CN106841799B - The direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction - Google Patents
The direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction Download PDFInfo
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- CN106841799B CN106841799B CN201710052705.1A CN201710052705A CN106841799B CN 106841799 B CN106841799 B CN 106841799B CN 201710052705 A CN201710052705 A CN 201710052705A CN 106841799 B CN106841799 B CN 106841799B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
Abstract
The direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction of the invention is made of sensor, analog-to-digital conversion and the big module of liquid crystal display three, sensor is made of coplanar waveguide transmission line, slot-coupled structure, phase shifter, single-pole double-throw switch (SPDT), T junction power splitter, T junction function clutch and direct-type thermoelectric (al) type power sensor, the structure is produced on high resistant Si substrate, two slot-coupled structures of top realize the frequency measurement of signal, and two slot-coupled structures of lower section realize the phase measurement of signal；T junction power splitter and T junction function clutch are made of coplanar waveguide transmission line, sector-shaped defect structure and air bridges；Direct-type thermoelectric (al) type power sensor is made of coplanar waveguide transmission line, thermocouple and capacitance.Analog-to-digital conversion part is made of STM32 and AD620 peripheral circuit, and MCS51 single-chip microcontroller is calculated for formula, and liquid-crystal display section is made of one piece of liquid crystal display, substantially increases the efficiency of signal detection instrument.
Description
Technical field
The invention proposes the direct-type millimeter-wave signal detecting instruments of silicon substrate slot-coupled formula T junction, belong to microelectronics
The technical field of mechanical system (MEMS).
Background technique
21st century is the epoch of information science technology, and in the epoch of this rapid development, signal detection is as one
The important science and technology of item, has been obtained in-depth study, especially leads in current military affairs, communication and aerospace etc.
Domain, the detection to various panoramic signals are a very important tasks, and a signal has three big very important
Parameter: frequency, phase and power, low frequency signal, high-frequency signal and extremely high frequency signal can be divided by dividing according to frequency, wherein
Millimeter-wave signal is exactly a kind of signal of extremely high frequency, it is located at the region that microwave and far infrared wave overlap mutually, at present for high
The detection technique of the millimeter-wave signal of frequency is also frequently especially perfect, signal detector now mostly can only frequency to signal,
Phase and power etc. are individually measured, and integrated level is not very high, and their structure is all complex, are had very much
High-frequency effects, due to these restraining factors, the range of the detection technique of millimeter wave is not very big.
With to co-planar waveguide slot-coupled structure, T junction power splitter, T junction function clutch and direct-type thermoelectric (al) type function
The further investigation of rate sensor, the present invention devise a kind of by millimeter-wave frequency, phase and power detection on high resistant Si substrate
The signal detector integrated, this signal detector structure is simple, and cost of manufacture is lower, solves current millimeter wave frequency
The problems of segment signal detector, and the microwave parameter measured is shown by analog-to-digital conversion and liquid crystal display link
Output, obtains a complete microwave signal detector device.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of direct-type millimeter-wave signals of silicon substrate slot-coupled formula T junction
Detecting instrument, present invention employs co-planar waveguide slot-coupled structures to solve signal frequency detection, phase-detection and power inspection
The integrated problem surveyed then uses T junction power splitter and T junction function clutch structure in terms of power distribution and power combing,
Direct-type thermoelectric (al) type power sensor is used in terms of power detection, and is directly displayed parameter to be measured by analog-to-digital conversion
On LCD screen, form a comprehensive microwave signal detector device, for millimeter-wave signal detection laid it is solid secured
Basis.
Technical solution: the direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction of the invention is mainly
It is made of sensor, analog-to-digital conversion, MCS51 single-chip microcontroller and liquid crystal display four big modules, this four big module is again by some bases
The little module and circuit of plinth are constituted.
