectric layer 19, capacitance top crown
20, substrate membrane structure 21, No.1 single-pole double-throw switch (SPDT) 22, No. two single-pole double-throw switch (SPDT)s 23, switch beam 24, anchoring area 25, under switch
Pulling electrode plate 26, first port 1-1, second port 1-2, third port 1-3, the 4th port 1-4, fifth port 1-5, the 6th end
Mouth 1-6.
Specific embodiment
The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention, signal detector production
On high resistant Si substrate 7, be by coplanar waveguide transmission line 4, No.1 slot-coupled structure 5-1, No. two slot-coupled structure 5-2,
22, No. two No. three slot-coupled structure 5-3, No. four slot-coupled structure 5-4, phase shifter 6, No.1 single-pole double-throw switch (SPDT) hilted broadswords are double
23, T junction power splitters of throw switch, three T junction function clutchs and six direct-type thermoelectric (al) type power sensors are constituted.
Single-pole double-throw switch (SPDT) 22 is by coplanar waveguide transmission line 4, anchoring area 25, Si3N4Dielectric layer 19, switch pull-down electrode plate
26 and switch beam 24 form, coplanar waveguide transmission line 4 is connected in anchoring area 25, the switch in anchoring area 25 and two different branch
Beam 24 is connected, wherein branch connects direct-type thermoelectric (al) type power sensor, another branch connecting T-shaped knot function clutch
Input terminal, there is one layer of the air gaps for 24 lower section of switch beam, and switch pull-down electrode plate 26 is mounted in this air gap,
And one layer of Si is also covered on switch pull-down electrode plate 263N4Dielectric layer 19.
The structure of T junction power splitter and T junction function clutch be it is identical, mainly by 4, two sectors of coplanar waveguide transmission line
Defect sturcture 9 and three air bridges 10 are constituted, and sector-shaped defect structure 9 is the defect of the fan shape at two input ports
Ground structure, and air bridges 10 are the girder constructions above center signal line.
Heat to electricity conversion is realized using direct-type thermoelectric (al) type power sensor, it is mainly by coplanar waveguide transmission line 4, two
A thermocouple and a capacitance 17 are constituted, wherein each thermocouple is by 12 series connection group of metal arm 11 and semiconductor arm
At because metal arm 11 is actually the terminal resistance as the thermoelectric (al) type power detector, the heat of this direct-type
Electric-type power sensor is a kind of self-heating type power sensor, its two thermocouples are directly connected with signal wire, thermocouple
Intermediate region as hot end, both sides fringe region is as cold end, in this way when the energy of millimeter-wave signal is absorbed by metal arm 11
Afterwards, thermoelectrical potential can be measured according to seebeck effect, it should be noted that can will serve as a contrast at intermediate region, that is, hot end of thermocouple
Bottom is thinned, and such thermal energy would not be dissipated from substrate, the temperature difference of hot end and cold end be increased, to also improve heat to electricity conversion
Efficiency.
Specific structure scheme is as follows: first port 1-1 is signal input part, No.1 slot-coupled structure 5-1 and No. two seams
Gap coupled structure 5-2 is located at 4 upside ground wire of coplanar waveguide transmission line, No. three slot-coupled structure 5-3 and No. four slot-coupled knots
Structure 5-4 is then located at 4 downside ground wire of coplanar waveguide transmission line, and these two pair gap is symmetrical about center signal line, by one between them
A phase shifter 6 separates, and looks first at frequency detection module 1, and No.1 slot-coupled structure 5-1 is connected to second port 1-2, and second
Port 1-2 is connected with the input terminal of No.1 single-pole double-throw switch (SPDT) 22, and the output end of No.1 single-pole double-throw switch (SPDT) 22 is connected respectively to
No.1 T junction function clutch and No.1 direct-type thermoelectric (al) type power sensor, likewise, No. two slot-coupled structure 5-2 are connected to
Third port 1-3, third port 1-3 are connected with the input terminal of No. two single-pole double-throw switch (SPDT)s 23, No. two single-pole double-throw switch (SPDT)s 23
Output end is connected respectively to No.1 T junction function clutch and No. two direct-type thermoelectric (al) type power sensors, and No.1 T junction function clutch
Output end be connected to No. three direct-type thermoelectric (al) type power sensors；Phase detecting module 2, No. three slot-coupled structure 5- are seen again
3 are connected with the 4th port 1-4, and the 4th port 1-4 is connected to No. two T junction function clutchs, No. four slot-coupled structure 5-4 and the 5th
Port 1-5 is connected, and fifth port 1-5 is connected to No. three T junction function clutchs, and reference signal passes through the defeated of No. four T junction power splitters
Enter end input, the output end of No. four T junction power splitters is connected respectively to No. two T junction function clutchs and No. three T junction function clutchs, so
Afterwards, the output end of No. two T junction function clutchs connects No. four direct-type thermoelectric (al) type power sensors, No. three T junction function clutchs it is defeated
Outlet connects No. five direct-type thermoelectric (al) type power sensors, is finally power detection module 3, is connected at the 6th port 1-6
No. six direct-type thermoelectric (al) type power sensors.
