CN102411087B - 90-degree angle four-input micro electromechanical microwave power sensor and preparation method thereof - Google Patents
90-degree angle four-input micro electromechanical microwave power sensor and preparation method thereof Download PDFInfo
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- CN102411087B CN102411087B CN 201110229449 CN201110229449A CN102411087B CN 102411087 B CN102411087 B CN 102411087B CN 201110229449 CN201110229449 CN 201110229449 CN 201110229449 A CN201110229449 A CN 201110229449A CN 102411087 B CN102411087 B CN 102411087B
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Abstract
The invention discloses a 90-degree angle four-input micro electromechanical microwave power sensor, which is provided with four coplanar waveguide (CPW) input ends for transmitting microwave signals, wherein the CPW input ends are mutually symmetrically placed and form angles of 90 degrees with one another, two terminal matching resistors are connected to each CPW output end, a thermocouple is arranged nearby each terminal matching resistor, the four pairs of thermocouples are also symmetrically placed and connected in series to form a thermopile, and the four pairs of thermocouples also form angles of 90 degrees with one another, so that measurement of four-input microwave power is realized. The four-input micro electromechanical microwave power sensor reduces the area of a chip, improves the integration degree, and also has the advantages of the conventional thermoelectric microwave power sensor such as low loss, high sensitivity, good linearity and the like.
Description
Technical field
The present invention proposes and be 90o angle four input microelectron-mechanical microwave power detector and preparation methods, belong to the technical field of microelectromechanical systems (MEMS).
Background technology
In research of microwave technology, microwave power is an important parameter that characterizes the microwave signal feature, and the measurement of microwave power has very important status in wireless application and measuring technique.At present, microwave power detector based on diode is one of the device of measuring power that is widely used, non-linear and the rectification characteristic that it utilizes diode current-voltage curve, be converted to low frequency signal by microwave signal, proportional at the microwave power of this low frequency signal of square law district and input.It has dynamic range and the advantage such as speed is fast, yet measuring accuracy is low and need the extra shortcomings such as attenuator while measuring high power.Along with the fast development of MEMS technology, and, to the further investigation of MEMS technology, make to realize that based on the MEMS technology 90o angle four input microwave power detectors that are of microwave power measurement become possibility.The present invention is based on the microwave power detector of this principle of work.
Summary of the invention
technical matters:the invention provides a kind of 90o angle four that is based on the MEMS technology and input microwave power detector and preparation methods, place four co-planar waveguides (CPW) by symmetry, they are the angle of 90o each other, output terminal at each co-planar waveguide connects two terminal build-out resistors, a thermopair is arranged near each terminal build-out resistor, these four pairs of thermopairs are also become to the symmetrical formation thermoelectric pile of placing and be connected in series, these four pairs of thermopairs are the angle of 90o each other too, thereby realize the measurement of four input microwave powers; It has reduced chip area greatly, has improved integrated level.
technical scheme:it is substrate that the 90o of being of the present invention angle four input microelectron-mechanical microwave power detectors be take gallium arsenide (GaAs), be provided with four CPW, eight terminal build-out resistors, one and form thermoelectric pile that four pairs of thermoelectricity form occasionally, two output press welding blocks, metal fin and connecting line by eight thermopairs on substrate, form a MEMS substrate film structure under substrate:
CPW, for realizing the transmission of microwave signal, adopts gold copper-base alloy.Each CPW is comprised of the signal wire of a CPW and the ground wire of two CPW.
The terminal build-out resistor adopts tantalum-nitride material to make, and absorbs the microwave power by the transmission of CPW input end fully, and is converted to heat.
Thermoelectric pile forms four pairs of thermoelectricity by eight thermopairs and forms occasionally, and described thermopair comprises semiconductor thermocouple arm and metal thermocouple arm, adopts gold and lightly doped GaAs material to form.The close terminal build-out resistor of each thermopair, but with this terminal build-out resistor, be not connected; Thermoelectric pile absorbs this heat near an end of terminal resistance, and cause the rising of this end temperature, be the hot junction of thermoelectric pile, yet the temperature of the other end of thermoelectric pile is used as environment temperature, be the cold junction of thermoelectric pile, difference due to the cold two ends of thermoelectric pile heat temperature according to the Seebeck effect, produces the output of thermoelectrical potential on the output press welding block of thermoelectric pile.
Between thermopair and between thermoelectric pile and output press welding block, by connecting line, realize being connected.
Metal fin adopts gold copper-base alloy to make, by the cold junction of thermoelectric pile around, be environment temperature for the cold junction temperature of maintaining heat pile, thereby improve the temperature difference at the cold two ends of thermoelectric pile heat.
