CN102411087A - 90-degree angle four-input micro electromechanical microwave power sensor and preparation method thereof - Google Patents
90-degree angle four-input micro electromechanical microwave power sensor and preparation method thereof Download PDFInfo
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- CN102411087A CN102411087A CN2011102294491A CN201110229449A CN102411087A CN 102411087 A CN102411087 A CN 102411087A CN 2011102294491 A CN2011102294491 A CN 2011102294491A CN 201110229449 A CN201110229449 A CN 201110229449A CN 102411087 A CN102411087 A CN 102411087A
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Abstract
The invention discloses a 90-degree angle four-input micro electromechanical microwave power sensor, which is provided with four coplanar waveguide (CPW) input ends for transmitting microwave signals, wherein the CPW input ends are mutually symmetrically placed and form angles of 90 degrees with one another, two terminal matching resistors are connected to each CPW output end, a thermocouple is arranged nearby each terminal matching resistor, the four pairs of thermocouples are also symmetrically placed and connected in series to form a thermopile, and the four pairs of thermocouples also form angles of 90 degrees with one another, so that measurement of four-input microwave power is realized. The four-input micro electromechanical microwave power sensor reduces the area of a chip, improves the integration degree, and also has the advantages of the conventional thermoelectric microwave power sensor such as low loss, high sensitivity, good linearity and the like.
Description
Technical field
The present invention proposes and be 90o angle four input microelectron-mechanical microwave power detector and preparation methods, belong to the technical field of microelectromechanical systems (MEMS).
Background technology
In research of microwave technology, microwave power is an important parameter that characterizes the microwave signal characteristic, and the measurement of microwave power has important status in wireless application and measuring technique.At present; Microwave power detector based on diode is one of the device of measuring power that is widely used; Non-linear and the rectification characteristic that it utilizes diode current-voltage curve converts microwave signal into low frequency signal, and the microwave power of this low frequency signal and input is proportional in the square law district.It has advantages such as dynamic range and speed is fast, yet measuring accuracy is low and need extra shortcomings such as attenuator when measuring high power.Along with the fast development of MEMS technology, and, make based on the MEMS technology and realize that the 90o angle four input microwave power detectors that are of microwave power measurement become possibility the technological further investigation of MEMS.The present invention is based on the microwave power detector of this principle of work.
Summary of the invention
Technical matters:The present invention provides a kind of 90o angle four that is based on the MEMS technology to import microwave power detector and preparation methods; Place four co-planar waveguides (CPW) through symmetry; They are the angle of 90o each other; Output terminal at each co-planar waveguide connects two terminal build-out resistors, and a thermopair is arranged near each terminal build-out resistor, also becomes symmetry to place parallel-series these four pairs of thermopairs and is connected to form thermoelectric pile; These four pairs of thermopairs are the angle of 90o each other too, thereby realize the measurement of four input microwave powers; It has reduced chip area greatly, has improved integrated level.
Technical scheme:The 90o of being of the present invention angle four input microelectron-mechanical microwave power detectors are substrate with gallium arsenide (GaAs); On substrate, be provided with four CPW, eight terminal build-out resistors, one and constitute thermoelectric pile that four pairs of thermoelectricity form occasionally, two output press welding blocks, metal fin and connecting line by eight thermopairs, MEMS substrate film structure of formation under substrate:
CPW is used to realize the transmission of microwave signal, adopts gold copper-base alloy.Each CPW is made up of the signal wire of a CPW and the ground wire of two CPW.
The terminal build-out resistor adopts tantalum-nitride material to process, and absorbs the microwave power by the transmission of CPW input end fully, and converts heat into.
