CN110108930A - Micro-nano microwave power detector and measurement method based on suspension low dimensional material - Google Patents
Micro-nano microwave power detector and measurement method based on suspension low dimensional material Download PDFInfo
- Publication number
- CN110108930A CN110108930A CN201910434468.4A CN201910434468A CN110108930A CN 110108930 A CN110108930 A CN 110108930A CN 201910434468 A CN201910434468 A CN 201910434468A CN 110108930 A CN110108930 A CN 110108930A
- Authority
- CN
- China
- Prior art keywords
- suspension
- microwave power
- micro
- low dimensional
- measurement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Abstract
The invention discloses micro-nano microwave power detectors and measurement method based on suspension low dimensional material, the temperature sense substrate that independent one-dimensional or two-dimentional high quality heat electric material nanostructure is suspended across two pieces, establishes microwave power-thermo-electrically conversion integrated system.When power scale is passed to a wherein suspension substrate and is allowed to temperature raising, thermoelectric material nanostructure both ends will generate the temperature difference, the temperature difference forms thermoelectrical potential, because the thermo-electrically conversion coefficient of single thermoelectric material is calibrated material intrinsic property, the microwave power that input terminal can be calculated by measuring the thermoelectrical potential in system.The present invention is not necessarily to carry out temperature-compensating amendment to its reference end, but significantly reduces the error of measurement and the influence of environment to reference end real time temperature measurement by system；And since coefficient is filled in the Bake that material can be improved in low dimensional structures, the suspension substrate can substantially reduce thermal losses in addition, and the present invention can effective hoisting power measuring accuracy.
Description
Technical field
The present invention relates to micromation can integrated micro power meter, in particular to it is a kind of to be based on suspension low-dimensional nanometer thermoelectric material
The High-precision Microwave power-measuring device and its measurement method of material.
Background technique
The power output of system is to measure the key index of system performance.For microwave system, microwave power is that characterization is micro-
One important parameter of wave characteristics of signals, can be widely applied to the fields such as microwave communication, radar, navigation, therefore microwave power
It measures most important.By the power sensor type of skill, existing power meter can be divided into 3 classes: thermosensitive resistance type power meter, heat
Galvanic couple type power meter and crystal detection formula power meter.Thermosensitive resistance type power meter uses thermistor power sensing element.Heat
The temperature coefficient of quick resistance value is larger, and the power of measured signal generates heat after being absorbed by thermistor, makes its own temperature liter
Significant changes occur for height, resistance value, using the variation of resistance bridge measurement resistance value, show performance number, but its temperature characterisitic hinders
The raising of power measurement sensitivity, and the influence vulnerable to variation of ambient temperature are hindered.Thermocouple type power meter is then to utilize heat
Thermal junction in galvanic couple type power meter directly absorbs high-frequency signal power, and junction temperature increases, and generates thermoelectric force, potential it is big
The small high frequency power value for being proportional to absorption, the disadvantage is that requiring harshness to environment and test equipment, and the testing time is long.Crystal
High-frequency signal is transformed to low frequency or DC signal using crystal diode wave detector by detecting type power meter, suitably selection work
Point makes the amplitude proportional of geophone output signal in the power of high-frequency signal, but its precision is not high, and needs additional power source
It compensates.
With the development of nano material and micro-nano device manufacturing technology, nano material presents peculiar mechanics, electricity, magnetic
, optical characteristics, sensitivity characteristic and catalysis and photolytic activity open brand-new a research and application field, it is considered to be
The Industrial Revolution again of 21st century.Information, biotechnology, the energy, environment, advanced manufacturing technology and national defence high speed hair
Exhibition necessarily proposes new demand, miniaturization, intelligence, highly integrated, high density storage and ultrafast transmission of component etc. pair to material
The size requirement of material is smaller and smaller, and aerospace, novel military equipment and advanced manufacturing technology etc. want functional form device
Ask higher and higher.The application of functional micro-nano device is just gradually permeated to the every field such as national economy and high and new technology, by band
Give people more multi-functional extraordinary production and living tool, it generates far-reaching influence to the progress of human society, or even changes people
The mode of thinking and life production method.
Summary of the invention
The object of the present invention is to provide a kind of convenient for the integrated high-precision micro-nano microwave power that can be applied to microscale spatial
Meter, based on the intrinsic Seebeck effect of high-quality low dimensional material, establishes power-thermo-electrically conversion integrated system.
Another object of the present invention is designed using the work substrate-thermoelectric material-reference substrate to suspend, and system is defeated
The heat loss for entering end substantially reduces, to improve the influence of measurement accuracy and shielding environment temperature change.
To achieve the above object, design scheme of the invention is as follows:
Low dimensional material nano structure is integrated on hanging micro element, using Seebeck effect, demarcates hanging micro- device
The conversion efficiency of thermoelectric of part calculates the micro- of input terminal by testing the thermoelectrical potential of low dimensional material and the temperature rise of reference end
Wave power.
Preferably, using designed by MEMS and process hanging micro element include two pieces of hanging suspension bases
The input terminal at bottom, the respectively input terminal of system and reference end, suspension substrate is supported by five suspension support arms, wherein two are
Signal transmssion line is inputted for radiofrequency signal, has the micro-strip resistance of vapor deposition to be used as suspension substrate on the input terminal bottom surface of suspension base
Rise mild temperature measurement；The reference end of suspension substrate is supported by six roots of sensation suspension, and surface is vapor-deposited with wire coil as resistance temperature
Degree meter is used to temperature and measures；The thermoelectric material of low-dimensional is nanostructure, is ridden between two pieces of suspension substrates, intermediate gap can root
It is adjusted according to the size of material, electrode is between thermoelectric material and suspension substrate, for reducing thermoelectric material nanostructure
With the thermal contact resistance of suspension substrate, and the position platinum/carbon contacted with electrode in the thermoelectric material of low-dimensional using electron beam-induced is multiple
Object deposition is closed to increase mechanical strength and reduce thermal contact resistance.
The measurement method for being preferably based on the micro-nano microwave power detector of suspension low dimensional material includes following step
It is rapid:
(1.0) according to the Seebeck effect of low-dimensional nano pyroelectric material, the thermoelectricity for having initially set up low dimensional material turns
The relationship between coefficient and input power is changed, that is, demarcates the intrinsic Seebeck coefficient S of the nanostructure of low dimensional material；
(2.0) the low dimensional material as caused by power input and the reference end temperature difference is measured using voltage amplification meter
(06) the thermoelectrical potential V of nanostructureTE；
(3.0) as the thermoelectrical potential V that the good Bake plug coefficient S of known calibration and measurement obtainTE, calculate the microwave function of input terminal
Rate P.
It is preferably based on step described in the measurement method of the micro-nano microwave power detector of suspension low dimensional material
(1.0) further comprise:
(1.1) known microwave power is inputted in input terminal, using the thermometer measure being integrated in suspension substrate by defeated
Enter to hold the temperature rise T of input substrate caused by microwave powerh, while measuring the low dimensional material as caused by the different temperature difference (Δ T)
The thermoelectrical potential V of materialTE；
(1.2) according to the Seebeck effect of thermoelectric material, the Seebeck system to low dimensional material nano structure of calculating
Number (S), and by repeatedly measurement optimization average value, S is obtained by I Implicit Method of formula；Formula I are as follows:
S=-dVTE/ d Δ T (Δ T=Th-Ts) (Ⅰ)
It is preferably based on the measurement method of the micro-nano microwave power detector of suspension low dimensional material, the step
(2.0) include:
(2.1) when the microwave power of input causes thermoelectric material nanostructure both ends to generate temperature difference T, voltage amplification meter is just
Measurement has obtained thermoelectrical potential VTE, the temperature rise of reference end is obtained as resistance thermometer measurement with reference to the resistance thermometer at end
Ts。
Preferably, the step (3.0) includes:
(3.1) according to the Seebeck effect of thermoelectric material, T is obtained by I Implicit Method of formulah:
Th=VTE/S+Ts,
Input power P is calculated using formula II.Formula II are as follows:
P=mcd (Th-Ts)/dt (Ⅱ)
Wherein, m is the quality of the suspension substrate (1) of input terminal, and c is the specific heat capacity of the suspension substrate of input terminal, t input terminal
The time of power input.
According to numerous parameters in the micro-nano microwave power detector provided by the invention based on suspension low dimensional material
It is adjustable:
1, its suspension size of foundation base is adjustable；
2, the width of electrode coil made of its alloy platinum material and length are adjustable；
3, the gap between its suspension substrate is adjustable；
4, the width of its electrode, thickness are adjustable；
5, the material of the nanostructure of its low dimensional material is adjustable；
6, the dimension of the nanostructure of its low dimensional material is adjustable.
Technical scheme is as follows:
Based on the micro-nano microwave power detector of suspension low dimensional material, micro-nano microwave power detector power measurement side
Method the following steps are included:
(1), according to the Seebeck effect of low dimensional material, the thermoelectricity for having initially set up the nanostructure of low dimensional material turns
The relationship between coefficient and input power is changed, that is, demarcates the intrinsic Seebeck coefficient S of the thermoelectric material nanostructure；
(2) the low dimensional material nano as caused by power input and the reference end temperature difference is measured using voltage amplification meter
The thermoelectrical potential V of structureTE, and the temperature of the resistance thermometer measurement reference end suspension substrate using reference end；
(3) as the thermoelectrical potential V that the good Bake plug coefficient S of known calibration, measurement obtainTEWith reference junction temperature Ts, calculate input
The microwave power P at end.
Micro-nano microwave power detector provided by the invention based on suspension low dimensional material, compared with prior art,
Present invention has the advantage that the work substrate-thermoelectric material-reference substrate micro-nano structure to suspend greatly reduces power biography
Sensor loss hot in power-thermo-electrically conversion process improves measurement accuracy to effectively reduce measurement error；It utilizes
The intrinsic thermoelectric conversion coefficient of single low dimensional material nano structure, that is, Seebeck coefficient, establish power-electricity
Linear relationship substantially increases the linearity and accuracy of measurement；And the nanostructure of low dimensional material can be lifted at
Near fermi level the density of states of electronics improves measuring system to improve the Seebeck coefficient of thermoelectric material itself
Precision；In addition system described in the invention is done by the real time temperature measurement to reference end suspension substrate without additional power source
Temperature-compensating amendment, greatly reduces influence of the variation of ambient temperature to power measurement；Micro-nano described in the invention simultaneously is micro-
The multiple parameters of wave power sensor are adjustable, material and size including all parts, therefore are done according to use environment and space
Elasticity design.
Detailed description of the invention
Fig. 1 is the top view of the micro-nano microwave power detector of suspension low dimensional material；
Fig. 2 is the cross-sectional view of the micro-nano microwave power detector of suspension low dimensional material；
Fig. 3 is heat conduction model schematic diagram under stable state；
Fig. 4 is low dimensional material thermoelectrical potential instrumentation plan；
Fig. 5 is micro-nano of the single bismuth selenium nano-belt as the suspension low dimensional material of low dimensional material nano structure
Microwave power detector figure；
In figure: 1- suspension substrate；The support of 2- suspension；3- transmission line；4- micro-strip resistance；5- resistance thermometer；6- thermoelectricity
Material；7- electrode；8- platinum/carbon complex.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
To achieve the above object, technical scheme is as follows.
As shown in Figures 1 to 5, the micro-nano microwave power detector of suspension low dimensional material includes two adjacent and be spaced
There is the suspension substrate 1 of the low stress of a fixed gap, each suspension substrate 1 is supported by five to six roots of sensation suspension support arm 2 respectively；Microwave
Signal is passed to the input terminal of suspension substrate by transmission line 3, and is deposited with micro-strip resistance 4 by its surface and makes 1 liter of suspension substrate
Temperature, 2 surface of partial suspended support arm is deposited with metal and is connected with the circuit of outer substrate, to measure the variation of micro-strip resistance 4
To determine the temperature of suspension substrate 1；The suspension substrate 1 of reference end is supported by six roots of sensation suspension support arm 2, and surface is deposited with resistance
Thermometer 5 is used for the temperature of real-time measurement suspension substrate 1；Design has wide and flat by platinum product in each suspension substrate 1
Contact electrode of the electrode 7 as 6 nanostructure of thermoelectric material of low-dimensional, the thermoelectric material 6 to measure low-dimensional made of expecting are received
The thermoelectric force V of rice structureTE；6 nanostructure of thermoelectric material of low-dimensional is overlapped between two pieces of suspension substrates 1, and in contact zone
Domain platinum/carbon complex deposition 8 is to reinforce and reduce thermal contact resistance and contact resistance.
Steps are as follows for the micro-nano microwave power detector power measurement of suspension low dimensional material:
Step 1: the intrinsic Seebeck coefficient S of calibration low dimensional material.
The T under a certain constant temperature1In the specified microwave power P of input terminal input, the suspension substrate 1 is due to the Joule heat of generation
Temperature is caused to rise Th, partial heat conducted by the nanostructure of the thermoelectric material 6 of low-dimensional to the suspension substrate 1 of reference end,
It is allowed to temperature to increase to be Ts, as shown in Figure 3.It is micro- in each suspension substrate 1 using being deposited on according to temperature-coefficient of electrical resistance formula III
Strip resistance 4 and the measurement of resistance thermometer 5 obtain ThAnd Ts。
According to Seebeck effect, the temperature difference at the nanostructure both ends of low dimensional material 6 can generate thermoelectrical potential VTE, using outer
It connects voltage amplification measurement and measures thermoelectrical potential VTE, as shown in Figure 4.The low-dimensional under certain specific temperature is calculated further according to formula I
Thermoelectric material 6 nanostructure for input power be P1Intrinsic Seebeck coefficientSame scaling method is in difference
At a temperature of calibration is carried out to the nanostructure of the thermoelectric material 6 of the low-dimensional that Seebeck coefficient S can be obtained is bent with the variation of temperature T
Line.
It is illustrated in figure 5 suspension micro-nano device of the single bismuth selenium nano-belt as the nanostructure of the thermoelectric material 6 of low-dimensional
Part, the Seebeck coefficient S for measuring the thermoelectric material 6 of low-dimensional are as shown in Figure 5 with the change curve of temperature T.By optimizing the curve
Establish the database of the nanostructure Seebeck coefficient S of the thermoelectric material 6 of the low-dimensional.
Step 2: when having microwave power input, thermoelectrical potential V is measuredTEAnd refer to suspension substrate temperature rise Δ Ts。
In a certain operating ambient temperature TxUnder, when microwave power inputs, resistance coil made of input terminal alloy platinum material is produced
Raw Joule heat will make the temperature of suspension substrate 1 be higher than environmental testing temperature (Δ Th), partial heat will pass through the heat of low-dimensional
The nanostructure of electric material 6 is transmitted to reference end suspension substrate 1 to make its temperature increase (Δ Ts).The electric material of low-dimensional heat
Temperature difference (Δ T=Δ T of 6 nanostructure because of both endsh-ΔTs) and the thermoelectrical potential V of generationTEThen by external voltage amplifier
Directly measure；Temperature resistance coil made of alloy platinum material of reference end suspension substrate 1 accurately measures Δ by quadrangle ohm method
Ts.Choose corresponding operating ambient temperature T automatically from the nanostructure Seebeck coefficient database of the electric material 6 of low-dimensional heatx
'sThe temperature rise of input terminal suspension substrate 1 can be calculated according to formula I
Step 3: the microwave power P of input terminal is calculated.
According to heat absorption formula IV:
P=mc (d Δ Th/dt) (Ⅳ)
Wherein, m is the quality of the input terminal of suspension substrate 1, and c is the specific heat capacity of the input terminal of suspension substrate, when t is temperature rise
Between.Because of the material of suspension substrate 1, such as silicon nitride SiNxWith density it is known that so m can directly be calculated according to size, c
It can directly find.
The above is merely preferred embodiments of the present invention, be not intended to limit the invention, it is all in spirit of the invention and
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within principle.
Claims (6)
1. the micro-nano microwave power detector based on suspension low dimensional material, which is characterized in that by low dimensional material nano
Structure is integrated on hanging micro element, using Seebeck effect, demarcates the conversion efficiency of thermoelectric of hanging micro element, low by testing
The thermoelectrical potential of thermoelectric material (6) and the temperature rise of reference end are tieed up, the microwave power of input terminal is calculated.