The efficiency of being transmitted to the hot junction of thermoelectric pile by terminal resistance in order to improve heat, and then the temperature difference at raising thermoelectric pile two ends, to improve the sensitivity of microwave power detector, can, by the gallium arsenide substrate of below, the hot junction of terminal resistance and thermoelectric pile by MEMS back-etching technology etching attenuate, form the substrate film structure.
On physical construction, CPW, terminal build-out resistor, thermoelectric pile, output press welding block, metal fin and connecting line are produced on same GaAs substrate.
The 90o of being of the present invention angle four input microelectron-mechanical microwave power detectors are placed four CPW by symmetry, they are the angle of 90o each other, output terminal at each CPW connects two terminal build-out resistors, a thermopair is arranged near each terminal build-out resistor, these four pairs of thermopairs are also become to the symmetrical formation thermoelectric pile of placing and be connected in series, these four pairs of thermopairs are the angle of 90o each other too, thereby realize the measurement of four input microwave powers.When one, two, three or four microwave signals to be measured are introduced by one, two, three or four CPW input ends respectively, terminal build-out resistor in its CPW output terminal parallel connection absorbs respectively these microwave powers and produces heat, terminal resistance temperature is on every side raise, be placed near the thermopair of this terminal resistance and measure respectively its temperature difference, based on the Seebeck effect, produce the output of thermoelectrical potential on the output press welding block of thermoelectric pile, thereby realize the measurement of single input, dual input, three inputs or four input microwave powers.
The preparation method who is 90o angle four input microelectron-mechanical microwave power detectors is:
1) preparing substrate: select the semi-insulating GaAs substrate of extension as substrate, wherein extension N
+the doping content of gallium arsenide is for being 10
18cm
-3, its square resistance be 100～130 Ω/
?;
2) at the N of extension
+gallium arsenide substrate applies photoresist, retains the photoresist that preparation is made ohmic contact regions and begun to take shape the semiconductor thermocouple arm of thermoelectric pile, then removes the N of the extension in photoresist place
+gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm that begins to take shape, being completed into its doping content is 10
17cm
-3the semiconductor thermocouple arm of thermoelectric pile;
4) apply photoresist on the substrate obtained in step 3), remove the photoresist that the metal thermocouple arm place of thermoelectric pile is made in preparation;
5) sputter gold germanium nickel/gold on substrate, its thickness is 2700 altogether;
6) peel off and remove the photoresist stayed in step 4), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm of formation thermoelectric pile removed;
7) apply photoresist on the substrate obtained in step 6), remove the photoresist that terminal build-out resistor place is made in preparation;
8) sputter tantalum nitride on substrate, its thickness is 1
μm;
9) photoresist lift off stayed in step 7) is removed, the tantalum nitride above related removal photoresist, begin to take shape the terminal build-out resistor consisted of tantalum nitride;
10) apply photoresist on gallium arsenide substrate, remove the photoresist that CPW, metal fin, output press welding block and connecting line place are made in preparation;
11) on substrate by the evaporation mode layer of gold of growing, its thickness is 0.3
μm;
12) photoresist that step 10) stayed is removed, and has relatedly removed the gold above the photoresist, begins to take shape CPW, metal fin, output press welding block and connecting line;
13) anti-carve tantalum nitride, form the terminal build-out resistor be connected with the CPW output terminal, its square resistance be 25 Ω/
?;
14) by evaporation mode, grow for the down payment of electroplating: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
15) apply photoresist, remove preparation and make CPW, the photoresist in metal fin, output press welding block and connecting line place;
16) electroplate layer of gold, its thickness is 2
μm;
17) remove the photoresist stayed in step 15);
18) anti-carve titanium/gold/titanium, the corrosion down payment, form CPW, metal fin, output press welding block and connecting line;
19) by this gallium arsenide substrate thinning back side to 100
μm;
20), at the backside coating photoresist of gallium arsenide substrate, remove preparation and form the photoresist in membrane structure place at the gallium arsenide back side;
21) gallium arsenide substrate of below, the hot junction of etching attenuate terminal build-out resistor and thermoelectric pile, form membrane structure, etching 80
μthe substrate thickness of m, retain 20
μthe membrane structure of m.
beneficial effect:the 90o of being of the present invention angle four input microelectron-mechanical microwave power detectors not only have advantages of traditional Thermoelectric Microwave Power Sensors such as the linearity that low-loss, high sensitivity are become reconciled, and have advantages of the measurement that realizes four input microwave powers, high integrated level and with the GaAs single-chip microwave integration circuit compatibility.