Thermoelectric pile constitutes four pairs of thermoelectricity by eight thermopairs to be formed occasionally, and said thermopair comprises semiconductor thermocouple arm and metal thermocouple arm, adopts gold and lightly doped GaAs material to constitute.Each thermopair is near a terminal build-out resistor, but is not connected with this terminal build-out resistor; Thermoelectric pile absorbs this heat near an end of terminal resistance; And cause the rising of this end temperature, be the hot junction of thermoelectric pile, yet the temperature of the other end of thermoelectric pile is used as environment temperature; Be the cold junction of thermoelectric pile; Because the difference of the cold two ends of thermoelectric pile heat temperature according to the Seebeck effect, produces the output of thermoelectrical potential on the output press welding block of thermoelectric pile.
Realize being connected through connecting line between the thermopair and between thermoelectric pile and the output press welding block.
Metal fin adopts gold copper-base alloy to process, by the cold junction of thermoelectric pile around, the cold junction temperature that is used for the maintaining heat pile is an environment temperature, thereby improves the temperature difference at the cold two ends of thermoelectric pile heat.
In order to improve heat by the efficient of terminal resistance to the transmission of the hot junction of thermoelectric pile; And then the temperature difference at raising thermoelectric pile two ends; To improve the sensitivity of microwave power detector; Can form the substrate film structure with the gallium arsenide substrate below the hot junction of terminal resistance and thermoelectric pile through MEMS back-etching technology etching attenuate.
On physical construction, CPW, terminal build-out resistor, thermoelectric pile, output press welding block, metal fin and connecting line are produced on the same GaAs substrate.
The 90o angle four input microelectron-mechanical microwave power detectors that are of the present invention are placed four CPW through symmetry; They are the angle of 90o each other; Output terminal at each CPW connects two terminal build-out resistors, and a thermopair is arranged near each terminal build-out resistor, also becomes symmetry to place parallel-series these four pairs of thermopairs and is connected to form thermoelectric pile; These four pairs of thermopairs are the angle of 90o each other too, thereby realize the measurement of four input microwave powers.When one, two, three or four microwave signals to be measured are introduced through one, two, three or four CPW input ends respectively; Terminal build-out resistor in its CPW output terminal parallel connection absorbs these microwave powers respectively and produces heat; Terminal resistance temperature is on every side raise; Be placed near the thermopair of this terminal resistance and measure its temperature difference respectively; Based on the Seebeck effect, on the output press welding block of thermoelectric pile, produce the output of thermoelectrical potential, thereby realize the measurement of single input, dual input, three inputs or four input microwave powers.
The preparation method who is 90o angle four input microelectron-mechanical microwave power detectors is:
1) preparing substrate: the semi-insulating GaAs substrate of selecting extension for use is as substrate, wherein extension N
+The doping content of gallium arsenide is for being 10
18Cm
-3, its square resistance be 100～130 Ω/
2) at the N of extension
+Gallium arsenide substrate applies photoresist, keeps preparation and makes ohmic contact regions and the photoresist that begins to take shape the semiconductor thermocouple arm of thermoelectric pile, removes the N of the local extension of photoresist then
+Gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm that begins to take shape, being completed into its doping content is 10
17Cm
-3The semiconductor thermocouple arm of thermoelectric pile;
4) on the substrate that step 3) obtains, apply photoresist, remove the photoresist that the metal thermocouple arm place of thermoelectric pile is made in preparation;
5) sputter gold germanium nickel/gold on substrate, its thickness are 2700 altogether;
6) peel off the photoresist that stays in the removal step 4), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm of formation thermoelectric pile removed;
7) on the substrate that step 6) obtains, apply photoresist, remove the photoresist at preparation manufacture terminal build-out resistor place;
8) sputter tantalum nitride on substrate, its thickness is 1
μM;
9) photoresist lift off that stays in the step 7) is removed, the tantalum nitride above the related removal photoresist begins to take shape the terminal build-out resistor that is made up of tantalum nitride;
10) on gallium arsenide substrate, apply photoresist, remove preparation and make the local photoresist of CPW, metal fin, output press welding block and connecting line;
11) golden through evaporation mode growth one deck on substrate, its thickness is 0.3
μM;
12) photoresist that step 10) is stayed is removed, and has relatedly removed the gold above the photoresist, begins to take shape CPW, metal fin, output press welding block and connecting line;
13) anti-carve tantalum nitride, form the terminal build-out resistor be connected with the CPW output terminal, its square resistance be 25 Ω/
14) down payment that is used to electroplate through the evaporation mode growth: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
15) apply photoresist, remove preparation and make CPW, metal fin, output press welding block and the local photoresist of connecting line;
16) electroplate one deck gold, its thickness is 2
μM;
17) remove the photoresist that stays in the step 15);
18) anti-carve titanium/gold/titanium, the corrosion down payment forms CPW, metal fin, output press welding block and connecting line;
19) with this gallium arsenide substrate thinning back side to 100
μM;
20) apply photoresist at the back side of gallium arsenide substrate, remove preparation and form the local photoresist of membrane structure at the gallium arsenide back side;
21) gallium arsenide substrate of below, the hot junction of etching attenuate terminal build-out resistor and thermoelectric pile forms membrane structure, etching 80
μThe substrate thickness of m keeps 20
μThe membrane structure of m.
