CN101915870A - MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof - Google Patents

MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof Download PDF

Info

Publication number
CN101915870A
CN101915870A CN 201010223806 CN201010223806A CN101915870A CN 101915870 A CN101915870 A CN 101915870A CN 201010223806 CN201010223806 CN 201010223806 CN 201010223806 A CN201010223806 A CN 201010223806A CN 101915870 A CN101915870 A CN 101915870A
Authority
CN
China
Prior art keywords
cpw
microwave power
beam type
semi
mems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN 201010223806
Other languages
Chinese (zh)
Other versions
CN101915870B (en
Inventor
廖小平
张志强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Southeast University
Original Assignee
Southeast University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Southeast University filed Critical Southeast University
Priority to CN2010102238069A priority Critical patent/CN101915870B/en
Publication of CN101915870A publication Critical patent/CN101915870A/en
Application granted granted Critical
Publication of CN101915870B publication Critical patent/CN101915870B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Micromachines (AREA)

Abstract

The invention discloses an MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and a production method thereof. The microwave power sensor comprises a gallium arsenide substrate, a mainline CPW (Co-Planer Waveguide), a subline CPW, an MEMS cantilever beam type structure and a terminal microwave power monitoring system, wherein the MEMS cantilever beam type structure comprises a cantilever beam and an anchor area; the cantilever beam stretches across the mainline CPW signal line, and the fixed end of the cantilever beam is fixed on the anchor area; the anchor area is connected with the terminal microwave power monitoring system through the subline CPW signal line; and a drive electrode is arranged below the cantilever beam type structure. The MEMS cantilever beam type online microwave power sensor not only has the advantages of the terminal type microwave power sensor, such as low loss and high sensitivity, but also has the advantages of online microwave power measurement, realization of monitoring and not monitoring, integration of the online microwave power sensors with various kinds of coupling factors, and compatibility with the gallium arsenide monolithic microwave integrated circuit.