The accompanying drawing explanation
Fig. 1 is the schematic diagram that is 90o angle four input microelectron-mechanical microwave power detectors;
Fig. 2 is the A-A sectional view that is 90o angle four input microelectron-mechanical microwave power detectors;
Fig. 3 is the B-B sectional view that is 90o angle four input microelectron-mechanical microwave power detectors;
Figure comprises: four microwave signal input ends 1,2,3 and 4, CPW 5, terminal build-out resistor 6, the thermoelectric pile consisted of eight thermopairs 7, semiconductor thermocouple arm 8, metal thermocouple arm 9, metal fin 10, output press welding block 11, the membrane structure 12 of MEMS substrate, connecting line 13, gallium arsenide substrate 14.
Embodiment
The specific embodiments that is 90o angle four input microelectron-mechanical microwave power detectors of the present invention is as follows:
Be provided with four CPW 5, eight terminal build-out resistors 6, thermoelectric pile that forms four pairs of thermopairs 7 by eight thermopairs 7 and form, two output press welding blocks 11, metal fin 10 and a connecting line 13 on gallium arsenide substrate 14, at substrate, form a MEMS substrate film structure 12 14 times:
Terminal build-out resistor 6 adopts tantalum-nitride material to make, and absorbs the microwave power by CPW 5 input ends 1,2,3 and 4 transmission fully, and is converted to heat.
Thermoelectric pile forms four pairs of thermopairs 7 by eight thermopairs 7 and forms, and described thermopair 7 comprises semiconductor thermocouple arm 8 and metal thermocouple arm 9, adopts gold and lightly doped GaAs material to form.The close terminal build-out resistor 6 of each thermopair 7, but with this terminal resistance 6, be not connected; Thermoelectric pile absorbs this heat near an end of terminal resistance 6, and cause the rising of this end temperature, be the hot junction of thermoelectric pile, yet the temperature of the other end of thermoelectric pile is used as environment temperature, be the cold junction of thermoelectric pile, difference due to the cold two ends of thermoelectric pile heat temperature according to the Seebeck effect, produces the output of thermoelectrical potential on the output press welding block 11 of thermoelectric pile.
Between thermopair 7 and between thermoelectric pile and output press welding block 11, by connecting line 13, realize being connected.
Metal fin 10 adopts gold copper-base alloys to make, by the cold junction of thermoelectric pile around, be environment temperature for the cold junction temperature of maintaining heat pile, thereby improve the temperature difference at the cold two ends of thermoelectric pile heat.
The efficiency of being transmitted to the hot junction of thermoelectric pile by terminal resistance 6 in order to improve heat, and then the temperature difference at raising thermoelectric pile two ends, to improve the sensitivity of microwave power detector, can, by the gallium arsenide substrate 14 of below, the hot junction of terminal resistance 6 and thermoelectric pile by MEMS back-etching technology etching attenuate, form substrate film structure 12.
On physical construction, CPW 5, terminal build-out resistor 6, thermoelectric pile, output press welding block 11, metal fin 10 and connecting line 13 are produced on same GaAs substrate 14.
The 90o of being of the present invention angle four input microelectron-mechanical microwave power detectors are placed four CPW 5 by symmetry, they are the angle of 90o each other, output terminal at each CPW 5 connects two terminal build-out resistors 6, a thermopair 7 is arranged near each terminal build-out resistor 6, these four pairs of thermopairs 7 are also become to the symmetrical formation thermoelectric pile of placing and be connected in series, these four pairs of thermopairs 7 are the angle of 90o each other too, thereby realize the measurement of four input microwave powers.When one, two, three or four microwave signals to be measured are respectively by one, two, three or four CPW input ends 1, 2, during 3 and 4 introducing, terminal build-out resistor 6 in its CPW 5 output terminal parallel connections absorbs respectively these microwave powers and produces heat, terminal resistance 6 temperature is on every side raise, be placed near these terminal resistance 6 thermopairs 7 and measure respectively its temperature difference, based on the Seebeck effect, produce the output of thermoelectrical potential on the output press welding block 11 of thermoelectric pile, thereby realize single input, dual input, the measurement of three inputs or four input microwave powers.