Beneficial effect:The 90o of being of the present invention angle four input microelectron-mechanical microwave power detectors not only have traditional thermoelectricity such as the linearity that low-loss, high sensitivity become reconciled advantage of wave power sensor that declines, and have the measurement that realizes four input microwave powers, high integrated level and the advantage compatible with GaAs single-chip microwave integration circuit.
Description of drawings
Fig. 1 is the synoptic diagram that is 90o angle four input microelectron-mechanical microwave power detectors;
Fig. 2 is the A-A sectional view that is 90o angle four input microelectron-mechanical microwave power detectors;
Fig. 3 is the B-B sectional view that is 90o angle four input microelectron-mechanical microwave power detectors;
Comprise among the figure: four microwave signal input ends 1,2,3 and 4, CPW 5, terminal build-out resistor 6, the thermoelectric pile that is made up of eight thermopairs 7; Semiconductor thermocouple arm 8, metal thermocouple arm 9, metal fin 10, output press welding block 11; The membrane structure 12 of MEMS substrate, connecting line 13, gallium arsenide substrate 14.
Embodiment
The specific embodiments that is 90o angle four input microelectron-mechanical microwave power detectors of the present invention is following:
On gallium arsenide substrate 14, be provided with four CPW 5, eight terminal build-out resistors 6, thermoelectric pile that constitutes four pairs of thermopairs 7 by eight thermopairs 7 and form, two output press welding blocks 11, a metal fin 10 and a connecting line 13, form a MEMS substrate film structure 12 14 times at substrate:
Terminal build-out resistor 6 adopts tantalum-nitride material to process, and absorbs the microwave power by CPW 5 input ends 1,2,3 and 4 transmission fully, and converts heat into.
Thermoelectric pile constitutes four pairs of thermopairs 7 by eight thermopairs 7 and forms, and said thermopair 7 comprises semiconductor thermocouple arm 8 and metal thermocouple arm 9, adopts gold and lightly doped GaAs material to constitute.Each thermopair 7 is near a terminal build-out resistor 6, but is not connected with this terminal resistance 6; Thermoelectric pile absorbs this heat near an end of terminal resistance 6; And cause the rising of this end temperature, be the hot junction of thermoelectric pile, yet the temperature of the other end of thermoelectric pile is used as environment temperature; Be the cold junction of thermoelectric pile; Because the difference of the cold two ends of thermoelectric pile heat temperature according to the Seebeck effect, produces the output of thermoelectrical potential on the output press welding block 11 of thermoelectric pile.
Realize being connected through connecting line 13 between the thermopair 7 and between thermoelectric pile and the output press welding block 11.
In order to improve heat by the efficient of terminal resistance 6 to the transmission of the hot junction of thermoelectric pile; And then the temperature difference at raising thermoelectric pile two ends; To improve the sensitivity of microwave power detector; Can form substrate film structure 12 with the gallium arsenide substrate 14 below the hot junction of terminal resistance 6 and thermoelectric pile through MEMS back-etching technology etching attenuate.
On physical construction, CPW 5, terminal build-out resistor 6, thermoelectric pile, output press welding block 11, metal fin 10 and connecting line 13 are produced on the same GaAs substrate 14.
The 90o angle four input microelectron-mechanical microwave power detectors that are of the present invention are placed four CPW 5 through symmetry; They are the angle of 90o each other; Output terminal at each CPW 5 connects two terminal build-out resistors 6, and a thermopair 7 is arranged near each terminal build-out resistor 6, also becomes symmetry to place parallel-series these four pairs of thermopairs 7 and is connected to form thermoelectric pile; These four pairs of thermopairs 7 are the angle of 90o each other too, thereby realize the measurement of four input microwave powers.When one, two, three or four microwave signals to be measured are introduced through one, two, three or four CPW input ends 1,2,3 and 4 respectively; Terminal build-out resistor 6 in its CPW 5 output terminals parallel connection absorbs these microwave powers respectively and produces heat; Terminal resistance 6 temperature is on every side raise; Be placed near these terminal resistance 6 thermopairs 7 and measure its temperature difference respectively; Based on the Seebeck effect, on the output press welding block 11 of thermoelectric pile, produce the output of thermoelectrical potential, thereby realize the measurement of single input, dual input, three inputs or four input microwave powers.
The preparation method who is 90o angle four input microelectron-mechanical microwave power detectors is:
1) preparing substrate 14: the semi-insulating GaAs substrate 14 of selecting extension for use is as substrate, wherein extension N
+The doping content of gallium arsenide is for being 10
18Cm
-3, its square resistance be 100～130 Ω/
2) at the N of extension
+ Gallium arsenide substrate 14 applies photoresist, keeps preparation and makes ohmic contact regions and the photoresist that begins to take shape the semiconductor thermocouple arm 8 of thermoelectric pile, removes the N of the local extension of photoresist then
+Gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm 8 that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm 8 that begins to take shape, being completed into its doping content is 10
17Cm
-3The semiconductor thermocouple arm 8 of thermoelectric pile;
4) on the substrate 14 that step 3) obtains, apply photoresist, remove the photoresist that metal thermocouple arm 9 places of thermoelectric pile are made in preparation;
5) sputter gold germanium nickel/gold on substrate 14, its thickness are 2700 altogether;
6) peel off the photoresist that stays in the removal step 4), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm 9 of formation thermoelectric pile removed;
7) on the substrate 14 that step 6) obtains, apply photoresist, remove the photoresist at preparation manufacture terminal build-out resistor 6 places;
8) sputter tantalum nitride on substrate 14, its thickness is 1
μM;
9) photoresist lift off that stays in the step 7) is removed, the tantalum nitride above the related removal photoresist begins to take shape the terminal build-out resistor 6 that is made up of tantalum nitride;
10) on gallium arsenide substrate 14, apply photoresist, remove the photoresist that CPW 5, metal fin 10, output press welding block 11 and connecting line 13 places are made in preparation;
11) golden through evaporation mode growth one deck on substrate 14, its thickness is 0.3
μM;
12) photoresist that step 10) is stayed is removed, and has relatedly removed the gold above the photoresist, begins to take shape CPW 5, metal fin 10, output press welding block 11 and connecting line 13;
13) anti-carve tantalum nitride, form the terminal build-out resistor 6 be connected with CPW 5 output terminals, its square resistance be 25 Ω/
14) down payment that is used to electroplate through the evaporation mode growth: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
15) coating photoresist is removed preparation and is made CPW 5, the photoresist in metal fin 10, output press welding block 11 and connecting line 13 places;
16) electroplate one deck gold, its thickness is 2
μM;
17) remove the photoresist that stays in the step 15);
18) anti-carve titanium/gold/titanium, the corrosion down payment forms CPW 5, metal fin 10, output press welding block 11 and connecting line 13;
19) with these gallium arsenide substrate 14 thinning back sides to 100
μM;
20) apply photoresist at the back side of gallium arsenide substrate 14, remove preparation forms membrane structure 12 places at gallium arsenide 14 back sides photoresist;
21) gallium arsenide substrate 14 of the below, hot junction of etching attenuate terminal build-out resistor 6 and thermoelectric pile forms membrane structure 12, etching 80
μThe substrate thickness of m keeps 20
μ The membrane structure 12 of m.