Description

Online microwave power detector of MEMS beam type and preparation method thereof
Technical field
The present invention relates to microelectron-mechanical (hereinafter to be referred as MEMS), relate in particular to online microwave power detector of MEMS beam type and preparation method thereof.
Background technology
In research of microwave technology, microwave power is an important parameter that characterizes the microwave signal feature, and the measurement of microwave power has consequence in applications of wireless technology.Existing microwave power detector is based on the terminal power sensor of diode, thermistor and thermoelectric pile, and they have low-loss and highly sensitive advantage, yet its maximum shortcoming is a full consumption input signal power when measuring microwave power.Development along with microelectric technique, modern PCS Personal Communications System and radar system not only require microwave power detector microwave signal when the power measurement process to be still available, it is online microwave power measurement, and microwave power detector proposed multi-purpose requirement, as realizing monitoring and not monitoring the integrated of two states and the online power sensor of multiple coupled degree.In recent years,, and the MEMS cantilever beam structure carried out deep research, made based on the MEMS technology and realize that the online microwave power detector of beam type three degrees of coupling of above-mentioned functions becomes possibility along with the fast development of MEMS technology.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of online microwave power detector and preparation method of beam type three degrees of coupling based on the MEMS technology, by control MEMS semi-girder driving voltage, make this microwave power detector realize monitoring and not monitoring two states; By the MEMS semi-girder of design different in width and length, change the size of these MEMS semi-girder degrees of coupling, realize online microwave power detector integrated of the different degrees of coupling.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
The online microwave power detector of a kind of MEMS beam type, comprise gallium arsenide substrate, CPW (co-planar waveguide), MEMS beam type structure and terminal microwave power monitoring system: described CPW comprises main line CPW signal wire, by-pass CPW signal wire and CPW ground wire, described main line CPW signal wire and CPW ground wire constitute main line CPW, and described by-pass CPW signal wire and CPW ground wire constitute by-pass CPW; Described MEMS beam type structure comprises semi-girder and anchor district, described semi-girder is across above main line CPW signal wire, the stiff end of semi-girder is fixed in the anchor district, and described anchor district is connected with terminal microwave power monitoring system by by-pass CPW signal wire rather than CPW ground wire; Described cantilever beam structure below is provided with drive electrode.
Described CPW is mainly used in the transmission that realizes microwave signal, adopts gold copper-base alloy.Realize treating the input and output of the microwave signal of power scale by main line CPW, realize being coupled out a certain proportion of main line CPW microwave power on terminal microwave power monitoring system by cantilever beam structure by by-pass CPW.
By to the width of semi-girder and the setting of length, can design different degree of coupling value (being the microwave power number percent that by-pass CPW is coupled to) from main line CPW.
By whether the power supply of drive electrode being controlled the control that can realize to semi-girder DOWN or UP state, when semi-girder is in the UP state, be that semi-girder and main line CPW signal wire are contactless, this moment, semi-girder was coupled microwave power to by-pass CPW hardly from main line CPW, thereby main line CPW was not carried out power monitoring; When semi-girder was in the DOWN state, promptly semi-girder contacted with the CPW signal wire, and this moment, semi-girder was coupled the corresponding proportion microwave power to by-pass CPW from main line CPW, thereby main line CPW is carried out power monitoring.
The number of described beam type structure is three, adopts gold copper-base alloy.The semi-girder width of different beam type structures can be different with length, can realize the different degrees of coupling by the different of each semi-girder width and length, and each beam type structure has independent driving electrodes separately.
The input end part of general by-pass CPW signal wire becomes vertical relation with corresponding main line CPW signal wire.
The main line CPW signal wire and the drive electrode surface coverage of described semi-girder below have the silicon nitride medium layer.
The place that described CPW ground wire is cut off can realize connecting by air bridges.
Described terminal microwave power monitoring system comprises terminal resistance and absorbs the thermoelectric pile of terminal resistance heat, the output terminal connecting terminal resistance of described by-pass CPW signal wire, and the close terminal resistance of thermoelectric pile, but be not connected with terminal resistance.
Terminal resistance adopts tantalum-nitride material to make, absorption is coupled to microwave power on the by-pass CPW by the MEMS semi-girder from main line CPW, and be converted into heat fully, after absorbing this heat near the end (being the hot junction) of the thermoelectric pile of terminal resistance, cause the rising of absorption edge temperature, still keep environment temperature away from the end (being cold junction) of the thermoelectric pile of terminal resistance, because two ends temperature difference, according to the Seebeck effect, produce the output of thermoelectrical potential, realize monitoring to microwave power.
Described thermoelectric pile can be made up of four thermopairs, and described thermopair comprises semiconductor thermocouple arm and metal thermocouple arm, adopts gold and lightly doped GaAs material to constitute.
In order to improve heat by the efficient of terminal resistance to the transmission of the hot junction of thermoelectric pile, and then the temperature difference at raising thermoelectric pile two ends, to improve the sensitivity of microwave power detector, the gallium arsenide substrate etching attenuate below the hot junction of terminal resistance and thermoelectric pile can be formed the substrate film structure.Terminal resistance and thermoelectric pile are covered by the silicon nitride medium layer, and its effect is that the protection terminal resistance is connected with the circuit of by-pass CPW output terminal and thermoelectric pile.
