CN106872796B - The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula - Google Patents
The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula Download PDFInfo
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- CN106872796B CN106872796B CN201710052677.3A CN201710052677A CN106872796B CN 106872796 B CN106872796 B CN 106872796B CN 201710052677 A CN201710052677 A CN 201710052677A CN 106872796 B CN106872796 B CN 106872796B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
- G01R29/0878—Sensors; antennas; probes; detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
- G01R29/0892—Details related to signal analysis or treatment; presenting results, e.g. displays; measuring specific signal features other than field strength, e.g. polarisation, field modes, phase, envelope, maximum value
Abstract
The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula of the invention is made of co-planar waveguide, slot-coupled structure, phase shifter, single-pole double-throw switch (SPDT), Wilkinson power splitter, Wilkinson function clutch and indirect type thermoelectric (al) type power sensor, total is made based on high resistant Si substrate, there are four slot-coupled structures thereon, two slot-coupled structures of top realize the frequency measurement of signal, two slot-coupled structures of lower section realize the phase measurement of signal, there is a phase shifter between the gap of front and back；Wilkinson power splitter and Wilkinson function clutch are mainly made of co-planar waveguide, asymmetrical coplanar stripline and resistance；Indirect type thermoelectric (al) type power sensor is made of co-planar waveguide, two resistance and thermoelectric pile, and thermoelectric pile is made of two kinds of different semiconductor arm cascades, and the heat that it can be distributed terminal resistance is converted into thermoelectrical potential.These structures can integrate frequency, phase and power detection, substantially increase the efficiency of signal detector.
Description
Technical field
The invention proposes the indirect type millimeter-wave signal detectors of silicon substrate slot-coupled formula, belong to microelectromechanical systems
(MEMS) technical field.
Background technique
It is important research direction that people pay close attention to always to detecting and controlling for signal, especially in current communication system
It is for millimeter wave higher for frequency, and the parameters for how efficiently and easily detecting millimeter-wave signal carry out people
Say to be also the problem for needing to capture.Millimeter-wave signal is gathered around there are three important parameter, respectively frequency, phase and power, this three
The measuring technique of a parameter has a very wide range of applications in the fields such as military, space flight and aviation and microwave communication, therefore in information
Technology increasingly developed today, the high-precision detection to millimeter-wave frequency, phase and power is relationship national economic development and section
The important content of skill innovation.But not only structure is complicated, cost for existing frequency detector, phase detectors and power detector
It is higher, and carry out unified measurement cannot be integrated mostly, to reduce the efficiency to signal parameter detection, therefore pass
The signal detection technique of system cannot achieve the efficient monitoring to millimeter-wave signal.
For the problem of above millimeter-wave signal detection, with to co-planar waveguide slot-coupled structure, Wilkinson function point
The further investigation of device, Wilkinson function clutch and indirect type thermoelectric (al) type power sensor, the present invention are set on high resistant Si substrate
A kind of signal detector for integrating millimeter-wave frequency, phase and power detection has been counted, it is this to utilize slot-coupled knot
The signal detector structure of structure is simple and novel, and cost of manufacture is lower, potential using value with higher.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of detections of the indirect type millimeter-wave signal of silicon substrate slot-coupled formula
Device, within the scope of millimeter wave, the traditional structure of the frequency detecting of signal, phase-detection and power detection is complex, if only
Simply piece together that integrate difficulty larger, and efficiency is also more low, and the present invention just utilizes co-planar waveguide gap coupling
The frequency, phase and power detection of millimeter-wave signal are integrated together with closing features simple structure, are greatly improved the efficiency.