Distinguish whether to be the standard of this structure following:
The 90o angle four input microelectron-mechanical microwave power detectors that are of the present invention; Place four CPW 5 through symmetry, they are the angle of 90o each other, in two terminal build-out resistors 6 of output terminal connection of each CPW; A thermopair 7 is arranged near each terminal build-out resistor 6; Also become symmetry to place parallel-series these four pairs of thermopairs 7 and be connected to form thermoelectric pile, these four pairs of thermopairs 7 are the angle of 90o each other too, thereby realize the measurement of four input microwave powers; The structure that satisfies above condition promptly is regarded as the 90o of being of the present invention angle four input microelectron-mechanical microwave power detectors.
Claims (4)
1. one kind is 90o angle four input microelectron-mechanical microwave power detectors; It is characterized in that: this structure fabrication is on gallium arsenide substrate (14); Four CPW (5) are arranged on gallium arsenide substrate (14); The angle that they are mutually symmetrical and place and be 90o each other; Connect two terminal build-out resistors (6) at each CPW (5) output terminal, a thermopair (7) is arranged near each terminal build-out resistor, these eight thermopairs (7), four pairs of thermopairs of formation (7) also are symmetry placement parallel-series and are connected to form thermoelectric pile; Two output press welding blocks (11) are arranged at the two ends of this thermoelectric pile, the hot junction of thermoelectric pile near terminal build-out resistor (6) and the cold junction of thermoelectric pile near metal fin (10); At gallium arsenide substrate (14) back side MEMS substrate film structure (12) is arranged, it is positioned at the below, hot junction of terminal build-out resistor (6) and thermoelectric pile.
2. the 90o angle four input microelectron-mechanical microwave power detectors that are according to claim 1; It is characterized in that: said input port (1,2, the 3 and 4) number that is used for the Transmission Microwave signal is four, and the angle that is mutually symmetrical and places and be 90o each other.
3. the 90o angle four input microelectron-mechanical microwave power detectors that are according to claim 1, it is characterized in that: the mode that each CPW output connects two terminal build-out resistors (6) is for being connected in parallel; Near terminal resistance (6), the four pairs of thermopairs (7) that are made up of eight thermopairs (7) are the symmetry placement equally, and are the angle of 90o each other; Realize being connected through connecting line (13) between the thermopair (7) and between thermoelectric pile and the output press welding block (11).
4. preparation method who is 90o angle four input microelectron-mechanical microwave power detectors as claimed in claim 1 is characterized in that the preparation method is:
1) preparing substrate (14): the semi-insulating GaAs substrate (14) of selecting extension for use is as substrate, wherein extension N
+The doping content of gallium arsenide is for being 10
18Cm
-3, its square resistance be 100～130 Ω/
2) at the N of extension
+Gallium arsenide substrate (14) applies photoresist, keeps preparation and makes ohmic contact regions and the photoresist that begins to take shape the semiconductor thermocouple arm (8) of thermoelectric pile, removes the N of the local extension of photoresist then
+Gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm (8) that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm (8) that begins to take shape, being completed into its doping content is 10
17Cm
-3The semiconductor thermocouple arm (8) of thermoelectric pile;
4) substrate that obtains in step 3) (14) is gone up and is applied photoresist, the photoresist that the metal thermocouple arm (9) of removal preparation making thermoelectric pile is located;
5) go up sputter gold germanium nickel/gold at substrate (14), its thickness is 2700 altogether;
6) peel off the photoresist that stays in the removal step 4), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm (9) of formation thermoelectric pile removed;
7) substrate that obtains in step 6) (14) is gone up and is applied photoresist, removes the photoresist that preparation manufacture terminal build-out resistor (6) is located;
8) go up the sputter tantalum nitride at substrate (14), its thickness is 1
μM;
9) photoresist lift off that stays in the step 7) is removed, the tantalum nitride above the related removal photoresist begins to take shape the terminal build-out resistor (6) that is made up of tantalum nitride;
10) go up the coating photoresist in gallium arsenide substrate (14), remove the photoresist that CPW (5), metal fin (10), output press welding block (11) and connecting line (13) place are made in preparation;
11) go up through evaporation mode growth one deck gold at substrate (14), its thickness is 0.3
μM;
12) photoresist that step 10) is stayed is removed, and has relatedly removed the gold above the photoresist, begins to take shape CPW (5), metal fin (10), output press welding block (11) and connecting line (13);
13) anti-carve tantalum nitride, form the terminal build-out resistor (6) be connected with CPW (5) output terminal, its square resistance be 25 Ω/
14) down payment that is used to electroplate through the evaporation mode growth: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
15) apply photoresist, remove preparation and make CPW (5), metal fin (10), output press welding block (11) and the local photoresist of connecting line (13);
16) electroplate one deck gold, its thickness is 2
μM;
17) remove the photoresist that stays in the step 15);
18) anti-carve titanium/gold/titanium, the corrosion down payment forms CPW (5), metal fin (10), output press welding block (11) and connecting line (13);
19) with this gallium arsenide substrate (14) thinning back side to 100
μM;
20) apply photoresist at the back side of gallium arsenide substrate (14), remove preparation and form the local photoresist of membrane structure (12) at gallium arsenide (14) back side;
21) gallium arsenide substrate (14) of below, the hot junction of etching attenuate terminal build-out resistor (6) and thermoelectric pile forms membrane structure (12), etching 80
μThe substrate thickness of m keeps 20
μThe membrane structure of m (12).
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|---|---|---|---|
| CN 201110229449 CN102411087B (en) | 2011-08-11 | 2011-08-11 | 90-degree angle four-input micro electromechanical microwave power sensor and preparation method thereof |
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| CN102411087A true CN102411087A (en) | 2012-04-11 |
| CN102411087B CN102411087B (en) | 2013-09-25 |
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Cited By (2)
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| CN103176038A (en) * | 2013-01-31 | 2013-06-26 | 东南大学 | Self-powered micro-electromechanical sensor and self-powered module in microwave transceiver |
| CN111239479A (en) * | 2020-01-19 | 2020-06-05 | 中国计量科学研究院 | Integrated self-calibration radiation power sensing chip and radiation power measuring method |
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| CN101915870A (en) * | 2010-07-12 | 2010-12-15 | 东南大学 | MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof |
| US20110023927A1 (en) * | 2005-07-08 | 2011-02-03 | Irvine Sensors Corporation | Micro-combustion power system with metal foam heat exchanger |
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| US20060028165A1 (en) * | 2004-08-03 | 2006-02-09 | Harris Corporation | Fuel flexible thermoelectric generator with battery charger |
| US20110023927A1 (en) * | 2005-07-08 | 2011-02-03 | Irvine Sensors Corporation | Micro-combustion power system with metal foam heat exchanger |
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| CN103176038A (en) * | 2013-01-31 | 2013-06-26 | 东南大学 | Self-powered micro-electromechanical sensor and self-powered module in microwave transceiver |
| CN103176038B (en) * | 2013-01-31 | 2015-07-15 | 东南大学 | Self-powered micro-electromechanical sensor and self-powered module in microwave transceiver |
| CN111239479A (en) * | 2020-01-19 | 2020-06-05 | 中国计量科学研究院 | Integrated self-calibration radiation power sensing chip and radiation power measuring method |
| CN111239479B (en) * | 2020-01-19 | 2022-02-22 | 中国计量科学研究院 | Integrated self-calibration radiation power sensing chip and radiation power measuring method |
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| CN102411087B (en) | 2013-09-25 |
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