A kind of method for preparing the online microwave power detector of MEMS beam type, described method comprises the steps:
A, preparation gallium arsenide substrate: select the semi-insulating GaAs substrate of extension for use, wherein extension N +Gallium arsenide be doped to heavy doping, general concentration is more than or equal to 10 18Cm -3
B, photoetching are also isolated the N of extension +Gallium arsenide, the figure and the ohmic contact regions of the semiconductor thermocouple arm of formation thermoelectric pile;
C, anti-carve the N that forms by the figure of the semiconductor thermocouple arm of thermoelectric pile +Gallium arsenide, (general concentration is 10 to form light dope 18Cm -3Below) the semiconductor thermocouple arm of thermoelectric pile;
D, photoetching: removal will keep the local photoresist of gold germanium nickel/gold;
E, sputter gold germanium nickel/gold;
F, peel off, form the metal thermocouple arm of thermoelectric pile;
G, photoetching: removal will keep the photoresist in tantalum nitride place;
H, sputter tantalum nitride;
I, peel off;
J, photoetching: removal will keep the photoresist in the place of ground floor gold;
K, evaporation ground floor gold;
L, peel off, form main line CPW and by-pass CPW, anchor district and drive electrode;
M, anti-carve tantalum nitride, form the terminal resistance that is connected with by-pass CPW signal wire output terminal, its square resistance is 25 Ω/;
N, deposit silicon nitride: with plasma-enhanced chemical vapour deposition technology grown silicon nitride dielectric layer;
O, photoetching and etch silicon nitride dielectric layer: keep the silicon nitride on semi-girder below main line CPW signal wire and drive electrode, terminal resistance and the thermoelectric pile;
P, deposit and photoetching polyimide sacrificial layer: coating polyimide sacrifice layer on gallium arsenide substrate; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of semi-girder below;
Q, evaporation titanium/gold/titanium: the down payment that evaporation is used to electroplate;
R, photoetching: removal will be electroplated local photoresist;
S, electrogilding;
T, removal photoresist: removing does not need to electroplate local photoresist;
U, anti-carve titanium/gold/titanium, the corrosion down payment forms main line CPW and by-pass CPW and MEMS semi-girder;
V, with this gallium arsenide substrate thinning back side, generally in 50 μ m and 200 mu m ranges;
W, back side photoetching: remove the photoresist that forms the membrane structure place at the gallium arsenide back side;
The gallium arsenide substrate of the below, hot junction of X, etching attenuate terminal resistance and thermoelectric pile forms membrane structure;
Y, release polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS semi-girder, and deionized water soaks slightly, the absolute ethyl alcohol dehydration, and normal temperature volatilizees down, dries.
Beneficial effect: the online microwave power detector of MEMS beam type provided by the invention, the advantage that not only has the terminal type microwave power detector, as low-loss and high sensitivity, and have online microwave power measurement, realize monitoring and do not monitor two states, the multiple degree of coupling online microwave power detector integrated and with the advantage of GaAs single-chip microwave integration circuit compatibility.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is the enlarged diagram of I portion among Fig. 1;
Fig. 3 be among Fig. 2 A-A to sectional view;
Fig. 4 is the enlarged diagram of II portion among Fig. 1.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further explanation.
Be depicted as the online microwave power detector of a kind of MEMS beam type as Fig. 1,2,3 and 4, the terminal microwave power monitoring system 6 that on gallium arsenide substrate 1, is provided with CPW, three MEMS beam type structures and constitutes by terminal resistance 13 and thermoelectric pile.
CPW comprises main line CPW signal wire 7, by-pass CPW signal wire 8 and CPW ground wire 9, described main line CPW signal wire 7 and CPW ground wire 9 constitute main line CPW, described by-pass CPW signal wire 8 and CPW ground wire 9 constitute by-pass CPW, and the ground wire 9 that is cut off is connected by air bridges 17.
Described MEMS beam type structure comprises semi-girder 3 and anchor district 12, described semi-girder 3 is across above main line CPW signal wire 7, the stiff end of semi-girder 3 is fixed in the anchor district 12, described anchor district 12 is connected with terminal resistance 13 by by-pass CPW signal wire 8 rather than CPW ground wire 9, the input end part of by-pass CPW signal wire 8 and corresponding 7 one-tenth vertical relations of main line CPW signal wire.Drive electrode 10 is arranged on semi-girder 3 belows, and each beam type structure below is provided with independent driving electrodes 10 separately, and drive electrode 10 provides electricity to drive by press welding block 18.The main line CPW signal wire 7 of semi-girder 3 belows and drive electrode 10 are covered by silicon nitride medium layer 11.
By designing the cantilever beam structure 3 of three kinds of different in width and length, can set the size of semi-girder 3 degree of coupling when the DOWN attitude, and semi-girder 3 there is not almost power to be coupled out from main line CPW when the UP attitude; Whether powering by the drive electrode 10 of semi-girder 3 is used for controlling cantilever beam structure and whether is in DOWN or UP state, and whether corresponding main line CPW goes up certain proportion power and be coupled out by semi-girder.
Terminal resistance 13 can absorb fully by semi-girder 3 and be coupled to microwave power on the by-pass CPW from main line CPW, and is converted to heat.The thermoelectric pile that is made of semiconductor thermocouple arm 14 and metal thermocouple arm 15 is near terminal resistance 13, but is not connected with terminal resistance 13; Thermoelectric pile absorbs this heat near the hot junction of terminal resistance 13, and causes the rising of this end temperature, and the temperature of thermoelectric pile cold junction still remains environment temperature, since the difference of the cold two ends of thermoelectric pile heat temperature, the output that can produce thermoelectrical potential.For improve heat by terminal resistance 13 to the transfer efficiency in the hot junction of thermoelectric pile and then improve the temperature difference at thermoelectric pile two ends, to improve the sensitivity of microwave power detector, terminal resistance 13 can be become the membrane structure 16 of substrate with the gallium arsenide substrate etching attenuate of below, thermoelectric pile hot junction.Terminal resistance 13 and thermoelectric pile are covered by silicon nitride medium layer 11, and its effect is that protection terminal resistance 13 is connected with the circuit of by-pass CPW output terminal and thermoelectric pile.
Online microwave power detector of the present invention is by the cantilever beam structure 3 of three kinds of different in width of design and length, and the width of respective beam below main line CPW signal wire 7 is constant, design the microwave power detector that degree of coupling size is respectively three kinds of degrees of coupling of 1%, 5% and 10%, and realized online microwave power detector integrated of three kinds of degrees of coupling.Microwave signal 2 to be measured is transmitted on main line CPW, when the drive electrode 10 of three beam type structures does not all apply driving voltage, then these three kinds of beam type structures all are in the UP state, microwave signal power to be measured is not coupled out certain proportion by the beam type structure to by-pass CPW from main line CPW, and the microwave power detector of this moment is in not monitoring state.The drive electrode 10 that when the degree of coupling is 1% beam type structure is applied in driving voltage, the degree of coupling is that 5% and 10% beam type structure all is not applied to driving voltage, the degree of coupling is that 1% semi-girder 3 is in the DOWN state so, microwave signal power degree of being coupled then to be measured is that 1% beam type structure is coupled certain proportion to by-pass CPW from main line CPW, the watt level that is coupled out accounts for 1% of microwave signal power to be measured, yet the degree of coupling is 5% and 10% beam type structure all is not coupled out corresponding proportion to microwave signal power to be measured to by-pass CPW from main line CPW because of all applying driving voltage, in the degree of coupling is that microwave power on the by-pass CPW that connects of 1% beam type structure is absorbed by its relevant terminal resistance 13 fully and transfers heat to, thermoelectric pile near this terminal resistance 13 absorbs this heat, there is the temperature difference in the hot cold two ends that cause thermoelectric pile, thereby on thermoelectric pile, produce the output of thermoelectrical potential, realize the indirect measurement of microwave signal power to be measured, so the degree of coupling is that 1% the online microwave power detector of beam type structure is in monitoring state; In like manner, can realize respectively that the degree of coupling is that 5% or 10% the online microwave power detector of beam type structure is in monitoring state.
The method for preparing the online microwave power detector of above-mentioned MEMS beam type is as follows:
A, preparation gallium arsenide substrate 1: select the semi-insulating GaAs substrate of extension for use, wherein extension N +The doping content of gallium arsenide is 10 18m -3, its square resistance is 100~130 Ω/;
B, photoetching are also isolated the N of extension +Gallium arsenide, the figure and the ohmic contact regions of the semiconductor thermocouple arm 14 of formation thermoelectric pile;
C, anti-carve the N that forms by the figure of the semiconductor thermocouple arm 14 of thermoelectric pile +Gallium arsenide, forming doping content is 10 17Cm -3The semiconductor thermocouple arm 14 of thermoelectric pile;
D, photoetching: removal will keep the local photoresist of gold germanium nickel/gold;
E, sputter gold germanium nickel/gold, its thickness is altogether
Figure BSA00000183840600051
F, peel off, form the metal thermocouple arm 15 of thermoelectric pile;
G, photoetching: removal will keep the photoresist in tantalum nitride place;
H, sputter tantalum nitride, making its thickness is 1 μ m;
I, peel off;
J, photoetching: removal will keep the photoresist in the place of ground floor gold;
K, evaporation ground floor gold, making its thickness is 0.3 μ m;
L, peel off, form main line CPW and by-pass CPW, anchor district 12 and drive electrode 10;
M, anti-carve tantalum nitride, form the terminal resistance 13 that is connected with by-pass CPW signal wire 8 output terminals, its square resistance is 25 Ω/;
N, deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technology
Figure BSA00000183840600061
Thick silicon nitride medium layer 11;
O, photoetching and etch silicon nitride dielectric layer 11: keep the silicon nitride 11 on semi-girder 3 below main line CPW signal wires 7 and drive electrode 10, terminal resistance 13 and the thermoelectric pile;
P, deposit and photoetching polyimide sacrificial layer: on gallium arsenide substrate 1, apply the thick polyimide sacrificial layer of 1.6 μ m; Pit is filled up in requirement, and the thickness of polyimide sacrificial layer has determined MEMS semi-girder 3 and its below in the distance between the silicon nitride medium layer 11 on the signal wire 7 of main line CPW; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of semi-girder 3 belows;
Q, evaporation titanium/gold/titanium, making its thickness is 500/1500/
Figure BSA00000183840600062
The down payment that evaporation is used to electroplate;
R, photoetching: removal will be electroplated local photoresist;
S, electrogilding, its thickness are 2 μ m;
T, removal photoresist: removing does not need to electroplate local photoresist;
U, anti-carve titanium/gold/titanium, the corrosion down payment forms main line CPW and by-pass CPW and MEMS semi-girder 3;
V, with this gallium arsenide substrate 1 thinning back side to 100 μ m;
W, back side photoetching: remove the photoresist that forms membrane structure 16 places at the gallium arsenide back side;
The gallium arsenide substrate of below, the hot junction of X, etching attenuate terminal resistance 13 and thermoelectric pile forms membrane structure 16: etching the substrate thickness of 80 μ m, keep the membrane structure of 20 μ m;
Y, release polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS semi-girder 3, and deionized water soaks slightly, the absolute ethyl alcohol dehydration, and normal temperature volatilizees down, dries.
The above only is a preferred implementation of the present invention; be noted that for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.

Claims (6)

1. online microwave power detector of MEMS beam type, it is characterized in that: described microwave power detector comprises gallium arsenide substrate (1), CPW, MEMS beam type structure and terminal microwave power monitoring system (6); Described CPW comprises main line CPW signal wire (7), by-pass CPW signal wire (8) and CPW ground wire (9), and described main line CPW signal wire (7) and CPW ground wire (9) constitute main line CPW, and described by-pass CPW signal wire (8) and CPW ground wire (9) constitute by-pass CPW; Described MEMS beam type structure comprises semi-girder (3) and anchor district (12), described semi-girder (3) is across the top at main line CPW signal wire (7), the stiff end of semi-girder (3) is fixed in the anchor district (12), and described anchor district (12) is connected with terminal microwave power monitoring system (6) by by-pass CPW signal wire (8); Described beam type structure below is provided with drive electrode (10).
2. the online microwave power detector of MEMS beam type according to claim 1 is characterized in that: the number of described beam type structure is three.
3. the online microwave power detector of MEMS beam type according to claim 1 is characterized in that: the main line CPW signal wire (7) and drive electrode (10) surface coverage of described semi-girder below have silicon nitride medium layer (11).
4. the online microwave power detector of MEMS beam type according to claim 1, it is characterized in that: described terminal microwave power monitoring system (6) comprises terminal resistance (13) and absorbs the thermoelectric pile of terminal resistance (13) heat, the output terminal connecting terminal resistance (13) of described by-pass CPW signal wire (8).
5. the online microwave power detector of MEMS beam type according to claim 1 is characterized in that: described thermoelectric pile is made of four thermopairs, and described thermopair comprises semiconductor thermocouple arm (14) and metal thermocouple arm (15).
6. method for preparing the online microwave power detector of the described MEMS beam type of claim 1, it is characterized in that: described method comprises the steps:
A, preparation gallium arsenide substrate (1): select the semi-insulating GaAs substrate of extension for use, wherein extension N +Gallium arsenide be entrained in 10 18Cm -3More than;
B, photoetching are also isolated the N of extension +Gallium arsenide, the figure and the ohmic contact regions of the semiconductor thermocouple arm (14) of formation thermoelectric pile;
C, anti-carve the N that forms by the figure of the semiconductor thermocouple arm (14) of thermoelectric pile +Gallium arsenide forms N +The gallium arsenide doping content is 10 18Cm -3The semiconductor thermocouple arm (14) of following thermoelectric pile;
D, photoetching: removal will keep the local photoresist of gold germanium nickel/gold;
E, sputter gold germanium nickel/gold;
F, peel off, form the metal thermocouple arm (15) of thermoelectric pile;
G, photoetching: removal will keep the photoresist in tantalum nitride place;
H, sputter tantalum nitride;
I, peel off;
J, photoetching: removal will keep the photoresist in the place of ground floor gold;
K, evaporation ground floor gold;
L, peel off, form main line CPW and by-pass CPW, anchor district (12) and drive electrode (10);
M, anti-carve tantalum nitride, form the terminal resistance (13) that is connected with by-pass CPW signal wire (8) output terminal, its square resistance is 25 Ω/;
N, deposit silicon nitride: with plasma-enhanced chemical vapour deposition technology grown silicon nitride dielectric layer (11);
O, photoetching and etch silicon nitride dielectric layer (11): keep the silicon nitride (11) on semi-girder (3) below main line CPW signal wire (7) and drive electrode (10), terminal resistance (13) and the thermoelectric pile;
P, deposit and photoetching polyimide sacrificial layer: go up the coating polyimide sacrifice layer in gallium arsenide substrate (1); The photoetching polyimide sacrificial layer only keeps the sacrifice layer of semi-girder (3) below;
Q, evaporation titanium/gold/titanium: the down payment that evaporation is used to electroplate;
R, photoetching: removal will be electroplated local photoresist;
S, electrogilding;
T, removal photoresist: removing does not need to electroplate local photoresist;
U, anti-carve titanium/gold/titanium, the corrosion down payment forms main line CPW and by-pass CPW and MEMS semi-girder (3);
V, with in this gallium arsenide substrate (1) thinning back side to 50 μ m and 200 mu m ranges;
W, back side photoetching: remove the photoresist that forms membrane structure (16) place at the gallium arsenide back side;
The gallium arsenide substrate of the below, hot junction of X, etching attenuate terminal resistance (13) and thermoelectric pile forms membrane structure (16);
Y, release polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS semi-girder (3), and deionized water soaks slightly, the absolute ethyl alcohol dehydration, and normal temperature volatilizees down, dries.
CN2010102238069A 2010-07-12 2010-07-12 MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof Expired - Fee Related CN101915870B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010102238069A CN101915870B (en) 2010-07-12 2010-07-12 MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010102238069A CN101915870B (en) 2010-07-12 2010-07-12 MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof

Publications (2)

Publication Number Publication Date
CN101915870A true CN101915870A (en) 2010-12-15
CN101915870B CN101915870B (en) 2012-05-23

Family

ID=43323431

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010102238069A Expired - Fee Related CN101915870B (en) 2010-07-12 2010-07-12 MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof

Country Status (1)

Country Link
CN (1) CN101915870B (en)

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102175909A (en) * 2011-03-08 2011-09-07 东南大学 Micro-electro-mechanical system (MEMS) cantilever type microwave power automatic detection system and detection method and preparation method thereof
CN102323475A (en) * 2011-08-11 2012-01-18 东南大学 Triple channel micromechanics clamped beam indirect type microwave power detector and preparation method
CN102338825A (en) * 2011-08-11 2012-02-01 东南大学 120-degree three-channel micro electro mechanical microwave power sensor and preparation method thereof
CN102360039A (en) * 2011-08-11 2012-02-22 东南大学 Five-port micromachine cantilever-based capacitance type microwave power sensor and manufacturing method thereof
CN102375090A (en) * 2011-09-22 2012-03-14 东南大学 Micromechanical cantilever beam switch online microwave power detector and manufacturing method thereof
CN102385001A (en) * 2011-08-11 2012-03-21 东南大学 Three-channel micro-mechanical cantilever beam indirect-type microwave power sensor and preparation method
CN102393487A (en) * 2011-08-11 2012-03-28 东南大学 72-degree five-port micro-electromechanical microwave power sensor and manufacturing method thereof
CN102403561A (en) * 2011-09-22 2012-04-04 东南大学 Micro-electromechanical cantilever beam switch type microwave power coupler and method for preparing microwave power coupler
CN102411086A (en) * 2011-08-11 2012-04-11 东南大学 Five-port capacitance type microwave power sensor based on micro mechanical clamped beam
CN102411087A (en) * 2011-08-11 2012-04-11 东南大学 90-degree angle four-input micro electromechanical microwave power sensor and preparation method thereof
CN102411088A (en) * 2011-08-11 2012-04-11 东南大学 Four-input micromechanical clamped beam thermoelectric microwave power sensor and preparation method thereof
CN102645579A (en) * 2011-08-11 2012-08-22 东南大学 Four-input micro mechanical cantilever beam thermoelectric microwave power sensor and preparation method
CN103116071A (en) * 2013-01-18 2013-05-22 东南大学 Micro-electromechanical microwave frequency and power detecting system and detecting method thereof
CN103344831A (en) * 2013-06-19 2013-10-09 东南大学 Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof
CN104635036A (en) * 2015-01-15 2015-05-20 南京邮电大学 Micromechanical high-precision cantilever type microwave power detection system and preparation method thereof
CN104655921A (en) * 2015-02-16 2015-05-27 南京邮电大学 Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system
CN106199173A (en) * 2016-07-19 2016-12-07 南京邮电大学 High-precision Microwave power detecting system based on cantilever beam cascade structure and method
CN106771559A (en) * 2017-03-14 2017-05-31 成都中电锦江信息产业有限公司 A kind of high-power on-Line Monitor Device of emitter
CN106841770A (en) * 2017-01-24 2017-06-13 东南大学 Si base micro machineries cantilever beam couples indirect heating type millimeter-wave signal detector
CN106932636A (en) * 2017-05-05 2017-07-07 南京邮电大学 Three capacitance microwave power sensors for referring to cross structure
CN108279330A (en) * 2018-04-26 2018-07-13 南京邮电大学 The piezoelectric type microwave power detector of d33 based on cantilever beam
CN109540973A (en) * 2018-12-03 2019-03-29 中国电子科技集团公司第五十五研究所 A kind of electroplating metal film on-line checking structure and detection method
CN110108930A (en) * 2019-05-23 2019-08-09 深港产学研基地(北京大学香港科技大学深圳研修院) Micro-nano microwave power detector and measurement method based on suspension low dimensional material
CN111044798A (en) * 2019-12-31 2020-04-21 东南大学 MEMS microwave power sensor capable of realizing online self-detection and preparation method thereof
CN111049597A (en) * 2019-12-30 2020-04-21 东南大学 Thermoelectric self-detection MEMS microwave power divider and preparation method thereof
CN112083222A (en) * 2020-09-18 2020-12-15 北京中玮科技有限公司 Thermistor sensor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106841792B (en) * 2017-01-24 2019-03-05 东南大学 Online microwave phase detector device and detection method based on cantilever beam

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101262083A (en) * 2008-03-26 2008-09-10 中国科学院光电技术研究所 A high-separation broadband RF MEMS switch circuit for low band
CN101359760A (en) * 2008-09-18 2009-02-04 中国科学院光电技术研究所 MEMS electromagnetic band gap adjustable band-elimination filter applied to K wave band
CN101414701A (en) * 2008-11-19 2009-04-22 东南大学 Microelectron mechanical socle beam type microwave power coupler and preparation method thereof
US7741936B1 (en) * 2004-09-09 2010-06-22 University Of South Florida Tunable micro electromechanical inductor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7741936B1 (en) * 2004-09-09 2010-06-22 University Of South Florida Tunable micro electromechanical inductor
CN101262083A (en) * 2008-03-26 2008-09-10 中国科学院光电技术研究所 A high-separation broadband RF MEMS switch circuit for low band
CN101359760A (en) * 2008-09-18 2009-02-04 中国科学院光电技术研究所 MEMS electromagnetic band gap adjustable band-elimination filter applied to K wave band
CN101414701A (en) * 2008-11-19 2009-04-22 东南大学 Microelectron mechanical socle beam type microwave power coupler and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
《传感技术学报》 20080430 田涛等 《一种新型MEMS微波功率传感器的设计与模拟》 611-614 1-6 第21卷, 第4期 2 *
《光学精密工程》 20090731 许映林等 《基于单片式微波集成电路的终端式MEMS微波功率传感器》 1656-1659 1-6 第17卷, 第7期 2 *

Cited By (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102175909A (en) * 2011-03-08 2011-09-07 东南大学 Micro-electro-mechanical system (MEMS) cantilever type microwave power automatic detection system and detection method and preparation method thereof
CN102175909B (en) * 2011-03-08 2013-11-20 东南大学 Micro-electro-mechanical system (MEMS) cantilever type microwave power automatic detection system and detection method and preparation method thereof
CN102645579A (en) * 2011-08-11 2012-08-22 东南大学 Four-input micro mechanical cantilever beam thermoelectric microwave power sensor and preparation method
CN102411088B (en) * 2011-08-11 2013-08-07 东南大学 Four-input micromechanical clamped beam thermoelectric microwave power sensor and preparation method thereof
CN102360039A (en) * 2011-08-11 2012-02-22 东南大学 Five-port micromachine cantilever-based capacitance type microwave power sensor and manufacturing method thereof
CN102411086B (en) * 2011-08-11 2013-08-07 东南大学 Five-port capacitance type microwave power sensor based on micro mechanical clamped beam
CN102393487A (en) * 2011-08-11 2012-03-28 东南大学 72-degree five-port micro-electromechanical microwave power sensor and manufacturing method thereof
CN102645579B (en) * 2011-08-11 2014-10-08 东南大学 Four-input micro mechanical cantilever beam thermoelectric microwave power sensor and preparation method
CN102411086A (en) * 2011-08-11 2012-04-11 东南大学 Five-port capacitance type microwave power sensor based on micro mechanical clamped beam
CN102411087A (en) * 2011-08-11 2012-04-11 东南大学 90-degree angle four-input micro electromechanical microwave power sensor and preparation method thereof
CN102411088A (en) * 2011-08-11 2012-04-11 东南大学 Four-input micromechanical clamped beam thermoelectric microwave power sensor and preparation method thereof
CN102338825A (en) * 2011-08-11 2012-02-01 东南大学 120-degree three-channel micro electro mechanical microwave power sensor and preparation method thereof
CN102385001A (en) * 2011-08-11 2012-03-21 东南大学 Three-channel micro-mechanical cantilever beam indirect-type microwave power sensor and preparation method
CN102360039B (en) * 2011-08-11 2013-08-07 东南大学 Five-port micromachine cantilever-based capacitance type microwave power sensor and manufacturing method thereof
CN102323475B (en) * 2011-08-11 2013-08-07 东南大学 Three-channel micromechanical clamped beam indirect microwave power sensor and preparation method
CN102338825B (en) * 2011-08-11 2013-08-07 东南大学 120-degree three-channel micro electro mechanical microwave power sensor and preparation method thereof
CN102393487B (en) * 2011-08-11 2013-08-07 东南大学 72-degree five-port micro-electromechanical microwave power sensor and manufacturing method thereof
CN102323475A (en) * 2011-08-11 2012-01-18 东南大学 Triple channel micromechanics clamped beam indirect type microwave power detector and preparation method
CN102385001B (en) * 2011-08-11 2013-08-07 东南大学 Three-channel micro-mechanical cantilever beam indirect-type microwave power sensor and preparation method
CN102411087B (en) * 2011-08-11 2013-09-25 东南大学 90-degree angle four-input micro electromechanical microwave power sensor and preparation method thereof
CN102403561B (en) * 2011-09-22 2014-06-04 东南大学 Micro-electromechanical cantilever beam switch type microwave power coupler and method for preparing microwave power coupler
CN102403561A (en) * 2011-09-22 2012-04-04 东南大学 Micro-electromechanical cantilever beam switch type microwave power coupler and method for preparing microwave power coupler
CN102375090B (en) * 2011-09-22 2014-08-06 东南大学 Micromechanical cantilever beam switch online microwave power detector and manufacturing method thereof
CN102375090A (en) * 2011-09-22 2012-03-14 东南大学 Micromechanical cantilever beam switch online microwave power detector and manufacturing method thereof
CN103116071A (en) * 2013-01-18 2013-05-22 东南大学 Micro-electromechanical microwave frequency and power detecting system and detecting method thereof
CN103116071B (en) * 2013-01-18 2015-06-10 东南大学 Micro-electromechanical microwave frequency and power detecting system and detecting method thereof
CN103344831B (en) * 2013-06-19 2015-04-29 东南大学 Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof
CN103344831A (en) * 2013-06-19 2013-10-09 东南大学 Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof
CN104635036A (en) * 2015-01-15 2015-05-20 南京邮电大学 Micromechanical high-precision cantilever type microwave power detection system and preparation method thereof
CN104655921B (en) * 2015-02-16 2019-01-01 南京邮电大学 Microwave power detection system and preparation method thereof based on MEMS cantilever beam parallel connection
CN104655921A (en) * 2015-02-16 2015-05-27 南京邮电大学 Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system
CN106199173A (en) * 2016-07-19 2016-12-07 南京邮电大学 High-precision Microwave power detecting system based on cantilever beam cascade structure and method
CN106841770B (en) * 2017-01-24 2019-03-05 东南大学 Si base micro machinery cantilever beam couples indirect heating type millimeter-wave signal detector
CN106841770A (en) * 2017-01-24 2017-06-13 东南大学 Si base micro machineries cantilever beam couples indirect heating type millimeter-wave signal detector
CN106771559A (en) * 2017-03-14 2017-05-31 成都中电锦江信息产业有限公司 A kind of high-power on-Line Monitor Device of emitter
CN106932636A (en) * 2017-05-05 2017-07-07 南京邮电大学 Three capacitance microwave power sensors for referring to cross structure
CN108279330A (en) * 2018-04-26 2018-07-13 南京邮电大学 The piezoelectric type microwave power detector of d33 based on cantilever beam
CN108279330B (en) * 2018-04-26 2023-09-19 南京邮电大学 Cantilever beam-based d33 piezoelectric microwave power sensor
CN109540973B (en) * 2018-12-03 2021-01-19 中国电子科技集团公司第五十五研究所 Online detection structure and detection method for electroplated metal film
CN109540973A (en) * 2018-12-03 2019-03-29 中国电子科技集团公司第五十五研究所 A kind of electroplating metal film on-line checking structure and detection method
CN110108930A (en) * 2019-05-23 2019-08-09 深港产学研基地(北京大学香港科技大学深圳研修院) Micro-nano microwave power detector and measurement method based on suspension low dimensional material
CN111049597A (en) * 2019-12-30 2020-04-21 东南大学 Thermoelectric self-detection MEMS microwave power divider and preparation method thereof
CN111049597B (en) * 2019-12-30 2022-03-11 东南大学 Thermoelectric self-detection MEMS microwave power divider and preparation method thereof
CN111044798A (en) * 2019-12-31 2020-04-21 东南大学 MEMS microwave power sensor capable of realizing online self-detection and preparation method thereof
CN111044798B (en) * 2019-12-31 2021-10-26 东南大学 MEMS microwave power sensor capable of realizing online self-detection and preparation method thereof
CN112083222A (en) * 2020-09-18 2020-12-15 北京中玮科技有限公司 Thermistor sensor
CN112083222B (en) * 2020-09-18 2023-01-10 北京中玮科技有限公司 Thermistor sensor

Also Published As

Publication number Publication date
CN101915870B (en) 2012-05-23

Similar Documents

Publication Publication Date Title
CN101915870B (en) MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof
CN101915871B (en) MEMS (Micro Electronic Mechanical System) clamped beam type online microwave power sensor and production method thereof
CN102243268B (en) Micro-electro-mechanical directional coupling microwave power sensor and preparation method thereof
CN103344831B (en) Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof
CN102360039B (en) Five-port micromachine cantilever-based capacitance type microwave power sensor and manufacturing method thereof
CN103777066A (en) Microelectronic mechanical dual channel microwave power detection system and preparation method thereof
CN102385001B (en) Three-channel micro-mechanical cantilever beam indirect-type microwave power sensor and preparation method
CN102323475B (en) Three-channel micromechanical clamped beam indirect microwave power sensor and preparation method
CN102375090B (en) Micromechanical cantilever beam switch online microwave power detector and manufacturing method thereof
CN105932091A (en) Self-driving two-dimensional molybdenum(IV) telluride homotype heterojunction near infrared electric detector and preparation method thereof
CN103116073A (en) Cantilever beam and direct-type power sensor based microwave detecting system and detecting method thereof
CN104142359B (en) A kind of MEMS gas sensor and processing method thereof
CN103364636B (en) Micro-machinery cantilever capacitance type power sensor-based phase detector and manufacturing method of phase detector
CN103116067B (en) On-line microwave frequency detector and detection method thereof based on clamped beams and indirect-type power sensors
CN102411086B (en) Five-port capacitance type microwave power sensor based on micro mechanical clamped beam
CN103474568A (en) Preparation method of film thermocouple based on electronic printing technology
CN111044798A (en) MEMS microwave power sensor capable of realizing online self-detection and preparation method thereof
CN102435837B (en) Micro electro mechanical system (MEMS) coupling degree-reconfigurable online detector for microwave power and preparation method thereof
CN103149423B (en) A kind of low temperature double-layer isolated type MEMS microwave power detector
CN103116071A (en) Micro-electromechanical microwave frequency and power detecting system and detecting method thereof
CN111044800B (en) State-controllable symmetrical thermoelectric MEMS microwave standing wave meter and preparation method
CN111044797B (en) MEMS integrated microwave standing wave meter capable of tuning frequency state and preparation method thereof
CN105174200A (en) Structure and manufacturing method of novel resonant thin-film thermoelectric converter
CN102338825B (en) 120-degree three-channel micro electro mechanical microwave power sensor and preparation method thereof
CN102411087B (en) 90-degree angle four-input micro electromechanical microwave power sensor and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120523

Termination date: 20140712

EXPY Termination of patent right or utility model