CN206876312U - Mems pressure sensor - Google Patents
Mems pressure sensor Download PDFInfo
- Publication number
- CN206876312U CN206876312U CN201720660348.2U CN201720660348U CN206876312U CN 206876312 U CN206876312 U CN 206876312U CN 201720660348 U CN201720660348 U CN 201720660348U CN 206876312 U CN206876312 U CN 206876312U
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- CN
- China
- Prior art keywords
- pressure sensor
- film
- mems pressure
- substrate
- dielectric layer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
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Abstract
It the utility model is related to MEMS technology field, there is provided a kind of MEMS pressure sensor.The MEMS pressure sensor includes substrate, and the cavity of up/down perforation is provided with the middle part of the substrate；Film, above the substrate and the covering cavity；Dielectric layer, above the film, the dielectric layer is provided with inductance coil；Fixed capacity, it is connected with the inductance coil.MEMS pressure sensor provided by the utility model, simple in construction, high sensitivity, and the inductance value calculation of inductance coil is accurate, method of testing is simple, and pressure signal can be converted to electric signal, realizes accurately pressure measxurement.
Description
Technical field
The utility model belongs to MEMS technology field, is to be related to a kind of MEMS pressure sensor more specifically.
Background technology
MEMS (Micro-Electro-Mechanical System, MEMS), is in semiconductor fabrication base
Grow up on plinth, merged the technology systems such as photoetching, burn into film, silicon micromachined, non-silicon micromachined and precision optical machinery processing
The high-tech electronic mechanical devices of work.In the product realized using silicon micromachining technology, pressure sensor is that development is earliest
It is a kind of.Traditional pressure sensor has pressure resistance type, condenser type, inductance type etc..Wherein inductance pressure transducer has performance steady
Fixed, reproducible, the features such as linear characteristic is good, is widely used.But current inductance pressure transducer often sensitivity compared with
It is low, and inductance variable quantity is not easy to calculate, these aspects still need to further improve.
Utility model content
The purpose of this utility model is to provide a kind of MEMS pressure sensor, it is intended to solves current inductance type pressure sensing
Device sensitivity is relatively low and the problem of inductance variable quantity is not easy to calculate.
To achieve the above object, the technical solution adopted in the utility model is：A kind of MEMS pressure sensor is provided, wrapped
Include：
Substrate, the substrate middle part are provided with the cavity of up/down perforation；
Film, above the substrate and the covering cavity；
Dielectric layer, above the film, the dielectric layer is provided with inductance coil；
Fixed capacity, it is connected with the inductance coil.
Further, on the thickness direction of the pressure sensor, region corresponding to the dielectric layer includes and is more than
Region corresponding to the film, and the dielectric layer extends the part of the film and is connected with the fixed capacity.
Further, the fixed capacity includes top crown and bottom crown, and the top crown and the bottom crown are set respectively
Above and below the part that the dielectric layer extends the film.
Further, the bottom crown bottom surface is generally aligned in the same plane with the substrate floor.
Further, the material of the bottom crown is silicon.
Further, the inductance coil is plane inductive coil.
Further, the thickness range of the film is 10 microns to 20 microns.
Further, in addition to substrate, the substrate are located at below the substrate.
The beneficial effect for the MEMS pressure sensor that the utility model embodiment provides is：Film, which is under pressure, occurs shape
Become, cause the inductance value of the inductance coil above film to change, forming LC by fixed capacity and inductance coil returns
Drive test measures out the inductance value of inductance coil, so as to obtain corresponding pressure value.The MEMS pressure sensor is simple in construction, sensitive
Degree is high, and the inductance value calculation of inductance coil is accurate, and measuring method is simple, and pressure signal can be converted to electric signal, realizes
Accurately pressure measxurement.
Brief description of the drawings
Fig. 1 is the schematic cross-sectional view for the MEMS pressure sensor that the utility model embodiment provides；
Fig. 2 is the schematic top plan view of the inductance coil for the MEMS pressure sensor that the utility model embodiment provides；
Fig. 3 is the MEMS pressure sensor schematic cross-sectional view that another embodiment of the utility model provides.
In figure：100th, substrate；200th, film；300th, dielectric layer；400th, inductance coil；500th, fixed capacity；501st, upper pole
Plate；502nd, bottom crown；600th, substrate.
Embodiment
In order that technical problem to be solved in the utility model, technical scheme and beneficial effect are more clearly understood, with
Lower combination drawings and Examples, the utility model is further elaborated.It is it should be appreciated that described herein specific real
Example is applied only to explain the utility model, is not used to limit the utility model.