Wherein Sensor section is by these three little modules of frequency detection module, phase detecting module and power detection module
It constitutes, they are identical by coplanar waveguide transmission line, the identical slot-coupled structure of four sizes, phase shifter, two sizes
Single-pole double-throw switch (SPDT), a T junction power splitter, three T junction function clutchs and six direct-type thermoelectric (al) type power sensor institutes
It constitutes, the connection relationship of specific structure is as follows: first port is signal input part, No.1 slot-coupled structure and No. two gap couplings
It closes structure and is located at ground wire on the upside of coplanar waveguide transmission line, No. three slot-coupled structures and No. four slot-coupled structures are then located at coplanar
Ground wire on the downside of waveguide transmission line, these two pair gap is symmetrical about center signal line, is separated between them by a phase shifter, first
From the point of view of frequency detection module, No.1 slot-coupled structure is connected to second port, second port and No.1 single-pole double-throw switch (SPDT)
Input terminal is connected, and the output end of No.1 single-pole double-throw switch (SPDT) is connected respectively to No.1 T junction function clutch and No.1 direct-type thermoelectricity
Formula power sensor, likewise, No. two slot-coupled knots are connected to third port, third port and No. two single-pole double-throw switch (SPDT)s
Input terminal is connected, and the output end of No. two single-pole double-throw switch (SPDT)s is connected respectively to No.1 T junction function clutch and No. two direct-type thermoelectricity
Formula power sensor, and the output end of No.1 T junction function clutch is connected to No. three direct-type thermoelectric (al) type power sensors；Read fortune again
Position detection module, No. three slot-coupled structures are connected with the 4th port, and the 4th port is connected to No. two T junction function clutchs, and No. four
Slot-coupled structure is connected with fifth port, and fifth port is connected to No. three T junction function clutchs, and reference signal passes through No. four T-types
The input terminal input of power splitter is tied, the output end of No. four T junction power splitters is connected respectively to No. two T junction function clutchs and No. three T
Type knot function clutch, then, the output end of No. two T junction function clutchs connect No. four direct-type thermoelectric (al) type power sensors, No. three T-types
The output end for tying function clutch connects No. five direct-type thermoelectric (al) type power sensors, is finally power detection module, in the 6th port
Place is connected to No. six direct-type thermoelectric (al) type power sensors.
Firstly, for the frequency detection module of millimeter wave, it is mainly by two slot-coupled knots above co-planar waveguide
Structure, one section of phase shifter, two single-pole double-throw switch (SPDT)s, a T junction function clutch and a direct-type thermoelectric (al) type power sensor
It is constituted, millimeter-wave signal first passes around the signal P that first slot-coupled structure Coupling goes out fraction1(corresponding voltage V1),
Then go out the signal P of part by another slot-coupled structure Coupling again after one section of phase shifter2(corresponding voltage V2),
Certain phase difference is just produced between two such coupled signalActually this section of phase shifter is exactly that one section of co-planar waveguide passes
Defeated line, its length are set as with centre frequency f0It is 1/4 of wavelength at 35GHz, phase difference at this timeIt is exactly 90 °, but when frequency
When rate f changes, phase differenceIt is the function of frequency f:
Wherein f is the frequency of millimeter-wave signal, and c is the light velocity, εerFor the relative dielectric constant of transmission line, Δ L is phase shifter
Length, as long as therefore measuringValue, the size of frequency f can be obtained.Then by two coupled signal P1、P2By T junction
Function clutch is synthesized, then goes detection composite signal power P with direct-type power sensorsSize, the power P of composite signals
(corresponding voltage Vs) it is about phase differenceTrigonometric function relationship:
Due to coupled signal P1、P2Size it is unknown, therefore two single-pole double-throw switch (SPDT)s are employed herein and are coupled out two
The small signaling rate come first carries out power detection, obtains its watt level, then carries out power combing by T junction function clutch again,
Then the size of frequency f can be calculated by formula (2).Pay attention to phase difference hereOnly between two small signals of coupling
Phase difference is not the phase Φ of former millimeter-wave signal, it is also necessary to determine former millimeter wave letter by phase detecting module come accurate
Number phase Φ.