The preparation method who is 90o angle four input microelectron-mechanical microwave power detectors is:
1) preparing substrate 14: select the semi-insulating GaAs substrate 14 of extension as substrate, wherein extension N
+the doping content of gallium arsenide is for being 10
18cm
-3, its square resistance be 100～130 Ω/
?;
2) at the N of extension
+ gallium arsenide substrate 14 applies photoresist, retains the photoresist that preparation is made ohmic contact regions and begun to take shape the semiconductor thermocouple arm 8 of thermoelectric pile, then removes the N of the extension in photoresist place
+gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm 8 that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm 8 that begins to take shape, being completed into its doping content is 10
17cm
-3the semiconductor thermocouple arm 8 of thermoelectric pile;
4) apply photoresist on the substrate 14 obtained in step 3), remove the photoresist that metal thermocouple arm 9 places of thermoelectric pile are made in preparation;
5) sputter gold germanium nickel/gold on substrate 14, its thickness is 2700 altogether;
6) peel off and remove the photoresist stayed in step 4), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm 9 of formation thermoelectric pile removed;
7) apply photoresist on the substrate 14 obtained in step 6), remove the photoresist that terminal build-out resistor 6 places are made in preparation;
8) sputter tantalum nitride on substrate 14, its thickness is 1
μm;
9) photoresist lift off stayed in step 7) is removed, the tantalum nitride above related removal photoresist, begin to take shape the terminal build-out resistor 6 consisted of tantalum nitride;
10) apply photoresist on gallium arsenide substrate 14, remove the photoresist that CPW 5, metal fin 10, output press welding block 11 and connecting line 13 places are made in preparation;
11) on substrate 14 by the evaporation mode layer of gold of growing, its thickness is 0.3
μm;
12) photoresist that step 10) stayed is removed, and has relatedly removed the gold above the photoresist, begins to take shape CPW 5, metal fin 10, output press welding block 11 and connecting line 13;
13) anti-carve tantalum nitride, form the terminal build-out resistor 6 be connected with CPW 5 output terminals, its square resistance be 25 Ω/
?;
14) by evaporation mode, grow for the down payment of electroplating: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
15) apply photoresist, remove preparation and make CPW 5, the photoresist in metal fin 10, output press welding block 11 and connecting line 13 places;
16) electroplate layer of gold, its thickness is 2
μm;
17) remove the photoresist stayed in step 15);
18) anti-carve titanium/gold/titanium, the corrosion down payment, form CPW 5, metal fin 10, output press welding block 11 and connecting line 13;
19) by these gallium arsenide substrate 14 thinning back sides to 100
μm;
20), at the backside coating photoresist of gallium arsenide substrate 14, remove preparation and form the photoresist in membrane structure 12 places at gallium arsenide 14 back sides;
21) gallium arsenide substrate 14 of below, the hot junction of etching attenuate terminal build-out resistor 6 and thermoelectric pile, form membrane structure 12, etching 80
μthe substrate thickness of m, retain 20
μ the membrane structure 12 of m.
Distinguish that to be whether the standard of this structure as follows:
The 90o angle four input microelectron-mechanical microwave power detectors that are of the present invention, place four CPW 5 by symmetry, they are the angle of 90o each other, output terminal at each CPW connects two terminal build-out resistors 6, a thermopair 7 is arranged near each terminal build-out resistor 6, these four pairs of thermopairs 7 are also become to symmetrical and place and be connected in series the formation thermoelectric pile, these four pairs of thermopairs 7 are the angle of 90o each other too, thereby realize the measurement of four input microwave powers; The structure that meets above condition is considered as the 90o of being of the present invention angle four input microelectron-mechanical microwave power detectors.
Claims (2)
1. one kind is 90o angle four input microelectron-mechanical microwave power detectors, it is characterized in that: this sensor production is on gallium arsenide substrate (14), four CPW(5 are arranged on gallium arsenide substrate (14)), the angle that they are mutually symmetrical and place and be each other 90o, at each CPW(5) output terminal connection two terminal build-out resistors (6), a thermopair (7) is arranged near each terminal build-out resistor, these eight thermopairs (7) form four pairs of thermopairs (7) and also are the symmetrical formation thermoelectric pile of placing and be connected in series, two output press welding blocks (11) are arranged at the two ends of this thermoelectric pile, the hot junction of thermoelectric pile near the cold junction of terminal build-out resistor (6) and thermoelectric pile near metal fin (10), at gallium arsenide substrate (14) back side, MEMS substrate film structure (12) is arranged, it is positioned at the below, hot junction of terminal build-out resistor (6) and thermoelectric pile.
2. 90o angle four input microelectron-mechanical microwave power detectors that are according to claim 1 is characterized in that: for input port (1,2, the 3 and 4) number of transmitting microwave signal, be four, and the angle that is mutually symmetrical and places and be each other 90o.
3, the 90o angle four input microelectron-mechanical microwave power detectors that are according to claim 1, it is characterized in that: each CPW output connects the mode of two terminal build-out resistors (6) for being connected in parallel; Near terminal build-out resistor (6), the four pairs of thermopairs (7) that consist of eight thermopairs (7) are symmetrical equally to be placed, and is each other the angle of 90o; Between thermopair (7) and between thermoelectric pile and output press welding block (11), by connecting line (13), realize being connected.
4. a preparation method who is 90o angle four input microelectron-mechanical microwave power detectors as claimed in claim 1 is characterized in that the preparation method is:
1) prepare gallium arsenide substrate (14): select the semi-insulating GaAs substrate (14) of extension as substrate, wherein extension N
+the doping content of gallium arsenide is 10
18cm
-3, its square resistance be 100～130 Ω/
;
2) at the N of extension
+gallium arsenide substrate (14) applies photoresist, retains the photoresist that preparation is made ohmic contact regions and begun to take shape the semiconductor thermocouple arm (8) of thermoelectric pile, then removes the N of the extension in photoresist place
+gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm (8) that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm (8) that begins to take shape, being completed into its doping content is 10
17cm
-3the semiconductor thermocouple arm (8) of thermoelectric pile;
4) the upper photoresist that applies of the substrate obtained in step 3) (14), the photoresist that the metal thermocouple arm (9) of removal preparation making thermoelectric pile is located;
5) at the upper sputter gold germanium nickel/gold of gallium arsenide substrate (14), its thickness is 2700 altogether;
6) peel off and remove the photoresist stayed in step 4), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm (9) of formation thermoelectric pile removed;
7) the upper photoresist that applies of the substrate obtained in step 6) (14), remove preparation and make the photoresist that terminal build-out resistor (6) is located;
8) at the upper sputter tantalum nitride of gallium arsenide substrate (14), its thickness is 1 μ m;
9) photoresist lift off stayed in step 7) is removed, the tantalum nitride above related removal photoresist, begin to take shape the terminal build-out resistor (6) consisted of tantalum nitride;
10) at the upper photoresist that applies of gallium arsenide substrate (14), remove preparation and make CPW(5), metal fin (10), output press welding block (11) and the local photoresist of connecting line (13);
11) upper by the evaporation mode layer of gold of growing in gallium arsenide substrate (14), its thickness is 0.3 μ m;
12) photoresist that step 10) stayed is removed, and has relatedly removed the gold above the photoresist, begins to take shape CPW(5), metal fin (10), output press welding block (11) and connecting line (13);
13) anti-carve tantalum nitride, form and CPW(5) the terminal build-out resistor (6) that is connected of output terminal, its square resistance be 25 Ω/
;
14) by evaporation mode, grow for the down payment of electroplating: evaporation titanium/gold/titanium three-layer metal, as down payment, its thickness is 500/1500/300;
15) apply photoresist, remove preparation and make CPW(5), metal fin (10), output press welding block (11) and the local photoresist of connecting line (13);
16) electroplate layer of gold, its thickness is 2 μ m;
17) remove the photoresist stayed in step 15);
18) anti-carve titanium/gold/titanium three-layer metal, the corrosion down payment, form CPW(5), metal fin (10), output press welding block (11) and connecting line (13);
19) by this gallium arsenide substrate (14) thinning back side to 100 μ m;
20), at the backside coating photoresist of gallium arsenide substrate (14), remove preparation and form the local photoresist of MEMS substrate film structure (12) at gallium arsenide substrate (14) back side;
21) gallium arsenide substrate (14) of the hot junction of etching attenuate terminal build-out resistor (6) and thermoelectric pile below, form MEMS substrate film structure (12), and the gallium arsenide substrate thickness of etching 80 μ m retains the MEMS substrate film structure (12) of 20 μ m.
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| CN102411087B true CN102411087B (en) | 2013-09-25 |
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| CN111239479B (en) * | 2020-01-19 | 2022-02-22 | 中国计量科学研究院 | Integrated self-calibration radiation power sensing chip and radiation power measuring method |
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| CN101034121A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Wireless receiving microelectronic mechanical microwave power sensor and manufacturing method therefor |
| CN101915870A (en) * | 2010-07-12 | 2010-12-15 | 东南大学 | MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof |
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| CN101034121A (en) * | 2007-03-30 | 2007-09-12 | 东南大学 | Wireless receiving microelectronic mechanical microwave power sensor and manufacturing method therefor |
| CN101915870A (en) * | 2010-07-12 | 2010-12-15 | 东南大学 | MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof |
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