CN100510759C - Wireless receiving microelectronic mechanical microwave power sensor and manufacturing method therefor - Google Patents
Wireless receiving microelectronic mechanical microwave power sensor and manufacturing method therefor Download PDFInfo
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- CN100510759C CN100510759C CNB2007100211341A CN200710021134A CN100510759C CN 100510759 C CN100510759 C CN 100510759C CN B2007100211341 A CNB2007100211341 A CN B2007100211341A CN 200710021134 A CN200710021134 A CN 200710021134A CN 100510759 C CN100510759 C CN 100510759C
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Abstract
This invention relates to a wireless receiving type, microelectron mechanical, and microwave power level sensor and its preparation method. The invention uses coplane radiating guide (1) to take over microwave power to create resistance heating, through thermocouple to measure microwave signal amplitude. This sensor forms coplane radiating guide on gaas substrate (8). coplane radiating guide then connect with coplane waveguide transmission line(4) to transmit microwave signal. The terminal of coplane waveguide transmission line(4) has two parallel resistance as microwave load resistance(5). Load resistance through heating creates its right side thermopile (7) to heat. Thermopile (7) owing to exothermic disproportionation cause cold and hot point, form temperature variation. This temperature difference owing to seebeck effect creates constant voltage at two output port of thermopile and ouput by two pressure welding piece (6). The ratio between this output thermo voltage and input microwave efficiency is direct ratio, so measuring this volatge could obtain numerical value of microwave power.
Description
Technical field
The present invention utilizes the co-planar waveguide antenna with parasitic element paster and U type groove to receive microwave power, microwave power is transferred to terminal resistance by co-planar waveguide, use the thermal value of thermal reactor measuring resistance and be converted to thermoelectrical potential output, thereby realize the measurement of microwave power, belong to the microelectromechanical systems field.
Background technology
In microwave study, microwave power is an important parameter that characterizes the microwave signal feature.In microwave wireless application and measuring technique, the detection of microwave power is a very important part.Traditional power meter adopts the power sensor of waveguide form, and as thermopair, microwave transmission lines such as employing concentric cable can not be realized the direct reception of microwave power as the input coupling arrangement of microwave signal with bismuth-antimony.
Over nearly more than 20 years, develop rapidly along with microelectron-mechanical (MEMS) technology, terminal heated microwave power sensor based on this technology has abroad been proposed, principle is to utilize terminal resistance to absorb input microwave power to be measured and generate heat, and survey the size that near the terminal resistance the temperature difference obtains microwave power by being placed near the microwave terminal resistance thermopair, such microwave power detector has simple in structure, volume is little, performance is comparatively good, with silicon (Si) technology or gallium arsenide (GaAs) technology advantage such as compatibility mutually, the present invention is the sensor based on this principle of work.
Summary of the invention
Technical matters: the purpose of this invention is to provide a kind of brand-new, can directly receive wireless receiving microelectronic mechanical microwave power detector of extraneous microwave signal and preparation method thereof, utilize the co-planar waveguide antenna structure of sensor front end, improve the dirigibility of microwave power measurement greatly.
Technical scheme: wireless receiving microelectronic mechanical microwave power detector of the present invention, with the gallium arsenide is substrate, the layer of aluminum gallium arsenic film is arranged on gallium arsenide substrate, one deck co-planar waveguide antenna is arranged on the gallium aluminium arsenic film, one section U type groove that is etched away is arranged on the antenna, a parasitic element paster is respectively arranged on the antenna both sides, the co-planar waveguide antenna end is connected with coplanar waveguide transmission line, in the coplanar waveguide transmission line terminal two load in parallel resistance are arranged, correspondence is provided with thermoelectric pile in the outside of pull-up resistor, and the two ends of thermoelectric pile are connected with two press welding blocks by lead.
