CN106841800B - Silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors - Google Patents
Silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors Download PDFInfo
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- CN106841800B CN106841800B CN201710052735.2A CN201710052735A CN106841800B CN 106841800 B CN106841800 B CN 106841800B CN 201710052735 A CN201710052735 A CN 201710052735A CN 106841800 B CN106841800 B CN 106841800B
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
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Abstract
Silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention are made of coplanar waveguide transmission line, slot-coupled structure, phase shifter, Wilkinson power splitter, Wilkinson function clutch and direct-type thermoelectric (al) type power sensor, total is made based on high resistant Si substrate, there are four slot-coupled structures for setting altogether, two slot-coupled structures of top are connected to two direct-type thermoelectric (al) type power sensors, two slot-coupled structures of lower section realize the phase measurement of signal, and a phase shifter is provided between the gap of front and back；Wilkinson power splitter and Wilkinson function clutch are made of coplanar waveguide transmission line, asymmetrical coplanar stripline and an isolation resistance；Direct-type thermoelectric (al) type power sensor is mainly made of coplanar waveguide transmission line, two thermocouples and a capacitance, and thermocouple is composed in series by metal arm and semiconductor arm, it is able to carry out self-heating and completes heat to electricity conversion.Not only cost is relatively low for the structure, but also efficiency also substantially increases.
Description
Technical field
The invention proposes silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors, belong to microelectronics machine
The technical field of tool system (MEMS).
Background technique
The detection of signal is always very important a special kind of skill in information science technology, and for many years, people are to signal
Detection and processing technique also obtaining continuous development and perfection, by constantly studying, can determine the three of a signal
Big element is frequency, power and phase, therefore briefly, the inspection to the detection of signal namely to this three big element of signal
It surveys.Phase detectors are a part mostly important in signal detection, are had in military, communication and aerospace field very big
Application value, existing phase detectors general work frequency is all lower, can not carry out phase inspection to very high-frequency signal
It surveys, and their structure is all complex, integrated level is not high, with the continuous improvement of signal frequency, the inspection of millimeter-wave signal
The emphasis for also having become people's research is surveyed, millimeter wave is a kind of electromagnetic wave between microwave and far infrared wave overlapping region, former
Some phase detectors cannot achieve effectively having detected to millimeter-wave signal.
In order to realize effective detection to millimeter-wave signal, coplanar waveguide transmission line slot-coupled structure,
On the Research foundation of Wilkinson power splitter, Wilkinson function clutch and direct-type thermoelectric (al) type power sensor, the present invention
A kind of online phase detectors of the millimeter wave under given frequency are devised on high resistant Si substrate, it utilizes coplanar wave guide transmission
Linear slit gap coupled structure realizes online detection to the phase of millimeter wave, is saved greatly domain, also improves simultaneously
Detection efficiency.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of silicon substrate given frequency slot-coupled formula direct-type millimeter wave phases
Detector comes to carry out phase-detection to millimeter wave present invention employs coplanar waveguide transmission line slot-coupled structure, in power point
With the structure for then using Wilkinson power splitter and Wilkinson function clutch with power combing aspect, in the function of composite signal
Rate measurement aspect then uses direct-type thermoelectric (al) type power sensor, realizes the online phase-detection of millimeter wave.
Technical solution: silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention are by coplanar
Waveguide transmission line, No.1 slot-coupled structure, No. two slot-coupled structures, No. three slot-coupled structures, No. four slot-coupled knots
Structure, phase shifter, a Wilkinson power splitter, two Wilkinson function clutchs and four indirect type thermoelectric (al) type power sensings
Device is constituted, and the connection relationship of specific structure is as follows: first port is signal input part, No.1 slot-coupled structure and No. two seams
Gap coupled structure is located at ground wire on the upside of coplanar waveguide transmission line, and No. three slot-coupled structures and No. four slot-coupled structures are then located at
Ground wire on the downside of coplanar waveguide transmission line, these two pair gap is symmetrical about center signal line, is separated between them by a phase shifter,
No.1 slot-coupled structure is connected to second port, and second port is connected with No.1 indirect type thermoelectric (al) type power sensor, equally
, No. two slot-coupled structures are connected to third port, and third port is connect with No. two indirect type thermoelectric (al) type power sensors；Again
See that phase detecting module, No. three slot-coupled structures are connected with the 4th port, the 4th port is connected to the conjunction of No.1 Wilkinson function
Device, No. four slot-coupled structures are connected with fifth port, and fifth port is connected to No. two Wilkinson function clutchs, reference signal
By the input terminal input of No. three Wilkinson power splitters, the output end of No. three Wilkinson power splitters is connected respectively to No.1
Wilkinson function clutch and No. two Wilkinson function clutchs, then, the output end of No.1 Wilkinson function clutch connect No. three
Indirect type thermoelectric (al) type power sensor, the output end of No. two Wilkinson function clutchs connect No. four indirect type thermoelectric (al) type power and pass
Sensor is connected to subsequent process circuit at the 6th port.
For phase detecting module, it is mainly by two slot-coupled structures, one section of phase shifter, two Wilkinson function
Clutch, a Wilkinson power splitter and two direct-type thermoelectric (al) type power sensors are constituted, and millimeter-wave signal passes through first
Cross the signal P that first slot-coupled structure Coupling goes out fraction3, then again by another gap after one section of phase shifter
Coupled structure is coupled out the signal P of part4, since gap size is identical, so P3=P1、P4=P2, the two coupled signals
Initial phase is all Φ, and certain phase difference is produced between themActually this section of phase shifter is exactly one section of coplanar wave
Transmission line is led, its length is set as with centre frequency f0It is 1/4 of wavelength at 35GHz, phase difference at this timeIt is just 90 °,
Under different frequency f, phase differenceIt is the function of frequency f:
Wherein f is the frequency of millimeter-wave signal, and c is the light velocity, εerFor the relative dielectric constant of transmission line, Δ L is phase shifter
Length phase difference can be obtained according to functional relation for known frequency fSize.The reference signal of given frequency
PcResolve into the signal of left and right two-way striking resemblances by Wilkinson power splitter, the left side signal and first gap coupling all the way
It closes signal and carries out power combing, obtain synthesis power PL, it is the trigonometric function relationship about phase Φ；And the right signal all the way
Power combing is carried out with second slot-coupled signal, obtains synthesis power PR, it is about phaseTrigonometric function close
System；
In conjunction with the two relational expressions, as long as measuring the watt level of left and right two-way composite signal, not only available phase
The size of Φ can also obtain the advanced or lagged relationship of phase.
The utility model has the advantages that in the present invention, the slot-coupled structure of this simplicity can be by script in coplanar waveguide transmission line
The energy of electromagnetic field of middle propagation is coupled out fraction, detected using the small signal that this is coupled out former millimeter-wave signal frequency and
Phase size simultaneously because the signal energy being coupled out is very small, therefore almost influences less former millimeter-wave signal, former millimeter
Wave signal can continue back-propagation, realize the online phase-detection of millimeter-wave signal under given frequency, substantially increase
The efficiency and integrated level of signal detector, potential using value with higher.
Detailed description of the invention
Fig. 1 is the top view of silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
Fig. 2 is Wilkinson in silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
The top view of power splitter and Wilkinson function clutch
Fig. 3 is direct-type thermoelectricity in silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
The top view of formula power sensor
Fig. 4 is direct-type thermoelectricity in silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
The sectional view in the direction formula power sensor AA '
Fig. 5 is direct-type thermoelectricity in silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention
The sectional view in the direction formula power sensor BB '
It include: phase detecting module 1, coplanar waveguide transmission line 2, phase shifter 3, slot-coupled structure 4-1, gap coupling in figure
Close structure 4-2, slot-coupled structure 4-3, slot-coupled structure 4-4, isolation resistance 5, metal arm 6, P-type semiconductor arm 7, ohm
Contact 8, hot end 9, cold end 10, capacitance 11, output electrode 12, capacitance bottom crown 13, Si3N4Dielectric layer 14, blocking electricity
Hold top crown 15, asymmetrical coplanar stripline 16, air bridges 17, high resistant Si substrate 18, SiO2Layer 19, substrate membrane structure 20, first
Port 1-1, second port 1-2, third port 1-3, the 4th port 1-4, fifth port 1-5, the 6th port 1-6.
Specific embodiment
Silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention are based on high resistant Si substrate
18 production, be by coplanar waveguide transmission line 2, No.1 slot-coupled structure 4-1, No. two slot-coupled structure 4-2, No. three gaps
Coupled structure 4-3, No. four slot-coupled structure 4-4,3, Wilkinson power splitters of phase shifter, two Wilkinson function close
Device and four indirect type thermoelectric (al) type power sensors are constituted.
The structure of Wilkinson power splitter and Wilkinson function clutch be it is identical, mainly by coplanar waveguide transmission line 2,
Asymmetrical coplanar stripline 16 and resistance 5 are constituted, and the identical asymmetrical coplanar stripline 16 of two of them length can be by co-planar waveguide
Millimeter-wave signal on transmission line 2 is divided into equal two parts, and resistance 5 is located at the end of two asymmetrical coplanar striplines 16.
Heat to electricity conversion is realized using direct-type thermoelectric (al) type power sensor, it is mainly by coplanar waveguide transmission line 2, metal
Arm 6, P-type semiconductor arm 7 and a capacitance 11 are constituted, two heat that wherein metal arm 6 and P-type semiconductor arm 7 are constituted
Galvanic couple is connected in parallel, and coplanar waveguide transmission line 2 is directly connected with one end of the two thermocouples.
The connection relationship of specific structure is as follows: first port 1-1 is signal input part, No.1 slot-coupled structure 4-1 and
No. two slot-coupled structure 4-2 are located at 2 upside ground wire of coplanar waveguide transmission line, No. three slot-coupled structure 4-3 and No. four gaps
Coupled structure 4-4 is then located at 2 downside ground wire of coplanar waveguide transmission line, and these two pair gap is symmetrical about center signal line, they it
Between separated by a phase shifter 3, No.1 slot-coupled structure 4-1 is connected to second port 1-2, between second port 1-2 and No.1
It connects formula thermoelectric (al) type power sensor to be connected, likewise, No. two slot-coupled structure 4-2 are connected to third port 1-3, third port
1-3 is connect with No. two indirect type thermoelectric (al) type power sensors；Phase detecting module 1, No. three slot-coupled structure 4-3 and are seen again
Four port 1-4 are connected, and the 4th port 1-4 is connected to No.1 Wilkinson function clutch, No. four slot-coupled structure 4-4 and the 5th
Port 1-5 is connected, and fifth port 1-5 is connected to No. two Wilkinson function clutchs, and reference signal passes through No. three Wilkinson function
Divide the input terminal input of device, the output end of No. three Wilkinson power splitters is connected respectively to No.1 Wilkinson function clutch and two
Number Wilkinson function clutch, then, the output end of No.1 Wilkinson function clutch connect No. three indirect type thermoelectric (al) type power and pass
Sensor, the output end of No. two Wilkinson function clutchs connect No. four indirect type thermoelectric (al) type power sensors, at the 6th port 1-6
It is connected to subsequent process circuit.
Silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors of the invention the preparation method comprises the following steps:
1) prepare high resistant Si substrate 18 (4000 Ω cm), with a thickness of 400um；
2) one layer of SiO of thermal oxide growth2Layer 19, with a thickness of 1.2um；
3) one layer of polysilicon is deposited, P-type ion injects (doping concentration 1015cm-2), to reach production Wilkinson function
Divide the resistivity requirement of the isolation resistance 5 and thermo-electric metal arm 6 of device.
4) P-type ion injection is carried out again using place of the mask to thermocouple P-type semiconductor arm 7 to be made, reach P
The resistivity requirement of type semiconductor arm 7；
5) photoresist is coated, photoetching is carried out to polysilicon layer, ultimately forms isolation resistance 5, the metal arm 6 of thermocouple and half
Conductor arm 7；
6) Ohmic contact 8 is made in the metal arm of thermocouple 6 and 7 junction of semiconductor arm；
7) photoresist, the photoresist at removal transmission line, capacitance 11 and output electrode 12, evaporation are coated on substrate
One layer of seed layer Ti, with a thickness ofThen first layer gold is prepared, with a thickness of 0.3um, the light retained by stripping technology removal
Photoresist, the metal layer in related removal face on a photoresist, preliminarily forms transmission line, the bottom crown 13 of capacitance and output electrode
12；
8) on the Si substrate that step process obtains in front, one layer is generated by PECVDThick Si3N4Dielectric layer,
Photoetching Si3N4Dielectric layer only retains the Si that make at 17 position of capacitance 11 and air bridges3N4Dielectric layer 14；
9) polyimide sacrificial layer of one layer of 1.6 μ m-thick is deposited, it is desirable that fill up all pits；Photoetching polyimides sacrifice
Layer only retains the polyimide sacrificial layer of 17 lower section of air bridges；
10) photoresist is coated, preparation production transmission line, 17 ground of capacitance 11, output electrode 12 and air bridges are removed
The photoresist of side, evaporates one layer of seed layer Ti, with a thickness ofSecond layer gold is prepared, with a thickness of 2um, finally, what removal retained
Photoresist forms transmission line, the top crown 15 of capacitance, output electrode 12 and air bridges 17；
11) in the backside coating photoresist of substrate, removal preparation forms the photoetching in 20 place of membrane structure in substrate back
Glue etches below thermocouple intermediate region, that is, hot end 9 and Si substrate is thinned, and forms substrate membrane structure 20, and retaining is about 40 μ m-thicks
Membrane structure；
12) polyimide sacrificial layer is discharged, to remove the polyimide sacrificial layer of 17 lower section of air bridges；Finally, go from
It is impregnated 5 minutes in sub- water, dehydrated alcohol dehydration, volatilizees, dry under room temperature.
Present invention be distinguished in that:
Present invention employs novel slot-coupled structure, this slot-coupled structure can will be in coplanar waveguide transmission line
The energy of electromagnetic field of middle propagation is coupled out a part, to detect former millimeter-wave signal using the small signal in part that this is coupled out
Phase size, thus the millimeter wave phase-detection under realizing given frequency；Power divider and power combiner use
The structure of Wilkinson power splitter and Wilkinson function clutch realizes dividing equally or synthesizing for power；As for composite signal
Detection, then realize heat to electricity conversion using direct-type thermoelectric (al) type power sensor.These structures not only simplify circuit layout, drop
Low cost of manufacture, and the detection efficiency of millimeter-wave signal is substantially increased, simultaneously because the signal energy and original that are coupled out
Signal influences less former millimeter-wave signal compared to very small, therefore almost, former millimeter-wave signal can continue back-propagation into
The subsequent processing of circuit of row.
The structure for meeting conditions above is considered as silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase of the invention
Bit detector.
Claims (3)
1. a kind of silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors, which is characterized in that the phase-detection
Device is produced on high resistant Si substrate (18), is by coplanar waveguide transmission line (2), No.1 slot-coupled structure (4-1), No. two gaps
Coupled structure (4-2), No. three slot-coupled structures (4-3), No. four slot-coupled structures (4-4), phase shifter (3), one
Wilkinson power splitter, two Wilkinson function clutchs and four indirect type thermoelectric (al) type power sensors are constituted, specifically
The connection relationship of structure is as follows: first port (1-1) is signal input part, No.1 slot-coupled structure (4-1) and No. two gaps
Coupled structure (4-2) is located at ground wire on the upside of coplanar waveguide transmission line (2), No. three slot-coupled structures (4-3) and No. four gap couplings
It closes structure (4-4) and is then located at ground wire on the downside of coplanar waveguide transmission line (2), these two pair gap is symmetrical about center signal line, this two
It is separated between gap by a phase shifter (3), No.1 slot-coupled structure (4-1) is connected to second port (1-2), second end
Mouthful (1-2) is connected with No.1 indirect type thermoelectric (al) type power sensor, likewise, No. two slot-coupled structures (4-2) are connected to the
Three ports (1-3), third port (1-3) are connect with No. two indirect type thermoelectric (al) type power sensors；Phase detecting module is seen again
(1), No. three slot-coupled structures (4-3) are connected with the 4th port (1-4), and the 4th port (1-4) is connected to No.1 Wilkinson
Function clutch, No. four slot-coupled structures (4-4) are connected with fifth port (1-5), and fifth port (1-5) is connected to No. two
Wilkinson function clutch, input terminal input of the reference signal by No. three Wilkinson power splitters, No. three Wilkinson function point
The output end of device is connected respectively to No.1 Wilkinson function clutch and No. two Wilkinson function clutchs, then, No.1
The output end of Wilkinson function clutch connects No. three indirect type thermoelectric (al) type power sensors, No. two Wilkinson function clutchs it is defeated
Outlet connects No. four indirect type thermoelectric (al) type power sensors, is connected to subsequent process circuit at the 6th port (1-6).
2. silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors as described in claim 1, feature exist
Be in, the structure of Wilkinson power splitter and Wilkinson function clutch it is identical, mainly by coplanar waveguide transmission line (2), non-
Symmetrical coplanar striplines (16) and resistance (5) are constituted, and resistance (5) is located at the end of two asymmetrical coplanar striplines (16).
3. silicon substrate given frequency slot-coupled formula direct-type millimeter wave phase detectors as described in claim 1, feature exist
In realizing heat to electricity conversion using direct-type thermoelectric (al) type power sensor, it is mainly by coplanar waveguide transmission line (2), metal arm
(6), P-type semiconductor arm (7) and a capacitance (11) are constituted, and wherein metal arm (6) and P-type semiconductor arm (7) are constituted
Two thermocouples be connected in parallel, and coplanar waveguide transmission line (2) is directly connected with one end of the two thermocouples.
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Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004325162A (en) * | 2003-04-23 | 2004-11-18 | Mitsubishi Heavy Ind Ltd | Phase measuring apparatus and cosmic solar generation system |
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| WO2007101916A1 (en) * | 2006-03-09 | 2007-09-13 | Valtion Teknillinen Tutkimuskeskus | Device and method for measuring electrical power |
| CN101135704A (en) * | 2007-09-18 | 2008-03-05 | 东南大学 | Microelectron mechanical microwave signal phase detector and method for preparing the same |
| CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103018559A (en) * | 2012-12-26 | 2013-04-03 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103344831A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
| CN205844405U (en) * | 2016-07-19 | 2016-12-28 | 南京邮电大学 | High-precision Microwave power detecting system based on cantilever beam cascade structure |
-
2017
- 2017-01-24 CN CN201710052735.2A patent/CN106841800B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004325162A (en) * | 2003-04-23 | 2004-11-18 | Mitsubishi Heavy Ind Ltd | Phase measuring apparatus and cosmic solar generation system |
| WO2007101916A1 (en) * | 2006-03-09 | 2007-09-13 | Valtion Teknillinen Tutkimuskeskus | Device and method for measuring electrical power |
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| CN101135704A (en) * | 2007-09-18 | 2008-03-05 | 东南大学 | Microelectron mechanical microwave signal phase detector and method for preparing the same |
| CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103018559A (en) * | 2012-12-26 | 2013-04-03 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103344831A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
| CN205844405U (en) * | 2016-07-19 | 2016-12-28 | 南京邮电大学 | High-precision Microwave power detecting system based on cantilever beam cascade structure |
Non-Patent Citations (3)
| Title |
|---|
| Fabrication of the Different Microwave Power Sensor by Seesaw-Type MEMS Membrane;Zhenxiang Yi 等;《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》;20160831;第25卷(第4期);正文第582-584页 |
| High dynamic range microwave power sensor with thermopile and curled cantilever beam;Jiabin Yan等;《ELECTRONICS LETTERS》;正文第1341-1343页;20150820;第51卷(第17期);正文第1341-1343页 |
| 基于MEMS技术的差分式微波信号相位检测器;焦永昌 等;《东南大学学报》;20090131;第39卷(第1期);正文第142-145页 |
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