Technical solution: the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula of the invention is produced on high resistant Si lining
It is by co-planar waveguide, No.1 slot-coupled structure, No. two slot-coupled structures, No. three slot-coupled structures, No. four gaps on bottom
Coupled structure, phase shifter, No.1 single-pole double-throw switch (SPDT), No. two single-pole double-throw switch (SPDT)s, a Wilkinson power splitter, three
Wilkinson function clutch and six indirect type thermoelectric (al) type power sensors are constituted, and the connection relationship of specific structure is as follows: the
Single port is signal input part, and No.1 slot-coupled structure and No. two slot-coupled structures are located at ground wire on the upside of co-planar waveguide, three
Number slot-coupled structure and No. four slot-coupled structures are then located at ground wire on the downside of co-planar waveguide, and these two pair gap is about center signal
Line is symmetrical, is separated between them by a phase shifter, looks first at frequency detection module, No.1 slot-coupled structure is connected to
Two-port netwerk, second port are connected with the input terminal of No.1 single-pole double-throw switch (SPDT), and the output end of No.1 single-pole double-throw switch (SPDT) connects respectively
It is connected to No.1 Wilkinson function clutch and No.1 indirect type thermoelectric (al) type power sensor, likewise, No. two slot-coupled structures connect
It is connected to third port, third port is connected with the input terminal of No. two single-pole double-throw switch (SPDT)s, the output end of No. two single-pole double-throw switch (SPDT)s
It is connected respectively to No.1 Wilkinson function clutch and No. two indirect type thermoelectric (al) type power sensors, and No.1 Wilkinson function closes
The output end of device is connected to No. three indirect type thermoelectric (al) type power sensors；Phase detecting module, No. three slot-coupled structures are seen again
It is connected with the 4th port, the 4th port is connected to No. two Wilkinson function clutchs, No. four slot-coupled structures and fifth port phase
Even, fifth port is connected to No. three Wilkinson function clutchs, and reference signal passes through the input terminal of No. four Wilkinson power splitters
Input, the output end of No. four Wilkinson power splitters are connected respectively to No. two Wilkinson function clutchs and No. three Wilkinson
Function clutch, then, the output end No. four indirect type thermoelectric (al) type power sensors of connection of No. two Wilkinson function clutchs, No. three
The output end of Wilkinson function clutch connects No. five indirect type thermoelectric (al) type power sensors, is finally power detection module, the
No. six indirect type thermoelectric (al) type power sensors are connected at six ports.
When millimeter-wave signal uploads sowing time in co-planar waveguide, the slot-coupled structure on co-planar waveguide can be coupled out small portion
The electromagnetic field signal divided, the small signal that this part is coupled out possesses phase and frequency identical with original signal, therefore can lead to
Certain circuits are crossed to detect the frequency and phase of signal, further, since the signal energy that slot-coupled comes out is smaller, it is most
Signal still will continue to detect the size of power finally by indirect type power sensor by co-planar waveguide back-propagation.
Firstly, for the frequency detection module of millimeter wave, it is mainly by two slot-coupled structures, one section of phase shifter, two hilted broadswords
Commutator, a Wilkinson function clutch and three indirect type thermoelectric (al) type power sensors are constituted, and millimeter-wave signal is first
First pass through the signal P that first slot-coupled structure Coupling goes out fraction1, then again by another after one section of phase shifter
Slot-coupled structure Coupling goes out the signal P of another part2, certain phase difference is just produced between two such coupled signal
Actually this section of phase shifter is exactly one section of co-planar waveguide, its length is set as with centre frequency f0It is 1/ of wavelength at 35GHz
4, phase difference at this timeIt is exactly 90 °, but when frequency f variation, phase differenceIt is the function of frequency f, can indicates are as follows:
Wherein f is the frequency of millimeter-wave signal, and c is the light velocity, εerFor the relative dielectric constant of transmission line, Δ L is phase shifter
Length.As long as it can be seen that measuring from formulaValue, the size of frequency f can be obtained, then by two coupled signals
P1、P2It is synthesized by Wilkinson function clutch, then removes detection composite signal power with indirect type thermoelectric (al) type power sensor
PsSize, the power P of composite signalsIt is about phase differenceTrigonometric function relationship:
Due to coupled signal P1、P2Size it is unknown, therefore two single-pole double-throw switch (SPDT)s are employed herein and are coupled out two
The small signaling rate come first carries out power detection, obtains its watt level, then carries out power conjunction by Wilkinson function clutch again
At can then calculate the size of frequency f by formula (2).Pay attention to phase difference hereOnly between two small signals of coupling
Phase difference, be not the phase Φ of former millimeter-wave signal, it is also necessary to which former millimeter wave is determined come accurate by phase detecting module
The phase Φ of signal.
For the phase detecting module of millimeter wave, similarly and by two slot-coupled structure Couplings go out the small signal in part
P3And P4, since gap size is identical, so the small signal P of coupling that their watt level measures before being equal to1And P2, and
Their initial phase is all Φ, and only wherein second slot-coupled signal has propagated phase moreReference signal PcBy
Wilkinson power splitter resolves into the signal of left and right two-way striking resemblances, the left side signal and first slot-coupled signal all the way
Power combing is carried out, synthesis power P is obtainedL, it is the trigonometric function relationship about phase Φ；And the right signal and second all the way
A slot-coupled signal carries out power combing, obtains synthesis power PR, it is about phaseTrigonometric function relationship；
Wherein P3=P1、P4=P2, in conjunction with two above relational expression, not only the size of available phase Φ, can also be obtained
To the advanced or lagged relationship of phase.