Referring to Fig. 1, the existing MEMS pressure sensor provided the utility model embodiment illustrates.A kind of MEMS pressures
Force snesor, including substrate 100, film 200, dielectric layer 300 and fixed capacity 500.The middle part of substrate 100 is provided with up/down perforation
Cavity.Film 200 is located at the top of substrate 100 and covering cavity.Dielectric layer 300 is located at the top of film 200.Set on dielectric layer 300
There is inductance coil 400.Fixed capacity 500 is connected with inductance coil 400.
In the present embodiment, substrate 100 and film 200 form semi-enclosed cavity, and film 200 is under pressure can be to
Lower recess；The deformation of film 200 causes the dielectric layer 300 of the top of film 200 and inductance coil 400 to deform upon；Inductance coil
The inductance value of inductance coil 400 changes after 400 deformation.Therefore, suffered by the inductance value of inductance coil 400 and film 200
Pressure value be in one-to-one relationship, the inductance value by measuring inductance coil 400 can be derived that the pressure suffered by film 200
Value.
Fixed capacity 500 refers to the electric capacity that capacitance is fixed value.Fixed capacity 500 is connected to form with inductance coil 400
LC resonance circuits.Behind inductance coil 400, fixed capacity 500 and the source-series formation loop of AC signal output, it is humorous LC can be formed
Shake circuit.The resonant frequency of LC resonance circuits is drawn by measurement, according to the resonant frequency of LC resonance circuits and the electric capacity of electric capacity
Value can try to achieve the inductance value of inductance coil 400, and then draw the pressure value suffered by film 200, realize the measurement to pressure.
The beneficial effect of MEMS pressure sensor that the utility model embodiment provides is, film 200 is under pressure hair
Raw deformation, cause the inductance value of the inductance coil 400 positioned at the top of film 200 to change, pass through fixed capacity 500 and inductance
Coil 400 forms the inductance value that LC loop measurements draw inductance coil 400, so as to obtain corresponding pressure value.The MEMS pressure
Sensor construction is simple, high sensitivity, and the inductance value calculation of inductance coil 400 is accurate, and measuring method is simple, can be by pressure
Signal is converted to electric signal, realizes accurately pressure measxurement.
Further, referring to Fig. 1, a kind of specific embodiment party as MEMS pressure sensor provided by the utility model
Formula, on the thickness direction of pressure sensor, region corresponding to dielectric layer 300 includes and is more than region corresponding to film 200.It is situated between
The part that matter layer 300 extends film 200 is connected with fixed capacity 500.In the present embodiment, dielectric layer 300 is located at film
200 tops.Dielectric layer 300 can cover all film 200, and extend a part.Preferably, dielectric layer 300 and film
200 are overlapped in the direction of the width, and one end is alignd in the longitudinal direction, and other end dielectric layer 300 extends one relative to film 200
Part.Fixed capacity 500 extends the part of film 200 located at dielectric layer 300, can avoid because of the position shadow of fixed capacity 500
Ring the situation of the deformation of film 200.Preferably, the material of dielectric layer 300 can select the insulating materials such as silicon nitride or silica.
Further, referring to Fig. 1, a kind of specific embodiment party as MEMS pressure sensor provided by the utility model
Formula, fixed capacity 500 include top crown 501 and bottom crown 502.Top crown 501 and bottom crown 502 are respectively arranged on dielectric layer 300
Above and below the part for extending the film 200.In the present embodiment, dielectric layer 300 is located at the upper of fixed capacity 500
Between pole plate 501 and bottom crown 502, the medium of fixed capacity 500 is served as, makes the capacitance of fixed capacity 500 by external condition
Influence smaller, capacitance is more constant, and then makes the inductance value obtained according to capacitance and resonant frequency more accurate, improves
The degree of accuracy of MEMS pressure sensor.
Further, refering to Fig. 1, a kind of specific embodiment party as MEMS pressure sensor provided by the utility model
Formula, the bottom surface of bottom crown 502 are generally aligned in the same plane with the bottom surface of substrate 100.Thereby, it is possible to the MEMS pressure sensor is fixed more
It is firm, avoid the pressure measurement errors caused by MEMS pressure sensor fixation problem.
Further, referring to Fig. 1, a kind of specific embodiment party as MEMS pressure sensor provided by the utility model
Formula, the material of bottom crown 502 is silicon.
Further, referring to Fig. 2, a kind of specific embodiment party as MEMS pressure sensor provided by the utility model
Formula, inductance coil 400 are plane inductive coil 400.In the present embodiment, the wire of plane inductive coil 400 can be in more
The individual U-shaped shape being arranged in order, or the shape that a circle circle spirals from inside to outside.The deformation journey of plane inductive coil 400
The inductance value of degree and plane inductive coil 400 corresponds.
Further, a kind of embodiment as MEMS pressure sensor provided by the utility model is described thin
The thickness range of film 200 is 10 microns to 20 microns.If film 200 is too thick, film 200 is easily damaged by larger pressure
It is bad；If film 200 is too thick, film 200 after being under pressure caused deformation it is too small, so as to influence MEMS pressure sensor
Sensitivity.Film 200 of thickness can make film 200 in higher sensitivity while reduce the feelings of the damage of film 200 in the range of this
Condition.
Referring to Fig. 3, a kind of embodiment as MEMS pressure sensor provided by the utility model, the MEMS
Pressure sensor also includes substrate 600.Substrate 600 is located at the lower section of substrate 100.Substrate 600 can be located at substrate 100 and fixed electricity
Hold the lower section of 500 bottom crown 502.Thus make the connection between film 200, inductance coil 400 and fixed capacity 500 more steady
Gu.Substrate 600 plays a protective role to the cavity and film 200 of MEMS pressure sensor, and can strengthen MEMS pressure biography
The steadiness of sensor, improve accuracy of measurement.
The beneficial effect of MEMS pressure sensor that the utility model embodiment provides is, film 200 is under pressure hair
Raw deformation, cause the inductance value of the inductance coil 400 positioned at the top of film 200 to change, pass through fixed capacity 500 and inductance
Coil 400 forms the inductance value that LC loop measurements draw inductance coil 400, so as to obtain corresponding pressure value.The MEMS pressure
Sensor construction is simple, high sensitivity, and the inductance value calculation of inductance coil 400 is accurate, and measuring method is simple, can be by pressure
Signal is converted to electric signal, realizes accurately pressure measxurement.
Preferred embodiment of the present utility model is the foregoing is only, it is all at this not to limit the utility model
All any modification, equivalent and improvement made within the spirit and principle of utility model etc., should be included in the utility model
Protection domain within.
Claims (8)
- A kind of 1. MEMS pressure sensor, it is characterised in that including：Substrate, the substrate middle part are provided with the cavity of up/down perforation；Film, above the substrate and the covering cavity；Dielectric layer, above the film, the dielectric layer is provided with inductance coil；Fixed capacity, it is connected with the inductance coil.
- 2. MEMS pressure sensor as claimed in claim 1, it is characterised in that in the thickness side of the MEMS pressure sensor Upwards, region corresponding to the dielectric layer includes and is more than region corresponding to the film, and the dielectric layer extend it is described The part of film is connected with the fixed capacity.
- 3. MEMS pressure sensor as claimed in claim 2, it is characterised in that the fixed capacity includes top crown and lower pole Plate, the top crown and the bottom crown are respectively arranged on the dielectric layer and extended above and below the part of the film.
- 4. MEMS pressure sensor as claimed in claim 3, it is characterised in that the bottom crown bottom surface and the substrate floor It is generally aligned in the same plane.
- 5. MEMS pressure sensor as claimed in claim 3, it is characterised in that the material of the bottom crown is silicon.
- 6. MEMS pressure sensor as claimed in claim 1, it is characterised in that the inductance coil is plane inductive coil.
- 7. MEMS pressure sensor as claimed in claim 1, it is characterised in that the thickness range of the film be 10 microns extremely 20 microns.
- 8. the MEMS pressure sensor as described in claim any one of 1-7, it is characterised in that also including substrate, the substrate Below the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720660348.2U CN206876312U (en) | 2017-06-07 | 2017-06-07 | Mems pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720660348.2U CN206876312U (en) | 2017-06-07 | 2017-06-07 | Mems pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206876312U true CN206876312U (en) | 2018-01-12 |
Family
ID=61338465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720660348.2U Withdrawn - After Issue CN206876312U (en) | 2017-06-07 | 2017-06-07 | Mems pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206876312U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107144378A (en) * | 2017-06-07 | 2017-09-08 | 深圳信息职业技术学院 | Mems pressure sensor |
| CN112284573A (en) * | 2020-09-30 | 2021-01-29 | 深圳信息职业技术学院 | Pressure sensor with heat dissipation function |
-
2017
- 2017-06-07 CN CN201720660348.2U patent/CN206876312U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107144378A (en) * | 2017-06-07 | 2017-09-08 | 深圳信息职业技术学院 | Mems pressure sensor |
| CN112284573A (en) * | 2020-09-30 | 2021-01-29 | 深圳信息职业技术学院 | Pressure sensor with heat dissipation function |
| CN112284573B (en) * | 2020-09-30 | 2022-01-14 | 深圳信息职业技术学院 | Pressure sensor with heat dissipation function |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20180112 Effective date of abandoning: 20230505 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20180112 Effective date of abandoning: 20230505 |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |