CN108594006A - Microwave power detector based on Hall effect - Google Patents
Microwave power detector based on Hall effect Download PDFInfo
- Publication number
- CN108594006A CN108594006A CN201810262667.7A CN201810262667A CN108594006A CN 108594006 A CN108594006 A CN 108594006A CN 201810262667 A CN201810262667 A CN 201810262667A CN 108594006 A CN108594006 A CN 108594006A
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- CN
- China
- Prior art keywords
- microwave power
- transmission line
- hall effect
- coplanar waveguide
- waveguide transmission
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/08—Arrangements for measuring electric power or power factor by using galvanomagnetic-effect devices, e.g. Hall-effect devices
Abstract
The invention discloses a kind of microwave power detectors based on Hall effect, it is made of gallium arsenide substrate, coplanar waveguide transmission line and inductive circuit, coplanar waveguide transmission line is arranged in gallium arsenide substrate, coplanar waveguide transmission line is made of center signal line and ground wire, inductive circuit, which is located at right over coplanar waveguide transmission line, to be made of with underface, inductive circuit controlled driving circuit and inductance；The microwave signal of the present invention is not almost lost when being detected by microwave power detector based on Hall effect, it can be achieved that on-line measurement, microwave power detector structure novel and has high sensitivity.
Description
Technical field
The present invention relates to technical field of microelectronic mechanical systems, and in particular to a kind of microwave power biography based on Hall effect
Sensor.
Background technology
In microelectromechanical systems（MEMS）Microwave study in, microwave power be characterize microwave signal an important ginseng
Number.In the generation of microwave signal, transmission and receiving the research of links, the detection of microwave power is essential.Most
Common microwave power detector is terminal power sensor based on heat to electricity conversion principle and based on the electricity of fixed beam structure
Hold type micro-wave power sensor.In recent years, with the continuous research of Hall effect so that Hall effect is applied to microwave power
Detection is possibly realized.
Invention content
It is an object of the invention to overcome above-mentioned limitation, a kind of microwave power detector based on Hall effect is provided.It should
System measures the power of microwave signal using the Hall voltage that Hall effect generates, and the amplitude range of measuring signal is big, precision
It is high, small, and convenient for integrated.
The purpose of the present invention is achieved through the following technical solutions：A kind of microwave power detector based on Hall effect,
It is made of gallium arsenide substrate, coplanar waveguide transmission line and inductive circuit, coplanar waveguide transmission line is arranged in gallium arsenide substrate, altogether
Coplanar waveguide transmission line is made of center signal line and ground wire, and inductive circuit is located at right over coplanar waveguide transmission line and underface,
Inductive circuit is made of controlled driving circuit and inductance.
Preferably, the centrally disposed signal wire both sides of ground wire, center signal line both sides are coated with insulator silica, and two
The both sides of silica are coated with metal as voltage tester electrode.
Preferably, the PoP stacked package techniques that sensor integrally uses, sensor are encapsulated in middle layer, two inductance
Circuit is individually enclosed in top layer and lowest level, is located at the surface and underface of sensor, and insulating layer silica is located at electricity
Between inductive circuit and sensor.
In conclusion the present invention has the following advantages：Electric current is generated when 1, being transmitted on signal wire when microwave signal, to it
Add vertical magnetic field, generate Hall voltage, measure its voltage, and can be found out according to the proportionate relationship between voltage and power to be measured
Microwave power, this process do not consume microwave signal substantially, realize on-line measurement, integrated convenient for the on piece with other microwave systems
（On-chip Integration）.2, microwave power detector utilizes Hall effect, can increase its measurement range, current measurement
Up to 50KA；Working band is wide, especially in high frequency its precision up to 0.5%.In addition, its dynamic of the sensor based on Hall effect
It has excellent performance, corresponding time constant is smaller.3, inductive circuit uses rectangular archimedes line, ensure that central magnetic field is uniform
, and increase controlled driving circuit and transfer the files, thus it is possible to vary the size in magnetic field.
In addition, the present invention is to be based on MEMS technology, the principal advantages with MEMS are such as small, light-weight, low in energy consumption
Deng.And and monolithic integrated microwave circuit（MMIC）Technique is completely compatible, and convenient for integrated, this series of advantages is traditional microwave work(
Rate detector is incomparable, therefore it has research and application value well.
Description of the drawings
Fig. 1 is the primary structure schematic diagram of the present invention；
Fig. 2 is the inductive circuit schematic diagram of the present invention；
Fig. 3 is the overall package systematic vertical schematic diagram of the present invention；
Figure label：1- center signals line, 2- ground wires, 3- silica, 4- voltage testers electrode, the controlled driving circuits of 5-, 6-
Inductance.
Specific implementation mode
In order to deepen the understanding of the present invention, below in conjunction with embodiment and attached drawing, the invention will be further described, should
Embodiment is only used for explaining the present invention, is not intended to limit the scope of the present invention..
As shown in Figure 1, 2, it the invention discloses a kind of microwave power detector based on Hall effect, is served as a contrast by GaAs
Bottom, coplanar waveguide transmission line and inductive circuit composition, coplanar waveguide transmission line are made of center signal line 1 and ground wire 2, inductance electricity
Road, which is located at right over coplanar waveguide transmission line, to be made of with underface, inductive circuit controlled driving circuit 5 and inductance 6, and microwave is worked as
Signal will produce the electric current proportional with power when being transmitted on CPW on center signal line 1.By adjusting controlled driving
Circuit can be generated perpendicular to the magnetic field of microwave current, according to Hall effect, will produce Hall voltage.In order to accurately test out its two
Terminal voltage, and in order to avoid microwave signal propagation loss occurs from test lead, insulator two is coated in 1 both sides of center signal line
Silica 3, and metal is being plated in the other side of silica 3, as voltage tester electrode 4.At this point, the electrode plate on both sides is in
Heart signal wire 1 is respectively formed two capacitances, and silica 3 is then its dielectric.Since voltage value and performance number correspond, because
This, by measuring the voltage on the electrode plate of both sides, you can obtain the power of microwave.
Using PoP stacked package techniques, encapsulating structure is as shown in figure 3, respectively by inductive circuit and microwave power detector
It is packaged, the inductive circuit after two encapsulation is placed on the upper and lower of microwave power detector.Inductive circuit and microwave power
Silica 3 is filled between sensor is used as electrically isolating layer.
Claims (3)
1. a kind of microwave power detector based on Hall effect, it is characterised in that：By gallium arsenide substrate, coplanar waveguide transmission line
It is formed with inductive circuit, the coplanar waveguide transmission line is arranged in gallium arsenide substrate, and the coplanar waveguide transmission line is by center
Signal wire（1）And ground wire（2）Composition, the inductive circuit is located at right over coplanar waveguide transmission line and underface, the inductance
Circuit is by controlled driving circuit（5）And inductance（6）Composition.
2. the microwave power detector according to claim 1 based on Hall effect, it is characterised in that：The ground wire（2）
Centrally disposed signal wire（1）Both sides, the center signal line（1）Both sides are coated with insulator silica（3）, the titanium dioxide
Silicon（3）Both sides be coated with metal as voltage tester electrode（4）.
3. the microwave power detector according to claim 2 based on Hall effect, it is characterised in that：Sensor is integrally adopted
PoP stacked package techniques, sensor are encapsulated in middle layer, and two inductive circuits are individually enclosed in top layer and lowest level,
Positioned at the surface and underface of sensor, insulating layer silica is between inductive circuit and sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810262667.7A CN108594006A (en) | 2018-03-28 | 2018-03-28 | Microwave power detector based on Hall effect |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810262667.7A CN108594006A (en) | 2018-03-28 | 2018-03-28 | Microwave power detector based on Hall effect |
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| Publication Number | Publication Date |
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| CN108594006A true CN108594006A (en) | 2018-09-28 |
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| CN201810262667.7A Pending CN108594006A (en) | 2018-03-28 | 2018-03-28 | Microwave power detector based on Hall effect |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115097199A (en) * | 2022-07-22 | 2022-09-23 | 核工业西南物理研究院 | Coaxial absorption type microwave power detector and system based on Hall effect |
| CN115128341A (en) * | 2022-07-22 | 2022-09-30 | 核工业西南物理研究院 | Micro-strip microwave power detector based on Hall effect |
| CN115184668A (en) * | 2022-07-22 | 2022-10-14 | 核工业西南物理研究院 | Microwave power measurement method and system based on Hall effect |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB778446A (en) * | 1952-09-23 | 1957-07-10 | Harold Everard Monteagle Barlo | Improvements relating to the measurement of power flow or energy transmitted in an electromagnetic field |
| SU885909A1 (en) * | 1980-01-03 | 1981-11-30 | Ордена Трудового Красного Знамени Институт Физики Полупроводников Ан Литсср | Uhf power flow density measuring method |
| SU1062617A1 (en) * | 1982-03-02 | 1983-12-23 | Куйбышевское производственное объединение "Завод им.Масленникова" | Uhf power pickup |
| CN1925074A (en) * | 2005-08-29 | 2007-03-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Induction coupling coil and induction coupling plasma device |
| RU2311649C1 (en) * | 2006-05-15 | 2007-11-27 | ООО "С и Ц-Сенсор" | Wave duct measuring adjustable head with hall sensor |
| CN102097564A (en) * | 2010-11-26 | 2011-06-15 | 华中科技大学 | Quantum dot molecular light emitting device |
| CN102789884A (en) * | 2012-06-21 | 2012-11-21 | 西安交通大学 | Preparation method of solenoid micro-inductor inside quartz material |
| CN102914749A (en) * | 2012-11-19 | 2013-02-06 | 中国科学院上海微系统与信息技术研究所 | Micromechanical magnetic field sensor and application thereof |
| CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
| CN105974614A (en) * | 2016-06-30 | 2016-09-28 | 派尼尔科技（天津）有限公司 | Mach-Zehnder optical modulator chip structure adopting ridge waveguide and preparation process thereof |
| CN105988090A (en) * | 2015-01-30 | 2016-10-05 | 中国科学院上海微系统与信息技术研究所 | Micro-machine magnetic field senor and application thereof |
| CN107290059A (en) * | 2015-09-25 | 2017-10-24 | 苏州大学 | The preparation method of sub-wavelength circularly polarized light analyzer containing spiral of Archimedes |
-
2018
- 2018-03-28 CN CN201810262667.7A patent/CN108594006A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB778446A (en) * | 1952-09-23 | 1957-07-10 | Harold Everard Monteagle Barlo | Improvements relating to the measurement of power flow or energy transmitted in an electromagnetic field |
| SU885909A1 (en) * | 1980-01-03 | 1981-11-30 | Ордена Трудового Красного Знамени Институт Физики Полупроводников Ан Литсср | Uhf power flow density measuring method |
| SU1062617A1 (en) * | 1982-03-02 | 1983-12-23 | Куйбышевское производственное объединение "Завод им.Масленникова" | Uhf power pickup |
| CN1925074A (en) * | 2005-08-29 | 2007-03-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Induction coupling coil and induction coupling plasma device |
| RU2311649C1 (en) * | 2006-05-15 | 2007-11-27 | ООО "С и Ц-Сенсор" | Wave duct measuring adjustable head with hall sensor |
| CN102097564A (en) * | 2010-11-26 | 2011-06-15 | 华中科技大学 | Quantum dot molecular light emitting device |
| CN102789884A (en) * | 2012-06-21 | 2012-11-21 | 西安交通大学 | Preparation method of solenoid micro-inductor inside quartz material |
| CN102914749A (en) * | 2012-11-19 | 2013-02-06 | 中国科学院上海微系统与信息技术研究所 | Micromechanical magnetic field sensor and application thereof |
| CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
| CN105988090A (en) * | 2015-01-30 | 2016-10-05 | 中国科学院上海微系统与信息技术研究所 | Micro-machine magnetic field senor and application thereof |
| CN107290059A (en) * | 2015-09-25 | 2017-10-24 | 苏州大学 | The preparation method of sub-wavelength circularly polarized light analyzer containing spiral of Archimedes |
| CN105974614A (en) * | 2016-06-30 | 2016-09-28 | 派尼尔科技（天津）有限公司 | Mach-Zehnder optical modulator chip structure adopting ridge waveguide and preparation process thereof |
Non-Patent Citations (2)
| Title |
|---|
| 田涛;廖小平;: "MEMS微波功率传感器的共面波导优化设计", 电子器件, no. 05, pages 2 - 3 * |
| 陈宁娟;廖小平;: "GaAs MEMS微波功率传感器的设计与模拟", 电子器件, no. 01 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115097199A (en) * | 2022-07-22 | 2022-09-23 | 核工业西南物理研究院 | Coaxial absorption type microwave power detector and system based on Hall effect |
| CN115128341A (en) * | 2022-07-22 | 2022-09-30 | 核工业西南物理研究院 | Micro-strip microwave power detector based on Hall effect |
| CN115184668A (en) * | 2022-07-22 | 2022-10-14 | 核工业西南物理研究院 | Microwave power measurement method and system based on Hall effect |
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