For the phase detecting module of millimeter wave, similarly and by two slot-coupled structure Couplings go out the small signal in part
P3And P4, since gap size is identical, so the small signal P of coupling that their watt level measures before being equal to1And P2, they
Initial phase be all Φ, only wherein second slot-coupled signal has propagated phase moreReference signal Pc(corresponding voltage
For Vc) by T junction power splitter resolve into the signals of left and right two-way striking resemblances, the left side signal and first slot-coupled all the way
Signal carries out power combing, obtains synthesis power PL(corresponding voltage VL), it is the trigonometric function relationship about phase Φ；And
Signal and second slot-coupled signal carry out power combing all the way on the right, obtain synthesis power PR(corresponding voltage VR), it is
About phaseTrigonometric function relationship；
Wherein P3=P1、P4=P2, in conjunction with the two relational expressions, not only the size of available phase Φ, can also be obtained
The advanced or lagged relationship of phase, realizes -180 °~+180 ° of phase-detection.
Last millimeter wave power detection module is that former millimeter wave letter is detected with the thermoelectric (al) type power detector of direct-type
Number watt level, it is mainly made of coplanar waveguide transmission line, two thermocouples and a capacitance, wherein often
A thermocouple is composed in series by a metal arm and a semiconductor arm, because metal arm is actually to be used as the thermoelectric (al) type
The terminal resistance of power detector, so the thermoelectric (al) type power sensor of this direct-type is a kind of self-heating type power sensing
Device, its two thermocouples are directly connected with signal wire, and the intermediate region of thermocouple is as hot end, and both sides fringe region is as cold
End, in this way after the energy of millimeter-wave signal is absorbed by metal arm, can measure thermoelectrical potential according to seebeck effect, need to infuse
Meaning is would not to dissipate substrate thinning, such thermal energy from substrate at the intermediate region of thermocouple i.e. hot end, is increased
The temperature difference in hot end and cold end, to also improve conversion efficiency of thermoelectric.The watt level P of former millimeter-wave signal can be by following formula
Expression:
What it is due to the output of indirect type thermoelectric (al) type power detector is analog voltage, is not watt level, therefore formula
(1), (2), (3) middle power P occurred1、P2、P3、P4、PL、PR、PC、PSIt requires voltage V by formula (4)1、V2、V3、V4、
VL、VR、VC、VSBeing calculated can just obtain.Since slot-coupled signal is actually more much smaller than original signal, the overwhelming majority
Signal still can continue to propagate and be received by direct-type thermoelectric (al) type power sensor, the utilization rate of signal substantially increases.
Second big module is analog-to-digital conversion part, its main function is the function that will be exported in three little modules of sensor
Rate is directly changed into digital signal, this part is mainly by STM32 microprocessor and the peripheral circuit being made of AD620 chip
It is constituted, then according to formula (1), (2), (3), (4), counter can release the size of corresponding frequency f, phase Φ and power P:
Followed by MCS51 single chip part, its main function are exactly that each voltage value progress formula is calculated to need
The numerical value of the frequency f, phase Φ and power P that want.
Finally be exactly liquid-crystal display section, its main function be exactly the digital signal that will be obtained directly carry out showing it is defeated
Out, the frequency f of measured signal, the reading of phase Φ and power P are obtained.
The utility model has the advantages that in the present invention, using simple and novel slot-coupled structure, this slot-coupled structure can
The energy of electromagnetic field propagated in co-planar waveguide is coupled out fraction, detects former millimeter wave using the small signal that this is coupled out
The frequency and phase size of signal, thus the very good solution frequency of millimeter-wave signal, phase and power detection is integrated
Change, simultaneously because the signal energy being coupled out is very small, therefore almost former millimeter-wave signal is influenced less, former millimeter-wave signal
It can continue back-propagation and carry out power measurement, which uses the simple and novel slot-coupled of structure
Structure, frequency, phase and power detection is integrated together, the efficiency of signal detector is substantially increased, while will simulation
Output signal on LCD screen, constitutes complete microwave signal detector device by conversion directly output, with higher latent
In application value.
