CN202362361U - Microwave power sensor having terminal filled with heat-conducting medium and based on MEMS technique - Google Patents
Microwave power sensor having terminal filled with heat-conducting medium and based on MEMS technique Download PDFInfo
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- CN202362361U CN202362361U CN2011204563619U CN201120456361U CN202362361U CN 202362361 U CN202362361 U CN 202362361U CN 2011204563619 U CN2011204563619 U CN 2011204563619U CN 201120456361 U CN201120456361 U CN 201120456361U CN 202362361 U CN202362361 U CN 202362361U
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- heat
- microwave power
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- tantalum nitride
- conductive insulating
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Abstract
The microwave power sensor having a terminal filled with heat-conducting medium and based on MEMS technique is a microwave sensor simple in structure, simple in operation, small in size, simple in technique and convenient in integration. In the utility model, gallium arsenide is adopted as a substrate. A coplanar waveguide transmission line 1, a tantalum nitride (TaN) resistor 2, a heat-conducting insulating medium layer (BN) 3, a thermopile 4 and a pressure welding block 5 are designed on the substrate. The microwave power sensor inputs a microwave power signal through the coplanar waveguide transmission line. The tantalum nitride terminal resistor absorbs the microwave power and converts into heat. The heat-conducting insulating medium layer transmits the heat to the thermopile in a form of heat flux. And then DC voltage is generated through a thermoelectricity effect which is Seebeck of the thermopile, and is output from the pressure welding block. Therefore, the input microwave power can be detected.
Description
Technical field
The utility model provides microwave power detector, belong to the technical field of microelectromechanical systems based on microelectromechanical systems (MEMS) technology.
Background technology
Microwave power is to characterize one of most important parameter of microwave signal characteristic.The detection of microwave power all has very in the supervision of the I/O power level of the measurement of signal source output level and oscillator output power, microwave transmitter/receiver, gain control, circuit protection, traffic control etc. uses widely.Based on the Seebeck effect is the microwave power detector of thermoelectric transfer principle, has plurality of advantages such as quick response, high sensitivity, broadband and by broad research.Along with the develop rapidly of MEMS technology, MEMS technology and silicon (Si) technology or gallium arsenide (GaAs) technology compatibility have mutually been quickened the microwave power detector miniaturization, integrated and cost degradation.The utility model is based on thermoelectric principle, the microwave power detector compatible mutually with GaAs MMIC technology.
Summary of the invention
Technical matters:The purpose of the utility model provides a kind of microelectron-mechanical heat-conducting medium and fills the terminal type microwave power detector, utilizes the high heat conductivity of heat conductive insulating medium of filling, thereby improves the sensitivity characteristics of microwave power detector.
Technical scheme:It is substrate that the microelectron-mechanical heat-conducting medium of the utility model is filled terminal type microwave power detector employing gallium arsenide, on substrate, is designed with coplanar waveguide transmission line, terminal resistance, heat conductive insulating dielectric layer, film thermopile and press welding block:
This sensor is substrate with the gallium arsenide; On substrate, be provided with coplanar waveguide transmission line, tantalum nitride resistance, heat conductive insulating dielectric layer, thermoelectric pile, press welding block, wherein, coplanar waveguide transmission line has 3 and be positioned at the one side on the substrate; Between two coplanar waveguide transmission lines, be provided with tantalum nitride resistance; One side of heat conductive insulating dielectric layer is positioned at by the tantalum nitride resistance, and thermoelectric pile is positioned at the another side of heat conductive insulating dielectric layer, and press welding block is positioned at thermoelectricity
The outside of heap also is connected with thermoelectric pile, and the AlGaAs film is positioned at the below of tantalum nitride resistance, heat conductive insulating dielectric layer, thermoelectric pile.
As shown in Figure 1, microwave power detector is through co-planar waveguide line input microwave power signal, and terminal resistance absorbs microwave power and is converted into heat, passes through the heat conduction of heat conductive insulating dielectric layer then to thermoelectric pile, and thermoelectric pile produces DC voltage based on the Seebeck effect.
The heat conductive insulating medium adopts boron nitride (BN) material of insulation and high heat conductance.Heat-conducting medium is small to the influence of co-planar waveguide line and thermoelectric pile because of its high-insulativity.
The preparation method that the microelectron-mechanical heat-conducting medium is filled the terminal type microwave power detector is:
The preparation method that the utility model microelectron-mechanical heat-conducting medium is filled the terminal type microwave power detector is:
1) substrate: selecting for use not, the Doped GaAs substrate thickness is 500 μ m;
2) thermoelectric pile: epitaxial growth one deck AlGaAs film is as the etch stop layer on the GaAs substrate; Thick 2500 films of epitaxial growth one deck n+ GaAs are as a thermopair arm wherein on the AlGaAs film; Adopt lift-off technology; Thick 500/2200 film of sputter layer of Au GeNi/Au is as another arm of thermopair, and wherein AuGeNi is used for forming Ohmic contact with GaAs;
3) tantalum nitride resistance: at substrate surface deposit one deck TaN film, then through mask, exposure, lift-off technology stays the TaN resistance film of graphics field, and resistance is 25 Ω/;
4) heat conductive insulating dielectric layer: between tantalum nitride resistance and thermoelectric pile hot junction, through lift-off technology deposit one deck heat conductive insulating dielectric layer;
5) coplanar waveguide transmission line: the seed crystal of sputter one deck 500/1500/300 Ti/Au/Ti on the GaAs substrate is used to strengthen the adhesiveness of Au and substrate; Remove the Ti layer then, electroplate the thick 2 μ m films of layer of Au as the CPW transmission line;
6) thinning back side: substrate thinning is etched to AlGaAs from stopping layer.
Beneficial effect:Compare with existing microwave power detector, the microwave power detector of this novel technology based on MEMS has following significant advantage:
1, heat conductive insulating dielectric layer, it is comparatively even to make in the thermoelectric pile that each thermopair is heated, and can increase thermopair group number;
2, with respect to existing air and the heat conduction of GaAs substrate, the thermal conductivity of heat conductive insulating medium floor height promotes that hot-fluid conducts rapidly, helps reducing thermal losses, improves sensitivity and response time.
This structure is based on the MEMS technology, and volume is little, in light weight, low in energy consumption, and compatible mutually with monolithic integrated microwave circuit (MMIC) technology, is convenient to integrated.These a series of advantages are that traditional microwave power detector is incomparable, so it has excellent research and using value.
Description of drawings
Fig. 1 is the microwave power detector vertical view.
Fig. 2 is the microwave power detector sectional view.
Comprise among the figure: coplanar waveguide transmission line 1, tantalum nitride (TaN) resistance 2, heat conductive insulating dielectric layer (BN) 3,
Thermoelectric pile 4, press welding block 5, gallium arsenide (GaAs) substrate 6, gallium aluminium arsenic (AlGaAs) film 7.
Embodiment
The microelectron-mechanical microwave power detector of the utility model is that a kind of heat-conducting medium is filled the terminal type power sensor.Specific embodiments is following:
The employing gallium arsenide is a substrate, on GaAs substrate 6, is designed with coplanar waveguide transmission line 1, tantalum nitride (TaN) resistance 2, heat conductive insulating dielectric layer (BN) 3, thermoelectric pile 4, press welding block 5.
Microwave power detector is through coplanar waveguide transmission line 1 input microwave power signal; Terminal resistance 2 tantalum nitrides absorb microwave power and are converted into heat; Heat conductive insulating dielectric layer 3 conducts heat to thermoelectric pile 4 with the hot-fluid form; Through the Seebeck effect of thermoelectric pile, produce DC voltage then, and from press welding block 5 outputs.
The requirement of heat conductive insulating dielectric material: high insulativity and high thermal conductivity.High-insulativity can reduce lossy microwave, and high heat conductance helps heat conduction.To cost and technological requirement, select boron nitride (BN) material of insulation and high heat conductance here for use.
The preparation method that the microelectron-mechanical heat-conducting medium is filled the terminal type microwave power detector is:
1) substrate: select not Doped GaAs substrate 500 μ m for use,
2) thermopair: epitaxial growth one deck AlGaAs film is as the etch stop layer on the GaAs substrate, and thick 2500 films of epitaxial growth one deck n+ GaAs are as a thermopair arm wherein on the AlGaAs film.Adopt lift-off technology, thick 500/2200 film of sputter layer of Au GeNi/Au is as another arm of thermopair.Wherein AuGeNi is used for forming Ohmic contact with GaAs.
3) tantalum nitride resistance: at substrate surface deposit one deck TaN film, then through mask, exposure, lift-off technology stays the TaN resistance film of graphics field, and resistance is 25 Ω/.
4) heat conductive insulating dielectric layer: between terminal resistance and pyrometer fire-end, through lift-off technology deposit one deck BN heat conducting insulating film.
5) co-planar waveguide line: the seed crystal of sputter one deck 500/1500/300 Ti/Au/Ti on substrate is used to strengthen the adhesiveness of Au and substrate.Remove the Ti layer then, electroplate the thick 2 μ m films of layer of Au as the CPW transmission line.
6) body process technology: substrate thinning is etched to AlGaAs from stopping layer.
Distinguish whether to be the standard of this structure following:
This microelectron-mechanical microwave power detector is a kind of terminal type power sensor that adopts heat-conducting medium to fill.Principle of work is: microwave power detector is through coplanar waveguide transmission line input microwave power signal, eventually
End resistance tantalum nitride absorbs microwave power and is converted into heat, and the heat conductive insulating dielectric layer conducts heat to thermoelectric pile with the hot-fluid form, then through thermoelectric effect, produces DC voltage, and exports from press welding block.
The structure that satisfies above condition promptly is regarded as mechanical heat-conducting medium and fills the terminal type microwave power detector.
Claims (1)
1. a microelectron-mechanical heat-conducting medium is filled the terminal type microwave power detector; It is characterized in that this sensor is substrate (6) with the gallium arsenide; On substrate (6), be provided with coplanar waveguide transmission line (1), tantalum nitride resistance (2), heat conductive insulating dielectric layer (3), thermoelectric pile (4), press welding block (5); Wherein, Coplanar waveguide transmission line (1) has 3 and be positioned at the one side on the substrate (6); Between two coplanar waveguide transmission lines (1), be provided with tantalum nitride resistance (2), heat conductive insulating dielectric layer (3) one side to be positioned at tantalum nitride resistance (2) other, thermoelectric pile (4) is positioned at the another side of heat conductive insulating dielectric layer (3); Press welding block (5) is positioned at the outside of thermoelectric pile (4) and is connected with thermoelectric pile (4), and AlGaAs film (7) is positioned at the below of tantalum nitride resistance (2), heat conductive insulating dielectric layer (3), thermoelectric pile (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204563619U CN202362361U (en) | 2011-11-17 | 2011-11-17 | Microwave power sensor having terminal filled with heat-conducting medium and based on MEMS technique |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011204563619U CN202362361U (en) | 2011-11-17 | 2011-11-17 | Microwave power sensor having terminal filled with heat-conducting medium and based on MEMS technique |
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| CN202362361U true CN202362361U (en) | 2012-08-01 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102401854A (en) * | 2011-11-17 | 2012-04-04 | 东南大学 | Micro-electromechanical heat conducting medium filling terminal type microwave power sensor and preparation method |
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2011
- 2011-11-17 CN CN2011204563619U patent/CN202362361U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102401854A (en) * | 2011-11-17 | 2012-04-04 | 东南大学 | Micro-electromechanical heat conducting medium filling terminal type microwave power sensor and preparation method |
| CN102401854B (en) * | 2011-11-17 | 2014-09-10 | 东南大学 | Micro-electromechanical heat conducting medium filling terminal type microwave power sensor and preparation method |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120801 Termination date: 20131117 |