CN208172092U - A kind of High-precision Microwave power detecting system based on shunt effect - Google Patents
A kind of High-precision Microwave power detecting system based on shunt effect Download PDFInfo
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- CN208172092U CN208172092U CN201820541952.8U CN201820541952U CN208172092U CN 208172092 U CN208172092 U CN 208172092U CN 201820541952 U CN201820541952 U CN 201820541952U CN 208172092 U CN208172092 U CN 208172092U
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- microwave power
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- 230000000694 effects Effects 0.000 title claims abstract description 21
- 230000005540 biological transmission Effects 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 238000000280 densification Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000001514 detection method Methods 0.000 abstract description 23
- 238000005516 engineering process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 230000005678 Seebeck effect Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000896 Manganin Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013142 basic testing Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
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Abstract
The utility model discloses a kind of High-precision Microwave power detecting system based on shunt effect, the detection system includes substrate, coplanar waveguide transmission line, fine and close resistance and sensor, the material of the substrate is coplanar waveguide transmission line described in GaAs, fine and close resistance and sensor are all set on substrate, the coplanar waveguide transmission line includes the first co-planar waveguide center signal line, second co-planar waveguide center signal line and ground wire, the two sides of the first co-planar waveguide center signal line and the second co-planar waveguide center signal line are arranged in the ground wire, the sensor is Thermoelectric Microwave Power Sensor, the Thermoelectric Microwave Power Sensor includes thermoelectric pile and two first terminal resistance and second terminal resistance in parallel.High-precision Microwave power detecting system based on shunt effect can not only extend the dynamic range of detection power, but also the precision of detection power can be improved, while have many advantages, such as small in size, structure is simple, convenient for integrating.
Description
Technical field
The utility model relates to a kind of High-precision Microwave power detecting system based on shunt effect, can be used for microelectronics machine
Tool systems technology.
Background technique
The development of microwave technology based on MEMS (MEMS) has become the weight of a national science and technology levels
Indicate.In the research of the links such as signal generation, transmission and the reception of microwave, the measurement of microwave power is essential
Basic test technology.Currently, microwave power detection tool the most most common is the thermoelectricity type micro-wave function based on pyroelectric effect
Rate sensor.But traditional thermoelectric (al) type MEMS microwave power detector is small with measurement microwave signal amplitude, precision is not high
Disadvantage.In recent years, the continuous development with microelectronic technique level and the continuous research to alloy material, so that copper-manganese is caused
The detection that cipher telegram resistance is applied to microwave power is possibly realized.
Utility model content
The purpose of this utility model is exactly to propose a kind of based on shunting to solve the above-mentioned problems in the prior art
The High-precision Microwave power detecting system of effect.
The purpose of this utility model will be realized through the following technical scheme：A kind of high-precision based on shunt effect is micro-
Wave power detection system, including substrate, coplanar waveguide transmission line, fine and close resistance and sensor, the coplanar waveguide transmission line, cause
Cipher telegram resistance and sensor are all set on substrate, and the coplanar waveguide transmission line includes the first co-planar waveguide center signal, second
Co-planar waveguide center signal line and ground wire, the ground wire are arranged in the first co-planar waveguide center signal line and the second co-planar waveguide
The two sides of heart signal wire.
Preferably, the material of the substrate is GaAs.
Preferably, the sensor is Thermoelectric Microwave Power Sensor, and the Thermoelectric Microwave Power Sensor includes
Thermoelectric pile and two first terminal resistance and second terminal resistance in parallel, first terminal resistance and second terminal resistor coupled in parallel are set
It sets in the two sides of the second co-planar waveguide center signal line, it is coplanar that the both ends of the first terminal resistance have been electrically connected second
The second co-planar waveguide center signal has been electrically connected in waveguide core signal wire and ground wire, the both ends of the second terminal resistance
Line and ground wire, the thermoelectric pile and first terminal resistance and second terminal resistive gaps are arranged, and thermoelectric pile setting is whole first
The right side of resistance and second terminal resistance is held, thermoelectric pile has cold and hot end, cold end is provided with voltage output end.
Preferably, the fine and close resistance is arranged in the first co-planar waveguide center signal line and the second co-planar waveguide center signal
The centre of line.
Preferably, the fine and close resistance is using copper-manganese material as material.
Preferably, the two sides of the fine and close resistance are deposited with insulating layer silicon nitride, in the outer outgrowth of insulating layer silicon nitride
There is metal as voltage tester port.
Preferably, the metal is aluminium.
The advantages of technical solutions of the utility model, is mainly reflected in：
1, the dynamic range of detectable signal expands, and when microwave signal is weaker, the electric current almost all of generation is by by manganese
The fine and close resistance of copper product is absorbed, and obtains the ohmically voltage value by the voltage detecting circuit right above co-planar waveguide,
Microwave power to be measured can be found out according to the proportionate relationship between voltage and power, this process does not consume microwave signal substantially, real
Existing on-line measurement.When microwave signal is stronger, Thermoelectric Microwave Power Sensor is based on Seebeck effect to the microwave not being lost
Signal is measured again, to extend the dynamic range of detection signal power.
2, testing result precision improves, based on the detection system of shunt effect in the biggish microwave signal of measurement power,
The output end of fine and close resistance and thermoelectric pile can all have apparent voltage output, this makes when measuring High-Power Microwave signal, single
Detection power under position variation voltage is smaller, to improve detection accuracy well.
3, small using manganin as the inductance of the fine and close resistance of material, temperature drift coefficient is good, has as sampling resistor excellent
Good electrology characteristic.
High-precision Microwave power detecting system based on shunt effect can not only extend the dynamic range of detection power, and
And the precision of detection power can also be improved, while there is many advantages, such as small in size, structure is simple, convenient for integrating.
Detailed description of the invention
Fig. 1 is a kind of structural representation of High-precision Microwave power detecting system based on shunt effect of the utility model
Figure.
Fig. 2 is a kind of schematic diagram of High-precision Microwave power detecting system based on shunt effect of the utility model.
Specific embodiment
The purpose of this utility model, advantage and feature will carry out figure by the non-limitative illustration of preferred embodiment below
Show and explains.These embodiments are only the prominent examples using technical solutions of the utility model, all to take equivalent replacement or wait
Effect transformation and formed technical solution, all fall within the requires of the utility model protection within the scope of.
The utility model discloses a kind of High-precision Microwave power detecting system based on shunt effect, as shown in Figure 1, packet
Substrate, coplanar waveguide transmission line, fine and close resistance 1 and sensor are included, the material of the substrate is GaAs.The co-planar waveguide passes
Defeated line, fine and close resistance 1 and sensor are all set on substrate, and the coplanar waveguide transmission line is believed including the first co-planar waveguide center
Number line 10, the second co-planar waveguide center signal line 20 and ground wire 30, the ground wire 30 are arranged in the first co-planar waveguide center signal
The two sides of line 10 and the second co-planar waveguide center signal line 20.
The sensor is Thermoelectric Microwave Power Sensor, and the Thermoelectric Microwave Power Sensor includes thermoelectric pile 2
With two first terminal resistance 3 and second terminal resistance 4 in parallel, first terminal resistance 3 and second terminal resistance 4 are arranged in parallel
In the two sides of the second co-planar waveguide center signal line 20, it is coplanar that the both ends of the first terminal resistance have been electrically connected second
The second co-planar waveguide center has been electrically connected in waveguide core signal wire 20 and ground wire 30, the both ends of the second terminal resistance
Signal wire 20 and ground wire 30, the thermoelectric pile 2 and 4 gap setting of first terminal resistance 3 and second terminal resistance, and thermoelectric pile is set
It sets on the right side of first terminal resistance 3 and second terminal resistance 4, thermoelectric pile has cold and hot end, cold end is provided with voltage
Output end 5.
The densification resistance 1 is arranged in the first co-planar waveguide center signal line 10 and the second co-planar waveguide center signal line 20
Centre, it is described densification resistance 1 using copper-manganese material as material.It is small as the inductance of the fine and close resistance of material using manganin, temperature
It is good to float coefficient, there is excellent electrology characteristic as sampling resistor.In view of microwave signal is easy from fine and close resistance to unofficial biography
It broadcasts, causes the loss of measured signal, cross metal in fine and close resistance two sides deposition insulating layer silicon nitride, and in the two sides of silicon nitride,
As voltage tester end, specifically, the two sides of the densification resistance 1 are deposited with insulating layer silicon nitride 6, in insulating layer silicon nitride 6
Outside be deposited with metal as voltage tester port 7, the metal is aluminium.The insulating layer silicon nitride of fine and close resistance two sides is effective
Ground reduces the loss of microwave signal, further increases the measurement accuracy of system.Compared to silver, copper and gold, metallic aluminium comes
Source is extensive, and has higher conductivity and lower density, and there is fine and close oxide film protection on surface, using it as output electrode
Material while reducing the detection system cost of manufacture, also considerably increase the measuring accuracy of output voltage.
When microwave power is transmitted from coplanar waveguide transmission line, can be generated on center signal line directly proportional to power
Electric current can generate voltage when electric current is transmitted on fine and close resistance according to Ohm's law, survey by peripheral detection circuit to voltage
Examination end is tested to obtain voltage value, can obtain and its one-to-one microwave signal power value.When microwave signal is passed through
After fine and close resistance incoming terminal resistance, terminal resistance absorbs microwave, and temperature increases, due to the Seebeck effect of thermoelectric pile, heat letter
It number is converted into and to be exported with the one-to-one voltage signal of microwave power from test lead, determine heat by peripheral voltage detection circuit
The voltage of pile output end, the size of you can get it microwave power.
As shown in Fig. 2, when microwave power to be measured is smaller, since the electric current of generation is smaller, only on copper-manganese densification resistance
There is voltage generation；And when microwave power to be measured is larger, since the electric current of generation is larger, the test electrode of thermoelectric pile and densification electricity
There is voltage generation in resistance, using this detection mode while extending microwave power signal dynamic detection range, effectively
Improve the detection accuracy for High-Power Microwave signal.
Specifically, microwave signal is divided into fine and close resistance, thermoelectric pile this two-way successively to measure, they is measured to the sum of power
As the actual power of microwave signal to be measured, this had not only extended system for the detection range of microwave signal, but improve for
The detection accuracy of HIGH-POWERED MICROWAVES signal, in the technical scheme, the fine and close resistance terminal of the power of microwave signal to be measured measure
The sum of the power that power and thermoelectric pile end measure.
Microwave signal to be measured can generate on center signal line when transmitting on coplanar waveguide transmission line and be proportional to microwave letter
The electric current of number power, when by fine and close resistance, part microwave signal is converted into fine and close ohmically voltage, and it is fine and close to pass through measurement
The voltage of resistance output end can be obtained the size with the one-to-one microwave power of voltage value.It is not absorbed by fine and close resistance
Microwave signal, continue to be transmitted to terminal resistance along the second co-planar waveguide center signal line 20, terminal resistance absorbs electric current temperature
Degree increases, so that generating temperature difference between the hot end and cold end of the thermoelectric pile around terminal resistance, is based on Seebeck effect,
The output end of thermoelectric pile generates the DC voltage for being proportional to microwave signal power, by measuring the voltage of thermoelectric pile output end, i.e.,
It can get the size with the one-to-one microwave power of voltage value.
When microwave signal is transmitted on CPW center signal line, the electric current directly proportional to microwave signal power can be generated.When
When microwave power signal to be measured is smaller, since the electric current of generation is smaller, electromotive force is generated on only fine and close resistance；When microwave to be measured
When power is larger, since the electric current of generation is larger, the output end of fine and close resistance and thermoelectric pile has electromotive force generation.According to generation
Electromotive force and microwave power be one-to-one relationship, so that it may measure the power of microwave signal.
The detection system is the microwave power detection system that a kind of measuring amplitude range is big, detection accuracy is high, program base
In MEMS technology, there are the principal advantages of MEMS, such as small in size, light-weight, low in energy consumption, and and monolithic integrated microwave circuit
（MMIC）Technique is completely compatible, and convenient for integrated, this series of advantages is that traditional microwave power detector is incomparable, therefore
It has research and application value well.
Still there are many embodiment, all technologies formed using equivalents or equivalent transformation for the utility model
Scheme is all fallen within the protection scope of the utility model.
Claims (7)
1. a kind of High-precision Microwave power detecting system based on shunt effect, it is characterised in that：It is passed including substrate, co-planar waveguide
Defeated line, fine and close resistance（1）And sensor, the coplanar waveguide transmission line, fine and close resistance（1）Substrate is all set in sensor
On, the coplanar waveguide transmission line includes the first co-planar waveguide center signal line（10）, the second co-planar waveguide center signal line
（20）And ground wire（30）, the ground wire（30）It is arranged in the first co-planar waveguide center signal line（10）With the second co-planar waveguide center
Signal wire（20）Two sides.
2. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 1, it is characterised in that：
The material of the substrate is GaAs.
3. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 1, it is characterised in that：
The sensor is Thermoelectric Microwave Power Sensor, and the Thermoelectric Microwave Power Sensor includes thermoelectric pile（2）With two
First terminal resistance in parallel（3）With second terminal resistance（4）, first terminal resistance（3）With second terminal resistance（4）Parallel connection is set
It sets in the second co-planar waveguide center signal line（20）Two sides, the both ends of the first terminal resistance have been electrically connected second
Co-planar waveguide center signal line（20）And ground wire（30）, it is coplanar that the both ends of the second terminal resistance have been electrically connected second
Waveguide core signal wire（20）And ground wire（30）, the thermoelectric pile（2）With first terminal resistance（3）With second terminal resistance（4）
Gap setting, and thermoelectric pile is arranged in first terminal resistance（3）With second terminal resistance（4）Right side, thermoelectric pile have cold end
And hot end, cold end is provided with voltage output end（5）.
4. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 1, it is characterised in that：
The densification resistance（1）It is arranged in the first co-planar waveguide center signal line（10）With the second co-planar waveguide center signal line（20）'s
It is intermediate.
5. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 4, it is characterised in that：
The densification resistance（1）Using copper-manganese material as material.
6. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 1, it is characterised in that：
The densification resistance（1）Two sides be deposited with insulating layer silicon nitride（6）, in insulating layer silicon nitride（6）Outside be deposited with metal
As voltage tester port（7）.
7. a kind of High-precision Microwave power detecting system based on shunt effect according to claim 6, it is characterised in that：
The metal is aluminium.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108982963A (en) * | 2018-04-17 | 2018-12-11 | 南京邮电大学 | A kind of High-precision Microwave power detecting system based on shunt effect |
| CN110108930A (en) * | 2019-05-23 | 2019-08-09 | 深港产学研基地（北京大学香港科技大学深圳研修院） | Micro-nano microwave power detector and measurement method based on suspension low dimensional material |
| CN114813846A (en) * | 2022-04-14 | 2022-07-29 | 南京高华科技股份有限公司 | Humidity sensor |
-
2018
- 2018-04-17 CN CN201820541952.8U patent/CN208172092U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108982963A (en) * | 2018-04-17 | 2018-12-11 | 南京邮电大学 | A kind of High-precision Microwave power detecting system based on shunt effect |
| CN108982963B (en) * | 2018-04-17 | 2023-07-07 | 南京邮电大学 | High-precision microwave power detection system based on shunt effect |
| CN110108930A (en) * | 2019-05-23 | 2019-08-09 | 深港产学研基地（北京大学香港科技大学深圳研修院） | Micro-nano microwave power detector and measurement method based on suspension low dimensional material |
| CN114813846A (en) * | 2022-04-14 | 2022-07-29 | 南京高华科技股份有限公司 | Humidity sensor |
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Effective date of registration: 20191202 Address after: Room 107, floor 1, No. 30-06, GuangYue Road, Qixia street, Nanjing Economic and Technological Development Zone, Nanjing, Jiangsu Province Patentee after: Nanjing Erxin Electronic Co.,Ltd. Address before: 210003 Gulou District, Jiangsu, Nanjing new model road, No. 66 Patentee before: NANJING University OF POSTS AND TELECOMMUNICATIONS |
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