2. the micro-nano microwave power detector according to claim 1 based on suspension low dimensional material, which is characterized in that benefit
Designed by MEMS and the hanging micro element of processing includes two pieces of hanging suspension substrates (1), respectively system
Input terminal and reference end, the input terminal of suspension substrate (1) supported by three suspension support arms (2), separately have two for signal pass
Defeated line (3) inputs for radiofrequency signal, has the micro-strip resistance (4) of vapor deposition to be used as on the input terminal bottom surface of suspension base (1) and suspends
Substrate (1) rises mild temperature measurement；The reference end of suspension substrate (1) supports (2) by six roots of sensation suspension, and surface is vapor-deposited with metal wire
Circle is as resistance thermometer (5) for temperature measurement；The thermoelectric material (6) of low-dimensional is nanostructure, rides over two pieces of suspension substrates
(1) between, intermediate gap can be adjusted according to the size of material, and electrode (7) is located at thermoelectric material (6) and suspension substrate
(1) between, exist for reducing the thermal contact resistance of thermoelectric material (6) nanostructure Yu suspension substrate (1), and using electron beam-induced
The position platinum that the thermoelectric material (6) of low-dimensional is contacted with electrode (7)/carbon complex (8) deposition is connect with increasing mechanical strength and reducing
Touch thermal resistance.
3. the measurement method of the micro-nano microwave power detector according to claim 2 based on suspension low dimensional material,
It is characterized in that, method includes the following steps:
(1.0) according to the Seebeck effect of low-dimensional nano pyroelectric material, the heat to electricity conversion of low dimensional material (6) has been initially set up
Relationship between coefficient and input power, that is, demarcate the intrinsic Seebeck coefficient S of the nanostructure of low dimensional material (6)；
(2.0) it is received using voltage amplification meter measurement low dimensional material (06) as caused by power input and the reference end temperature difference
The thermoelectrical potential V of rice structureTE；
(3.0) as the thermoelectrical potential V that the good Bake plug coefficient S of known calibration and measurement obtainTE, calculate the microwave power P of input terminal.
4. microwave power detector and measurement method according to claim 3 based on suspension low dimensional material, feature
It is, the step (1.0) includes:
(1.1) known microwave power is inputted in input terminal, using the thermometer measure being integrated on suspension substrate (1) by inputting
Hold the temperature rise T of input substrate caused by microwave powerh, while measuring the low dimensional material as caused by the different temperature difference (Δ T)
(6) thermoelectrical potential VTE；
(1.2) according to the Seebeck effect of thermoelectric material, the Seebeck coefficient to low dimensional material nano structure of calculating
(h), and by repeatedly measurement optimization average value, S is obtained by I Implicit Method of formula；Formula I are as follows:
S=-dVTE/ d Δ T (Δ T=Th-Ts) (Ⅰ)。
5. the measurement method of the micro-nano microwave power detector according to claim 3 based on suspension low dimensional material,
It is characterized in that, the step (2.0) includes:
(2.1) when the microwave power of input causes thermoelectric material nanostructure both ends to generate temperature difference T, voltage amplification meter is just measured
Thermoelectrical potential V is obtainedTE, the temperature rise T of reference end is obtained as resistance thermometer measurement with reference to the resistance thermometer (5) at ends。
6. the measurement method of the micro-nano microwave power detector according to claim 3 based on suspension low dimensional material,
It is characterized in that, the step (3.0) includes:
(3.1) according to the Seebeck effect of thermoelectric material, T is obtained by I Implicit Method of formulah:
Th=VTE/S+Ts,
Input power P is calculated using formula II.Formula II are as follows:
P=mcd (Th-Ts)/dt (Ⅱ)
Wherein, m is the quality of the suspension substrate (1) of input terminal, and c is the specific heat capacity of the suspension substrate (1) of input terminal, t input terminal
The time of power input.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910434468.4A CN110108930A (en) | 2019-05-23 | 2019-05-23 | Micro-nano microwave power detector and measurement method based on suspension low dimensional material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910434468.4A CN110108930A (en) | 2019-05-23 | 2019-05-23 | Micro-nano microwave power detector and measurement method based on suspension low dimensional material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110108930A true CN110108930A (en) | 2019-08-09 |
Family
ID=67491865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910434468.4A Pending CN110108930A (en) | 2019-05-23 | 2019-05-23 | Micro-nano microwave power detector and measurement method based on suspension low dimensional material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110108930A (en) |
Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101546805A (en) * | 2009-03-04 | 2009-09-30 | 中国科学院广州能源研究所 | Preparation method of high-quality-factor low-dimensional-oxide nanometer thermoelectric new material |
| CN101692123A (en) * | 2009-09-25 | 2010-04-07 | 东南大学 | Micro-electromechanical microwave loss compensating microwave power detector |
| CN201497775U (en) * | 2009-09-25 | 2010-06-02 | 东南大学 | Microwave power-detecting device |
| CN101915870A (en) * | 2010-07-12 | 2010-12-15 | 东南大学 | MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof |
| CN102099937A (en) * | 2008-07-18 | 2011-06-15 | 三星电子株式会社 | Thermoelectric materials and chalcogenide compounds |
| CN102305807A (en) * | 2011-05-25 | 2012-01-04 | 清华大学 | Method for measuring Seebeck coefficient of micro/nano thermoelectric materials or devices |
| CN102360039A (en) * | 2011-08-11 | 2012-02-22 | 东南大学 | Five-port micromachine cantilever-based capacitance type microwave power sensor and manufacturing method thereof |
| CN102486494A (en) * | 2010-12-01 | 2012-06-06 | 财团法人工业技术研究院 | Thermoelectric power consumption detection device and method |
| CN103043602A (en) * | 2013-01-05 | 2013-04-17 | 江苏物联网研究发展中心 | Fabrication method of measuring mechanism for seebeck coefficient of nano-scale material |
| KR20150007686A (en) * | 2013-07-12 | 2015-01-21 | 서울대학교산학협력단 | Thermoelectric property measurement system |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104635036A (en) * | 2015-01-15 | 2015-05-20 | 南京邮电大学 | Micromechanical high-precision cantilever type microwave power detection system and preparation method thereof |
| JP2017040556A (en) * | 2015-08-20 | 2017-02-23 | 国立研究開発法人物質・材料研究機構 | Sample support, electrothermal characteristic evaluation device, method of evaluating electrothermal characteristic, and method of evaluating electrode |
| WO2017169462A1 (en) * | 2016-03-29 | 2017-10-05 | 国立研究開発法人産業技術総合研究所 | Method for measuring thermophysical property and device for measuring thermophysical property |
| CN108279405A (en) * | 2018-03-14 | 2018-07-13 | 东南大学 | Adaption radar ratio method cantilever beam micro-nano microwave detects and demodulation monolithic system |
| CN108414829A (en) * | 2018-03-14 | 2018-08-17 | 东南大学 | Micro-nano electronic mechanical system direct-heating type microwave radiometer based on cantilever beam |
| CN108594176A (en) * | 2018-03-14 | 2018-09-28 | 东南大学 | The direct micro-nano microwave of ratio method cantilever beam detects demodulating system in adaption radar |
| CN208172092U (en) * | 2018-04-17 | 2018-11-30 | 南京邮电大学 | A kind of High-precision Microwave power detecting system based on shunt effect |
-
2019
- 2019-05-23 CN CN201910434468.4A patent/CN110108930A/en active Pending
Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102099937A (en) * | 2008-07-18 | 2011-06-15 | 三星电子株式会社 | Thermoelectric materials and chalcogenide compounds |
| CN101546805A (en) * | 2009-03-04 | 2009-09-30 | 中国科学院广州能源研究所 | Preparation method of high-quality-factor low-dimensional-oxide nanometer thermoelectric new material |
| CN101692123A (en) * | 2009-09-25 | 2010-04-07 | 东南大学 | Micro-electromechanical microwave loss compensating microwave power detector |
| CN201497775U (en) * | 2009-09-25 | 2010-06-02 | 东南大学 | Microwave power-detecting device |
| CN101915870A (en) * | 2010-07-12 | 2010-12-15 | 东南大学 | MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof |
| CN102486494A (en) * | 2010-12-01 | 2012-06-06 | 财团法人工业技术研究院 | Thermoelectric power consumption detection device and method |
| CN102305807A (en) * | 2011-05-25 | 2012-01-04 | 清华大学 | Method for measuring Seebeck coefficient of micro/nano thermoelectric materials or devices |
| CN102360039A (en) * | 2011-08-11 | 2012-02-22 | 东南大学 | Five-port micromachine cantilever-based capacitance type microwave power sensor and manufacturing method thereof |
| CN103043602A (en) * | 2013-01-05 | 2013-04-17 | 江苏物联网研究发展中心 | Fabrication method of measuring mechanism for seebeck coefficient of nano-scale material |
| KR20150007686A (en) * | 2013-07-12 | 2015-01-21 | 서울대학교산학협력단 | Thermoelectric property measurement system |
| CN104614584A (en) * | 2015-01-15 | 2015-05-13 | 南京邮电大学 | Micro-mechanical, high-precision and fixed supporting beam type microwave power detecting system and preparation method thereof |
| CN104635036A (en) * | 2015-01-15 | 2015-05-20 | 南京邮电大学 | Micromechanical high-precision cantilever type microwave power detection system and preparation method thereof |
| JP2017040556A (en) * | 2015-08-20 | 2017-02-23 | 国立研究開発法人物質・材料研究機構 | Sample support, electrothermal characteristic evaluation device, method of evaluating electrothermal characteristic, and method of evaluating electrode |
| WO2017169462A1 (en) * | 2016-03-29 | 2017-10-05 | 国立研究開発法人産業技術総合研究所 | Method for measuring thermophysical property and device for measuring thermophysical property |
| CN108279405A (en) * | 2018-03-14 | 2018-07-13 | 东南大学 | Adaption radar ratio method cantilever beam micro-nano microwave detects and demodulation monolithic system |
| CN108414829A (en) * | 2018-03-14 | 2018-08-17 | 东南大学 | Micro-nano electronic mechanical system direct-heating type microwave radiometer based on cantilever beam |
| CN108594176A (en) * | 2018-03-14 | 2018-09-28 | 东南大学 | The direct micro-nano microwave of ratio method cantilever beam detects demodulating system in adaption radar |
| CN208172092U (en) * | 2018-04-17 | 2018-11-30 | 南京邮电大学 | A kind of High-precision Microwave power detecting system based on shunt effect |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106017696B (en) | Thermal resistance thin film thermoelectric heap-type transient heat flow meter and preparation method | |
| CN102305807B (en) | Method for measuring Seebeck coefficient of micro/nano thermoelectric materials or devices | |
| EP2799825A1 (en) | Coupling-based non-contact type temperature measurement system and measurement method thereof | |
| CN108562381B (en) | Thin film sensor for measuring heat flow in high-temperature environment and manufacturing method thereof | |
| CN106840435A (en) | Transient temperature and heat flow density translocation sensor and preparation method thereof | |
| CN103512682A (en) | Slice array heat-flow sensor | |
| CN106768493A (en) | A kind of film TR heat flow transducer of series-fed | |
| JP3226715B2 (en) | Measuring device | |
| CN109187628A (en) | The test method of thermal contact resistance between micro-/ nano thin material is measured based on 3 ω methods | |
| CN112013951A (en) | Thermal temperature difference type particle vibration velocity sensor | |
| CN111238672B (en) | Superconducting tape dynamic temperature measurement method based on magnetic microscopy | |
| CN108593956A (en) | Micro- current meter of double mode and preparation method thereof | |
| CN103983365A (en) | Multi-measuring-head transient radiation heat flow meter and measuring method for thermal radiation heat flow density | |
| CN112595750B (en) | Near-field thermal radiation detector based on transient plane heat source and measuring method | |
| CN110108930A (en) | Micro-nano microwave power detector and measurement method based on suspension low dimensional material | |
| CN109709386B (en) | Three-channel microwave power sensor | |
| CN101285786B (en) | Method for harmonic detection technology used in microchannel local convection heat exchange coefficient determination | |
| CN215893841U (en) | Novel temperature sensor's that hexagon was arranged high accuracy test device | |
| CN215525613U (en) | Micro-nano material thermoelectric performance in-situ comprehensive measurement device based on harmonic detection | |
| Immonen et al. | Development of a vertically configured mems heat flux sensor | |
| CN101038312A (en) | Method for measuring surface temperature of micro-hotplate | |
| Cerimovic et al. | Bidirectional micromachined flow sensor featuring a hot film made of amorphous germanium | |
| CN208060548U (en) | The micro- current meter of double mode | |
| Chun et al. | Design and fabrication of micro heat flux sensor | |
| CN102944323B (en) | A kind of micro-temperature sensor based on true Root Mean square Converter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190809 |
|
| WD01 | Invention patent application deemed withdrawn after publication |