CN101915870A - MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof - Google Patents
MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof Download PDFInfo
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Abstract
The invention discloses an MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and a production method thereof. The microwave power sensor comprises a gallium arsenide substrate, a mainline CPW (Co-Planer Waveguide), a subline CPW, an MEMS cantilever beam type structure and a terminal microwave power monitoring system, wherein the MEMS cantilever beam type structure comprises a cantilever beam and an anchor area; the cantilever beam stretches across the mainline CPW signal line, and the fixed end of the cantilever beam is fixed on the anchor area; the anchor area is connected with the terminal microwave power monitoring system through the subline CPW signal line; and a drive electrode is arranged below the cantilever beam type structure. The MEMS cantilever beam type online microwave power sensor not only has the advantages of the terminal type microwave power sensor, such as low loss and high sensitivity, but also has the advantages of online microwave power measurement, realization of monitoring and not monitoring, integration of the online microwave power sensors with various kinds of coupling factors, and compatibility with the gallium arsenide monolithic microwave integrated circuit.
Description
Technical field
The present invention relates to microelectron-mechanical (hereinafter to be referred as MEMS), relate in particular to online microwave power detector of MEMS beam type and preparation method thereof.
Background technology
In research of microwave technology, microwave power is an important parameter that characterizes the microwave signal feature, and the measurement of microwave power has consequence in applications of wireless technology.Existing microwave power detector is based on the terminal power sensor of diode, thermistor and thermoelectric pile, and they have low-loss and highly sensitive advantage, yet its maximum shortcoming is a full consumption input signal power when measuring microwave power.Development along with microelectric technique, modern PCS Personal Communications System and radar system not only require microwave power detector microwave signal when the power measurement process to be still available, it is online microwave power measurement, and microwave power detector proposed multi-purpose requirement, as realizing monitoring and not monitoring the integrated of two states and the online power sensor of multiple coupled degree.In recent years,, and the MEMS cantilever beam structure carried out deep research, made based on the MEMS technology and realize that the online microwave power detector of beam type three degrees of coupling of above-mentioned functions becomes possibility along with the fast development of MEMS technology.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of online microwave power detector and preparation method of beam type three degrees of coupling based on the MEMS technology, by control MEMS semi-girder driving voltage, make this microwave power detector realize monitoring and not monitoring two states; By the MEMS semi-girder of design different in width and length, change the size of these MEMS semi-girder degrees of coupling, realize online microwave power detector integrated of the different degrees of coupling.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
The online microwave power detector of a kind of MEMS beam type, comprise gallium arsenide substrate, CPW (co-planar waveguide), MEMS beam type structure and terminal microwave power monitoring system: described CPW comprises main line CPW signal wire, by-pass CPW signal wire and CPW ground wire, described main line CPW signal wire and CPW ground wire constitute main line CPW, and described by-pass CPW signal wire and CPW ground wire constitute by-pass CPW; Described MEMS beam type structure comprises semi-girder and anchor district, described semi-girder is across above main line CPW signal wire, the stiff end of semi-girder is fixed in the anchor district, and described anchor district is connected with terminal microwave power monitoring system by by-pass CPW signal wire rather than CPW ground wire; Described cantilever beam structure below is provided with drive electrode.
Described CPW is mainly used in the transmission that realizes microwave signal, adopts gold copper-base alloy.Realize treating the input and output of the microwave signal of power scale by main line CPW, realize being coupled out a certain proportion of main line CPW microwave power on terminal microwave power monitoring system by cantilever beam structure by by-pass CPW.
By to the width of semi-girder and the setting of length, can design different degree of coupling value (being the microwave power number percent that by-pass CPW is coupled to) from main line CPW.
By whether the power supply of drive electrode being controlled the control that can realize to semi-girder DOWN or UP state, when semi-girder is in the UP state, be that semi-girder and main line CPW signal wire are contactless, this moment, semi-girder was coupled microwave power to by-pass CPW hardly from main line CPW, thereby main line CPW was not carried out power monitoring; When semi-girder was in the DOWN state, promptly semi-girder contacted with the CPW signal wire, and this moment, semi-girder was coupled the corresponding proportion microwave power to by-pass CPW from main line CPW, thereby main line CPW is carried out power monitoring.
The number of described beam type structure is three, adopts gold copper-base alloy.The semi-girder width of different beam type structures can be different with length, can realize the different degrees of coupling by the different of each semi-girder width and length, and each beam type structure has independent driving electrodes separately.
The input end part of general by-pass CPW signal wire becomes vertical relation with corresponding main line CPW signal wire.
The main line CPW signal wire and the drive electrode surface coverage of described semi-girder below have the silicon nitride medium layer.
The place that described CPW ground wire is cut off can realize connecting by air bridges.
Described terminal microwave power monitoring system comprises terminal resistance and absorbs the thermoelectric pile of terminal resistance heat, the output terminal connecting terminal resistance of described by-pass CPW signal wire, and the close terminal resistance of thermoelectric pile, but be not connected with terminal resistance.
Terminal resistance adopts tantalum-nitride material to make, absorption is coupled to microwave power on the by-pass CPW by the MEMS semi-girder from main line CPW, and be converted into heat fully, after absorbing this heat near the end (being the hot junction) of the thermoelectric pile of terminal resistance, cause the rising of absorption edge temperature, still keep environment temperature away from the end (being cold junction) of the thermoelectric pile of terminal resistance, because two ends temperature difference, according to the Seebeck effect, produce the output of thermoelectrical potential, realize monitoring to microwave power.
Described thermoelectric pile can be made up of four thermopairs, and described thermopair comprises semiconductor thermocouple arm and metal thermocouple arm, adopts gold and lightly doped GaAs material to constitute.
In order to improve heat by the efficient of terminal resistance to the transmission of the hot junction of thermoelectric pile, and then the temperature difference at raising thermoelectric pile two ends, to improve the sensitivity of microwave power detector, the gallium arsenide substrate etching attenuate below the hot junction of terminal resistance and thermoelectric pile can be formed the substrate film structure.Terminal resistance and thermoelectric pile are covered by the silicon nitride medium layer, and its effect is that the protection terminal resistance is connected with the circuit of by-pass CPW output terminal and thermoelectric pile.
A kind of method for preparing the online microwave power detector of MEMS beam type, described method comprises the steps:
A, preparation gallium arsenide substrate: select the semi-insulating GaAs substrate of extension for use, wherein extension N
+Gallium arsenide be doped to heavy doping, general concentration is more than or equal to 10
18Cm
-3
B, photoetching are also isolated the N of extension
+Gallium arsenide, the figure and the ohmic contact regions of the semiconductor thermocouple arm of formation thermoelectric pile;
C, anti-carve the N that forms by the figure of the semiconductor thermocouple arm of thermoelectric pile
+Gallium arsenide, (general concentration is 10 to form light dope
18Cm
-3Below) the semiconductor thermocouple arm of thermoelectric pile;
D, photoetching: removal will keep the local photoresist of gold germanium nickel/gold;
E, sputter gold germanium nickel/gold;
F, peel off, form the metal thermocouple arm of thermoelectric pile;
G, photoetching: removal will keep the photoresist in tantalum nitride place;
H, sputter tantalum nitride;
I, peel off;
J, photoetching: removal will keep the photoresist in the place of ground floor gold;
K, evaporation ground floor gold;
L, peel off, form main line CPW and by-pass CPW, anchor district and drive electrode;
M, anti-carve tantalum nitride, form the terminal resistance that is connected with by-pass CPW signal wire output terminal, its square resistance is 25 Ω/;
N, deposit silicon nitride: with plasma-enhanced chemical vapour deposition technology grown silicon nitride dielectric layer;
O, photoetching and etch silicon nitride dielectric layer: keep the silicon nitride on semi-girder below main line CPW signal wire and drive electrode, terminal resistance and the thermoelectric pile;
P, deposit and photoetching polyimide sacrificial layer: coating polyimide sacrifice layer on gallium arsenide substrate; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of semi-girder below;
Q, evaporation titanium/gold/titanium: the down payment that evaporation is used to electroplate;
R, photoetching: removal will be electroplated local photoresist;
S, electrogilding;
T, removal photoresist: removing does not need to electroplate local photoresist;
U, anti-carve titanium/gold/titanium, the corrosion down payment forms main line CPW and by-pass CPW and MEMS semi-girder;
V, with this gallium arsenide substrate thinning back side, generally in 50 μ m and 200 mu m ranges;
W, back side photoetching: remove the photoresist that forms the membrane structure place at the gallium arsenide back side;
The gallium arsenide substrate of the below, hot junction of X, etching attenuate terminal resistance and thermoelectric pile forms membrane structure;
Y, release polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS semi-girder, and deionized water soaks slightly, the absolute ethyl alcohol dehydration, and normal temperature volatilizees down, dries.
Beneficial effect: the online microwave power detector of MEMS beam type provided by the invention, the advantage that not only has the terminal type microwave power detector, as low-loss and high sensitivity, and have online microwave power measurement, realize monitoring and do not monitor two states, the multiple degree of coupling online microwave power detector integrated and with the advantage of GaAs single-chip microwave integration circuit compatibility.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is the enlarged diagram of I portion among Fig. 1;
Fig. 3 be among Fig. 2 A-A to sectional view;
Fig. 4 is the enlarged diagram of II portion among Fig. 1.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further explanation.
Be depicted as the online microwave power detector of a kind of MEMS beam type as Fig. 1,2,3 and 4, the terminal microwave power monitoring system 6 that on gallium arsenide substrate 1, is provided with CPW, three MEMS beam type structures and constitutes by terminal resistance 13 and thermoelectric pile.
CPW comprises main line CPW signal wire 7, by-pass CPW signal wire 8 and CPW ground wire 9, described main line CPW signal wire 7 and CPW ground wire 9 constitute main line CPW, described by-pass CPW signal wire 8 and CPW ground wire 9 constitute by-pass CPW, and the ground wire 9 that is cut off is connected by air bridges 17.
Described MEMS beam type structure comprises semi-girder 3 and anchor district 12, described semi-girder 3 is across above main line CPW signal wire 7, the stiff end of semi-girder 3 is fixed in the anchor district 12, described anchor district 12 is connected with terminal resistance 13 by by-pass CPW signal wire 8 rather than CPW ground wire 9, the input end part of by-pass CPW signal wire 8 and corresponding 7 one-tenth vertical relations of main line CPW signal wire.Drive electrode 10 is arranged on semi-girder 3 belows, and each beam type structure below is provided with independent driving electrodes 10 separately, and drive electrode 10 provides electricity to drive by press welding block 18.The main line CPW signal wire 7 of semi-girder 3 belows and drive electrode 10 are covered by silicon nitride medium layer 11.
By designing the cantilever beam structure 3 of three kinds of different in width and length, can set the size of semi-girder 3 degree of coupling when the DOWN attitude, and semi-girder 3 there is not almost power to be coupled out from main line CPW when the UP attitude; Whether powering by the drive electrode 10 of semi-girder 3 is used for controlling cantilever beam structure and whether is in DOWN or UP state, and whether corresponding main line CPW goes up certain proportion power and be coupled out by semi-girder.
Online microwave power detector of the present invention is by the cantilever beam structure 3 of three kinds of different in width of design and length, and the width of respective beam below main line CPW signal wire 7 is constant, design the microwave power detector that degree of coupling size is respectively three kinds of degrees of coupling of 1%, 5% and 10%, and realized online microwave power detector integrated of three kinds of degrees of coupling.Microwave signal 2 to be measured is transmitted on main line CPW, when the drive electrode 10 of three beam type structures does not all apply driving voltage, then these three kinds of beam type structures all are in the UP state, microwave signal power to be measured is not coupled out certain proportion by the beam type structure to by-pass CPW from main line CPW, and the microwave power detector of this moment is in not monitoring state.The drive electrode 10 that when the degree of coupling is 1% beam type structure is applied in driving voltage, the degree of coupling is that 5% and 10% beam type structure all is not applied to driving voltage, the degree of coupling is that 1% semi-girder 3 is in the DOWN state so, microwave signal power degree of being coupled then to be measured is that 1% beam type structure is coupled certain proportion to by-pass CPW from main line CPW, the watt level that is coupled out accounts for 1% of microwave signal power to be measured, yet the degree of coupling is 5% and 10% beam type structure all is not coupled out corresponding proportion to microwave signal power to be measured to by-pass CPW from main line CPW because of all applying driving voltage, in the degree of coupling is that microwave power on the by-pass CPW that connects of 1% beam type structure is absorbed by its relevant terminal resistance 13 fully and transfers heat to, thermoelectric pile near this terminal resistance 13 absorbs this heat, there is the temperature difference in the hot cold two ends that cause thermoelectric pile, thereby on thermoelectric pile, produce the output of thermoelectrical potential, realize the indirect measurement of microwave signal power to be measured, so the degree of coupling is that 1% the online microwave power detector of beam type structure is in monitoring state; In like manner, can realize respectively that the degree of coupling is that 5% or 10% the online microwave power detector of beam type structure is in monitoring state.
The method for preparing the online microwave power detector of above-mentioned MEMS beam type is as follows:
A, preparation gallium arsenide substrate 1: select the semi-insulating GaAs substrate of extension for use, wherein extension N
+The doping content of gallium arsenide is 10
18m
-3, its square resistance is 100～130 Ω/;
B, photoetching are also isolated the N of extension
+Gallium arsenide, the figure and the ohmic contact regions of the semiconductor thermocouple arm 14 of formation thermoelectric pile;
C, anti-carve the N that forms by the figure of the semiconductor thermocouple arm 14 of thermoelectric pile
+Gallium arsenide, forming doping content is 10
17Cm
-3The semiconductor thermocouple arm 14 of thermoelectric pile;
D, photoetching: removal will keep the local photoresist of gold germanium nickel/gold;
E, sputter gold germanium nickel/gold, its thickness is altogether
F, peel off, form the metal thermocouple arm 15 of thermoelectric pile;
G, photoetching: removal will keep the photoresist in tantalum nitride place;
H, sputter tantalum nitride, making its thickness is 1 μ m;
I, peel off;
J, photoetching: removal will keep the photoresist in the place of ground floor gold;
K, evaporation ground floor gold, making its thickness is 0.3 μ m;
L, peel off, form main line CPW and by-pass CPW, anchor district 12 and drive electrode 10;
M, anti-carve tantalum nitride, form the terminal resistance 13 that is connected with by-pass CPW signal wire 8 output terminals, its square resistance is 25 Ω/;
N, deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technology
Thick silicon nitride medium layer 11;
O, photoetching and etch silicon nitride dielectric layer 11: keep the silicon nitride 11 on semi-girder 3 below main line CPW signal wires 7 and drive electrode 10, terminal resistance 13 and the thermoelectric pile;
P, deposit and photoetching polyimide sacrificial layer: on gallium arsenide substrate 1, apply the thick polyimide sacrificial layer of 1.6 μ m; Pit is filled up in requirement, and the thickness of polyimide sacrificial layer has determined MEMS semi-girder 3 and its below in the distance between the silicon nitride medium layer 11 on the signal wire 7 of main line CPW; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of semi-girder 3 belows;
Q, evaporation titanium/gold/titanium, making its thickness is 500/1500/
The down payment that evaporation is used to electroplate;
R, photoetching: removal will be electroplated local photoresist;
S, electrogilding, its thickness are 2 μ m;
T, removal photoresist: removing does not need to electroplate local photoresist;
U, anti-carve titanium/gold/titanium, the corrosion down payment forms main line CPW and by-pass CPW and MEMS semi-girder 3;
V, with this gallium arsenide substrate 1 thinning back side to 100 μ m;
W, back side photoetching: remove the photoresist that forms membrane structure 16 places at the gallium arsenide back side;
The gallium arsenide substrate of below, the hot junction of X, etching attenuate terminal resistance 13 and thermoelectric pile forms membrane structure 16: etching the substrate thickness of 80 μ m, keep the membrane structure of 20 μ m;
Y, release polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS semi-girder 3, and deionized water soaks slightly, the absolute ethyl alcohol dehydration, and normal temperature volatilizees down, dries.
The above only is a preferred implementation of the present invention; be noted that for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. online microwave power detector of MEMS beam type, it is characterized in that: described microwave power detector comprises gallium arsenide substrate (1), CPW, MEMS beam type structure and terminal microwave power monitoring system (6); Described CPW comprises main line CPW signal wire (7), by-pass CPW signal wire (8) and CPW ground wire (9), and described main line CPW signal wire (7) and CPW ground wire (9) constitute main line CPW, and described by-pass CPW signal wire (8) and CPW ground wire (9) constitute by-pass CPW; Described MEMS beam type structure comprises semi-girder (3) and anchor district (12), described semi-girder (3) is across the top at main line CPW signal wire (7), the stiff end of semi-girder (3) is fixed in the anchor district (12), and described anchor district (12) is connected with terminal microwave power monitoring system (6) by by-pass CPW signal wire (8); Described beam type structure below is provided with drive electrode (10).
2. the online microwave power detector of MEMS beam type according to claim 1 is characterized in that: the number of described beam type structure is three.
3. the online microwave power detector of MEMS beam type according to claim 1 is characterized in that: the main line CPW signal wire (7) and drive electrode (10) surface coverage of described semi-girder below have silicon nitride medium layer (11).
4. the online microwave power detector of MEMS beam type according to claim 1, it is characterized in that: described terminal microwave power monitoring system (6) comprises terminal resistance (13) and absorbs the thermoelectric pile of terminal resistance (13) heat, the output terminal connecting terminal resistance (13) of described by-pass CPW signal wire (8).
5. the online microwave power detector of MEMS beam type according to claim 1 is characterized in that: described thermoelectric pile is made of four thermopairs, and described thermopair comprises semiconductor thermocouple arm (14) and metal thermocouple arm (15).
6. method for preparing the online microwave power detector of the described MEMS beam type of claim 1, it is characterized in that: described method comprises the steps:
A, preparation gallium arsenide substrate (1): select the semi-insulating GaAs substrate of extension for use, wherein extension N
+Gallium arsenide be entrained in 10
18Cm
-3More than;
B, photoetching are also isolated the N of extension
+Gallium arsenide, the figure and the ohmic contact regions of the semiconductor thermocouple arm (14) of formation thermoelectric pile;
C, anti-carve the N that forms by the figure of the semiconductor thermocouple arm (14) of thermoelectric pile
+Gallium arsenide forms N
+The gallium arsenide doping content is 10
18Cm
-3The semiconductor thermocouple arm (14) of following thermoelectric pile;
D, photoetching: removal will keep the local photoresist of gold germanium nickel/gold;
E, sputter gold germanium nickel/gold;
F, peel off, form the metal thermocouple arm (15) of thermoelectric pile;
G, photoetching: removal will keep the photoresist in tantalum nitride place;
H, sputter tantalum nitride;
I, peel off;
J, photoetching: removal will keep the photoresist in the place of ground floor gold;
K, evaporation ground floor gold;
L, peel off, form main line CPW and by-pass CPW, anchor district (12) and drive electrode (10);
M, anti-carve tantalum nitride, form the terminal resistance (13) that is connected with by-pass CPW signal wire (8) output terminal, its square resistance is 25 Ω/;
N, deposit silicon nitride: with plasma-enhanced chemical vapour deposition technology grown silicon nitride dielectric layer (11);
O, photoetching and etch silicon nitride dielectric layer (11): keep the silicon nitride (11) on semi-girder (3) below main line CPW signal wire (7) and drive electrode (10), terminal resistance (13) and the thermoelectric pile;
P, deposit and photoetching polyimide sacrificial layer: go up the coating polyimide sacrifice layer in gallium arsenide substrate (1); The photoetching polyimide sacrificial layer only keeps the sacrifice layer of semi-girder (3) below;
Q, evaporation titanium/gold/titanium: the down payment that evaporation is used to electroplate;
R, photoetching: removal will be electroplated local photoresist;
S, electrogilding;
T, removal photoresist: removing does not need to electroplate local photoresist;
U, anti-carve titanium/gold/titanium, the corrosion down payment forms main line CPW and by-pass CPW and MEMS semi-girder (3);
V, with in this gallium arsenide substrate (1) thinning back side to 50 μ m and 200 mu m ranges;
W, back side photoetching: remove the photoresist that forms membrane structure (16) place at the gallium arsenide back side;
The gallium arsenide substrate of the below, hot junction of X, etching attenuate terminal resistance (13) and thermoelectric pile forms membrane structure (16);
Y, release polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS semi-girder (3), and deionized water soaks slightly, the absolute ethyl alcohol dehydration, and normal temperature volatilizees down, dries.
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