CN102411088B - Four-input micromechanical clamped beam thermoelectric microwave power sensor and preparation method thereof - Google Patents
Four-input micromechanical clamped beam thermoelectric microwave power sensor and preparation method thereof Download PDFInfo
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- CN102411088B CN102411088B CN 201110229467 CN201110229467A CN102411088B CN 102411088 B CN102411088 B CN 102411088B CN 201110229467 CN201110229467 CN 201110229467 CN 201110229467 A CN201110229467 A CN 201110229467A CN 102411088 B CN102411088 B CN 102411088B
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Abstract
The invention relates to a four-input micromechanical clamped beam thermoelectric microwave power sensor. Therefore, restriction that a traditional microwave power sensor can only measure a microwave power in a single input is broken through; measurement on a four-input microwave power can be realized; and meanwhile, it can be detected which is input by the microwave power and what a proportion of the microwave power is. According to the invention, four main line CPWs with a characteristic impedance of 50 ohms are arranged on a gallium arsenide substrate, wherein the four main line CPWs are symmetrically mutually and 90-degree angles are formed between the four main line CPWs. An output terminal of each of the main line CPW is in parallel connection with two terminal matching resistors with an impedance of 100 ohms. A thermocouple is near each of the terminal matching resistor and the four pairs of thermocouples are arranged symmetrically and are in series connection to form a thermopile. MEMS clamped beams are across the main line CPW signal lines and insulated dielectric layers are below the MEMS clamped beams; anchor regions of all the clamped beams are respectively connected with subline CPW signal lines; blocking capacitors are arranged at subline CPW ground wires, wherein the characteristic impedance of each of the subline CPW is 50 ohms; and an output terminal of each of the subline CPW is in parallel connection with two thermocouples with an impedance of 100 ohms.
Description
Technical field
The present invention proposes four input micromechanical clamped beam Thermoelectric Microwave Power Sensor and preparation methods, belong to the technical field of microelectromechanical systems (MEMS).
Background technology
In research of microwave technology, microwave power is an important parameter that characterizes the microwave signal feature, in the research of the links such as microwave signal generation, transmission and reception, microwave power measurement is absolutely necessary, and it has become the important component part of electromagnetic measurement.In recent years, along with the fast development of MEMS technology, the microwave power detector based on thermopair is one of device be widely used.Its principle of work produces heat for utilizing the terminal build-out resistor to absorb input microwave power to be measured, and survey near the temperature difference this build-out resistor by placing near the thermoelectric pile terminal build-out resistor, and it is converted into to thermoelectrical potential output, realize the measurement of microwave power.It has advantages of the linearity that low loss, high sensitivity are become reconciled.Yet existing microwave power detector can only be measured the microwave power of single input, need extra circuit or utilize a plurality of microwave power detectors to realize when needs are measured the microwave power of many inputs, caused the complicated of metering circuit and speeded mutually with nowadays highly integrated circuit design principle back of the body road.Along with the development of microelectric technique, modern PCS Personal Communications System and radar system require a microwave power detector can realize the measurement of four input microwave powers on sheet, can detect that wherein which has inputted the ratio of microwave power and watt level thereof simultaneously.Nowadays the MEMS fixed beam structure is conducted in-depth research, make to realize that based on the MEMS technology clamped beam Thermoelectric Microwave Power Sensor of above-mentioned functions becomes possibility.
Summary of the invention
technical matters:in order to overcome the deficiencies in the prior art, the invention provides a kind of four input clamped beam Thermoelectric Microwave Power Sensor and preparation methods based on the MEMS technology, place by symmetry the main line co-planar waveguide (CPW) that four characteristic impedances are 50 Ω, they are the angle of 90o each other, in the output terminal of each main line CPW two 100 Ω terminal build-out resistors in parallel, a thermopair is arranged near each terminal build-out resistor, these four pairs of thermopairs are also become to the symmetrical formation thermoelectric pile of placing and be connected in series, these four pairs of thermopairs are the angle of 90o each other too, thereby realize the measurement of four input microwave powers, and on each main line CPW signal wire across a MEMS clamped beam, below the MEMS clamped beam, insulating medium layer is arranged, the Liang Gemao district of its clamped beam connects respectively by-pass CPW signal wire, on its by-pass CPW ground wire, a capacitance is arranged, the characteristic impedance of this by-pass CPW is 50 Ω, at the thermopair of each by-pass CPW output terminal two 100 Ω in parallel, thereby can detect, wherein which has inputted the ratio of microwave power and microwave power size thereof.
