CN109659353A - The Schottky diode of low dead resistance - Google Patents
The Schottky diode of low dead resistance Download PDFInfo
- Publication number
- CN109659353A CN109659353A CN201811477125.8A CN201811477125A CN109659353A CN 109659353 A CN109659353 A CN 109659353A CN 201811477125 A CN201811477125 A CN 201811477125A CN 109659353 A CN109659353 A CN 109659353A
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- Prior art keywords
- doped region
- heavily doped
- type semiconductor
- semiconductor
- dead resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims abstract description 121
- 239000002184 metal Substances 0.000 claims abstract description 28
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 6
- 229910003465 moissanite Inorganic materials 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention provides a kind of Schottky diodes of low dead resistance, belong to technical field of semiconductor device, including metal anode, metallic cathode, N-type semiconductor channel and semiconductor heavily doped region, metal anode are connect with N-type semiconductor channel, form schottky junction；Metallic cathode is connect with semiconductor heavily doped region, forms Ohmic contact；The insulating medium layer that there is N-type semiconductor channel semiconductor heavily doped region to separate enters semiconductor heavily doped region through interconnecting piece by the radiofrequency signal of schottky junction, reaches metallic cathode.The Schottky diode of low dead resistance provided by the invention, while guaranteeing that N-type semiconductor channel is connected to semiconductor heavily doped region, using insulating medium layer spaced-apart N-type semiconductor channel and semiconductor heavily doped region, so that the radiofrequency signal of schottky junction can only enter semiconductor heavily doped region by connecting portion, eventually arrive at cathode, it does not need to can reduce dead resistance by unspent N-type semiconductor channel.
Description
Technical field
The invention belongs to technical field of semiconductor device, are to be related to a kind of Schottky of low dead resistance more specifically
Diode.
Background technique
Schottky diode is predominant non-linearity semiconductor devices used in frequency multiplication and mixting circuit.Conventional Xiao Te
Based diode structure is followed successively by metal anode, N-type semiconductor channel region, semiconductor heavily doped region and metal yin from top to bottom
Pole.In order to improve the power bearing ability of Schottky diode, the length of channel region should be improved to improve breakdown voltage.But
It is that, since width of depletion region is always less than channel region length, there are a biggish dead resistances for unspent N-type region.Channel
Qu Yuechang, the resistance are bigger.The dead resistance will affect the work cutoff frequency of device, while be also the master for generating energy dissipation
Want factor.
Summary of the invention
The purpose of the present invention is to provide a kind of Schottky diodes of low dead resistance, to solve to exist in the prior art
The high technical problem of dead resistance.
To achieve the above object, the technical solution adopted by the present invention is that: a kind of two pole of Schottky of low dead resistance is provided
Pipe, comprising:
Metal anode is connect with N-type semiconductor channel, forms schottky junction；
Metallic cathode is connect with semiconductor heavily doped region, forms Ohmic contact；
The insulating medium layer that there is the N-type semiconductor channel semiconductor heavily doped region to separate；
The N-type semiconductor channel also has the interconnecting piece connecting with the semiconductor heavily doped region, by the connection
Portion connects the metallic cathode by the semiconductor heavily doped region；
Enter the semiconductor heavily doped region through the interconnecting piece by the radiofrequency signal of the schottky junction, described in arrival
Metallic cathode.
Further, the thickness of the insulating medium layer are as follows: 1nm-100nm.
Further, the material of the insulating medium layer is SiO2、SiN、Al2O3、HfO2, any one of AlN.
Further, the N-type semiconductor is Si, GaAs, InP, GaN, SiC, diamond, Ga2O3, in AlN, InN, BN
It is any.
Further, the semiconductor heavily doped region is Si, GaAs, InP, GaN, SiC, diamond, Ga2O3、AlN、InN、
Any one of BN.
Further, including multiple N-type semiconductor channels, one end of each N-type semiconductor channel with it is described
Metal anode connection, the other end are connect with the semiconductor heavily doped region, and the metallic cathode is connected to the semiconductor weight
The one end of doped region far from the metal anode, the side wall of the N-type semiconductor channel is arranged in the insulating medium layer, described
There is the air gap between metal anode and the semiconductor heavily doped region.
Further, the depth of the air gap are as follows: 10nm-50nm.
Further, each N-type semiconductor channel width is equal are as follows: 1nm-500nm.
Further, the metal anode and the metallic cathode are located at the same side of the semiconductor heavily doped region, institute
The one end for stating semiconductor heavily doped region is connect with the metallic cathode, and the N-type semiconductor channel is arranged in the semiconductor weight
The other end of doped region, the side of the N-type semiconductor channel are connect with the semiconductor heavily doped region, the N-type semiconductor
The insulating medium layer, the metal anode and metal yin are equipped between the bottom surface of channel and the semiconductor heavily doped region
The air gap is equipped between pole.
Further, the N-type semiconductor channel thickness are as follows: 1nm-500nm.Further,.
The beneficial effect of the Schottky diode of low dead resistance provided by the invention is: compared with prior art, this
Invention is while guaranteeing that N-type semiconductor channel is connected to semiconductor heavily doped region, using insulating medium layer spaced-apart N-type half
Conductor channel and semiconductor heavily doped region, so that the radiofrequency signal of schottky junction can only enter semiconductor weight by the position of connection
Doped region eventually arrives at cathode, and cannot not be needed by insulating medium layer through unspent N-type semiconductor channel, can be with
Reduce the dead resistance of the radio frequency state of Schottky diode.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only of the invention some
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the schematic diagram of the vertical structure of the Schottky diode of low dead resistance provided in an embodiment of the present invention；
Fig. 2 is the schematic diagram of the transverse structure of the Schottky diode of low dead resistance provided in an embodiment of the present invention.
Wherein, each appended drawing reference in figure:
1- metal anode；The air gap 2-；3-N type semiconductor channel；4- insulating medium layer；5- semiconductor heavily doped region；
6- metallic cathode.
Specific embodiment
In order to which technical problems, technical solutions and advantages to be solved are more clearly understood, tie below
Accompanying drawings and embodiments are closed, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only
To explain the present invention, it is not intended to limit the present invention.
Also referring to Fig. 1 and Fig. 2, now the Schottky diode of low dead resistance provided by the invention is illustrated.
The Schottky diode of the low dead resistance, including metal anode 1, metallic cathode 6, N-type semiconductor channel 3 and semiconductor weight
Doped region 5, metal anode 1 are connect with N-type semiconductor channel 3, form schottky junction；Metallic cathode 6 and semiconductor heavily doped region 5
Connection forms Ohmic contact；The insulating medium layer 4 that there is N-type semiconductor channel 3 the semiconductor heavily doped region 5 to separate；N-type
Semiconductor channel 3 also has the interconnecting piece connecting with the semiconductor heavily doped region 5, is partly led by the interconnecting piece by described
Weight doped region 5 connects the metallic cathode 6；Enter described half through the interconnecting piece by the radiofrequency signal of the schottky junction
Conductor heavily doped region 5 reaches the metallic cathode 6.
The Schottky diode of low dead resistance provided by the invention, compared with prior art, the present invention are guaranteeing N-type half
While conductor channel 3 is connected to semiconductor heavily doped region 5, using 4 spaced-apart N-type semiconductor channel 3 of insulating medium layer with
Semiconductor heavily doped region 5, so that the radiofrequency signal of schottky junction can only enter semiconductor heavily doped region 5 by the position of connection,
Cathode is eventually arrived at, and cannot not need to can reduce by unspent N-type semiconductor channel 3 by insulating medium layer 4
The dead resistance of the radio frequency state of Schottky diode.
Also referring to Fig. 1 to Fig. 2, one kind of the Schottky diode as low dead resistance provided by the invention is specific
Embodiment, the thickness of the insulating medium layer 4 are as follows: 1nm-100nm.For example, 20nm, 50nm, 80nm etc., insulating medium layer 4
Play the role of isolation, prevent radiofrequency signal from entering semiconductor heavily doped region 5 from the side of N-type semiconductor channel 3, thickness according to
Depending on actual design needs.
Fig. 1 to Fig. 2 is please referred to, a kind of specific implementation of the Schottky diode as low dead resistance provided by the invention
Mode, the material of the insulating medium layer 4 are SiO2、SiN、Al2O3、HfO2, any one of AlN.
Refering to fig. 1 and Fig. 2, a kind of specific embodiment party of the Schottky diode as low dead resistance provided by the invention
Formula, the N-type semiconductor are Si, GaAs, InP, GaN, SiC, diamond, Ga2O3, any one of AlN, InN, BN.
Fig. 1 to Fig. 2 is please referred to, a kind of specific implementation of the Schottky diode as low dead resistance provided by the invention
Mode, the semiconductor heavily doped region 5 are Si, GaAs, InP, GaN, SiC, diamond, Ga2O3, any in AlN, InN, BN
Kind.
Referring to Fig. 1, a kind of specific embodiment of the Schottky diode as low dead resistance provided by the invention,
Including multiple N-type semiconductor channels 3, one end of each N-type semiconductor channel 3 is connect with the metal anode 1, separately
One end is connect with the semiconductor heavily doped region 5, and the metallic cathode 6 is connected to the semiconductor heavily doped region 5 far from institute
One end of metal anode 1 is stated, the side wall of the N-type semiconductor channel 3, the metal anode 1 is arranged in the insulating medium layer 4
There is the air gap 2 between the semiconductor heavily doped region 5.The air gap is set, metal anode 1 and metallic cathode 6 are prevented
Connection.The present invention is while guaranteeing that N-type semiconductor channel 3 is connected to semiconductor heavily doped region 5, using insulating medium layer 4
N-type semiconductor channel 3 and semiconductor heavily doped region 5 are separated, so that the radiofrequency signal of schottky junction can only pass through the portion of connection
Position enters semiconductor heavily doped region 5, eventually arrives at cathode, and cannot not be needed by insulating medium layer 4 through unspent N
Type semiconductor channel 3 can reduce the dead resistance of the radio frequency state of Schottky diode.
Refering to fig. 1, a kind of specific embodiment as the Schottky diode of low dead resistance provided by the invention, institute
State the depth of the air gap are as follows: 10nm-50nm.It can be 15nm, 20nm, 30nm, 35nm, 40nm etc., the size is according to reality
It is not limited to this depending on design requirement.
Referring to Fig. 1, a kind of specific embodiment of the Schottky diode as low dead resistance provided by the invention,
Each 3 width of N-type semiconductor channel is equal are as follows: 1nm-500nm, width 10nm, 50nm, 100nm, 150nm, 200nm,
300nm, 400nm, 500nm etc..
Referring to Fig. 2, a kind of specific embodiment of the Schottky diode as low dead resistance provided by the invention,
The metal anode 1 and the metallic cathode 6 are located at the same side of the semiconductor heavily doped region 5, the semiconductor heavy doping
The one end in area 5 is connect with the metallic cathode 6, and the another of the semiconductor heavily doped region 5 is arranged in the N-type semiconductor channel 3
One end, the side of the N-type semiconductor channel 3 are connect with the semiconductor heavily doped region 5, the bottom of the N-type semiconductor channel 3
Be equipped with the insulating medium layer 4 between face and the semiconductor heavily doped region 5, the metal anode 1 and the metallic cathode 6 it
Between be equipped with the air gap 2.The air gap is set again, metal anode 1 is prevented to be connected to metallic cathode 6.The present invention is guaranteeing N-type half
While conductor channel 3 is connected to semiconductor heavily doped region 5, using 4 spaced-apart N-type semiconductor channel 3 of insulating medium layer with
Semiconductor heavily doped region 5, so that the radiofrequency signal of schottky junction can only enter semiconductor heavily doped region 5 by the position of connection,
Cathode is eventually arrived at, and cannot not need to can reduce by unspent N-type semiconductor channel 3 by insulating medium layer 4
The dead resistance of the radio frequency state of Schottky diode.
Referring to Fig. 2, a kind of specific embodiment of the Schottky diode as low dead resistance provided by the invention,
3 thickness of N-type semiconductor channel are as follows: 1nm-500nm.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. the Schottky diode of low dead resistance characterized by comprising
Metal anode is connect with N-type semiconductor channel, forms schottky junction；
Metallic cathode is connect with semiconductor heavily doped region, forms Ohmic contact；
The insulating medium layer that there is the N-type semiconductor channel semiconductor heavily doped region to separate；
The N-type semiconductor channel also has the interconnecting piece connecting with the semiconductor heavily doped region, logical by the interconnecting piece
It crosses the semiconductor heavily doped region and connects the metallic cathode；
Enter the semiconductor heavily doped region through the interconnecting piece by the radiofrequency signal of the schottky junction, reaches the metal
Cathode.
2. the Schottky diode of low dead resistance as described in claim 1, which is characterized in that the thickness of the insulating medium layer
Degree are as follows: 1nm-100nm.
3. the Schottky diode of low dead resistance as described in claim 1, which is characterized in that the material of the insulating medium layer
Matter is SiO2、SiN、Al2O3、HfO2, any one of AlN.
4. the Schottky diode of low dead resistance as described in claim 1, which is characterized in that the N-type semiconductor be Si,
GaAs, InP, GaN, SiC, diamond, Ga2O3, any one of AlN, InN, BN.
5. the Schottky diode of low dead resistance as described in claim 1, which is characterized in that the semiconductor heavily doped region
For Si, GaAs, InP, GaN, SiC, diamond, Ga2O3, any one of AlN, InN, BN.
6. the Schottky diode of low dead resistance as described in any one in claim 1-5, which is characterized in that including multiple institutes
State N-type semiconductor channel, one end of each N-type semiconductor channel is connect with the metal anode, the other end with it is described
The connection of semiconductor heavily doped region, the metallic cathode are connected to one of the semiconductor heavily doped region far from the metal anode
The side wall of the N-type semiconductor channel, the metal anode and the semiconductor heavy doping is arranged in end, the insulating medium layer
There is the air gap between area.
7. the Schottky diode of low dead resistance as claimed in claim 6, which is characterized in that the depth of the air gap
Are as follows: 10nm-50nm.
8. the Schottky diode of low dead resistance as claimed in claim 6, which is characterized in that each N-type semiconductor
Channel width is equal are as follows: 1nm-500nm.
9. the Schottky diode of low dead resistance as described in any one in claim 1-5, which is characterized in that the metal sun
Pole and the metallic cathode are located at the same side of the semiconductor heavily doped region, one end of the semiconductor heavily doped region with it is described
The other end of the semiconductor heavily doped region, the N-type semiconductor is arranged in metallic cathode connection, the N-type semiconductor channel
The side of channel is connect with the semiconductor heavily doped region, the bottom surface of the N-type semiconductor channel and the semiconductor heavy doping
It is equipped with the insulating medium layer between area, the air gap is equipped between the metal anode and the metallic cathode.
10. the Schottky diode of low dead resistance as claimed in claim 9, which is characterized in that the N-type semiconductor channel
Thickness are as follows: 1nm-500nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811477125.8A CN109659353B (en) | 2018-12-05 | 2018-12-05 | Low parasitic resistance schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811477125.8A CN109659353B (en) | 2018-12-05 | 2018-12-05 | Low parasitic resistance schottky diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109659353A true CN109659353A (en) | 2019-04-19 |
| CN109659353B CN109659353B (en) | 2021-12-24 |
Family
ID=66112540
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811477125.8A Active CN109659353B (en) | 2018-12-05 | 2018-12-05 | Low parasitic resistance schottky diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110197854A (en) * | 2019-06-20 | 2019-09-03 | 中国电子科技集团公司第十三研究所 | Gallium oxide SBD terminal structure and preparation method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1420569A (en) * | 2001-11-21 | 2003-05-28 | 同济大学 | Voltage-withstanding layer consisting of high dielectric coefficient medium and semiconductor |
| US20110084353A1 (en) * | 2009-10-12 | 2011-04-14 | Pfc Device Corporation | Trench schottky rectifier device and method for manufacturing the same |
| US20130217216A1 (en) * | 2006-06-08 | 2013-08-22 | Texas Instruments Incorporated | Unguarded Schottky Barrier Diodes with Dielectric Underetch at Silicide Interface |
| CN108807555A (en) * | 2018-08-08 | 2018-11-13 | 电子科技大学 | A kind of schottky diode device |
-
2018
- 2018-12-05 CN CN201811477125.8A patent/CN109659353B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1420569A (en) * | 2001-11-21 | 2003-05-28 | 同济大学 | Voltage-withstanding layer consisting of high dielectric coefficient medium and semiconductor |
| US20130217216A1 (en) * | 2006-06-08 | 2013-08-22 | Texas Instruments Incorporated | Unguarded Schottky Barrier Diodes with Dielectric Underetch at Silicide Interface |
| US20110084353A1 (en) * | 2009-10-12 | 2011-04-14 | Pfc Device Corporation | Trench schottky rectifier device and method for manufacturing the same |
| CN108807555A (en) * | 2018-08-08 | 2018-11-13 | 电子科技大学 | A kind of schottky diode device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110197854A (en) * | 2019-06-20 | 2019-09-03 | 中国电子科技集团公司第十三研究所 | Gallium oxide SBD terminal structure and preparation method |
| CN110197854B (en) * | 2019-06-20 | 2023-02-24 | 中国电子科技集团公司第十三研究所 | Gallium oxide SBD terminal structure and preparation method |
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| CN109659353B (en) | 2021-12-24 |
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