The utility model has the advantages that in the present invention, in order to improve the detection efficiency of millimeter-wave signal, by the frequency of millimeter-wave signal,
Phase and power realize integration detection, take simple and novel slot-coupled structure, this slot-coupled structure can
The energy of electromagnetic field propagated in co-planar waveguide is coupled out sub-fraction, to examine using the small signal in part that this is coupled out
Survey the frequency and phase size of former millimeter-wave signal, simultaneously because the signal energy being coupled out compared with original signal it is very small, because
This almost influences less former millimeter-wave signal, and former millimeter-wave signal can continue back-propagation and carry out power measurement, mentions significantly
The high efficiency of signal detector, potential using value with higher.
Detailed description of the invention
Fig. 1 is the top view of the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula of the invention
Fig. 2 is that single-pole double-throw switch (SPDT) is bowed in the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula of the invention
View
Fig. 3 is single-pole double-throw switch (SPDT) AA ' in the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula of the invention
The sectional view in direction
Fig. 4 is Wilkinson power splitter in the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula of the invention
With the top view of Wilkinson function clutch
Fig. 5 is indirect type thermoelectric (al) type power in the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula of the invention
The top view of sensor
Fig. 6 is indirect type thermoelectric (al) type power in the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula of the invention
The sectional view of sensor
It include: co-planar waveguide 1, slot-coupled structure 2-1, slot-coupled structure 2-2, slot-coupled structure 2-3, seam in figure
Gap coupled structure 2-4, phase shifter 3, frequency detection module 4, phase detecting module 5, power detection module 6, resistance 7, p-type is partly led
Body arm 8, N-type semiconductor arm 9, Ohmic contact 10, output electrode 11, thermoelectric pile 12, SiO2Layer 13, high resistant Si substrate 14 is non-right
Claim coplanar striplines 15, air bridges 16, substrate membrane structure 17, hot end 18, cold end 19, No.1 single-pole double-throw switch (SPDT) 20, No. two hilted broadswords
Commutator 21, anchoring area 22, Si3N4Dielectric layer 23 switchs pull-down electrode plate 24, switch beam 25, first port 1-1, second port
1-2, third port 1-3, the 4th port 1-4, fifth port 1-5, the 6th port 1-6.
Specific embodiment
The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula of the invention, the signal detector are produced on high resistant
It is by co-planar waveguide 1, No.1 slot-coupled structure 2-1, No. two slot-coupled structure 2-2, No. three slot-coupleds on Si substrate 14
20, No. two structure 2-3, No. four slot-coupled structure 2-4, phase shifter 3, No.1 single-pole double-throw switch (SPDT) single-pole double-throw switch (SPDT)s 21, one
A Wilkinson power splitter, three Wilkinson function clutchs and six indirect type thermoelectric (al) type power sensors are constituted.
Single-pole double-throw switch (SPDT) 20 is by co-planar waveguide 1, anchoring area 22, Si3N4 dielectric layer 23, switch pull-down electrode plate 24 and to open
Closing what beam 25 formed, co-planar waveguide 1 is connected in anchoring area 22, and anchoring area 22 is connected with the switch beam 25 in two different branch,
Wherein a branch connects indirect type thermoelectric (al) type power sensor, and another branch connects the input terminal of Wilkinson function clutch,
There is one layer of the air gaps for 25 lower section of switch beam, and switch pull-down electrode plate 24 is mounted in this air gap, and are opening
It closes and is also covered with one layer of Si3N4 dielectric layer 23 on pull-down electrode plate 24.
The structure of Wilkinson power splitter and Wilkinson function clutch be it is identical, mainly by co-planar waveguide 1, asymmetric
Coplanar striplines 15 and resistance 7 are constituted, and the identical asymmetrical coplanar stripline 15 of two of them length can be by the milli on co-planar waveguide 1
Metric wave signal is divided into equal two parts, and isolation resistance 7 is located at the end of two asymmetrical coplanar striplines 15.
Heat to electricity conversion is realized using indirect type thermoelectric (al) type power sensor, it is mainly by 1, two resistance 7 of co-planar waveguide
And thermoelectric pile 12 is constituted, and thermoelectric pile 12 is by P-type semiconductor arm 8 and N-type semiconductor arm 9 by 10 grades of Ohmic contact
Connection composition, wherein co-planar waveguide 1 is connected with two resistance 7, and has one section of interval between thermoelectric pile 12 and terminal resistance 7.