The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction of the invention the preparation method comprises the following steps:
1) prepare high resistant Si substrate 7 (4000 Ω cm), with a thickness of 400um；
2) one layer of SiO of thermal oxide growth2Layer 8, with a thickness of 1.2um；
3) one layer of polysilicon is deposited, P-type ion injects (doping concentration 1015cm-2), to reach production thermo-electric metal
The resistivity requirement of arm 11.
4) P-type ion injection is carried out again using place of the mask to thermocouple P-type semiconductor arm 12 to be made, reach
The resistivity requirement of P-type semiconductor arm 12；
5) photoresist is coated, photoetching is carried out to polysilicon layer, ultimately forms the metal arm 11 and P-type semiconductor arm of thermocouple
12；
6) Ohmic contact 13 is made in the metal arm of thermocouple 11 and 12 junction of P-type semiconductor arm；
7) photoresist, removal transmission line, capacitance 17, output electrode 16 and switch pull-down electrode plate are coated on substrate
Photoresist at 26 evaporates one layer of seed layer Ti, with a thickness ofThen first layer gold is prepared, with a thickness of 0.3um, passes through stripping
Photoresist that separating process removal retains, the metal layer in related removal face on a photoresist preliminarily form transmission line, capacitance
Bottom crown 18, output electrode 16 and switch pull-down electrode plate 26；
8) on the Si substrate that step process obtains in front, one layer is generated by PECVDThick Si3N4Dielectric layer,
Photoetching Si3N4Dielectric layer only retains the Si that make at capacitance 17, air bridges 10 and switch beam 243N4Dielectric layer 19；
9) polyimide sacrificial layer of one layer of 1.6 μ m-thick is deposited, it is desirable that fill up all pits；Photoetching polyimides sacrifice
Layer only retains the polyimide sacrificial layer of 24 lower section of air bridges 10 and switch beam；
10) photoresist is coated, preparation production transmission line, capacitance 17, output electrode 16, air bridges 10 and switch are removed
The photoresist of Liang23Chu evaporates one layer of seed layer Ti, with a thickness ofSecond layer gold is prepared, with a thickness of 2um, finally, removal is protected
The photoresist stayed forms transmission line, the top crown 20 of capacitance, output electrode 16, air bridges 10 and switch beam 24；
11) in the backside coating photoresist of substrate, removal preparation forms the photoetching in 21 place of membrane structure in substrate back
Glue etches below thermocouple intermediate region, that is, hot end 13 and Si substrate is thinned, and forms substrate membrane structure 21, and retaining is about 40 μ m-thicks
Membrane structure；
12) polyimide sacrificial layer is discharged, to remove the polyimide sacrificial layer of 24 lower section of air bridges 10 and switch beam；Most
Afterwards, it impregnates 5 minutes in deionized water, dehydrated alcohol dehydration, volatilizees, dry under room temperature.
Present invention be distinguished in that:
Present invention employs novel slot-coupled structure, this slot-coupled structure can will be propagated in co-planar waveguide
Energy of electromagnetic field be coupled out a part, to detect the frequency of former millimeter-wave signal using the small signal in part that this is coupled out
With phase size；Power divider and power combiner realize power using the structure of T junction power splitter and T junction function clutch
Divide equally or synthesize；As for power detector, then heat to electricity conversion is realized using direct-type thermoelectric (al) type power sensor.These knots
Structure is simple and effective, reduces the production cost, while also improving the detection efficiency of millimeter-wave signal, realizes millimeter-wave signal
Frequency, phase and power realize integration detection, additionally due to the signal energy being coupled out compared with original signal it is very small, because
This almost influences less former millimeter-wave signal, and former millimeter-wave signal can continue back-propagation.