Detailed description of the invention
Fig. 1 is the general diagram of the direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction of the invention
Fig. 2 is sensor in the direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction of the invention
Top view
Fig. 3 is sensor in the direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction of the invention
The top view of single-pole double-throw switch (SPDT)
Fig. 4 is sensor in the direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction of the invention
The sectional view in the direction single-pole double-throw switch (SPDT) AA '
Fig. 5 is the T of sensor in the direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction of the invention
The top view of type knot power splitter and T junction function clutch
Fig. 6 is sensor in the direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction of the invention
The top view of direct-type thermoelectric (al) type power sensor
Fig. 7 is sensor in the direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction of the invention
The sectional view in the direction direct-type thermoelectric (al) type power sensor AA'
Fig. 8 is sensor in the direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction of the invention
The sectional view in the direction direct-type thermoelectric (al) type power sensor BB'
Fig. 9 is analog-to-digital conversion in the direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction of the invention
Circuit diagram
It include: frequency detection module 1, phase detecting module 2, power detection module 3, coplanar waveguide transmission line 4, seam in figure
Gap coupled structure 5-1, slot-coupled structure 5-2, slot-coupled structure 5-3, slot-coupled structure 5-4, phase shifter 6, high resistant Si
Substrate 7, silicon dioxide layer 8, sector-shaped defect structure 9, air bridges 10, metal arm 11, semiconductor arm 12, Ohmic contact 13, hot end
14, cold end 15, output electrode 16, capacitance 17, capacitance bottom crown 18, Si3N4Dielectric layer 19, capacitance top crown
20, substrate membrane structure 21, No.1 single-pole double-throw switch (SPDT) 22, No. two single-pole double-throw switch (SPDT)s 23, switch beam 24, anchoring area 25, under switch
Pulling electrode plate 26, first port 1-1, second port 1-2, third port 1-3, the 4th port 1-4, fifth port 1-5, the 6th end
Mouth 1-6.
Specific embodiment
Sensor section is base in the direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction of the invention
It is made in high resistant Si substrate 7, it is by coplanar waveguide transmission line 4, No.1 slot-coupled structure 5-1, No. two slot-coupled knots
Structure 5-2, No. three slot-coupled structure 5-3, No. four slot-coupled structure 5-4, phase shifter 6, No.1 single-pole double-throw switch (SPDT) 22, two
23, T junction power splitters of single-pole double-throw switch (SPDT), three T junction function clutchs and six direct-type thermoelectric (al) type power sensors
It is constituted.
The structure of T junction power splitter and T junction function clutch be it is identical, mainly by 4, two sectors of coplanar waveguide transmission line
Defect sturcture 9 and three air bridges 10 are constituted, and sector-shaped defect structure 9 is the defect of the fan shape at two input ports
Ground structure, and air bridges 10 are the girder constructions above center signal line.
Heat to electricity conversion is realized using direct-type thermoelectric (al) type power sensor, it is mainly by coplanar waveguide transmission line 4, two
A thermocouple and a capacitance 17 are constituted, wherein each thermocouple is by 12 series connection group of metal arm 11 and semiconductor arm
At because metal arm 11 is actually the terminal resistance as the thermoelectric (al) type power detector, the heat of this direct-type
Electric-type power sensor is a kind of self-heating type power sensor, its two thermocouples are directly connected with signal wire, thermocouple
Intermediate region as hot end, both sides fringe region is as cold end, in this way when the energy of millimeter-wave signal is absorbed by metal arm 11
Afterwards, thermoelectrical potential can be measured according to seebeck effect, it should be noted that can will serve as a contrast at intermediate region, that is, hot end of thermocouple
Bottom is thinned, and such thermal energy would not be dissipated from substrate, the temperature difference of hot end and cold end be increased, to also improve heat to electricity conversion
Efficiency.
Specific structure scheme is as follows: first port 1-1 is signal input part, No.1 slot-coupled structure 5-1 and No. two seams
Gap coupled structure 5-2 is located at 4 upside ground wire of coplanar waveguide transmission line, No. three slot-coupled structure 5-3 and No. four slot-coupled knots
Structure 5-4 is then located at 4 downside ground wire of coplanar waveguide transmission line, and these two pair gap is symmetrical about center signal line, by one between them
A phase shifter 6 separates, and looks first at frequency detection module 1, and No.1 slot-coupled structure 5-1 is connected to second port 1-2, and second
Port 1-2 is connected with the input terminal of No.1 single-pole double-throw switch (SPDT) 22, and the output end of No.1 single-pole double-throw switch (SPDT) 22 is connected respectively to
No.1 T junction function clutch and No.1 direct-type thermoelectric (al) type power sensor, likewise, No. two slot-coupled structure 5-2 are connected to
Third port 1-3, third port 1-3 are connected with the input terminal of No. two single-pole double-throw switch (SPDT)s 23, No. two single-pole double-throw switch (SPDT)s 23
Output end is connected respectively to No.1 T junction function clutch and No. two direct-type thermoelectric (al) type power sensors, and No.1 T junction function clutch
Output end be connected to No. three direct-type thermoelectric (al) type power sensors；Phase detecting module 2, No. three slot-coupled structure 5- are seen again
3 are connected with the 4th port 1-4, and the 4th port 1-4 is connected to No. two T junction function clutchs, No. four slot-coupled structure 5-4 and the 5th
Port 1-5 is connected, and fifth port 1-5 is connected to No. three T junction function clutchs, and reference signal passes through the defeated of No. four T junction power splitters
Enter end input, the output end of No. four T junction power splitters is connected respectively to No. two T junction function clutchs and No. three T junction function clutchs, so
Afterwards, the output end of No. two T junction function clutchs connects No. four direct-type thermoelectric (al) type power sensors, No. three T junction function clutchs it is defeated
Outlet connects No. five direct-type thermoelectric (al) type power sensors, is finally power detection module 3, is connected at the 6th port 1-6
No. six direct-type thermoelectric (al) type power sensors.Analog-to-digital conversion mould is connected to after each direct-type thermoelectric (al) type power sensor
Block, the digital signal for then obtaining these analog-to-digital conversions all accesses MCS51 single-chip microcontroller and carries out formula calculating, finally by liquid crystal
Display screen shows the numerical values recited of output frequency, phase and power.
The preparation side of sensor in the direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction of the invention
Method are as follows:
1) prepare high resistant Si substrate 7 (4000 Ω cm), with a thickness of 400um；
2) one layer of SiO of thermal oxide growth2Layer 8, with a thickness of 1.2um；
3) one layer of polysilicon is deposited, P-type ion injects (doping concentration 1015cm-2), to reach production thermo-electric metal
The resistivity requirement of arm 11.
4) P-type ion injection is carried out again using place of the mask to thermocouple P-type semiconductor arm 12 to be made, reach
The resistivity requirement of P-type semiconductor arm 12；
5) photoresist is coated, photoetching is carried out to polysilicon layer, ultimately forms the metal arm 11 and P-type semiconductor arm of thermocouple
12；
6) Ohmic contact 13 is made in the metal arm of thermocouple 11 and 12 junction of P-type semiconductor arm；
7) photoresist, removal transmission line, capacitance 17, output electrode 16 and switch pull-down electrode plate are coated on substrate
Photoresist at 25 evaporates one layer of seed layer Ti, with a thickness ofThen first layer gold is prepared, with a thickness of 0.3um, passes through stripping
Photoresist that separating process removal retains, the metal layer in related removal face on a photoresist preliminarily form transmission line, capacitance
Bottom crown 18, output electrode 16 and switch pull-down electrode plate 25；
8) on the Si substrate that step process obtains in front, one layer is generated by PECVDThick Si3N4Dielectric layer,
Photoetching Si3N4Dielectric layer only retains the Si that make at capacitance 17, air bridges 10 and switch beam 233N4Dielectric layer 19；
9) polyimide sacrificial layer of one layer of 1.6 μ m-thick is deposited, it is desirable that fill up all pits；Photoetching polyimides sacrifice
Layer only retains the polyimide sacrificial layer of 23 lower section of air bridges 10 and switch beam；
10) photoresist is coated, preparation production transmission line, capacitance 17, output electrode 16, air bridges 10 and switch are removed
The photoresist of Liang23Chu evaporates one layer of seed layer Ti, with a thickness ofSecond layer gold is prepared, with a thickness of 2um, finally, removal is protected
The photoresist stayed forms transmission line, the top crown 20 of capacitance, output electrode 16, air bridges 10 and switch beam 23；
11) in the backside coating photoresist of substrate, removal preparation forms the photoetching in 21 place of membrane structure in substrate back
Glue etches below thermocouple intermediate region, that is, hot end 13 and Si substrate is thinned, and forms substrate membrane structure 21, and retaining is about 40 μ m-thicks
Membrane structure；
12) polyimide sacrificial layer is discharged, to remove the polyimide sacrificial layer of 23 lower section of air bridges 10 and switch beam；Most
Afterwards, it impregnates 5 minutes in deionized water, dehydrated alcohol dehydration, volatilizees, dry under room temperature.
Present invention be distinguished in that:
Present invention employs novel slot-coupled structure, this slot-coupled structure can will be propagated in co-planar waveguide
Energy of electromagnetic field be coupled out a part, to detect the frequency of former millimeter-wave signal using the small signal in part that this is coupled out
With phase size；Power divider and power combiner realize power using the structure of T junction power splitter and T junction function clutch
Divide equally or synthesize；As for power detector, then heat to electricity conversion is realized using direct-type thermoelectric (al) type power sensor.These knots
Structure is simple and effective, reduces the production cost, while also improving the detection efficiency of millimeter-wave signal, realizes millimeter-wave signal
Frequency, phase and power realize integration detection, again while by analog output signal by conversion directly output in liquid crystal
On screen, a complete microwave signal detector device is constituted.
The structure for meeting conditions above is considered as the direct-type millimeter-wave signal of silicon substrate slot-coupled formula T junction of the invention
Detecting instrument.
Claims (3)
1. a kind of direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction, the sensing of the signal detection instrument
Device part is produced on high resistant Si substrate (7), is by coplanar waveguide transmission line (4), No.1 slot-coupled structure (5-1), No. two
Slot-coupled structure (5-2), No. three slot-coupled structures (5-3), No. four slot-coupled structures (5-4), phase shifter (6), No.1
Single-pole double-throw switch (SPDT) (22), No. two single-pole double-throw switch (SPDT)s (23), a T junction power splitter, three T junction function clutchs and six
Direct-type thermoelectric (al) type power sensor is constituted, and the connection relationship of specific structure is as follows: first port (1-1) is signal input
End, No.1 slot-coupled structure (5-1) and No. two slot-coupled structures (5-2) are located at ground wire on the upside of coplanar waveguide transmission line (4),
No. three slot-coupled structures (5-3) and No. four slot-coupled structures (5-4) are then located at ground wire on the downside of coplanar waveguide transmission line (4),
These two pair gap is symmetrical about center signal line, is separated between these two pair gap by a phase shifter (6), looks first at frequency inspection
It surveys module (1), No.1 slot-coupled structure (5-1) is connected to second port (1-2), and second port (1-2) and No.1 hilted broadsword are double
The input terminal of throw switch (22) is connected, and the output end of No.1 single-pole double-throw switch (SPDT) (22) is connected respectively to No.1 T junction function clutch
With No.1 direct-type thermoelectric (al) type power sensor, likewise, No. two slot-coupled structures (5-2) are connected to third port (1-3),
Third port (1-3) is connected with the input terminal of No. two single-pole double-throw switch (SPDT)s (23), the output end of No. two single-pole double-throw switch (SPDT)s (23)
It is connected respectively to No.1 T junction function clutch and No. two direct-type thermoelectric (al) type power sensors, and the output of No.1 T junction function clutch
End is connected to No. three direct-type thermoelectric (al) type power sensors；It sees again phase detecting module (2), No. three slot-coupled structures (5-3)
It is connected with the 4th port (1-4), the 4th port (1-4) is connected to No. two T junction function clutchs, No. four slot-coupled structures (5-4)
It is connected with fifth port (1-5), fifth port (1-5) is connected to No. three T junction function clutchs, and reference signal passes through No. four T junctions
The input terminal of power splitter inputs, and the output end of No. four T junction power splitters is connected respectively to No. two T junction function clutchs and No. three T-types
Function clutch is tied, then, the output end of No. two T junction function clutchs connects No. four direct-type thermoelectric (al) type power sensors, No. three T junctions
The output end of function clutch connects No. five direct-type thermoelectric (al) type power sensors, is finally power detection module (3), in the 6th port
No. six direct-type thermoelectric (al) type power sensors are connected at (1-6)；Connect after each direct-type thermoelectric (al) type power sensor
Then analog-to-digital conversion module, the digital signal for then obtaining these analog-to-digital conversions all access MCS51 single-chip microcontroller and carry out formula meter
It calculates, the numerical values recited of output frequency, phase and power is shown finally by liquid crystal display.
2. the direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction as described in claim 1, feature exist
Be in, the structure of T junction power splitter and T junction function clutch it is identical, mainly lacked by coplanar waveguide transmission line (4), two sectors
It falls into structure (15) and three air bridges (17) is constituted, sector-shaped defect structure (15) is the fan shape at two input ports
Defect ground structure, and air bridges (17) are the girder constructions above the center signal line.
3. the direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction as described in claim 1, feature exist
In realizing heat to electricity conversion using direct-type thermoelectric (al) type power sensor, it is mainly by coplanar waveguide transmission line (4), metal arm
(11), P-type semiconductor arm (12) and a capacitance (17) are constituted, wherein metal arm (11) and P-type semiconductor arm (12)
Two thermocouples constituted are connected in parallel, and coplanar waveguide transmission line (4) is directly connected with one end of the two thermocouples.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710052705.1A CN106841799B (en) | 2017-01-24 | 2017-01-24 | The direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710052705.1A CN106841799B (en) | 2017-01-24 | 2017-01-24 | The direct-type millimeter-wave signal detecting instrument of silicon substrate slot-coupled formula T junction |
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Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004325162A (en) * | 2003-04-23 | 2004-11-18 | Mitsubishi Heavy Ind Ltd | Phase measuring apparatus and cosmic solar generation system |
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| WO2007101916A1 (en) * | 2006-03-09 | 2007-09-13 | Valtion Teknillinen Tutkimuskeskus | Device and method for measuring electrical power |
| CN101135704A (en) * | 2007-09-18 | 2008-03-05 | 东南大学 | Microelectron mechanical microwave signal phase detector and method for preparing the same |
| CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103018559A (en) * | 2012-12-26 | 2013-04-03 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103344831A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
| CN205844405U (en) * | 2016-07-19 | 2016-12-28 | 南京邮电大学 | High-precision Microwave power detecting system based on cantilever beam cascade structure |
-
2017
- 2017-01-24 CN CN201710052705.1A patent/CN106841799B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004325162A (en) * | 2003-04-23 | 2004-11-18 | Mitsubishi Heavy Ind Ltd | Phase measuring apparatus and cosmic solar generation system |
| WO2007101916A1 (en) * | 2006-03-09 | 2007-09-13 | Valtion Teknillinen Tutkimuskeskus | Device and method for measuring electrical power |
| CN101034122A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Microelectronic machinery orthogonal double channels microwave phase online detector and manufacturing method therefor |
| CN101135704A (en) * | 2007-09-18 | 2008-03-05 | 东南大学 | Microelectron mechanical microwave signal phase detector and method for preparing the same |
| CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN103018559A (en) * | 2012-12-26 | 2013-04-03 | 东南大学 | Device and method for phase detection based on indirect type micromechanical microwave power sensor |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103344831A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104950172A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches |
| CN205844405U (en) * | 2016-07-19 | 2016-12-28 | 南京邮电大学 | High-precision Microwave power detecting system based on cantilever beam cascade structure |
Non-Patent Citations (3)
| Title |
|---|
| Fabrication of the Different Microwave Power Sensor by Seesaw-Type MEMS Membrane;Zhenxiang Yi 等;《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》;20160831;第25卷(第4期);正文第582-584页 |
| High dynamic range microwave power sensor with thermopile and curled cantilever beam;Jiabin Yan等;《ELECTRONICS LETTERS》;20150820;第51卷(第17期);正文第1341-1343页 |
| 基于MEMS技术的差分式微波信号相位检测器;焦永昌 等;《东南大学学报》;20090131;第39卷(第1期);正文第142-145页 |
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