technical scheme:it is substrate that four input micromechanical clamped beam Thermoelectric Microwave Power Sensors of the present invention be take gallium arsenide (GaAs), the major-minor line CPW that to be provided with characteristic impedance on substrate be 50 Ω, four MEMS clamped beams, clamped beam Mao district, insulating medium layer, capacitance, eight terminal build-out resistors that impedance is 100 Ω, one forms by eight thermopairs the thermoelectric pile that four pairs of thermoelectricity form occasionally, 16 thermopairs that the impedance be connected by by-pass CPW is 100 Ω, the output press welding block, a metal fin, air bridges and connecting line, form MEMS substrate film structure under substrate:
Major-minor line CPW is for realizing the transmission of microwave signal, and MEMS clamped beam, testing tool and the circuit of terminal build-out resistor are connected.Each major-minor line CPW is comprised of the signal wire of a CPW and the ground wire of two CPW, and its characteristic impedance is 50 Ω.
The terminal build-out resistor is connected to the output terminal of main line CPW, absorbs fully by main line CPW input end and is transferred to the microwave power of its output terminal, and be converted to heat.The impedance of each terminal build-out resistor is 100 Ω.
Thermoelectric pile comprises two kinds: form by eight thermopairs the thermoelectric pile that four pairs of thermoelectricity form occasionally, and the thermoelectric pile that forms occasionally of the thermoelectricity that is 100 Ω by two impedances in parallel of each by-pass CPW output terminal.Describedly by eight thermopairs, form the thermoelectric pile that four pairs of thermoelectricity form occasionally, its each thermopair is near a terminal build-out resistor, but with this terminal build-out resistor, be not connected, thermoelectric pile absorbs this heat near an end of terminal resistance, and cause the rising of this end temperature, be the hot junction of thermoelectric pile, yet the temperature of the other end of thermoelectric pile is used as environment temperature, be the cold junction of thermoelectric pile, difference due to the cold two ends of thermoelectric pile heat temperature, according to the Seebeck effect, produce the output of thermoelectrical potential on the output press welding block of thermoelectric pile; The thermoelectric pile that the described thermoelectricity that is 100 Ω by two impedances in parallel of each by-pass CPW output terminal forms occasionally, its each thermopair also is looked at as the build-out resistor of 100 Ω, at the center section of each thermopair, be hot junction, and the two ends of thermopair is cold junction.Each thermopair all is comprised of a semiconductor thermocouple arm and a metal thermocouple arm.
Four MEMS clamped beams are respectively across on four main line CPW signal wires placing in symmetry, these four MEMS clamped beams are the angle of 90o each other, the polyimide insulative dielectric layer is arranged below this clamped beam, its clamped beam Mao district all is connected with by-pass CPW signal wire, has realized being coupled out a certain proportion of microwave power by the MEMS clamped beam to by-pass CPW from main line CPW.
Metal fin is consisted of the thermoelectric pile that four pairs of thermoelectricity form occasionally cold junction eight thermopairs around, be environment temperature for the cold junction temperature that maintains this thermoelectric pile, thereby improve the temperature difference at the cold two ends of thermoelectric pile heat.
Connecting line is for being connected between thermopair and between thermoelectric pile and output press welding block.
The CPW ground wire separated by by-pass CPW signal wire connects by air bridges, and its air bridges below is covered by the polyimide insulative dielectric layer.
MEMS substrate film structure lays respectively at the terminal build-out resistor and consists of the below, hot junction of the thermoelectric pile that four pairs of thermoelectricity form occasionally eight thermopairs, and by the below of the center section of by-pass CPW output terminal two thermopairs in parallel; GaAs substrate thereunder removes a part by MEMS back-etching technology, forms MEMS substrate film structure, thereby has improved the temperature difference at the cold two ends of transfer efficiency raising thermoelectric pile heat of heat.
On physical construction, major-minor line CPW, MEMS clamped beam, clamped beam Mao district, polyimide insulative dielectric layer, terminal build-out resistor, capacitance, air bridges, thermoelectric pile, output press welding block, metal fin and connecting line are produced on same GaAs substrate.
Four input micromechanical clamped beam Thermoelectric Microwave Power Sensors of the present invention are placed four main line CPW by symmetry, they are the angle of 90o each other, output terminal at each main line CPW connects two terminal build-out resistors, a thermopair is arranged near each terminal build-out resistor, these four pairs of thermopairs are also become to the symmetrical formation thermoelectric pile of placing and be connected in series, these four pairs of thermopairs are the angle of 90o each other too, thereby realize the measurement of four input microwave powers; And on each main line CPW signal wire across a MEMS clamped beam, the polyimide insulative dielectric layer is arranged below this clamped beam, its clamped beam Mao district all is connected with by-pass CPW signal wire, has realized being coupled out a certain proportion of microwave power by the MEMS clamped beam to by-pass CPW from main line CPW; At each by-pass CPW output terminal two thermopairs that impedance is 100 Ω that are connected in parallel, its each thermopair also is looked at as the build-out resistor of 100 Ω, on each by-pass CPW ground wire, a capacitance is arranged, thereby can detect, wherein which has inputted the ratio of microwave power and microwave power size thereof.If four main line CPW input ends all are connected in radio circuit, if microwave signal power is coupled out certain proportion by the MEMS clamped beam to by-pass CPW from main line CPW, microwave power on the by-pass CPW be connected in MEMS clamped beam Mao district is absorbed by the thermopair of its corresponding two parallel connections fully and generates heat, cause that there is the temperature difference in the cold two ends of thermoelectric pile heat that are comprised of these two thermopairs, based on the Seebeck effect, on the output press welding block of this thermoelectric pile, produce the output of thermoelectrical potential, thereby by measurement, whether there is microwave power to be coupled to by-pass CPW by the MEMS clamped beam from main line CPW and detect the transmission whether this input has microwave power, when one, two, three or four microwave signals to be measured are respectively by one, two, when three or four CPW input ends are introduced, terminal build-out resistor in the parallel connection of these main lines CPW output terminal absorbs respectively these microwave powers and produces heat, terminal resistance temperature is on every side raise, be placed near the thermopair of this terminal resistance and measure respectively its temperature difference, based on the Seebeck effect, produce the output of thermoelectrical potential near the output press welding block of the thermoelectric pile terminal resistance be connected at main line CPW, thereby realize single input, dual input, the measurement of three inputs or four input microwave powers, simultaneously also can be coupled to by the MEMS clamped beam ratio that microwave power on by-pass CPW is converted into thermoelectrical potential respectively and determine the ratio that this main line CPW goes up the microwave power amount that is input to by measuring input end.
The preparation method of four input micromechanical clamped beam Thermoelectric Microwave Power Sensors is:
1) prepare gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N
+the doping content of gallium arsenide is for being 10
18cm
-3, its square resistance be 100～130 Ω/
?;
2) at the N of extension
+gallium arsenide substrate applies photoresist, retains the photoresist that preparation is made ohmic contact regions and begun to take shape the semiconductor thermocouple arm of thermoelectric pile, then removes the N of the extension in photoresist place
+gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm that begins to take shape, being completed into its doping content is 10
17cm
-3the semiconductor thermocouple arm of thermoelectric pile;
4) apply photoresist on the substrate obtained in step 3), remove the photoresist that the metal thermocouple arm place of thermoelectric pile is made in preparation;
5) sputter gold germanium nickel/gold on substrate, its thickness is 2700 altogether;
6) peel off and remove the photoresist stayed in step 4), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm of formation thermoelectric pile removed;
7) apply photoresist on the substrate obtained in step 6), remove the photoresist that terminal build-out resistor place is made in preparation;
8) sputter tantalum nitride on substrate, its thickness is 1
μm;
9) photoresist lift off stayed in step 7) is removed, the tantalum nitride above related removal photoresist, begin to take shape the terminal build-out resistor consisted of tantalum nitride;
10) apply photoresist on gallium arsenide substrate, remove the photoresist that bottom crown, metal fin, output press welding block and the connecting line place of major-minor line CPW, MEMS clamped beam Mao district, capacitance are made in preparation;
11) on substrate by the evaporation mode layer of gold of growing, its thickness is 0.3
μm;
12) photoresist that step 10) stayed is removed, and has relatedly removed the gold above the photoresist, begins to take shape bottom crown, metal fin, output press welding block and the connecting line of major-minor line CPW, MEMS clamped beam Mao district, capacitance;
13) anti-carve tantalum nitride, form the terminal build-out resistor be connected with main line CPW output terminal, its square resistance be 25 Ω/
?;
14) deposit photoetching polyimide insulative dielectric layer: on the gallium arsenide substrate that step process obtains in front, apply 1.6
μthe polyimide layer that m is thick, the photoetching polyimide layer, only retain below MEMS clamped beam and air bridges and the polyimide insulative dielectric layer at capacitance place;
15) by evaporation mode, grow for the down payment of electroplating: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
16) apply photoresist, remove preparation and make major-minor line CPW, the photoresist in top crown, metal fin, output press welding block, air bridges and the connecting line place of MEMS clamped beam, MEMS clamped beam Mao district, capacitance;
17) electroplate layer of gold, its thickness is 2
μm;
18) photoresist stayed removal step 16);
19) anti-carve titanium/gold/titanium, the corrosion down payment, form major-minor line CPW, top crown, metal fin, output press welding block, air bridges and the connecting line of MEMS clamped beam, MEMS clamped beam Mao district, capacitance;
20) by this gallium arsenide substrate thinning back side to 100
μm;
21), at the backside coating photoresist of gallium arsenide substrate, remove preparation and form the photoresist in membrane structure place at the gallium arsenide back side;
The gallium arsenide substrate of the below, hot junction of the thermoelectric pile that 22) etching attenuate terminal build-out resistor and four pairs of thermoelectricity of eight thermopair formations form occasionally, gallium arsenide substrate with the below of center section by each by-pass CPW output terminal two thermopairs in parallel, form membrane structure, etching 80
μthe substrate thickness of m, retain 20
μthe membrane structure of m.
beneficial effect:four input micromechanical clamped beam Thermoelectric Microwave Power Sensor structures of the present invention, break through traditional Thermoelectric Microwave Power Sensor and can only measure the restriction of single input microwave power, realized the measurement of four input microwave powers, also can detect that wherein which has inputted the ratio of microwave power and microwave power size thereof simultaneously.And, this sensor have advantages of low loss, high sensitivity, the good linearity, high integrated level and with the GaAs single-chip microwave integration circuit compatibility.
The accompanying drawing explanation
Fig. 1 is the schematic diagram of four input micromechanical clamped beam Thermoelectric Microwave Power Sensors;
Fig. 2 is the A-A sectional view of four input micromechanical clamped beam Thermoelectric Microwave Power Sensors;
Fig. 3 is the B-B sectional view of four input micromechanical clamped beam Thermoelectric Microwave Power Sensors;
Figure comprises: four microwave signal input ends 1,2,3 and 4, major-minor line CPW 5, MEMS clamped beam 6, MEMS clamped beam Mao district 7, polyimide insulative dielectric layer 8, air bridges 9, capacitance 10 on by-pass CPW ground wire, terminal build-out resistor 11, thermopair 12, semiconductor thermocouple arm 13, metal thermocouple arm 14, metal fin 15, output press welding block 16, connecting line 17, the membrane structure 18 of MEMS substrate, gallium arsenide substrate 19.
Embodiment
The specific embodiments of four input micromechanical clamped beam Thermoelectric Microwave Power Sensors of the present invention is as follows:
The terminal build-out resistor 11 that major-minor line CPW that to be provided with characteristic impedance on gallium arsenide substrate 19 be 50 Ω 5, four MEMS clamped beams 6, clamped beam Mao district 7, insulating medium layer 8, capacitance 10, impedances are 100 Ω, the thermoelectric pile formed by the thermopair 12 that eight thermopairs 12 form thermoelectric pile that four pairs of thermopairs 12 form, two impedances being connected in parallel by each by-pass CPW 5 output terminal are 100 Ω, output press welding block 16, metal fin 15, air bridges 9 and a connecting line 17 form MEMS substrate film structures 18 for 19 times at substrate:
Major-minor line CPW 5 is for realizing the transmission of microwave signal, and MEMS clamped beam 6, testing tool and the circuit of terminal build-out resistor 11 are connected.The ground wire of each major-minor line CPW 5 signal wire by a CPW and two CPW forms, and its characteristic impedance is 50 Ω.
Terminal build-out resistor 11 is connected to the output terminal of main line CPW 5, absorbs fully by main line CPW input end 1,2,3 and 4 and is transferred to the microwave power of its output terminal, and be converted to heat.The impedance of each terminal build-out resistor 11 is 100 Ω.
Thermoelectric pile comprises two kinds: form four pairs of thermopairs 12 and the thermoelectric pile that forms by eight thermopairs 12, and the thermoelectric pile that forms of the thermopair 12 that is 100 Ω by two impedances in parallel of each by-pass CPW 5 output terminal.Describedly by eight thermopairs 12, form four pairs of thermopairs 12 and the thermoelectric pile that forms, its each thermopair 12 is near a terminal build-out resistor 11, but with this terminal build-out resistor 11, be not connected, thermoelectric pile absorbs this heat near an end of terminal resistance 11, and cause the rising of this end temperature, be the hot junction of thermoelectric pile, yet the temperature of the other end of thermoelectric pile is used as environment temperature, be the cold junction of thermoelectric pile, difference due to the cold two ends of thermoelectric pile heat temperature, according to the Seebeck effect, produce the output of thermoelectrical potential on the output press welding block 16 of thermoelectric pile; The thermoelectric pile that the described thermopair 12 that is 100 Ω by two impedances in parallel of by-pass CPW 5 output terminals forms, its each thermopair 12 also is looked at as the build-out resistor of 100 Ω, center section at each thermopair 12 is hot junction, and the two ends of thermopair 12 are cold junction.Each thermopair 12 all is comprised of a semiconductor thermocouple arm 13 and a metal thermocouple arm 14.
Four MEMS clamped beams 6 are respectively across on four main line CPW 5 signal wires placing in symmetry, these four MEMS clamped beams 6 are the angle of 90o each other, below this clamped beam 6, polyimide insulative dielectric layer 8 is arranged, its clamped beam Mao district 7 all is connected with by-pass CPW 5 signal wires, has realized being coupled out a certain proportion of microwave power by MEMS clamped beam 6 to by-pass CPW 5 from main line CPW 5.
Connecting line 17 is for being connected between thermopair 12 and between thermoelectric pile and output press welding block 16.
The CPW ground wire separated by by-pass CPW signal wire connects by air bridges 9, and its air bridges 9 belows are covered by polyimide insulative dielectric layer 8.
MEMS substrate film structure 18 is positioned at terminal build-out resistor 11 and forms four pairs of thermopairs 12 and the below, hot junction of the thermoelectric pile that forms by eight thermopairs 12 respectively, and by the below of the center section of each by-pass CPW 5 output terminal two thermopairs 12 in parallel; GaAs substrate 19 thereunder removes a part by MEMS back-etching technology, forms MEMS substrate film structure 18, thereby has improved the temperature difference at the cold two ends of transfer efficiency raising thermoelectric pile heat of heat.
On physical construction, major-minor line CPW 5, MEMS clamped beam 6, clamped beam Mao district 7, polyimide insulative dielectric layer 8, terminal build-out resistor 11, air bridges 9, capacitance 10, thermopair 12, output press welding block 16, metal fin 15 and connecting line 17 are produced on same GaAs substrate 19.
Four input micromechanical clamped beam Thermoelectric Microwave Power Sensors of the present invention are placed four main line CPW 5 by symmetry, they are the angle of 90o each other, output terminal at each main line CPW 5 connects two terminal build-out resistors 11, a thermopair 12 is arranged near each terminal build-out resistor 11, these four pairs of thermopairs 12 are also become to the symmetrical formation thermoelectric pile of placing and be connected in series, these four pairs of thermopairs 12 are the angle of 90o each other too, thereby realize the measurement of four input microwave powers; And on each main line CPW signal wire across a MEMS clamped beam 6, below this clamped beam 6, polyimide insulative dielectric layer 8 is arranged, its clamped beam Mao district 7 all is connected with by-pass CPW signal wire, has realized being coupled out a certain proportion of microwave power by MEMS clamped beam 6 to by-pass CPW 5 from main line CPW 5; At each by-pass CPW output terminal thermopair 12 that two impedances are 100 Ω that is connected in parallel, its each thermopair 12 also is looked at as the build-out resistor of 100 Ω, on each by-pass CPW ground wire, a capacitance 10 is arranged, thereby can detect, wherein which has inputted the ratio of microwave power and microwave power size thereof.If four main line CPW input ends 1, 2, 3 and 4 all are connected in radio circuit, if microwave signal power is coupled out certain proportion by MEMS clamped beam 6 to by-pass CPW 5 from main line CPW 5, microwave power on the by-pass CPW 5 be connected in MEMS clamped beam Mao district 7 is fully absorbed and generates heat by the thermopair 12 of its corresponding two parallel connections, cause that there is the temperature difference in the cold two ends of thermoelectric pile heat that are comprised of these two thermopairs 12, based on the Seebeck effect, on the output press welding block 16 of this thermoelectric pile, produce the output of thermoelectrical potential, thereby by measurement, whether there is microwave power to be coupled to by-pass CPW 5 by MEMS clamped beam 6 from main line CPW 5 and detect the transmission whether this input has microwave power, when one, two, three or four microwave signals to be measured are respectively by one, two, three or four CPW input ends 1, 2, during 3 and 4 introducing, terminal build-out resistor 11 in these main lines CPW 5 output terminal parallel connections absorbs respectively these microwave powers and produces heat, terminal resistance 11 temperature is on every side raise, be placed near these terminal resistance 11 thermopairs 12 and measure respectively its temperature difference, based on the Seebeck effect, produce the output of thermoelectrical potential near the output press welding block 16 of the thermoelectric pile terminal resistance 11 be connected at main line CPW 5, thereby realize single input, dual input, the measurement of three inputs or four input microwave powers, simultaneously also can be coupled to by MEMS clamped beam 6 ratio that microwave power on by-pass CPW 5 is converted into thermoelectrical potential respectively and determine the ratio that is input to microwave power amount on this main line CPW 5 by measuring many input ends.
The preparation method of four input micromechanical clamped beam Thermoelectric Microwave Power Sensors is:
1) prepare gallium arsenide substrate 19: select the semi-insulating GaAs substrate of extension, wherein extension N
+the doping content of gallium arsenide is for being 10
18cm
-3, its square resistance be 100～130 Ω/
?;
2) at the N of extension
+gallium arsenide substrate applies photoresist, retains the photoresist that preparation is made ohmic contact regions and begun to take shape the semiconductor thermocouple arm 13 of thermoelectric pile, then removes the N of the extension in photoresist place
+gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm 13 that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the semiconductor thermocouple arm 13 of the thermoelectric pile that begins to take shape, being completed into its doping content is 10
17cm
-3the semiconductor thermocouple arm 13 of thermoelectric pile;
4) apply photoresist on the substrate 19 obtained in step 3), remove the photoresist that the metal thermocouple arm place 14 of thermoelectric pile is made in preparation;
5) sputter gold germanium nickel/gold on substrate 19, its thickness is 2700 altogether;
6) peel off and remove the photoresist stayed in step 4), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm 14 of formation thermoelectric pile removed;
7) apply photoresist on the substrate 19 obtained in step 6), remove the photoresist that terminal build-out resistor 11 places are made in preparation;
8) sputter tantalum nitride on substrate 19, its thickness is 1
μm;
9) photoresist lift off stayed in step 7) is removed, the tantalum nitride above related removal photoresist, begin to take shape the terminal build-out resistor 11 consisted of tantalum nitride;
10) apply photoresist on gallium arsenide substrate 19, remove the photoresist in bottom crown, metal fin 15, output press welding block 16 and connecting line 17 places of preparation making major-minor line CPW 5, MEMS clamped beam Mao district 7, capacitance 10;
11) on substrate 19 by the evaporation mode layer of gold of growing, its thickness is 0.3
μm;
12) photoresist that step 10) stayed is removed, and has relatedly removed the gold above the photoresist, begins to take shape bottom crown, metal fin 15, output press welding block 16 and the connecting line 17 of major-minor line CPW 5, MEMS clamped beam Mao district 7, capacitance 10;
13) anti-carve tantalum nitride, form the terminal build-out resistor 11 be connected with main line CPW 5 output terminals, its square resistance be 25 Ω/
?;
14) deposit photoetching polyimide insulative dielectric layer 8: on the gallium arsenide substrate 19 that step process obtains in front, apply 1.6
μthe polyimide layer that m is thick, the photoetching polyimide layer, only retain the polyimide insulative dielectric layer 8 at MEMS clamped beam 6 and air bridges 9 belows and capacitance 10 places;
15) by evaporation mode, grow for the down payment of electroplating: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
16) apply photoresist, remove preparation and make major-minor line CPW 5, the photoresist in the top crown of MEMS clamped beam 6, MEMS clamped beam Mao district 7, capacitance 10, metal fin 15, output press welding block 16, air bridges 9 and connecting line 17 places;
17) electroplate layer of gold, its thickness is 2
μm;
18) photoresist stayed removal step 16);
19) anti-carve titanium/gold/titanium, the corrosion down payment, form major-minor line CPW 5, the top crown of MEMS clamped beam 6, MEMS clamped beam Mao district 7, capacitance 10, metal fin 15, output press welding block 16, air bridges 9 and connecting line 17;
20) by these gallium arsenide substrate 19 thinning back sides to 100
μm;
21), at the backside coating photoresist of gallium arsenide substrate 19, remove preparation and form the photoresist in membrane structure 18 places at gallium arsenide 19 back sides;
22) etching attenuate terminal build-out resistor 11 and eight thermopairs 12 form four pairs of thermopairs 12 and the gallium arsenide substrate 19 of the below, hot junction of the thermoelectric pile that forms, gallium arsenide substrate 19 with the below of center section by each by-pass CPW 5 output terminals two thermopairs 12 in parallel, form membrane structure 18, etching 80
μthe substrate thickness of m, retain 20
μ the membrane structure 18 of m.
Distinguish that to be whether the standard of this structure as follows:
Four input micromechanical clamped beam Thermoelectric Microwave Power Sensors of the present invention, place by symmetry the main line CPW 5 that four characteristic impedances are 50 Ω, they are the angle of 90o each other, in the output terminal of each main line CPW 5 two 100 Ω terminal build-out resistors 11 in parallel, a thermopair 12 is arranged near each terminal build-out resistor 11, these four pairs of thermopairs 12 are also become to the symmetrical formation thermoelectric pile of placing and be connected in series, these four pairs of thermopairs 12 are the angle of 90o each other too, thereby realize the measurement of four input microwave powers; And on each main line CPW 5 signal wire across a MEMS clamped beam 6, insulating medium layer 8 is arranged below MEMS clamped beam 6, its clamped beam Mao district 7 connects respectively by-pass CPW 5 signal wires, on its by-pass CPW ground wire, a capacitance 10 is arranged, the characteristic impedance of this by-pass CPW 5 is also 50 Ω, at the thermopair 12 of each by-pass CPW 5 output terminal two 100 Ω in parallel, thereby can detect, wherein which has inputted the ratio of microwave power and microwave power size thereof; The structure that meets above condition is considered as four input micromechanical clamped beam Thermoelectric Microwave Power Sensors of the present invention.
Claims (2)
1. an input micromechanical clamped beam Thermoelectric Microwave Power Sensor, it is characterized in that: this sensor production is on gallium arsenide substrate (19), four main line CPW(5 are arranged in the above), the angle that they are mutually symmetrical and place and be each other 90o, each MEMS clamped beam (6) lays respectively at each main line CPW(5) top, the two ends of its MEMS clamped beam are separately fixed in Liang Gemao district (7), a by-pass CPW(5 of each anchor district connection) signal wire, the main line CPW ground wire separated by by-pass CPW signal wire connects by air bridges (9), at MEMS clamped beam (6) and air bridges (9) below, all by polyimide insulative dielectric layer (8), covered, in each main line CPW output terminal two terminal build-out resistors (11) that all are connected in parallel, near each terminal build-out resistor (11), a thermopair (12) is arranged, described each thermopair (12) is comprised of a semiconductor thermocouple arm (13) and a metal thermocouple arm (14).
2. four input micromechanical clamped beam Thermoelectric Microwave Power Sensors according to claim 1 is characterized in that: the quantity for the main line CPW input end (1,2,3 and 4) of introducing microwave signal power is four, and is each other the angle of 90o; At each main line CPW(5) output terminal connect two terminal build-out resistors (11), near each terminal build-out resistor (11), a thermopair (12) is arranged, these four pairs of thermopairs (12) are also become to symmetrical and place and be connected in series the formation thermoelectric pile, these four pairs of thermopairs (12) are the angle of 90o each other too; One end of the thermoelectric pile formed by these four pairs of thermopairs (12) near terminal build-out resistor (11) and the other end near metal fin (15).
3, four input micromechanical clamped beam Thermoelectric Microwave Power Sensors according to claim 1, it is characterized in that: four MEMS clamped beams (6) are respectively across on four main line CPW signal wires placing in symmetry, these four MEMS clamped beams (6) also are the angle of 90o each other, and its clamped beam Mao district (7) all is connected with by-pass CPW signal wire; At each by-pass CPW output terminal thermopair (12) that two impedances are 100 Ω that is connected in parallel, on each by-pass CPW ground wire, a capacitance (10) is arranged.
4, four input micromechanical clamped beam Thermoelectric Microwave Power Sensors according to claim 1 is characterized in that: connecting line (17) is for being connected between thermopair (12) and between thermoelectric pile and output press welding block (16); At gallium arsenide substrate (19) back side, MEMS substrate film structure (18) is arranged, they lay respectively at terminal build-out resistor (11) and form four pairs of thermopairs (12) and the below, hot junction of the thermoelectric pile that forms by eight thermopairs (12), and by each by-pass CPW(5) below of the center section of two thermopairs (12) of being connected in parallel of output terminal.
5, a kind of preparation method of four input micromechanical clamped beam Thermoelectric Microwave Power Sensors as claimed in claim 1 is characterized in that the preparation method is:
1) prepare gallium arsenide substrate (19): select the semi-insulating GaAs substrate of extension, wherein extension N
+the doping content of gallium arsenide is 10
18cm
-3, its square resistance be 100～130 Ω/
;
2) at the N of extension
+gallium arsenide substrate applies photoresist, retains the photoresist that preparation is made ohmic contact regions and begun to take shape the semiconductor thermocouple arm (13) of thermoelectric pile, then removes the N of the extension in photoresist place
+gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm (13) that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the semiconductor thermocouple arm (13) of the thermoelectric pile that begins to take shape, being completed into its doping content is 10
17cm
-3the semiconductor thermocouple arm (13) of thermoelectric pile;
4) the upper photoresist that applies of the substrate obtained in step 3) (19), remove the photoresist that the metal thermocouple arm place (14) of thermoelectric pile is made in preparation;
5) at the upper sputter gold germanium nickel/gold of gallium arsenide substrate (19), its thickness is 2700 altogether;
6) peel off and remove the photoresist stayed in step 4), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm (14) of formation thermoelectric pile removed;
7) the upper photoresist that applies of the substrate obtained in step 6) (19), remove preparation and make the photoresist that terminal build-out resistor (11) is located;
8) at the upper sputter tantalum nitride of gallium arsenide substrate (19), its thickness is 1 μ m;
9) photoresist lift off stayed in step 7) is removed, the tantalum nitride above related removal photoresist, begin to take shape the terminal build-out resistor (11) consisted of tantalum nitride;
10) at the upper photoresist that applies of gallium arsenide substrate (19), remove preparation and make major-minor line CPW(5), bottom crown, metal fin (15), output press welding block (16) and the local photoresist of connecting line (17) of MEMS clamped beam Mao district (7), capacitance (10);
11) upper by the evaporation mode layer of gold of growing in gallium arsenide substrate (19), its thickness is 0.3 μ m;
12) photoresist step 10) stayed is removed, relatedly removed the gold above the photoresist, begun to take shape major-minor line CPW(5), bottom crown, metal fin (15), output press welding block (16) and the connecting line (17) of MEMS clamped beam Mao district (7), capacitance (10);
13) anti-carve tantalum nitride, form and main line CPW(5) the terminal build-out resistor (11) that is connected of output terminal, its square resistance be 25 Ω/
;
14) deposit photoetching polyimide insulative dielectric layer (8): the upper thick polyimide insulative dielectric layer of 1.6 μ m that applies of the gallium arsenide substrate (19) that step process obtains in front, photoetching polyimide insulative dielectric layer, only retain the polyimide insulative dielectric layer (8) that MEMS clamped beam (6) and air bridges (9) below and capacitance (10) are located;
15) by evaporation mode, grow for the down payment of electroplating: evaporation titanium/gold/titanium three-layer metal, as down payment, its thickness is 500/1500/300;
16) apply photoresist, remove preparation and make major-minor line CPW(5), the top crown of MEMS clamped beam (6), MEMS clamped beam Mao district (7), capacitance (10), metal fin (15), output press welding block (16), air bridges (9) and the local photoresist of connecting line (17);
17) electroplate layer of gold, its thickness is 2 μ m;
18) photoresist stayed removal step 16);
19) anti-carve titanium/gold/titanium three-layer metal, the corrosion down payment, form major-minor line CPW(5), the top crown of MEMS clamped beam (6), MEMS clamped beam Mao district (7), capacitance (10), metal fin (15), output press welding block (16), air bridges (9) and connecting line (17);
20) by this gallium arsenide substrate (19) thinning back side to 100 μ m;
21), at the backside coating photoresist of gallium arsenide substrate (19), remove preparation and form the local photoresist of MEMS substrate film structure (18) at gallium arsenide substrate (19) back side;
22) etching attenuate terminal build-out resistor (11) and eight thermopairs (12) form four pairs of thermopairs (12) and the gallium arsenide substrate (19) of the below, hot junction of the thermoelectric pile that forms, with by each by-pass CPW(5) gallium arsenide substrate (19) of the below of the center section of output terminal two thermopairs in parallel (12), form MEMS substrate film structure (18), the substrate thickness of etching 80 μ m, retain the MEMS substrate film structure (18) of 20 μ m.
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