The structure for meeting conditions above is considered as the direct-type millimeter-wave signal of silicon substrate slot-coupled formula T junction of the invention
Detector.
Claims (4)
1. a kind of direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction, which is characterized in that the signal detector
It is produced on high resistant Si substrate (7), is by coplanar waveguide transmission line (4), No.1 slot-coupled structure (5-1), No. two gap couplings
Close structure (5-2), No. three slot-coupled structures (5-3), No. four slot-coupled structures (5-4), phase shifter (6), No.1 hilted broadsword pair
Throw switch (22), No. two single-pole double-throw switch (SPDT)s (23), a T junction power splitter, three T junction function clutchs and six direct-type
Thermoelectric (al) type power sensor is constituted, and the connection relationship of specific structure is as follows: first port (1-1) is signal input part, No.1
Slot-coupled structure (5-1) and No. two slot-coupled structures (5-2) are located at ground wire on the upside of coplanar waveguide transmission line (4), No. three seams
Gap coupled structure (5-3) and No. four slot-coupled structures (5-4) are then located at ground wire on the downside of coplanar waveguide transmission line (4), these two pair
Gap is symmetrical about center signal line, is separated between them by a phase shifter (6), for frequency detection module (1), No.1 seam
Gap coupled structure (5-1) is connected to second port (1-2), the input of second port (1-2) and No.1 single-pole double-throw switch (SPDT) (22)
End is connected, and the output end of No.1 single-pole double-throw switch (SPDT) (22) is connected respectively to No.1 T junction function clutch and No.1 direct-type thermoelectricity
Formula power sensor, No. two slot-coupled structures (5-2) are connected to third port (1-3), third port (1-3) and No. two hilted broadswords
The input terminal of commutator (23) is connected, and the output end of No. two single-pole double-throw switch (SPDT)s (23) is connected respectively to the conjunction of No.1 T junction function
Device and No. two direct-type thermoelectric (al) type power sensors, and the output end of No.1 T junction function clutch is connected to No. three direct-type thermoelectricity
Formula power sensor；For phase detecting module (2), No. three slot-coupled structures (5-3) are connected with the 4th port (1-4), the
Four ports (1-4) are connected to No. two T junction function clutchs, and No. four slot-coupled structures (5-4) are connected with fifth port (1-5), the
Five ports (1-5) are connected to No. three T junction function clutchs, and reference signal is inputted by the input terminal of No. four T junction power splitters, and No. four
The output end of T junction power splitter is connected respectively to No. two T junction function clutchs and No. three T junction function clutchs, then, No. two T junctions
The output end of function clutch connects No. four direct-type thermoelectric (al) type power sensors, and the output end of No. three T junction function clutchs connects No. five
Direct-type thermoelectric (al) type power sensor；For power detection module (3), No. six direct-type are connected at the 6th port (1-6)
Thermoelectric (al) type power sensor.
2. the direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction as described in claim 1, feature exist
In single-pole double-throw switch (SPDT) (22) is by coplanar waveguide transmission line (4), anchoring area (25), Si3N4Dielectric layer (19), switch pull-down electrode
What plate (26) and switch beam (24) formed, coplanar waveguide transmission line (4) is connected on anchoring area (25), anchoring area (25) and two differences
The switch beam (24) of branch road is connected, wherein a branch connects direct-type thermoelectric (al) type power sensor, another branch connects
The input terminal of T junction function clutch is connect, switch beam (24) lower section is mounted in this air gap there is one layer of the air gap
It switchs pull-down electrode plate (26), and is also covered with one layer of Si on switch pull-down electrode plate (26)3N4Dielectric layer (19).
3. the direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction as described in claim 1, feature exist
Be in, the structure of T junction power splitter and T junction function clutch it is identical, mainly lacked by coplanar waveguide transmission line (3), two sectors
It falls into structure (15) and three air bridges (17) is constituted, sector-shaped defect structure (15) is the fan shape at two input ports
Defect ground structure, and air bridges (17) are the girder constructions above the center signal line.
4. the direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction as described in claim 1, feature exist
In realizing heat to electricity conversion using direct-type thermoelectric (al) type power sensor, it is mainly by coplanar waveguide transmission line (4), metal arm
(11), P-type semiconductor arm (12) and a capacitance (17) are constituted, wherein metal arm (11) and P-type semiconductor arm (12)
Two thermocouples constituted are connected in parallel, and coplanar waveguide transmission line (4) is directly connected with one end of the two thermocouples.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710052714.0A CN106645921B (en) | 2017-01-24 | 2017-01-24 | The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710052714.0A CN106645921B (en) | 2017-01-24 | 2017-01-24 | The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106645921A CN106645921A (en) | 2017-05-10 |
| CN106645921B true CN106645921B (en) | 2019-03-05 |
Family
ID=58842375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710052714.0A Active CN106645921B (en) | 2017-01-24 | 2017-01-24 | The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106645921B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110460318A (en) * | 2019-07-02 | 2019-11-15 | 四川大学 | A kind of novel injection-locked magnetron power synthetic system based on frequency sweep phase modulation |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101542836A (en) * | 2007-01-24 | 2009-09-23 | 松下电器产业株式会社 | Differential feeding variable directivity slot antenna |
| CN102375090A (en) * | 2011-09-22 | 2012-03-14 | 东南大学 | Micromechanical cantilever beam switch online microwave power detector and manufacturing method thereof |
| CN203310915U (en) * | 2013-06-19 | 2013-11-27 | 东南大学 | Phase detector based on micro mechanical direct thermoelectric power sensor |
| CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
-
2017
- 2017-01-24 CN CN201710052714.0A patent/CN106645921B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101542836A (en) * | 2007-01-24 | 2009-09-23 | 松下电器产业株式会社 | Differential feeding variable directivity slot antenna |
| CN102375090A (en) * | 2011-09-22 | 2012-03-14 | 东南大学 | Micromechanical cantilever beam switch online microwave power detector and manufacturing method thereof |
| CN203310915U (en) * | 2013-06-19 | 2013-11-27 | 东南大学 | Phase detector based on micro mechanical direct thermoelectric power sensor |
| CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 砷化镓基毫米波MEMS开关表面工艺研究;姜理利 等;《固体电子学研究与进展》;20120228;第32卷(第1期);第78-82页 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106645921A (en) | 2017-05-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106645921B (en) | The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction | |
| CN106771581B (en) | The direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula | |
| CN106645923B (en) | The indirect type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula | |
| CN106814260B (en) | The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula | |
| CN106841797B (en) | Silicon substrate unknown frequency slot-coupled formula T junction direct-type millimeter wave phase detectors | |
| CN106841775B (en) | The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula T junction | |
| CN106841799B (en) | The direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction | |
| CN106841800B (en) | Silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors | |
| CN106841791B (en) | Silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors | |
| CN106802370B (en) | Silicon substrate unknown frequency slot-coupled formula indirect type millimeter wave phase detectors | |
| CN106771604B (en) | Silicon substrate given frequency slot-coupled formula T junction indirect type millimeter wave phase detectors | |
| CN106771602B (en) | Silicon substrate given frequency slot-coupled formula T junction direct-type millimeter wave phase detectors | |
| CN106872796B (en) | The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula | |
| CN106698326B (en) | Based on silicon-base micro-mechanical cantilever beam T junction direct-heating type millimeter-wave signal detector | |
| CN106841772B (en) | The indirect type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction | |
| CN106645920B (en) | Clamped beam T junction indirect heating type microwave signal detector | |
| CN106645924B (en) | Silicon substrate given frequency slot-coupled formula indirect type millimeter wave phase detectors | |
| CN106771605B (en) | Silicon substrate unknown frequency slot-coupled formula T junction indirect type millimeter wave phase detectors | |
| CN106841783B (en) | Silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter wave phase detectors | |
| CN106841781B (en) | Online millimeter wave phase detectors are directly heated based on silicon substrate cantilever beam T junction | |
| CN106841802B (en) | Based on the online millimeter wave phase detectors of silicon substrate cantilever beam T junction indirect heating | |
| CN106711164B (en) | Clamped beam indirect heating type microwave signal detector | |
| CN106841785B (en) | Clamped beam directly heats online given frequency microwave phase detector device | |
| CN106841794B (en) | Clamped beam T junction directly heats online given frequency microwave phase detector device | |
| CN106841787B (en) | Clamped beam T junction directly heats online unknown frequency microwave phase detector device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |