CN109659353B - Low parasitic resistance schottky diode - Google Patents
Low parasitic resistance schottky diode Download PDFInfo
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- CN109659353B CN109659353B CN201811477125.8A CN201811477125A CN109659353B CN 109659353 B CN109659353 B CN 109659353B CN 201811477125 A CN201811477125 A CN 201811477125A CN 109659353 B CN109659353 B CN 109659353B
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- heavily doped
- type semiconductor
- parasitic resistance
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- schottky diode
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- 230000003071 parasitic effect Effects 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 119
- 239000002184 metal Substances 0.000 claims abstract description 51
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 6
- 229910003465 moissanite Inorganic materials 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention provides a Schottky diode with low parasitic resistance, which belongs to the technical field of semiconductor devices and comprises a metal anode, a metal cathode, an N-type semiconductor channel and a semiconductor heavily doped region, wherein the metal anode is connected with the N-type semiconductor channel to form a Schottky junction; the metal cathode is connected with the semiconductor heavily doped region to form ohmic contact; the N-type semiconductor channel is provided with an insulating medium layer separated from the semiconductor heavily doped region, and a radio frequency signal passing through the Schottky junction enters the semiconductor heavily doped region through the connecting part and reaches the metal cathode. The Schottky diode with low parasitic resistance provided by the invention has the advantages that the N-type semiconductor channel is communicated with the semiconductor heavily doped region, and the N-type semiconductor channel and the semiconductor heavily doped region are separated by the insulating medium layer part, so that a radio-frequency signal of the Schottky junction can only enter the semiconductor heavily doped region through the connecting part and finally reaches the cathode, and the parasitic resistance can be reduced without passing through the N-type semiconductor channel which is not depleted.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a Schottky diode with low parasitic resistance.
Background
Schottky diodes are the main non-linear semiconductor devices used in frequency doubling and mixing circuits. The conventional Schottky diode structure sequentially comprises a metal anode, an N-type semiconductor channel region, a semiconductor heavily doped region and a metal cathode from top to bottom. To improve the power-withstanding capability of the schottky diode, the length of the channel region should be increased to increase the breakdown voltage. However, the undepleted N-type region has a large parasitic resistance because the depletion region width is always smaller than the channel region length. The longer the channel region, the greater the resistance. This parasitic resistance affects the operating cut-off frequency of the device and is also a major factor in the dissipation of energy.
Disclosure of Invention
The invention aims to provide a Schottky diode with low parasitic resistance, which aims to solve the technical problem of high parasitic resistance in the prior art.
In order to achieve the purpose, the invention adopts the technical scheme that: provided is a low parasitic resistance Schottky diode, including:
the metal anode is connected with the N-type semiconductor channel to form a Schottky junction;
the metal cathode is connected with the semiconductor heavily doped region to form ohmic contact;
the N-type semiconductor channel is provided with an insulating medium layer separated from the semiconductor heavily doped region;
the N-type semiconductor channel is also provided with a connecting part connected with the semiconductor heavily doped region, and the metal cathode is connected with the connecting part through the semiconductor heavily doped region;
and the radio-frequency signal passing through the Schottky junction enters the semiconductor heavily-doped region through the connecting part and reaches the metal cathode.
Further, the thickness of the insulating medium layer is as follows: 1nm-100 nm.
Furthermore, the insulating medium layer is made of SiO2、SiN、Al2O3、HfO2And AlN.
Further, the N-type semiconductor is Si, GaAs, InP, GaN, SiC, diamond, Ga2O3AlN, InN, and BN.
Further, the semiconductor heavily doped region is Si, GaAs, InP, GaN, SiC, diamond, Ga2O3AlN, InN, and BN.
The metal anode structure further comprises a plurality of N-type semiconductor channels, one end of each N-type semiconductor channel is connected with the metal anode, the other end of each N-type semiconductor channel is connected with the heavily doped semiconductor region, the metal cathode is connected to one end, far away from the metal anode, of the heavily doped semiconductor region, the insulating medium layer is arranged on the side wall of each N-type semiconductor channel, and an air gap is formed between each metal anode and the heavily doped semiconductor region.
Further, the depth of the air gap is: 10nm-50 nm.
Further, each of the N-type semiconductor channel widths is: 1nm-500 nm.
Furthermore, the metal anode and the metal cathode are located on the same side of the heavily doped semiconductor region, one end of the heavily doped semiconductor region is connected with the metal cathode, the N-type semiconductor channel is arranged at the other end of the heavily doped semiconductor region, the side face of the N-type semiconductor channel is connected with the heavily doped semiconductor region, the insulating medium layer is arranged between the bottom face of the N-type semiconductor channel and the heavily doped semiconductor region, and an air gap is arranged between the metal anode and the metal cathode.
Further, the thickness of the N-type semiconductor channel is as follows: 1nm-500 nm. Further, the method is simple and easy to operate.
The Schottky diode with low parasitic resistance provided by the invention has the beneficial effects that: compared with the prior art, the Schottky junction device has the advantages that the N-type semiconductor channel is communicated with the semiconductor heavily doped region, the N-type semiconductor channel and the semiconductor heavily doped region are separated by the insulating medium layer part, so that a radio-frequency signal of the Schottky junction can only enter the semiconductor heavily doped region through the connected part and finally reaches the cathode, but can not pass through the insulating medium layer, the unspent N-type semiconductor channel is not needed, and the parasitic resistance of the Schottky diode in a radio-frequency state can be reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic diagram illustrating a vertical structure of a low parasitic resistance schottky diode according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a lateral structure of a low parasitic resistance schottky diode according to an embodiment of the present invention.
Wherein, in the figures, the respective reference numerals:
1-a metal anode; 2-air gap; a 3-N type semiconductor channel; 4-an insulating dielectric layer; 5-a semiconductor heavily doped region; 6-metal cathode.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 and fig. 2, a schottky diode with low parasitic resistance according to the present invention will be described. The Schottky diode with the low parasitic resistance comprises a metal anode 1, a metal cathode 6, an N-type semiconductor channel 3 and a semiconductor heavily doped region 5, wherein the metal anode 1 is connected with the N-type semiconductor channel 3 to form a Schottky junction; the metal cathode 6 is connected with the semiconductor heavily doped region 5 to form ohmic contact; the N-type semiconductor channel 3 is provided with an insulating medium layer 4 separated from the semiconductor heavily doped region 5; the N-type semiconductor channel 3 is also provided with a connecting part connected with the semiconductor heavily doped region 5, and the metal cathode 6 is connected with the connecting part through the semiconductor heavily doped region 5; the radio frequency signal passing through the schottky junction enters the semiconductor heavily doped region 5 through the connection part and reaches the metal cathode 6.
Compared with the prior art, the Schottky diode with low parasitic resistance provided by the invention has the advantages that the N-type semiconductor channel 3 is communicated with the semiconductor heavily doped region 5, and the N-type semiconductor channel 3 and the semiconductor heavily doped region 5 are partially separated by the insulating medium layer 4, so that a radio-frequency signal of a Schottky junction can only enter the semiconductor heavily doped region 5 through a connected part and finally reaches a cathode, but can not pass through the insulating medium layer 4, and does not need to pass through the N-type semiconductor channel 3 which is not exhausted, and the parasitic resistance of the Schottky diode in a radio-frequency state can be reduced.
Referring to fig. 1 to fig. 2, as an embodiment of the low parasitic resistance schottky diode according to the present invention, the thickness of the insulating dielectric layer 4 is: 1nm-100 nm. For example, 20nm, 50nm, 80nm, etc., the insulating dielectric layer 4 plays a role of isolation, and prevents the radio frequency signal from entering the heavily doped semiconductor region 5 from the side of the N-type semiconductor channel 3, and the thickness of the insulating dielectric layer is determined according to the actual design requirement.
Referring to fig. 1 to fig. 2, in an embodiment of the low parasitic resistance schottky diode according to the present invention, the insulating dielectric layer 4 is made of SiO2、SiN、Al2O3、HfO2And AlN.
Referring to fig. 1 and 2, as an embodiment of the schottky diode with low parasitic resistance provided by the present invention, the N-type semiconductor is Si, GaAs, InP, GaN, SiC, diamond, Ga2O3AlN, InN, and BN.
Referring to fig. 1 to 2, in an embodiment of the low parasitic resistance schottky diode according to the present invention, the heavily doped semiconductor region 5 is Si, GaAs, InP, GaN, SiC, diamond, Ga2O3AlN, InN, and BN.
Referring to fig. 1, as a specific embodiment of the low parasitic resistance schottky diode provided by the present invention, the schottky diode includes a plurality of N-type semiconductor channels 3, one end of each N-type semiconductor channel 3 is connected to the metal anode 1, the other end is connected to the heavily doped semiconductor region 5, the metal cathode 6 is connected to one end of the heavily doped semiconductor region 5 away from the metal anode 1, the insulating dielectric layer 4 is disposed on the sidewall of the N-type semiconductor channel 3, and an air gap 2 is formed between the metal anode 1 and the heavily doped semiconductor region 5. An air gap is provided to prevent the metal anode 1 from communicating with the metal cathode 6. According to the Schottky diode and the manufacturing method thereof, the N-type semiconductor channel 3 is communicated with the semiconductor heavily doped region 5, and meanwhile the N-type semiconductor channel 3 and the semiconductor heavily doped region 5 are partially separated by the insulating medium layer 4, so that a radio-frequency signal of the Schottky junction can only enter the semiconductor heavily doped region 5 through a connected part and finally reaches a cathode, but cannot pass through the insulating medium layer 4, the unspent N-type semiconductor channel 3 is not required, and the parasitic resistance of the Schottky diode in a radio-frequency state can be reduced.
Referring to fig. 1, as an embodiment of the schottky diode with low parasitic resistance provided by the present invention, the depth of the air gap is: 10nm-50 nm. The size may be 15 nm, 20nm, 30 nm, 35 nm, 40 nm, etc., and the size is determined according to the actual design requirement, but is not limited thereto.
Referring to fig. 1, as an embodiment of the low parasitic resistance schottky diode according to the present invention, each of the N-type semiconductor channels 3 has a width: 1nm-500nm, and width of 10nm, 50nm, 100nm, 150 nm, 200 nm, 300 nm, 400 nm, 500nm, etc.
Referring to fig. 2, as a specific embodiment of the low parasitic resistance schottky diode provided in the present invention, the metal anode 1 and the metal cathode 6 are located on the same side of the heavily doped semiconductor region 5, one end of the heavily doped semiconductor region 5 is connected to the metal cathode 6, the N-type semiconductor channel 3 is disposed at the other end of the heavily doped semiconductor region 5, a side surface of the N-type semiconductor channel 3 is connected to the heavily doped semiconductor region 5, the insulating dielectric layer 4 is disposed between a bottom surface of the N-type semiconductor channel 3 and the heavily doped semiconductor region 5, and an air gap 2 is disposed between the metal anode 1 and the metal cathode 6. An air gap is provided to prevent the metal anode 1 from communicating with the metal cathode 6. According to the Schottky diode and the manufacturing method thereof, the N-type semiconductor channel 3 is communicated with the semiconductor heavily doped region 5, and meanwhile the N-type semiconductor channel 3 and the semiconductor heavily doped region 5 are partially separated by the insulating medium layer 4, so that a radio-frequency signal of the Schottky junction can only enter the semiconductor heavily doped region 5 through a connected part and finally reaches a cathode, but cannot pass through the insulating medium layer 4, the unspent N-type semiconductor channel 3 is not required, and the parasitic resistance of the Schottky diode in a radio-frequency state can be reduced.
Referring to fig. 2, as an embodiment of the low parasitic resistance schottky diode according to the present invention, the thickness of the N-type semiconductor channel 3 is: 1nm-500 nm.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (7)
1. A low parasitic resistance schottky diode comprising:
the metal anode is connected with the N-type semiconductor channel to form a Schottky junction;
the metal cathode is connected with the semiconductor heavily doped region to form ohmic contact;
the N-type semiconductor channel is provided with an insulating medium layer separated from the semiconductor heavily doped region;
the N-type semiconductor channel is also provided with a connecting part connected with the semiconductor heavily doped region, and the metal cathode is connected with the connecting part through the semiconductor heavily doped region;
a radio frequency signal passing through the Schottky junction enters the semiconductor heavily doped region through the connecting part and reaches the metal cathode;
the metal anode structure further comprises a plurality of N-type semiconductor channels, one end of each N-type semiconductor channel is connected with the metal anode, the other end of each N-type semiconductor channel is connected with the heavily doped semiconductor region, the metal cathode is connected to one end, far away from the metal anode, of the heavily doped semiconductor region, the insulating medium layer is arranged on the side wall of each N-type semiconductor channel, and an air gap is formed between each metal anode and the heavily doped semiconductor region.
2. The low parasitic resistance schottky diode of claim 1 wherein the thickness of the dielectric layer is: 1nm-100 nm.
3. The low parasitic resistance schottky diode of claim 1 wherein the dielectric layer is SiO2、SiN、Al2O3、HfO2And AlN.
4. The low parasitic resistance schottky diode of claim 1 wherein the N-type semiconductor is Si, GaAs, InP, GaN, SiC, diamond, Ga2O3AlN, InN, and BN.
5. The low parasitic resistance schottky diode of claim 1 wherein the heavily doped semiconductor region is Si, GaAs, InP, GaN, SiC, diamond, Ga2O3AlN, InN, and BN.
6. The low parasitic resistance schottky diode of claim 1 wherein the depth of the air gap is: 10nm-50 nm.
7. The low parasitic resistance schottky diode of claim 1 wherein each of said N-type semiconductor channel widths is: 1nm-500 nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811477125.8A CN109659353B (en) | 2018-12-05 | 2018-12-05 | Low parasitic resistance schottky diode |
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| CN201811477125.8A CN109659353B (en) | 2018-12-05 | 2018-12-05 | Low parasitic resistance schottky diode |
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| CN109659353B true CN109659353B (en) | 2021-12-24 |
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| CN110197854B (en) * | 2019-06-20 | 2023-02-24 | 中国电子科技集团公司第十三研究所 | Gallium oxide SBD terminal structure and preparation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1420569A (en) * | 2001-11-21 | 2003-05-28 | 同济大学 | Voltage-withstanding layer consisting of high dielectric coefficient medium and semiconductor |
| CN108807555A (en) * | 2018-08-08 | 2018-11-13 | 电子科技大学 | A kind of schottky diode device |
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| US8435873B2 (en) * | 2006-06-08 | 2013-05-07 | Texas Instruments Incorporated | Unguarded Schottky barrier diodes with dielectric underetch at silicide interface |
| TWI455209B (en) * | 2009-10-12 | 2014-10-01 | Pfc Device Co | Trench mos p-n junction schottky diode device and method for manufacturing the same |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1420569A (en) * | 2001-11-21 | 2003-05-28 | 同济大学 | Voltage-withstanding layer consisting of high dielectric coefficient medium and semiconductor |
| CN108807555A (en) * | 2018-08-08 | 2018-11-13 | 电子科技大学 | A kind of schottky diode device |
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