The preparation method of this sensor is:
A) prepare gallium arsenide substrate, use unadulterated semi-insulating GaAs, thickness is 500 μ m,
B) epitaxial growth gallium aluminium arsenic film, from stopping layer, thickness is 1000 as corrosion
,
C) epitaxial growth n p type gallium arensidep, growth scope are the thermoelectric pile part, and thickness is 0.25 μ m,
D) sputter gold germanium nickel/gold, sputter scope are the thermoelectric pile part, and the thickness of gold germanium nickel/gold is 300/1800
,
E) deposit and photoetching tantalum nitride form resistance, and deposit and photoetching scope are the pull-up resistor part, and thickness is 2 μ m,
F) sputter and photoetching titanium/gold/titanium, sputter scope are co-planar waveguide antenna part, parasitic element paster part and coplanar waveguide transmission line part, and thickness is 500/1500/300
,
G) electrogilding, sputter scope are co-planar waveguide antenna part, parasitic element paster (2) part and coplanar waveguide transmission line part, and thickness is 2 μ m,
H) attenuate substrate to 100 μ m,
I) back-etching is to algaas barrier layer.
Wireless receiving among the present invention wave power sensor that declines is substrate with the gallium arsenide, microwave signal to be measured is introduced with the co-planar waveguide antenna of front end, center section is finished being connected of co-planar waveguide antenna and transmission line with the asymptote structure, terminal at coplanar waveguide transmission line is connected to the pull-up resistor that is complementary with its characteristic impedance, make the microwave signal of input effectively be converted into heat, this heat raises an end (hot junction) temperature of the thermoelectric pile that is placed near the one group of series connection thermopair formation of terminal resistance, thereby form the temperature difference with the other end (cold junction), because Seebeck effect produces DC voltage output at two output terminals of thermoelectric pile, and this output voltage is directly proportional with the microwave power to be measured of input, thereby has realized the measurement of microwave power.
Distinguish whether to be the standard of this structure be:
This structure has used the co-planar waveguide antenna to receive microwave signal, has realized that by adopting parasitic patch and U type groove structure combining the microwave power of super bandwidth receives, and realizes the measurement of microwave power at last by thermocouple.
Satisfy above structure and be our designed structure.
Beneficial effect: compare with external, the domestic indirect heating type microwave power detector that has occurred, this novel wireless type microwave power detector structure has following significant advantage:
1, adopt front end co-planar waveguide receiving antenna formula structure can directly accept extraneous microwave power and needn't need pass through the measurement that switching device could be realized microwave power at the co-planar waveguide front end as traditional indirect heating type microwave power detector.
2, thereby the co-planar waveguide receiving antenna has adopted the new construction that adds parasitic patch and U type groove to widen the microwave measurement frequency band of sensor greatly;
3, realized the isotropic directivity measurement, promptly direction of measurement is not subjected to the restriction of position;
4, realize the impedance matching of front end antenna and coplanar waveguide structure by the asymptote formula coplanar waveguide structure of novelty, reduced return loss;
This a series of advantage is that the conventional power sensor that has occurred is incomparable, thereby this have overclocking band, omni-directional, low cost, high reliability and force very much wireless receiving with the dirigibility wave power sensor that declines to have extremely important using value and vast market prospect very.
Description of drawings
Fig. 1 is a wireless reception formula MEMS microwave power detector front plan view.
Fig. 2 is the cut-open view of the A-A face of wireless receiving formula MEMS microwave power detector.
Fig. 3 is a wireless receiving formula MEMS microwave power detector process chart.
Fig. 4 is the voltage output map of wireless receiving formula MEMS microwave power detector.
Comprise among the figure: co-planar waveguide antenna 1, parasitic element paster 2, U type groove 3, coplanar waveguide transmission line 4, terminal resistance 5, press welding block 6, thermopair 7, gallium arsenide substrate 8, gallium aluminium arsenic film 9.
Specific embodiments
This sensor is substrate 8 with the gallium arsenide, layer of aluminum gallium arsenic film 9 is arranged on gallium arsenide substrate 8, one deck co-planar waveguide antenna 1 is arranged on gallium aluminium arsenic film 9, one section U type groove 3 that is etched away is arranged on the antenna, a parasitic element paster 2 is respectively arranged on the antenna both sides, co-planar waveguide antenna 1 end is connected with coplanar waveguide transmission line 4, in coplanar waveguide transmission line 4 terminals two load in parallel resistance are arranged, correspondence is provided with thermoelectric pile 7 in the outside of pull-up resistor 5, and the two ends of thermoelectric pile 7 are connected with two press welding blocks 6 by lead.The present invention is that the special construction co-planar waveguide antenna by front end receives the microwave signal that comes from the outside, by co-planar waveguide microwave signal is passed to terminal then, the terminal of co-planar waveguide absorbs microwave signal fully with two build-out resistors and is converted into heat, this heat makes and is placed near one group of thermoelectric pile (hot junction) temperature rising of co-planar waveguide terminal resistance, thereby form the temperature difference with the other end (cold junction), this temperature difference is because Seebeck effect produces DC voltage output at two output terminals of thermoelectric pile, and this heat outputting voltage is directly proportional with the microwave power to be measured of input, thereby has realized the measurement of microwave power.For example: frequency is 10GHz, the GaAs substrate height of sensor is 100 μ m, co-planar waveguide center conduction band width is 100 μ m, slit width is 58 μ m, thermal reactor length is 500 μ m, and front end antenna length 1500 μ m adopt GaAs monolithic integrated microwave circuit (MMIC) technology and MEMS processing technology to combine and realize the structure of wireless receiving formula MEMS microwave power detector, the making that needs 7 times altogether microwave power detector is finished in photoetching, concrete processing step is summarized as follows:
(1) prepares substrate;
What substrate was selected for use is unadulterated semi-insulating GaAs substrate.
(2) epitaxial growth gallium aluminium arsenic film stops layer certainly as corrosion;
Epitaxial growth 1000
Thick AlGaAs stops layer certainly as corrosion.
(3) semi-insulatingization of algaas epitaxial layer;
(4) epitaxial growth gallium arsenide;
The thickness of epitaxial growth gallium arsenide is 0.25 μ m.
(5) the boron ion injects;
(6) the gallium arsenide epitaxial layer doping content is n=2.7 * 10
17Cm
-3
(7) semi-insulatingization of gallium arsenide epitaxial layer forms the semiconductor thermocouple arm;
(8) photoetching gold germanium nickel/gold;
(9) sputter gold germanium nickel/gold is peeled off, and forms metal thermocouple arm;
The thickness of gold germanium nickel/gold is 300/1800
(10) deposit tantalum nitride;
(11) photoetching and etching tantalum nitride form terminal resistance;
(12) deposit silicon nitride dielectric layer;
Growth 1000
The silicon nitride medium layer.
(13) photoetching and etch silicon nitride dielectric layer;
(14) sputtered titanium/gold/titanium;
Down payment titanium/gold/titanium=500/1500/300 that sputter is used to electroplate
(15) photoetching titanium/gold/titanium;
Keeping does not need to electroplate local photoresist.
(16) electrogilding; (forming co-planar waveguide and metal lead wire)
The thickness of electrogilding is 2 μ m,
(17) remove photoresist;
(18) anti-carve the gold layer, the corrosion bottom layer,
(19) substrate thinning to 100 μ m;
(20) back side photoetching and etching form gallium aluminium arsenic film;
1000
Thick algaas epitaxial layer from stopping layer, is used for forming gallium aluminium arsenic film as corrosion.
Claims (2)
1, a kind of wireless receiving microelectronic mechanical microwave power detector, it is characterized in that this sensor is substrate (8) with the gallium arsenide, layer of aluminum gallium arsenic film (9) is arranged on gallium arsenide substrate (8), one deck co-planar waveguide antenna (1) is arranged on gallium aluminium arsenic film (9), one section U type groove (3) that is etched away is arranged on the antenna, a parasitic element paster (2) is respectively arranged on the antenna both sides, microwave signal to be measured is introduced with the co-planar waveguide antenna of front end, center section is finished co-planar waveguide antenna (1) end with the asymptotic line structure and is connected with coplanar waveguide transmission line (4), two load in parallel resistance that are complementary with characteristic impedance are arranged in coplanar waveguide transmission line (4) terminal, outside correspondence at pull-up resistor (5) is provided with thermoelectric pile (7), and the two ends of thermoelectric pile (7) are connected with two press welding blocks (6) by lead.
2, a kind of preparation method of wireless receiving microelectronic mechanical microwave power detector as claimed in claim 1 is characterized in that the preparation method of this sensor is:
A) prepare gallium arsenide substrate (8), use unadulterated semi-insulating GaAs, thickness is 500 μ m,
B) epitaxial growth gallium aluminium arsenic film (9), from stopping layer, thickness is 1000 as corrosion
,
C) epitaxial growth n p type gallium arensidep, growth scope are thermoelectric pile (6) part, and thickness is 0.25 μ m,
D) sputter gold germanium nickel/gold, sputter scope are thermoelectric pile (6) part, and the thickness of gold germanium nickel/gold is 300/1800
,
E) deposit and photoetching tantalum nitride form resistance, and deposit and photoetching scope are pull-up resistor (6) part, and thickness is 2 μ m,
F) sputter and photoetching titanium/gold/titanium, sputter scope be co-planar waveguide antenna (1) partly, parasitic element paster (2) part and coplanar waveguide transmission line (4) part, thickness is 500/1500/300
,
G) electrogilding, sputter scope be co-planar waveguide antenna (1) partly, parasitic element paster (2) part and coplanar waveguide transmission line (4) part, thickness is 2 μ m,
H) attenuate substrate to 100 μ m,
I) back-etching is to algaas barrier layer.
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| CNB2007100211341A CN100510759C (en) | 2007-03-30 | 2007-03-30 | Wireless receiving microelectronic mechanical microwave power sensor and manufacturing method therefor |
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| CNB2007100211341A CN100510759C (en) | 2007-03-30 | 2007-03-30 | Wireless receiving microelectronic mechanical microwave power sensor and manufacturing method therefor |
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| CN100510759C true CN100510759C (en) | 2009-07-08 |
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Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102338825B (en) * | 2011-08-11 | 2013-08-07 | 东南大学 | 120-degree three-channel micro electro mechanical microwave power sensor and preparation method thereof |
| CN102385001B (en) * | 2011-08-11 | 2013-08-07 | 东南大学 | Three-channel micro-mechanical cantilever beam indirect-type microwave power sensor and preparation method |
| CN102645579B (en) * | 2011-08-11 | 2014-10-08 | 东南大学 | Four-input micro mechanical cantilever beam thermoelectric microwave power sensor and preparation method |
| CN102411088B (en) * | 2011-08-11 | 2013-08-07 | 东南大学 | Four-input micromechanical clamped beam thermoelectric microwave power sensor and preparation method thereof |
| CN102360039B (en) * | 2011-08-11 | 2013-08-07 | 东南大学 | Five-port micromachine cantilever-based capacitance type microwave power sensor and manufacturing method thereof |
| CN102393487B (en) * | 2011-08-11 | 2013-08-07 | 东南大学 | 72-degree five-port micro-electromechanical microwave power sensor and manufacturing method thereof |
| CN102323475B (en) * | 2011-08-11 | 2013-08-07 | 东南大学 | Three-channel micromechanical clamped beam indirect microwave power sensor and preparation method |
| CN102411087B (en) * | 2011-08-11 | 2013-09-25 | 东南大学 | 90-degree angle four-input micro electromechanical microwave power sensor and preparation method thereof |
| CN102401854B (en) * | 2011-11-17 | 2014-09-10 | 东南大学 | Micro-electromechanical heat conducting medium filling terminal type microwave power sensor and preparation method |
| CN103149424B (en) * | 2013-03-01 | 2015-05-06 | 东南大学 | Heat-shield type MEMS (Micro-Electromechanical System) microwave power sensor |
| CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
| CN110187169A (en) * | 2019-06-10 | 2019-08-30 | 东南大学 | A kind of microwave power detector and microwave power measurement method |
| CN110706874B (en) * | 2019-10-21 | 2021-06-01 | 中北大学 | Preparation method of high-reliability attenuation resistor |
| CN111239479B (en) * | 2020-01-19 | 2022-02-22 | 中国计量科学研究院 | Integrated self-calibration radiation power sensing chip and radiation power measuring method |
-
2007
- 2007-03-30 CN CNB2007100211341A patent/CN100510759C/en not_active Expired - Fee Related
Non-Patent Citations (4)
| Title |
|---|
| GaAs MEMS微波功率传感器的设计与模拟. 陈宁娟，廖小平.电子器件，第29卷第1期. 2006 |
| GaAs MEMS微波功率传感器的设计与模拟. 陈宁娟，廖小平.电子器件，第29卷第1期. 2006 * |
| 终端式MEMS微波功率传感器的结构模拟. 范小燕，廖小平.电子元件与材料，第25卷第4期. 2006 |
| 终端式MEMS微波功率传感器的结构模拟. 范小燕，廖小平.电子元件与材料，第25卷第4期. 2006 * |
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