The connection relationship of specific structure is as follows: first port 1-1 is signal input part, No.1 slot-coupled structure 2-1 and
No. two slot-coupled structure 2-2 are located at 1 upside ground wire of co-planar waveguide, No. three slot-coupled structure 2-3 and No. four slot-coupled knots
Structure 2-4 is then located at 1 downside ground wire of co-planar waveguide, and these two pair gap is symmetrical about center signal line, by a phase shift between them
Device 3 separates, and looks first at frequency detection module 4, and No.1 slot-coupled structure 2-1 is connected to second port 1-2, second port 1-
2 are connected with the input terminal of No.1 single-pole double-throw switch (SPDT) 20, and the output end of No.1 single-pole double-throw switch (SPDT) 20 is connected respectively to No.1
Wilkinson function clutch and No.1 indirect type thermoelectric (al) type power sensor, likewise, No. two slot-coupled structure 2-2 are connected to
Third port 1-3, third port 1-3 are connected with the input terminal of No. two single-pole double-throw switch (SPDT)s 21, No. two single-pole double-throw switch (SPDT)s 21
Output end is connected respectively to No.1 Wilkinson function clutch and No. two indirect type thermoelectric (al) type power sensors, and No.1
The output end of Wilkinson function clutch is connected to No. three indirect type thermoelectric (al) type power sensors；See phase detecting module 5 again, three
Number slot-coupled structure 2-3 is connected with the 4th port 1-4, and the 4th port 1-4 is connected to No. two Wilkinson function clutchs, and No. four
Slot-coupled structure 2-4 is connected with fifth port 1-5, and fifth port 1-5 is connected to No. three Wilkinson function clutchs, with reference to letter
Number by the input terminal inputs of No. four Wilkinson power splitters, the output end of No. four Wilkinson power splitters is connected respectively to two
Number Wilkinson function clutch and No. three Wilkinson function clutchs, then, the output end connection four of No. two Wilkinson function clutchs
The output end of number indirect type thermoelectric (al) type power sensor, No. three Wilkinson function clutchs connects No. five indirect type thermoelectric (al) type power
Sensor is finally power detection module 6, and No. six indirect type thermoelectric (al) type power sensors are connected at the 6th port 1-6.
The indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula of the invention the preparation method comprises the following steps:
1) prepare high resistant Si substrate 14 (4000 Ω cm), with a thickness of 400um；
2) one layer of SiO of thermal oxide growth2Layer 13, with a thickness of 1.2um；
3) one layer of polysilicon is deposited, P-type ion injects (doping concentration 1015cm-2), to reach wanting for production resistance 7
It asks.
4) P-type ion injection is carried out again using place of the mask 1 to thermoelectric pile P-type semiconductor arm 8 to be made, reach
The resistivity requirement of P-type semiconductor arm 8；
5) N-type ion injection is carried out using place of the mask 2 to thermoelectric pile N-type semiconductor arm 9 to be made, reaches N-type
The resistivity requirement of semiconductor arm 9；
6) photoresist is coated, photoetching is carried out to polysilicon layer, ultimately forms the P-type semiconductor arm 8 of resistance 7, thermoelectric pile 12
With N-type semiconductor arm 9；
7) Ohmic contact 10 is made in the P-type semiconductor arm 8 of thermoelectric pile and 9 junction of N-type semiconductor arm；
8) photoresist, the photoetching at removal transmission line, output electrode 11 and switch pull-down electrode plate 23 are coated on substrate
Glue evaporates one layer of seed layer Ti, with a thickness ofThen first layer gold is prepared, with a thickness of 0.3um, is removed by stripping technology
The photoresist of reservation, the metal layer in related removal face on a photoresist preliminarily form transmission line, output electrode 11 and switch drop-down
Electrode plate 23；
9) on the high resistant Si substrate 14 that step process obtains in front, one layer is generated by PECVDThick Si3N4
Dielectric layer, photoetching Si3N4Dielectric layer only retains the Si of 24 lower section of air bridges 16 and switch beam3N4Dielectric layer；
10) polyimide sacrificial layer of one layer of 1.6 μ m-thick is deposited, it is desirable that fill up all pits；Photoetching polyimides sacrifice
Layer only retains the polyimide sacrificial layer of 25 lower section of air bridges 16 and switch beam；
11) photoresist is coated, the light at preparation production transmission line, output electrode 11, air bridges 16 and switch beam 25 is removed
Photoresist evaporates one layer of seed layer Ti, with a thickness ofSecond layer gold is prepared, with a thickness of 2um, finally, the photoetching that removal retains
Glue forms transmission line, output electrode 11, air bridges 16 and switch beam 25；
12) in the backside coating photoresist of substrate, removal preparation forms the photoresist at membrane structure 17 in substrate back,
It is etched below 12 hot end of resistance 7 and thermoelectric pile at terminal load and Si substrate is thinned, form substrate membrane structure 17, reservation is about
The membrane structure of 40 μ m-thicks；
13) polyimide sacrificial layer is discharged, to remove the polyimide sacrificial layer of 25 lower section of air bridges 16 and switch beam；Most
It is impregnated 5 minutes with deionized water afterwards, dehydrated alcohol dehydration, volatilizees, dry under room temperature.
Present invention be distinguished in that:
Present invention employs novel slot-coupled structure, this slot-coupled structure can will be propagated in co-planar waveguide
Energy of electromagnetic field be coupled out a part, to detect the frequency of former millimeter-wave signal using the small signal in part that this is coupled out
With phase size；Power divider and power combiner using the structure of Wilkinson power splitter and Wilkinson function clutch come
Realize dividing equally or synthesizing for power；As for power detector, then realize that thermoelectricity turns using indirect type thermoelectric (al) type power sensor
It changes, to measure the size of power.These structures not only simplify circuit layout, reduce the production cost, and greatly improve
The detection efficiency of millimeter-wave signal, the frequency, phase and power for realizing millimeter-wave signal realize integration detection, simultaneously
Since the signal energy being coupled out compares very small, almost little on the influence of former millimeter-wave signal, former millimeter with original signal
Wave signal can continue back-propagation and carry out power measurement.
The structure for meeting conditions above is considered as the indirect type millimeter-wave signal detection of silicon substrate slot-coupled formula of the invention
Device.
Claims (4)
1. a kind of indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula, which is characterized in that signal detector production
It is by co-planar waveguide (1), No.1 slot-coupled structure (2-1), No. two slot-coupled structure (2- on high resistant Si substrate (14)
2), No. three slot-coupled structures (2-3), No. four slot-coupled structures (2-4), phase shifter (3), No.1 single-pole double-throw switch (SPDT)
(20), No. two single-pole double-throw switch (SPDT)s (21), a Wilkinson power splitter, three Wilkinson function clutchs and six are indirect
Formula thermoelectric (al) type power sensor is constituted, and the connection relationship of specific structure is as follows: first port (1-1) is signal input part, one
Number slot-coupled structure (2-1) and No. two slot-coupled structures (2-2) are located at ground wire on the upside of co-planar waveguide (1), No. three gap couplings
It closes structure (2-3) and No. four slot-coupled structures (2-4) and is then located at ground wire on the downside of co-planar waveguide (1), these two pair gap is about in
Heart signal wire is symmetrical, is separated, is looked first at frequency detection module (4) by a phase shifter (3) between these two pair gap, No.1 seam
Gap coupled structure (2-1) is connected to second port (1-2), the input of second port (1-2) and No.1 single-pole double-throw switch (SPDT) (20)
End is connected, and the output end of No.1 single-pole double-throw switch (SPDT) (20) is connected respectively to No.1 Wilkinson function clutch and No.1 indirect type
Thermoelectric (al) type power sensor, likewise, No. two slot-coupled structures (2-2) are connected to third port (1-3), third port (1-
3) it is connected with the input terminal of No. two single-pole double-throw switch (SPDT)s (21), the output end of No. two single-pole double-throw switch (SPDT)s (21) is connected respectively to one
Number Wilkinson function clutch and No. two indirect type thermoelectric (al) type power sensors, and the output end of No.1 Wilkinson function clutch connects
It is connected to No. three indirect type thermoelectric (al) type power sensors；It sees again phase detecting module (5), No. three slot-coupled structures (2-3) and the
Four ports (1-4) are connected, and the 4th port (1-4) is connected to No. two Wilkinson function clutchs, No. four slot-coupled structures (2-4)
It is connected with fifth port (1-5), fifth port (1-5) is connected to No. three Wilkinson function clutchs, and reference signal passes through No. four
The input terminal of Wilkinson power splitter inputs, and the output end of No. four Wilkinson power splitters is connected respectively to No. two
Wilkinson function clutch and No. three Wilkinson function clutchs, then, the output end of No. two Wilkinson function clutchs connect No. four
Indirect type thermoelectric (al) type power sensor, the output end of No. three Wilkinson function clutchs connect No. five indirect type thermoelectric (al) type power and pass
Sensor is finally power detection module (6), No. six indirect type thermoelectric (al) type power sensors is connected at the 6th port (1-6).
2. the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula as described in claim 1, which is characterized in that No.1
Single-pole double-throw switch (SPDT) (20) and No. two single-pole double-throw switch (SPDT)s (21) are by co-planar waveguide (1), anchoring area (22), Si3N4Dielectric layer
(23), switch pull-down electrode plate (24) and switch beam (25) form, and co-planar waveguide (1) is connected on anchoring area (22), anchoring area
(22) it is connected with the switch beam (25) in two different branch, wherein a branch connects indirect type thermoelectric (al) type power sensing
Device, the input terminal of another branch connection Wilkinson function clutch, there is one layer of the air gap below switch beam (25),
It is mounted with switch pull-down electrode plate (24) in this air gap, and is also covered with one layer on switch pull-down electrode plate (24)
Si3N4Dielectric layer (23).
3. the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula as described in claim 1, which is characterized in that
The structure of Wilkinson power splitter and Wilkinson function clutch be it is identical, mainly by co-planar waveguide (1), asymmetric coplanar strip
Line (15) and resistance (7) are constituted, and resistance (7) is located at the end of two asymmetrical coplanar striplines (15).
4. the indirect type millimeter-wave signal detector of silicon substrate slot-coupled formula as described in claim 1, which is characterized in that use
Indirect type thermoelectric (al) type power sensor realizes heat to electricity conversion, it is mainly by co-planar waveguide (1), two resistance (7) and thermoelectricity
Heap (12) is constituted, and thermoelectric pile (12) is to pass through Ohmic contact (10) by P-type semiconductor arm (8) and N-type semiconductor arm (9)
Cascade composition, wherein co-planar waveguide (1) is connected with two resistance (7), and has between one section between thermoelectric pile (12) and resistance (7)
Every.
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Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004325162A (en) * | 2003-04-23 | 2004-11-18 | Mitsubishi Heavy Ind Ltd | Phase measuring apparatus and cosmic solar generation system |
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| WO2007101916A1 (en) * | 2006-03-09 | 2007-09-13 | Valtion Teknillinen Tutkimuskeskus | Device and method for measuring electrical power |
| CN101135704A (en) * | 2007-09-18 | 2008-03-05 | 东南大学 | Microelectron mechanical microwave signal phase detector and method for preparing the same |
| CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103018559A (en) * | 2012-12-26 | 2013-04-03 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103344831A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
| CN205844405U (en) * | 2016-07-19 | 2016-12-28 | 南京邮电大学 | High-precision Microwave power detecting system based on cantilever beam cascade structure |
-
2017
- 2017-01-24 CN CN201710052677.3A patent/CN106872796B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004325162A (en) * | 2003-04-23 | 2004-11-18 | Mitsubishi Heavy Ind Ltd | Phase measuring apparatus and cosmic solar generation system |
| WO2007101916A1 (en) * | 2006-03-09 | 2007-09-13 | Valtion Teknillinen Tutkimuskeskus | Device and method for measuring electrical power |
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| CN101135704A (en) * | 2007-09-18 | 2008-03-05 | 东南大学 | Microelectron mechanical microwave signal phase detector and method for preparing the same |
| CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103018559A (en) * | 2012-12-26 | 2013-04-03 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103344831A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
| CN205844405U (en) * | 2016-07-19 | 2016-12-28 | 南京邮电大学 | High-precision Microwave power detecting system based on cantilever beam cascade structure |
Non-Patent Citations (3)
| Title |
|---|
| Fabrication of the Different Microwave Power Sensor by Seesaw-Type MEMS Membrane;Zhenxiang Yi 等;《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》;20160831;第25卷(第4期);正文第582-584页 |
| High dynamic range microwave power sensor with thermopile and curled cantilever beam;Jiabin Yan等;《ELECTRONICS LETTERS》;20150820;第51卷(第17期);正文第1341-1343页 |
| 基于MEMS技术的差分式微波信号相位检测器;焦永昌 等;《东南大学学报》;20090131;第39卷(第1期);正文第142-145页 |
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